Athermal annealing of Mg-implanted GaAs

High-resolution X-ray diffraction scans and electrical resistivity measurements were performed on Mg-implanted GaAs exposed to laser shock annealing on both the implanted and the unimplanted surfaces of the wafer. Measurements on the sample that was subjected to a laser pulse exposure on the implanted side indicate that annealing had occurred within 3 mm of the center of the laser-exposed spot. X-ray scans and the topographs indicate the propagation of a mechanical wave propagating in the radial direction from the laser-exposed spot. No evidence of annealing, however, was observed at any position on the Mg-implanted GaAs sample that was subjected to a laser pulse exposure on the unimplanted side. The Mg implant did not show any redistribution for the laser-shocked annealing, in contrast to the conventional rapid thermal annealing. PACS 61.72.Vv; 62.50.+p; 71.55.Eq; 79.20.Ds; 81.05.Ea     

Laser annealing process of ITO thin films using beam shaping technology

In this study, we develop a laser annealing system for In₂O₃Sn (ITO) to carry out heat treatment on oxides with high melting temperature on substrates with low melting temperature. It is known that the working temperature of traditional heat treatments is usually limited by the melting point of the substrate materials. To overcome this problem, we apply a laser annealing technique to modify the film properties, and to measure the electrical and surface properties, we use Hall measurement, a four-point probe, and an atomic force microscope in our experiment. We will discuss how the annealing is affected by the laser machining parameters, including the beam profile, intensity distribution, laser spot overlap, and laser operation mode. We will further show through experimental results that the beam profile greatly affects the surface roughness of the ITO films. With the use of a uniform beam profile with proper laser intensity, the surface roughness and the sheet resistance of the ITO films can be reduced from 23 nm to 4.2 nm and from 417 Ω/sq to 400.4 Ω/sq, respectively.     

Effect of laser annealing using high repetition rate pulsed laser on optical properties of phosphorus-ion-implanted ZnO nanorods

The effect of high repetition rate pulsed laser annealing with a KrF excimer laser on the optical properties of phosphorus-ion-implanted zinc oxide nanorods has been investigated. The recovery levels of phosphorus-ion-implanted zinc oxide nanorods have been measured by photoluminescence spectra and cathode luminescence images. Cathode luminescence disappeared over 300 nm below the surface due to the damage caused by ion implantation with an acceleration voltage of 25 kV. When the annealing was performed at a low repetition rate of the KrF excimer laser, cathode luminescence was recovered only in a shallow area below the surface. The depth of the annealed area was increased along with the repetition rate of the annealing laser. By optimizing the annealing conditions such as the repetition rate, the irradiation fluence and so on, we have succeeded in annealing the whole damaged area of over 300 nm in depth and in observing cathode luminescence. Thus, the effectiveness of high repetition rate pulsed laser annealing on phosphorus-ion-implanted zinc oxide nanorods was demonstrated.     

Theoretical considerations regarding pulsed CO2 laser annealing of silicon

We present a calculation of the surface temperature and investigate the “thermal runaway” phenomenon during pulsed CO₂ laser (λ = 10.6 μm) annealing of silicon. In calculating the temperature variation of free carrier absorption in n-Si, we have taken into account acoustic deformation potential scattering, optical deformation potential scattering, and ionized impurity scattering. The deformation potentials are adjusted to fit the experimentally observed values at 300°K. Also, we discuss the contribution of free carrier absorption during annealing with a Nd:glass laser (λ = 1.06 μm).     

Investigation of laser annealing parameters for optimal laser-damage performance in deuterated potassium dihydrogen phosphate

Laser annealing via preexposure to laser pulses at sub-damage-threshold fluences is known to improve the resistance of KDP crystals to laser-induced damage. Using a specific damage-testing method, we investigate the laser annealing process as a function of fluence and number of preexposure pulses (at 355 nm, 2.5 ns). Our aim is to reveal the key laser parameters in order to devise a practical and efficient protocol for optimizing performance of the material for operation in laser systems in the near UV. Results suggest that a near twofold improvement to the laser-damage performance can be achieved with a limited number of preexposure pulses.     

Ultra short pulse laser annealing of FeB metallic glasses

We present the results of picosecond laser annealing of as-quenched Fe₈₅B₁₅ and Fe₈₂B₁₈ metallic glasses. The influence of the laser radiation on the surface and bulk properties are studied using CrK X-ray diffraction and transmission Mössbauer spectroscopy. The X-ray data show that the amorphous nature of the surface of the samples can be improved with laser treatment. The mat (cooling) surfaces of the ribbons appear to be more affected by the laser treatment, and show a higher stability. The Mössbauer data reveal that laser annealing of ribbon surfaces also affects the bulk properties of these materials due to induced stresses from the surface layer. The magnetic properties of these materials can be modified by laser annealing.     

Protection of isolated and active regions in AlGaN/GaN HEMTs using selective laser annealing

Al Ga N/Ga N high-electron-mobility transistors with Au-free ohmic contacts are fabricated by selective laser annealing and conventional rapid thermal annealing. The current transport mechanism of ohmic contacts is investigated. Hightemperature annealing can be avoided in the isolated region and the active region by selective laser annealing. The implanted isolation leakage current is maintained 10-6 m A/mm even at 1000 V after selective laser annealing. On the contrary, hightemperature annealing will cause obvious degradation of the isolation. The morphology of Al Ga N surface is measured by atomic force microscope. No noticeable change of the Al Ga N surface morphology after selective laser annealing, while the root-mean-square roughness value markedly increases after rapid thermal annealing. The smaller frequency dispersion of capacitance–voltage characteristics confirms the lower density of surface states after selective laser annealing. Thus,dynamic on-resistance is effectively suppressed.     

Fiber laser annealing of indium-tin-oxide nanoparticles for large area transparent conductive layers and optical film characterization

Indium tin oxide (ITO) coatings are widely used as transparent electrodes for optoelectronic devices. The most common preparation methods are sputtering, evaporation, and wet chemical deposition. ITO coatings can also be manufactured by solution deposition of ITO nanoparticles followed by furnace thermal annealing with the major motivation to reduce equipment investment. However, conventional furnace annealing is energy intensive, slow, and limited by the peak processing temperature. To overcome these constraints, we suggest using a laser beam for ITO nanoparticle annealing over a large area. It is shown in the present study that a low cost, high power, and high efficiency laser can yield large area functional ITO films in a process that carries substantial promise for potential industrial implementation. Furthermore, laser annealing generates higher electrical conductivity than conventional, thermally annealed nanoparticle films. The optical and electrical properties of the annealed ITO films can also be altered by adjusting laser parameters and environmental gases.     

Laser annealing of radiation defects in low disordered layers

Abstract

Carrier concentration and mobility dependences on the annealing temperature have been compared for the cases of thermal (10 min) and laser (8 ms) annealing of silicon, implanted with low doses of P⁺ ions. It was found that the recovery of concentration and mobility depended on the heating time in different ways. The laser annealing requires higher temperatures for mobility recovery then the thermal treatment. The same temperature shift was observed for increase of carrier concentration but only after doses less than 3.10¹²m^?2. When the doses exceeded 3.10¹² cm^?2 laser and thermal annealing resulted in equal electron concentrations providing the equality of heating temperatures. Annealing of disordered regions was accounted for the mobility recovery. The increase of electron concentration was explained as an instantaneous decay of defect-impurity complexes. To check the validity of the assumptions laser annealing of electron and light ions irradiated materials was investigated.     

Laser annealing of Al implanted silicon carbide: Structural and optical characterization

Pulsed-laser-based methods have been applied for post-implant annealing of p-type Al-doped 4H-SiC wafers in order to restore the crystal structure and to electrically activate the doping species. The annealing was performed with the third harmonic (355 nm) of a Nd:YAG laser at 4 ns pulse duration. The epilayers were characterized by micro-Raman spectroscopy under surface and cross-sectional backscattering. Changes in the phonon mode-intensity were related to the laser annealing induced recrystallization of the implanted material. The results were compared with changes in the infrared reflectivity across the Reststrahlen band. Transmission electron microscopy analysis showed the formation of columnar polycrystalline structure after the laser annealing process.     

Laser annealing of silicon layers amorphized by molecular ions

The behaviour, after laser beam annealing, of heavily doped silicon layers obtained by a high current density atomic and molecular ion bombardment is investigated. The ion beam is realized by glow discharge of a gas containing the dopant, acceleration towards the sample, without any magnet.

The annealing is performed by using a high power (3.5 J/cm²) pulsed laser and the surfaces are studied by Rutherford backscattering, secondary ions mass spectroscopy and conductivity measurements. Comparison with a classical thermal annealing shows the advantage of the laser pulse to restore completely the original cristallinity, even if the layer is im-planted at doses in excess the solubility limit of the dopant, leading to a full surface amorphization.     

Time resolved calorimetry of te films during pulsed laser annealing

Using a pyroelectric thin-film calorimeter the temperature of 30 nm thick Te films during pulsed laser annealing was studied in real-time. A XeCl excimer laser pumped dye laser with Raman shifter was utilized to study the wavelength and energy dependence. No significant wavelength dependence was noticed. Depending on the pulse energy, however, melting, boiling and crystallization of the Te films was observed. These findings support a strictly thermal model for laser annealing and optical recording with Te based media. In addition boiling was identified as the prevalent mechanism for the loss of material.     

High-temperature laser annealing for thin film polycrystalline silicon solar cell on glass substrate

Thin film polycrystalline silicon films grown on glass substrate were irradiated with an infrared continuous wave laser for defects annealing and/or dopants activation. The samples were uniformly scanned using an attachment with the laser system. Substrate temperature, scan speed and laser power were varied to find suitable laser annealing conditions. The Raman spectroscopy and Suns-V _oc analysis were carried out to qualify the films quality after laser annealing. A maximum enhancement of the open circuit voltage V _oc of about 100?mV is obtained after laser annealing of as-grown polysilicon structures. A strong correlation was found between the full width half maximum of the Si crystalline peak and V _oc. It is interpreted as due to defects annealing as well as to dopants activation in the absorbing silicon layer. The maximum V _oc reached is 485?mV after laser treatment and plasma hydrogenation, thanks to defects passivation.     

Superconducting V3Si produced by pulsed laser annealing

Pulsed laser annealing has been utilized to fabricate superconducting V₃Si from multilayer V-Si thin film samples. It is demonstrated that a single laser pulse can induce mixing to form V₃Si in the A15 phase. The effects of multiple laser pulses and post thermal annealing on the superconducting transition temperature and width are presented, and a model is proposed to explain the effects of rapid heating and cooling on the V₃Si structure.     

CW CO2-laser annealing of arsenic implanted silicon

CW CO₂-laser annealing of arsenic implanted silicon was investigated in comparison with thermal annealing. Ion channeling, ellipsometry, and Hall effect measurements were performed to characterize the annealed layers and a correlation among the different methods was made. The laser annealing was done with power densities of 100 to 640 W cm⁻² for 1 to 20 s. It was found that the lattice disorder produced during implantation can be completely annealed out by laser annealing with a power density of 500 W cm⁻² and the arsenic atoms are brought on lattice sites up to 96±2%. The maximum sheet carrier concentration of 6×10¹⁵ cm⁻² was obtained for 1×10¹⁶ cm⁻² implantation after laser annealing, which was up to 33% higher than that after thermal annealing at 600 to 900°C for 30 min.     

Nd: YAG laser annealing of gallium-implanted silicon

A Q-switched Nd: YAG laser with a pulse duration of 20 ns was used to investigate effects of laser annealing in gallium implanted silicon. Rutherford backscattering and Hall-effect measurements were performed to evaluate the annealed layer. Differential Hall-effect measurements were carried out to obtain carrier concentration profiles after annealing. It was found that a maximum sheet carrier concentration of 8×10¹⁵ cm⁻² can be obtained for a gallium implantation of 10¹⁶ cm⁻² by laser annealing with an energy density of more than 1.0 J cm⁻². Although the peak carrier concentration was found to be 8.0×10²⁰ cm⁻³, the annealed layer showed polycrystalline structures even after annealing with an energy density up to 4J cm⁻². The annealing took place in the solid phase in this energy density range.     

退火参数对熔石英透射波前和损伤阈值的影响

 采用高温退火技术去除熔石英元件表面由于CO2激光修复带来的残余应力,研究了退火环境对元件的表面污染,分析了不同退火温度（600～900 ℃）和保温时间（3～10 h）对于元件残余应力、透射波前、表面粗糙度和激光损伤阈值的影响。结果表明:在800 ℃以下,高温退火10 h可有效去除CO₂激光修复带来的残余应力,对元件的透射波前和表面粗糙度无明显影响;石英保护盒能有效减少退火环境对元件表面产生的污染,但仍有X射线光电子能谱检测不到的表面污染物存在;在退火后采用质量分数为1%的HF刻蚀15 min,激光损伤阈值可恢复,同时元件透射波前和表面粗糙度并无明显的增加。     

Pulsed-laser annealing of GaAs surface studied by time-resolved second-harmonic generation in reflection

Experimental results are presented on the time dependence of the second-harmonic generation (SHG) of a mode-locked Q-switched Nd: YAG laser in reflection from both amorphous and crystalline GaAs surfaces during the pulsed-laser annealing under ruby laser irradiation. A dramatic increase of SHG by more than two orders of magnitude due to recrystallization of the noncentrosymmetric GaAs lattice in the process of pulsed-laser annealing is observed and the duration of surface recrystallization is measured to be not greater than 30–40 ns. The results can be fully understood in terms of the melting model of laser annealing.     

Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing

The physical mechanisms of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures by laser annealing and rapid thermal annealing are systematically investigated. The microstructures indicate that a better surface morphology and an intact contact interface are formed after laser annealing. None of the TiN alloy spikes are formed at the interface of the laser annealing sample. The experimental results show that the current transport mechanism through the ohmic contact after laser annealing is different from the conventional spike mechanism, and it is dominated by thermionic field emission.     

Partial magnetization reversal using laser annealing in patterned NiFe/FeMn film

We have studied local magnetization reversal by laser annealing in exchange biased NiFe/FeMn bilayer. Local magnetization reversal was performed by using the Nd:YAG laser under external magnetic field. When the laser illuminated the patterned film with the power of above 300 mW during 15 min, a magnetoresistance (MR) curve with symmetric peaks at the opposite field was obtained due to the local reversal of exchange biasing. A similar result was observed in NiFe/FeMn/NiFe trilayer. As the exposed area expanded, the intensity of opposite MR peak increased. The direction of exchange anisotropy in the partially reversed region can be restored by local laser annealing under alternating magnetic field, even if its MR peak was reduced by the damage and interdiffusion. The magnetic new domain structures of the partially reversed region was generated by laser annealing near the exposed area.