水溶性CdSe/CdS量子点的合成及其与牛血清蛋白的共轭作用

用巯基乙酸(TGA)作为稳定剂，合成了水溶性的CdSe和核壳结构的CdSe/CdS半导体量子点。吸收光谱和荧光光谱研究表明，核壳结构的CdSe/CdS半导体量子点比单一的CdSe量子点具有更优异的发光特性。用TEM、电子衍射(ED)和XPS分别表征了CdSe和CdSe/CdS纳米微粒的结构、形貌及分散性。红外光谱和核磁共振谱证实了巯基乙酸分子中的硫原子和氧原子与纳米微粒表面的金属离子发生了配位作用。在pH值为7.4的条件下，将合成的CdSe和CdSe/CdS量子点直接与牛血清白蛋白(BSA)相互作用。实验发现，两种量子点均对BSA的荧光产生较强的静态猝灭作用；而BSA对两种量子点的荧光则具有显著的荧光增敏作用，存在BSA时CdSe/CdS量子点的荧光增强是不存在BSA时体系荧光强度的3倍。     

CdS和CdSe新型纳米结构的高效溶剂热合成

采用快速高效的溶剂热法合成了海星形CdS纳米结构和一维CdSe纳米结构。用XRD、SEM和UV-Vis等表征手段对产物进行了表征，结果表明产物为单一的CdS和CdSe纳米结构，且CdS纳米结构具有良好的分散性，其形成极大地受到pH值影响，而CdSe先形成层状的二维结构、再形成一维纳米结构。     

超声搅拌化学浴沉积法制备大颗粒和致密的CdS薄膜

采用超声搅拌化学浴法(UCBD)在SnO2:F透明导电玻璃衬底上制备了CdS薄膜.研究了退火和CdCl2处理对UCBD-CdS薄膜的表面形貌、晶体结构和直接带隙的影响,比较了沉积时间对UCBD-CdS薄膜中CdS聚集体颗粒大小和堆积致密性的影响.结果表明,CdCl2处理可使CdS聚集体中的小颗粒重新熔合在一起,但CdS聚集体的大小并没有改变.在UCBD-CdS薄膜的沉积过程中,CdS薄膜的横向和纵向生长速率之比会随着沉积时间的不同而改变,且沉积时间是获得大颗粒的CdS聚集体和致密的UCBD-CdS薄膜的重要影响因素.当沉积时间为40min时,获得的UCBD-CdS薄膜较致密,CdS聚集体的大小为180nm,膜厚为80.8nm,适合作为薄膜太阳电池的窗口层.     

退火温度对CdSe纳米薄膜的形成及光电性能影响

在室温下,采用循环伏安法在ITO上沉积CdSe纳米薄膜。利用X射线衍射仪(XRD)、场发射扫描电镜(FESEM)、原子力显微镜(AFM)、X射线光电子能谱分析(XPS)、紫外-可见(UV-VIS)分光光度计以及电化学工作站对不同温度退火后的CdSe纳米薄膜的晶体结构、形貌、光学性能、光电化学性能进行表征和测试。结果表明,退火温度对CdSe纳米薄膜的形貌和性能起到关键性作用。薄膜表面平整、厚度均匀,且由呈纳米颗粒状的立方相CdSe构成;经退火后,CdSe纳米颗粒出现不同程度的长大现象,Se含量随退火温度的升高而减少。紫外-可见吸收光谱表明随着退火温度的升高,CdSe纳米薄膜对可见光的吸收发生红移,表明禁带宽度逐渐减小,表现出量子尺寸效应。通过光电流测试表明随着退火温度的升高,CdSe薄膜的光电响应效应显著提高。     

退火温度对CdSe纳米薄膜的形成及光电性能影响

在室温下,采用循环伏安法在ITO上沉积CdSe纳米薄膜。利用X射线衍射仪(XRD)、场发射扫描电镜(FESEM)、原子力显微镜(AFM)、X射线光电子能谱分析(XPS)、紫外-可见(UV-VIS)分光光度计以及电化学工作站对不同温度退火后的CdSe纳米薄膜的晶体结构、形貌、光学性能、光电化学性能进行表征和测试。结果表明,退火温度对CdSe纳米薄膜的形貌和性能起到关键性作用。薄膜表面平整、厚度均匀,且由呈纳米颗粒状的立方相CdSe构成;经退火后,CdSe纳米颗粒出现不同程度的长大现象,Se含量随退火温度的升高而减少。紫外-可见吸收光谱表明随着退火温度的升高,CdSe纳米薄膜对可见光的吸收发生红移,表明禁带宽度逐渐减小,表现出量子尺寸效应。通过光电流测试表明随着退火温度的升高,CdSe薄膜的光电响应效应显著提高。     

水溶性的CdSe/CdS/ZnS量子点的合成及表征

用L-半胱氨酸盐(Cys)作为稳定剂,合成了水溶性的双壳结构的CdSe/CdS/ZnS半导体量子点。吸收光谱和荧光光谱结果表明,双壳结构的CdSe/CdS/ZnS纳米微粒比单一的CdSe核纳米粒子和单核壳结构的CdSe/CdS纳米粒子具有更优异的发光特性。用透射电子显微镜(TEM)、ED、XRD、XPS和FTIR等方法对CdSe核和双壳层的CdSe/CdS/ZnS纳米微粒的结构、分散性及形貌分别进行了表征。     

电化学沉积CdSe纳晶薄膜的性能及沉积机理

电化学沉积是半导体薄膜制备的一种简便方法,常用于Ⅱ-族化合物半导体薄膜的制备.通过电沉积条件的适当改变可成功地在导电衬底上制备半导体纳晶薄膜^[1].CdSe薄膜作为一种透光性好、导电性好的半导体材料,可进行光学性能和光电性能方面的研究,而半导体纳晶多孔电极的光电化学特性与体材料之间有很大不同.本文采用电化学沉积法制备了CdSe纳晶薄膜并研究了其性能,通过扫描隧道显微镜(STM)形貌分形分析进一步研究其沉积机理.     

水溶性CdSe/CdS核壳纳米粒子制备的影响因素及其对CdSe/CdS光谱特性的影响

以半胱氨酸镉配合物为前体, 在水溶液中合成CdSe纳米粒子, 以CdS对其表面进行修饰, 得到具有核壳结构的CdSe/CdS 纳米粒子. 采用XRD, TEM表征其结构及形貌; 以荧光光谱研究了时间、pH值、壳量、壳前体加入方式、稳定剂用量等因素对CdSe/CdS光谱特性的影响.     

退火温度对TiO_2/CdSe纳米片异质结薄膜光电性能的影响

采用水热法在FTO上制备(001)高活性晶面主导的TiO_2纳米片薄膜,利用循环伏安法在TiO_2纳米片薄膜上沉积CdSe颗粒,制备了TiO_2/CdSe纳米片异质结薄膜。分别在150、250、350、450℃,氩气保护气氛中对样品进行退火。利用X射线衍射仪(XRD)、场发射扫描电镜(FESEM)、X射线光电子能谱分析仪(XPS)、紫外-可见(UV-Vis)分光光度计以及电化学工作站对不同温度退火后的TiO_2/CdSe纳米片异质结薄膜的微观形貌、晶体结构、光电化学性能进行表征和测试。结果表明:六方相CdSe纳米颗粒均匀包覆在TiO_2纳米片表面,直径30 nm左右;随着退火温度的升高CdSe纳米颗粒长大,形成光滑的CdSe薄膜,且晶化程度提高;TiO_2纳米片表面的Se元素与Cd元素发生氧化;TiO_2/CdSe纳米片异质结薄膜对可见光的吸收光谱发生红移,禁带宽度逐渐减小。光电化学性能测试表明随着退火温度的升高,TiO_2/CdSe纳米片异质结薄膜的光电流密度显著提高,开路电压减小,但由于SeO_2和CdO的出现,导致填充因子减小,影响光电转换效率的提高。在本实验条件下,TiO_2/CdSe纳米片异质结薄膜的最佳退火温度为150℃,填充因子为0.77,光电转换效率达到3.12%。     

壳聚糖-CdS复合膜制备及其对吡啶的传感特性

利用壳聚糖（CS）易于成膜的特点，模拟生物矿化，在有机物调制下通过异相成核生长制备了CS/CdS纳米颗粒复合膜.研究了成膜条件对膜的水热稳定性和发光性能的影响，以及CS/CdS纳米颗粒复合膜对水体中吡啶的响应特性.扫描电镜分析表明CS/CdS纳米颗粒复合膜均匀性好， CdS以物理掺杂方式均匀分布于CS薄膜中， CdS颗粒尺寸在70 nm左右.但薄膜荧光光谱位置和形状表明实际发光的CdS簇集体直径小于20 nm.由此推测电镜观察到的CdS颗粒可能是由许多CdS小颗粒聚集而成，小颗粒之间因有机物的存在而相互隔离. CS/CdS纳米颗粒复合膜的荧光发射对水体中吡啶的存在十分敏感，微量吡啶的存在会引起薄膜荧光发射急剧增强.除铜和碘离子外，水体系中其他常见离子对薄膜荧光发射没有显著影响，预期CS/CdS纳米颗粒复合薄膜有可能发展成为一种重要的水体系吡啶测定专用传感薄膜材料.     

CdS敏化对TiO2纳米薄膜电极光生电荷转移特性的影响

1991年Gratzel等[1]以敏化的TiO2纳米薄膜电极组成的液体结光电化学太阳能电池(PEC),其光电转换效率(IPCE)达到10%. 最近,选用固态电解质使这种PEC的IPCE达到33%[2].于是用有机染料[3,4]及窄带隙半导体纳米微粒[5]敏化的电极受到了广泛关注.     

Self-organized polymer nanocomposite inverse opal films with combined optical properties

Inverse opal films with unique optical properties have potential as photonic crystal materials and have stimulated wide interest in recent years. Herein, iridescent hybrid polystyrene/nanoparticle macroporous films have been prepared by using the breath‐figure method. The honeycomb‐patterned thin films were prepared by casting gold nanoparticle‐doped polystyrene solutions in chloroform at high relative humidity. Highly ordered hexagonal arrays of monodisperse pores with an average diameter of 880 nm are obtained. To account for the observed features, a microscopic phase separation of gold nanoparticles is proposed to occur in the breath‐figure formation. That is, individual gold nanoparticles adsorb at the solution/water interface and effectively stabilize condensed water droplets on the solution surface in a hexagonal array. Alternatively, at high nanoparticle concentrations the combination of breath‐figure formation and nanoparticle phase separation leads to hierarchical structures with spherical aggregates under a honeycomb monolayer. The films show large features in both the visible and NIR regions that are attributed to a combination of nanoparticle and ordered‐array absorptions. Organic ligand‐stabilized CdSe/CdS quantum dots or Fe₃O₄ nanoparticles may be loaded into the honeycomb structure to further modify the films. These results demonstrate new methods for the fabrication and functionalization of inverse opal films with potential applications in photonic and microelectronic materials.     

SILAR Deposition of CdS Thin Films on Glass Substrates Modified with 3‐Mercaptopropyltrimethoxysilane

Glass substrates modified with 3‐mercaptopropyltrimethoxysilane (MPS) were used to deposit CdS thin films in the process of successive ionic layer adsorption and reaction (SILAR). The films were characterized by X‐ray diffraction, optical absorption, and atomic force microscopy (AFM). AFM showed that the modified substrates were in favor of the growth of the films by comparison with the unmodified ones. The depositing rate of the films was faster on modified substrates than on unmodified ones.     

水浴法制备CdS薄膜产生的本征缺陷对光电学性质的影响

采用化学水浴沉积法(CBD)在钠钙玻璃衬底上制备硫化镉(CdS)薄膜,研究不同硫酸镉(CdSO_4)浓度下产生的本征缺陷对CdS薄膜光电学性质的影响。采用光致发光光谱、紫外-可见分光光度计及霍尔效应测试系统对薄膜的本征缺陷、光学及电学性质进行分析,发现CdS薄膜主要存在镉间隙(Cdi)及硫空位(VS)等本征缺陷,且VS随CdSO_4浓度的降低而逐渐减少。同时,VS缺陷的减少有利于薄膜透过率的提高,但在一定程度上降低了薄膜的电导率。根据透过率及其相关公式可知,半导体材料中透过率与电导率成e指数反比关系,适当减小薄膜的电导率可以使其透过率得到大幅度的提高,理论解释与实验结果相一致。     

Pulsed Laser Deposition ZnS Buffer Layers for CIGS Solar Cells

Polycrystalline ZnS films were prepared by pulsed laser deposition （PLD） on quartz glass substrates under different growth conditions at different substrate temperatures of 20, 200, 400, and 600 ℃, which is a suitable alternative to chemical bath deposited （CBD） CdS as a buffer layer in Cu（In,Ga）Se2 （CIGS） solar cells. X-ray diffraction studies indicate the films are polycrystalline with zinc-blende structure and they exhibit preferential orientation along the cubic phase β-ZnS （111） direction, which conflicts with the conclusion of wurtzite structure by Murali that the ZnS films deposited by pulse plating technique was polycrystalline with wurtzite structure. The Raman spectra of grown films show Al mode at approximately 350 cm^-1, generally observed in the cubic phase β-ZnS compounds. The planar and the cross-sectional morphology were observed by scanning electron microscopic. The dense, smooth, uniform grains are formed on the quartz glass substrates through PLD technique. The grain size of ZnS deposited by PLD is much smaller than that of CdS by conventional CBD method, which is analyzed as the main reason of detrimental cell performance. The composition of the ZnS films was also measured by X-ray fluorescence. The typical ZnS films obtained in this work are near stoichiometric and only a small amount of S-rich. The energy band gaps at different temperatures were obtained by absorption spectroscopy measurement, which increases from 3.2 eV to 3.7 eV with the increasing of the deposition temperature. ZnS has a wider energy band gap than CdS （2.4 eV）, which can enhance the blue response of the photovoltaic cells. These results show the high-quality of these substitute buffer layer materials are prepared through an all-dry technology, which can be used in the manufacture of CIGS thin film solar cells.     

ITO/TiO2表面电沉积CdS纳米粒子及其薄膜的光电性能

采用阴极恒电位沉积方法, 在TiO2表面沉积制备出CdS纳米粒子. XRD和SEM测试结果表明, CdS粒子的结构以六方晶相为主, 粒径分布均匀, 表面形貌呈菜花状. 通过调节沉积电位和沉积时间等因素在一定程度上可以控制CdS纳米粒子的生长. 随着沉积电位变负, CdS粒子的粒径逐渐减小. 沉积时间越短, 粒子粒径越小. 紫外-可见吸收光谱测试结果表明, 不同条件下制备出来的CdS粒子表现出一定的量子尺寸效应. 此外, 沉积条件也会影响ITO/TiO2/CdS复合半导体薄膜的光电性能.     

Growth and spectroscopic characterization of CdSe nanoparticles synthesized from CdCl2 and Na2SeSO3 in aqueous gelatine solutions

CdSe nanoparticles were synthesized in comparatively mild conditions from Na₂SeSO₃ and CdCl₂ in aqueous gelatine solutions. Kinetics of the formation and growth of CdSe nanocrystals as well as the effect of various parameters of reacting mixture on the size of CdSe nanocrystals are investigated. Optical properties of thin gelatine films, containing CdSe nanoparticles of different size, are characterized using absorption and Raman spectroscopy.