分数维方法研究GaAs薄膜中的极化子

本文采用分数维方法, 在讨论Al_0.3Ga_0.7As衬底上GaAs薄膜的分数维基础上, 计算了GaAs薄膜中的极化子结合能和有效质量. 随着薄膜厚度的增加, 极化子结合能和质量变化单调地减小. 当薄膜厚度L_w<70 Å并且衬底厚度L_b<200 Å时, 衬底厚度的变化对薄膜中极化子的结合能和质量变化的影响比较显著, 随着衬底厚度的增加, 薄膜中极化子的结合能和质量变化逐渐变大; 当薄膜厚度L_w>70 Å或者衬底厚度L_b>200 Å时, 衬底厚度的变化对薄膜中极化子的结合能和质量变化的影响不显著. 研究结果为GaAs薄膜电子和光电子器件的研究和应用提供参考. 关键词： 分数维方法 GaAs薄膜 极化子 低维异质结构     

EAST快速极紫外光谱仪波长的原位标定及其应用

介绍了东方超环(experimental advanced supereonducting tokamak, EAST)托卡马克上的两套快速极紫外（EUV）光谱仪系统波长的原位标定方法、结果及其应用。这两套谱仪均为掠入射平场谱仪，时间分辨均为5 ms·frame-1。两套谱仪分别工作在20～500和10～130 Å的波段范围，由步进电机控制探测器在焦平面上移动实现整个观测波段上的波长扫描。利用这两套谱仪系统观测极紫外波段光谱，计算EAST中低-高Z杂质离子特征线辐射强度随时间的演化，监测和研究等离子体中杂质的行为。高Z杂质尤其是钨、钼等金属元素，发出的EUV波段光谱的构成非常复杂，准确识谱对谱仪精确的波长测量能力以及谱分辨能力要求很高，因此精确的波长标定是识别钨、钼等高Z杂质谱线以及研究它们行为的最关键的技术之一。利用EAST等离子体中类氢到类铍的低、中Z杂质的特征谱线以及它们的二阶甚至三阶谱线，结合谱仪系统的色散能力，对这两套快速极紫外光谱仪的波长进行了精确的原位标定。用于波长标定的杂质谱线有O Ⅷ 18.97 Å，O Ⅶ 21.60 Å，C Ⅵ 33.73 Å，Li Ⅲ 113.9 Å，Li Ⅲ 135.0 Å，Li Ⅱ 199.28 Å，Ar ⅩⅤ 221.15 Å，He Ⅱ 256.317 Å，He Ⅱ 303.78 Å，Ar ⅩⅥ 353.853 Å及C Ⅳ 384.174 Å等。利用波长标定的结果对观测到的EUV光谱进行谱线识别，两套谱仪观测到的绝大多数谱线波长与美国技术标准局(National Institute of Standards and Technology, NIST)数据库的标准波长相差分别小于0.08和0.03 Å。开发了谱仪波长原位标定程序模块，将这个模块内嵌到谱仪数据实时上传的交互式软件中，实现了全谱数据以及特征谱线强度随时间演化数据的实时处理和上传。同时利用开发的全谱分析交互式软件以及EAST上的数据查看软件，最终实现了快速EUV谱仪自采数据的准实时分析、读取和查看。     

Synthesis,Growth and Spectroscopic Studies of Piperazinium Paranitrophenolate Monohydrate Crystals

A new piperazinium 4-nitro phenolate monohydrate single crystal (PNP) was grown by employing the solution growth technique piperazine and 4-nitrophenol, were the source material used for the growth, acetonitrile is used as solvent. The grown crystal was characterized by Single X-ray analysis and it shows that piperazinium 4-nitrophenol monohydrate crystallizes in the monoclinic space group P2 1/c, with cell parameters a=10.902 5(4) Å, b=6.226 1(3) Å, c=14.031 8(5) Å, and z=4. The lattice parameters of the substances were also determined by using powder diffraction methods. The functional groups are identified by using FTIR spectral analysis. The absorbance of title compound were analyzed using UV-Vis spectra. The thermo analytical properties of the crystal were studied using TG, DTA.     

碳纳米管光学天线的有效波长和谐振特性

将经典金属自由电子气模型应用于金属型碳纳米管, 基于光学天线有效波长理论, 得出了金属型碳纳米管光学天线响应的有效波长与碳纳米管介电特性之间的普适关系. 在对碳纳米管介电特性进行第一性原理计算的基础上, 以金属型4 Å碳纳米管为例, 进一步研究了金属型碳纳米管光学天线响应的有效波长与入射波长之间的关系, 以及金属型碳纳米管光学偶极子天线的谐振特性. 通过将已有传统金属光学天线和碳纳米管天线有效波长的研究结果进行对比, 验证了本文理论的正确性. 结果表明, 碳纳米管光学天线响应的有效波长与入射波长呈近似线性关系, 与传统金属材料构成的同直径光学天线相比, 碳纳米管天线显示出了更强的波长压缩能力, 并且在可见光到红外波段内易于发生谐振. 该研究方法可为碳纳米管光学天线研究提供新的思路.     

一个镍(Ⅱ)配合物的合成、晶体结构及其与鲱鱼精DNA/BSA作用的光谱学研究

合成了配合物[Ni(2,2′-biby)(H₂O)₄]·(Htba)₂·5H₂O单晶,分子式中2,2′-biby为2,2′-联吡啶,H₂tba为2-硫代巴比妥酸。通过红外光谱、元素分析和单晶X-射线衍射表征其结构,单晶X-射线衍射结果表明,该配合物单晶属于正交晶系,Pbca 空间群,晶胞参数为a=13.662(2) Å,b=19.470(4)Å,c=21.590(4) Å。应用紫外光谱和荧光光谱研究了其与鲱鱼精DNA/牛血清白蛋白(BSA)的相互作用,研究结果表明,标题化合物与DNA为静电结合,对牛血清白蛋白发生静态猝灭作用。     

Coarse and Fine Control of the EPR Frequency of a Loop-Gap Resonator Using a Single-Turn Coil with a Varactor Diode Attached

Coarse control and fine control of the resonant frequency of a loop-gap resonator (LGR) operating at an electron paramagnetic resonance (EPR) frequency of ca. 650 MHz were achieved using a single-turn coil with a varactor diode attached (a frequency shift coil). When the distance between the LGR and the frequency shift coil was changed from 15 to 10 mm under the condition of constant voltage to the varactor diode (0 V), a shift of the resonant frequency of the LGR of ca. 20 MHz was observed (coarse frequency control). When the voltage applied to the varactor diode was changed from 0 to 15 V at the same distance between the LGR and the frequency shift coil (10 mm), a shift of the resonant frequency of the LGR of ca. 200 kHz was observed (fine frequency control). There were no significant changes in sensitivity of EPR measurements of a phantom (comprised of agar with a nitroxide radical and physiological saline solution) without and with the frequency shift coil. The EPR sensitivity did not change discernibly when the resonant frequency was shifted by the frequency shift coil. Furthermore, radio-frequency phase adjustment for homodyne detection could be performed by using the frequency shift coil without applying frequency modulation to the carrier wave.     

二维镨-镉异核金属配合物的水热合成、晶体结构及谱学性能研究

利用水热合成法,以柔性的乙二胺四乙酸（H₄EDTA）为配体、氧化镨以及氯化镉为金属源合成了一种镨-镉异金属-有机配合物[Pr₂Cd₃(EDTA)₃(H₂O)₁₁]·14H₂O （1）。通过X射线单晶衍射确定化合物1的结构,该化合物属单斜晶系的C2空间群,a=16.154(3) Å,b=14.863(3) Å,c=14.875(3) Å,β=115.855(3)°,V=3214.2(9) Å3, Z=2,化合物1的结构中存在纳米尺寸大小的“心形”Pr₆Cd₆O₁₂轮簇。其中Cd2+的配位数为7,采取单帽三棱柱的配位构型,而Pr3+采取十配位双帽四方反棱柱的构型。EDTA4-配体的四个羧基全部去质子化,与一个Cd2+和两个Pr3+配位,其中4个羧基氧原子和2个氮原子都与Cd2+配位,两个羧基分别桥连1个Pr3+。Pr3+和Cd2+通过μ₂-O氧原子交替连接形成Pr₆Cd₆O₁₂轮簇,每个Pr₆Cd₆O₁₂轮簇与附近的6个Pr₆Cd₆O₁₂轮簇共边连接,从而形成一个二维（6, 3）层状结构。二维层再通过…AAA…类型的堆积方式形成三维超分子结构。游离水分子填充在二维层空隙中,与羧基以及配位水分子之间形成比较强的O-H…O氢键,这些氢键有利于结构的稳定。通过热重分析、稳态荧光光谱、热微扰二维红外相关光谱（2D-IR COS）、固体紫外-可见漫反射光谱等手段进一步对化合物1的谱学性能进行表征。在红外光谱上,由于存在大量的氢键,化合物的红外光谱在3 680～2 640 cm-1波数范围内出现宽而强的吸收谱带。同时配体H₄EDTA中的羧基脱去了质子氢,并且与金属离子发生配位,因此化合物1中羧基的C=O双键的伸缩振动吸收峰与未配位配体中的C=O双键的伸缩振动吸收峰相比,向低波数移动,在1 527 cm-1波数处出现吸收峰。固体荧光测试显示在325 nm的紫外光照射下,配合物1能发出强的360 nm左右的荧光,主要是由能量在Cd2+和EDTA4-之间发生明显的LMCT跃迁转移引起的,因此化合物1可作为一类潜在的发光材料。热微扰下的二维红外光谱显示,由于水分子与羧基及水分子之间存在氢键,使得O-H的伸缩振动吸收峰对热的微扰响应比较敏感。紫外-可见光谱测试显示化合物1在位于216 nm处出现很强的紫外吸收峰,归属于化合物1中EDTA4-配体的中n→σ*跃迁及π→π*,位于444, 468和484 nm的弱吸收峰,归属为Pr3+的f-f跃迁。     

A Semiconductor Waveguide-Type Optical Frequency Shifter

A waveguide-type optical frequency shifter based on a rotating half-wave plate is proposed. The underlying principle can be used to realize a bit-rate-free and modulation-code-free optical frequency shifter. The waveguide was formed along the ≪1 1 1> direction on a GaAs (1 1 0) substrate by molecular beam epitaxy (MBE) and reactive ion beam etching (RIBE). A 10-MHz optical frequency shift with 16 V_p-p applied voltage and 22.5% shift efficiency is demonstrated.     

Direct observation of the saturation of stimulated Brillouin scattering by ion-trapping-induced frequency shifts

We report the first measurement of the saturation of stimulated Brillouin scattering (SBS) by an ion-trapping-induced frequency shift, which was achieved by directly measuring the amplitude and absolute frequency of SBS-driven ion-acoustic waves (IAW). A frequency shift of up to 30% and a simultaneous saturation of driven IAW and SBS reflectivity were observed. The scaling of the frequency shift with the IAW amplitude compares well with theoretical calculations. We have further measured fast 30 ps oscillations of the SBS-driven IAW amplitude induced by the frequency shift.     

2,7-二辛基[1]苯并噻吩并[3,2-b]苯并噻吩/Ni(100)的界面能级结构随薄膜厚度的演化

利用紫外光电子能谱、X射线光电子能谱以及原子力显微镜系统研究了2,7-二辛基[1] 苯并噻吩并[3,2-b]苯并噻吩(C8-BTBT)生长在单晶Ni(100)上的能级结构随着薄膜厚度的演化以及薄膜的生长方式. 发现第一层C8-BTBT平躺生长且与Ni基底发生了化学吸附反应. 从第二层起分子直立生长且呈现岛状生长模式. 这种平躺至直立的分子取向转变, 导致薄膜的能级结构在第一层与第二层间发生阶梯式的变化, 真空能级与最高占据能级同步下降. 此后能带结构随着薄膜厚度的增加逐渐向下弯曲, 功函数随着膜厚的增加而减小. 同时还发现由于直立生长的C8-BTBT其层间电导率较差导致实验中的能级未能收敛. 实验结果提示对基于Ni和C8-BTBT的自旋器件需要插入缓冲层并尽可能减少C8-BTBT的层数.     

Absolute spectral distribution of soft X-ray emission from laserproduced gold plasma

Quantitative measurement of spectral distribution of soft X-ray emission from laser produced plasmas and estimation of X-ray conversion efficiency are reported. The X-ray emission from planar gold target irradiated by an Nd:glass laser was recorded using a high resolution transmission grating spectrograph. Spectral distribution of X-ray intensity was derived using calibrated film data and a deconvolution procedure to account for contribution of higher diffraction orders. Results of conversion efficiency per unit solid angle, at a laser intensity of ~4×10¹² W/cm² (λ_L = 1.054 μm), for 10< λ <80 Å and in the water window spectral region (23< λ< 44 Å) are presented. A three-fold increase in conversion efficiency was observed for second harmonic laser irradiation (λ_L = 0.527 μm) at an intensity of 8×10¹² W/cm²     

用于GPPD谱仪的大面积闪烁体中子探测器性能测试

中国散裂中子源（Chinese Spallation Neutron Source,CSNS）的建成为中子散射技术的发展和应用奠定了基础。通用粉末衍射谱仪（general purpose powder diffractometer,GPPD）是CSNS一期建设的三条谱仪之一。研制了用于GPPD的大面积闪烁体探测器阵列,在CSNS的BL20中子束线上开展了探测器关键性能参数的实验测试。测试结果显示,对波长为1.4 Å和2.8 Å的中子,其探测效率分别为（38.5±1.7）%和（56.1±1.1）%,模拟与实验相结合,给出对2 Å的中子,其探测效率约为（46.1±2.0）%,有效面积内的探测效率不均匀度约为19.6%,经优化后可以降低到14.9%;探测器位置分辨可以达到4.0 mm×4.0 mm,最高计数率约79 kHz。探测器单元的整体性能指标能满足GPPD的物理需求。     

Frequency shifts of cantilever in AFM

The frequency shift and frequency shift image of cantilever in AFM have been studied by numerical integration of the equation of motion of cantilever for silicon tip with rutile TiO₂(0 0 1) surface in UHV conditions and by the Hamaker summation method for the tip-surface interaction forces. The effects of the excitation frequency at the cantilever base and the equilibrium position of the tip on the frequency shift have been calculated and the results showed the same phenomena as those measured, e.g., the frequency shift increased dramatically or rapidly before the contact point and was then almost level off after the contact point. The effects of scanning speed and the initial closest distance of tip to the contact point have been calculated at different excitation frequencies at the cantilever base and the results showed that proper frequency shift image could be obtained either by noncontact mode at the excitation frequency slightly less than the resonance frequency of free cantilever, or by tapping mode at the excitation frequency a few times smaller than the resonance frequency of free cantilever.     

Anomalous frequency shift of negative muon spin precession in n‐type silicon

The dependence of the residual polarization of negative muons in n‐type Si with impurity concentration (1.6\pm 0.2)\times 10¹³\ cm^-3 on temperature in the 10–300 K range has been investigated. Measurements were carried out in external magnetic field of 0.08 T transverse to the muon spin. Muon spin relaxation and frequency shift were observed at temperatures below 30 K. The relaxation rate at 30 K is equal to 0.25\pm 0.08\,μ s^-1. The frequency shift at 20 K is equal to 7\times 10^-3. Both the relaxation rate and the frequency shift grow with decrease of temperature. Below 30 K the relaxation rate is well described by the dependence \varLambda=bT^-q, where q=2.8. An analysis of present and earlier published data on behavior of negative muon polarization in silicon is given. A possible mechanism of relaxation and frequency shift of muon spin precession in silicon is considered. This revised version was published online in August 2006 with corrections to the Cover Date.     

High sensitivity HCN laser interferometer for plasma electron density measurements

This paper describes a high sensitivity 337 μm HCN laser interferometer for plasma electron density measurements. The plasma phase shift is transferred to a low frequency signal obtained by slightly shifting the frequency of the 337 μm radiation in the reference beam of the interferometer. The frequency shift is produced by diffracting the radiation of a cylindrical rotating blazed grating. A phase shift is deduced from the time variation of the zero crossings of the low frequency signal, giving a result which is independent of amplitude fluctuations. Using pyroelectric detectors, the interferometer has a time resolution of 100 μsec and a sensitivity of 10^-2 fringe.     

NMR Frequency Shift under Sample Spinning

It is shown that, by using an RF coil of suitable shape, sample spinning around an axis parallel to the main field produces a shift of the NMR resonance frequency. This effect is experimentally verified on¹H and¹¹⁹Sn in liquid samples. A general discussion of sample spinning and frequency shift is given in connection with the rotating-frame picture. Several possible applications are described.     

Orientational frequency shifts of microwave 0-0 superfine resonance in 87Rb vapor with selective optical pumping

The orientational frequency shift of the UHF radio-optical resonance in the ⁸⁷Rb vapor with a selective optical pumping by laser and lamp sources is studied experimentally and theoretically. A leading role of the tensor component of the light shift is noticed for both excitation modes, and a modulation technique of the resonance frequency orientation shift suppression is demonstrated. We show that it is necessary to ensure a constancy of the angle between the pump light direction and the external magnetic field vector when using a rubidium quantum discriminator based on moving and rotating carriers.     

Vibration-based damage detection and evaluation of sheet materials using a remote acoustic excitation

A simple method of damage severity assessment on sheet materials is suggested and proved by theory and experiment. The investigated defect types are in forms of added mass and crack. The method is based on the frequency shift measurement of a material vibrating as a membrane subjected to static tension and irradiated by an acoustic wave. It is shown both theoretically and experimentally that the natural frequency of the damaged membrane is shifted relative to its position in the ideal material. A local increase in thickness (or addition of mass) shifts the natural frequency down, while a crack shifts the frequency up. The method can be considered as acoustic weighting through the frequency shift. The sensitivity of this method can be high because frequency measurement is one of the most accurate measurements in physics and metrology. Published in Russian in Akusticheskiĭ Zhurnal, 2008, Vol. 54, No. 1, pp. 147–155. The text was submitted by the authors in English.     

Two-dimensional interferogram of an exploding selenium foil using asoft X-ray laser interferometer

We have developed a soft X-ray interferometer capable of probing large high-density plasmas with micron spatial resolutions. A neon-like yttrium X-ray laser operating at 155 Å was combined with the Mach-Zehnder interferometer to obtain electron density profiles of a laser-produced exploding selenium foil plasma. The plasma was produced with one Nova laser beam using a 120-μm line focus, the same conditions used to create a selenium X-ray laser. The interferogram of the selenium plasma was obtained from an end-on perspective     

Al0.6Ga0.4N/GaN/Al0.3Ga0.7N/Al0.6Ga0.4N量子阱中的Rashba自旋劈裂

正如人们所知, 可以通过电场或者设计非对称的半导体异质结构来调控体系的结构反演不对称性(SIA)和Rashba自旋劈裂. 本文研究了Al_0.6Ga_0.4N/GaN/Al_0.3Ga_0.7N/Al_0.6Ga_0.4N量子阱中第一子带的Rashba 系数和Rashba自旋劈裂随Al_0.3Ga_0.7N插入层(右阱)的厚度w_s以及外加电场的变化关系, 其中GaN层(左阱)的厚度为40-w_s Å. 发现随着w_s的增加, 第一子带的Rashba系数和Rashba自旋劈裂首先增加, 然后在w_s>20 Å 时它们迅速减小, 但是w_s>30 Å时Rashba自旋劈裂减小得更快, 因为此时k_f也迅速减小. 阱层对Rashba系数的贡献最大, 界面的贡献次之且随w_s变化不是太明显, 垒层的贡献相对比较小. 然后, 我们假w_s=20 Å, 发现外加电场可以很大程度上调制该体系的Rashba系数和Rashba自旋劈裂, 当外加电场的方向同极化电场方向相同(相反)时, 它们随着外加电场的增加而增加(减小). 当外加电场从-1.5×10⁸ V·m^-1到1.5×10⁸ V· m^-1变化时, Rashba系数随着外加电场的改变而近似线性变化, Rashba自旋劈裂先增加得很快, 然后近似线性增加, 最后缓慢增加. 研究结果表明可以通过改变GaN层和Al_0.3Ga_0.7N层的相对厚度以及外加电场来调节Al_0.6Ga_0.4N/GaN/Al_0.3Ga_0.7N/Al_0.6Ga_0.4N量子阱中的Rashba 系数和Rashba自旋劈裂, 这对于设计自旋电子学器件有些启示.