Paramagnetic defects in ZnSe crystals doped with iron ions

The electron paramagnetic resonance (EPR) spectra of iron-doped ZnSe single crystals were studied. In addition to cubic Fe³⁺ and Mn²⁺ centers and also Fe²⁺, and Cr²⁺ centers, monoclinic Fe³+ complexes locally compensated by Cu+ ions were revealed. Some trigonal centers with a spin of 3/2 were also found and studied. The zero-field splittings of monoclinic centers were measured, and the parameters of the monoclinic and trigonal spin Hamiltonians were determined. The nature of trigonal centers was discussed.     

Low temperature phase transition in ZnSe doped with nickel

Neutron diffraction and ultrasonic experiments as well as measurements of heat conductivity in ZnSe and Zn_1−xNi_xSe (x=0.0025) semiconductors have been carried out. As a result, a structural transition induced by Ni impurity has been found at      

Temperature and concentration quenching of mid-IR photoluminescence in iron doped ZnSe and ZnS laser crystals

Concentration dependences of the mid-IR kinetic of luminescence at ⁵E?⁵T₂ transition in Fe:ZnSe and Fe:ZnS laser samples were studied in 14–300 K temperature ranges. Radiation lifetime in Fe:ZnSe samples measured using low doped samples with iron concentration 0.1×10¹⁸ cm^?3 was estimated to be 57 μs. The magnetic susceptibility for higher doped (C_Fe=38 and 112×10¹⁸ cm^?3) Fe:ZnSe samples was found to consist of a paramagnetic Curie–Weiss behavior arising from the weakly interacting Fe²⁺ ions and a diamagnetic ZnSe contribution plus a temperature-independent, field-dependent contribution possibly arising from very small amounts of aggregated Fe.     

Optical absorption edge in doped and undoped ZnSe crystals

The optical absorption near the fundamental edge has been investigated for different types of doped and undoped cubic ZnSe crystals. Crystals grown from the vapour phase, with and without doping, and crystals grown by the chemical transport technique are compared.Results of absorption coefficient measurements made from 77 to 313 LK are discussed and it is shown that for undoped samples, the absorption tail is dominated by electrons-phonons interactions and Urbach's rule is nearly verified, whereas for doped samples the influence of defects is preponderant.     

Nanoscale distortions of the lattice of a ZnSe crystal doped with 3d elements

The structure of semiconductor crystals Zn_1?x V _x ²⁺ Se (x = 0.0018) and Zn_1?x Cr _x ²⁺ Se (x = 0.0006) was studied for the first time using thermal neutron diffraction at 300 and 120 K. The diffraction patterns of the crystals were revealed to contain diffuse scattering regions near the Bragg reflections of the initial cubic lattice. The experimental results are discussed in combination with earlier obtained data on neutron diffraction and propagation of ultrasonic waves in Zn_1?x Ni _x ²⁺ Se (x = 0.0025) and Zn_1?x Cr _x ²⁺ Se (x = 0.0029). The diffuse scattering is shown to be due to nanoscale shear strains of the ZnSe lattice. The character of these strains is determined by Jahn-Teller 3d ions.     

Photoluminescence of the ZnSe single crystals doped by thermal diffusion of nitrogen

Photoluminescence (PL) spectra of ZnSe single crystals annealed in different ambients containing molecular nitrogen are investigated. The compensating activity of N impurity in n-ZnSe crystals is shown. It is caused by the formation of N_Se acceptor centers, having 101-108 meV activation energy. The intensity of amplification of both long-wave luminescence spectra bands and the edge luminescence spectra bands caused by the presence of nitrogen in annealing medium is investigated. The presented results allow one to assign the long-wave luminescence to deep acceptors caused by uncontrollable impurities, and the relevant bands of the edge luminescence spectra to the excitons bound with the same deep acceptors. The model explaining the transformations of the luminescent properties of ZnSe crystals by means of nitrogen impurity doping is proposed. The model considers the presence of donors having 75 meV activation energy, acceptors having 220-720 meV activation energy and centers having levels localized near the middle of the band gap.     

Exciton system heating in ZnSe single crystals under laser excitation

The way to determine the effective temperature of the excitonic system from the study of the edge luminescence high energy region is motivated. Experimental data on the exciton heating in ZnSe single crystals under laser excitation are presented. The effective temperature of excitons T_x has reached 158 K at the lattice temperature T_L = 77 and the peak excitation intensity 2.7 MW cm^?2 (hv₀ = 3.50), while the excess temperature of the excitons (T_x ? T_L) increases as a square root of the pump intensity. Exciton-hot-electron, exciton-hot-photon, exciton-exciton interactions and excitonic Auger process are considered as possible causes of the exciton system heating.     

Photoluminescence and photoconductivity of indium selenide single crystals doped with rare-earth elements

The paper discusses the results of the investigation of photolominescence spectra and photoconductivity spectral distribution of Nd-; Yb- and Er- doped InSe single crystals at 77 and 293 K. Rare-earth additions into InSe contributes to the appearance of new bands in the wavelength region 1.02÷1.06 mkm. The photoconductivity spectra obtained for the mentioned crystals at 77 and 293 K are given.     

Photoluminescence and EPR studies on gamma irradiated Ce doped potassium halide single crystals

Electron Paramagnetic Resonance(EPR), Photoluminescence(PL), Thermoluminescence (TL) and other optical studies of γ-irradiated KBr, KCl:Ce³⁺ single crystals. Cerium when doped into the KBr, KCl is found to enter the host lattice in its trivalent state and act as electron trap during γ-irradiation, thereby partially converting itself to Ce²⁺. The Photoluminescence(PL) spectra of both KCl and KBr crystals doped with Ce exhibit the strong blue emissions of Ce corresponding to ⁵d(²D)→²F_5/2 and ⁵d(²D)→²F_7/2 transitions. The defect centers formed in the Ce³⁺ doped KBr and KCl. Crystals are studied using the technique of EPR. A dominant TL glow peak at 374, 422 K and KCl:Ce³⁺ at 466, 475 K is observed in the crystal. EPR studies indicate the presence at two centers at room temperature. Spectral distribution under the thermoluminescence emission(TLE) and optically stimulated emission(OSL) support the idea that defect annihilation process to be due to thermal release of F electron in KBr, KCl:Ce³⁺ crystals. Both Ce³⁺ and Ce²⁺ emissions were observed in the thermoluminescence emission of the crystals.     

Scintillators based on LiF crystals doped with oxides of different metals

The reasons for degradation of spectral and kinetic characteristics of the activator luminescence of LiF crystals doped with oxides of different metals (Li₂O, WO₃, TiO₂, Fe₂O₃) have been analyzed.     

EPR and optical studies of Cu doped ammonium dihydrogen phosphate single crystals

Electron paramagnetic resonance (EPR) spectra of Cu²⁺ ion in ammonium dihydrogen phosphate are studied at liquid nitrogen temperature (77 K). Four magnetically inequivalent Cu²⁺ sites in the lattice are identified. The angular variation spectra of the crystal in the three orthogonal planes indicate that the paramagnetic impurity, Cu²⁺ enters the lattice substitutionally in place of NH₄⁺ ions. The spin Hamiltonian parameters are determined with the fitting of spectra to rhombic symmetry crystalline field. The ground state wave function of Cu²⁺ ion is constructed and found to be predominantly |x²-y²〉. The cubic field parameter (Dq) and tetragonal parameters (Ds and Dt) are determined from optical spectra at room temperature. By correlating EPR and optical absorption spectra, the bonding coefficients are calculated and nature of bonding of metal ion with different ligands in the crystal is discussed.     

Electroluminescent sources of light based on ZnSe: Mn single crystals with optimum brightness

Electroluminescent sources of light based on plastically deformed ZnSe: Mn single crystals are studied. It is shown that the emissivity of the electroluminescent sources depends on the manganese concentration and the part of a ZnSe: Mn boule from which a plane-parallel wafer is cut.     

EPR and optical absorption studies of X-irradiated cobalt doped sodium chloride crystals

Sodium chloride crystals containing small concentrations of cobalt (< 10 ppm) do not show any EPR line. A thick block of crystal containing ～25 ppm of Co showed two partially resolved lines, with approximate g-values 2.036 and 2.011. These g-values are not close to those of Co⁺⁺ (4.0 to 4.5) in other crystals. On X-irradiation, pure NaCl crystals show a complex EPR spectrum. X-irradiated Co doped NaCl crystals showed an EPR line superimposed on the complex EPR spectrum. Cobalt doped highly pure crystals, on X-irradiation, showed an EPR line superimposed on the F center EPR line. The g-value of the former is 2.049±0.002 and half width is 62±3 gauss. These results combined with those of dielectric loss and optical studies show that X-irradiation of Co doped crystals produces new centers, labelled as S centers, which produce a dielectric loss peak, a decrease in electrical conductivity, an optical band at 210 nm and the EPR line. Possible models of the S centers are discussed.     

Security devices based on liquid crystals doped with a colour dye

Liquid crystal properties make them useful for the development of security devices in applications of authentication and detection of fakes. Induced orientation of liquid crystal molecules and birefringence are the two main properties used in security devices.     

X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals

Si(As, P, B) and GaSb(Si) single crystals are used as examples to demonstrate the possibilities of methods of X-ray diffraction for the diagnostics (examination of a real structure) of highly doped semiconductor crystals. Prominence is given to characterizing the state of impurity: whether it is in a solid solution or at a certain stage of its decomposition. An optimum combination of X-ray diffraction methods is found to obtain the most complete information on the microsegregation and structural heterogeneity in crystals with low and high X-ray absorption. This combination is based on X-ray diffraction topography and X-ray diffractometry methods having an increased sensitivity to lattice strains.     

Uncooled temperature elements based on semiconductor crystals

The feasibility of fabricating InSb uncooled temperature-sensitive elements operating in the IR spectral range is considered. InSb electric parameters that are optimal for constructing bolometers with the highest possible sensitivity are evaluated. The results of computation are compared with the parameter values used in InSb temperature element prototypes.     

A comparative analysis of infra-red luminescence spectra of ZnSe crystals doped with Yb,Gd or Cr impurities

Infra-red (IR) photoluminescence (PL) spectra of ZnSe crystals doped with Yb, Gd rare-earth impurities and Cr impurity are investigated. The influence of stoichiometric deviation on the spectra is studied and the structure of complex IR PL bands is analysed. The good coincidence between the structures of IR PL spectra of the samples doped with Yb, Gd, and Cr is shown. Correlation between the component parts of the bands at 1 and 2 μm is found and possibility to control the composition of IR PL spectra by enrichment of the samples with Zn or Se is discussed. The models that explain the formation of complexes based on rare-earth and background Cr and Cu impurities, responsible for IR PL bands, are proposed. Keywords: IR luminescence, ZnSe, Rare-earth impurities, Cr impurity.     

Solid-state laser based on PMMA doped with Coumarin 540A

Solid-state dye laser materials based on polymethyl methacrylate (PMMA) doped with different concentrations of Coumarin 540A were prepared. The absorption, fluorescence and blue-green lasing spectra of the samples were obtained and studied in this latter. With the third harmonic generation (THG) of Q-switched Nd:YAG laser pumping the samples longitudinally, the highest slope efficiency is 12.8%, which is achieved in the sample with a dye concentration of 1.0×10^?3 mol/L.