Diode End-Pumped Passively Q-Switched Nd^3＋：GdVO4 Self-Raman Laser at 1176 nm

A compact diode-end-pumped passively Q-switched Nd^3＋ ：GdVO4/C^r4＋ ：YAG self-Raman laser at 1176 nm is demonstrated. When the To = 80% Cr^4＋：YAG saturable absorber is inserted into the cavity, the maximum Rtaman laser output reaches 175 mW with 3.8 W incident pump power. The optical conversion from incident to the Raman laser is 4.6% and the slope efficiency is 6.5%. The pulse energy, duration, and repetition frequency of the first stokes laser are 4.5μJ, 1.8 ns, and 38.5 kHz, respectively. There is strong blue emission （about 350- 400nm） can be observed in the Nd^3＋ ：GdVO4 crystal when the process of stimulated Raman scattering occurs, which is induced by the upconversion of the Nd^3＋ ions.     

Compact, Low Threshold Nd^3＋：YVO4 Self-Raman Laser at 1178 nm

A compact low-threshold Raman laser at 1178 nm is experimentally realized by using a diode-end-pumped actively Q-switched Nd^3＋ ：YVO4 self-Raman laser. The threshold is 370mW at a pulse repetition frequency of S kHz. The maximum Raman laser output is 182 m W with the pulse duration smaller than 20 ns at a pulse repetition frequency of 30kHz with 1.8 W incident power. The optical efficiency from the incident power to the Raman laser is 10% and the slope efficiency is 13.5%.     

High Power Continuous-Wave and Acousto-Optic Q-Switched Nd：GdVO4 Laser Operated at 912 nm

We present a high power and efficient operation of the ^4F3/2 → ^4I9/2 transition in Nd：GdVO4 at 912nm. In the cw mode, the maximum output power of 8.6 W is achieved when the incident pump power is 40.3 W, leading to a slope efficiency of 33.3% and an optical-optical efficiency of 21.3%. To the best of our knowledge, this is the highest cw laser power at 912nm obtained with the conventional Nd：GdVO4 crystal. Pulsed operation of 912nm laser has also been realized by inserting a small aeousto-optie （A-O） Q-Switch inside the resonator. As a result, the minimal pulse width of 20ns and the average laser power 1.43 W at the repetition rate of lOkHz are obtained, corresponding to 7.1 kW peak power. We believe that this is the highest laser peak power at 912nm. Furthermore, duration of 65ns has also been acquired when the repetition rate is 100 kHz.     

Passively mode-locked Nd：GdVO4 laser at 912nm

This paper demonstrates the passively mode-locked Nd：GdVO4 laser operating on the ^4F3/2-^4I9/2 transition at 912 nm by using a semiconductor saturable-absorber mirror for passive mode locking, stable continuous wave modelocked 912nm laser was achieved with a repetition rate of 176 MHz. At the incident pump power of 17.7W, 22.6mW average output power of stable mode-locked laser was obtained with a slope efficiency of 0.3%.     

激光二极管端面连续抽运的Cr^4＋：Nd^3＋：YAG微片激光器输出特性研究

报道了腔长为1．1mm的激光二极管端面抽运的Cr^4 ：Nd^3 ：YAG自调Q微片激光器，连续抽运下获得了平均功率为5—18mW、重复频率为1—10kHz的稳定的调Q激光脉冲输出序列。并且对微片激光器的调Q输出激光的单脉冲特性参量、重复频率以及抽运阈值功率等进行了理论研究，计算结果和实验结果比较吻合。     

Characteristics of Nd：GdVO4 Laser with Different Nd-Doping Concentrations

We report the properties of a compact diode-pumped continuous-wave Nd：GdV04 laser with a linear cavity and different Nd-doped laser crystals. In a 0.2at.% Nd-doped Nd：GdVO4 laser, 1.54 W output laser power is achieved at 912nm wavelength with a slope efficiency of 24.8% at an absorbed pump power of 9.4W. With 0.3at.% Nd-doping concentration, we can obtain the either single-wavelength emission at 1064nm or 912nm or the dual-wavelength emission at 1064nm and 912nm by controlling the incident pump power. From an incident pump power of 11.6 W, the 1064nm emission between ^4Fa/2 and ^4I11/2 is suppressed completely by the 912nm emission between ^4Fa/2 and ^4I9/2. We obtain 670 mW output of the 912nm single-wavelength laser emission with a slope efficiency of 5.5% by taking an incident pump power of 18.4 W. Using a Nd：GdV04 laser with 0.4at.% Nd-doping concentration, we obtain either the single-wavelength emission at 1064nm or the dual-wavelength emission at both 1064nm and 912nm by increasing the incident pump power. We observe a strong competition process in the dualavelength laser.     

Nd^3＋：YAG激光的光纤传输

首先叙述了光纤传输Nd^3 ：YAG激光的优点，接着分析了不同光纤和其传输Nd^3 ：YAG激光的特点。然后通过对光纤传输系统各部分的分析与设计，结合实际，设计了光纤耦合机构。最后，对来自于工件反射光问题提出了解决方案。     

Cr4＋：Nd3＋：YAG自调Q陶瓷激光器输出特性的计算分析

利用Siegman速率方程组，采用自适应变步长龙格一库塔数值方法，对Cr4＋：Nd3＋：YAG自调Q陶瓷激光器的输出特性进行了数值模拟，详细讨论了Nd3＋：YAG陶瓷厚度以及Cr^4＋离子浓度对陶瓷激光器的重复频率、峰值功率、单脉冲能量、脉冲宽度、以及平均输出功率等输出特性的影响。研究结果表明，随着参与作用的Nd^3＋离子数的增加，输出激光脉冲重复频率和平均输出功率均会明显提高；随着Cr^4＋离子浓度的升高，输出激光脉冲重复频率和平均输出功率则会明显下降。     

High-Power Nd：GdVO4 Innoslab Continuous-Wave Laser under Direct 880 nm Pumping

A high-power cw end-pumped laser device is demonstrated with a slab crystal of Nd：GdVO4 operating at 1063nm. Diode laser stacks at 880nm are used to pump Nd：GdVO4 into emitting level 4^F3/2. The 149 W output power is presented when the absorbed pump power is 390 W and the optical-to-optieal conversion efficiency is 38.2%. When the output power is 120 W, the M^2 factors are 2.3 in both directions. Additionally, mode overlap inside the resonator is analyzed to explain the beam quality deterioration.     

The mechanism research of the Cr^4＋Nd^3＋：YAG laser

The 946nm diode-pump microchip self-Q-switched laser of a chromium and neodymium codoped yttrium aluminum garnet crystal material (Cr^{4+}Nd^{3+}:YAG) is studied, especially about its physical mechanism of operation. The {}^4F_{3/2}→{}^4I_{9/2} transition of Nd^{3+} ion is beneficial to achieving laser oscillation in a quasi-three-level system based on coating the cavity mirrors of the microchip with films that suppress the 1064nm operation and enhance the 946nm laser. The Cr^{4+} ion is a saturable absorber. The initial loss N_{t1} is high, which acts as the threshold for laser oscillation. The stable loss N_{t2} is low because the Cr^{4+} ion is acceleratively bleached by the fast enhancement of the oscillating laser. The high N_{t1}, small N_{t2} and fast progresses permit the oscillating laser of the Cr^{4+}Nd^{3+}:YAG to have a good self-Q-switched property whose full width at half maximum is about 4.2ns. Its highest laser power is about 5.7mW. Its peak power is about 150W. Its good fundamental transverse TEM_{00} mode results from the absorption bleaching established by both the pump and oscillating lasers, which suppress other transverse mode and allow the oscillation only in the fundamental transverse TEM_{00} mode.     

Optical parameters and energy levels splitting of Ho^3＋ in Ho^3＋： GdVO4

Ho^3＋ ： GdVO4 is a new laser material suitable for high-power laser systems. In this paper we measure the absorption spectra of Ho^3＋ in the sample Ho^3＋： GdVO4. The intensity parameters are calculated by using the Judd-Ofelt theory. Some predicted spectroscopic parameters, such as the spontaneous radiative transition rate, branching ratio and integrated emission cross section are dealt with. And we also compare the optical parameters with those of other materials. From these results, it is found that there are many transitions which have large oscillator strengths and large integrated emission cross sections. Especially the transitions such as ^5 F4 → ^5 I 8, ^5 S2→^5 I8, ^5 F5 → ^5 I8 and ^5 I7 →^ 5 I8 are useful in solid-state lasers and other fields. Finally, we discuss the splitting of the energy levels of Ho^3＋ in the crystal GdVO4 based on the group theory.     

High-power diode-end-pumped CW Nd:GdVO4 laser

We report on a high-power diode-end-pumped CW Nd:GdVO₄ laser. Under the pump power of 39.5 W, a maximum output power of 19.8 W and a slope efficiency of 58.5% were obtained. The beam quality M² at maximum output power was measured to be around 2.62. The thermal focal length in Nd:GdVO₄ crystal under the pump power from 22 to 40.6 W was measured. The pump-induced damage threshold was estimated to be 28.6 kW/cm².     

自受激拉曼晶体Nd3+:SrMoO4的光谱性质研究

通过拉曼散射光谱，吸收光谱，荧光发射寿命和808 nm LD激发下的红外荧光光谱的实验测量，系统研究了Nd³⁺:SrMoO₄晶体的自受激拉曼光谱性质.分析指认了拉曼散射光谱中各拉曼峰所对应的晶格振动模式，得出了其SRS活性最强的声子频率约为898 cm^-1，对应于(MoO^2-₄)离子团的完全对称光学伸缩振动A_g模；通过J-O理论对晶体的吸收谱进行了全面的光谱参数计算，得出⁴F_3/2→⁴I_11/2跃迁的积分发射截面达0.57×10^-18 cm²，自发辐射概率为141.06 s^-1；同时，实验测得该跃迁的荧光发射寿命约为0.2 ms.最后，结合808 nm LD激发下的红外波段荧光光谱，论证了SrMoO₄晶体中Nd³⁺离子1068 nm发射通过拉曼频移获得1180 nm一级斯托克斯激光发射的可能性，为Nd³⁺:SrMoO₄晶体的自受激拉曼激光器研究提供了理论依据. 关键词： 3+离子')" href="#">d³⁺离子 4 晶体')" href="#">SrMoO₄ 晶体 自受激拉曼散射     

High-power end-pumped CW Nd:GdVO4 laser formed with a flat–flat cavity

Formed with a flat–flat resonator, a diode-laser-array end-pumped CW Nd:GdVO₄ laser at 1.06 μm, capable of generating 8.6 W of TEM₀₀ output power with optical conversion efficiency of 43% and slope efficiency of 48%, has been developed. The laser beam was nearly diffraction limited, with the beam quality factor measured to be M²=1.22. Under the conditions of multi-mode operation, the laser was able to produce 11.2 W of low-order transverse mode radiation (M²<2) at the incident pump power of 22 W, giving an optical conversion efficiency of 51%, and a slope efficiency of 55%.     

High-power continuous-wave Nd:GdVO4 slab laser pumped directly into the F3/2 emitting level

95.6 W continuous-wave laser power output in 880 nm LD partially end-pumped Nd:GdVO₄ slab laser with a hybrid resonator is presented. The slope efficiency and optical-to-optical efficiency were 46.5% and nearly 42.6%, respectively. At the output power of 82 W, beam quality M² factors were 1.1 in the unstable direction and 1.36 in the stable direction, respectively.     

Optical parameters of Nd3＋：Er3＋：yb3＋ co-doped borosilicate glasses and their energy transfers at high temperature

This paper reports that a series of Nd³⁺:Er³⁺:Yb³⁺ co-doped borosilicate glasses have been prepared and their absorption spectra measured. The J--O intensity parameters Ω_k (k=2, 4, 6), spontaneous radiative lifetime τ_rad, spontaneous transition probability A, fluorescence branching ratio β and oscillator strength f_ed of the Nd³⁺ ions at room temperature are calculated based on Judd--Ofelt (J--O) theory. The temperature dependence of the up-conversion photoluminescence characteristics in a Nd³⁺:Er³⁺:Yb³⁺ co-doped sample is studied under a 978 nm semiconductor laser excitation, and the energy transfer mechanisms among Yb³⁺, Er³⁺ and Nd³⁺ ions are analysed. The results show that the J--O intensity parameters Ω₂ increase when the Nd³⁺ concentration of the Nd³⁺:Er³⁺:Yb³⁺ co-doped borosilicate glasses increases. The possibility of spontaneous transition is small and lifetimes are long at levels of ⁴F_5/2 and ⁴F_3/2. The intensity of Nd³⁺ emissions at 595, 691, 753, 813 and 887 nm are markedly enhanced when the sample temperature exceeds 400 K. The reasons being the cooperation of the secondary sensitization from Er³⁺ to Nd³⁺ and the contribution of a multi-phonon.     

Laser diode pumped actively Q-switched Nd:GdVO4 self-Raman laser operating at 1173 nm

A laser diode pumped actively Q-switched Nd:GdVO₄ self-Raman laser operating at 1173 nm is presented. The maximum output power was 2.26 W at an incident pump power of 18 W, with the corresponding optical conversion efficiency of 12.6%. Two different resonator configurations were investigated in order to achieve high output power and efficiency.     

LD-pumped actively Q-switched Nd:GdVO4/KTP red laser

LD-pumped actively Q-switched intracavity frequency-doubled Nd:GdVO₄/KTP red laser has been introduced. A maximum red average output power of 0.78 W at 671 nm was obtained at pulse-repetition frequency (PRF) of 15 kHz and the optical conversion efficiency was 6.5%. At the incident pump power of 12 W, the shortest laser pulse occurred at PRF of 15 kHz. Its full-width at half-maximum and the highest peak power were measured to be 35.8 ns and 3.38 kW. The largest single pulse energy of 56.3 μJ was achieved at PRF of 10 kHz. The influence factors on the Q-switched Nd:GdVO₄/KTP red laser have been discussed.     

High power diode-pumped passively Q-switched and mode-locking Nd:GdVO4 laser at 912 nm

A high power diode-end-pumped passively Q-switched and mode-locking (QML) Nd:GdVO₄ laser at 912 nm was demonstrated for the first time, to the best of our knowledge. A Z-type laser cavity with Cr⁴⁺:YAG crystals as the intracavity saturable absorber were employed in the experiments. Influence of the initial transmission (T_U) of the saturable absorber on the QML laser performance was investigated. Using the T_U = 95% Cr⁴⁺:YAG, as much as an average output power of 2.0 W pulsed 912 nm laser was produced at an absorbed pump power of 25.0 W, then the repetition rates of the Q-switched envelope and the mode-locking pulse were ~ 224 kHz and ~ 160 MHz, respectively. Whereas the maximum output power was reduced to 1.3 W using the T_U = 90% Cr⁴⁺:YAG, we obtained a 100% modulation depth for the mode-locking pulses inside the Q-switched envelope.