A simple analysis of the einstein relation in bismuth under different physical conditions

Summary We have studied the Einstein relation of the diffusivity-mobility ratio of the carriers in Bi in accordance with the McClure and Choi, the hybrid, the Cohen, the Lax and the ellipsoidal parabolic energy band models under magnetic quantization, cross-field configuration, quantum wells, electric-field-aided quantum wells, quantum wells under cross-field configuration, quantumwell wires, electrifield-aided quantum well wires and quantum well wires under cross-field configurations, respectively. The Einstein relation varies with various physical variables in different manners which are totally band structure dependent. We have also suggested an experimental method of determining the diffusivity-to-mobility ratio in degenerate materials having arbitrary dispersion laws.     

Influence of magnetic quantization on the effective electron mass in Kane-type semiconductors

Summary We study the effective electron mass at the Fermi level in Kane-type semiconductors on the basis of fourth order in effective mass theory and taking into account the interactions of the conduction electrons, heavy holes, light holes and split-off holes, respectively. The results obtained are then compared to those derived on the basis of the well-known three-band Kane model. It is found, takingn-Hg_1−x Cd _x Te as an example, that the effective electron mass at the Fermi level in accordance with fourth-order model depends on the Fermi energy, magnetic quantum number and the electron spin respectively due to the influence of band nonparabolicity only. The dependence of effective mass on electron spin is due to spin-orbit splitting parameter of the valence band in three-band Kane model and the Fermi energy due to band nonparabolicity in two-band Kane model. The same mass exhibits an oscillatory magnetic-field dependence for all the band models as expected since the origin of oscillations in the effective mass in nonparabolic compounds is the same as that of the Shubnikov-de Hass oscillations. In addition, the corresponding results for parabolic energy bands have been obtained from the generalized expressions under certain limiting conditions.     

On the effective electron mass in quantum well wires of ternary chalcopyrite semiconductors

Summary An attempt is made to study effective electron mass in quantum well wires of ternary chalcopyrite semiconductors by formulating a new 1D dispersion relation, within the framework of thek·p formalism considering the anisotropies in the band parameters. It is found, taking quantum well wires ofn-CdGeAs₂ as an example, that the effective Fermi level mass depends on the subband index due to the combined influence of crystal-field splitting parameter and the anisotropic spinorbit splitting parameters, respectively. The masses increase with increasing carrier degeneracy and decreasing film thickness, respectively. In addition, the well-known results for the corresponding parabolic energy bands have been derived as special cases of the generalized formulations.     

Theoretical study of the effective electron mass in ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields

An attempt is made to investigate theoretically the effective electron mass in ternary chalcopyrite semiconductors at low temperatures on the basis of a newly derived dispersion relation of the conduction electrons under cross fields for the more generalized case which occurs from the consideration of the various types of anisotropies in the energy spectrum. It is found, taking degeneraten-CdGeAs₂ as an example, that the effective electron mass at the Fermi level along the direction of magnetic quantization depends on both the Fermi energy and the magnetic quantum number due to the combined influence of the crystal field splitting parameter and the anisotropic spin-orbit splitting parameter respectively, resulting in different effective masses at the Fermi level corresponding to different magnetic sub-bands. It is also observed that the same mass at the Fermi level in the direction normal to both magnetic and electric fields also varies both with Fermi energy and magnetic sub-band index, and the characteristic feature of cross-fields is to introduce the index-dependent oscillatory mass anisotropy. The theoretical results are in good agreement with the experimental observations as reported elsewhere.     

Size quatized levels of the valence band and the optical gain in strained <Emphasis Type="Italic">p</Emphasis>-AlGaAs/GaAsP/<Emphasis Type="Italic">n</Emphasis>-AlGaAs structures under uniaxial compression

The band structure, size quatized levels, and wave functions in the conduction and valence bands of strained n-Al _x Ga_{1 − x} As/GaAs _y P_{1 − y} /p-Al _x Ga_{1 − x} As (y = 0.84) heterostructures are calculated numerically upon a uniaxial compression along the [110] direction. The calculation indicates a sublinear increase of the effective optical gap in the GaAs_0.84P_0.16 quantum well, strong mixing of states of light and heavy holes, and merging of the corresponding ground states in the quantum well of the valence band under a pressure of 4.5–5 kbar. The calculation of matrix elements of the electron-photon interaction operator for a system of possible interband transitions permits one to determine the optical gain for the TE and TM modes. The increase in this coefficient by two to fourfold under uniaxial compression agrees with the previously published experimental data on the increase of the electroluminescence intensity.     

Momentum conservation in the luminescence of modulation-doped Ga x In1−x As−Al y In1−y As quantum wells

Summary Thek-conserving selection rule in the electron-hole recombination is investigated by intensity-dependent photoluminescence measurements inn-type modulation-doped Ga _x In_1−x As−Al _y In_1−y As single quantum wells intentionally doped with Be acceptors in the well centre. Thek-non-conserving recombination process involves electrons with momentum up to the Fermi edge and holes localized on the Be acceptors. The transition from a one-component electron plasma to a two-component electron-hole plasma is studied by comparing the experimental results with theoretical line shape models. The density-dependent band gap renormalization is determined for the one-component and the two-component electron-hole plasma. The obtained results are found to agree well with recent theoretical calculations.     

Electron–hole symmetry and spin–orbit splitting in IV–VI asymmetric quantum wells

It is shown that, due to the electron–hole symmetry of the fundamental gap of the lead–salts (PbTe, PbSe and PbS), the Rashba spin splitting in their flat band asymmetric quantum wells is much reduced with the usual equal conduction and valence band-offsets. Different from the III–V case, we find that the important structure inversion asymmetry for the Rashba splitting in IV–VI quantum wells with different left and right barriers is not a material property (i.e., barrier height, effective mass or band gap) but results from the band alignment. This is shown by specific envelope function calculations of the spin-dependent subband structure of Pb_1−xEu_xTe/PbTe/Pb_1−yEu_yTe asymmetric quantum wells (x≠y), based on a simple but accurate four-band kp model for the bulk band structure near the gap, which takes into account band anisotropy, nonparabolicity and multi-valley effects.     

The emission spectrum of <Emphasis Type="Italic">p</Emphasis>-AlGaAs/GaAsP/<Emphasis Type="Italic">n</Emphasis>-AlGaAs diodes under uniaxial compression

New experimental data are presented on the effects of uniaxial compression of up to 4 kbar along the [110] and [1$ \bar 1 $ \bar 1 0] crystallographic directions on the spectra of electroluminescence and the current-voltage characteristics of diodes based on n-Al _x Ga_{1 − x} As/GaAs _y P_{1 − y} /p-Al _x Ga_{1 − x} As (y = 0.84) heterostructures that were designed for injection lasers. With increasing pressure, the spectra show a shift to shorter wavelengths, reaching 25 meV at 3 kbar; the intensity increases 2–3 times as well. Numerical calculations were carried out on the band structure of the investigated heterostructures under compression along the [110] axis, which indicate the increase in the effective band gap in the quantum well (QW) GaAs _y P_{1 − y} , with a pressure coefficient of about 8.5 meV/kbar and reduction of the barrier height at the boundaries of the QW. The calculations predict the possibility that light and heavy holes crossover at pressures above 4.5–5 kbar. The increase in the effective band gap completely describes the experimental data on the shift of the electroluminescence spectra. The mixing of light and heavy holes when approaching the band crosspoint is the probable cause of an increase in the intensity of radiation under uniaxial compression.     

Splitting of transverse optical phonon modes localized in GaAs quantum wires on a faceted (311)A surface

The energy splitting of fundamental localized transverse optical (TO1) phonon modes in GaAs/AlAs superlattices and quantum wires grown by molecular-beam epitaxy on a faceted (311)A GaAs surface is observed by Raman spectroscopy. The form of the Raman scattering tensor makes it possible to observe the TO_x and TO_y modes separately, using different scattering geometries the y and x axes are the directions of displacement of the atoms and are directed parallel and transverse to the facets on the (311)A surface). Enhancement of the splitting of the TO1_x and TO1_y modes is observed as the average thickness of the GaAs layers is decreased from 21 to 8.5 Å. The splitting is probably due to the effect of the corrugation of the GaAs/AlAs (311)A hetero-interface on the properties of localized phonon modes. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 1, 45–48 (10 July 1997)     

Raman scattering and hot luminescence spectra of Zn1 − x Mn x Te quantum wires

The Raman scattering and luminescence spectra of Zn_{1 − x} Mn _x Te (0 ≤ x ≤ 0.6) quantum wires have been investigated. The quantum wires have been grown by molecular-beam epitaxy on the (100)GaAs substrate with Au used as a catalyst. The spectrum of optical phonons in ZnMnTe quantum wires varies with a variation in x in accordance with an intermediate (between one- and two-mode) type of transformation. The optical phonon spectrum has been analyzed in terms of the microscopic theory. It has been demonstrated that the experimental data can be brought in accord with the theory by properly modifying the calculated density of phonon states for ZnTe. The spatial confinement has been found to affect the electronic states in Zn_{1 − x} Mn _x Te quantum wires.     

Quantum and semiclassical oscillations in the organic metal (BEDO-TTF)2Clx(H2O)y

We study quantum (Shubnikov-de Haas and de Haas-van Alphen) oscillations and angular oscillations of the reluctance in the organic quasi-two-dimensional metal (BO)₂Cl_x(H₂O)_y. We show that the Fermi surface in this compound consists of a slightly corrugated cylinder with its axis perpendicular to the conducting plane. The cross section of the cylinder in this plane is a perfect circle of radius k _F≃3×10⁷ cm⁻¹. The effective carrier mass associated with this cylinder is m*=(1.65–2.0) m ₀ in the conducting plane, while the Dingle temperature is T _D=3–4 K. Zh. éksp. Teor. Fiz. 114, 1137–1146 (September 1998)     

Galvanomagnetic and thermoelectric properties of p-Bi2?xSbxTe3?ySey solid solutions at low temperatures (<220 K)

The galvanomagnetic and thermoelectric properties of p-Bi_2−x Sb_xTe_3−y Se_y solid solutions (x≤1.2, y≤0.09) are studied for various carrier concentrations. The degeneracy parameter β_d governing the scattering processes in solid solutions was calculated in terms of the many-valley energy spectrum model. The data on the degeneracy parameter and the Seebeck coefficient α were used to calculate the effective scattering parameter r _eff and the reduced Fermi level η. The parameter r _eff was found to depend on the carrier concentration in the materials studied. The temperature dependences of the effective density-of-states mass m/m ₀ and mobility μ₀ in samples with various carrier concentrations were determined. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 8, 2004, pp. 13662–1371. Original Russian Text Copyright ? 2004 by Luk’yanova, Kutasov, Popov, Konstantinov.     

Simple theoretical analysis of the Fowler-Nordheim field emission from microstructures and quantum wires of optoelectronic materials

We present a simplified theoretical formulation of the Fowler-Nordheim field emission (FNFE) under magnetic quantization and also in quantum wires of optoelectronic materials on the basis of a newly formulated electron dispersion law in the presence of strong electric field within the framework of k.p formalism taking InAs, InSb, GaAs, Hg_1−xCd_xTe and In_1−xGa_x As_yP_1−y lattice matched to InP as examples. The FNFE exhibits oscillations with inverse quantizing magnetic field and electron concentration due to SdH effect and increases with increasing electric field. For quantum wires the FNFE increases with increasing film thickness due to the existence van-Hove singularity and the magnitude of the quantum jumps are not of same height indicating the signature of the band structure of the material concerned. The appearance of the humps of the respective curves is due to the redistribution of the electrons among the quantized energy levels when the quantum numbers corresponding to the highest occupied level changes from one fixed value to the others. Although the field current varies in various manners with all the variables in all the limiting cases as evident from all the curves, the rates of variations are totally band-structure dependent. Under certain limiting conditions, all the results as derived in this paper get transformed in to well known Fowler-Nordheim formula.     

Intense laser field effect on impurity states in a semiconductor quantum well: transition from the single to double quantum well potential

In this work are studied the intense laser effects on the impurity states in GaAs-Ga_{1− x} Al _x As quantum wells under applied electric and magnetic fields. The electric field is taken oriented along the growth direction of the quantum well whereas the magnetic field is considered to be in-plane. The calculations are made within the effective mass and parabolic band approximations. The intense laser effects have been included through the Floquet method by modifying the confinement potential associated to the heterostructure. The results are presented for several configurations of the dimensions of the quantum well, the position of the impurity atom, the applied electric and magnetic fields, and the incident intense laser radiation. The results suggest that for fixed geometry setups in the system, the binding energy is a decreasing function of the electric field intensity while a dual monotonic behavior is detected when it varies with the magnitude of an applied magnetic field, according to the intensity of the laser field radiation.     

Short pulse width UV laser at 355 nm based on pulse LD side-pumped ceramic Nd:YAG and BBO electro-optical Q-switched

355 nm UV laser was obtained with a pulse width of less than 5 ns and a peak power at megawatt level by adopting the 808 nm pulse laser diode (LD) side-pumped ceramic Nd:YAG and BBO crystal electrooptical Q-switched. The single-pulse energy was measured to be 24.3 mJ with 4.86 ns pulse width and 5.11 MW peak power at a repetition rate of 1Hz under a 120 A pump current. Using a volume of beam splitting mirrors, wavelength outputs at 1064, 532, and 355 nm pulse laser was obtained simultaneously with a respective average output power of 656.6, 357.1, and 260.5 mW, the beam quality factor M ₂ are (M _{x − 1064}² = 5.83, M _{y − 1064}² = 5.61), (M _{x − 532}² = 4.25, M _{y − 532}² = 4.08) and (M _{x − 355}² = 6.32, M _{y − 355}² = 6.15), corresponding to a conversion efficiency at 11% from 1064 to 355 nm.     

Comparative analysis of the effect of La and Co on the superconductivity and energyband spectrum of YBa2Cu3Oy for different oxygen contents

Temperature dependences of the resistivity and Seebeck coefficient of Y(Ba_1−x La_x)₂Cu₃O_y and YBa₂Cu_3−x Co_xO_y samples (x=0–0.25) have been measured under maximum sample saturation with oxygen, as well as following their anneal in an oxygen-deficient atmosphere. The T _c (x) dependences for as-prepared samples were found to pass through a maximum at x=0.05, which persists after annealing for Y(Ba_1−xLa_x)₂Cu₃O_y and disappears for YBa₂Cu_3−x Co_xO_y. A phenomenological model of the band spectrum in normal phase has been used to determine the parameters of the conduction band and of the carrier system, and to analyze their variation with the dopant type and content, as well as with annealing. Despite the differences observed in the T _c (x) dependence, the critical temperatures for all the sample series studied were found to correlate with the conduction-band effective width. The mechanism of the effect of impurities on the band-structure parameters and the reasons for the different influence of annealing on the properties of Y(Ba_1−x La_x)₂Cu₃O_y and YBa₂Cu_3−x Co_xO_y are discussed. Fiz. Tverd. Tela (St. Petersburg) 41, 389–394 (March 1997)     

Manifestation of the composition inhomogeneity of Zn1 − x Mg x Te quantum wires in Raman spectra

The resonant Raman spectra of Zn_{1 − x} Mg _x Te quantum wires have been investigated. The dependences of the frequencies of longitudinal optical phonons of the ZnTe-like and MgTe-like modes (LO1 and LO2) on the photon energy have been found. The character of these dependences correlates with the variation in the frequencies of optical phonons of the Zn_{1 − x} Mg _x Te alloys on the composition (x). This gives grounds to assume that the quantum wires are inhomogeneous in the composition. This assumption is also confirmed by the fact that the intensity ratio of the LO2 and LO1 modes in the Raman spectra increases with increasing excitation energy.     

Photoionization cross-section and binding energy of shallow donor impurities in Ga1−xInxNyAs1−y/GaAs quantum wires

We have investigated the effects of the nitrogen and indium concentrations on the photoionization cross-section and binding energy of shallow donor impurities in Ga_1−xIn_xN_yAs_1−y/GaAs quantum wires. The numerical calculations are performed in the effective mass approximation, using a variational method. We observe that incorporation of small amounts of nitrogen and indium leads to significant changes of the photoionization cross-section and binding energy.     

Influence of magnetic quantization on the effective mass in semiconductor superlattices

An attempt is made to study the effect of a quantizing magnetic field on the effective electron mass in a semiconductor superlattice at low temperatures. It is found on the basis of the tight-binding approximation, taking GaAs-Ga_1–x Al _x As an example, that the effective mass at the Fermi level depends on the magnetic quantum number due to the cosine dependence of the wave-vector in the superlattice direction. The mass also exhibits oscillatory features in the presence of magnetic quantization because of its dependence on Fermi energy which oscillates with changing magnetic field.     

Influence of the illumination on the subband structure and?occupation in AlxGa1?xN/GaN heterostructures

The subband structure and occupation in the triangular quantum well at Al _x Ga_1−x N/GaN heterointerfaces have been investigated by means of temperature dependent Shubnikov–de Haas (SdH) measurements at low temperatures and high magnetic fields under illumination. After the illumination of the heterostructures, the total two-dimensional electron gas concentration increases, and the SdH oscillation amplitudes are enhanced when there is no additional subband occupation. It is also found that the energy separation between the subbands decreases after the illumination. We suggest that the illumination decreases the electric field and thus weakens the quantum confinement of the triangular quantum well at Al _x Ga_1−x N/GaN heterointerfaces. The GaN layer is thought to be the primary contributor of the excited electrons by the illumination.