Contribution of superconducting grains and grain boundaries to the magnetoresistance of ceramic YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>7 − δ</Subscript> high-temperature superconductors in weak magnetic fields

The current-voltage characteristics of granular YBa₂Cu₃O_6.95 high-temperature superconductor samples have been measured at a temperature of 77.3 K in external transverse magnetic fields H _ext with a strength of up to H _ext ≈ 500 Oe for low transport current densities (0.1 A/cm² ≤ j ≤ 0.6 A/cm²). The current-voltage characteristics obtained have been used to construct dependences of the magnetoresistance ρ on the quantities j (ρ(j) _Hext=const) and H _ext(ρ(H _ext) _{j = const}). It has been revealed that the current and field dependences of the magnetoresistance exhibit anomalies at H _ext ≥ H _c1g , where H _c1g is the lower critical field of superconducting grains. A comparative analysis of the dependences ρ(j)H _{ext = const} and ρ(H _ext) _{j = const} has made it possible to develop concepts regarding the influence of the processes of redistribution of the magnetic field between grain boundaries and superconducting grains on the transport and galvanomagnetic properties of granular high-temperature superconductors. It has been established that the field dependences of the magnetoresistance exhibit specific features associated with the beginning of penetration of Josephson vortices into grain boundaries in the magnetic field H _c1J and with the breaking of a continuous chain of Josephson junctions in the magnetic field H _c2J .     

Quadratic spherical bessel functions and the inverse scattering problem

In the course of inverting the partial-wave Born approximation, a new expression for the inverse function ofj _l ² (ρ) was obtained. Using this result, one can also derive two expressions involving the binomial coefficients. Finally, a particular differential operator whose effect onj _l ² (ρ) was previously investigated by Mavromatis and Jalal is shown to have similar effects onn _l ² (ρ) andn _l (ρ)j _l (ρ).     

Ageing of the avalanche angle in immersed granular matter

We have studied the temperature dependent resistivity ρ( T ) of La_2-xSr_xCuO₄ epitaxial thin films in the doping range 0.045 ⩽ x ⩽ 0.25 in pulsed magnetic fields up to 50 T. The zero-field resistivity ρ( T ) of these samples in the pseudogap regime, can be scaled onto one single universal curve in a broad temperature range by using a linear transformation of both temperature and resistivity. The high field data ρ( T ) reveal a metal to insulator transition (MIT) at low temperatures, well into the overdoped regime. For samples having k _F l < 1, with k_F the Fermi wave vector and l the mean free path, this low temperature insulating behavior of the resistivity is described by the variable range hopping conductivity (VRH). For samples with k _F l > 1, the divergence follows ρ( T ) ∼ ln (1/ T ) or a power law, depending upon the Sr-content. We further found that the residual conductivity at the minimum in ρ( T ), appearing due to the MIT, follows a linear behavior with respect to the Sr-content. It is argued that the unusual MIT in compounds with k _F l > 1, is most probably associated with the pseudogap and the behavior of charge stripes at low temperatures. Received 4 January 2002 / Received in final form 7 May 2002 Published online 14 October 2002 RID="a" ID="a"e-mail: liesbet.weckhuysen@fys.kuleuven.ac.be     

Magnetoresistance and Hall effect in La0.8Sr0.2MnO3

A comparative study of the longitudinal ρ _xx and transverse ρ _xy resistivities and magnetic susceptibility χ _ac of La_0.8Sr_0.2MnO₃ single crystals and ceramic samples has been conducted in a wide range of temperatures T=1.7–370 K and magnetic fields, H=0–13.6 T. It turned out that the relation ρ _xy ∼ρ _xx , which is expected to hold in the case of carrier scattering by magnetic fluctuations, applies to the single crystals. In polycrystals, an additional H-dependent contribution to the resistivity tentatively attributed to plane (near grain boundaries) and bulk “defects” of the magnetic sublattice has been detected. The scattering of carriers by these defects does not make a notable contribution to the anomalous Hall effect and magnetic susceptibility χ _ac. As a result, the curve of ρ _xy versus ρ _xx seems to be steeper than a linear dependence. Under the assumption that the materials under investigation are metals with constant carrier concentrations, the conductivity σ=1/ρ _xx due to the critical magnetic scattering calculated in the molecular field approximation reproduces the main features of experimental data, namely, the drop in the amplitude and shift of the resistivity peak near the Curie point with increasing magnetic field H and also a relatively slow change in the derivative dσ/dH with increasing temperature in the region T⩽T _C . The large hole concentration of about two per unit cell derived from Hall measurements indicates that carriers of opposite signs can coexist in these materials. Zh. éksp. Teor. Fiz. 116, 671–683 (August 1999)     

Peculiarities in galvanomagnetic properties of granular YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>7−δ</Subscript> high-temperature superconductors in very weak magnetic fields

The character of the evolution of a system of weak links in granular high-temperature superconductors under the action of an external magnetic field H _ext has been studied by measuring the current-voltage characteristics E(j)_{Hext = const}E{(j)_{{H_{ext}} = const}} of YBa₂Cu₃O_{7 − δ} (δ ≈ 0.05) ceramic samples. The measurements have been performed at T = 77.3 K in a range of very weak magnetic fields 0 < H _ext ≲ 0.5H _c2J, where H _c2J is the upper critical field of the Josephson weak links. The results have been used to construct the field dependences of the magnetoresistance Δρ(H _ext) of the superconducting ceramics. It has been established that the parameters of the power equation E = A(j − j _cJ)^ν and the magnetoresistance Δρ are nonmonotonic functions of the external magnetic field. The presence of extrema in the curves A(H _ext), j _cJ(H _ext), ν(H _ext), and Δρ(H _ext) indicates that different systems of weak links between grain boundaries, which are capable of forming extended Josephson contacts, undergo sequential transitions to a resistive state with an increase in H _ext.     

Physical property characterization of bulk MgB<Subscript>2</Subscript> superconductor

We report synthesis, structure/micro-structure, resistivity under magnetic field [ρ(T)H], Raman spectra, thermoelectric power S(T), thermal conductivity κ(T), and magnetization of ambient pressure argon annealed polycrystalline bulk samples of MgB₂, processed under identical conditions. The compound crystallizes in hexagonal structure with space group P6/mmm. Transmission electron microscopy (TEM) reveals electron micrographs showing various types of defect features along with the presence of 3–4 nm thick amorphous layers forming the grain boundaries of otherwise crystalline MgB₂. Raman spectra of the compound at room temperature exhibited characteristic phonon peak at 600 cm^-1. Superconductivity is observed at 37.2 K by magnetic susceptibility χ(T), resistivity ρ(T), thermoelectric power S(T), and thermal conductivity κ(T) measurements. The power law fitting of ρ(T) give rise to Debye temperature (Θ_D) at 1400 K which is found consistent with the theoretical fitting of S(T), exhibiting Θ _D of 1410 K and carrier density of 3.81 × 10²⁸/m³. Thermal conductivity κ(T) shows a jump at 38 K, i.e., at T_c, which was missing in some earlier reports. Critical current density (J_c) of up to 10⁵ A/cm² in 1–2 T (Tesla) fields at temperatures (T) of up to 10 K is seen from magnetization measurements. The irreversibility field, defined as the field related to merging of M(H) loops is found to be 78, 68 and 42 kOe at 4, 10 and 20 K respectively. The superconducting performance parameters viz. irreversibility field (H_irr) and critical current density J_c(H) of the studied MgB₂ are improved profoundly with addition of nano-SiC and nano-diamond. The physical property parameters measured for polycrystalline MgB₂ are compared with earlier reports and a consolidated insight of various physical properties is presented.     

Dielectric multilayer nanostructures of tantalum and aluminum oxides

This paper reports on the experimental results of investigations into the mechanism of formation and dielectric characteristics of multilayer nanostructures prepared through the molecular layer-by-layer growth of tantalum and aluminum oxides. It is demonstrated that the permittivity of the multilayer nanostructures varies almost linearly with a change in the content of the components. The electrical conductivity depends on the ratio between the Al₂O₃ layer thickness d_i and the Ta₂O₅ layer thickness d_j. For a layer thickness d_i (d_j)<5 nm, the tunneling phenomena contribute significantly to the permittivity and conductivity of these nanostructures.     

Role of surface phenomena in the magnetoresistivity of polycrystalline manganites La1−x CaxMnO3

The dc electrical resistivity and magnetoresistivity of polycrystalline manganites La_1−x Ca_xMnO₃ (x=0–0.3) are investigated as functions of the temperature, magnetic field and electric field, along with the microwave surface resistance. The investigations show that the dc electrical resistivity and magnetoresistivity are governed by the surface properties of the intergranular boundaries. The dc electrical resistivity is observed to decrease substantially (tenfold) for a comparatively small electric field (E⋟100 V/cm). Estimates are obtained for the internal electrical resistivity of the granules, the thickness of the contact layer (which depends on the temperature and the magnetic field), and the height of the potential barrier between the interfaces separating the surface layer and inner layer of a granule. Fiz. Tverd. Tela (St. Petersburg) 40, 1881–1884 (October 1998)     

Structure property correlations in superconducting Ti-Nb alloys

Titanium-rich transition metal alloys are metastable in their quenched boc β phase. The instability is relieved by low temperature structural transformations. We have investigated this in a series of Ti-Nb alloys, through the measurements of electrical resistivity (ρ), superconducting transition temperature and upper critical field. Supporting structural evidence has been obtained from transmission electron microscopy (tem) and x-ray studies. It is shown that both ρ and dρ/dT can be used as useful indices of this instability. The enhanced value of resistivity on account of the instability results in the enhancement of upper critical field as shown from dH _c2/dT measurements.     

Magnetic, electrical, and optical properties of Ca1 ? x Ce x MnO3 ( x ≤ 0.12) single crystals

The magnetic, electrical, and optical properties of Ca_{1 − x} Ce _x MnO₃ (x≤0.12) manganite single crystals are investigated with the aim of revealing the specific features of the multiphase electronic and magnetic state as a function of the cerium concentration and the atmosphere used for growing single crystals. It is found that the concentration dependence of the low-temperature magnetization M(x) of the single crystals is shifted toward the high-concentration range as compared to the corresponding dependence of the polycrystals, which is explained by the predominant cation deficiency. The electrical resistivity and the reflection spectra of the single crystals in the infrared spectral range indicate that charge carriers exhibit a band nature at temperatures close to room temperature. The temperature dependence of the electrical resistivity of the single crystal with x = 0.08, which has the maximum magnetization in the studied series of Ca_{1 − x} Ce _x MnO₃ compounds, unlike polycrystals, exhibits a metallic behavior over the entire temperature range. The G-type antiferromagnetic phase with the Néel and Curie temperatures T _N(G) = T _C = 100 K is characterized by maxima of the electrical resistivity ρ and the magnetoresistance Δρ/ρ = |(ρ₀ − ρ _H )/ρ₀| = 38% in the magnetic field H = 90 kOe. The magnetoresistance Δρ/ρ of the single crystals at cerium concentrations x = 0.10 and 0.12 with variations in temperature exhibit three specific features: near the temperature of charge ordering T _co, near the temperature of the magnetic phase transition to the C-type antiferromagnetic phase T _N(C), and near the temperature of the phase transition to the magnetic charge-ordered phase T _N(MCO). An anomalous temperature dependence of the magnetization is revealed for a single crystal with x = 0.10 grown in oxygen at a pressure of 5 atm, which is explained by the presence of regions with hole conductivity due to cation deficiency. The inhomogeneous electronic and magnetic state is associated with the interrelation of the charge, orbital, and spin orderings. Original Russian Text ? N.N. Loshkareva, A.V. Korolev, N.I. Solin, E.V. Mostovshchikova, S.V. Naumov, N.V. Kostromitina, A.M. Balbashov, 2009, published in Zhurnal éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2009, Vol. 135, No. 1, pp. 98–107.     

Quantum oscillations of the resistivity and hall coefficient and the quantum limit in Bi<Subscript>0.93</Subscript>Sb<Subscript>0.07</Subscript> alloys in a magnetic field along the trigonal axis

The dependences of the electrical resistivity ρ and the Hall coefficient R on the magnetic field have been measured for single-crystal samples of the n-Bi_0.93Sb_0.07 semiconductor alloys with electron concentrations in the range 1 × 10¹⁶ cm⁻³ < n < 2 × 10¹⁸ cm⁻³. It has been found that the measured dependences exhibit Shubnikov-de Haas quantum oscillations. The magnetic fields corresponding to the maxima of the quantum oscillations of the electrical resistivity are in good agreement with the calculated values of the magnetic fields in which the Landau quantum level with the number N intersects the Fermi level. The quantum oscillations of the Hall coefficient with small numbers are characterized by a significant spin splitting. In a magnetic field directed along the trigonal axis, the quantum oscillations of the resistivity ρ and the Hall coefficient R are associated with electrons of the three-valley semiconductor and are in phase with the magnetic field. In the case of a magnetic field directed parallel to the binary axis, the quantum oscillations associated both with electrons of the secondary ellipsoids in weaker magnetic fields and with electrons of the main ellipsoid in strong magnetic fields (after the overflow of electrons from the secondary ellipsoids to the main ellipsoid) are also in phase. In magnetic fields of the quantum limit ħω _c /2 ≥ E _F, the electrical conductivity increases with an increase in the magnetic field: σ₂₂(H) ∼ H ^k . A theoretical evaluation of the exponent in this expression for a nonparabolic semiconductor leads to values of k close to the experimental values in the range 4 ≤ k ≤ 4.6, which were obtained for samples of the semiconductor alloys with different electron concentrations. A further increase in the magnetic field results in a decrease of the exponent k and in the transition to the inequality σ₂₂(H) ≤ σ₂₁(H).     

Computational analysis of factors influencing thermal conductivity of nanofluids

Numerical investigations are conducted to study the effect of factors such as particle clustering and interfacial layer thickness on thermal conductivity of nanofluids. Based on this, parameters including Kapitza radius and fractal and chemical dimension which have received little attention by previous research are rigorously investigated. The degree of thermal enhancement is analyzed for increasing aggregate size, particle concentration, interfacial thermal resistance, and fractal and chemical dimensions. This analysis is conducted for water-based nanofluids of Alumina (Al₂O₃), CuO, and Titania (TiO₂) nanoparticles where the particle concentrations are varied up to 4 vol%. Results from the numerical work are validated using available experimental data. For the case of aggregate size, particle concentration, and interfacial thermal resistance, the aspect ratio (ratio of radius of gyration of aggregate to radius of primary particle, R _g/a) is varied from 2 to 60. It was found that the enhancement decreases with interfacial layer thickness. Also the rate of decrease is more significant after a given aggregate size. For a given interfacial resistance, the enhancement is mostly sensitive to R _g/a < 20 indicated by the steep gradients of data plots. Predicted and experimental data for thermal conductivity enhancement are in good agreement. On the influence of fractal and chemical dimensions (d _l and d _f) of Alumina–water nanofluid, the R _g/a was varied from 2 to 8, d _l from 1.2 to 1.8, and d _f from 1.75 to 2.5. For a given concentration, the enhancement increased with the reduction of d _l or d _f. It appears a distinctive sensitivity of the enhancement to d _f, in particular, in the range 2–2.25, for all values of R _g/a. However, the sensitivity of d _l was largely depended on the value of R _g/a. The information gathered from this study on the sensitivity of thermal conductivity enhancement to aggregate size, particle concentration, interfacial resistance, and fractal and chemical dimensions will be useful in manufacturing highly thermally conductive nanofluids. Further research on the refine cluster evolution dynamics as a function of particle-scale properties is underway.     

Intrinsic inhomogeneities of low-doped lanthanum manganites in the paramagnetic temperature range

The nature of the electrical resistivity for low-doped lanthanum manganites is elucidated. The electrical resistivity is described by the Efros-Shklovskii law (lnρ √ (T ₀/T)^−1/2, where T ₀ √ 1/R _ls) in the temperature range from T* ≈ 300 K ≈ T _C (T _C is the Curie temperature for conducting manganites) to their T _C and is explained by the tunneling of carriers between localized states. The magnetoresistance is explained by a change in the size of localized states R _ls in a magnetic field. The patterns of change in R _ls with temperature and magnetic field strength determined from magnetotransport properties are satisfactorily described in the model of phase separation into small-radius metallic droplets in a paramagnetic matrix. The sizes R _ls and their temperature dependence have been estimated through magnetic measurements. The results confirm the existence of a Griffith phase. The intrinsic inhomogeneities produced by thermodynamic phase separation determine the electrical resistivity and magnetoresistance of lanthanum manganites.     

Influence of magnetic field on the superconducting transition in a Nd1.82Ce0.18CuO4−δ film

The temperature and magnetic-field dependences of the resistivity ρ and Hall effect R(j‖ab, B‖c) in a Nd_1.82Ce_0.18CuO_4−δ single crystal film (T _c =6 K) is investigated at temperatures 1.4≤T≤20 K and magnetic fields 0≤B≤5.5 T. At the lowest temperature T=1.4 K the resistive state (exhibiting resistivity and the Hall effect) arises in a magnetic field B=0.5 T. A transition to the normal state is completed at B _c 2≃3 T, where the Hall coefficient becomes nearly constant. The negative magnetoresistance due to the weak-localization effect in the normal state is observed for B>3 T. The nonmonotonic behavior and the inversion of the sign of R(B) in the mixed state are explained in a reasonable way by the flux-flow model with the effect of pinning taken into account. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 6, 407–411 (25 September 1996) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Long Cycles in a Perturbed Mean Field Model of a Boson Gas

In this paper we give a precise mathematical formulation of the relation between Bose condensation and long cycles and prove its validity for the perturbed mean field model of a Bose gas. We decompose the total density ρ=ρ_short+ρ_long into the number density of particles belonging to cycles of finite length (ρ_short) and to infinitely long cycles (ρ_long) in the thermodynamic limit. For this model we prove that when there is Bose condensation, ρ_long is different from zero and identical to the condensate density. This is achieved through an application of the theory of large deviations. We discuss the possible equivalence of ρ_long≠ 0 with off-diagonal long range order and winding paths that occur in the path integral representation of the Bose gas     

Influence of grain boundaries on resistivity of manganites La1 − x K x MnO3

Results of investigation of resistivity and magnetoresistance of manganites La_{1 − x} K _x MnO₃ (x = 0.050–0.175) are presented. Behavior of resistivity ρ(T) in the paramagnetic and ferromagnetic phases has been described. To describe ρ(T) near the phase-transition temperature, notions of the percolation theory have been used. Two maxima have been found in the dependence ρ(T); their appearance has been attributed to the ceramic nature of the studied samples. The observed increase in magnetoresistance with a decrease in temperature is caused by intergranular spin-polarized tunneling of charge carriers.