La0.5Sr0.5CoO3/Pb(Zr0.4Ti0.6)O3/La0.5Sr0.5CoO3铁电电容器的结构和性能研究

采用磁控溅射法和脉冲激光沉积法,在SrTiO3(001)衬底上制备了La0.5Sr0.5CoO3(70 nm)/Pb(Zr0.4Ti0.6)O3(70 nm)/La0.5Sr0.5CoO3(70 nm) (LSCO/PZT/LSCO)铁电电容器异质结.X射线衍射结果表明:LSCO和PZT薄膜均为外延结构.在5 V的外加电压下, LSCO/PZT/LSCO电容器具有较低的矫顽电压(0.49 V),较高的剩余极化强度(41.7 μC/cm2 )和较低的漏电流密度(1.97×10-5 A/cm2),LSCO/PZT/LSCO电容器的最大介电常数为1073.漏电流的分析表明:当外加电压小于0.6 V时,电容器满足欧姆导电机制;当外加电压大于0.6 V时,符合空间电荷限制电流(SCLC)导电机制.     

pH值对电沉积法制备ZnS光学薄膜影响的研究

采用阴极恒电压法在ITO导电玻璃上沉积了ZnS薄膜,并用X射线衍射仪(XRD)、原子力显微镜(AFM)以及紫外/可见/近红外光谱仪对薄膜的结构和性能进行了表征,研究了pH值对薄膜的相组成、显微形貌以及光学性质的影响.结果表明:在pH=4,沉积时间为20 min,沉积电压为2 V,加入柠檬酸钠作络合剂的情况下,得到沿(200)晶面生长的立方相ZnS薄膜,薄膜组成均匀而致密,随pH值增加,禁带宽度降低.     

缓冲层ZnPc对有机电致发光器件特性的影响

本文研究了酞菁锌(ZnPc)薄膜的表面形貌及ZnPc薄膜作为缓冲层对有机电致发光器件(OLEDs)光电特性的影响.对比两组样品的AFM图像,ZnPc薄膜相比于ITO薄膜,其表面的岛面积较大,薄膜表面更连续平整,基本上覆盖了ITO膜表面针孔,减少了表面的缺陷.另外,ZnPc薄膜的岛分布均匀有序.使用ZnPc作为缓冲层的器件性能明显好于未使用ZnPc修饰的器件,在7.42V的驱动电压下的最大发光亮度达到1.428kcd/m2,在4.3V电压驱动下时,最大光功率效率为1.411m/W;而未使用缓冲层的器件在8V的驱动电压下达到最大发光亮度达到1.212kcd/m2,在5.5V电压驱动下时,最大光功率效率为0.931m/W.     

纳米非晶碳薄膜的制备及其场致电子发射特性

采用微波等离子体增强化学气相沉积(MPECVD)法,在涂有FeCl3的硅衬底上制备出了纳米非晶碳薄膜.通 过SEM、XRD和拉曼光谱分析了薄膜材料的形貌和结构.并研究了薄膜材料的场发射特性.结果表明:薄膜的开启电场仅为0.39 V/μm;当电场强度为1.85 V/μm时,电流密度高达3.06 mA/cm2;且场发射点均匀、密集、稳定.迭代法计算表明薄膜材料的功函数为3.1 eV,发射点密度约为1.7×105个/cm2.这些均表明该薄膜是一种性能优良的场发射阴极材料.     

衬底材料对Ba0.6Sr0.4TiO3薄膜介电性能的影响

采用脉冲激光沉积系统分别在LaAlO3(001)和MgO(001)衬底上沉积了Ba06Sr04TiO3(BST)薄膜,以Pt做电极分别构架了Pt/BST/MgO和Pt/BST/LaAlO3叉指电容器.利用X射线衍射仪、原子力显微镜和Aglient E4980LCR表分别对两种薄膜的结构、表面形貌和介电特性进行表征.研究发现:两种衬底都可以实现BST(001)薄膜的外延生长,MgO和LaAlO3衬底上BST薄膜的晶粒尺寸分别为52 nm和42 nm.在室温40 V偏置电压下,Pt/BST/MgO和Pt/BST/LaAlO3的调谐率分别为39.68;和29.55;,最低损耗分别为0.029和0.053.这说明衬底材料的晶格常数不同,最终导致了BST薄膜介电性能的不同.     

恒电压沉积SmS光学薄膜

以SmCl3·6H2O和Na2S2O3·5H2O为原料,采用电沉积法在ITO玻璃基板制备了SmS光学薄膜.采用XRD、AFM和紫外可见光分光光度计对薄膜进行了表征.研究了沉积电压和热处理温度对于薄膜的物相组成、显微结构和光学性能的影响.结果表明:在n(S):n(Sm)=4:1,溶液pH值为3.0,沉积电压为10 V以及热处理温度为400℃的条件下,可制备出主晶相为SmS且表面比较平整的薄膜.热处理后薄膜的禁带宽度增加.随着沉积电压的增加,SmS逐渐由金属相向半导体相转变,薄膜的禁带宽度相应地变大.     

灯丝温度对热丝CVD法制备p型氢化纳米晶硅薄膜微结构与光电性能的影响

本文采用热丝化学气相沉积法在不同灯丝温度(1650 - 1850℃)下沉积了p型氢化纳米晶硅薄膜,研究了灯丝温度对薄膜微结构、光学性能及电学性能的影响.结果表明,随着灯丝温度的升高,薄膜的晶化率先增大后略微减小,最大值是55.5;.载流子浓度和霍尔迁移率先分别从5×1017 cm-3和0.27 cm2/V·s增加到1.32×1020 cm-3和0.43 cm2/V·s后略微减小,同时电导率从0.02 S/cm显著增加到8.95 S/cm,而电导激活能则从271.5 meV急剧减小至25 meV.     

电沉积法制备Bi2S3薄膜研究

采用阴极恒电压法在ITO导电玻璃表面沉积了Bi2S3薄膜,利用X射线衍射(XRD)、原子力显微镜(AFM)对制备的薄膜进行了表征.研究了pH值、沉积时间、沉积液浓度等工艺因素对薄膜的影响.结果表明:电沉积制备Bi2S3薄膜的过程中,合适的Bi3+与S2O32-的浓度水平是至关重要的;在电沉积溶液pH=6.5,沉积时间为20 min,沉积电压为1 V,加入柠檬酸三钠作络合剂的情况下,得到沿(240)晶面生长良好的Bi2S3薄膜,薄膜组成均匀致密;增加沉积溶液pH值,薄膜的结晶程度逐渐提高,红外透过比提高.     

非晶 Ti-Al 过渡层对 Pt/Ba0.6Sr0.4TiO3/Pt电容器结构和性能的影响

应用磁控溅射法在 Pt/Ti/SiO2/Si(001)衬底上制备 5 mm 厚超薄非晶 Ti-Al 薄膜作为过渡层,利用脉冲激光沉积法制备 Ba0.6 Sr0.4TiO3 薄膜,构造了 Pt/Ba0.6Sr0.4TiO3/Pt(Pt/BST/Pt)和 Pt/Ti-Al/Ba0.6Sr0.4TiO3/Ti-Al/Pt(Pt/Ti-Al/BST/Ti-Al/Pt)结构的电容器,研究了 Ti-Al 过渡层对 Pt/BST/Pt 电容器结构及其性能的影响.实验表明,过渡层的引入有效地阻止了 Pt 电极和 BST 薄膜的互扩散,降低了 BST 薄膜氧空位的浓度,提高了铁电电容器的介电性能.当测试频率为 1 kHz、直流偏压为0 V时,介电常数由引入过渡层前的 530 增大到引入后的 601,介电损耗则由0.09减小到0.03.而且过渡层的引入有效地降低了 BST 薄膜的漏电流,使正负向漏电流趋于对称,在测试电压为5 V 时,漏电流密度由3.8×10-5 A/cm2 减小到 8.25 ×10-6 A/cm2.     

(001)高度择优取向Ba0.6Sr0.4TiO3/Pt异质结的结构及性能

采用射频磁控溅射法结合高真空后退火处理,在MgO(001)单晶基片上制备了Pt薄膜.应用脉冲激光沉积法在Pt/MgO上进一步生长了Ba0.6Sr0.4TiO3(BST)薄膜.借助X射线衍射仪(XRD)、铁电测试仪、LCR表研究了BST/Pt/MgO的结构和性能.研究发现,700 ℃真空退火可以保证Pt薄膜在MgO基片上实现(001)高度择优生长,以(001)Pt薄膜为模板,可以进一步获得(001)高度择优取向具有铁电性能BST薄膜.在100 Hz测试频率下,BST薄膜最大介电常数为1100、调谐率为81;、品质因数为21;在7 V的电压下,漏电流密度1.85×10-5 A/cm2,进一步分析表明,BST薄膜在0～2.6 V之间满足欧姆导电机制,在2.6～7 V之间满足普尔-弗兰克导电机制.     

Growth and characterization of nanostructured CdS/Polyaniline/CuInSe2 thin films for solar cell applications

In the present paper, we report about synthesis of nanostructured organic–inorganic heterojunction of CdS/Polyaniline/CuInSe₂ thin films by cost effective chemical route at room temperature, for solar cell application. As such obtained thin films are characterized for structural, compositional, morphological, optical and electrical properties by X-ray diffraction (XRD) pattern, energy dispersive X-ray (EDAX) analysis, scanning electron microscopy (SEM), optical absorbance spectra and I–V response respectively. The XRD reveals the polycrystalline nature of the thin films having tetragonal crystal structure and a crystallite size of 19 nm. The presence of observed and expected elements in the EDAX spectra confirms the elemental compositions in CdS/Polyaniline/CuInSe₂ thin films. From SEM images it can be inferred that the surface morphology of the Polyaniline thin films exists like clothing fibers, while CdS/CuInSe₂ shows granular shape particles distributed over the substrate and the SEM of CdS/Polyaniline/CuInSe₂ represents mixing and attachment of circular particles to fiber like structure. The optical absorbance spectra have shown red shift in absorbance strength and energy band gap value of CdS/CuInSe₂ from ~ 1.36 eV to ~ 1.62 eV upon formation of CdS/Polyaniline/CuInSe₂ thin film. The I–V response of CdS/CuInSe₂ and CdS/Polyaniline/CuInSe₂ measured under dark and illumination to 100 mW/cm² light, exhibited the solar characteristics from these graphs and the conversion efficiency calculated is observed to be 0.26 and 0.55% for CdS/CuInSe₂ and CdS/Polyaniline/CuInSe₂ thin films respectively.     

Modifications of epitaxy in evaporated films by electric charge effects

Modifications of epitaxy in Ge, Si, CdS, β-Sn, and α-Fe films, 100–600 Å in thickness, evaporated onto air-cleaved and vacuum-cleaved (001) NaCl substrates under electron bombardment (∽10¹⁵ electrons/cm² sec, at 200–400 V) or an electric field (dc 100–300 V/cm) applied to the substrate surface were investigated by reflection electron diffraction, transmission electron microscopy and selected-area diffraction. Results indicated that epitaxial temperatures of Ge and Si films were considerably lowered, and a monocrystalline β-Sn film was produced by the application of electron bombardment. The application of electric field resulted in the formation of an epitaxial cubic CdS phase, and a single orientation in an α-Fe film. These results are discussed in terms of current speculation concerning the electric charge effects on alkali halide substrates.     

Rotary target method to prepare thin films of CdS/SiO2 by pulsed laser deposition

Thin films of CdS-doped SiO₂ glass were prepared by using the conventional pulsed laser deposition (PLD) technique. The laser target consisted of a specially constructed rotary wheel which provided easy control of the exposure-area ratio to expose alternately the two materials to the laser beam. The physical target assembly avoided the potential complications inherent in chemically mixed targets such as in the sol–gel method. Time-of-flight (TOF) spectra confirmed the existence of the SiO₂ and CdS components in the thin-film samples so produced. X-ray diffraction (XRD) and atomic force microscopy(AFM) results showed the different sizes and structures of the as-deposited and annealed films. The wurtzite phase of CdS was found in the 600^oC-annealed sample, while the as-deposited film showed a cubic–hexagonal mixed structure. In the corresponding PL (photoluminescence) spectra, a red shift of the CdS band edge emission was found, which may be a result of the interaction between the CdS nanocrystallite and SiO₂ at their interface.     

不同形貌TiO2薄膜的可控制备及其光电化学性能研究

采用水热法在FTO(fluorine-doped tin oxide)基底上制备不同形貌的锐钛矿结构TiO₂薄膜。通过不断增大反应前驱物中盐酸浓度,TiO₂薄膜由球状颗粒薄膜逐渐演变生长成大面积高能(001)面裸露的TiO₂纳米片阵列薄膜。通过对形貌演化规律及X射线衍射图谱变化规律进行分析,提出了不同形貌TiO₂薄膜的生长演化机制,并对盐酸在其中的作用进行了说明。为了进一步改善TiO₂薄膜的性能,采用连续离子层吸附反应法对不同形貌的TiO₂薄膜进行CdS量子点敏化。采用紫外可见吸收光谱分析法和三电极体系对复合薄膜的光吸收性能和光电化学(PEC)性能进行了研究,实验数据显示CdS/TiO₂复合薄膜的光电化学性能皆明显优于单纯TiO₂薄膜,而且纳米片阵列薄膜的性能明显优于其他形貌薄膜,说明了大面积高能(001)面裸露的TiO₂纳米片阵列薄膜的性能优越性。     

Structural and electrical properties of CdS thin films evaporated onto GaAs substrates

CdS thin films on GaAs substrates are prepared by single source thermal evaporation under high vacuum conditions. Films on (111)A-oriented substrates have the wurtzite structure, whereas in the case of (1 1 1 )B-oriented substrates the sphalerite structure predominates. Depositing films on pre-annealed substrates a tetragonal phase with a composition near CdGa₂S₄ was found. The electron concentration in the CdS films is influenced by the substrate temperature, the growth rate of the films, and the substrate orientation.     

Photostimulated changes of properties of CdTe films

The effect of illumination during the close‐spaced sublimation (CSS) growth on composition, structural, electrical, optical and photovoltaic properties of CdTe films and CdTe/CdS solar cells were investigated. Data on comparative study by using X‐ray diffraction (XRD), scanning electron microscopy (SEM), absorption spectra and conductivity‐temperature measurements of CdTe films prepared by CSS method in dark (CSSD) and under illumination (CSSI) were presented. It is shown that the growth rate and the grain size of CdTe films grown under illumination is higher (by factor about of 1.5 and 3 respectively) than those for films prepared without illumination. The energy band gap of CdTe films fabricated by both technology, determined from absorption spectra, is same (about of 1.50 eV), however conductivity of the CdTe films produced by CSSI is considerably greater (by factor of 10⁷) than that of films prepared by CSSD. The photovoltaic parameters of pCdTe/nCdS solar cells fabricated by photostimulated CSSI technology (J_sc = 28 mA/cm², V_oc =0.63 V) are considerably larger than those for cells prepared by CSSD method (J_sc = 22 mA/cm², V_oc = 0.52 V). A mechanism of photostimulated changes of properties of CdTe films and improvement of photovoltaic parameters of CdTe/CdS solar cells is suggested. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

CeO_2缓冲层热处理对Tl-2212薄膜超导特性的影响

本文采用原子力显微镜(AFM)和XRD研究了生长在蓝宝石(11-02)基片上的CeO_2缓冲层在不同的退火温度和退火时间下表面形貌和相结构的变化,以及对Tl-2212薄膜超导特性的影响.AFM和XRD研究表明,CeO_2薄膜在流动氧环境中退火,表面形貌发生显著的变化;CeO_2薄膜在最佳条件下退火后,可获得原子级光滑表面,结晶质量明显提高.实验结果表明,缓冲层的结晶质量和表面粗糙度与Tl-2212薄膜的超导特性密切相关.在经过最佳条件退火后的CeO_2缓冲层上制备了厚度为500 nm无裂纹的Tl-2212超导薄膜,其临界转变温度(T_c)达到107 K,液氮温度下临界电流密度(J_c)为3.9 MA/cm~2(77 K,0 T),微波表面电阻(R_s)约为281 μΩ(77 K,10 GHz).     

Epitaxial growth of some II–VI compound films evaporated onto electron-bombarded NaCl substrates

Epitaxial growth of CdS, CdSe, CdTe and ZnSe films, several 10–1000 Å in thickness, evaporated onto (001), (110) and (111)NaCl substrates at 50–400° C, with or without electron bombardment, and almost perpendicularly to the substrate surface, was investigated by RHEED, TEM, TED and XMA. Without electron bombardment, both wurtzite and sphalerite phases generally coexisted in the films. When the substrates were bombarded with electrons (∽10¹² electrons/cm² · sec at 300–500 V) during evaporation at about 150–300° C a single-crystal film of the sphalerite phase was obtained on the (001) and (110)NaCl, and that of the wurtzite phase on the (111)NaCl. Similar effects were observed also when the electron bombardment was applied to the substrate immediately before or in the very early stages of the deposition, or only to the evaporation vapor during the deposition. These results indicate that surface defects and electric charges of the substrate and the vapor play very important roles in the epitaxial process of these compounds.     

本征微晶硅薄膜和微晶硅电池的制备及其特性研究

本文对VHF-PECVD制备的本征微晶硅薄膜和电池进行了电学特性和结构特性方面的测试分析研究.电学测试结果给出制备薄膜的激活能为0.51eV,符合电池对材料的电学参数要求;拉曼散射谱测试结果计算得到样品的晶化率为63;;X射线衍射结果也证明材料晶化,同时(220)方向择优;首次在国内用VHF-PECVD方法制备出效率为5;的微晶硅电池(Jsc=21mA/cm2,Voc=0.46V,FF=51;,Area=0.253cm2).     

CdS薄膜中"白斑"的研究

本论文对CdS薄膜中的"白斑"进行了研究.化学水浴沉积法(CBD)制备CdS薄膜所需要的化学反应物包括硫脲、氨水、镉盐和铵盐等.文中采用两种镉盐和铵盐来沉积CdS薄膜:氯化镉和氯化铵,乙酸镉和乙酸铵.所沉积的CdS薄膜的表观形貌由SEM表征,成分由EDX表征.当镉盐和铵盐分别采用氯化镉和氯化铵时,生成的薄膜中存在大量的"白斑".这些"白斑"的成分不是CdS,而是(CdCl)2S.增加氨水的浓度可以大大减少这些"白斑",但是不能彻底消除这些"白斑".当镉盐和铵盐分别采用乙酸镉和乙酸铵时,生成的薄膜均匀、平整,薄膜中根本就不存在所谓的"白斑".因此,沉积CdS薄膜时,镉盐和铵盐不宜采用氯化镉和氯化铵,应该采用乙酸镉和乙酸铵.