含Ni-Nb阻挡层的硅基Pb(Zr0.4,Ti0.6)O3电容器的制备及铁电性能研究

采用Ni-Nb薄膜作为导电阻挡层,以La0.5Sr0.5CoO3(LSCO)为底电极,构建了LSCO/Pb(Zr0.4,Ti0.6)O3(PZT)/LSCO异质结电容器。使用X射线衍射仪和铁电测试仪对其进行结构表征和性能测试。实验发现:Ni-Nb薄膜为非晶结构,PZT薄膜结晶状况良好。LSCO/PZT/LSCO电容器在5 V外加电压测试下,电滞回线具有良好的饱和趋势,剩余极化强度Pr为35.5μC/cm2,矫顽电压Vc为1.42 V,电容器具有良好的抗疲劳特性和保持特性。     

含NiTi阻挡层的硅基(La0.5Sr0.5)CoO3/Pb(Zr0.4Ti0.6)O3/(La0.5Sr0.5)CoO3铁电电容器异质结

应用磁控溅射法制备的非晶NiTi薄膜作阻挡层,在Si (100)衬底上构造了(La0.5Sr0.5)CoO3/ Pb(Zr0.4Ti0.6)O3/(La0.5Sr0.5)CoO3(LSCO/PZT/LSCO)铁电电容器异质结,研究了Pb(Zr0.4Ti0.6)O3铁电薄膜的结构和物理性能.实验发现LSCO/PZT/LSCO铁电电容器具有良好的电学性能,在417kV/cm的驱动场强下,PZT铁电电容器具有较低的矫顽场强(125kV/cm)和较高的剩余极化强度(19.0μC/cm2),良好电容-电压特性(C-V)和保持特性,铁电电容器经过1010次反转后,极化强度没有明显下降,表明了非晶NiTi薄膜可以用作高密度硅基铁电存储器的扩散阻挡层.     

La0.5Sr0.5CoO3/Pb(Zr0.4Ti0.6)O3/La0.5Sr0.5CoO3铁电电容器的结构和性能研究

采用磁控溅射法和脉冲激光沉积法,在SrTiO3(001)衬底上制备了La0.5Sr0.5CoO3(70 nm)/Pb(Zr0.4Ti0.6)O3(70 nm)/La0.5Sr0.5CoO3(70 nm) (LSCO/PZT/LSCO)铁电电容器异质结.X射线衍射结果表明:LSCO和PZT薄膜均为外延结构.在5 V的外加电压下, LSCO/PZT/LSCO电容器具有较低的矫顽电压(0.49 V),较高的剩余极化强度(41.7 μC/cm2 )和较低的漏电流密度(1.97×10-5 A/cm2),LSCO/PZT/LSCO电容器的最大介电常数为1073.漏电流的分析表明:当外加电压小于0.6 V时,电容器满足欧姆导电机制;当外加电压大于0.6 V时,符合空间电荷限制电流(SCLC)导电机制.     

Fe2O3掺杂(Ba0.7Ca0.3)TiO3-Ba(Zr0.2Ti0.8)O3无铅压电陶瓷的制备与性能

采用固相合成法制备了Fe2O3掺杂(Ba0.7Ca0.3)TiO3-Ba(Zr0.2Ti0.8)O3(简称BCZT)无铅压电陶瓷。借助XRD、SEM、阻抗分析仪等对该陶瓷的相组成、显微结构以及压电和介电性能进行了研究。结果表明,Fe2O3掺杂降低了BCZT无铅压电陶瓷的烧结温度并使居里温度Tc从85℃提高到95℃;当Fe2O3掺杂为0.02wt%～0.1wt%时,陶瓷样品均为ABO3型钙钛矿结构;少量Fe2O3掺杂促进了陶瓷晶粒的生长,但随着Fe2O3掺杂量进一步增加,陶瓷晶粒随之细化;当Fe2O3掺杂量为0.04wt%时,陶瓷样品具有最优综合电性能,其压电常数d33、机电耦合系数kp、机械品质因数Qm、介电损耗tanδ和介电常数εr分别为400 pC/N,0.40,51,0.023和3482。     

二乙醇胺辅助溶胶-水热法低温合成四方形貌Pb(Zr0.52Ti0.48)O3粉体

以醋酸铅、异丙醇钛、正丙醇锆为主要实验原料,采用改进的溶胶-水热复合法,在较低温度下制备出了四方形貌的Pb(Zr0.52Ti0.48) O3[简称PZT]纳米级粉体.探讨了二乙醇胺和水热反应温度对粉体结晶过程、粉体形貌、颗粒尺寸的影响.实验结果表明,二乙醇胺能够显著降低水热合成温度,有助于粉体在低温条件下合成.随着水热反应温度由150℃逐渐升高至200℃,PZT粉体由非晶态逐渐转变成含有少量杂质的四方相,最后形成了纯的四方相结构.粉体颗粒尺寸逐渐变小.当水热反应温度为180℃时,具有单一四方相结构的Pb(Zr0.52 Ti0.48)O3粉体呈现四方形貌,且团聚不明显.     

退火工艺对含Ti-Al阻挡层的硅基Pb(Zr_(0.4),Ti_(0.6))O_3铁电电容器结构和性能影响的研究

应用非晶的Ti-Al薄膜为导电阻挡层,采用射频磁控溅射法和溶胶-凝胶法在Si衬底上制备了La_(0.5)Sr_(0.5)CoO_3/Pb(Zr_(0.4),Ti_(0.6))O_3/La_(0.5)Sr_(0.5)CoO_3/Ti-Al/Si (LSCO/PZT/LSCO/Ti-Al/Si)异质结,研究了550 ℃常规退火(CTA)和快速退火(RTA)工艺对LSCO/PZT/LSCO/Ti-Al/Si结构和性能的影响.实验发现非晶Ti-Al薄膜在经过不同退火工艺后仍具有非晶结构,快速退火6 min的样品具有较好的物理性能.在418 kV/cm的外加电场下,LSCO/PZT/LSCO电容器的剩余极化强度和矫顽电场强度分别为22 μC/cm~2和83 kV/cm.LSCO/PZT/LSCO电容器的漏电行为不依赖于退火工艺,当电场强度低于46.7 kV/cm时为欧姆导电,高于46.7 kV/cm时为肖特基导电机制.     

(Ba0.85Ca0.15)(Ti1-xZrx)O3无铅压电陶瓷的性能研究

采用固相法制备了(Ba0.85Ca0.15)(Ti1-xZrx)O3(BCTZ)无铅压电陶瓷,研究Zr含量(x=0～0.15)对BCTZ陶瓷微观结构和电性能的影响。结果表明:所有样品均具有纯的钙钛矿结构;随Zr含量的增加,室温下样品逐渐由四方相向三方相转变,在0.05相似文献   

烧结温度和升温速率对Pb(Sb1/3Mn2/3)0.05Zr0.47Ti0.48O3压电陶瓷性能的影响

采用传统固相法制备了Pb(Sb1/3 Mn2/3)0.05Zr0.47Ti0.48 O3 (PMS-PZT)压电陶瓷.利用XRD、SEM和EDS等研究PMS-PZT陶瓷体系在烧结过程中形成的过渡液相和形成过渡液相温度(1100℃)附近的升温速率对陶瓷结构、压电和介电性能的影响.结果表明:不同烧结温度下,所有样品均为单一的钙钛矿四方相,过渡液相不会对相的结构有影响,但是当烧结温度较低时,过渡液相在烧结后期以玻璃相在晶界附近富集,对陶瓷的压电和介电性能有很大影响.随着烧结温度和升温速率的升高,PMS-PZT晶粒尺寸增大,晶粒均匀性和规则性得以改善,晶化质量得到提高;d33测试和阻抗分析测试结果表明PMS-PZT样品在1100℃附近以7 ℃·min-1升温速率并在1250℃烧结时具有最好的压电和介电性能:d33 =313 C/N,kp=0.59,Qm=1481,εr=1437,tanδ=0.53;.     

稀土离子对0.6Ca0.6La0.267TiO3-0.4Ca(Mg1/3Nb2/3)O3陶瓷微观组织结构及微波介电性能的影响

采用固相合成方法制备钙钛矿结构的0.6Ca06La0.267TiO3-0.4Ca(Mg1/3Nb2/3)O3微波介质陶瓷,研究了La3+、Nd3+、Sm3+、Ce4+掺杂对0.6CLT-0.4CMN体系微观组织结构和介电性能的影响.研究结果表明:稀土离子的掺杂,在0.6CLT-0.4CMN体系优良介电性能基础上有积极的改善效果,不同程度稀土离子掺杂对该体系的晶粒尺寸、气孔率等微观组织结构也有不同的影响.La3+、Nd3+、Sm3+、Ce4+6掺杂完全固溶到0.6CLT-0.4CMN陶瓷相中,并没有改变陶瓷主晶相,但会在一定程度上发生晶面衍射峰偏移.适量掺杂Ln3可以有效促进0.6CLT-0.4CMN陶瓷的致密化,提高0.6CLT-0.4CMN体系陶瓷的微波介电性能.La3+、Nd3+、Sm3+、Ce4+掺杂可以有效提高Q ×f值,并在一定程度上降低谐振频率温度系数.其中,掺杂0.75mol; Nd3+的0.6CLT-0.4CMN体系微波介电性能最佳(εr=66.7,Q×f=13037 GHz,rf=22.59 ppm/℃)     

La3+掺杂对Pb(Lu1/2Nb1/2)O3反铁电单晶储能性能的影响

采用顶部籽晶法生长了La3+掺杂Pb(Lu1/2Nb1/2)O3(PLN)反铁电单晶,晶体组分简写为xLa-PLN(x=1;、3;、5;),并详细研究了La3+掺杂对PLN晶体储能性能的影响.通过ICP测试了不同配比晶体的实际掺杂比例,分别为0.3;、1.1;、2.9;.XRD显示该晶体体系为正交相钙钛矿结构,且存在两套超晶格衍射点阵,分别由A位铅离子反平行排列和B位离子有序排列导致.介电温谱给出了晶体的介电常数、介电损耗随温度和频率的变化规律,不存在弥散相变.变温电滞回线显示,该体系均表现出典型的双电滞回线特性,且随着La3+含量的增加,有效储能密度逐渐增大,最高储能密度达到5.1 J/cm3.这主要是由于La3+掺杂导致体系的容忍因子下降,从而增强了反铁电稳定性,最终提高了PLN体系的能量存储密度.     

Structure and thermal stability of (Zr0.6Al0.4)O1.8 thin film on strained SiGe layer

Zr_0.6Al_0.4O_1.8 dielectric films were deposited directly on strained SiGe substrates at room temperature by ultra-high vacuum electron-beam evaporation (UHV-EBE) and then annealed in N₂ under various temperatures. X-ray diffraction (XRD) reveals that the onset crystallization temperature of the Zr_0.6Al_0.4O_1.8 film is about 900 °C, 400 °C higher than that of pure ZrO₂. The amorphous Zr_0.6Al_0.4O_1.8 film with a physical thickness of ∼12 nm and an amorphous interfacial layer (IL) with a physical thickness of ∼3 nm have been observed by high-resolution transmission electron microscopy (HRTEM). In addition, it is demonstrated there is no undesirable amorphous phase separation during annealing at temperatures below and equal to 800 °C in the Zr_0.6Al_0.4O_1.8 film. The chemical composition of the Zr_0.6Al_0.4O_1.8 film has been studied using secondary ion mass spectroscopy (SIMS).     

Specific features of the structure and electrical conductivity of the magnetically ordered oxide (La0.9Sr0.1)(Fe0.8Mg0.2)O3?y

The structure of the (La_0.9Sr_0.1)(Fe_0.8Mg_0.2)O_{3− y} oxide is investigated using neutron diffraction at temperatures of 10, 295, 500, 700, and 1000 K. The results of the structure refinement are in good agreement with the experimental data on the electrical conductivity and confirm the inference that the oxidation state of iron cations is higher than 3+ and that the structure of the compound is antiferromagnetically ordered at temperatures below 500 K. Original Russian Text ? S.A. Ivanov, G.M. Kaleva, A.V. Mosunov, E.D. Politova, S.-G. Eriksson, 2008, published in Kristallografiya, 2008, Vol. 53, No. 1, pp. 69–75.     

Growth of polar axis oriented tetragonal Pb(Zr,Ti)O3 films on CaF2 substrates with transparent (La0.07Sr0.93)SnO3

Epitaxial (La_0.07Sr_0.93)SnO₃ [LSSO] films were deposited on CaF₂ substrates by pulse laser deposition. The (1 0 0)_c orientation of LSSO films was observed only on (1 1 0)CaF₂, whereas (1 1 0)_c orientation was found on (1 1 1)CaF₂ and (1 0 0)CaF₂. (0 0 1) polar axis oriented tetragonal Pb(Zr_0.35Ti_0.65)O₃ films were grown on the fabricated (1 0 0)_cLSSO∥(1 1 0)CaF₂ by pulsed metal organic chemical vapor deposition. The (0 0 1)Pb(Zr_0.35Ti_0.65)O₃∥(1 0 0)cLSSO∥(1 1 0)CaF₂ stack structure exhibited about 70% transparency with an adsorption edge of approximately 330 nm.     

Na0.5Bi0.5TiO3-K0.5Bi0.5TiO3-BaMnO3无铅压电陶瓷的结构与电性能

采用固相法制备了(0.8 -x)Na0.5 Bi0.5TiO3 -0.2K0.5Bi0.5TiO3-xBaMnO3(简称NBT-KBT-BM)无铅压电陶瓷,研究了不同BM含量(x=0,0.25％,0.50％,0.75％,1.00％,1.25％,物质的量分数)样品的物相组成、显微结构及电性能.结果表明:所制备的NBT-KBT-BM陶瓷样品均为单一的钙钛矿结构.与纯NBT-KBT陶瓷相比,掺BM陶瓷的烧结温度降低,相对密度ρr得到提高.随x的增加,材料的压电常数d33、平面机电耦合系数kp与机械品质因子Qm先增大后减小,而介电损耗tanδ以及退极化温度Td一直降低.BM的掺入降低了材料的矫顽场Ec,提高了剩余极化强度Pr,从而增强了铁电性.当x=0.75％时,陶瓷获得最佳性能:d33=167 pC/N,kp=0.269,Qm=133,εr=774,tanδ=2.93％.     

Structural study of (As2S3)0.6(GeS2)0.4 glass

(As₂S₃)_0.6(GeS₂)_0.4 glass in non-irradiated and γ-irradiated states has been studied by using high-energy synchrotron X-ray diffraction, extended X-ray absorption fine structure spectroscopy, and positron annihilation lifetime spectroscopy. The experimental results are explained by the local changes around As and Ge atoms upon irradiation. These changes are suggested to involve chemical bonds distortion, formation of defective bonds with wrong coordination, rotation of structural units and appearance of additional free volume in the glass network.     

Growth and properties of Pb[(Zn1/3Nb2/3)0.91Ti0.09]O3 single crystals directly from melt

Pb[(Zn_1/3Nb_2/3)_0.91Ti_0.09]O₃ (PZNT91/9) single crystals were grown by a modified Bridgman method directly from melt using an allomeric Pb[(Mg_1/3Nb_2/3)_0.69Ti_0.31]O₃ (PMNT69/31) single crystal as a seed. X-ray diffraction (XRD) measurement confirmed that the as-grown PZNT91/9 single crystals are of pure perovskite structure. Electrical properties and thermal stabilization of PZNT91/9 crystals grown directly from melt exhibit different characters from those of PZNT91/9 crystals grown from flux, although segregation and the variation of chemical composition are not seriously confirmed by X-ray fluorescence analysis (XPS). The [0 0 1]-oriented PZNT91/9 crystals cut from the middle part of the as-grown crystal boules exhibit broad dielectric-response peaks at around 105 °C, accompanied by apparent frequency dispersion. The values of piezoelectric constant d₃₃, remnant polarization P_r, and induced strain are about 1800–2200 pC/N, 38.8 μC/cm², and 0.3%, respectively, indicating that the quality of PZNT crystals grown directly from melt can be comparable to those of PZNT91/9 single crystals grown from flux. However, further work deserves attention to improve the dielectric properties of PZNT crystals grown directly from melt. Such unusual characterizations of dielectric properties of PZNT crystals grown directly from melt are considered as correlating with defects, microinhomogeneities, and polar regions.     

Floating zone growth and compositional inhomogeneity study of La0.75Y0.05Sr0.2MnO3 single crystals

Single crystals of La_0.75Y_0.05Sr_0.2 MnO₃ have been grown by the floating zone technique. The yttrium distribution in the radial and axial directions in the crystals was studied for different growth rates. The sample grown at high rate showed inhomogeneity in the yttrium content in the growth direction, while the sample grown at relatively low rate was homogeneous in the growth direction, but demonstrated compositional separation between the Y-poor central part and Y-enriched peripheral part in the perpendicular plane. The compositional separation led to magnetic inhomogeneity.