Magnetic anisotropy properties of CoZrNb thin films deposited on PET substrate by magnetron sputtering

Soft magnetism and magnetic anisotropy properties of CoZrNb thin films deposited on polyethylene terephthalate (PET) substrate by magnetron sputtering were investigated. As the film thickness increases, the coercivity of films decreases from 7 to 4 Oe. It exhibits an in-plane uniaxial magnetic anisotropy as the thickness of CoZrNb thin films increases. An easy axis is observed in CoZrNb films along the direction transverse to the rolling direction of the polymer web.     

Effects of soft layer softness on the magnetic properties of perpendicular exchange-coupled nanocomposite films

The anisotropy of the soft layer in the Co_100−xPt_x/Co₇₁Pt₂₉ (x=0, 7 and 17) perpendicular exchange-coupled composite (ECC) films was varied by changing the Pt content. The effects of soft layer softness (thickness and anisotropy) on the coercivity and magnetization reversal mechanisms of ECC were studied. Results showed that both remanence ratio (M_r/M_s) and coercivity of the ECC films reduced with an increase in soft layer thickness. However, the rate of coercivity reduction reduced when soft layer anisotropy was increased simultaneously. This was confirmed by the following facts. For the ECC with Co soft layer, the magnetization reversal mechanism within the ECC grains changed from coherent rotation to domain wall motion when soft layer thickness was changed from 2 to 15 nm. The impact of soft layer thickness on the magnetization reversals of the ECC grains reduced with an increase in soft layer anisotropy. On the other hand, the change of soft layer easy axis direction could possibly change the reversal mechanism of the ECC grains. The above experimental results showed that the coercivity of ECC film was controlled by the reversal mechanism inside the ECC grains.     

Thickness induced magnetic anisotropic properties of Tb-Fe-Co thin films

The influence of Tb₂₅Fe₆₁Co₁₄ thin film thicknesses varying from 2 to 300 nm on the structural and magnetic properties has been systematically investigated by using of X-ray diffraction, scanning electron microscopy, transmission electron microscopy, magnetization, and magneto-optic Kerr effect microscopy measurements. Thin film growth mechanism is pursued and controlled by ex-situ X-ray refractometry measurements. X-ray diffraction studies reveal that the Tb₂₅Fe₆₁Co₁₄ films are amorphous regardless of thin films thicknesses. The magnetic properties are found to be strongly related to thickness and preferred orientation. With an increase in film thickness, the easy axis of magnetization is reversed from in-plane to out-of-plane direction. The change in the easy axes direction also affects the remanence, coercivity and magnetic anisotropy values. The cause for the magnetic anisotropy direction change from in-plane to out-of-plane can be related to the preferred orientation of the thin film which depends on the large out-of-plane coercivity and plays an important role in deciding the easy axes direction of the films. According to our results, up to the 100 nm in-plane direction is dominated over the whole system under major Fe-Fe interaction region, after that point, the magnetic anisotropy direction change to the out-of-plane under major Tb-Fe/Tb-Co interaction region and preferred orientation dependent perpendicular magnetic anisotropic properties become more dominated with 2.7 kOe high coercive field values.     

Tunable in-plane spin orientation in Fe/Si(557) film by step-induced competing magnetic anisotropies

Although the spin-reorientation transition from out-of-plane to in-plane in Fe/Si film is widely reported, the tuning of in-plane spin orientation is not yet well developed. Here, we report the thickness-, temperature- and Cu-adsorptioninduced in-plane spin-reorientation transition processes in Fe/Si(557) film, which can be attributed to the coexistence of two competing step-induced uniaxial magnetic anisotropies, i.e., surface magnetic anisotropy with magnetization easy axis perpendicular to the step and volume magnetic anisotropy with magnetization easy axis parallel to the step. For Fe film thickness smaller than 32 monolayer(ML), the magnitudes of two effects under various temperatures are extracted from the thickness dependence of uniaxial magnetic anisotropy. For Fe film thickness larger than 32 ML, the deviation of experimental results from fitting results is understood by the strain-relief-induced reduction of volume magnetic anisotropy.Additionally, the surface and volume magnetic anisotropies are both greatly reduced after covering Cu capping layer on Fe/Si(557) film while no significant influence of Na Cl capping layer on step-induced magnetic anisotropies is observed.The experimental results reported here provide various practical methods for manipulating in-plane spin orientation of Fe/Si films and improve the understanding of step-induced magnetic anisotropies.     

Magnetization reversal in the pinned layer of CoFe/PtMn bilayers

The magnetization reversal of the ferromagnetic (FM) layer in CoFe/PtMn exchange-coupled bilayer films has been investigated using bulk magnetometry. These films exhibit very complex angular dependence and the easy axis is perpendicular to the field applied during deposition and post-annealing. Holding the film at negative saturation of the FM layer for up to 17 h results in no change in the exchange field. We believe that this is a thermally stable exchange-coupled system. Only limited thermal activation with a small time constant appears and no thermally activated reversal of the antiferromagnetic layer with a large time constant exits.     

Perpendicular Exchange Coupling in TbFeCo/FePt Bilayer Films

We investigate the structure and exchange coupling in TbFeCo/FePt bilayer films. It is found that FePt has the L10 structure and the easy axis of the FePt film is perpendicular to the film plane. Results of the vibrating sample magnetometer and the magneto-optical Kerr effect measurements show a strong perpendicular exchange coupling between the ferrimagnetic TbFeCo layer and the hard ferromagnetic FePt layer. The magnetization direction of each layer and the process of magnetization reversal are discussed in detail. The switching field dependence on the exchange coupling has been modelled by micromagnetic simulation and the interlayer coupling constant is about -0.9 erg/cm^2 according to this simulation.     

Thermally activated magnetization reversal process of self-assembled Fe55Co45 nanowire arrays

We have investigated the temperature dependence of the magnetic properties and the magnetic relaxation of the Fe₅₅Co₄₅ nanowire arrays electrodeposited into self-assembled porous alumina templates with the diameter about 10 nm. X-ray diffraction (XRD) pattern indicates that the nanowire arrays are BCC structure with [1 1 0] orientation along the nanowire axes. Owing to the strong shape anisotropy, the nanowire arrays exhibit uniaxial magnetic anisotropy with the easy magnetization direction along the nanowire axes. The coercivity at 5 K can be explained by the sphere chains of the symmetric fanning mechanism. The temperature dependence of coercivity can be interpreted by thermally activated reversal mechanism as being the localized nucleation reversal mechanism with the activation volume much smaller than the wire volume. Strong field and temperature-dependent magnetic viscosity effects were also observed.     

Magnetic anisotropy and magnetization reversal of ultrathin iron films with in-plane magnetization on Si（111） substrates

The magnetic anisotropy and magnetization reversal of single crystal Fe films with thickness of 45 monolayer (ML) grown on Si(111) have been investigated by ferromagnetic resonance (FMR) and vibrating sample magnetometer (VSM). Owing to the significant modification of the energy surface in remanent state by slight misorientation from (111) plane and a uniaxial magnetic anisotropy, the azimuthal angular dependence of in-plane resonance field shows a six-fold symmetry with a weak uniaxial contribution, while the remanence of hysteresis loops displays a two-fold one. The competition between the first and second magnetocrystalline anisotropies may result in the switching of in-plane easy axis of the system. Combining the FMR and VSM measurements, the magnetization reversal mechanism has also been determined.     

Effect of Ag underlayer thickness on the microstructure and magnetic properties of L10-FePt films

FePt/Ag films were deposited on thermally oxidized Si(100) substrates by magnetron sputtering at room temperature and then the as-deposited films were annealed at 500 ^°C. The microstructure and magnetic properties of the films have been investigated by X-ray diffraction and vibrating sample magnetometry. The results indicate that introduction of the Ag underlayer promotes an ordering transformation of the FePt phase due to thermal tensile stress between the Ag underlayer and the FePt film. The in-plane tensile stress induced by the Ag underlayer should stretch the horizontal lattice parameter of FePt; thus, it is helpful for the ordering transformation. With increasing Ag underlayer thickness, the ordering parameter and coercivity first increase and then decrease. When the Ag underlayer thickness is 12 nm, the ordering parameter and coercivity of the film reach the maximum values, respectively. The Ag underlayer thickness also affects the magnetization reversal mechanism.     

Domain wall nucleation in epitaxial exchange-biased Fe/IrMn bilayers with highly misaligned anisotropies

The angular dependence of the magnetization reversal in epitaxial Fe/IrMn bilayers with collinear and non-collinear cubic and unidirectional anisotropies is investigated. Multistep loops with different magnetization reversal processes are observed for either positive or negative angles with respect to the Fe easy axis. The angular dependence of the switching fields displays the broken symmetry of the induced non-collinearity. The experimental results are reproduced with a generalized domain wall nucleation model that includes the induced anisotropy configuration and the peculiar asymmetric magnetic switching behavior. These results highlight the importance of the relative angle between anisotropies in epitaxial exchange bias systems with incoherent rotation reversal mechanism, opening a new pathway for tailoring the magnetic properties of such systems.     

Angular dependence of the coercivity and remanence of ordered arrays of Co nanowires

The angular dependence of the coercivity and remanence of ordered hexagonal arrays of Co nanowires prepared using anodic aluminum oxide templates was investigated. The experimental evolution of coercivity as a function of the angle, in which the external field is applied, is interpreted considering micromagnetic simulations. Depending on the angle between the axis of the wire and the applied magnetic field direction our results show that the magnetization reversal mode changes from vortex to a transverse domain wall. Besides, we observed that the dipolar interactions cause a reduction in coercive fields, mainly in the direction of easy magnetization of the nanowires. Good agreement between numerical and experimental data is obtained.     

Influence of magnetocrystalline anisotropy on the magnetization reversal mechanism in exchange bias Co/CoO bilayers

We investigated the reversal mechanism in a Co/CoO exchange bias bilayer with a pronounced magnetocrystalline anisotropy in the ferromagnet. The anisotropy, which is induced by the growth of a highly textured Co layer, imposes a distinct reversal mechanism along the magnetically easy and hard direction. It is shown that exchange bias can be induced along both directions, despite the magnetocrystalline anisotropy. The interplay between the magnetocrystalline anisotropy and exchange bias induces a different reversal mechanism for the subsequent reversals in the two crystallographic directions. Along the hard axis, the magnetization reverses according to the reversal mechanism observed before in polycrystalline exchange bias bilayers, i.e. domain wall nucleation and motion for the first reversal and coherent rotation for the subsequent ones. Along the easy axis, domain wall motion remains the dominant reversal mechanism and magnetization rotation has only a minor contribution.     

Magnetization reversal of ultrathin Fe film grown on Si（111） using iron silicide template

Ultrathin Fe films were epitaxially grown on Si（lll） by using an ultrathin iron silicide film with p（2 × 2） surface reconstruction as a template. The surface structure and magnetic properties were investigated in situ by low energy electron diffraction （LEED）, scanning tunnelling microscopy （STM）, and surface magneto-optical effect （SMOKE）. Polar SMOKE hysteresis loops demonstrate that the Fe ultrathin films with thickness t 〈 6 ML （monolayers） exhibit perpen-dicular magnetic anisotropy. The characters of M-H loops with the external magnetic field at difference angles and the angular dependence of coercivity suggest that the domain-wall pinning plays a dominant role in the magnetization reversal process.[第一段]     

Investigation of induced parallel magnetic anisotropy at low deposition temperature in Ba-hexaferrites thin films

In this paper we present the effect of low substrate temperature on structural, morphological, magnetic and optical properties of Ba-hexaferrite thin films. Films were deposited on single crystal Silicon (1 0 0) substrate employing the Pulsed Laser Deposition (PLD) technique. The structural, morphological, magnetic and optical properties are found to be strongly dependent on substrate temperature. The low substrate temperatures (room temperature to 200 °C) restrict the formation of larger grains. For the higher substrate temperature i.e., 400 °C, the grain size of the deposited thin film are much larger. The film grown at low substrate temperature do not show any anisotropy. As the substrate temperature is increased, the easy axis of the films alinged itself in the direction parallel to the film plane whereas the hard axis remained in the perpendicular direction. The higher substrate temperature caused the uniaxial magnetic anisotropy, which is very important in magnetic recording devices. The saturation magnetization and optical band gap energy values of 62 emu/cc and 1.75 eV, respectively, were achieved for the film of thickness 500 nm deposited at 400 °C. Higher values of coercivity, squareness and films thickness are associated with the growth of larger grains at higher substrate temperature.     

Magnetization distribution in submicrometer iron-nickel antidot arrays patterned by a focused ion beam

Antidots of size 0.5 μm are prepared by patterning iron-nickel films with a focused ion beam. The magnetization distribution in antidot arrays is examined with Lorentz transmission electron microscopy. It is shown that one side of the array makes an angle of about 20° with the easy magnetic axis of the film. Magnetization reversal in the direction close to the easy magnetic axis starts with domain nucleation at the antidot edges that are perpendicular to the applied field and adjacent to the unpatterned region of the film, and propagates as the domain walls move. Magnetization reversal in the direction close to the hard magnetic axis starts with magnetization rotation outside the patterned region at the antidot edges and propagates as the domain walls execute a complicated motion. It is demonstrated that some areas between the edges of adjacent antidots can carry information bits. Results obtained are explained in terms of competition between the demagnetizing energy, energy of internal anisotropy, and misorientation effect. The feasibility of such structures as high-density storage elements is discussed.     

Thickness-dependent magnetization reversal in CoZrNb amorphous films

Structure and magnetization of CoZrNb amorphous films prepared by DC magnetron sputtering have been studied as a function of film thickness (t), from 35 to 840 nm. Using comprehensive characterization, we show that the CoZrNb amorphous films possess a single phase and no nanocrystalline can be detected. The magnetic measurements indicate that the magnetization reversal of CoZrNb films is strongly dependent on t. That is, the coercivity is abruptly reduced to be lower than 4 Oe with t increasing from 35 to 105 nm, and then gradually decreases to ∼0.2 Oe as t increases. This coercivity transition versus t is accompanied by the strong magnetization reversal when t is larger than 105 nm. The results reveal that CoZrNb amorphous films with comparatively large film thickness (>100 nm) are suitable for sensors and anti-faked materials.     

Magnetization reversal process and intrinsic coercivity of sputtered Sm2Co17-based films

The Sm₂Co₁₇-based intermetallic films with additives of Fe, Cu, and Zr have been deposited on Si(1 0 0) substrates by dc magnetron sputtering process. Subsequent thermal treatment and the film thickness are found to have significant contribution to the crystal structure and grain structure, which determines the magnetization reversal process and intrinsic coercivity (H_C) of these films. The conventional thermal annealing (CTA) treatment almost failed to crystallize the as-deposited films, leading to a very low H_C. Continuous and homogeneous domain walls cannot form in this deteriorated microstructure, so that the pinning mechanism can be excluded. Contrarily, the films with thickness exceeding 0.8 μm treated by rapid recurrent thermal annealing (RRTA) show an improved H_C, which is attributed to the observed completed crystallization and compact microstructure. It is suggested that this film structure is responsible for providing continuous and homogeneous domain walls, leading to a magnetization reversal process controlled by domain wall pinning model. In special, the H_C of the RRTA-treated film with thickness of 1.8 μm shows a good temperature dependence from 25 to 300 °C, with intrinsic coercivity temperature coefficient β of −0.23%/°C.     

Magnetization reversal in a preferred oriented (111) L1(0) FePt grown on a soft magnetic metallic glass for tilted magnetic recording

L1(0) FePt is an important material for the fabrication of high density perpendicular recording media, but the ultrahigh coercivity of L1(0) FePt restricts its use. Tilting of the magnetic easy axis and the introduction of a soft magnetic underlayer can solve this problem. However, high temperature processing and the requirement of epitaxial growth conditions for obtaining an L1(0) FePt phase are the main hurdles to be overcome. Here, we introduce a bilayered magnetic structure ((111) L1(0) FePt/glassy Fe(71)Nb(4)Hf(3)Y(2)B(20)/SiO(2)/Si) in which the magnetic easy axis of L1(0) FePt is tilted by ~36° from the film plane and epitaxial growth conditions are not required. The soft magnetic underlayer not only promotes the growth of L1(0) FePt with the preferred orientation but also provides an easy cost-effective micro/nanopatterning of recording bits. A detailed magnetic characterization of the bilayered structure in which the thickness of (111) L1(0) FePt with the soft magnetic Fe(71)Nb(4)Hf(3)Y(2)B(20) glassy underlayer varied from 5 to 60 nm is carried out in an effort to understand the magnetization switching mechanism. The magnetization switching behavior is almost the same for bilayered structures in which FePt layer thickness is >10 nm (greater than the domain wall thickness of FePt). For FePt film ~10 nm thick, magnetization reversal takes place in a very narrow field range. Magnetization reversal first takes place in the soft magnetic underlayer. On further increase in the reverse magnetic field, the domain wall in the soft magnetic layer compresses at the interface of the hard and soft layers. Once the domain wall energy becomes sufficiently large to overcome the nucleation energy of the domain wall in L1(0) FePt, the magnetization of the whole bilayer is reversed. This process takes place quickly because the domain walls in the hard layer do not need to move, and the formation of a narrower domain wall may not be favorable energetically. Our results showed that the present bilayered structure is very promising for the fabrication of tilted bit-patterned magnetic recording media.     

La0.67Ca0.33MnO3薄膜中的矫顽力随膜厚与衬底的变化

系统研究了衬底为SrTiO3和LaAlO3上的La0.67Ca0.33MnO3薄膜中的矫顽力随厚度和应变的变化。结构分析表明薄膜为（001）方向织构，而且薄膜中的晶粒尺寸随着薄膜厚度的减小而减小。磁测量表明矫顽力先随着膜厚的减小而增加，在t=10-25nm附近到达一极大值。随后，矫顽力随厚度的减小而降低。还得出矫顽力的大小与测量方向有关：t≥25nm (t≤10nm)时，难磁化方向的矫顽力大于（小于）易磁化方向的矫顽力。据此，我们提出：在厚膜（t≥25nm）中，矫顽力变化由畴壁钉扎机制决定；在超薄膜（t≤10nm）中，则与磁畴的形核机制有关。根据t= 5、10、25、400nm的LCMO/STO薄膜的初始磁化曲线，以及t=5，50nm的LCMO/LAO薄膜的小磁滞回线的测量，我们对薄膜中矫顽力机制作了验证，并且还讨论了钉扎和形核机制发生的非均匀区的尺寸。     

Coherent vs. incoherent switching for elongated CoPt–O grains in high-anisotropy medium

In most micro-magnetic models, a coherent switching mode is assumed for magnetic grains in the media. In this paper, we use state-of-art perpendicular recording media to study the magnetic switching behavior at different temperatures. The temperature dependence of the coercive field is measured and used as an indication of the strength of the thermal activation. For the thinner samples, the normalized coercive field can be described by an Arrhenius–Néel Brown (ANB) model. This model suggests that coherent switching dominates in these samples. For the thicker films, the normalized coercive field and, hence, the switching volume does not increase with increasing thickness, indicating the existence of incoherent switching. For the particular CoPt–O alloy studied, the crossover from coherent to incoherent switching occurs at a thickness of about 21 nm. For an average grain diameter of 7 nm, this corresponds to a grain aspect ratio of 3.