LaMgAl11O19:Co2+被动调Q铒玻璃激光器研究

综述了被动调Q铒玻璃激光器的发展概况,推导了被动调Q铒玻璃激光器输出脉冲能量、脉宽的解析表达式,数值模拟了腔内损耗与输出脉冲能量、脉宽及峰值功率的关系以及输出脉冲能量与输入抽运能量的关系.设计了一台LaMgAl11O19:Co2 被动调Q铒玻璃激光器,实验验证了数值模拟分析结果.结果表明,腔内损耗增加将导致输出脉冲能量下降,脉宽变大,从而峰值功率降低.输入能量低于12 J时,输出只有单脉冲,当输入能量大于12 J时,输出会出现双脉冲.在8 J的电输入下,获得了峰值功率50 kW,2.7 mJ的1.535 tm激光输出.最后讨论了提高单脉冲能量的方法.     

LD泵浦Nd∶GdVO4/GaAs被动调Q激光器研究

报道了采用大功率半导体激光器端面泵浦Nd∶GdVO4晶体,利用GaAs晶片兼作饱和吸收被动调Q元件和输出耦合镜,实现了1.06 μm激光的被动调Q运转.在泵浦功率为13.9 W时,获得最高平均输出功率为3.6 W,脉冲宽度为252 ns,单脉冲能量为27 μJ以及峰值功率为107 W的激光脉冲.     

LD连续泵浦Nd:YVO4声光调Q激光器

利用半导体激光器（LD）连续单端泵浦Nd:YVO4晶体,实现了声光调Q输出1 064nm的短脉冲。分析并用实验验证了不同透过率输出耦合镜及不同重复频率条件下,输出调Q脉冲能量、脉冲宽度及平均输出功率的规律。在泵浦功率为20.7W,重复频率为50kHz时,获得了最大平均输出功率为5.72W的脉冲,光 光转换效率为28%,斜效率为32.4%;在重复频率为10kHz时,最大单脉冲能量为0.286mJ,脉宽为22ns,峰值功率为13kW。     

LD泵浦Nd：BGO晶体的自调Q激光器

首次实现了ＬＫ泵浦Ｎｄ∶ＢＧＯ固体激光器的１．０６４μｍ的激光输出，泵浦阈值功率为２５ｍＷ，在连续运转状态下得到最大为４０ｍＷ的ＴＥＭ００模输出，光－光效率为１３．３％，根据法拉第磁光效庆理论，了ＬＤ泵浦Ｎｄ∶ＢＧＯ自调Ｑ激光器的各种参数，并研制成该激光器，在该器件中，作为损耗调制元件的磁光调制器就是绕有线圈的Ｎｄ∶ＢＧＯ晶体本身，实验在重复率为１ＫＨｚ的条件下得到了ＦＷＨＭ为１００ｎｓ的稳定脉冲     

被动调Q自拉曼Nd:GdVO4激光器

对激光二极管(LD)抽运的自拉曼Nd:GdVO4被动调Q激光器进行了详细的理论和实验研究.实验中采用Nd:GdVO4晶体同时作为激光介质和拉曼晶体,分别用了两块不同初始透射率的Cr4 :YAG晶体,得到并比较了采用不同初始透射率的Cr4 :YAG晶体时被动调Q自拉曼激光器的性能.测量了平均输出功率、脉冲宽度和脉冲重复率随抽运功率的变化关系.当Cr4 :YAG的初始透射率为0.91,输入功率是5.7 W时,得到的拉曼光的最高功率为244.6 mW,相应的转换效率为4.3%.通过数值求解基频光和拉曼光空间分布的速率方程并应用到被动调Q自拉曼Nd:GdYO4激光器.获得的理论结果与实验结果大致相符.     

LD泵浦Nd∶LuVO4/Cr4+∶YAG被动调Q激光器

采用大功率半导体激光器端面泵浦Nd∶LuVO4晶体，利用Cr4+∶YAG晶体作为可饱和吸收元件，实现了1.06 μm激光的被动调Q运转.在泵浦功率为19.1 W时，获得最高平均输出功率为4.58 W，脉冲宽度为84 ns，单脉冲能量为36.6 μJ以及峰值功率为436.2 W的激光脉冲.     

Nd:LuYAG混晶1123 nm被动调Q激光器

文章报道了一个二极管激光抽运的1123 nm被动调Q激光器. 激光晶体为混晶Nd:LuYAG, 饱和吸收体选为Cr⁴⁺:YAG晶体. 在连续运转情况下, 最高输出功率为2.77 W, 对应的光-光转换效率为29.53%. 调Q运转时, 在9.38 W吸收抽运功率下, 最高输出功率为0.94 W. 脉冲宽度整体在105 ns左右. 在最高吸收抽运功率下, 1123 nm激光的输出重复频率为9.40 kHz, 对应的单脉冲能量可达100 μJ, 高于目前报道的单晶Nd:YAG 1123 nm单脉冲能量, 证明其在能量存储方面较单晶Nd:YAG更具优势. 另外, 据我们所知, 这是关于混晶Nd:LuYAG 1123 nm输出的首次报道.     

LaMgAl_(11)O_(19)∶Co~(2+)被动调Q铒玻璃激光器研究

综述了被动调Q铒玻璃激光器的发展概况,推导了被动调Q铒玻璃激光器输出脉冲能量、脉宽的解析表达式,数值模拟了腔内损耗与输出脉冲能量、脉宽及峰值功率的关系以及输出脉冲能量与输入抽运能量的关系。设计了一台LaMgAl11O19∶Co2 被动调Q铒玻璃激光器,实验验证了数值模拟分析结果。结果表明,腔内损耗增加将导致输出脉冲能量下降,脉宽变大,从而峰值功率降低。输入能量低于12J时,输出只有单脉冲,当输入能量大于12J时,输出会出现双脉冲。在8J的电输入下,获得了峰值功率50kW,2.7mJ的1.535μm激光输出。最后讨论了提高单脉冲能量的方法。     

双端面LD泵浦双Nd:YVO4晶体激光器声光调Q装置的设计

利用原有"半导体泵浦激光原理"演示实验装置中的各个器件重新组合,设计了激光二极管双端面泵浦双Nd:YVO4晶体激光器声光调Q输出的实验装置.其输出功率可以得到很大的提高.     

LD泵浦Nd∶LuVO_4/Cr~(4 )∶YAG被动调Q激光器

采用大功率半导体激光器端面泵浦Nd∶LuVO4晶体,利用Cr4 ∶YAG晶体作为可饱和吸收元件,实现了1.06μm激光的被动调Q运转.在泵浦功率为19.1W时,获得最高平均输出功率为4.58W,脉冲宽度为84ns,单脉冲能量为36.6μJ以及峰值功率为436.2W的激光脉冲.     

Passively Q-switched Nd:LuVO4 laser using Cr:YAG as saturable absorber

A passively Q-switched all solid-state Nd:LuVO₄ 1.06 μm laser was demonstrated by using Cr⁴⁺:YAG as saturable absorber. The characteristics of average output power, pulse width, repetition rate, pulse energy, and peak power were studied with different output couplings and initial transmission of saturable absorbers. When output coupling with the transmission of 20% was used, the shortest pulse width of 16 ns at the repetition rate of 12.5 kHz was obtained, which results in the pulse energy of 71 μJ and peak power of 4.43 kW with the initial transmission of 70% of Cr⁴⁺:YAG crystal.     

Diode-pumped passively Q-switched intracavity frequency doubled Nd:GdVO4/KTP green laser

A compact diode-pumped passively Q-switched intracavity frequency-doubled Nd:GdVO₄/KTP green-pulse laser was demonstrated, using Cr⁴⁺:YAG as a saturable absorber in a simple flat–flat cavity. With a 5.9 W incident pump power, a passively Q-switched green laser was obtained with an average power of 397 mW, repetition rate of 40 kHz, and pulse width of 40 ns, when the initial transmission of Cr⁴⁺:YAG was 85%. The shortest pulse width of 30 ns, the highest green peak power of 696 W and the maximum pulse energy of 21 μJ were obtained when the initial transmission of Cr⁴⁺:YAG was 70%. Under CW green operation, we obtained 440 mW output power.     

Passively Q-switched Nd:GdVO4 laser with GaAs saturable absorber

A xenon flash-lamp-pumped, passively Q-switched Nd:GdVO₄ laser with GaAs semiconductor saturable absorber is demonstrated. The static laser performance is investigated and the static output is 52 mJ when the pump energy is 9.45 J. The dynamic laser has the highest slope efficiency when the GaAs wafer is both the saturable absorber and output coupler. Pulses with duration of 64 ns and dynamic output of 47.6 mJ are obtained when the pump energy is 9.45 J. The highest dynamic–static ratio is 0.9:1. The coupled rate equations are used to simulate the Q-switched process of laser. The theoretical and experimental results are compared and discussed.     

Nd:YVO4自受激拉曼激光器调Q锁模特性

利用Nd:YVO4激光晶体的自受激拉曼效应,结合Cr:YAG被动锁模技术和倍频技术,实现了结构紧凑的1176 nm和588 nm黄光锁模激光输出。激光器为LD端面泵浦,三镜折叠腔结构,并且采用了透过率为10%的输出镜。Nd:YVO4晶体长度为10 mm,Nd3+离子掺杂质量分数为0.2%,Cr:YAG晶体的初始透过率为67%。10 W激光泵浦时,1176 nm激光平均输出功率为123 mW,调Q包络宽度为6 ns,调Q包络内的锁模脉冲重复频率高达1 GHz。588.2 nm 黄光的平均输出功率为8 mW。     

Efficient fourth harmonic UV generation of passively Q-switched Nd:GdVO4/Cr:YAG lasers

A coherent UV passively Q-switched diode pumped Nd:GdVO₄ laser source is proposed. During pumping of the β-BBO crystal a stable light with power 0.6 W with wavelength 532 nm and pulse duration 9 ns at frequency repetition 16 kHz was applied. The output UV light has a power about 79 mW at wavelength 266 nm during diode-pumping with 8 W incident light.     

Diode-pumped Q-switched Nd:GdVO4/KTP green laser formed with a flat–flat resonator

A diode-pumped acousto-optically Q-switched intracavity frequency-doubled Nd:GdVO₄/KTP green laser formed with a flat–flat resonator was demonstrated. 3.05 W of average green output power at pulse repetition frequency (PRF) of 40 kHz was obtained with an optical conversion efficiency of 18.4%, the effective intracavity frequency-doubling efficiency was 57%. At the incident pump power of 15 W, the shortest laser pulse occurred at PRF of 25 kHz with FWHM width of 14 ns, yielding the highest peak power of 7.44 kW; while the largest pulse energy of 0.14 mJ was achieved at PRF of 15 kHz.     

Nd:YVO4自受激拉曼激光器调Q锁模特性

利用Nd:YVO4激光晶体的自受激拉曼效应,结合Cr:YAG被动锁模技术和倍频技术,实现了结构紧凑的1176 nm和588 nm黄光锁模激光输出。激光器为LD端面泵浦,三镜折叠腔结构,并且采用了透过率为10%的输出镜。Nd:YVO4晶体长度为10 mm,Nd3+离子掺杂质量分数为0.2%,Cr:YAG晶体的初始透过率为67%。10 W激光泵浦时,1176 nm激光平均输出功率为123 mW,调Q包络宽度为6 ns,调Q包络内的锁模脉冲重复频率高达1 GHz。588.2 nm 黄光的平均输出功率为8 mW。     

A diode-pumped passively Q-switched Nd:GdVO4 laser with a GaAs saturable absorption

We have demonstrated a passively Q-switched operation of Nd:GdVO₄ laser in which a GaAs crystal is used as the saturable absorber for the first time as far as we know. A maximum average output power of 1.64 W was obtained at an incident pump power of 12 W, the corresponding optical conversion efficiency and peak power were 13.7% and 116.8 W, respectively. The maximum peak energy obtained in the experiment by 50% transmission couple was 19 μJ.     

GaAs被动调Q Nd:YAG激光器激光特性的研究

报道了用半导体材料 Ga As实现氙灯抽运 Nd:YAG激光器的被动调 Q运转 ,测量了激光器的阈值、脉冲宽度和输出能量。从 Ga As的能级结构出发 ,理论上研究了 Ga As材料的饱和吸收原理 ,建立了调 Q激光器速率方程并给出了数值解 ,对理论结果与实验结果进行了比较和讨论。     

Laser-diode-pumped Passively Q-switched Nd:Sr5(PO4)3F Green Laser

By using a laser-diode as pump source, a Cr4+ :YAG crystal as saturable absorber for passive Q-switch and a KTP as intracavity frequency doubling crystal, we have realized the green Q-switched laser output at 0.5295 μm from a Nd: S-FAP crystal. Output green laser characteristics, such as average power, single pulse energy, pulse width, repetition rate for different small-signal transmission of Cr4+ :YAG and different pump power, were measured. Meanwhile, the coupling rate equations of intracavity frequency doubling with Cr4+ :YAG as passive Q-switch were given and the numerical solution of equations agreed with the experimental results.