Lasing from a solid-state Ca<Subscript>3</Subscript>Ga<Subscript>2</Subscript>Ge<Subscript>3</Subscript>O<Subscript>12</Subscript>:Nd<Superscript>3+</Superscript> laser at a high power of diode pumping

Experimental data for cw lasing from a compact solid-state laser based on a neodymium-doped calcium-gallium-germanium-garnet crystal (Ca₃Ga₂Ge₃O₁₂:Nd³⁺) at a wavelength of 1.06 μm in the case of intense diode pumping are reported. The laser output reaches 0.7 W for a cavity 15 mm long and an active element 1 mm thick. It is shown that the output power is limited by a thermal lens placed in the active element.     

Electron paramagnetic resonance of Ce<Superscript>3+</Superscript> and Nd<Superscript>3+</Superscript> impurity ions in YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>6.13</Subscript>

The electron paramagnetic resonance (EPR) spectra of Ce³⁺ and Nd³⁺ impurity ions in unoriented powders of the YBa₂Cu₃O_6.13 compound are observed and interpreted for the first time. It is demonstrated that, upon long-term storage of the samples at room temperature, the EPR signals of these ions are masked by the spectral line (with the g factor of approximately 2) associated with the intrinsic magnetic centers due to the significant increase in its intensity.     

Identification of luminescence bands of Nd<Superscript>3+</Superscript> ions in yttrium aluminates Y<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript> and YAlO<Subscript>3</Subscript>

The pulsed cathodoluminescence spectra of yttrium aluminum garnet and perovskite activated by neodymium are investigated at room temperature in the wavelength range 250–750 nm. The luminescence bands are identified, and all of them are assigned to Nd³⁺ transitions, including those from the doublet levels.     

Spectral properties of Nd<Superscript>3+</Superscript> ions in samples of transparent Y<Subscript>2</Subscript>O<Subscript>3</Subscript> ceramics

The spectral and luminescent characteristics of samples of Y₂O₃:Nd³⁺ ceramics obtained from different precursors under different preparation conditions (the concentration of an HfO₂ compacting additive, the temperature and time of synthesis) are studied at 300 and 77 K. It is shown that the spectral positions of absorption and luminescence lines of ceramics correspond to those of a Y₂O₃:Nd³⁺ single crystal. At the same time, the absorption and luminescence spectra show an inhomogeneous broadening, characteristic of disordered crystals and glass. The energies of the ⁴ I _9/2 and ⁴ F _3/2 Stark states of the Nd³⁺ ion are calculated. The calculation results nearly coincide with the data from the literature for the Y₂O₃:Nd³⁺ single crystal and transparent ceramics. Samples containing the compacting additive show additional lines, whose intensities correlate with its concentration and the method of preparation of Y₂O₃:Nd³⁺ ultradispersed powders. It is assumed that these lines are related to the fact that either Nd³⁺ ions enter the composition of the HfO₂ compacting additive or Hf⁴⁺ ions are present in the nearest environment of Nd³⁺ ions at the boundaries of granules enriched with HfO₂.     

Deposition and stoichiometry control of Nd-doped gadolinium gallium garnet thin films by combinatorial pulsed laser deposition using two targets of Nd:Gd<Subscript>3</Subscript>Ga<Subscript>5</Subscript>O<Subscript>12</Subscript> and Ga<Subscript>2</Subscript>O<Subscript>3</Subscript>

We have demonstrated pulsed laser deposition of Nd-doped gadolinium gallium garnet on Y₃Al₅O₁₂ by the simultaneous ablation of two separate targets of Nd:Gd₃Ga₅O₁₂ (GGG) and Ga₂O₃. Such an approach is of interest as a method of achieving stoichiometry control over films whilst the growth parameters are kept constant and optimal for high quality crystal growth. We show here how the stoichiometry and resultant lattice parameter of a film can be controlled by changing the relative deposition rates from the two targets. Films have been grown with enough extra Ga to compensate for the deficiency that commonly occurs when depositing only from a GGG target. We have also grown crystalline GGG films with an enriched Ga concentration, and this unconventional approach to film stoichiometry control may have potential applications in the fabrication of films with advanced compositionally graded structures.     

Spectroscopic properties of Nd<Superscript>3+</Superscript>:CaNb<Subscript>2</Subscript>O<Subscript>6</Subscript> crystal

The absorption spectra, fluorescence spectrum and fluorescence decay curve of Nd³⁺ ions in CaNb₂O₆ crystal were measured at room temperature. The peak absorption cross section was calculated to be 6.202×10⁻²⁰ cm² with a broad FWHM of 7 nm at 808 nm for E//a light polarization. The spectroscopic parameters of Nd³⁺ ions in CaNb₂O₆ crystal have been investigated based on Judd-Ofelt theory. The parameters of the line strengths Ω _t are Ω ₂=5.321×10⁻²⁰ cm²,Ω ₄=1.734×10⁻²⁰ cm²,Ω ₆=2.889×10⁻²⁰ cm². The radiative lifetime, the fluorescence lifetime and the quantum efficiency are 167 μs, 152 μs and 91%, respectively. The fluorescence branch ratios are calculated to be β ₁=36.03%,β ₂=52.29%,β ₃=11.15%,β ₄=0.533%. The emission cross section at 1062 nm is 9.87×10⁻²⁰ cm².     

Electromechanical properties of Pb<Subscript>3</Subscript>Ga<Subscript>2</Subscript>Ge<Subscript>4</Subscript>O<Subscript>14</Subscript> piezoelectric crystals grown from solution in a melt

Single crystals of lead gallium germanate Pb₃Ga₂Ge₄O₁₄ are grown from their own solution melts. The propagation of bulk acoustic waves is investigated, and the elastic, piezoelectric, and dielectric constants are calculated. The temperature dependences of the dielectric constants of this compound are analyzed.     

Luminescence thermometry using Gd<Subscript>2</Subscript>Zr<Subscript>2</Subscript>O<Subscript>7</Subscript>:Eu<Superscript>3+</Superscript>

In this paper we study the possibility of using the synthesized nanopowder samples of Gd₂Zr₂O₇:Eu³⁺ for temperature measurements by analyzing the temperature effects on its photoluminescence. The nanopowder was prepared by solution combustion synthesis method. The photoluminescence spectra used for analysis of Gd₂Zr₂O₇:Eu³⁺ nano phosphor optical emission temperature dependence were acquired using continuous laser diode excitation at 405 nm. The temperature dependencies of line emission intensities of transitions from ⁵D₀ and ⁵D₁ energy levels to the ground state were analyzed. Based on this analysis we use the two lines intensity ratio method for temperature sensing. Our results show that the synthesized material can be efficiently used as thermographic phosphor up to 650 K.     

EPR of Gd<Superscript>3+</Superscript> ion in mixed CeO<Subscript>2</Subscript>-Y<Subscript>2</Subscript>O<Subscript>3</Subscript> nanocrystals

This paper reports on the results of EPR studies of mixed CeO₂-Y₂O₃ crystals (including nanosized crystals) doped by gadolinium ions. It is revealed that the width of the line corresponding to the allowed transition 1/2 ↔ −1/2 between the Kramers-conjugated states |±1/2〉 of the Gd³⁺ ion decreases with a decrease in the powder size from macrosizes to nanosizes. The observed dependence can be due to the increase in the unit cell size during grinding of the samples.     

Morphology-dependent luminescence behavior of Y<Subscript>2-x</Subscript>Gd<Subscript>x</Subscript>O<Subscript>3</Subscript>:Eu<Superscript>3+</Superscript> thin-film phosphors grown by a laser ablation

Y_2-xGd_xO₃:Eu³⁺ luminescent thin films have been grown on Al₂O₃(0001) substrates using pulsed laser deposition. Films grown under different deposition conditions have been characterized using microstructural and luminescence measurements. The crystallinity, surface morphology and photoluminescence (PL) of the films are highly dependent on the amount of Gd present. The photoluminescence (PL) brightness data obtained from Y_2-xGd_xO₃:Eu³⁺ films grown under optimized conditions have indicated that Al₂O₃(0001) is one of the most promising substrates for the growth of high-quality Y_2-xGd_xO₃:Eu³⁺ thin-film red phosphors. In particular, the incorporation of Gd into the Y₂O₃ lattice could induce a remarkable increase of PL. The highest emission intensity was observed with Y_1.35Gd_0.60Eu_0.05O₃, whose brightness was increased by a factor of 3.1 in comparison with that of Y₂O₃:Eu³⁺ films. This phosphor may be promising for application in flat-panel displays. PACS 78.20.-e; 78.55.-m; 78.66.-w     

The influence of the specific surface of grains on the luminescence properties of Nd<Superscript>3+</Superscript>-doped Y<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript> nanopowders

Nd³⁺:Y₃Al₅O₁₂ (Nd:YAG) powders were prepared by the Pechini method in the temperature range of 800 to 1400 °C. The pure garnet phase of the obtained materials was confirmed by XRD studies. The size of the grains was controlled by the annealing temperature of the samples. Their morphologies were investigated by TEM and porosity measurements (BET). The effect of annealing temperature on the morphology and luminescence properties of Nd:YAG nanocrystallites was studied, and the results were compared to the properties of a Nd:YAG single crystal. A significant enhancement of the ⁴F_3/2→⁴I_9/2/⁴F_3/2→⁴I_11/2 intensity ratio with decreasing grain size was observed. It was found that the decay times of the Nd³⁺ luminescence depends on the specific surface and is significantly longer for well crystallized nanocrystalline grains than for single crystals having the same concentration of Nd³⁺ ions. The role of crystallinity and specific surface on the radiative processes is analyzed. PACS 78.55.-m; 78.20.Ci; 78.67.Bf; 78.68.+m     

Quantum cutting in Gd<Subscript>2</Subscript>SiO<Subscript>5</Subscript>: Eu<Superscript>3+</Superscript> by VUV excitation

The emission and excitation spectra of Gd₂SiO₅∶Eu³⁺ were investigated using the VUV beam line of the Beijing Synchrotron Radiation Facility (BSRF). The experimental results were discussed in the frame of visible quantum cutting process involved in Gd³⁺−Eu³⁺ system. Upon direct excitation into the⁶G _J states of Gd³⁺, two visible photon emissions from Eu³⁺ were observed. Cursory evaluation proved that Gd₂SiO₅∶Eu³⁺ is an efficient visible quantum cutter.     

Stark structure and exchange splittings of Nd<Superscript>3+</Superscript> ion levels in chain nickelate Nd<Subscript>2</Subscript>BaNiO<Subscript>5</Subscript>

Diffuse transmittance spectra of polycrystalline samples of chain nickelate Nd₂BaNiO₅ were measured with high resolution (0.1 cm^-1) over wide ranges of wavenumbers (1500–20000 cm^-1) and temperatures (4.2–300 K). The energies of 54 Stark sublevels of the Nd³⁺ ion and exchange splittings of some of them were determined in the magnetically ordered state of Nd₂BaNiO₅ (T _N = 47.5 ± 1 K). It was shown that the low-temperature magnetic properties of Nd₂BaNiO₅ are determined by exchange splitting (32 cm^-1) of the ground state.     

Microstructural and Radioluminescence Characteristics of Nd<Superscript>3+</Superscript> Doped Columbite-Type SrNb<Subscript>2</Subscript>O<Subscript>6</Subscript> Phosphor

Undoped and different concentration Nd³⁺ doped SrNb₂O₆ powders with columbite structure were synthesized by molten salt process using a mixture of strontium nitrate and niobium (V) oxide and NaCl-KCl salt mixture as a flux under relatively low calcining temperature. X-ray diffraction analysis results indicated that SrNb₂O₆ phases found to be orthorhombic columbite single phase for undoped, 0.5 and 3 mol% Nd³⁺ doping concentrations. Phase composition of the powders was examined by SEM-EDS analyses. Radioluminescence properties of Nd³⁺ doped samples from UV to near-IR spectral region were studied. The emissions increased with the doping concentration of up to 3 mol%, and then decreased due to concentration quenching effect. There is a sharp emission peak around 880 nm associated with ⁴F_5/2 → ⁴I_9/2 transition in the Nd³⁺ ion between 300 and 1100 nm. The broad emission band intensity was observed from 400 to 650 nm where the peak intensities increased by increasing Nd³⁺ doping concentration. All the measurements were taken under the room temperature.     

Spectral properties of a Nd<Superscript>3+</Superscript>-doped Li<Subscript>3</Subscript>Ba<Subscript>2</Subscript>Gd<Subscript>3</Subscript>(MoO<Subscript>4</Subscript>)<Subscript>8</Subscript> crystal

The spectral properties of a promising laser material, ternary molybdate Li₃Ba₂Gd₃(MoO₄)₈:Nd³⁺, are studied (i.e., its optical absorption spectra, luminescence spectra, kinetic of luminescence decay, and temperature dependence of luminescence). Luminescence of the crystalline matrix is detected, and the temperature dependence of its intensity and reabsorption by neodymium are investigated.     

Luminescence of Eu<Superscript>3+</Superscript> rare-earth ions in Lu<Subscript>2</Subscript>O<Subscript>3</Subscript> nanospheres

The kinetics of luminescence of Eu³⁺ ions in Lu₂O₃:Eu nanospheres with diameters of 100–270 nm and a small standard deviation of the size distribution <15% has been studied. A sharp decrease in the decay time of luminescence of Eu³⁺ ions in the red range with an increase in the diameter of nanospheres has been attributed to the appearance of a photon mode accelerating spontaneous luminescence, which is confirmed by the calculation of ranges of existence of whispering-gallery modes in studied nanospheres.     

A high efficient antireflective down-conversion Y<Subscript>2</Subscript>O<Subscript>3</Subscript>:Bi<Superscript>3+</Superscript>, Yb<Superscript>3+</Superscript> thin films

The high efficient antireflective down-conversion Y₂O₃:Bi, Yb films have been prepared successfully on Si(100) substrates by pulsed laser deposition (PLD) method, Upon excitation of ultraviolet photon varying from 300 to 400 nm, near-infrared emission of Yb³⁺ was observed for the film, can be efficiently absorbed by silicon (Si) solar cell. Most interestingly, there is a very low average reflectivity 1.46% for the incident light from 300 to 1100 nm. To the best of our knowledge, this is the lowest reflectance for the down-conversion thin films prepared by cost efficient method. The surface topography of the high efficient antireflective films can be controllably tuned through the substrate template regulation by optimizing process parameters. Besides, the results showed that there is a close relationship between luminescent property and morphology of the film. With the change of the surface morphology, the intensity of Bi³⁺ and Yb³⁺ emission peaks increase first and then decrease. The obtained results demonstrate that this film can enhance the Si solar cell efficiency through light trapping and spectrum shifting.     

Optical spectra and excited state relaxation dynamics of Sm<Superscript>3+</Superscript> in Gd<Subscript>2</Subscript>SiO<Subscript>5</Subscript> single crystal

Single crystals of gadolinium orthosilicate Gd₂SiO₅ containing 0.5 at% and 5 at% of Sm³⁺ were grown by the Czochralski method. Optical absorption spectra, luminescence spectra and luminescence decay curves were recorded for these systems at 10 K and at room temperature. Comparison of optical spectra recorded in polarized light revealed that the anisotropy of this optically biaxial host affects the intensity distribution within absorption and emission bands related to transitions between multiplets rather than the overall band intensity. It has been found that among four bands of luminescence related to the ⁴G_5/2→⁶H_J (J=5/2–11/2) transitions of Sm³⁺ in the visible and near infrared region the ⁴G_5/2 →⁶H_7/2 one has the highest intensity with a peak emission cross section of 3.54×10⁻²¹ cm² at 601 nm for light polarized parallel to the crystallographic axis c of the crystal. The luminescence decay curve recorded for Gd₂SiO₅:0.5 at% Sm³⁺ follows a single exponential time dependence with a lifetime 1.74 ms, in good agreement with the ⁴G_5/2 radiative lifetime τ _rad=1.78 ms calculated in the framework of Judd-Ofelt theory. Considerably faster and non-exponential luminescence decay recorded for Gd₂SiO₅:5 at% Sm³⁺ sample was fitted to that predicted by the Inokuti-Hirayama theory yielding the microparameter of Sm³⁺–Sm³⁺ energy transfer C _da=1.264×10⁻⁵² cm⁶×s⁻¹.