Dopant profiling in silicon nanowires measured by scanning capacitance microscopy

Silicon nanowires (SiNWs) with axial doping junctions were synthesized via the Au‐catalyzed vapor–liquid–solid growth method with the use of HCl. In this work, dopant profiling from three axially doped SiNWs with p–i, p–n and n–i–p junctions were investigated using both scanning electron microscopy (SEM) and scanning capacitance microscopy (SCM). It turns out that observed doping contrasts in SEM are also affected by the surface roughness and sample charging. In contrast, SCM allows us to delineate with sub‐10 nm resolution the electrical junctions and provides a relative value of the doping concentration in each segment of the NW. SCM clearly evidences the expected doping regions within these SiNWs thanks to the addition of HCl during the growth that strongly prevents shell overgrowth. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Theory of scanning near-field magnetooptical microscopy

An analytical theory of scanning near-field magnetooptical microscopy is developed. The theory is based on the elastic scattering of light by small, resonantly polarizable particles, which are used to scan the plane surface of a nonuniformly magnetized medium. The effective polarizability of the particles is calculated with the effect of dynamic “image forces” taken into account in all orders of perturbation theory with respect to the interaction of the particle with a demagnetized ferromagnet, and the magnetooptical perturbation is calculated to first order in the magnetization. The major contributions to the magnetooptical light scattering for a ferromagnetic structure magnetized perpendicular to the surface are found, including a quasistatic approximation for the near-field particle-magnet interaction. The optical size resolution of a magnetic (dielectric) inhomogeneity is estimated. Zh. Tekh. Fiz. 68, 86–91 (July 1998)     

Channel length effect in a MOSFET structure by scanning capacitance microscopy

Depth dependent carrier density and trapped charges in a metal-oxide-semiconductor field effect transistor (MOSFET) like structure have been studied using scanning capacitance microscopy (SCM). For a MOSFET structure, since minority carrier can be provided by the source and drain diffusions, its response time is shorter than that of metal-oxide-semiconductor (MOS) system. So the high frequency C-V relation is slightly different from that of MOS capacitor and shows the characteristics dependent on the channel length. Bias dependent SCM images which represent the depth dependent carrier density and detrapping time constant of trapped charges in the oxide layer were observed to see the channel effect in a MOSFET structure.     

The physical principles of scanning capacitance spectroscopy

Measurements of two-dimensional dopant profiles by means of conventional scanning capacitance microscopy contain uncertainties concerning the quantification of the charge-carrier distribution due to parameters of the capacitance sensor, the probe and the sample itself. Thus an improved sample preparation is presented which is mainly based on a UV-ozone-oxidation process. Further, it is shown how to handle the actual tip shape by aligning a standard calibration curve to the measurement of a known dopant value of the sample. However, the main topic is the influence of the bias voltage on the measurements. It is shown that measurements at non-zero voltages improve the lateral resolution as well as the dopant resolution. To achieve the required data, scanning capacitance spectroscopy (SCS) is the proper method. It is suggested to modify the SCS method into a high-speed SCS to overcome unreliabilities of the measurements due to hysteresis effects.     

Delineation of a p–n junction using dC/dX imagery produced by shear-mode scanning capacitance microscopy

Using a laterally oscillating all-metallic probe, a scanning capacitance microscope (SCM) has been used to yield an image of the spatial derivative of the local capacitance, dC/dX, where C and X are the local capacitance and the axis of the probe tip locus on the sample surface, respectively. Bias fields, except for the ultra-high-frequency fields used for sensing the capacitance, are not necessary to detect the dC/dX signal, which yields an image delineating clearly the depletion region due to the p–n junction. Simultaneously with the dC/dX image, the new SCM can give images of topography and dC/dV if an alternating field V is applied between the probe and sample. Received: 19 March 2001 / Accepted: 22 March 2001 / Published online: 27 June 2001     

Confocal laser scanning microscopy and scanning electron microscopy of tissue Ti-implant interfaces.

Microscopic inspection of heterogenous three-dimensional (3D) objects such as oral implants, or implants in general, is conventionally performed either on ground sections of methyl-metacrylate-embedded material, at the cellular level by histologic analysis of the peri-implant tissue by light microscopy (LM), or at the supramolecular level by transmission electron microscopy (TEM). Alternatively, the architecture of the tissue/implant interface is visualized by scanning electron microscopy (SEM). The two approaches exclude each other because of the sample preparation.We elaborate conditions for the non-invasive analysis of tissue/implant interfaces by confocal laser scanning microscopy (CLSM) in buffer, hoping to obtain a 3D view of fluorescently labeled tissue constituents at the tissue implant interface and, through subsequent SEM, of the metal surface. The use of water-immersion objectives, originally developed for high LM under physiological conditions is essential.In an exploratory approach, the tissue/Ti-interfaces of two retrieved dental implants were analyzed. One was a step-cylinder used for orthodontic anchoring and the other was an endosseous step-screw implant retrieved after infection-related loosening prior to load. The adhering tissue fragments were fluorescently triple-labeled for actin, fibronectin, and sm-alpha-actin. Optical sections for fluorescent images and for the laser reflection map were registered concomitantly. This approach allowed the labeled structures to be located on the metal surface. Subsequently, the same implants were prepared for SEM of the tissue/implant interface, and upon removal of the adhering structures, of the underlying metal surface. Thus, specific proteins can be identified and their spatial architecture as well as that of the underlying metal surface can be visualized for one and the same implant. The immediate visualization after fluorescence labeling in buffer by means of water immersion objective lenses proved most critical.     

Hollow-tip scanning photoelectron microscopy

A new type of microscopy based on scanning in vacuum by a beam of charged particles transmitted through a hollow probe has been implemented. This approach provides controllable motion of spatially localized ion, electron, molecular (atomic), and soft X-ray beams and investigation of the surface in the shear force mode. In the photoelectron mode, in which electrons are transmitted through a 2-μm quartz capillary, a surface profile of gadolinium irradiated by 400-nm femtosecond laser pulses has been visualized with a subwave spatial resolution. The new method of microscopy opens an opportunity of investigations in the field of nanometer local photodesorption of molecular ions (one of the last ideas of V.S. Letokhov).     

The image potential in scanning transmission electron microscopy and scanning tunneling microscopy

Abstract

We sketch developments in the theory of the self-energy of charged particles moving near condensed matter surfaces. Some applications to experimental results from spectroscopy with electrons localized in microprobe beams and to electrons tunneling across a gap between two metals are considered.     

Contact scanning near-field optical microscopy

A new method of scanning in near-field optical microscopy, which makes it possible to operate in contact with the experimental sample, is proposed and implemented. This method permits the practical utilization of the idea of using the dipole-dipole resonance transfer of excitation energy from the active element of the microscope to the sample for achieving a fundamental improvement in the resolution of near-field optical microscopy. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 4, 245–250 (25 February 1998)     

Nonmechanical grating-generated scanning coherence microscopy

A novel method of coherence microscopy with a grating-generated delay line is demonstrated to produce depth-lateral images without axial or lateral scanning. A new image-reconstruction approach based on random phase modulation of the reference beam is realized. The depth-lateral reflections of test objects are digitally reconstructed with a simple algorithm.     

Sensors for scanning probe microscopy

Scanning probe microscopy is still suffering from reproducible fabrication of the corresponding sensors for mechanical, electrical, optical, thermal and chemical material characterisation with highest lateral and/or time resolution. For batch-fabrication techniques lithographic, dry etching and material problems have to be solved. Using such techniques, several types of cantilevers and tips including piezoresistive detection systems have been demonstrated world-wide for the first time. Only an overview is given here. Received: 2 September 2002 / Accepted: 6 November 2002 / Published online: 5 March 2003 RID="*" ID="*"Corresponding author. Fax: +49-561/804-4136, E-mail: kassing@physik.uni-kassel.de     

Theory of light rectification in scanning tunneling microscopy in the presence of an adsorbed molecule

We consider the problem of the rectified current induced by laser radiation in the STM junction when the tip is placed above a small molecule like CO or NO. This is calculated assuming a simple tight-binding model for the tunneling junction including the adsorbate and using nonequilibrium Green's functions techniques. The coupling between tunneling electrons and the molecule vibrational modes is taken into account by a local electron-phonon interaction term. In a second step we estimate the excitation rate of the molecule vibrations for a given laser power. This value is then used to obtain the relative change in the rectified current when the laser is in resonance with a molecule vibration. For a moderate laser power of 2 kW/cm² a relative change of 1 to 3% is predicted.     

Some aspects of scanning electron microscopy

The main components of the SEM are the signal generation and the signal detection and display systems. A finely focussed electron beam scans the specimen surface. Due to the interaction between electrons and solid, signals such as secondary emission, light, X-radiation and currents are generated. Depending on the selected detection system the displayed images provide a variety of information, such as topography, element distribution, surface voltage, luminescence, conductivity, etc. The useful application of the SEM ranges from surface study to bulk analysis to device fabrication.     

First-principles theory of scanning tunneling microscopy

Scanning tunneling microscopy/spectroscopy (STM/STS), which has been so epoch-making in surface science experiments introduced many challenging problems also to the theory of condensed matter physics. Recent progress in theories of STM/STS contributed to revealing the relation between the atomic structure of the tip and the STM/STS data, and to clarify various strange phenomena observed. The present article reviews various important issues of the fundamentals of STM/STS from theoretical view points.

After surveying the so far presented theoretical approaches, the first-principles simulation method based on the microscopic electronic state of both the sample surface and the tip is introduced. Several examples of the simulation such as graphite and Si surfaces, are described. Some novel phenomena of the microscopic tunnel system of STM such as the negative differential resistance in STS and single electron tunneling through fine supported particles are also discussed, as well as the many-body effect or electron-phonon coupling effect on STM/STS.     

Combined phase-sensitive acoustic microscopy and confocal laser scanning microscopy

Combined phase-sensitive acoustic microscopy (PSAM) at 1.2 GHz and confocal laser scanning microscopy (CLSM) in reflection and fluorescence has been implemented and applied to polymer blend films and fluorescently labeled fibroblasts and neuronal cells in order to explore the prospects and the various contrast mechanisms of this powerful technique. Topographic contrast is available for appropriate samples from CLSM in reflection and, with significantly higher precision, from the acoustic phase images. Material contrast can be gained from acoustic amplitude V(z) graphs. In the case of the biological cells investigated, the optical and acoustic images are very different and exhibit different features of the samples.     

Scanning acoustic Doppler microscopy and scanning acoustic correlation microscopy

Acoustic microscopy with vector contrast at 100 MHz in a fluid with immersed particles is used to detect the flow profile in front of a microscopic orifice. The velocity profile concerning the component in axial direction of the focused beam is derived from the phase contrast. Possibilities to resolve the flow profile also for the components in normal direction with respect to the axis are demonstrated. The methods concerning measurement techniques and data evaluation for scanning acoustic Doppler microscopy are presented. For scanning acoustic correlation microscopy the time dependent phase and amplitude signals resulting from sound waves scattered by the immersed particles (aluminium flakes with a typical diameter of 10 microm) have been analysed by correlation procedures. From the obtained autocorrelation functions the velocity distribution can be derived. Both methods can be applied simultaneously. Data analysis is based on the information contained in the originally obtained images in vector contrast derived from temporal and spatial resolved analogue and digital processing of the acoustic signals.     

Scattering approach to scanning gate microscopy

We present a perturbative approach to the conductance change caused by a weakly invasive scattering potential in a two-dimensional electron gas. The resulting expressions are used to investigate the relationship between the conductance change measured in scanning gate microscopy as a function of the position of a scattering tip and local electronic quantities like the current density. We use a semiclassical approach to treat the case of a strong hard-wall scatterer in a half-plane facing a reflectionless channel. The resulting conductance change is consistent with the numerically calculated quantum conductance.