脉冲激光引起铜膜镜面的环形损伤波纹研究

 用波长1.06μm、半高宽10ns的脉冲Nd:YAG激光辐照铜膜镜面，在激光辐照区，用光学显微镜观察到有规律的环形波纹状损伤图案，波纹平均周期约几十μm。通过对光路系统分析，认为样品前的小孔光阑对激光产生了菲涅尔衍射，使得在样品表面光强分布变成周期性环状分布。在极短的相互作用时间内，热扩散很小，损伤图案依赖于光强分布。并依据实验参数，用柯林斯公式对样品表面的光强分布进行了计算，所得光强分布的周期与损伤波纹的周期基本一致。     

KrF-excimer-laser-induced native oxide removal from Si (100) surfaces studied by Auger electron spectroscopy

The mechanism of KrF-excimer-laser cleaning of Si(100) surfaces was studied by Auger Electron Spectroscopy (AES) and Low-Energy Electron Diffraction (LEED) spectroscopy. The dependence of the cleaning efficiency on the laser fluence was investigated by using a mildly focused laser beam and carefully measuring the energy density distribution of the laser spot impinging on the sample. These values were compared with the AES spectra measured in different points of the irradiated area and with the morphology observed by optical microscopy. Samples as received from the manufacturer were first investigated. It was found that desorption of weakly bonded organic adsorbates occurs at energy densities as low as 0.3 J/cm², whereas significant oxide removal takes place only at an energy density above 0.8 J/cm², which produces damaged surface morphologies. The experimental findings, in agreement with the temperatures calculated for the laser-induced Si heating, indicated that a large fraction of the oxide film is dissolved in the molten silicon, leading to oxygen concentration below the AES detection limit only when the melted depth was of the order of several hundred nanometers. Atomically clean, damage-free Si(100) surfaces were obtained after irradiation of samples pre-etched for 1 min in a HF: H₂O (5%) solution, which had only a thin SiO _x (x < 2) layer and F, C and O containing adsorbed species. Complete contaminant elimination was achieved in this case with 15 pulses at 0.8 J/cm² without any damaging of the surface.     

The morphology of pulsed laser-induced damage on the surface of a copper film mirror

A copper film mirror was irradiated using a pulsed Nd:YAG laser (1.06 μm,10 ns) through an aperture. After laser irradiation, the damaged spot was analyzed using an optical microscope and periodic damage rings were found at the laser irradiation spot, the average spacing of these rings being about 40–50 μm. The damage ring could be observed in the periphery of the laser spot under lower laser energy densities. As the laser fluence increased, the periodic damage rings grew to cover the whole laser spot. Under higher laser energy density, the whole film was damaged and the rings disappeared. A Fresnel diffraction model is used to explain the appearance of these rings. The laser beam is diffracted by the aperture in the optic path, the laser intensity distribution at the copper film mirror becomes periodic rings and damage ripple pattern forms instantly with the laser ablation. The laser intensity distribution at the mirror surface is calculated using Collins formula, with which the period of the damage rings and other phenomena can be explained.     

Luminescent silicon nanocrystal dots fabricated by SiCl4/H2 RF plasma-enhanced chemical vapor deposition

Luminescent nanocrystalline Si dots were fabricated directly on thermally grown SiO₂ at 120°C by conventional RF plasma-enhanced chemical vapor deposition using tetrachlorosilane, SiCl₄ and H₂. As-deposited Si dot exhibits photoluminescence (PL) in the visible region, consisting of two broad bands corresponding to photon energies of 1.38 and 1.48 eV. Storage in air enhances PL and shifts the PL peak energy to higher wavelengths for dots of diameter less than 10 nm. Fourier transform attenuated total reflection absorption spectroscopy (FTIR-ATR) study reveals that the spontaneous oxidation proceeds until saturation after 70 h at dot sizes of 3–5 nm. The relationship between PL intensity, blueshift of PL peak energy, and surface termination species during oxidation indicates that these changes are attributed to the increased density of radiative centers at the Si nanocrystal dot/SiO₂ interface and enhancement of the quantum confinement effect.     

Fabrication of compositionally graded thin films by gravity-assisted pulsed laser ablation

A compositionally graded thin film of FeSi₂ was fabricated by a gravity-assisted pulsed laser ablation (GAPLA) system. By this method, a compositionally graded structure was successfully produced under a gravity field of 5400 G. We demonstrate that the atomic fraction of Fe, the heavier component of the thin film measured by scanning electron microscope/energy dispersive X-ray (SEM-EDX), showed increasing spatial distribution with the direction of gravity. We found that optimal laser fluence exists to give a thin film having the largest possible spatial compositional gradient. We found that surface energy density on the substrate surface is the key parameter to control the composition distribution. Furthermore, the ratio of Fe/Si of the film did not match that of the target. This result shows that the Si component is selectively etched during the film-forming process. Relatively high laser fluence as well as a very narrow space between the target and the substrate are essential to etch the film once it is deposited, in order to re-ionize and etch Si selectively while gravity accelerates both Fe and Si particles to the direction of gravity. We hypothesize that this process accounts for both the change in the stoichiometry and the formation of composition distribution.     

Light Trapping and Down‐Shifting Effect of Periodically Nanopatterned Si‐Quantum‐Dot‐Based Structures for Enhanced Photovoltaic Properties

Periodically nanopatterned Si structures have been prepared by using a nanosphere lithography technique. The formed nanopatterned structures exhibit good anti‐reflection and enhanced optical absorption characteristics. The mean surface reflectance weighted by AM1.5 solar spectrum (300–1200 nm) is as low as 5%. By depositing Si quantum dot/SiO₂ multilayers (MLs) on the nanopatterned Si substrate, the optical absorption is higher than 90%, which is significantly improved compared with the same multilayers deposited on flat Si substrate. Furthermore, the prototype n‐Si/Si quantum dot/SiO₂ MLs/p‐Si heterojunction solar cells has been fabricated, and it is found that the external quantum efficiency is obviously enhanced for nanopatterned cell in a wide spectral range compared with the flat cell. The corresponding short‐circuit current density is increased from 25.5 mA cm^?2 for flat cell to 29.0 mA cm^?2 for nano‐patterned one. The improvement of cell performance can be attributed both to the reduced light loss and the down‐shifting effect of Si quantum dots/SiO₂ MLs by forming periodically nanopatterned structures.     

非晶Si/SiO2超晶格结构的交流电致发光

设计并用磁控溅射方法制备了非晶Si/SiO     

Systematic investigation of the reactive ion beam sputter deposition process of SiO<Subscript>2</Subscript>

Ion beam sputter deposition (IBSD) is an established physical vapour deposition technique that offers the opportunity to tailor the properties of film-forming particles and, consequently, film properties. This is because of two reasons: (i) ion generation and acceleration (ion source), sputtering (target) and film deposition (substrate) are locally separated. (ii) The angular and energy distribution of sputtered target atoms and scattered primary particles depend on ion incidence angle, ion energy, and ion species. Ion beam sputtering of a Si target in a reactive oxygen atmosphere was used to grow SiO₂ films on silicon substrates. The sputtering geometry, ion energy and ion species were varied systematically and their influence on film properties was investigated. The SiO₂ films are amorphous. The growth rate increases with increasing ion energy and ion incidence angle. Thickness, index of refraction, stoichiometry, mass density and surface roughness show a strong correlation with the sputtering geometry. A considerable amount of primary inert gas particles is found in the deposited films. The primary ion species also has an impact on the film properties, whereas the influence of the ion energy is rather small.     

Formation of periodic surface nanostructures on Ti:Al2O3 crystals using femtosecond laser pulses

Periodic surface nanostructures are observed on Ti³⁺:Al₂O₃ single crystals that have been irradiated by a single focused beam from a femtosecond pulsed laser (wavelength: 800 nm; pulse duration: 130 and 152 fs). Atomic force microscopy images of single-ablated zones and modified structures created by fixing and translating samples through the focal region of a linearly polarized laser beam reveal self-organized periodic surface nanostructures (ripples) with a subwavelength spacing, which are oriented perpendicular to the electric-field vector of the laser beam. The period of the subwavelength ripples obtained by linearly polarized laser irradiation varies from ∼λ/5 to 2λ/5 (λ: incident laser wavelength) depending on the laser pulse energy. This phenomenon can be explained by assuming that the incident light field interferes with the electric field of electron plasma waves propagating inside the material; this interference periodically modulates the electron plasma density and modifies the surface ablation. In addition, for the first time, we observe screw-shaped nanostructures in the focal spot of circularly polarized beam irradiation. The morphology of these nanostructures appears to reflect the circular polarization of the laser light.     

Modulation of the photoluminescence of Si quantum dots by means of CO2 laser pre-annealing

Si quantum dots (QDs) embedded in SiO₂ can be normally prepared by thermal annealing of SiO_x (x < 2) thin film at 1100 °C in an inert gas atmosphere. In this work, the SiO_x thin film was firstly subjected to a rapid irradiation of CO₂ laser in a dot by dot scanning mode, a process termed as pre-annealing, and then thermally annealed at 1100 °C for 1 h as usual. The photoluminescence (PL) intensity of Si QD was found to be enhanced after such pre-annealing treatment. This PL enhancement is not due to the additional thermal budget offered by laser for phase separation, but attributed to the production of extra nucleation sites for Si dots within SiO_x by laser irradiation, which facilitates the formation of extra Si QDs during the subsequent thermal annealing.     

Low cost fabrication of SiO2 optical waveguides by laser direct writing on Ti-doped Sol-Gel films

A commercial direct laser writing (DLW) system operating at 1070 nm was used to fabricate SiO₂ optical waveguides on silicon wafers. A Ti-doped SiO₂ Sol-Gel film was deposited on the SiO₂/Si substrate by the dip-coating technique, based on which SiO₂ optical waveguides were patterned by DLW using a Ytterbium fiber laser and followed by chemical etching. The effects of laser parameters and the preheated temperature of Sol-Gel films on the dimensions of optical waveguides were studied systematically. The differences of etching rate between laser irradiated and non-irradiated areas in Sol-Gel films preheated at various temperatures are characterized by measuring the thickness of the films. Results demonstrate that the available laser power density range for laser densification and the width of the patterned optical waveguides are influenced strongly by the preheated temperature of the Sol-Gel films. The width of the optimized optical waveguide in this work is 25 μm. The minimum propagation loss of the fabricated optical waveguides is 1.7 dB cm⁻¹ at the wavelength of 1550 nm.     

F2 laser induced oxidation of inorganic material

Transparent SiO₂ thin films were selectively fabricated on Si wafer by 157 nm F₂ laser in N₂/O₂ gas atmosphere. The F₂ laser photochemically produced active O(¹D) atoms from O₂ molecules in the gas atmosphere; strong oxidation reaction could be induced to fabricate SiO₂ thin films only on the irradiated areas of Si wafer. The oxidation reaction was sensitive to the single pulse fluence of F₂ laser. The irradiated areas were swelled and the height was approximately 500-1000 nm at the 205-mJ/cm² single pulse fluence for 60 min laser irradiation. The fabricated thin films were analytically identified to be SiO₂ by the Fourier-transform IR spectroscopy. The SiO₂ thin films could be also removed by subsequent chemical etching to fabricate micro-holes 50 nm in depth on Si wafer for microfabrication.     

Introducing CdS into two- and three-dimensional photonic crystals

SiO₂/air three-dimensional (3D) periodic structures were fabricated by removing Si layers partially from Si/SiO₂ 3D photonic crystals (PhCs) formed by using autocloning. CdS/SiO₂ 3D periodic structures were formed by introducing CdS into the SiO₂/air structures by the TEA method and photoluminescence (PL) was observed from the introduced CdS. TiO₂/air/CdS two-dimensional (2D) PhCs were also fabricated by introducing CdS into the voids of TiO₂/air 2D periodic structures, in which SiO₂ layers were partially etched out from TiO₂/SiO₂ 2D PhCs fabricated by using autocloning. PL radiating normal to the surface was measured and large polarization dependence was observed.     

Si纳米量子点的LPCVD自组织化形成及其生长机理研究

采用低压化学汽相沉积(LPCVD)方法，依靠纯SiH₄气体分子的表面热分解反应， 在由Si—O—Si键和由Si—OH键终端的两种SiO₂表面上，自组织生长了Si纳米量子点. 实 验研究了所形成的Si纳米量子点密度随SiO₂表面的反应活性位置数、沉积温度以及反应气 压的变化关系. 依据LPCVD的表面热力学过程，定性地分析了Si纳米量子点的形成机理.研究结果对具有密度分布均匀和晶粒尺寸可控的Si纳米量子点的自组织生长，以及Si基新型量子电子器 关键词： Si纳米量子点 LPCVD 自组织化形成 生长机理     

Surface characteristics of SiO2-TiO2 strip fabricated by laser direct writing

SiO2-TiO2 sol-gel films axe deposited on SiO2/Si by dip-coating technique.The SiO2-TiO2 strips are fabricated by laser direct writing using an ytterbium fiber laser and followed by chemical etching.Surface structures,morphologies and roughness of the films and strips are characterized.The experimental results demonstrate that the SiO2-TiO2 sol-gel film is loose in structure and a shrinkage concave groove forms if the film is irradiated by laser beam.The surface roughness of both non-irradiated and laser irradiated areas increases with the chemical etching time.But the roughness of laser irradiated area increases more than thalt of non-irradiated area under the same etching time.After being etched for 28 s,the surface roughness value of the laser irradiated area increases from 0.3 nm to 3.1 nm.     

Design,fabrication and optical characterization of GaAs photonic crystal nanocavity lasers with InAs quantum dots gain wafer-bonded onto Si substrates

We designed and fabricated III–V compound semiconductor two-dimensional photonic crystal (PhC) thin film slabs with quantum dots (QDs) inside formed on Si substrates for highly integrated silicon photonic circuits with built-in nanolasers. Defect-shifted L3 type PhC nanocavities formed in GaAs thin films embedding 1.3 μm-emitting InAs QDs layer-transferred onto Si substrates were investigated. Quality factors <1000 for the PhC nanocavities on SiO₂ were enhanced up to ∼8000 by removing SiO₂ to form air-bridge structures, resulting in room temperature, continuous wave lasing.     

亚微米尺寸元件的离子束刻蚀制作

采用软光刻技术中的微接触印刷(μCP)技术、表面诱导的水蒸气冷凝、表面诱导的去湿行为,在金基底上制作出了亚微米的环状周期结构聚合物掩膜.通过对离子束刻蚀过程中各个参量对刻蚀元件的表面光洁度、轮廓保真度和线宽分辨的影响分析,结合掩膜的实际情况选择出了合适的离子束入射角、离子能量、束流密度和刻蚀时间等参量.依照这些参量刻蚀出了高质量的亚微米尺寸环状周期结构元件.通过对刻蚀出的元件的检测发现,刻出的元件表面光洁度、轮廓保真度和侧壁陡峭度都非常好.     

Auger-induced rearrangement of an ion-bombarded/SiO2 surface: Influence of electron energy

Ion bombardment of SiO₂ produces an understoichiometric surface layer containing a distribution of bonding states: SiO₂, SiO _x and free Si. Under the electron beam probe, a redistribution occurs, favoring the SiO₂ and free Si states at the expense of SiO _x , without loss of oxygen. The free Si yield exhibits the same energy dependence as the Auger yield of the Si LVV transition, thus pointing to Auger-induced bond rupture as the primary damaging event.     

Electron beam-physical vapor deposition of SiC/SiO2 high emissivity thin film

When heated by high-energy electron beam (EB), SiC can decompose into C and Si vapor. Subsequently, Si vapor reacts with metal oxide thin film on substrate surface and formats dense SiO₂ thin film at high substrate temperature. By means of the two reactions, SiC/SiO₂ composite thin film was prepared on the pre-oxidized 316 stainless steel (SS) substrate by electron beam-physical vapor deposition (EB-PVD) only using β-SiC target at 1000 °C. The thin film was examined by energy dispersive spectroscopy (EDS), grazing incidence X-ray asymmetry diffraction (GIAXD), scanning electron microscopy (SEM), atomic force microscopy (AFM), backscattered electron image (BSE), electron probe microanalysis (EPMA), X-ray photoelectron spectroscopy (XPS) and Fourier transformed infra-red (FT-IR) spectroscopy. The analysis results show that the thin film is mainly composed of imperfect nano-crystalline phases of 3C-SiC and SiO₂, especially, SiO₂ phase is nearly amorphous. Moreover, the smooth and dense thin film surface consists of nano-sized particles, and the interface between SiC/SiO₂ composite thin film and SS substrate is perfect. At last, the emissivity of SS substrate is improved by the SiC/SiO₂ composite thin film.     

Oxidation of the porous silicon surface under the action of a pulsed ionic beam: XPS and XANES studies

The changes in the electronic structure and phase composition of porous silicon under action of pulsed ionic beams have been studied by X-ray photoelectron spectroscopy (XPS) and X-ray absorption near-edge spectroscopy (XANES) using synchrotron radiation. The Si 2p and O 1s core photoemission spectra for different photoelectron collection angles, valence band photoemission spectra, and X-ray absorption near-edge fine structure spectrain the region of Si L _2,3 edges of the initial and irradiated samples have been analyzed. It has been found that, as a result of the irradiation, a thin oxide film consisting predominantly of higher oxide SiO₂ is formed on the porous silicon surface, which increases the energy gap of the silicon oxide. Such film exhibits passivation properties preventing the degradation of the composition and properties of porous silicon in contact with the environment.