Infrared multiple-photon dissociation of CDCl3 induced by a TEA CO2 laser

Infrared multiple-photon dissociation (IRMPD) of CDCl₃ was studied using a tunable TEA CO₂ laser. Effects of number of irradiation pulses, wavelength and energy fluence as well as of sample pressure on the reaction yield are reported.     

Effect of rotational relaxation on the yield of the multiphoton dissociation of CF3Cl and CF3Br under TEA-CO2 laser pulses

The yield of the multiphoton dissociation of CF₃Cl and CF₃Br induced by TEA-CO₂ laser pulses has been studied in the pressure range between 0.25 and 8 Torr, the laser wavelength being chosen so as to excite preferentially the minor isotopic components¹³CF₃Cl and¹³CF₃Br. For both compounds the dissociation probability is found either to increase almost linearly or to decrease monotonously with gas pressure, according as the laser beam is focused or unfocused, respectively. This behaviour is explained by rotational relaxation effects, and a value of 22ns·Torr for the rotational self-relaxation time of CF₃Cl is obtained.     

Frequency and time resolved luminescence of intermediate reaction products in ir laser decomposition of silane

A systematic study of spectral and time dependence of the luminescence emitted by fragments after ir multiple-photon decomposition of silane, is presented. Data obtained at various silane pressure (1–35 Torr) and pulsed CO₂ laser fluences are discussed and compared with previous results and interpretations.     

13C-selective infrared multiple-photon decomposition study of CBrClF2

The infrared multiple-photon single-frequency decomposition (IRMPD) of CBrClF₂ was examined as functions of laser wavenumber, laser fluence, and partial pressure of CBrClF₂. The initial step was the scission of a C-Br bond. In the presence of O₂ the carbon-containing product was CF₂O and its subsequent hydrolysis gave CO₂. The initial dissociation was highly ¹³C selective at wavenumbers below 1014 cm^–1. CBrClF₂ decomposed at relatively low fluences as compared to CHClF₂. However, the decomposition yield rapidly decreased with increasing pressure. In the large-scale irradiation experiment using about 8 J pulse at 1 Hz, we obtained a carbon yield of 0.41 mol per pulse at a ¹³C-atom fraction of 17% for a mixture of 10 Torr CBrClF₂ and 10 Torr O₂, and a carbon yield of 0.17 mol per pulse at a fraction of 29% for a mixture of 20 Torr CBrClF₂ and 20 Torr O₂. The IRMPD of CHClF₂ gave a carbon yield of 0.18 mol per pulse at 48% for 10 Torr neat CHClF₂ and yield of 0.25 mol at 52% for 20 Torr CHClF₂. The large-scale irradiation experiment was also carried out for mixtures of CBr₂F₂ and O₂. CHClF₂ is the most productive of ¹³C.     

Chemical etching of silicon by CO2-laser-induced dissociation of NF3

The pulsed infrared laser dissociation of NF₃ is reported for the first time, and is used to investigate silicon etching. The role played by collision-enhanced multiple-photon absorption and dissociation is considered, with data on the nonlinear decrease of the absorption cross-section with increasing pulse energy and increasing pressure presented. Using an experimental arrangement in which the laser beam is focussed parallel to the surface, the dissociation process induces spontaneous etching of silicon. Fluorinecontaining radicals diffuse from the focal volume to the surface where a heterogeneous chemical reaction occurs. Etching was monitored by use of a quartz-crystal microbalance upon which a thin film of amorphous silicon was deposited. For a surface with no previous exposure to the photolysis products, dissociation causes the formation of a surface layer prior to the onset of etching. X-ray photoelectron spectroscopy demonstrates this to be a fluorosilyl layer possessing a significant concentration of SiF₃ and SiF₄. In contrast, a surface already thickly fluorinated does not form a thicker layer once laser pulsing commences again. In this case, etching starts immediately with the first pulse. The etch yield dependencies on several parameters were obtained using silicon samples possessing a thick fluorosilyl surface layer. These parameters are NF₃ pressure, laser wavenumber, pulse energy, buffer gas pressure, and perpendicular distance from focal volume to surface. Modeling of the etch yield variation with perpendicular distance shows the time-integrated flux of radicals impinging on the surface to be inversely proportional to the distance. Attempts at etching SiO₂ under identical conditions were unsuccessful despite the evidence that thin native oxide films are removed during silicon etching.     

Missing fractions in heavy gases: Xe and CCl4?

The spin polarization of positive muons thermalized in Xe has been measured as a function of pressure up to 4660 Torr (6.1 atm) by the muon spin rotation (MSR) technique. At 4660 Torr, triplet muonium (F=1, M=1) accounts for about 40% of the initial muon polarization and no significant signal from diamagnetic muons has been observed. The unexpectedly slow recovery of the polarization in Xe at high pressures is discussed in conjunction with similar results seen in CCl₄ and CHCl₃ vapors.     

Effect of gas pressure and pulse length on the isotopically selective multiphoton dissociation of CF3Cl under CO2 laser pulses

The multiphoton dissociation of CF₃Cl induced by TEA-CO₂ laser pulses has been studied in a focused beam geometry. TheR(10) [00°1–02°0] ( ) laser line was used, so as to dissociate preferentially the minor isotopic component¹³CF₃Cl. The isotopic selectivityS and the dissociation probability per pulse ω were measured in the pressure range between 0.25 and 8 Torr. With short laser pulses (90 ns FWHM),S is found to increase slightly with gas pressure up to 2 Torr, and ω, to increase almost linearly over the whole pressure range studied. A schematic model is proposed which satisfactorily explains these results if the transition rates across the energy level spectrum of the CF₃Cl molecules are assumed to increase with gas pressure.     

Selectivity enhancement in tritium isotope separation by multiple frequency multiple photon dissociation of the CTF3/CHF3 System

Isotope separation of tritium by multiple photon dissociation process in multiple frequency fields of a TEA-CO₂ laser is reported for the first time. A ten-fold improvement in the bulk selectivity was obtained in 8.5 Torr CTF₃/CHF₃ in the presence of buffer gas at room temperature using 9R(8) to 9R(14) CO₂ laser lines compared to single frequency excitation. Investigations of various process parameters such as exciting laser frequencies, pulse energy, sample and buffer gas pressure indicate that this is a promising technique for the separation of tritium.     

X-ray preionized CO2 laser

A short pulse (100 ns) high-energy x-ray source has been used to preionize a transversely excited carbon dioxide gas discharge laser of 600 cm³ active volume. The maximum output power of 60 MW in a 50 ns FWHM pulse was achieved from a CO₂–N₂–He–CO–Xe static gas mixture at 600 Torr pressure. The energy conversion efficiency was 6%.     

Fluence and wavelength dependence of the IRMPA and IRMPD of CDCl3 with a CO2 laser

A TEA CO₂ laser was used to study the infrared multiple-photon absorption (IRMPA) and dissociation (IRMPD) spectra of CDCl₃ in the fluence ranges 0.01–1.4 and 7–45 J/cm², respectively, for different sample pressures. Experimental results were modeled with a master equation formulation which includes rotational and anharmonic bottlenecks and collisional effects. Experimental and calculated results show that CDCl₃ has great rotational and anharmonic restrictions at the first stages of excitation. The IRMPD spectrum falls more slowly than the linear absorption spectrum at the blue wing due to intramolecular vibrational relaxation at the quasi-continuum level of excitation.     

Tritium isotope separation by CO2-laser irradiation at low temperatures

Tritium isotope separation by CO₂-laser induced multiphoton dissociation of CTF₃ is investigated. For the optimization of the performance of this working substance, trifluoromethane, the conditions to yield high-selectivity at high-operating pressure and low-critical fluence for complete dissociation are studied using our deconvolution procedure. The irradiation conditions are varied over the following ranges; wavenumber: 1052–1087 cm^–1, gas temperature: 25°C to –78°C, CHF₃ pressure: 5–205 Torr. The selectivities exceeding 10⁴ are observed for 85–205 Torr CHF₃ at –78°C by the irradiation at 1057 cm^–1.     

Selective ir laser chemistry of CDF3 in natural fluoroform

Selective decomposition of CDF₃ at natural abundance level (150ppm) in fluoroform has been achieved by infra-red multiple-photon excitation at moderate substrate pressure using 100 ns FWHM CO₂ laser pulses. Effects of energy fluence, number of laser pulses, buffer gas pressure and substrate pressure on decomposition yield and bulk selectivity are reported and discussed.     

T/D isotope selectivity in CO2 laser induced multiple-frequency multiphoton dissociation of trifluoromethane-T

Isotope-selective multiphoton dissociation of CTF₃ in the presence of CDF₃ by TEA CO₂ laser is studied. The highest T/D selectivity of 58 was observed at a sample pressure of 2 Torr in the presence of 20 Torr of argon on excitation by the 9P(24) CO₂ laser line. The effect of multiple-frequency irradiation on selectivity is studied in the P and Q branches of the v ₂ absorption band of CTF₃. No improvement in the selectivity is noticed on going from single- to multiple-frequency irradiation. These results are compared with previous multiple-frequency work on the CTF₃/CHF₃ system, and explained in terms of strong spectroscopic interference from ¹³CDF₃ in the present case.     

Efficiency of the barrier-discharge UV Xe: SF6 lamp

The efficiency of the barrier-discharge UV lamp filled with a Xe/SF₆ = 50: 1 mixture is studied as a function of the pressure in the mixture (ranging from 40 to 180 Torr) and electrode distance (3–11 mm). It is shown that, if the product pd is constant, the power of the discharge and the intensity of the UV radiation (354 nm) decrease with increasing pressure and shrinking the electrode gap. The maximal efficiency of the lamp (6–8%) is reached in the pressure range 30–50 Torr.     

CO2 dissociation on rhodium: Measurement of the specific rates on Rh(111)

The measured rates for CO₂ dissociation on Rh(111) are reported for a $\text{H}{}_2\text{CO}{}_2$ reaction mixture at a total pressure of 100 Torr and a CO₂ partial pressure of 1 Torr. The activation energy associated with the conversion of CO₂ to CO is $\text{17}\text{kcal}\text{mol}$. The reaction probabilities for CO₂ dissociation range from 10^?5 at 750 K to 10^?8 at 444 K. The probability of CO₂ dissociation on Rh(111) is shown to be on the order of 10^?11 at 300 K rather than the previously reported value near 10^?1.     

Disorientation and disalignment cross sections of excited Rb-atoms colliding with noble gases

The disorientation and disalignment cross sections for the depolarization of Rb 5²P_1/2 and 5²P_3/2 states due to collisions with the inert gases He, Ne, Ar, Kr, Xe were measured at a temperature of 317 K. The experiments were done in a static magnetic field H₀ which served to decouple the nuclear spin. Unpolarized Rb-D₂-radiation was made incident on the Rb-vapour parallel to H₀ thus generating an alignment in the²P_3/2-state. The linear polarization of the fluorescent D₂-light emitted at right angles towards the incident light beam was measured as a function of the rare gas pressure (0... 3 Torr). Similarly, for the disorientation measurements the vapour was excited by circularly polarized D₂- or D₁-radiation parallel to H₀ and circularly polarized fluorescent light was observed at small angles towards the backward direction. From the decrease of the polarizations observed at rising pressure the cross sections were determined. The comparison with theoretical results gives satisfactory agreement.     

The mechanism of amine formation on Si(1 0 0) activated with chlorine atoms

The dissociation of NH₃ on a Si(1 0 0) surface activated with Cl atoms was investigated using X-ray photoelectron spectroscopy. Gas phase UV-Cl₂ (0.1-10 Torr Cl₂ for 10-600 s under 1000 W Xe lamp illumination) completely replaced the H-termination on aqueous-cleaned Si(1 0 0) with 0.82 ± 0.06 ML of Cl at 298 K. A single spin-orbit split Cl 2p doublet indicated that the Cl atoms were bound to Si dimer atoms, forming silicon monochloride (Cl-Si-Si-Cl). Exposing the Cl-terminated surface at 348 K to NH₃ (1-1000 Torr for 5-60 min) replaced one Cl atom with one N atom up to a coverage of 0.33 ± 0.02 ML. Cl atoms lowered the activation energy barrier for reaction to form a primary amine (Si-NH₂). Oxygen was coadsorbed due to competition by H₂O contamination. The presence of Cl on the surface even after high NH₃ exposures is attributed to site blocking and electrostatic interactions among neighboring Cl-Si-Si-NH₂ moieties. The results demonstrate a low temperature reaction pathway for depositing N-bearing molecules on Si surfaces.     

Carbon-13 enrichment by IR laser chemistry of CHF3-Cl2

IR laser chemistry of CHF₃ is investigated in both neat form and in the presence of Cl₂ for carbon-13 enrichment. Infrared multiple-photon dissociation of CHF₃ is an order of magnitude more efficient in the scavenged system compared to the neat case. The photolysis of CHF₃/Cl₂ mixture results in two products, viz., CF₂Cl₂ and C₂F₄Cl₂ but with different enrichment factors. The parametric studies show that C₂F₄Cl₂ arises due to MPD of CF₂Cl₂ in secondary photolysis.     

Electron beam interactions with CO on W {100} studied by Auger electron spectroscopy

The interaction of 2500 eV electrons with carbon monoxide chemisorbed on tungsten {100} was investigated by rapid-scan Auger electron spectroscopy. When no α state was present the O and C signals from the β state of CO were invariant during electron bombardment, giving an upper limit estimate for the electron stimulated desorption cross section, Q_β of 2 × 10^?21 cm². With the crystal at room temperature and saturated with CO, however, electron-beam induced accumulation of carbon was observed and characterised, the rate of the process being independent of CO pressure at pressures above 2 × 10^?8 Torr. At 450 K the rate was found to be pressure dependent up to at least 6 × 10^?7 Torr. A model is proposed for the accumulation process, which is based on electron beam dissociation of α₂-CO to form adsorbed carbon and gaseous O and the creation of new sites for further α₂-CO adsorption; it is in quantitative agreement with the results and yields a cross section for ESD of α₂-CO (Q_α2 = 1.55×10^?18cm²) in close agreement with direct measurements.     

Separation of tritium from deuterium by pulsed NH3 laser-selective multiple photon dissociation of CTCl3

The multiple photon dissociation of ppm level CTCl₃ in CDCl₃ and the selectivity of T/D separation were investigated using a pulsed ammonia laser. The effect of laser frequency, fluence and buffer gas pressure on the dissociation rate and isotopic selectivity were studied. The depletion of CDCl₃ was not observed within experimental errors. A lower limit of single step selectivity factor was found to be >5000 at 133 Pa substrate pressure.