Morphologies of GaN one-dimensional materials

GaN one-dimensional materials with different morphologies were formed on LaAlO₃ crystal, silicon crystal and quartz glass substrates through a simple sublimation method. They were characterized by powder X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM) and energy-dispersive X-ray (EDX) spectroscopy. FE-SEM images showed that the morphologies of the one-dimensional materials included straight nanorods, curved nanowires, nanoribbons, zigzag nanorods and beaded or capture-tree nanorods. XRD and EDX studies indicated that all the one-dimensional materials were wurtzite GaN. Received: 14 July 2000 / Accepted: 17 July 2000 / Published online: 20 September 2000     

Synthesis of aligned gallium nitride nanowire quasi-arrays

Self-aligned GaN nanowire quasi-arrays were synthesized on MgO crystal through a simple gas reaction method. They were characterized by powder X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray (EDX) spectroscopy and high-resolution transmission electron microscopy (HRTEM). FE-SEMimages showed that the product consisted of quasi-arrays of nanowires. XRD, EDX and HRTEM indicated that the nanowires were wurtzite GaN single crystals. Received: 19 June 2000 / Accepted: 21 June 2000 / Published online: 9 August 2000     

The synthesis of highly oriented GaN nanowire arrays

Highly oriented GaN nanowire arrays have been achieved by the catalytic reaction of gallium with ammonium. The resulting materials were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). SEM images show that the resulting materials are nanowire arrays with a uniform length of about 10 μm. XRD, EDS, TEM and SAED indicate that the nanowire arrays are single-crystal hexagonal GaN with a wurtzite structure. They have diameters of 10 to 20 nm. Received: 2 October 2002 / Accepted: 7 October 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. E-mail: wwwangjc@sina.com     

Characteristics of low-temperature-grown GaN films on Si(111)

In this paper, we report on the characteristics of GaN films grown on Si(111) at a low temperature (200 °C) by electron cyclotron resonance (ECR) plasma-assisted metalorganic chemical vapor deposition (PA-MOCVD). Structural analysis of the GaN films was performed by using scanning electron microscopy (SEM), atomic force miscroscopy (AFM), X-ray diffraction (XRD), energy dispersive X-ray analysis (EDX), and Rutherford backscattering spectrometry (RBS). Post deposition analysis revealed high quality crystalline GaN was obtained at this low temperature. Electrical analysis of the GaN films was done by using current-voltage (I-V) measurements where electrical characterizations were carried on GaN/Si heterojunction and Schottky barrier diodes. Rectification behaviour was observed for the isotype GaN/Si (n-n) heterojunction. Ideality factors and Schottky barrier heights for Ni and Cr Schottky barriers on GaN, were deduced to be 1.4 and 1.7; and 0.62 and 0.64 eV, respectively.     

Fabrication of bamboo-shaped GaN nanorods

Bamboo-shaped GaN nanorods were formed through a simple sublimation method. They were characterized by means of X-ray powder diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and selected-area electron diffraction (SAED). The TEM image showed that the nanorods were bamboo-like. XRD, HRTEM and SAED patterns indicated that the nanorods were single-crystal wurtzite GaN. Received: 8 January 2001 / Accepted: 28 April 2001 / Published online: 20 December 2001     

Synthesis of single crystalline GaN nanoribbons on sapphire (0001) substrates

Single crystalline GaN nanoribbons were synthesized through nitriding Ga₂O₃ thin films deposited on sapphire (0001) substrates by radio frequency magnetron sputtering. The component and structure of nanoribbons were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The flat and smooth ribbon-like nanostructures are high quality single crystalline hexagonal wurtzite GaN. The thickness and width-to-thickness ratio of the grown GaN nanoribbons are in the range of 8-15 nm and ∼5-10, respectively.     

High-quality GaN nanowires synthesized using a CVD approach

High-quality GaN nanowires were synthesized on a large-area Si substrate by direct reaction of gallium with ammonia using InCl₃ as a catalyst. The morphology and microstructure of the resulting products were characterized using a field-emission scanning electron microscope (SEM), a high-resolution transmission electron microscope, and X-ray diffraction (XRD). XRD and electron diffraction revealed that the nanowires are of a hexagonal GaN phase with the wurtzite structure. The SEM study showed that the nanowires are straight and have a smooth morphology with lengths up to 500 μm. The present results reveal that InCl₃ is an optimal catalyst in GaN nanowire production. Received: 2 April 2002 / Accepted: 12 April 2002 / Published online: 19 July 2002     

Characterization of high-quality MBE-grown GaN films on intermediate-temperature buffer layers

High-quality GaN thin films are grown by rf-plasma assisted molecular beam epitaxy. The quality of the GaN epitaxial layer is significantly improved by using an intermediate-temperature GaN buffer layer (ITBL) in addition to a conventional 20-nm-thick low-temperature buffer layer. The GaN epitaxial layers demonstrate systematic improvements in the electron mobility increasing from 82 cm² V^-1 s^-1, for films grown with just the low-temperature buffer layer, to about 380 cm² V^-1 s^-1 for films grown with an ITBL of thickness 800 nm. The photoluminescence also indicates systematic improvements in the intensity and the full-width-half-maximum with the use of ITBL. Photoreflectance spectra are measured from the GaN films. Detailed analyses of the excitonic transition energy demonstrate that the residual strain relaxes rapidly with the use of ITBL, which is attributed to the observed improvements in the mobility and the PL spectra. Received: 30 November 2000 / Accepted: 4 December 2000 / Published online: 9 February 2001     

Coherent transport of matter waves

A transport theory for atomic matter waves in low-dimensional waveguides is outlined. The thermal fluctuation spectrum of magnetic near fields leaking out of metallic microstructures is estimated. The corresponding scattering rate for paramagnetic atoms turns out to be quite large in micrometer-sized waveguides (approx. 100 /s). Analytical estimates for the heating and decoherence of a cold atom cloud are given. We finally discuss numerical and analytical results for the scattering from static potential imperfections and the ensuing spatial diffusion process. Received: 17 July 2000 / Published online: 30 November 2000     

Preferential regrowth of indium–tin oxide (ITO) films deposited on GaN (0001) by rf-magnetron sputter

Effects of thermal treatments on the electrical properties and microstructures of indium–tin oxide (ITO)/GaN contacts have been investigated using a rf-magnetron sputter deposition followed by rapid thermal annealing. ITO films annealed at 800 °C revealed Schottky contact characteristics with a barrier height corresponding to ITO’s work function of 4.62 eV. The evolution of electrical properties of ITO/GaN contacts was attributed to the preferential regrowth of In₂O₃ (222)//GaN (0001) with an ideal metal–semiconductor Schottky contact. The feasible use of ITO/GaN as a transparent Schottky contact would be realized by the enhanced regrowth of In₂O₃ at high temperature. Received: 1 September 2000 / Accepted: 15 November 2000 / Published online: 28 February 2001     

The effect of the aminating temperature on the synthesis of gallium nitride nanowires doped with magnesium

GaN nanowires doped with Mg have been synthesized at different temperature through ammoniating the magnetron-sputtered Ga₂O₃/Au layered films deposited on Si substrates. X-ray diffraction (XRD), Scanning electron microscope (SEM), high-resolution TEM (HRTEM) equipped with an energy-dispersive X-ray (EDX) spectrometer and photoluminescence (PL) were used to analyze the structure, morphology, composition and optical properties of the as-synthesized sample. The results show that the ammoniating temperature has a great impact on the properties of GaN. The optimally ammoniating temperature of Ga₂O₃/Au layer is 900 C for the growth of GaN nanowires(NWs). The band gap emission (358 nm) relative to that (370 nm) of undoped GaN NWs has an apparent blueshift, which can be ascribed to the doping of Mg. Finally, the growth mechanism is also briefly discussed.     

Two-step synthesis of one-dimensional single crystalline GaN nanowires

Straight and smooth GaN nanowires were synthesized on quartz substrates through the direct reaction of Ga₂O₃ thin films with flowing ammonia in a horizontal oven without using a template or catalyst. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), transmission electron microscopy (TEM) and photoluminescence (PL) were used to characterize the samples. The straight and smooth cylindrical nanostructures are high quality single crystalline hexagonal wurtzite GaN nanowires with diameters ranging from 5 to 30 nm and lengths up to 20 μm. The near-band-edge emission peak located at 367 nm was observed at room temperature.     

Synthesis and characterization of GaN nanowires

In this work, GaN nanowires were fabricated on Si substrates coated with NiCl₂ thin films using chemical vapor deposition (CVD) method by evaporating Ga₂O₃ powder at 1100 °C in ammonia gas flow. X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscope (HRTEM) and photoluminescence (PL) spectrum are used to characterize the samples. The results demonstrate that the nanowires are single-crystal GaN with hexagonal wurtzite structure. The growth mechanism of GaN nanowires is also discussed.     

A theoretical study on various models for the domain boundaries in epitaxial GaN films

Various domain boundaries that are found in epitaxial Wurtzite GaN films were studied by molecular dynamics simulation. The Ewald summation algorithm and Keating potential model are adopted to calculate the long-range Coulomb interaction and the short-range bonding force in the semiconductor system, respectively. The research results show that the domain formation energies of (100) and (110) boundaries are significantly different. The latter ones have general quite higher formation energies than the formers. The like-atom (i.e. atoms of the same kind) bonding domain boundaries (LABDB) have higher formation energies than their counterparts of unlike-atom (i.e. atoms of different kinds) bonding domain boundaries (UABDB) in all GaN (100) and (110) interfaces. The UABDB structures are all stable while most of the LABDB are unstable. The advantage and the limitation of Keating potential model in Molecular Dynamics simulation for covalent crystal are discussed. Received: 7 April 1999 / Accepted: 1 November 1999 / Published online: 8 March 2000     

Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique

Radio frequency magnetron sputtering/post-carbonized-reaction technique was adopted to prepare good-quality GaN films on Al₂O₃(0 0 0 1) substrates. The sputtered Ga₂O₃ film doped with carbon was used as the precursor for GaN growth. X-ray diffraction (XRD) pattern reveals that the film consists of hexagonal wurtzite GaN. X-ray photoelectron spectroscopy (XPS) shows that no oxygen can be detected. Electrical and room-temperature photoluminescence measurements show that good-quality polycrystalline GaN films were successfully grown on Al₂O₃(0 0 0 1) substrates.     

GaN blue diode lasers: a spectroscopist’s view

We have characterized the spectroscopic properties of one of the first samples of blue-emitting diode lasers based on GaN. With such a laser diode operated inside a standard extended cavity arrangement we find a mode-hop free tuning range of more than 20 GHz and a linewidth of 10 MHz. Doppler-free spectroscopy on an indium atomic beam reveals the isotope shift between the two major indium isotopes as well as efficient optical pumping. Received: 8 November 1999 / Revised version: 31 January 2000 / Published online: 8 March 2000     

Hydride vapor phase epitaxy growth of GaN on sapphire with ZnO buffer layers

The initial stages and subsequent growth of GaN on sapphire using ZnO buffer layers is reported for the hydride vapor phase epitaxy technique. A high gas-phase supersaturation in the growth ambient was used to favor a rapid initial growth on the substrate. A subsequent growth step was employed under conditions that favor a high lateral growth rate in order to promote the coalescence of the initial islands and provide optimal material properties. The specific gas-phase mole fractions of the GaCl and NH₃ at the growth front control both the vertical and lateral growth rates. The use of a two-step growth process in the GaN growth leads to a controlled morphology and improved material properties for GaN materials when grown with a ZnO buffer layer. An optimized set of growth conditions, utilizing this two-step process, was found to also improve the growth directly on sapphire without a ZnO buffer layer. Received: 8 November 2001 / Accepted: 14 November 2001 / Published online: 11 February 2002     

纳米硫化锌的制备及光谱分析

采用超重力反应结晶法制备了纳米硫化锌粒子,并通过透射电子显微镜(TEM)、X射线粉末衍射仪(XRD)、X射线光电子能谱仪(XPS)、傅里叶红外光谱仪(FTIR)、紫外-可见光分光光度计(UV-Vis)和X射线能谱仪(EDX)对纳米硫化锌的形貌、结构、组成和光谱性能进行了细致分析。结果表明：超重力反应结晶法制备的纳米硫化锌粒子为球形,平均粒径为42 nm;XRD图谱表明纳米硫化锌呈现较好的闪锌矿晶型; XPS能谱表明纳米硫化锌的S(2p)的电子结合能为162.6 eV,Zn的2p_3/2,2p_1/2的电子结合能分别为1021.4, 1044.6eV。红外光谱研究表明纳米硫化锌在400～4 000cm-1范围内具有良好的红外透过率。紫外-可见光谱研究发现纳米硫化锌在200～340nm的紫外区域有较强的吸收,其禁带宽度为3.57eV。EDX能谱表明该法制备的纳米硫化锌具有较高的纯度。     

Optical characterisation of CuInSe2 thin films prepared by two-stage process

Optical absorption spectra of CuInSe₂ chalcopyrite semiconductor films prepared using a two-stage technique were investigated. In addition to absorption measurements, energy-dispersive analysis of X-rays (EDAX) and X-ray diffraction measurements (XRD) were also performed. Direct bandgap energy values for the CuInSe₂ films were derived from the variation of (αhν)² with energy. All the measurements were performed on samples with various Cu/In ratios. It was determined from the absorption measurements that the materials have strong absorption at the fundamental band edge. The E_g values showed an increasing trend with decreasing Cu/In ratios. Received: 26 May 2000 / Accepted: 31 October 2000 / Published online: 10 January 2001     

The preparation of tridymite crystal by chemical processing

A new method for the synthesis of tridymite is reported in this article. When amorphous SiO₂ is treated with ethylene glycol for 3 h at 196°C and then filtered and washed with distilled water, tridymite is obtained. The transmission electron microscopy equipped with energy-dispersive X-ray spectroscopy (EDX), powder X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FT-IR) are used to characterize the crystal materials. The EDX shows the material is pure silica and The XRD pattern shows this silica is tridymite phase. In order to study the formation process of tridymite, all sorts of reaction conditions are discussed in detail. The products obtained at different conditions are characterized by XRD techniques. Finally, a reasonable mechanism is proposed.