Preparation of p—n Junction Diode by B—Doped Diamond Film Grown on Si—Doped c—BN

A heterojunction diode has been fabricated by boron-doped p-type diamond thin film grown epitaxially on a silicon-doped n-type cubic boron nitride bulk crystal using the conventional hot filament chemical vapour deposition method.The ohmic electrode of Ti(50nm)/Mo(100nm)/Au(300nm)for the p-type diamond film and the bulk crystal of the c-BN were deposited by the rf planar magnetron method.Then the device was annealed at 410℃ in air for 1h in order to form ohmic metal alloy,The current-voltage characteristics of the heterojunction diode were measured and the result indicated that the rectification ratio reached 10^5,and the turn-on voltage and the highest current were 7V and 0.36mA,respectively.     

Dielectric Characterization of Free—Standing Diamond Films

The dielectric properties of free-standing diamond films grown by the dc arc-jet plasma method are measured by an impedance analyser in the temperature range of 298-573K and at frequencies between 1000Hz and 1MHz.In the temperature and frequency ranges,the loss tangent can be expressed as a function of temperature and frequency.The loss tangent increases slightly with increasing temperature and frequency,The dielectric properties of the diamond films decrease with the increasing deposited temperature.The structure and quality of diamond films have been analysed by scanning electron microscopy,x-ray diffraction and raman spectroscopy.     

Growth and Optical Properties of Double Heterostructure GaN／InGaN／GaN Films with Large Composition

The double heterostructure GaN/InGaN/GaN films with different thicknesses of the InGaN layer were grown at 780℃ or 800℃ by metal-organic chemical vapour deposition.The samples were investigated using x-ray diffraction (XRD),room-temperature photoluminescence (PL) and Raman scattering.The dependences of the samples on both the growth temperature and the thickness of the InGaN layer were studied.The composition of InGaN was determined by the results of XRD,and the bowing parameter of InGaN was calculated in terms of the PL spectra.When the thickness of the InGaN layer was reduced,the phase separation of InGaN was found in some samples.The raman frequency of the A1(LO) and E2(low) modes in all the samples shifted and did not agree with Vegard‘s law.     

Preparation and Characterization of Hybrid ZnO/Ormosils Films

Hybrid ZnO/ormosils films are prepared by the sol-gel method. A FT-IR spectrometer, 900 UV/VIS/NIR spectrophotometer, atomic force microscope, and ellipsometer are employed to investigate microstructure and optical properties of the films fired at different temperatures. The results show that the films with high transmittance and low surface roughness could be obtained at the heat-treatment temperature of 150℃, the refractive index and thickness of the film are 1.413, 2.11μm, respectively. Higher temperatures （350℃, 550℃） change the film microstructure severely, and then decrease the transmittance of the films,     

Preparation and Dielectric Properties of Nanostructured ZnO Whiskers

By a novel controlled combustion synthesis method, a large number of nanostructured ZnO whiskers with different morphologies, such as tetra-needles, long-leg tetra-needles and multi-needles, are prepared without any additive in open air at high temperature. The morphologies and crystalline structures of the as-prepared ZnO nanostructured whiskers are investigated by SEM and XRD. The possible growth mechanism on the nanostructured ZnO whiskers is proposed. The experimental results indicate that the dielectric constants and losses of the nanostructured ZnO whiskers are very low, demonstrating that the nanostructured ZnO whiskers are low-loss materials for microwave absorption in X-band. However, obvious microwave absorption in nanostructured ZnO whiskers is observed. The quasi-microantenna model may be attributed to the microwave absorption of the ZnO whiskers.     

Comparative Study of Properties of ZnO／GaN／Al203 and ZnO／Al203 Films Grown by Low－Pressure Metal Organic Chemical Vapour Deposition

ZnO films were deposited by low-pressure metal organic chemical vapour deposition on epi-GaN/Al203 films and c-Al203 substrates. The structure and optical properties of the ZnO/GaN/Al203 and ZnO/Al203 films have been investigated to determine the differences between the two substrates. ZnO films on GaN/Al203 show very strong emission features associated with exciton transitions, just as ZnO films on Al2O3, while the crystalline structural qualities for ZnO films on GaN/Al2O3 are much better than those for ZnO films directly grown on Al203 substrates. Zn and O elements in the deposited ZnO/GaN/Al2O3 and ZnO/Al2O3 films are investigated and compared by x-ray photoelectron spectroscopy. According to the statistical results, the Zn/O ratio changes from Zn-rich for ZnO/Al2O3 films to O-rich for ZnO/GaN/Al2O3 films.     

Colossal Magnetoresistive p—n Junctions of Te—Doped LaMnO3／Nb—doped SrTiO3

We have fabricated colossal magnetoresistive (CMR) p-n unctions made of Te-doped LaMnO3 and Nb_dopoed SrTiO3 with laser molecular beam epitaxy.The I-V characteristics of the La 0.9Te0.1MnO3/SrNb 0.01Ti0.99O3p-n junctions as a function of applied magnetic field(0-5T) wrer experimentally studied in the temperature range 77-300K.The results indicate that the p-n junction exhibited the CMR behaviour.The magnetoresistance (MR) is positive at 220K and 300K,while it displays a negative MR at 77K.For a positive bias.the MR ratios (ΔR/R0,ΔR=RH-R0)are 7.5% at 0.1T and 18% at 5T for 300K,5%at 0.1T and 33%at 5T for 220K,for 300K,5.1%at 0.1T and 15%at 3T for 220K-19%at 0.1T and -72% at 5T for 77K,The CMR behaviour of the p-n junction is different from those of the LaMnO3 compound family.     

Preparation of Highly Squeezed States and Multi—component Entangled Coherent States via the Raman Interaction

A method is presented for generating highly squeezed states of a cavity field via the atom-cavity field interaction of the Raman type.In the scheme a sequence of three-level Λ-type atoms interacts with a cavity field,displaced by a classical source,in a Raman manner.Then the atomic states are measured.By this way the cavity field may collapse onto a superposition of several coherent states,which exhibits strong squeezing.The scheme can also be used to prepare superpositions of many two-mode coherent states for two cavity fields.The coherent states in each mode are on a straight line.This is the first way for preparing multi-component entangled coherent states of this type in cavity QED.     

Electroluminescence and Photoluminescence from Scored Si—Rich SiO2 Film／p—Si Structure

Electroluminescence(EL)is observed from the Au/Si-rich SiO2 film/p-Si diodes,in which the Si-rich SiO2 films are scroed deliberately by a diamond tip.The EL intensity of the scroed diode annelaed at 800℃ is about 6 times of that of the unscored counterpart,The EL sectrum of the usscored diode could be decomposed into two Gaussian luminescence bands with peaks at about 1.83 and 2.23eV,while for the EL spectrum of the scored diode,an additional Gaussian band at about 3.0eV appears,and the 1.83-eV peak increases significantly in intensity,The photoluminescence(PL) spectrum of an unscored Si-rich SiO2 film has only one band peaking at about 1.48eV,whereas the Pl spectrum of the scored one has two bands at about 1.48 and 1.97eV.We consider that the high-density defect regions produced by the scoring provide new luminescence centres and become some types of nonradiative centres in the Si oxide layer,which thus result in changes of the EL and PL spectra.     

Bulk-Quantity Synthesis and Conductive Properties of Comb-Like Dendritic ZnO Nanostructures

Adopting a simple low-temperature (-500℃) vapour process, we have synthesized bulk quantity comb-like dendritic ZnO nanostructures in large area. An atomic force microscope equipped with Au-coated probes was employed to elucidate the current-voltage characteristic of the individual ZnO nanocomb. The connection electrodes were defined by depositing Pt wires using focused ion beam (FIB). A rectification effect was observed,while it was slightly suppressed compared with that of the previous reports. The good conductive properties of the sample can be attributed to the Ga ions implantation through the FIB process of electrode definition. We suggest that the material and the FIB method can be developed to fabricate novel nanosized devices.     

Effect of Metallic Film in Diamond Growth from an Fe—Ni—C System at High Temperature and High Pressure

The metallic film surrounding a diamond single crystal,which plays an important role the diamond growth from and Fe-Ni-C system,has been successfully investigated by using transmission-electron microscopy(TEM),Raman layer(near diamond)of the film by TEM and Raman spectroscopy,but a parallel relationship exists between the(111) plane of γ-(Fe,Ni) and the (100) plane of (Fe2Ni)3C in this region.Compared with that of the film has an increase of 0.9V.According to the microstructures on the film obtained by the TEM.Raman spectra,and XPS,the catalytic mechanism of the film may be assumed as follows.In the surface layer of the film,iron and nickel atoms in the γ-(Fe,Ni) lattice can absorb carbon atoms in the (Fe,Ni)3C lattice and make them transform to an sp^3-like state.Then carbon atoms with the sp^3-like structure are separated from the (Fe,Ni)3C and stack on the growing diamond crystal.This study provides a direct evidence for the diamond growth from a metallic catlayst-graphite system under high temperature and high pressure.     

Characteristics of p-type ZnO:As thin films prepared by the ampoule-tube method and ZnO p–n homojunction

A p-type ZnO thin film was prepared using arsenic diffusion via the ampoule-tube method. This was followed by fabrication of a ZnO p–n homojunction using n-type ZnO and characterization of the device properties. The ZnO thin film exhibited p-type characteristics, with a resistivity of 2.19×10⁻³ Ω cm, a carrier concentration of 1.73×10²⁰/cm³, and a mobility of 26.7 cm²/V s. Secondary ion mass spectrometer analysis confirmed that in- and out-diffusion occurred simultaneously from the external As source and the GaAs substrate. The device exhibited the rectification characteristics of a typical p–n junction; the forward voltage at 20 mA was approximately 5.5 V. The reverse-bias leakage current was very low—0.1 mA for −10 V; the breakdown voltage was −11 V. The ampoule-tube method for fabricating p-type ZnO thin films may be useful in producing ultraviolet ZnO LEDs and other ZnO-based devices.     

Preparation of Diamond—Like carbon Films in methane by Electron Cyclotron Resonance Microwave Plasma Source Ion Implantation

Diamond-like carbon(DLC)films were prepared on Si(100) substrates by ion implantation from an electron cyclotron resonance microwave plasma source.During the implantation,650W microwave power was used to produce discharge plasma with methane as working gas,and-20KV voltage pulses were applied to the substrate holder to accelerate ions in the plasma.Confocal Raman spectra confirmed the DLC characteristics of the films.Fourier-transform infrared characterization indicates that the DLC films were composed of sp^3 and sp^2 carbonbonded hydrogen.The hardness of the films was evaluated with a Nano Indenter-XP System.The result shows that the highest hardness valus was 14.6 GPa.The surface rms roughness of the films was as low as 0.104nm measured with an atomic force microscope.The friction coeffcient of the films was checked using a ball-on-disk microtribometer.The average friction coefficient is approximately 0.122.     

Influences of Annealing on the Opto—electronic Properties of ZnO Films Grown by Plasma—Enhanced MOCVD

ZnO thin films have been grown on C-plane sapphire substrates by plasma-enhanced metal-organic chemical vapour deposition.The samples are then annealed at a higher temperature.The resistivity,concentration of electron,mobility and optically pumped threshold of both as-grown and annealed films are investigated.Furthermore,their structural and optical properties are also examined with x-ray diffraction,emission spectra and optical transmission spectra.The results indicate that the quality of ZnO thin films can be improved by annealing.     

Preparation and Optical Properties of SnO2／SiO2 Nanocomposite

SnO2/SiO2 nanocomposites have been prepared by the soaking-thermal-decomposing method, tin oxide nanoparticles are uniformly dispersed in the mesopores of silica. The optical absorption edge of the obtained nanocomposite presents a redshift compared with bulk tin oxide, With the increasing annealing temperature during the procedure of the sample preparation, the optical absorption edge of the sample moves to shorter wavelength (blueshift). These optical properties can be ascribed to the amorphous structure and band defects of surface layers of the tin oxide nanoparticles.