共查询到20条相似文献,搜索用时 15 毫秒
1.
Stress Power Dependent Self-Heating Degradation of Metal-Induced Laterally Crystallized n-Type Polycrystalline Silicon Thin-Film Transistors 总被引:2,自引:0,他引:2
Hsing-Huang Tseng Tobin P.J. Kalpat S. Schaeffer J.K. Ramon M.E. Fonseca L.R.C. Jiang Z.X. Hegde R.I. Triyoso D.H. Semavedam S. 《Electron Devices, IEEE Transactions on》2007,54(12):3276-3284
Using a fluorinated high-k/metal gate stack combined with a stress relieved preoxide (SRPO) pretreatment before high-k deposition, we show significant device reliability and performance improvements. This is a critical result since threshold voltage instability may be a fundamental problem, and performance degradation for high-fc is a concern. The novel fluorinated TainfinCy/HfZrOinfin/SRPO gate stack device exceeds the positive-bias-temperature-instability and negative-bias-temperature-instability targets with sufficient margin and has electron mobility at 1 MV/cm comparable to the industrial high-quality polySi/SiON device on bulk silicon. 相似文献
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《Electron Devices, IEEE Transactions on》2009,56(4):587-594
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使用金属镍诱导非晶硅晶化(MIC:metal-induced crystallization)技术,获得了低温(<550℃)多晶硅.通常在镍覆盖区以外的晶化硅更加有用,这一技术被称为金属诱导横向晶化(MILC:metal-induced lateral crystallization)技术.通过对结晶动力学过程和材料特性的研究,提出了可同时适用于镍覆盖区和相连非覆盖区金属诱导结晶的同一晶化机制.虽然MILC多晶硅的材料特性明显优于固相晶化多晶硅的材料特性,薄膜晶体管沟道中存在MIC/MILC 的界面所形成的横向晶界会明显的降低其性能.若将这些界面从沟道中去除掉,即可获得可满足液晶和有机发光二极管等显示器进行系统集成所需的高性能器件. 相似文献
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Negative Bias Temperature Instability in Low-Temperature Polycrystalline Silicon Thin-Film Transistors 总被引:1,自引:0,他引:1
Chih-Yang Chen Jam-Wem Lee Shen-De Wang Ming-Shan Shieh Po-Hao Lee Wei-Cheng Chen Hsiao-Yi Lin Kuan-Lin Yeh Tan-Fu Lei 《Electron Devices, IEEE Transactions on》2006,53(12):2993-3000
The authors have proved that negative bias temperature instability (NBTI) is an important reliability issue in low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs). The measurements revealed that the threshold-voltage shift is highly correlated to the generation of grain-boundary trap states. Both these two physical quantities follow almost the same power law dependence on the stress time; that is, the same exponential dependence on the stress voltage and the reciprocal of the ambient temperature. In addition, the threshold-voltage shift is closely associated with the subthreshold-swing degradation, which originates from dangling bond formation. By expanding the model proposed for bulk-Si MOSFETs, a new model to explain the NBTI-degradation mechanism for LTPS TFTs is introduced 相似文献
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Nam-Kyu Song Min-Sun Kim Shin-Hee Han Young-Su Kim Seung-Ki Joo 《Electron Devices, IEEE Transactions on》2007,54(6):1420-1424
It has been known that adjacent Pd enhances the crystallization rate in Ni metal-induced lateral crystallization (Ni-MILC) and this knowledge has been used to fabricate the unidirectional MILC thin-film transistors (TFTs), which eliminate the boundary formed at the center of TFT channel in a normal MILC TFTs. It is discovered that the MILC/MILC boundary (MMB) is responsible for the high leakage current and low field- effect mobility. The electrical properties of unidirectional MILC TFTs (Width/Length = 10/10 mum) improved considerably comparing to those of MILC TFTs containing the MMB. The leakage current and field-effect mobility, which have been regarded as obstacles for industrialization of the MILC process, measure to be 2.1 X 10-11 A and 83 cm2/ V ldr s, respectively. 相似文献
7.
Chen C.-Y. Lee J.-W. Chen W.-C. Lin H.-Y. Yeh K.-L. Lee P.-H. Wang S.-D. Lei T.-F. 《Electron Device Letters, IEEE》2006,27(11):893-895
In this letter, a mechanism that will make negative bias temperature instability (NBTI) be accelerated by plasma damage in low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) is presented. The experimental results confirm that the mechanism, traditionally found in the thin gate-oxide devices, does exist also in LTPS TFTs. That is, when performing the NBTI measurement, the LTPS TFTs with a larger antenna ratio will have a higher degree in degradation of the threshold voltage, effective mobility, and drive current under NBTI stress. By extracting the related device parameters, it was demonstrated that the enhancement is mainly attributed to the plasma-damage-modulated creating of interfacial states, grain boundary trap states, and fixed oxide charges. It could be concluded that plasma damage will speed up the NBTI and should be avoided for the LTPS TFT circuitry design 相似文献
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Chih-Yang Chen Ming-Wen Ma Wei-Cheng Chen Hsiao-Yi Lin Kuan-Lin Yeh Shen-De Wang Tan-Fu Lei 《Electron Device Letters, IEEE》2008,29(2):165-167
Negative bias temperature instability (NBTI) degradation mechanism in body-tied low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) is analyzed by the charge-pumping (CP) technique. The properties of bulk trap states (including interface and grain boundary trap states) are directly characterized from the CP current. The increase of the fixed oxide charges is also extracted, which has not been quantified in previous studies of NBTI degradation in LTPS TFTs. The experimental results confirm that the NBTI degradation in LTPS TFTs is caused by the generation of bulk trap states and oxide trap states. 相似文献
9.
Won-Kyu Lee Joong-Hyun Park Joonhoo Choi Min-Koo Han 《Electron Device Letters, IEEE》2008,29(2):174-176
We fabricated a new top-gate n-type depletion-mode polycrystalline silicon (poly-Si) thin-film transistor (TFT) employing alternating magnetic-field-enhanced rapid thermal annealing. An n+ amorphous silicon (n+ a-Si) layer was deposited to improve the contact resistance between the active Si and source/drain (S/D) metal. The proposed process was almost compatible with the widely used hydrogenated amorphous silicon (a-Si:H) TFT fabrication process. This new process offers better uniformity when compared to the conventional laser-crystallized poly-Si TFT process, because it involves nonlaser crystallization. The poly-Si TFT exhibited a threshold voltage (VTH) of -7.99 V at a drain bias of 0.1 V, a field-effect mobility of 7.14 cm2/V ldr s, a subthreshold swing (S) of 0.68 V/dec, and an ON/OFF current ratio of 107. The diffused phosphorous ions (P+ ions) in the channel reduced the VTH and increased the S value. 相似文献
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《Electron Device Letters, IEEE》2008,29(12):1332-1335
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《Electron Device Letters, IEEE》2007,28(5):392-394
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The dynamic negative bias temperature instability (NBTI) on low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) was investigated in detail. Experimental results revealed the threshold voltage shift of LTPS TFTs after the NBTI stress decreases with increasing frequency, which is different from the frequency-independence of conventional CMOSFET. Under a low frequency stress, the capacitance-voltage measurement with various frequencies implied that a larger quantity of inversion holes was trapped in the grain boundary. Thus, the difference of the transit time between the grain boundary and interface dominates the LTPS TFTs dynamic NBTI behaviors and results in the dependence of frequency. 相似文献
13.
Hatzopoulos A.T. Arpatzanis N.. Tassis D.H. Dimitriadis C.A. Templier F.. Oudwan M.. Kamarinos G.. 《Electron Device Letters, IEEE》2007,28(9):803-805
Bottom-gated n-channel thin-film transistors (TFTs) were fabricated using hydrogenated amorphous-silicon (a-Si:H)/ nanocrystalline silicon (nc-Si:H) bilayers as channel materials, which are deposited by plasma-enhanced chemical vapor deposition at low temperatures. The stability of these devices is investigated under static and dynamic bias stress conditions. For comparison, the stability of a-Si:H and nc-Si:H single-layer TFTs is investigated under similar bias stress conditions. The overall results demonstrate that the a-Si:H/nc-Si:H bilayer TFTs are superior compared with their counterparts of a-Si:H and nc-Si:H TFTs regarding device performance and stability. 相似文献
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Ming-Wen Ma Tien-Sheng Chao Chun-Jung Su Woei-Cherng Wu Kuo-Hsing Kao Tan-Fu Lei 《Electron Device Letters, IEEE》2008,29(6):592-594
In this letter, high-performance low-temperature poly-Si p-channel thin-film transistor with metal-induced lateral- crystallization (MILC) channel layer and TaN/HfO2 gate stack is demonstrated for the first time. The devices of low threshold voltage VTH ~ 0.095 V, excellent subthreshold swing S.S. ~83 mV/dec, and high field-effect mobility muFE ~ 240 cm2/V ldr s are achieved without any defect passivation methods. These significant improvements are due to the MILC channel film and the very high gate-capacitance density provided by HfO2 gate dielectric with the effective oxide thickness of 5.12 nm. 相似文献
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《Electron Device Letters, IEEE》2008,29(11):1222-1225
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《Electron Device Letters, IEEE》2009,30(1):33-35
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以非晶硅为晶化前驱物,采用镍盐溶液浸沾的方法可以得到超大尺寸碟型晶畴结构的低温多晶硅薄膜.所得多晶硅薄膜的平均晶畴尺寸大约为50 μm,空穴的最高霍尔迁移率为30.8 cm~2/V·s,电子的最高霍尔迁移率为45.6 cm~2/V·s.用这种多晶硅薄膜为有源层,所得多晶硅TFT的场效应迁移率典型值为70~80 cm~2 /V·s,亚阈值斜摆幅为1.5 V/decade,开关电流比为1.01×10~7,开启电压为-8.3 V.另外,P型的TFT在高栅偏压和热载流子偏压下具有良好的器件稳定性. 相似文献
20.
Thermal Degradation Under Pulse Operation in Low-Temperature p-Channel Poly-Si Thin-Film Transistors
Shinichiro Hashimoto Koji Kitajima Yukiharu Uraoka Takashi Fuyuki Yukihiro Morita 《Electron Devices, IEEE Transactions on》2007,54(2):297-300
We analyzed the heat generation of a low-temperature polycrystalline thin-film transistor in pulse operation and proposed a technique for accurately measuring its thermal temperature in high-frequency operation. From this measurement, we were able to calculate the time constants for heating and radiation for the first time. At a low frequency, the temperature difference between when the pulse was on and off was remarkable. As the frequency was increased, the maximum and minimum temperatures approached each other and became equal at a frequency of approximately 1 kHz. We also measured the degradation in pulse operation and discussed the relationship between the thermal temperature and the degradation in the pulse operation 相似文献