Polarization field effects on the recombination dynamics in low-In-content InGaN multi-quantum wells

The interplay of polarization fields and free carrier screening in In_xGa_1−xN/GaN (0.03<x<0.07) multiple quantum wells is studied by combining photoluminescence (time-integrated and time-resolved) and cathodoluminescence studies, in an excitation density range from 10⁸ to 10¹² cm⁻² of generated e–h pairs. For such low In content, the quantum-confined Stark effect is verified to rule the recombination dynamics, while effects of carrier localization in potential fluctuations have a minor role. Efficient field screening is demonstrated in CL steady-state high-injection conditions and in PL time-resolved experiments at the maximum excitation density. Under recovered nearly flat band conditions, quantum confinement effects are revealed and a high and possibly composition-dependent bowing parameter is extrapolated. Information on radiative and non-radiative rates for carrier recombination in the wells is obtained, both from steady-state and from time-resolved experiments, modelling the carrier dynamics in the framework of a theoretical rate equation model, which calculates electronic states and recombination rates in the nanostructure by coupling complete self-consistent solutions of Schrödinger and Poisson equations.     

The effect of the excitation and of the temperature on the photoluminescence circular polarization of AlInAs/AlGaAs quantum dots

In this paper, we present a study of photoluminescence (PL) from AlInAs/AlGaAs quantum dots (QDs) structures grown by molecular beam epitaxy. Specifically, we describe the effects of the temperature and of the excitation density on the photoluminescence circular polarization. We have found that the circular polarization degree depends on temperature. On the other hand, the study of the excitation density dependent circular polarization PL degree shows that the last increases in the case of the sample of weak dot density. However, in the case of large dot density, it is almost constant in the excitation density range from 0.116 W cm⁻² to 9 W cm⁻².     

Optical studies of ZnO nanocrystals doped with Eu3+ ions

Synthetic ZnO nanocrystals have been intentionally doped with Eu³⁺ ions. Structural analysis performed on the nanocrystals showed wurtzite-ZnO as the only phase present in the samples. Photoluminescence in emission and excitation modes allows the assignment of the intra-4f⁶ transitions for the Eu³⁺ ions. From the analysis of the optical data we are able to demonstrate that multiple Eu-related optical centres are present in the studied samples. Oxygen vacancies are likely candidates to be responsible for the ion accommodation in the ZnO lattice and from the photoluminescence excitation data we tentatively assign a trap level at ∼200 meV below the conduction band to this intrinsic defect. PACS 78.66.Hf; 78.67.-n; 82.80.Yc     

Observation of the Fermi-edge singularity in n-doped single asymmetric quantum wells: the influence of residual acceptors

The investigation of the evolution of the photoluminescence spectra, in single asymmetric quantum wells (SAQWs), from a typical emission spectrum to a Fermi-edge singularity, is carried out as a function of both the optical excitation intensity and the temperature. The three samples used here are n-doped, low carrier density (below 5×10¹¹ cm⁻²), GaAs/Al_0.35Ga_0.65As SAQWs grown by molecular beam epitaxy. The strong collective recombination of electrons with different k states up to the Fermi wave vector as well as the optical signature of the Fermi-edge singularity is observed in two samples containing residual acceptors inside the GaAs SAQW. In contrast, a third sample containing no experimental evidence of residual acceptors in the GaAs SAQW shows no optical signature of the Fermi-edge singularity.     

Mutual quenching of Er photoluminescence under two laser excitation in GaN:Er

Erbium photoluminescence in GaN:Er was studied with above-band-gap excitation, provided by a He–Cd laser and below-band-gap excitation by a tunable Ti–Sa laser. The spectra obtained with these two lasers exhibit different spectral shapes. When both lasers are used at the same time, we observe that the Er³⁺ photoluminescence induced by each of the lasers is partly quenched by the illumination of the other laser. In this experiment, one of the lasers is modulated and a lock-in amplifier is used to filter the corresponding photoluminescence signal. The spectra recorded this way are found to be linear combinations of spectra obtained with each of the lasers used separately. This effect is explained by the presence of defects mediating the excitation towards the Er³⁺ ions. These defects act as electron traps, which can be populated by one specific laser excitation and are photo-ionized by the other laser leading to a large quenching of Er³⁺ emission.     

Photoluminescence and gain spectroscopy of highly excited epitaxial GaN-layers

The spectra of photoluminescence and optical gain of GaN have been measured at low temperatures under N₂-laser excitation.At low excitation levels (I _exc10⁴W cm^–2) we observe free and bound exciton recombination. At intermediate excitation (I _exc10⁵W cm^–2), inelastic exciton-exciton scattering processes show up. At the highest excitation levels (I _exc10⁶ W cm^–2) we report here for the first time the emission from an electron-hole plasma.     

Exciton-electron interaction in quantum wells with a two dimensional electron gas of low density

II–VI quantum-well structures containing a 2DEG of low density have been investigated by means of polarized photoluminescence, photoluminescence excitation and reflectivity in external magnetic fields up to 20 T. The spin splittings of the exciton X and the negatively charged exciton X ⁻ are measured as a function of the magnetic field strength. The behavior of the magnetic-field-induced polarization degree of the luminescence line related to X ⁻ demonstrates the formation process of negatively charged excitons from excitons and free carriers polarized by the external magnetic field. We have determined the binding energies of the trion formed either with the heavy-hole or the light-hole exciton. The optically detected magnetic resonance (ODMR) technique was applied for the first time to study the optical transition processes in a nanosecond timescale. The electron ODMR was observed with the detection on either the direct exciton or the negatively charged exciton X. Further evidence for the interaction of excitons with the electrons of the two-dimensional gas are demonstrated by a combined exciton-cyclotron resonance line observed in reflectivity and luminescence excitation, shake-up processes observed in photoluminescence, as well as inelastic and spin-dependent scattering processes. Fiz. Tverd. Tela (St. Petersburg) 41, 831–836 (May 1999) Published in English in the original Russian journal. Reproduced here with stylistic changes by the Translation Editor.     

Porous silicon with β-cyclodextrin modified surface for photoluminescence sensing of organic molecules in gas and liquid phase

Porous silicon surface was modified by photochemically activated hydrosilylation reaction with permethyl-6^I-alkenoylamino-6^I-deoxy-β-cyclodextrins terminated with linear alkenoyl spacers of various lengths. As compared to unmodified surface, derivatized surfaces revealed modified photoluminescence response in the presence of controlled amounts of various organic molecules in gas and liquid phase. For the selected set of analytes we observed most significant modification of photoluminescence response for aromatic compounds what corresponds to optimum molecular size for strong host–guest interaction with β-cyclodextrin cavity. Aliphatic compounds quenched photoluminescence from both unmodified and surface modified porous silicon. For low gas phase concentrations of aromatic analytes β-cyclodextrin modified porous silicon revealed photoluminescence enhancement, at higher concentrations common photoluminescence quenching was observed. The size-dependent host–guest interaction between β-cyclodextrin cavity and detected molecule was observed in photoluminescence quenching in the presence of aliphatic molecules in liquid phase. The role of the strength of host–guest interactions between detected analytes and β-cyclodextrin cavity on photoluminescence sensor response is discussed.     

Eu-doped glass materials for red luminescence

Red luminescence (at wavelength about 622 nm) from Eu³⁺ ions embedded in PbO–Bi₂O₃–Ga₂O₃–BaO glass hosts is reported for room and liquid helium temperatures. The substantial influence of energy transfer processes between the host and Eu³⁺ ions is shown experimentally through the dependences of photoluminescence on light polarization and excitation wavelength. Only polarized, excited pulsed XeII laser light (λ=714 nm) gives substantial luminescence with efficiency up to 14.3%. The role of phonon-relaxation subsystem in the observed luminescence is discussed.     

Anomalous plasma phenomena of hollow cathode arc discharge

Magnetically confined argon plasma produced by hollow cathode arc discharge has been studied in different experimental conditions, with discharge current from 10–50 A, vessel argon pressure between 10^–3 and 10^–4 torr (1 torr=133·32 Pa) and axial magnetic field up to 0·12 T. The plasma density measured by a cylindrical Langmuir probe is found to be 10¹⁹ to 4 × 10¹⁹ m^–3 and the electron temperatureT _e varies between 2·5 and 4·8 eV. When an external axial magnetic field is applied the plasma temperature decreases with the increase in the magnetic field intensity until it reaches a minimum value at 0·075T and then increases with the same rate. This has been interpreted as high frequency waves excitation due to electron beam-plasma interaction, which explains the electron density jumps with the magnetic field intensity. Enhanced plasma transport across the magnetic field is studied and classified as anomalous diffusion.     

Photoluminescence origin of lightly doped silicon nanowires treated with acid vapor etching

In this work, we carry out a comprehensive photoluminescence (PL) study to elucidate the origin of light emission from porous silicon nanowires (pSiNWs). SiNWs were first grooved in lightly doped Si wafer by silver assisted chemical etching, and then treated with an acid vapor emanating from HF/HNO₃ aqueous solution heated at 60 °C. Scanning and transmission electron microscopies were used to investigate the effect of the acid vapor etching on morphological properties of SiNWs. The as prepared pSiNWs exhibited a strong room temperature PL emission centered at 1.93 eV. An increase of the PL intensity was observed with the increase of HNO₃ in the acid solution. By varying the laser excitation density from 60 to 300 W/cm², we shed the light on the radiative recombination modes occurring within the Si nanocrystals (SiNCs) generated along the pSiNWs. We study as well the temperature-dependent PL of the pSiNWs in the range 10 to 300 K. Based on both laser excitation density and temperature-dependent PL, we propose a multilevel transition scheme resuming the PL origin taking into account the size distribution, shape and surface states of the SiNCs trimming the wire sidewalls.     

PbO–Bi2O3–Ga2O3–BaO glasses doped by Er as novel materials for IR emission

Infra-red luminescence (at wavelengths about 1600 and 2500 nm) from Er³⁺ ions embedded in PbO–Bi₂O₃–Ga₂O₃–BaO glass hosts is reported for room and helium liquid temperatures. The substantial influence of energy transfer processes between the host and Er³⁺ ions is shown experimentally through the dependences of photoluminescence on light polarization and excitation wavelength. Only the application of the polarized pumping YAG–Nd laser beam (λ=1060 nm) stimulates substantial luminescence with quantum efficiency up to 24%. The role of phonon-relaxation subsystem in the observed luminescence is discussed.     

Synthesis and luminescent properties of nanoparticles LaSrAl3O7:Eu, Tb

Phosphors of nanoparticles LaSrAl₃O₇:RE³⁺(REEu, Tb) have been prepared by a sol–gel method. The structure and luminescent properties of LaSrAl₃O₇:Eu³⁺ and LaSrAl₃O₇:Tb³⁺ phosphors were characterized by X-ray diffraction and atomic force microscopy (AFM), photoluminescence excitation and emission spectra were utilized. From X-ray diffraction (XRD) patterns, it is indicated that the phosphor LaSrAl₃O₇ forms without impurity phase at 900 °C. From atomic force microscopy (AFM) images, it is shown that the crystal size of the phosphores are about 60–80 nm. Upon excitation with UV irradiation, it is shown that there is a strong emission at around 617 nm corresponding to the forced electric dipole ⁵D₀–⁷F₂ transition of Eu³⁺, and at around 545 nm corresponding to the ⁵D₄–⁷F₅ transition of Tb³⁺. The dependence of photoluminescence intensity on Eu³⁺(or Tb³⁺) concentration and annealing temperature were also studied in detail.     

Luminescence of thulium-activated cubic boron nitride

Under high pressure and temperature conditions, we have obtained samples of thulium-activated cubic boron nitride in the form of micropowders, ceramics, and polycrystals activated by thulium in the presence of aluminum. We studied the cathodoluminescence (CL), photoluminescence (PL), and photoluminescence excitation spectra of the samples. In the luminescence spectra we observe structured bands with maxima at ∼370, ∼475, ∼660, and ∼ 800 nm, assigned to electronic transitions in the triply charged thulium ions. We have established that the most efficient method for excitation of “blue” luminescence at ∼475 nm for thulium ions in cBN is excitation by an electron beam. The cBN samples synthesized in the presence of Al have photoluminescence spectra with a more complex structure compared with samples not containing Al, with the band of dominant intensity at about 660 nm. Hypothetically, this is a consequence of incorporation of thulium ions into the crystalline phases cBN and AlN, which are equally likely to be formed during synthesis. The observed photoluminescence spectrum of the indicated samples is the superposition of the photoluminescence spectra of the Tm³⁺ ions located in the crystal fields of cBN and AlN of different symmetries. The presence in the photoluminescence excitation spectra (at 450, 490, and 660 nm) of structure, with features at wavelengths shorter than the excited photoluminescence, suggests a nonresonant mechanism for its excitation. We have established that luminescence of Tm³⁺ ions is less intense than for other rare earth elements incorporated into cubic boron nitride. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 4, pp. 547–555, July–August, 2008.     

Competition of N-passivation and Te-passivation in hydrogenation of Te-doped (Ga,In)(N,As)

(Ga,In)(N,As) lattice matched to GaAs with a band gap of 1 eV is employed as active material in high-efficiency III–V solar cells. Te-doped Ga_0.934In_0.066N_0.023As_0.977 layers were grown by metal-organic vapor-phase epitaxy on (1 0 0) GaAs. The samples were highly doped n-type with carrier concentrations ranging from about 10¹⁷–10¹⁹ cm⁻³. Pieces of the samples were hydrogenated with H-doses of 10¹⁸ ion/cm². The optical and electrical properties of the samples before and after hydrogenation were studied by low-temperature photoluminescence and magnetotransport. In undoped samples hydrogen is known to form N–H complexes which strongly reduce the local perturbation of the lattice due to nitrogen and thus reverse the N-induced global changes of the band structure. Combined analysis of photoluminescence and transport measurements on Te-doped samples, however, indicates a competition between N–H formation and passivation of the Te donor favoring the latter. Hardly any band structure changes due to hydrogenation are observed in these Te-doped samples, instead a strong reduction of the free-carrier concentration is observed after hydrogenation.     

Time- and frequency-domain measurements of carrier lifetimes in GaN epilayers

Results on time-resolved study of GaN photoluminescence (PL) in a power density range from 0.5 mW/cm² under CW excitation by ultraviolet light emitting diode (UV LED) to 1 GW/cm² under pulsed excitation by YAG:Nd laser in the temperature range from 8 to 300 K are presented. Measurements of PL response in the frequency domain by using amplitude-modulated emission of a UV LED as well as time-resolved PL measurements using a streak camera and light-induced transient grating technique have been used in the study. Yellow luminescence (YL) intensity increases with increasing temperature up to 120 K and faster components in YL decay switch to slower components with increasing temperature under UV LED excitation. At low carrier densities, the trapping decreases the carrier lifetime below 250 ps, while the carrier lifetime in the same GaN sample under excitation ensuring saturation of the traps equals 2 ns.     

Linearly polarized photoluminescence from an ensemble of wurtzite GaN/AlN quantum dots

Microphotoluminescence from GaN/AlN quantum dots grown by molecular beam epitaxy on sapphire substrates along the (0001) axis has been studied. To produce quantum dots of different average sizes and densities, the nominal amount of deposited GaN has been varied from 1 to 4 ML. The density of the quantum dots was about 10¹¹ cm⁻², which corresponded to about 10³ quantum dots excited in the experiments. The photo-luminescence from the quantum dots was linearly polarized and the maximum polarization degree (15%) has been observed for the sample with the lowest amount of deposited GaN. The photoluminescence intensity from this sample under continuous laser excitation decreased by more than two orders of magnitude for about 30 min and then stabilized. The photoluminescence intensity from other samples under continuous excitation remained constant. We suggest that a rather high polarization degree is caused by anisotropy in the strain and shape of the quantum dots formed near the dislocations, which also act as the centers of nonradiative recombination.     

Intra-dot relaxation and dephasing rates from time-resolved photoluminescence from InAs quantum dot ensembles

An ensemble of InAs quantum dots with ground state transition energies centered at 1.216 eV and density 10¹¹dots/cm² has been studied by time-resolved photoluminescence (PL). The wavelength of the 100-fs excitation pulse was tuned through the ground (excited) state transitions, resulting in resonant (optical phonon sideband) PL. The decay of the PL was time resolved with a streak camera in the interval 1.5–3 ns to avoid scattered laser light. The intensity of the PL was recorded with its polarization both parallel with and perpendicular to the excitation polarization (along one of the crystal’s cleave axes); the ratio is 2.22 at low temperatures and low excitation. A phenomenological rate equation analysis is made, separating the excitations into two classes, one polarized along the excitation polarization and the other unpolarized (either that way immediately after the excitation pulse or scattered from the first class). Excellent fits to the data lead to the conclusion that both classes decay radiatively with a lifetime of 1 ns, and a transfer from the polarized to the unpolarized species takes place with a distribution time of 12 ns at low temperatures and low excitation, dropping rapidly toward zero for temperatures above 30 K and for intense excitation levels. The polarization of a coherently excited ground state exciton should dephase with a rate equal to the sum of the radiative rate plus the inverse of this distribution time.     

Photoluminescence studies of confined states in AlGaAs/GaAs asymmetric quantum well

In the recombination spectra of AlGaAs/GaAs heterostructures, a peculiar and asymmetric photoluminescence (PL) band F has previously been reported [Aloulou et al., Mater. Sci. Eng. B 96 (2002) 14] to be due to recombinations of confined electrons from the two-dimensional electron gas (2DEG) formed at AlGaAs/GaAs interface in asymmetric quantum well (AQW). Detailed experiments are reported here on GaAs/Al_0.31Ga_0.69As/GaAs:δSi/Al_0.31Ga_0.69As/GaAs samples with different spacer layer thicknesses. We show that the band F is the superposition of two PL bands F′ and F″ associated, respectively, to AQW and a symmetric quantum well (SQW). In the low excitation regime, the F′ band present a blue shift (4.4 meV) followed by important red shift (16.5 meV) when increasing optical excitation intensity. The blue shift in energy is interpreted in terms of optical control of the 2DEG density in the AQW while the red shift is due to the narrowing of the band gaps caused by the local heating of the sample and band bending modification for relatively high-optical excitation intensity. Calculation performed using self-consistent resolution of the coupled Schrödinger–Poisson equations are included to support the interpretation of the experimental data.     

Photoluminescence characterization of air exposed AlGaAs surface and passivated ex situ by ultrathin silicon interface control layer

Using the photoluminescence surface state spectroscopy (PLS³) technique, attempts were made to determine the surface state density (N_ss) distribution on Al_xGa_1−xAs (x≈0.3) surfaces passivated by the Si interface control layer (ICL) technique. Air-exposed AlGaAs epitaxial wafers which are technologically important for fabrication of various devices were passivated ex situ by forming a SiO₂/Si₃N₄/Si ICL/AlGaAs structure after the HCl treatment and their photoluminescence behavior was investigated in detail. The result of the PLS³ analysis indicated that Si ICL-based passivation reduces the minimum interface state density value down to 10¹⁰ cm⁻² eV⁻¹ range. Some indication was also obtained that further improvements are possible by using electron cyclotron resonance (ECR)-enhanced N₂ plasma for Si₃N₄/Si ICL interface formation.