High temperature thermoelectric properties of highly c-axis oriented Bi2Sr2Co2Oy thin films fabricated by pulsed laser deposition

High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co20v thin films prepared by pulsed laser deposition on LaA1Oa （001）. Both the electric resistivity p and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m. cm and 202 V/K at 980 K, resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples. A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature. The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application has high temperature thin film thermoelectric devices,     

The effects of the intense laser field on bound states in GaxIn1-xNyAs1-yN/GaAs single quantum well

We have investigated the effects of the intense laser field and nitrogen concentration on bound state energy levels in Ga _x In_{1- x} N _y As_{1- y} N/GaAs quantum well. The results show that both intense laser field and N-incorporation into the GaInNAs have strong influences on carrier localization. We hope that our results can stimulate further investigations of the related physics, as well as device applications of group-III nitrides.     

Compact, efficient diode-end-pumped Nd:GdVO4 slab continuous-wave 912-nm laser

A fiber-coupled laser-diode (LD) end-pumped Nd:GdVO₄ slab continuous-wave (CW) 912-nm laser and an LD bar end-pumped Nd:GdVO₄ slab CW 912-nm laser are both demonstrated in this paper. Using the fiber-coupled LD of end-pumped type, a highest CW 912-nm laser output power of 10.17 W is obtained with a high optical-to-optical conversion efficiency of 24.6% and a slope efficiency of 34.5%. The measured M² factors of beam quality in x and y directions are 5.3 and 5.1, respectively. Besides, an LD bar of end-pumped type is used to realize CW 912-nm laser output, which has the advantages of compactness and low cost. When the pump power is 38.8 W, the output power is 8.87 W and the measured M² factors of beam quality in x and y directions are 16 and 1.31, respectively. In order to improve the beam quality of the 912-nm laser at x direction, a new quasi-concentric laser resonator will be designed, and an LD bar end-pumped Nd:GdVO₄ slab high-power CW 912-nm TEM₀₀ laser will be realized in the future.     

Nd0.67Sr0.33MnOy(y<3.0)中的自旋相关电致电阻效应

用固相反应法制备系列Nd_0.67Sr_0.33MnO_y(y = 3.00—2.80)多晶样品.样品输运性质表现出自旋相关电致电阻特征.对氧含量等于化学计量样品，在测量温度范围内电阻不随负载电流变化，I-V曲线符合线性欧姆定律.对氧含量低于化学计量样品，当高于某一特征温度时，电阻变化符合线性欧姆定律；但低于这一特征温度时，电阻大小与负载电流有关，I-V曲线偏离线 关键词： 钙钛矿结构锰氧化物 电致电阻效应 自旋相关界面输运 氧缺陷     

Formation and photodecomposition of cationic titanium oxide clusters

In this paper we report on the titanium oxide cluster cations Ti _x O _y ⁺, generated by laser ablation of a titanium target in the region of the nozzle expansion of oxygen. The mass distribution of the clusters produced is recorded with a time-of-flight mass spectrometer. Three different series, namely TiO(TiO₂) _n ⁺ , TiO(TiO₂) _n O₂⁺, and (TiO₂) _n ⁺, appear in the spectra. Two different ablation wavelengths (infrared at 1064 nm and ultraviolet at 308 nm) are used to generate the titanium oxide clusters. At the shorter wavelength the maximum size of the clusters formed decreases. The interaction of the UV photons with the Ti _x O _y ⁺ clusters is further investigated in a separate two-laser arrangement with an IR laser for ablation and after some mm downstream with an UV system for the cluster beam irradiation. These studies indicate that the intensity of the T _x O _y ⁺ clusters with x≥4, y≥7 is strongly influenced by the absorption of UV photons. This is attributed mainly to dissociation into smaller ones.     

Carrier hopping in InAs/AlyGa1−yAs quantum dot heterostructures: effects on optical and laser properties

The optical properties of InAs/Al_yGa_1−yAs self-assembled quantum dots are studied as a function of temperature from 10 K to room temperature. The temperature dependence of carrier hopping between dots is discussed in terms of the depth of the dot confinement potential and the dispersion in dot size and composition. We show that carrier hopping between dots influences both the electrical and optical properties of laser devices having dots as active medium.     

Ternary alloys CdyZn1 ? yO and MgxZn1 ? xO as materials for optoelectronics

Thin films of Cd _y Zn_{1 − y} O and Mg _x Zn_{1 − x} O (y = 0−0.35, x = 0−0.45) ternary alloys have been grown by pulsed laser deposition onto sapphire substrates. The record solubility limits of Cd (y = 0.3) and Mg (x = 0.35) have been achieved in hexagonal zinc oxide. The mismatch of the lattice parameters a of Cd_0.2Zn_0.8O and Mg_0.35Zn_0.65O does not exceed 1%; in this case, the band gap discontinuity is 1.3 eV. The surface roughness of the films does not exceed 2.5 nm at x = 0−0.27 and y = 0−0.20.     

Short pulse width UV laser at 355 nm based on pulse LD side-pumped ceramic Nd:YAG and BBO electro-optical Q-switched

355 nm UV laser was obtained with a pulse width of less than 5 ns and a peak power at megawatt level by adopting the 808 nm pulse laser diode (LD) side-pumped ceramic Nd:YAG and BBO crystal electrooptical Q-switched. The single-pulse energy was measured to be 24.3 mJ with 4.86 ns pulse width and 5.11 MW peak power at a repetition rate of 1Hz under a 120 A pump current. Using a volume of beam splitting mirrors, wavelength outputs at 1064, 532, and 355 nm pulse laser was obtained simultaneously with a respective average output power of 656.6, 357.1, and 260.5 mW, the beam quality factor M ₂ are (M _{x − 1064}² = 5.83, M _{y − 1064}² = 5.61), (M _{x − 532}² = 4.25, M _{y − 532}² = 4.08) and (M _{x − 355}² = 6.32, M _{y − 355}² = 6.15), corresponding to a conversion efficiency at 11% from 1064 to 355 nm.     

飞秒强激光场中水分子的电离激发

本文运用含时密度泛函理论和分子动力学非绝热耦合的方法, 研究了水分子在不同极化方向的激光场中的电离和动力学行为. 计算结果表明, 对应相同的极化方向, 随着激光强度的增加, 水分子的电离增强; 对于相同强度的激光, 当激光极化方向沿水分子对称轴方向时, 水分子的电离最强, 当激光极化方向垂直水分子对称轴方向时, 水分子电离受到最大程度的抑制. 对水分子偶极矩的研究表明, 当分子处于线性响应区域时, x方向的激光只能激发起x方向的偶极振动而y方向的激光只能激发起y方向的偶极振动. 对水分子的键长和键角的研究表明, 在激光场中水分子的键长变长, 键角变大, 但变化幅度随着激光极化角的增大而减小. 此外, 研究还发现, 虽然在不同极化方向的激光脉冲的驱动下, 水分子OH键的振动频率与激光频率相当, 在脉冲关闭后, 振动频率减小, 但激光场的极化方向对水分子振动模式具有选择性. 关键词： 含时密度泛函理论 分子动力学 水分子 电离     

LixNayCoO2的制备和热电性质

用固相反应方法，成功地合成了具有交互生长结构的Li_xNa_yCoO₂单相多晶系列样品. 热电势测量表明，该系统的室温热电势比Na_xCoO₂体系约高出60μV/K. 基于空穴载流子具有O2p特征，提出Li_xNa_yCoO₂中额外的热电势来源于氧空穴的占位熵. 关键词： xNa_yCoO₂')" href="#">Li_xNa_yCoO₂ 热电势 热电材料     

Coupling characteristics of high birefringence dual-core As2S3 rectangular lattice photonic crystal fiber

A type of As₂S₃ chalcogenide glass mid-infrared dual-core photonic crystal fiber has been proposed. The dual-core photonic crystal fiber (PCF) consists of two asymmetric cores. The high polarization property and the coupling characteristics have been studied by using the finite element method and mode coupling theory. Numerical results show that the birefringence at wavelength λ = 10 μm is up to 0.01386 and the coupling length can reach wavelength λ = 5 μm, 261 μm and 271.44 μm for x-polarized mode and y-polarized mode, respectively. It demonstrates that a 6.786-mm-long fiber can exhibit an extinction ratio of better than -10 dB and a bandwidth of 180 nm.     

光子晶体微腔中高偏振单偶极模的研究

三角晶格排列的光子晶体微腔中的偶极模式是简并的,通过改变其晶格的对称性可以消除模式简并.晶格的整体形变破坏了晶格对称性从而影响光场的分布,同时还改变了电磁场的偏振分布.晶格整体形变使得简并的偶极模式分离成x极和y极偶极模式.通过计算分析发现分离后的模式具有良好的偏振特性,从而为实现单偏振光子晶体激光器提供了一种很好的途径.文中针对光子晶体薄板结构的微腔,主要计算了偶极模中x极偶极模式在不同拉伸时以及不同填充因子情况下的Q值,并分别计算了x关键词： 光子晶体 偶极模 品质因子 偏振度     

A novel orthogonally linearly polarized Nd:YVO4 laser

We presented a novel orthogonally linearly polarized Nd:YVO₄ laser. Two pieces of a-cut grown-together composite YVO₄/Nd:YVO₄ crystals were placed in the resonant cavity with the c-axis of the two crystals orthogonally. The polarization and power performance of the orthogonally polarized laser were investigated. A 26.2-W orthogonally linearly polarized laser was obtained. The power ratio between the two orthogonally polarized lasers was varied with the pump power caused by the polarized mode coupling. The longitudinal modes competition and the corresponding variable optical beats were also observed from the orthogonally polarized laser. We also adjusted the crystals with their c-axis parallele to each other, and a 40.7-W linearly polarized TEM₀₀ laser was obtained, and the beam quality factors were M²_x=1.37 and M²_y=1.25.     

Comparative study of (1 0 0) and (1 1 1)B InGaAs single quantum well laser diodes

In this work, a series of identical In_xGa_1−xAs/Al_yGa_1−yAs single quantum well laser diodes, grown on (1 0 0) and (1 1 1)B GaAs substrates, have been thoroughly studied. For all samples, clear evidence of reduced threshold current densities in the (1 1 1)B substrate has been observed in electroluminescence spectra at 17 and 300 K. Modelling of the devices, based on a self-consistent solution of Schrödinger–Poisson's equations, was utilised in order to reproduce the experimental results. The model incorporates strain and piezoelectric effects on the quantum well states, free carrier screening, overlap integral computation, and optical gain calculation. The underlying mechanism, that explains the threshold reduction observed in the (1 1 1)B laser diodes, is discussed based on the results of the modelling.     

High repetition rate intracavity frequency doubled LD side-pumped ceramic Nd:YAG green laser based on BBO electro-optical Q-switch

a high repetition rate and high power 532 nm green laser generated by intracavity frequency doubling of a 808 nm laser diode side-pumped ceramic Nd:YAG laser based on BBO electro-optical Q-switch has been demonstrated. in the simple V-folded cavity, the maximum green laser average power 32.6 W was obtained with a pulse width of 58.5 ns at a repetition rate of 10 kHz by using a LBO crystal for frequency doubling, corresponding to a conversion efficiency of 10.9% from diode pumping power to green laser power. An instability of 1.9% was measured over a period of 30 minutes and the beam quality factors were measured to be M _x ² = 3.55, M _y ² = 3.89 at the maximum output power.     

LD side-pumped 41 W high beam quality acousto-optical Q-switched single-rod Nd:YAG laser

We report a LD side-pumped high beam quality (M _x ² = 1.20 and M _y ² = 1.19) acousto-optic (AO) Q-switched single-rod Nd:YAG laser with a TEM₀₀-mode dynamic stable cavity. At the pump power of 600 W, 41 W TEM₀₀-mode 1064 nm laser was achieved with electro-optical conversion efficiency of 7%. The repetition rate and pulse width were 30 kHz and 102 ns, respectively with pulse energy of 1.4 mJ and peak power of 13 kW. Up to 24 W of 532 nm green laser was generated by external frequency doubling, corresponding to 59% optical conversion efficiency.     

Continuous-wave laser at 453 nm based on frequency-doubled diode-pumped Nd:ASL crystal

Efficient and compact is generated by intracavity frequency doubling of a diode-pumped Sr_1−x La _{x − y} Nd _y Mg _x Al_{12 − x} O₁₉(Nd:ASL) laser at 906 nm. With 10.3 W of diode pump power and the frequency-doubling crystal LiB₃O₆ (LBO), a maximum output power of 281 mW in the blue spectra] range at 453 nm has been achieved, corresponding to an optical-to-optical conversion efficiency of 2.7%; the output power stability over 4 h is better than 3.8%.     

High power composite Nd:YAG/YAG zigzag dual-slab laser oscillator

We report a high power zigzag slab laser oscillator employing two composite Nd:YAG/YAG slab in the cavity. The CW laser output with the power of 401 W was achieved from the oscillator with the optical-optical efficiency of 32.6%. The beam quality is estimated as M _x ² ≈ 10, M _y ² ∼ 50 in the slab width and thickness direction, respectively.     

Comparison of the band alignment of strained and strain-compensated GaInNAs QWs on GaAs and InP substrates

We present a comparison of the band alignment of the Ga_1−xIn_xN_yAs_1−y active layers on GaAs and InP substrates in the case of conventionally strained and strain-compensated quantum wells. Our calculated results present that the band alignment of the tensile-strained Ga_1−xIn_xN_yAs_1−y quantum wells on InP substrates is better than than that of the compressively strained Ga_1−xIn_xN_yAs_1−y quantum wells on GaAs substrates and both substrates provide deeper conduction wells. Therefore, tensile-strained Ga_1−xIn_xN_yAs_1−y quantum wells with In concentrations of x0.53 on InP substrates can be used safely from the band alignment point of view when TM polarisation is required. Our calculated results also confirm that strain compensation can be used to balance the strain in the well material and it improves especially the band alignment of dilute nitride Ga_1−xIn_xN_yAs_1−y active layers on GaAs substrates. Our calculations enlighten the intrinsic superiority of N-based lasers and offer the conventionally strained and strain-compensated Ga_1−xIn_xN_yAs_1−y laser system on GaAs and InP substrates as ideal candidates for high temperature operation.     

A simple model for optimization design of high performance In1−x−y Ga y Al x As strained MQW DFB lasers

It is well known that complex rate equations and the couple wave equation have to be solved by the method of iteration in the simulation of multi-quantum well (MQW) distributed feedback Bragg (DFB) lasers, and a long CPU time is needed. In this paper, from the oscillation condition of lasers, we propose a simple and fast model for optimization of In_1–x–y Ga _y Al _x As strained MQW DFB lasers. The well number and the cavity length of 1.55 m wavelength In_1–x–y Ga _y Al _x As MQW DFB lasers are optimized using the model. As a result, the simple model gives almost the same results as the complex one, but 90% CPU time can be saved. In addition, a low threshold, high maximum operating temperature of 550–560 K, and high relaxation oscillation frequency of over 30 GHz MQW DFB laser is presented.