Synthesis and Optical Properties of ZnO Nanostructures

ZnO nanostructures with different morphologies were fabricated by changing the partial oxygen pressure. The structures, morphologies and optical properties of ZnO nanostructures were investigated by x-ray diffraction, field emission scanning electron microscopy and photoluminescence (PL) spectra at room temperature. All the samples show preferred orientation along the c-axis. The oxygen partial pressure and the annealing atmosphere have important effect on the PL property of ZnO nanostructures. The high oxygen partial pressure during growth of samples and high-temperature annealing of the ZnO samples in oxygen can increase oxygen vacancies and can especially increase antisite oxygen (OZn) defects, which degraded the near band-edge emission. However, the annealing in 1-12 can significantly modify the NBE emission.     

Transport and Pinning Properties of FeSe北大核心CSCD

利用固相反应法合成了FeSe超导体,根据名义组分和热处理工艺的不同共得到四组FeSe样品,利用X射线衍射仪(XRD)和物性测试系统(PPMS)分别对样品的晶体结构和电输运性能进行表征,并分析了磁通钉扎特性.XRD测试结果表明所有的样品主相均为β-FeSe四方相,同时在样品中也存在少量杂相,包括α-FeSe和Fe,不同名义组分和不同热处理工艺对晶体结构的影响较小.电阻率测试结果表明所有的样品均发生了超导转变,Tc大约为9K,在零场下的转变宽度约为3K,但是四个样品的正常态电阻率明显不同,通过测试四个样品在不同磁场下的电阻率随温度的变化曲线,随着磁场的增加,电阻率曲线出现展宽效应,分析表明FeSe的磁通钉扎行为是由于在不同磁场下热激活磁通蠕动引起的,其上临界磁场可达23T.     

Effect of Ag Doping on Optical and Electrical Properties of ZnO Thin Films

ZnO thin films were prepared on p-type Si (100) substrates by the sol-gel process. The influence of Ag doping at a content of 0.002% on the photoluminescence and current-voltage (I - V) characteristics of ZnO thin films has been investigated. It is found that Ag doping leads to a pronounced increase in the intensity of near band edge emission at 3.23eV and a remarkable red shift of the visible broadband at room temperature. The I - V characteristics of ZnO/p-Si heterojunctions are also changed. These results could be explained by Ag substituting for Zn in Ag doped ZnO thin films.     

Optical design and analysis of illumination system based on augmented reality北大核心CSCD

照明系统是增强现实光学系统的重要组成部分,其体积、照度均匀性、能量利用率直接影响增强现实照明系统的质量,因此在照明系统中对光源二次配光非常重要。针对增强现实系统的自由曲面透镜形式和照明系统开展研究,重点分析准直系统集光角度与体积的对应关系,在对光源准直系统的面型构建详细分析基础上,对中心透射边缘反射的折反射式准直系统的面型进行求解,结合偏微分方程法和划分网格法,设计了自由曲面透镜,该系统与偏振分光棱镜共同组成硅基液晶（liquid crystal on silicon,LCoS）照明系统。仿真分析结果表明:系统照度均匀性达到91.96%,若不计偏振影响,照明系统光学效率达到66.6%。该系统具有结构简单紧凑、体积小、质量轻、照度均匀性高等特点,满足增强现实眼镜的需求。     

Linear and Nonlinear Optical Properties of Quasicrystals

An investigation is carried out on the linear and nonlinear optical properties of quasicrystaJs. The linear and nonlinear susceptibilities are determined for two- and three-dimensional ctuasicrystals. The results show that for optical linearity, two-dimensional quasicrystals are uniaxial, while icosahedral quasicrystals are optically isotropic. Meanwhile all ctuasicrystals, except those with 5, 5m, N, Nmm (N = 8, 10, 12) symmetries, have no the firstorder optical nonlinearity. The tensor scheme of the first order nonlinear susceptibility is the same for these eight exceptional kinds of quasicrystals.     

Comparisons of Structural and Optical Properties of ZnO films Grown on Sapphire and Si（001）

Zinc oxide films were grown on sapphire and Si(001) substrates by reactive electron beam evaporation at low substrate temperatures,Atomic force microscopy(AFM),x-ray diffraction(XRD),and photoluminescence excitation(PLE) are employed to characterize the as-grown films.The AFM measurements have shown that all of the ZnO films present pillar-like growth properties.but the dimensional uniformity of the ZnO crystal pillars grown on sapphire was better than that on Si(001),The XRD results indicated that the prepared ZnO films both on sapphire and Si(001) were all highly c-axis oriented.the linewidths of ZnO(002)are only 0.19 and 0.28,respectively,The PLE characterizations revealed the continum absorption of the samples grown on sapphire,However,in the PLE spectra of the ZnO films grown on Si(001) substrates,a broad peak appears at the high-energy region,which indicates the formation of ZnO quantum dot structures on Si(001).     

Electrical and Optical Properties of Bulk ZnO Single Crystal Grown by Flux Bridgman Method

Zinc oxide （ZnO） single crystals are grown by the modified vertical Bridgman method using a PbF2 flux. The maximum size of the as-grown ZnO crystal is about Φ25 mm×5mm. The transmittance of the as-grown ZnO crystal is more than 70% in the range of 600-800hm and the optical band gap is estimated to be 3.21eV. The photoluminescence spectrum indicates that the as-grown ZnO crystal has a very low concentration of native defects and is much closed to its stoichiometry. The electrical measurement exhibits that the ZnO crystal has low electrical resistivity of 0.02394Ωcm^-1 and a high carrier concentration of 2.10×10^18cm^-3.     

Absorption and Fluorescence Properties of Chromophoric Dissolved Organic Matter Produced by AlgaeSCIEI北大核心CSCD

Four kinds of diatom (Chaetoceros curvisetus, Phaeodactylumtricornutum, Nitzschia closterium f. minutissima and Navicula halophile) and two kinds of dinoflagellates (Prorocentrum donghaiense and Gymnodinium) were cultured under laboratory conditions. Variations of optical properties of chromophoric dissolved organic matter (CDOM) were studied with absorption and fluorescence excitation-emission matrix spectroscopy(EEM) during growth of marine microalgae in incubation experiment. Absorption spectrum revealed absorption coefficient a(355) (CDOM absorption coefficients at 355 nm) of 6 kinds of marine microalgae above increased by 64.8%, 242.3%, 535.1%, 903.2%, 836% and 196.4%, respectively. Simultaneously, the absorption spectral slope(Sg), determined between 270 and 350 rim, representing the size of molecular weight of CDOM and humic-like composition, decreased by 8.7%, 34.6%, 39.4%, 53.1%, 46.7%, and 35.7%, respectively. Applying parallel factor analysis (PARAFAC) together with EEM got four components of CDOM: C1(Ex/Em=350(260) nm/450 nm), C2 (Ex/Em=260 (430) nm/525 nm) 03 (Ex/Em=325 nm/400 nm) and C4(Ex/Em=275 nm/325 nm), which.were relative to three humic-like and one protein-like fluorescent components of Nitzschia closterium f. minutissima and Navicula halophile. In incubation experiment, fluorescence intensity of these four components during growth of Nitzschia closterium f. minutissima increased by, respectively, 8.68, 24.9, 7.19 and 39.8 times, and those of Navicula halophile increased by 2.64, 0.07, 4.39 and 12.4 times, respectively. Significant relationships were found between the fluorescence intensity of four components of CDOM, a(355) and Sg. All results demonstrated that both content and molecular weight of CDOM produced by diatom and dinoflagellate studied in incubation experiment increased, but these two parameters changed more obviously of the diatom than those of dinoflagellate; the proportion of humic-like components in the composition of CDOM also increased clearly with the growth of marine microalgae, but protein-like fluorescent component had only a slow growth. Furthermore, the absorption spectrum of CDOM produced by different species of algae changed obviously and the relative composition fluorescence intensity of CDOM produced by different microalgae were found to vary among different composition from EEM, which suggested CDOM produced by different microalgae make quite different contributions to CDOM in natural seawater.     

Fabrication and Photoluminescence Properties of ZnO Nanorods

ZnO nanorods are successfully synthesized by annealing the precursors in argon with the chemical precipitation method. The structural and optical properties of ZnO nanorods are investigated. As annealing temperature increases, the intensity of the green emission increases while the intensity of the yellow emission decreases. The result suggests that the green emission depends strongly on the annealing temperature.     

Optical and Photoluminescent Properties of Thin-Film ZnO–PLZT Structure in the UV and Visible Spectral Regions

Optics and Spectroscopy - The structural, optical, and photoluminescent properties of the thin-film structure ZnO–PLZT ferroelectric ceramics are studied. The results of X-ray diffraction...     

Properties and Stability of Nanosecond Optical Limiting of Gold Nanoclusters

Optical limitation(OL) performances of the gold nanoclusters protected by C60-tpy have been investigated with 8 ns pulses at 532nm.The experimental results show that the nanocomposite possesses OL effects superior to C60 in toluene.The main mechanism of OL is attributed to the nonlinear absorption and subsequently induced nonlinear scattering during excitation of the pulse.Ageing of the nanocomposite chloroform solution in air lowers the OL performances by a factor of 2.4,which can be due to the formation of aggregates of large gold particles.     

Preparation and Luminescent Properties of ZnO Microrods and Microtubes

Hexagonal ZnO microrods and sub-microrods have been prepared through thermal decomposition of an equimolar (0.1 M) aqueous solution of Zn(NO3)2.4H20 and (CH2)6N4 a~t 90~C for different times (10-46h). The microrods were transformed into hollow hexagonal ZnO microtubes when the growth time reached 46 h. The Raman spectra and the photoluminescent (PL) spectra were measured. The PL spectra of microrods consist of two strong narrow near-UV bands at 380 nm and 400 nm assigned to free exciton emission and exciton-exciton collision, respectively.The PL spectrum of ZnO microtubes show only one peak in the near-UV region with peak located at 380nm with FWHM of about 20nm assigned to free exciton emission. When the growth time increased, the peak intensity of near-UV band decreased.     

Growth and Optical Properties of Double Heterostructure GaN／InGaN／GaN Films with Large Composition

The double heterostructure GaN/InGaN/GaN films with different thicknesses of the InGaN layer were grown at 780℃ or 800℃ by metal-organic chemical vapour deposition.The samples were investigated using x-ray diffraction (XRD),room-temperature photoluminescence (PL) and Raman scattering.The dependences of the samples on both the growth temperature and the thickness of the InGaN layer were studied.The composition of InGaN was determined by the results of XRD,and the bowing parameter of InGaN was calculated in terms of the PL spectra.When the thickness of the InGaN layer was reduced,the phase separation of InGaN was found in some samples.The raman frequency of the A1(LO) and E2(low) modes in all the samples shifted and did not agree with Vegard‘s law.     

Preparation and Dielectric Properties of Nanostructured ZnO Whiskers

By a novel controlled combustion synthesis method, a large number of nanostructured ZnO whiskers with different morphologies, such as tetra-needles, long-leg tetra-needles and multi-needles, are prepared without any additive in open air at high temperature. The morphologies and crystalline structures of the as-prepared ZnO nanostructured whiskers are investigated by SEM and XRD. The possible growth mechanism on the nanostructured ZnO whiskers is proposed. The experimental results indicate that the dielectric constants and losses of the nanostructured ZnO whiskers are very low, demonstrating that the nanostructured ZnO whiskers are low-loss materials for microwave absorption in X-band. However, obvious microwave absorption in nanostructured ZnO whiskers is observed. The quasi-microantenna model may be attributed to the microwave absorption of the ZnO whiskers.     

Optical Properties and Structure Analyses of Zinc Sulfide Nanorods

ZnS nanorods were synthesized using solvothermal process with ethylenediamine as a bidentate ligand to form Zn^2 complexes and dodecylthiol providing an effective control over the crystal growth of ZnS nanorod. The microstructure of the nanorods was characterized by x-ray diffraction and transmission-electron microscopy. The optical properties of ZnS nanorods were examined by the photoluminescence spectrum.     

Study on the Non-Uniformity Calibration of Space-Born Differential Optical Absorption SpectrometerSCIEI北大核心CSCD

Space-borne differential optical absorption spectrometer is a nadir viewing wide field imaging spectrometer, which adopts two-dimensional CCD detector arrays. The pixel response non-uniformity exists in each column of spatial dimension, which will introduce high-frequency instrument-related spectral structures in the measurement data. However, the non-uniformity calibration of space-born imaging spectrometer is difficulty due to two factors: the spectral smile effect and the large field of view. For this reason, a method of non-uniformity calibration is discussed in detail. The result shows that the spectral smile effect and non-uniformity of full FOV image are corrected effectively, and high-frequency instrument-related structures in the measurement data are removed.     

Influence of Growth Temperature and Trimethylindium Flow of InGaN Wells on Optical Properties of InGaN Multiple Quantum-Well Violet Light-Emitting Diodes

An InGaN multiple-quantum-well (MQW) violet-light-emitting diode (LED) is grown by low-pressure metalorganic chemical vapour deposition. It is found that photoluminescence wavelength of the InGaN MQW violet LED is lengthened with increasing growth temperature and with the increasing trimethylindium flow of the InGaN wells. The electroluminescence peak wavelength of the violet LED are about 401 nm with full width at half maximum of 14nm, and the output power in injection current of 2OmA at room temperature is 4.1mW.     

Electrical and Optical Properties of Polyvinyl Chloride–Polyacetylene Copolymer

Technical Physics - The temperature dependence of the conductivity of heat-treated polyvinyl chloride films containing conjugated double carbon–carbon bonds in the chain of its macromolecules...     

Electronic Structure and Optical Properties of Semiconducting Orthorhombic BaSi2

Full potential linearized augmented plane wave （FPLAPW） method calculations are carried out for semiconducting orthorhombic BaSi2. The optical properties and the origin of the different optical transitions are investigated. Our calculated band gap of 1.0918eV is indirect, which is in good agreement with the experimental result. The bonds between Ba and Si are considered to be electrovalent bond. The anlsotropy in the imaginary part ε2（w） and real part εl（w） of the optical dielectric tensor are analysed. The contributions of various transition peaks are explained from the imagnary part of the dielectric function.