Matrixreaktion von SiO mit F2. IR-spektroskopischer nachweis von molekularem OSiF2

SiO reacts with F₂, in an argon matrix after photolysis with a high-pressure mercury lamp to form OSiF₂. Isotopic splitting (¹⁶O/¹⁸O and ²⁸Si/²⁹Si) and force constant calculations show that the 6 fundamentals observed can be assigned to the planar molecule OSiF₂. The value of the force constant of the SiO double bond, which was calculated as approximately 9 × 10² N m^?1 in earlier investigations, is confirmed by this work.     

A novel approach for measuring ultra‐thin,buried SiO2 film thickness

Accurate measurement of physical thickness of thin SiO₂ films is of great interest to the semiconductor industry. Existing inspection techniques are subject to large error when the oxide thickness falls below 2 nm. This work explored a new approach with improved accuracy to the measurement of thickness of thin oxide films. The new method utilizes dynamic SIMS with a primary ion beam of one isotope of oxygen (¹⁶O or ¹⁸O) at normal incidence and detecting negative secondary ions of another isotope (¹⁸O or ¹⁶O, respectively) inside SiO₂. The experiment was performed by using an ¹⁶O₂⁺ primary beam and detecting ¹⁸O^? as characteristic secondary ions for SiO₂. We substantiated that the matrix effect was eliminated during profiling through the SiO₂/Si interface in a poly Si/SiO₂/Si stack with an O₂⁺ beam at normal incidence, which is crucial for reliable quantification of oxygen amount inside SiO₂. The high ion yield of ¹⁸O^? and negligible contribution from the mass interference of¹⁶ OH₂^? ensured measurement of the total amount of oxygen inside an SiO₂ film with good sensitivity. By assuming that the silicon oxide is in the form of stoichiometric SiO₂, which is the case for those layers grown with dry oxidation, the measured amount of oxygen can be readily converted into the thickness of SiO₂. This technique provides reproducible measurement of the thickness of SiO₂ films and potentially a good accuracy if a reference material is well calibrated. Copyright © 2009 John Wiley & Sons, Ltd.     

Dimeres SiO2 Matrix-IR-Untersuchungen und ab initio SCF-Rechnungen

Molecular SiO₂, Matrix IR Investigations and Ab Inito SCF-Calculations Dimeric SiO₂ is formed in a matrix reaction between (SiO)₂ and O₂. Its structure can be deduced from the IR spectra of different ¹⁸O-substituted isotopomers. The observed frequency shifts (¹⁶O/¹⁸O and ²⁸Si/²⁹Si) are in accordance with those calculated by a normal coordinate analysis. The structure concluded from experimental data is also confirmed by quantum chemical calculations. With the help of these calculations the dimerisation energy 2SiO₂ ? (SiO₂)₂ is obtained: ?453 kJ mol^?1. The mechanism of formation of (SiO₂)₂ from (SiO)₂ and O₂ is discussed with respect to some similarities to the elementary process during oxidation of the surface of silicon wafers.     

Matrixreaktion von GeO mit F2. IR-spektroskopischer nachweis von molekularem OGeF2

GeO reacts with F₂ in an argon matrix after photolysis with a high-pressure mercury lamp to form OGeF₂. Isotopic splitting (¹⁶O/¹⁸O and ⁷⁰Ge/⁷²Ge/⁷⁴Ge) and force constant calculations show that the fundamentals observed can be assigned to a planar molecule OGeF₂. The value of the force constant of the GeO double bond, 7.43 × 10² N m^?1, is as expected (GeO₂ 7.32 × 10² N m^?1), but the GeF bond is unexpectedly weak (f_GeF = 5.01 × 10² N m^?1).     

Small silicon oxide clusters: chains and rings

We study several silicon oxide cluster series with different Si:O stoichiometries using photoelectron spectroscopy (PES) of size-selected anions: (SiO) _n ^? (n=3–5), (SiO₂) _n ^? (n =1–4), and Si(SiO₂) _n ^? (n = 2,3). The (SiO)_n clusters are shown to be closed-shell molecules and the HOMOLUMO gaps are observed from the PES spectra to decrease for larger n. These clusters are shown to have ring sturctures. Si₃O₄ is known to have a D_2d structure with two perpendicular Si₂O₂ rhombuses.The PES spectrum of Si₄O ₆ ^? is very similar to that of Si₃O ₄ ^? . It is concluded that Si₄O₆ has a similar structure with a chain of three Si₂O₂ rhombuses. The (SiO₂)_n clusters all exhibit high electron affinities and only one band is observed at 4.66 eV photon energy. These clusters are shown to have similar chain structures containing Si₂O₂ rhombuses, but the two terminal Si atoms are bonded to an extra 0 atom each. The possibility of using these clusters to provide structural models for oxygen-deficient defects in bulk silicon oxides is also discussed.     

Formation mechanisms of Si3N4 and Si2N2O in silicon powder nitridation

Commercial silicon powders are nitrided at constant temperatures (1453 K; 1513 K; 1633 K; 1693 K). The X-ray diffraction results show that small amounts of Si₃N₄ and Si₂N₂O are formed as the nitridation products in the samples. Fibroid and short columnar Si₃N₄ are detected in the samples. The formation mechanisms of Si₃N₄ and Si₂N₂O are analyzed. During the initial stage of silicon powder nitridation, Si on the outside of sample captures slight amount of O₂ in N₂ atmosphere, forming a thin film of SiO₂ on the surface which seals the residual silicon inside. And the oxygen partial pressure between the SiO₂ film and free silicon is decreasing gradually, so passive oxidation transforms to active oxidation and metastable SiO(g) is produced. When the SiO(g) partial pressure is high enough, the SiO₂ film will crack, and N₂ is infiltrated into the central section of the sample through cracks, generating Si₂N₂O and short columnar Si₃N₄ in situ. At the same time, metastable SiO(g) reacts with N₂ and form fibroid Si₃N₄. In the regions where the oxygen partial pressure is high, Si₃N₄ is oxidized into Si₂N₂O.     

Study of CuCl2 Supported on SiO2 and Al2O3

The nature and stability of surface species of CuCl₂ supported on α-Al₂O₃, γ-Al₂O₃, and SiO₂ were investigated by using X-ray diffraction techniques and reflectance spectroscopy. No specific chemical interaction of CuCl₂ is observed on an inert α-Al₂O₃ support, as opposed to hydrated carriers as SiO₂ and γ-Al₂O₃. On these supports the coordination sphere of Cu²⁺ consists of surface groups (OH^? or O^? at drying and activation, resp.), H₂O and Cl^?, with the H₂O ligands decreasing in concentration in the process of impregnation, drying and calcination. γ-Al₂O₃ samples, calcined at 400°C, show γ-Cu₂(OH)₃Cl as opposed to CuAl₂O₄ at higher temperatures. The absence of Cu₂(OH)₃Cl on SiO₂-supported samples is related to the acid-base characteristics of the carriers. The various supports can be arranged in the following order of stability of the complexes formed: γ-Al₂O₃ > SiO₂ ? -Al₂O₃.     

Ab initio calculations of oxygen nuclear quadrupole coupling constants and oxygen and silicon NMR shielding constants in molecules containing SiO bonds

Ab initio coupled Hartree—Fock perturbation theory (CHFPT) calculations employing large gaussian basis sets have been used to evaluate the electric field gradient at O, q^o, and the NMR shieldings at O and Si, σ^o and σ^Si, in the molecules SiO, SiO₂, Si₂O₂, H₂SiO, SiO⁻⁴₄, Si(OH)₄ and (H₃Si)₂O. Species containing Si bonded to three or fewer atoms have small NMR shieldings at both O and Si while those with four-coordinate Si have systematically larger O and Si shieldings. A significant positive correlation is observed between calculated O and Si NMR shieldings. Reduction of the SiO distance in SiO⁴⁻₄ and H₃SiOSiH₃ gives a significant reduction in the magnitude of q^o and a small increase in σ. Anisotropies in σ^Si are large for two- and three-coordinate Si (200–900 ppm) but for (H₃Si)₂O the σ^Si anisotropy is only ≈60 ppm. Anisotropies in σ^o are generally larger than those in σ^Si, with values larger than 200 ppm for both SiO⁻⁴₄ and (H₃Si)₂O. Values of q^o for SiO⁴⁻₄ and (H₃Si)₂O are in qualitative agreement with experimentally determined values for nesosilicates and SiO₂ polymorphs, respectively, but all the q^o values appear to be exaggerated at the Hartree—Fock level. Also, q^o values are not greatly different for the exotic species SiO, Si₂O₂, etc. compared to the typical silicate models SiO⁴⁻₄ and (H₃Si)₂O. Calculated isotropic chemical shifts yield good values for the Si chemical shift differences of SiF₄, SiO⁴⁻₄ and (H₃Si)₂O and for the O chemical shift difference of SiO⁴⁻₄ and H₂O. For SiO⁴⁻₄ the paramagnetic contribution to the Si shift, σ^pSi is dominated by contributions from the t₂ symmetry SiO bonding orbital and σ^pO is dominated by contributions from the t₂ symmetry O 2p non-bonding orbital.     

Thermische Zersetzung von Afwillit Ca3(SiO3OH)2 · 2 H2O

Thermal Decomposition of Afwillite Ca₃(SiO₃OH)₂ · 2 H₂O Using the molybdate method [1], infrared, Raman, and high resolution solid state ¹H and ²⁹Si NMR spectroscopy two intermediate phases can be identified in the process of dehydration of afwillite: At temperatures of 250 to 300°C a non-crystalline phase is formed mainly (about 80 to 90% referred to Si) with a structure similar to mineral killalaite Ca₃OH(Si₂O₆OH) [2] and phase F [3]. Between 300 and 500°C this compound is converted to a non-crystalline kilchoanite-like phase γ-Ca₂SiO₄ · Ca₄Si₃O₁₀ [4], consisting of ordered γ-Ca₂SiO₄ and disordered trisilicate layers. By a side reaction polysilicate (about 10 to 20% referred to Si) is formed.     

Probing matrix isolated SiO molecular clusters by X-ray absorption spectroscopy

TheK absorption edge of Si in matrix isolated SiO molecular clusters was studied for various dilutionsR(Ar/SiO). The spectra from the clusters at different dilutions show a dramatic evolution in their relative intensity. Two types of spectral features from Si atoms present in the clusters could be detected in the spectra. The first is due to the Si atoms which are tetrahedrally coordinated to Si and O atoms responsible for the presence of different Si oxidation states. The Si⁺, Si³⁺ and Si⁴⁺ oxidation states in SiO clusters and in bulk were readily identified. The Si²⁺ oxidation state whose abundance in SiO clusters is predicted by structural considerations is not clearly observed. The second type of feature, whose intensity decreases with the dilution R, can be attributed to the presence of Si atoms possessing unsaturated bonds. In order to explain this the clustering of 4–6 SiO molecules is simulated to yield different tetrahedral bonding microstructures in which the well coordinated as well as under coordinated Si atoms are present. The behaviour of the spectral features resulting from these microstructures is discussed.     

β‐Y2Si2O7, a new thortveitite‐type compound,determined at 100 and 280 K

A new form of Y₂Si₂O₇ (diyttrium heptaoxodisilicate) has been synthesized which is isotypic with thortveitite, Sc₂Si₂O₇, and crystallizes in the centrosymmetric space group C2/m, both at 100 and 280 K. The Y³⁺ cation occupies a distorted octahedral site, with Y—O bond lengths in the range 2.239 (2)–2.309 (2) Å. The SiO₄ tetrahedron is remarkably regular, with Si—O bond lengths in the range 1.619 (2)–1.630 (2) Å. The bridging O atom of the Si₂O₇ pyrosilicate group shows a large anisotropic displacement perpendicular to the Si—O bond. Changes in lattice and structural parameters upon cooling are small with, however, a distinct decrease of the anisotropic displacement of the briding O atom. Structure solution and refinement in the non‐centrosymmetric space group C2 are possible but do not yield a significantly different structure model. The Si—O—Si bond angle of the isolated Si₂O₇ groups is 179.2 (1)° at 280 K in C2 and 180° per symmetry in C2/m. The C2/m structure model is favoured.     

Sm3Cl[SiO4]2: Ein chlorarmes Chloridorthosilicat des Samariums

Sm₃Cl[SiO₄]₂: A Chlorine‐poor Chloride Orthosilicate of Samarium Pale yellow, plate‐like single crystals of Sm₃Cl[SiO₄]₂ (orthorhombic, Pnma; a = 701.74(8), b = 1800.8(2), c = 626.63(7) pm; Z = 4) are obtained upon the reaction of SmCl₃, Sm₂O₃ and SiO₂ (”︁Kieselgel”︁”︁) in 1 : 4 : 6 molar ratios, most advantageously in the presence of substantial amounts of NaCl as fluxing agent, after seven days at 850 °C in evacuated silica ampoules. The B‐type crystal structure (isotypic with e. g. Yb₃Cl[SiO₄]₂) contains discrete orthosilicate tetrahedra [SiO₄]^4– which form anionic double layers ({(Sm1)₂[SiO₄]₂}^2–) with (Sm1)³⁺. These are alternatingly sheethed along [010] with cationic monolayers ({(Sm2)Cl}²⁺) consisting of (Sm2)³⁺ and Cl^–. Both crystallographically independent Sm³⁺ cations exhibit coordination numbers of eight (Sm1: 1 Cl + 7 O; Sm2: 2 Cl + 6 O) with respect to the involved electronegative particles.     

Co3O4/SiO2 nanocomposites for supercapacitor application

In this study, Co₃O₄/SiO₂ nanocomposites have been successfully synthesized by citrate–gel method by utilizing SiO₂ matrix for Co₃O₄ embedment. Spectroscopy analyses confirm the formation of high crystalline Co₃O₄ nanoparticles; meanwhile, microscopy findings reveal that the Co₃O₄ nanoparticles are embedded in SiO₂ matrix. Electrochemical properties of the Co₃O₄/SiO₂ nanocomposites were carried out using cyclic voltammetry (CV), galvanostatic charge–discharge, and electrochemical impedance spectroscopy (EIS) in 5 M KOH electrolyte. The findings show that the charge storage of Co₃O₄/SiO₂ nanocomposites is mainly due to the reversible redox reaction (pseudocapacitance). The highest specific capacitance of 1,143 F g ^?1 could be achieved at a scan rate of 2.5 mV s^?1 in the potential region between 0 and 0.6 V. Furthermore, high-capacitance retention (>92 %) after 900 continuous charge–discharge tests reveals the excellent stability of the nanocomposites. It is worth noting from the EIS measurements that the nanocomposites have low ESR value of 0.33 Ω. The results manifest that Co₃O₄/SiO₂ nanocomposites are the promising electrode material for supercapacitor application.     

29Si- und 23Na-Festkörper-MAS-NMR-Untersuchungen an Modifikationen des Na2Si2O5

²⁹Si and ²³Na Solid State MAS NMR Investigations of Modifications of the Sodium Phyllosilicate Na₂Si₂O₅ . The results of ²⁹Si- and ²³Na-MAS NMR investigations on four modifications of the synthetic Na₂Si₂O₅ demonstrate that the α-, β- and δ-modifications are characterized unequivocally by the parameters of the corresponding NMR spectra. The studies on γ-Na₂Si₂O₅ show that this sample contains a large amount of secondary compounds. For α- und β-Na₂Si₂O₅ the the structural details of the silicate sheets are reflected by the ²⁹Si MAS NMR spectra while from the ²³Na MAS NMR spectra conclusions about the coordination number of the sodium atoms can be derived. The ²⁹Si MAS NMR investigations on δ-Na₂Si₂O₅ indicate that the silicate sheet of this modification consist of identical SiO₄-tetrahydra the parameter of which differ from those of α- and β-Na₂Si₂O₅. The ²³Na MAS NMR studies show that in the interlayer space of δ-Na₂Si₂O₅ two nonidentical sodium atoms exists. The NMR results give rise to the suggestion that one of the sodium is surrounded by five and the other one by six oxygen atoms.     

Zwei Chloridsilicate des Yttriums: Y3Cl[SiO4]2 und Y6Cl10[Si4O12]

Two Chloride Silicates of Yttrium: Y₃Cl[SiO₄]₂ and Y₆Cl₁₀[Si₄O₁₂] The chloride‐poor yttrium(III) chloride silicate Y₃Cl[SiO₄]₂ crystallizes orthorhombically (a = 685.84(4), b = 1775.23(14), c = 618.65(4) pm; Z = 4) in space group Pnma. Single crystals are obtained by the reaction of Y₂O₃, YCl₃ and SiO₂ in the stoichiometric ratio 4 : 1 : 6 with ten times the molar amount of YCl₃ as flux in evacuated silica tubes (7 d, 1000 °C) as colorless, strongly light‐reflecting platelets, insensitive to air and water. The crystal structure contains isolated orthosilicate units [SiO₄]^4– and comprises cationic layers {(Y2)Cl}²⁺ which are alternatingly piled parallel (010) with anionic double layers {(Y1)₂[SiO₄]₂}^2–. Both crystallographic different Y³⁺ cations exhibit coordination numbers of eight. Y1 is surrounded by one Cl^– and 7 O^2– anions as a distorted trigonal dodecahedron, whereas the coordination polyhedra around Y2 show the shape of bicapped trigonal prisms consisting of 2 Cl^– and 6 O^2– anions. The chloride‐rich chloride silicate Y₆Cl₁₀[Si₄O₁₂] crystallizes monoclinically (a = 1061,46(8), b = 1030,91(6), c = 1156,15(9) pm, β = 103,279(8)°; Z = 2) in space group C2/m. By the reaction of Y₂O₃, YCl₃ and SiO₂ in 2 : 5 : 6‐molar ratio with the double amount of YCl₃ as flux in evacuated silica tubes (7 d, 850 °C), colorless, air‐ and water‐resistant, brittle single crystals emerge as pseudo‐octagonal columns. Here also a layered structure parallel (001) with distinguished cationic double‐layers {(Y2)₅Cl₉}⁶⁺ and anionic layers {(Y1)Cl[Si₄O₁₂]}^6– is present. The latter ones contain discrete cyclo‐tetrasilicate units [Si₄O₁₂]^8– of four cyclically corner‐linked [SiO₄] tetrahedra in all‐ecliptical arrangement. The coordination sphere around (Y1)³⁺ (CN = 8) has the shape of a slightly distorted hexagonal bipyramid comprising 2 Cl^– and 6 O^2– anions. The 5 Cl^– and 2 O^2– anions building the coordination polyhedra around (Y2)³⁺ (CN = 7) form a strongly distorted pentagonal bipyramid.     

Electronic distribution of SiO by x-ray spectroscopy

Si Kβ X-ray emission has been comparatively studied in Si, SiO and SiO₂. Taking into account the chemical shift of the inner K level, the position of the valence band of SiO relative to those of SiO₂ and Si has been obtained. The existence of silicon monoxide is confirmed.     

Quantitative distribution analysis of B, As and Sb in the layer system SiO2/Si with SIMS: elimination of matrix and charging effects

Summary The measurement technique for quantitative distribution analysis of B, As and Sb in the layer system SiO₂/ Si was optimized. Minimization of the matrix effect is achieved by applying an increased oxygen pressure (5·10^–5 mbar) in the sample chamber. Oxygen saturation is monitored by the ratio of the intensities of the molecular ions SiO ₂ ⁺ and Si ₂ ⁺ .In the relevant pressure range of 10 ^–6 mbar to 5·10^–5 mbar the intensity ratio of ⁶¹(SiO ₂ ⁺ )/⁵⁹(Si ₂ ⁺ ) is increased by a factor of 5–7.5 relatively to the signal ratios of ¹¹B⁺/²⁸Si²⁺, ⁷⁵As²⁺/²⁸Si²⁺ or ¹²¹Sb⁺/²⁸Si²⁺ which are corresponding to the relative sensitivity factors. Therefore we conclude that the matrix effect is minimized within the analytical error if the signal ratio of ⁶¹(SiO ₂ ⁺ )/⁵⁹(Si ₂ ⁺ ) is practically constant in SiO₂ and Si.Charging effects are minimized by reducing the surface charge with electron bombardment during analysis and correction of the residual charging effects by computer controlled biasing of the accelerating voltage of the secondary ions. Especially for analysis of As and Sb with energy filtering it is important that biasing of the accelerating voltage yields a highly reproducible energy of the secondary ions. To control the reproducibility we use the steep slope of the energy distribution of ⁷²(SiO ₂ ⁺ ). If the kinetic energy of the secondary ions is changed by 10 eV the signal of the analytical ions (e.g., ⁷⁵As⁺ or ¹²¹Sb⁺) is decreased by only 40% compared to one order of magnitude for the signal of ⁷²(Si₂O⁺). By the use of this technique measurements in SiO₂ are even possible with manual biasing of the accelerating voltage if no electron gun and no computer routine are available.The measurement technique was applied to provide data for process modeling. Some examples are presented at the end of the paper.

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Quantitative Verteilungsanalyse von B, As und Sb mit SIMS im Schichtsystem SiO₂/Si: Eliminierung von Matrix- und Aufladungseinflüssen

Abbreviations Ip primary ions current - j primary ions current density - pO₂ oxygen pressure registered by a vacuum gauge in the sample chamber (not actual pressure at the surface of the sample) - R rastered area - d _A diameter of analyzed area - d _c diameter of contrast aperture; e.g., electron gun - M m/e mass to charge ratio of an atomic or molecular ion     

Solid-state high-resolution 29Si NMR in zunyite

High-resolution ²⁹Si NMR spectra of zunyite Si₅Al₁₃O₂₀ (OH,F)₁₈Cl have been studied by magic-angle sample spinning in combination with high-power proton decouplina and polarization transfer. The isotropic ²⁹Si chemical shift depends mainly on the number of Si-O-Si bridges and the bond angles in these bridges connecting the different SiO₄ tetrahedra.     

Comprehension of the S(V)LS mechanism growth of silicon-based nanowires

A comprehensive thermodynamic assessment has been carried out on the Au–Si–O system involved in the growth mechanism of Silicon NanoWires (SiNW) via the solid–liquid–solid process. The driving force needed to trigger the SiNW precipitation is supersaturation of liquid alloy Au–Si. Our model demonstrates, for the first time, how and from where supersaturation is reached. Supersaturation is not due to the migration of silicon from the wafer as claimed by many researchers, but to the existence of SiO volatile species resulting from the metastable equilibrium SiO_{2, amorphous}/Si_wafer. More interesting is that the partial pressure P_SiO does impose an initial minimum radius of the first generation of nanowires in the range of 10 nm. After that, other generations of nanowires will grow due to the new metastable equilibrium SiO_{2, amorphous}/Si_nanowire.     

In situ XPS and SIMS analysis of O2+ beam‐induced silicon oxidation

The chemical composition variation of silicon under 4 keV O₂⁺ ion beam bombardment at different incident angles was studied by in situ small‐area XPS. The changes in secondary ion profile (³⁰Si⁺, ⁴⁴SiO⁺, ⁵⁶Si₂⁺, ⁶⁰SiO₂⁺) during oxygen ion beam bombardment also have been monitored. We present a direct correlation of the changes in secondary ion depth profile with surface composition during sputtering. Evolution of the secondary ion profile obtained from SIMS shows similar trends with variation of oxygen concentration in the crater surface measured by XPS. It is shown that when the oxygen ion beam incidence angle is < 40° silicon dioxide is the dominant species on the crater surface and the matrix ion species ratio (MISR) value for ⁴⁴SiO⁺/⁵⁶Si₂⁺ is higher than for ³⁰Si⁺/⁵⁶Si₂⁺. For incidence angles of >40°, the formation of sub‐oxide is favoured and thus the MISR value for ⁴⁴SiO⁺/⁵⁶Si₂⁺ is lower than for ³⁰Si⁺/⁵⁶Si₂. At 40° bombardment there are similar amounts of SiO₂ and sub‐oxides present on the crater surface and the MISR values for ⁴⁴SiO⁺/⁵⁶Si₂⁺ and ³⁰Si⁺/⁵⁶Si₂⁺ are also similar. Copyright © 2004 John Wiley & Sons, Ltd.