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1.
We describe the results of a numerical code which models the relativistic selffocussing of high-intensity laser beams in plasmas by the nonlinear relativistic dependence of the optical constants on laser intensity. The plasma dynamics of 1013 W Nd glass lasers of 30 m initial beam diameter in nearly cut-off density plasmas is followed for a few picoseconds interaction time and 25 m depth into the plasma. Rapid relativistic selffocussing down to a beam diameter of one micron in a distance of the order of the original beam diameter is observed, as well as the production of GeV ions moving against the laser light.  相似文献   

2.
The evolution of current-driven thin single Al wire plasmas was studied with soft X-ray shadowgraphy and interferometry using a very compact capillary discharge-driven =46.9 nm laser probe. Wires of 25 m diameter excited by current pulses with a 78 A/ns increase rate were observed to expand uniformly at a rate of 3.5 m/ns. In contrast, an increase in the rate of energy deposited per unit mass was observed to give rise to significant early plasma instabilities. The results illustrate the use of table-top soft X-ray lasers as a new tool for the diagnostics of dense pulse power driven plasmas. PACS 52.70.Kz; 52.59.Qy; 52.25.Vy; 52.50.Nr  相似文献   

3.
The absorption of laser light in 0.25–1 mm diameter gold cavities, irradiated for the purpose of generating high-temperature blackbody radiation with intense laser radiation of either =0.44 m or =1.3 m wavelength, was investigated. For =0.44 m radiation the absorption exceeded 0.9 for all conditions, but dropped to only 0.3 for the smallest cavities irradiated at =1.3 m. Entrance hole and cavity filling with plasma seems important for the understanding of the observations.  相似文献   

4.
We present the results of experimental determination of the coefficients of laser radiation reflection (1 10.6 m and 2 1.06 m) from dielectric targets of complex chemical composition in vacuum with allowance for a regime of developed plasma formation.  相似文献   

5.
Conversion electron Mössbauer spectroscopy (CEMS) has been used to investigate nitride formation in AISI-H13 tool steel after treatment by plasma immersion ion implantation (PI3) at 350 °C. With only slight variation in the plasma conditions, it is possible to influence the kinetics of nitride precipitation so as to obtain nitrogen concentrations that range from those associated with -Fe2N through -Fe3N to -Fe4N. The CEMS results enable a more definite identification of the nitrides than that obtained by glancing-angle X-ray diffraction and nuclear reaction analysis alone.  相似文献   

6.
The paper discusses some of the ways in which to avoid difficulties in applying dispersion relations to experimental data of the optical constants of solids, particularly with regard to measurements in a narrow frequency range.
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7.
The Suzuki model of regions with a hyperstructure was verified, the dependence of their size on the cooling rate was found and it was determined that they disappear at temperatures between 250° and 300°C according to their composition. Up to 1000 Å their structure is coherent with a matrix lattice and their formation is not accompanied by a decrease in the primary extinction. Regions above 1000 Å are partially incoherent and their formation and disappearance are apparent by a change in the primary extinction.
NaCl-CdCl2
, , , 250°–300°C . , 1000 Å, . , 1000 Å, .


The author would like to thank I. Kunzlová, and M. Lébl for preparing the crystals of NaCl-CdCl2 solid solution and Dr. Trnka for determining the cadmium Concentration in them.  相似文献   

8.
9.
The change in frequency of quartz piezoelectric resonators in a d-c electric polarizing field cannot be explained merely by a change in the dimensions of the resonator due to the polarizing field caused by the inverse piezoelectric effect and electrostriction. We are forced to admit that the elastic constants also change in a polarizing field. A phenomenological interpretation of the influence of a d-c electric polarizing field on the frequency of quartz resonators is proposed here, based on newly introduced quantities characterizing such a change. In conclusion it is shown in what way the quantities, on which the phenomenological theory is based, can be determined experimentally.
, . , . , , . , , .


The author would like to thank Dr. J. Tichý for carefully reading the paper, for valuable discussion and numerous remarks on style and subject matter, which greatly helped to improve the text. He is also indebted to V. Janovec, C. Sc., for some new aspects and the exceptional interest with which he reviewed the paper.  相似文献   

10.
The paper discusses the absorption of the energy of a high-frequency field by a magnetic sample from the point of view of the interaction of spin waves with photons and spin waves amongst themselves. A general expression for the form of the absorption curve is derived, using the method known from the quantum theory of radiation and assuming very weak fields.
. , , .


The author thanks S. Krupika, Candidate of Sciences, for the exceptional interest taken in this work, for advice and a number of helpful and critical remarks.  相似文献   

11.
Coherent vacuum ultraviolet (VUV) radiation was generated by four-wave difference frequency mixing (VUV=212) of pulsed dye laser radiation in carbon monoxide (CO). The frequency 1 was tuned to the C 1+(=0)X 1+(=0) two-photon transition, while the dye laser frequency 2 was scaned around 17650 cm–1 which corresponds to the A 1(=7)«C 1+(=0) transition energy. The VUV intensity was found to be strongly wavelength dependent. The analysis of the spectrum revealed (i) that the VUV intensity was enhanced by the rotational levels of the A 1(=7) state and (ii) that the off-resonance excitation in the C 1+(=0)X 1+(=0) two-photon transition greatly contributed to the present four-wave mixing process. The effects of pumping laser detuning, saturation and foreign gases are briefly discussed.  相似文献   

12.
A detailed analysis of the dependence of the surface recombination velocitys on the surface potential s leads to the conclusion that the position of the surface recombination level with respect to the centre of the energy gapE t -E i does not coincide with the valueq s *, while the surface recombination velocitys decreases to half its maximum value. The difference between the two quantities is negligible only when the width of the curves( s ) between the points corresponding to the valuess=1/2s max is greater than 8kT.
s s , E t -E i s , s . , s( s ) , s=1/2s max, 8kT.
  相似文献   

13.
The paper derives a general formula for the scattering of electromagnetic (or sound) waves from a periodic, perfectly conducting (or perfectly rigid) surface. No restrictions are imposed on the angle of incidence, the size of the surface or the degree of roughness. Except for the basic Kirchhoff approximation, the method is exact. The results confirm, generalise or correct special cases obtained by more complicated methods.
, ( ) . , . . , , .
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14.
Zusammenfassung In dieser Arbeit werden die Erscheinungen der normalen und anomalen, durch Infrarotstrahlung verursachten und von uns schon früher an diesen Photokatoden beobachteten Ermüdung von Silber-Cäsium-Photokathoden untersucht. Diese Erscheinungen wurden an durchsichtigen sowie undurchsichtigen, durch verschiedene Technologien zubereiteten Photokathoden festgestellt. Es wurden Messungen der Strahlungsintensitäts-, Temperatur- und Spektralverteilungsabhängigkeit der normalen und anomalen Ermüdung durchgeführt. Es werden die Ursachen der Unübereinstimmigkeit im Vergleich mit Arbeiten von De Boer und Teves besprochen. Ferner wurden die Zeitverläufe der Ermüdung bei der Abwechslung der Bestrahlungs- und Dunkelzyklen studiert.
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, , . , . , . . .
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15.
The influence of weak ultra-violet irradiation on the brightness waves of electroluminescence is investigated for two types of ZnS-Cuphosphors. The observed effects (increase in brightness in the primary peak and its phase shift, the disappearance of the secondary peak) are explained on the basis of present-day conceptions on electroluminescence.
ZnS-Cu
ZnS-Cu. ( , ) .
  相似文献   

16.
The influence of a small electric perturbation of variable phase on the brightness wave of alternating electroluminescence of ZnS-Cu is investigated. The results are compared with the model described in [1]. The increase in the number of ionized activators after switching on the electric field is studied and is found to reach equilibrium. after about 50 to 150 sec.
ZnS-Cu
ZnS-Cu. , [1]. , 50–150 s.


In conclusion the author thanks M. Mokonová for cooperation in evaluating the results of measurement.  相似文献   

17.
A new method is proposed for calculating the energy in certain special points of the Brillouin zone. The wave functions of valence and conduction electrons are given in the form of the linear combination of plane waves and the orthogonality condition of these functions to the wave functions of lower states is replaced by the repulsive potential. The practical application of this very simple method is illustrated on the energy spectrum of silicon in the centre of the Brillouin zone. It is proved that the results are comparable with some other methods, e. g. the orthogonalized plane-wave method.
. . . , , .


The basic thesis of this paper, together with concrete calculation of the energy spectrum of diamond, was delivered at the Czechoslovak-Polish conference in Sopoty in November 1956.

In conclusion the autor would like to thank K. Trnková for carrying out the numerical calculations.  相似文献   

18.
Silicon nitride (SiNx) thin films of various stoichiometries (x) were prepared on Si (100) substrates applying the Nd:YAG (=1064 nm) pulsed laser deposition (PLD) process in the shaded off-axis technique at room temperature. The specific arrangement of this technique with perpendicular target (Si) and substrate surfaces and a metallic screen in between guarantees very low particulate (droplet) deposition and, thus, excellent surface qualities. Compared to the usually used on-axis deposition technique consisting of a parallel arrangement of the target and substrate surface, the coating surface covered with particulates is about 100 times lower reaching a maximum of 0.2% on 400 nm thick films. The variation the N2 partial pressure affects the nitrogen content and the silicon bonding structure of the films analysed by means of SIMS and XPS, respectively. As a consequence the optical properties (e.g.m refractive index) are tailorable in a wide spectral range between 250 and 1200 nm. PACS 81.15.Fg; 78.20.Ci  相似文献   

19.
Zusammenfassung Die spektrale Abhägigkeit der photodielektrischen Eigenschaften der lumineszierenden Zinkkadmiumsulfide verschiedener Zusammensetzung zeigt, da eine Beimengung von Kupfer das Eintreten von Zuständen mit groer Polarisierbarkeit hervorruft, die eine Änderung der realen Komponente der Dielektrizitätskonstanten zur Folge haben. Die Kupferkonzentration kann dabei so gering sein, da sie in der Lumineszenzemission gar nicht zur Geltung kommt. Die Infrarotmaxima der Verluste entsprechen Niveaus, die von anderen Autoren und mit anderen Methoden festgestellt wurden. Das Maximum des Exzitationsspektrums im Bereiche des Ausläufers der Absorptionskante hängt mit dem Maximum der Änderung der realen Komponente der Dielektrizitätskonstante zusammen.
-
- , , . , . , . .


Nunmehr im Physikalischen Institut der Karlsuniversität, Prag.  相似文献   

20.
Transparent conducting SnO2 thin films with a thickness between 1000–2000 Å were deposited on glass, quartz and silicon substrates using standard pulsed laser deposition techniques with two different targets (Sri and SnO2) and with three different laser wavelengths (1.06, 0.532 and 0.266 ) from a Q-switched Nd: YAG laser. Tin dioxide films with optical transmission over most of the visible spectrum exceeding 80% were obtained using a Sn target and a background oxygen pressure of 20 Pa. The electrical resistivity () depended strongly on the substrate temperature during deposition, with the lowest values of of about 10–2 -cm obtained when the substrate was maintained at 400°C during deposition. Using SnO2 targets, predominantly amorphous phase SnO2 films were deposited on Si substrates and then transformed into polycrystalline Sn3O4 by laser induced crystallization ( = 1.06 m). Whereas these later films were essentially non-conducting as deposited ( > 400 -cm), the electrical resistivity was permanently reduced after laser induced crystallization by a factor greater than 1000 to a value of approximately 4 × 10–1 -cm.  相似文献   

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