Effect of electron beam irradiation on the structural,thermal and optical properties of poly(vinyl alcohol) thin film

Poly(vinyl alcohol) (PVA) polymer was prepared using the casting technique. The obtained PVA thin films have been irradiated with electron beam doses ranging from 20 to 300 kGy. The resultant effect of electron beam irradiation on the structural properties of PVA has been investigated using X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR), while the thermal properties have been investigated using thermo-gravimetric analysis and differential thermal analysis (DTA). The onset temperature of decomposition T ₀ and activation energy of thermal decomposition E _a were calculated, results indicate that the PVA thin film decomposes in one main weight loss stage. Also, the electron beam irradiation in dose range 95–210 kGy led to a more compact structure of the PVA polymer, which resulted in an improvement in its thermal stability with an increase in the activation energy of thermal decomposition. The variation of transition temperatures with electron beam dose has been determined using DTA. The PVA thermograms were characterized by the appearance of an endothermic peak due to melting. In addition, the transmission of the PVA samples and any color changes were studied. The color intensity Δ E was greatly increased with increasing electron beam dose, and was accompanied by a significant increase in the blue color component.     

Surface modification study of low energy electron beam irradiated polycarbonate film

The effect of low energy electron beam irradiation on polycarbonate (PC) film has been studied here. The PC film of thickness 20 μm was exposed by 10 keV electron beam with 100 nA/cm² current density. The irradiated film was characterized by mean of X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and residual gas analyzer (RGA). Formation of unsaturated bonds and partial graphitization of the surface layer are measured by XPS. Results of the AFM imaging shows electron implantation induce changes in surface morphology of the polymer film. The residual gas analyzer (RGA) spectrum of PC is recorded in situ during irradiation. The results show the change in cross-linking density of the polymer at the top surface.     

高功率脉冲电子束辐照SiO$lt;sub$gt;2$lt;/sub$gt;的光学和激光损伤性能

研究了不同剂量的60 kW高功率脉冲电子束辐照对高纯熔石英玻璃的微观结构、光学性能和激光损伤特性的影响规律. 光学显微图像表明, 辐照后熔石英样品由于热效应导致表面破裂, 裂纹密度和尺寸随辐照剂量增加而增大, 采用原子力显微镜分析表面裂纹的微观形貌, 裂纹宽度约1 um, 同时样品表面分布着大量尺寸约0.1–1μm的碎片颗粒. 吸收光谱测试表明, 所有样品均在394 nm处出现微弱的吸收峰, 吸收强度随着电子束辐照剂量增大呈现先增加后减小的趋势. 荧光光谱测试发现辐照前后样品均有3个荧光带, 分别位于460, 494和520 nm, 荧光强度随辐照剂量的变化趋势与吸收光谱一致. 利用355 nm激光研究了不同剂量电子束辐照对熔石英激光损伤阈值的影响, 结果表明熔石英的损伤阈值随着辐照剂量的增加而降低. 在剂量较低时, 导致熔石英激光损伤阈值下降的原因主要是色心缺陷; 剂量较高时, 导致损伤阈值降低的原因主要是样品表面产生的大量微裂纹和碎片颗粒对激光的调制和吸收. 关键词： 熔石英 电子束辐照 色心 激光损伤阈值     

电子束辐照对聚碳硅烷结构与热解性能的影响

在惰性气氛下,用电子束对聚碳硅烷 (PCS) 进行辐照改性。利用傅里叶变换红外光谱分析、凝胶含量测定以及热重-气相色谱-质谱连用技术对不同剂量改性的PCS进行了分析表征,研究了辐照剂量对PCS结构与热解性能的影响。结果表明,电子束辐照作用使PCS样品中大量SiH键和CH键发生断裂,形成了以SiCSi为骨架的三维网状凝胶产物,当辐照剂量高于3 MGy时,PCS的凝胶化程度随辐照剂量的增加而明显变大。热重分析表明,电子束辐照有利于提高PCS的热稳定性,其初始失重温度和陶瓷化产率都会随辐照剂量的增加而升高,其中,经20 MGy辐照后的PCS样品的陶瓷化产率可达87%。此外,对于400 ℃预处理的PCS样品,在相同吸收剂量下,样品的凝胶质量分数、初始失重温度和最终陶瓷化产率都较未处理的高。     

Ionic conductivity study on electron beam irradiated polyacrylonitrile-polyethylene oxide gel

Different mass percent polyacrylonitrile (PAN)-polyethylene oxide (PEO) gels were prepared and irradiated by an electron beam (EB) with energy of 1.0 MeV to the dose ranging from 13 kGy to 260 kGy.The gels were analysed by using Fourier transform infrared spectrum,gel fraction and ionic conductivity (IC) measurement.The results show that the gel is crosslinked by EB irradiation,the crosslinking degree rises with the increasing EB irradiation dose (ID) and the mass percents of both PAN and PEO contribute a lot to the crosslinking;in addition,EB irradiation can promote the IC of PAN-PEO gels.There exists an optimum irradiation dose,at which the IC can increase dramatically.The IC changes of the PAN-PEO gels along with ID are divided into three regions:IC rapidly increasing region,IC decreasing region and IC balanced region.The cause of the change can be ascribed to two aspects,gel capturing electron degree and crosslinking degree.By comparing the IC-ID curves of different mass percents of PAN and PEO in gel,we found that PAN plays a more important role for gel IC promotion than PEO,since addition of PAN in gel causes the IC-ID curve sharper,while addition of PEO in gel causes the curve milder.     

Ionic conductivity study on electron beam irradiated polyacrylonitrileben polyethylene oxide gel

Different mass percent polyacrylonitrile (PAN)—polyethylene oxide (PEO) gels were prepared and irradiated by an electron beam (EB) with energy of 1.0 MeV to the dose ranging from 13 kGy to 260 kGy. The gels were analysed by using Fourier transform infrared spectrum, gel fraction and ionic conductivity (IC) measurement. The results show that the gel is crosslinked by EB irradiation, the crosslinking degree rises with the increasing EB irradiation dose (ID) and the mass percents of both PAN and PEO contribute a lot to the crosslinking; in addition, EB irradiation can promote the IC of PAN—PEO gels. There exists an optimum irradiation dose, at which the IC can increase dramatically. The IC changes of the PAN—PEO gels along with ID are divided into three regions: IC rapidly increasing region, IC decreasing region and IC balanced region. The cause of the change can be ascribed to two aspects, gel capturing electron degree and crosslinking degree. By comparing the IC—ID curves of different mass percents of PAN and PEO in gel, we found that PAN plays a more important role for gel IC promotion than PEO, since addition of PAN in gel causes the IC—ID curve sharper, while addition of PEO in gel causes the curve milder.     

Direct low-energy electron beam nanolithography

We describe here an alternative approach to direct low-energy electron beam nanolithography process with no conventional deposition of any resist or self-assembled monolayer. The method is based on direct formation of ultrathin dielectric layer on electron irradiated surface, without generation of structural defects. High-quality electron-induced patterns with lateral resolutions of about 10 nm are demonstrated on SiO₂ surface.     

Effects of electron beam irradiation on the friction and work function of the wrinkled graphene

The ability to control the tribological and electrical properties of graphene is critical to the fabrication of micro- and nanoelectromechanical systems (MEMS/NEMS) devices. Due to its high energy, electron beam irradiation has been widely used to adjust the local electrical properties of the graphene, such as inducing local defects or n-type doping. However, whether electron beam irradiation can affect the local tribological properties of wrinkled graphene has not been investigated yet. In this research, we demonstrated that the lateral force signal and the work function of the wrinkled monolayer graphene were affected by the electron beam irradiation.By using Kelvin-probe force microscopy (KPFM) and Raman spectroscopy, we measured the local electrical properties of the wrinkled monolayer graphene and confirmed that the electron-beam exposed area was changed as n-doped graphene. We compared the lateral force signal with surface potential data and concluded that the n-type doping induced by electron beam affected the tribological characteristics. Characterization of the electron-beam exposed wrinkled graphene provides a physical insight that the electrical and tribological characteristics of wrinkled graphene are correlated.     

A variable electron beam and its irradiation effect on optical and electrical properties of CdS thin films

A low energy electron accelerator has been constructed and tested. The electron beam can operate in low energy mode (100 eV to 10 keV) having a beam diameter of 8–10 mm. Thin films of CdS having thickness of 100 nm deposited on ITO-coated glass substrate by thermal evaporation method have been irradiated by electron beam in the above instrument. The I–V characteristic is found to be nonlinear before electron irradiation and linear after electron irradiation. The TEP measurement confirms the n-type nature of the material. The TEP and I–V measurements also confirm the modification of ITO/CdS interface with electron irradiation.      

Thermal,electrical and optical properties of proton-irradiated Makrofol DE 7-2 nuclear track detector

Samples from sheets of the polymeric material Makrofol DE 7-2 have been exposed to 1 MeV protons of fluences in the range 2.5×10¹³–5×10¹⁵ p/cm². The resultant effect of proton irradiation on the thermal properties of Makrofol has been investigated using thermogravimetric analysis and differential thermal analysis (DTA). The onset temperature of decomposition T _o and the activation energy of thermal decomposition E _a were calculated, and the results indicated that the Makrofol detector decomposes in one weight loss stage. Also, the proton irradiation in the fluence range 7.5×10¹³–5×10¹⁵ p/cm² led to a more compact structure of Makrofol polymer, which resulted in an improvement in its thermal stability with an increase in the activation energy of thermal decomposition. The variation of transition temperatures with proton fluence has been determined using DTA. The Makrofol thermograms were characterized by the appearance of an endothermic peak due to the melting of the crystalline phase. The melting temperature of the polymer, T _m, was investigated to probe the crystalline domains of the polymer. At a fluence range of 7.5×10¹³–5×10¹⁵ p/cm², the defect generated destroys the crystalline structure, thus reducing the melting temperature. In addition, the V–I characteristics of the polymer samples were investigated. The electrical conductivity was decreased with the increasing proton fluence up to 5×10¹⁵ p/cm². Further, the refractive index, transmission of the samples and any color changes were studied. The color intensity Δ E was greatly increased with the increasing proton fluence and was accompanied by a significant increase in the red and yellow color components.     

电子束与烟气相互作用机制模拟分析

 电子束在烟气中穿透深度和剂量分布将直接影响废气中硫、氮氧化物的脱除效率。通过理论计算和蒙特卡罗模拟计算得到不同能量电子穿过各种厚度加速器箔窗后能量损失情况；对不同入射能量电子束在烟气中透射深度和轨迹分布进行了模拟计算。结果表明：电子束反应最佳能量为700 keV；利用产生1 m长线状束流的电子加速器进行双面照射，烟道反应室横截面最佳尺寸为1.0 m×3.5 m。     

Fabrication of optical disk mastering using electron beam and embossing process

For the requirement of higher storage capacity of an optical disk, it is a good choice to shorten pit length and linewidth. However, the conventional laser beam mastering is difficult to fabricate smaller pit length and linewidth because of the optical diffraction limit. In order to solve this problem, optical disk mastering using electron beam lithography is presented. The process parameters of the electron beam mastering such as beam current, constant linear stage velocity, developing time, and focus distance are discussed in this research. In the experiments, it was found that the focus distance is an important parameter to fabricate nano-linewidth. The experimental results reveal that the 10 μm variance in focus distance causes about 12% variation in linewidth. The photoresist with nano-pattern defined by eletron beam was transferred into metal Ni–Co (Nickel–Cobalt) mold by electroplating process. The Ni–Co mold with hardness larger than Vicker Hardness (Hv) 650 was developed. Then, with the Ni–Co mold, LIGA (German: Lithographie GaVanoformung Abformung) process was applied to replicate high-density optical disk. The Ni–Co mold is served as a master for hot embossing process to transfer the nano-pattern onto PMMA sheet. Since the feature size is in nano-meter range, the study presents an innovative demolding mechanism to demold the master from the PMMA sheet without damaging the nano-meter structure. A spiral nano-groove with 112 nm in linewidth and 80 nm in depth has been successfully fabricated about 50 Gbytes storage capacity.     

Time-resolved optical absorption in YAlO3 crystals

The present work is devoted to the investigation of transient absorption (TA) induced by a pulsed electron beam (E=250 keV) in pure and doped YAlO₃ (YAP) single crystals. The nature of centers responsible for TA is discussed.     

316L/RAFM钢电子束焊对接接头的微观组织与力学性能研究

在150kV/39mA的焊接参数下进行了316L/RAFM钢电子束焊工艺实验,对接头微观组织与力学性能进行了测试分析。在存在磁偏转的情况下,有效焊接深度达到了18mm,且焊接接头性能良好。     

100 keV回旋电子束参数测量

 利用电子束轰击快响应荧光屏获得电子束横截面图像的方法,对100 keV大回旋轨道空心电子束(Cusp电子束)在横截面上的束轮廓及电荷密度分布进行了测量,计算出回旋电子束半径、螺旋角等参数,并与相同条件下的计算机数值模拟结果进行了对比和分析。测量结果表明初始磁场强度从0.003 5 T增加到0008 2 T时,电子束的拉莫半径从3.2 mm增加到3.9 mm,螺旋角从0.7增加到1.0,满足使用此电子束的回旋行波放大器的调试需求。     

离子束修形中光学元件表面热量沉积数值模拟

根据Sigmund溅射能量沉积理论建立了低能离子入射光学元件引起的能量扰动层厚度模型．理论推导了离子束倾斜入射时光学元件表面的束流密度,并建立了低能离子束对光学元件的热量沉积模型．采用MonteCarlo方法模拟了低能离子与熔石英光学表面的相互作用．分析了离子能量、离子类型、入射角度等参数对光学元件热量沉积和扰动层深度的影响规律．以离子束沉积在工件的能量作为热源,采用有限元分析软件ANSYS模拟了离子束入射工件的温度场分布、温度梯度场分布和温度应力分布．入射表面温度和热梯度呈高斯分布,束斑中心最高并向工件边缘逐渐减小．入射表面束斑区域受热膨胀,其膨胀受到外环区域的制约,从中心区域到大约束斑半峰值半径的区域,所受环向应力为压应力,在大致束斑半峰值半径以外区域为拉应力．     

环形分布激光束引起光学窗口镜热变形理论分析

用有限Hankel变换就常见的环形分布激光束情形,推导得到了激光束辐照透过窗口镜引起热传导温度场和热变形分布的理论解,以此计算结果与实验值相比较,分析了白宝石、石英两种窗口镜在激光辐照下的热变形情况。分析结果表明,在激光束辐照的4s时段内,温升场主要集中在激光束辐照的环形区内,在镜面内远未拉平,由此引起的厚度方向热膨胀变形也很不均匀。材料对激光的吸收系数和热膨胀系数以及热扩散率分别是决定热变形量值大小和空间分布的最主要的物性参数。     

Effect of thickness on physical properties of electron beam vacuum evaporated CdZnTe thin films for tandem solar cells

The thickness and physical properties of electron beam vacuum evaporated CdZnTe thin films have been optimized in the present work. The films of thickness 300 nm and 400 nm were deposited on ITO coated glass substrates and subjected to different characterization tools like X-ray diffraction (XRD), UV‐Vis spectrophotometer, source meter and scanning electron microscopy (SEM) to investigate the structural, optical, electrical and surface morphological properties respectively. The XRD results show that the as-deposited CdZnTe thin films have zinc blende cubic structure and polycrystalline in nature with preferred orientation (111). Different structural parameters are also evaluated and discussed. The optical study reveals that the optical transition is found to be direct and energy band gap is decreased for higher thickness. The transmittance is found to increase with thickness and red shift observed which is suitable for CdZnTe films as an absorber layer in tandem solar cells. The current-voltage characteristics of deposited films show linear behavior in both forward and reverse directions as well as the conductivity is increased for higher film thickness. The SEM studies show that the as-deposited CdZnTe thin films are found to be homogeneous, uniform, small circle-shaped grains and free from crystal defects. The experimental results confirm that the film thickness plays an important role to optimize the physical properties of CdZnTe thin films for tandem solar cell applications as an absorber layer.