Synthesis and crystal growth of sillenite phases in the Bi2O3 ‐ TiO2 ‐ Nb2O5 system

The synthesis of Bi₂O₃‐Nb₂O₅ sillenite phase (BNbO) and the solubility of this phase with Bi₁₂TiO₂₀ was investigated by solid‐state reaction synthesis and niobium doped Bi₁₂TiO₂₀ (BTO:Nb) crystals were grown by the Top Seeded Solution Growth (TSSG) technique. The structures of polycrystalline compounds were checked by X‐ray powder diffraction method at room temperature. The correct composition of the sillenite phase stabilized with niobium was determined as Bi₁₂[Nb_0.17Bi_0.83]O_19.7 (BNbO) with unit cell parameter a = 10.261(2) Å. The system BTO‐BNbO is poorly soluble, but niobium doped BTO crystals were grown from the liquid composition 10Bi₂O₃ : xTiO₂ : (1‐x)/2 Nb₂O₅, with x = 0.95 and 0.90. A niobium concentration limit in the liquid phase is established in order to grow BTO:Nb with good crystalline quality. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystallization features of YBa2Cu3O7‐δ in the Y2BaCuO5‐BaCuO2‐CuO and Y2Cu2O5‐BaCuO2 systems

Based on the data of X‐ray phase and microstructure analysis, the sample composition was optimized in order to provide maximum size of the textured macrograins of YBa₂Cu₃O_7‐δ and of the crystallites in the Y₂BaCuO₅‐BaCuO₂‐CuO, Y₂Cu₂O₅‐BaCuO₂ systems. The growth rate has been studied and the YBa₂Cu₃O_7‐δ growth activation energy has been calculated for the samples of Y₂BaCuO₅+3BaCuO₂+2.3CuO, Y₂BaCuO₅+3BaCuO₂+0.6CuO, and Y₂Cu₂O₅+3.5BaCuO₂ compounds in the temperature range of 1240‐1270K for the case of use of the Y₂Cu₂O₅ and Y₂BaCuO₅ precursors with an average grain diameter of 10 μm and 1mm. A crystallization mechanism of YBa₂Cu₃O_7‐δ in the Y₂BaCuO₅‐BaCuO₂‐CuO and Y₂Cu₂O₅‐BaCuO₂ systems in the case of different sizes of Y₂BaCuO₅ and Y₂Cu₂O₅ precursor grains was proposed and validated. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Resistance and inductance studies of Bi2−xPbxCa2Sr2Cu3Oy superconducting compounds

Bi_2−xPb_xCa₂Sr₂Cu₃O_y compounds with (x = 0, 0.1, 0.2, 0.25, 0.3 and 0.4) were prepared by solid state reaction. The resistance and inductance results showed that transition temperature increases with increase in lead concentration. The highest value of T_c(0) observed is 109 K for Bi_1.70Pb_0.30Ca₂Sr₂ · Cu₃O_y. The change of inductance per unit volume at liquid nitrogen temperature as a function of composition showed maximum change in x = 0.30 Pb-doped sample. The results showed that the inductance change is maximum in samples which also showed highest T_c.     

Thermal and optical properties of glasses of the system Bi2O3 – B2O3

In the binary system Bi₂O₃ – B₂O₃ glasses were prepared in the composition range 57.5 mol% ‐ 80 mol% B₂O₃ by defined slow cooling of large melt samples (about 75 cm³, each). Temperatures of crystallization, of melting and of glass transition were determined and density data of the glasses were derived using the hydrostatic weighting method. Thermal expansion coefficients and high precision refractive indices, together with their dispersion, were measured. The measured physical properties indicate subtle discontinuous structural changes of the glasses with glass composition, that match with the ranges of existence of the crystalline compounds of the binary system Bi₂O₃ – B₂O₃. Thermal investigations together with X‐ray powder diffraction analyses of crystallized glass samples prove the so far doubtful existence of a borate compound named “BiBO₃” in the PDF within the composition range 52.5 – 57.5 mol% B₂O₃.     

Quantitative analysis of Bi1−xSbx

The chemical composition of Bi_1-xSb_x alloys is determined by means of square-wave polarography, density measurements, measurements of the electron backscatter coefficient, and electron probe microanalysis. These experimental methods are discussed with respect to their results. At 10 keV, the electron probe microanalysis allows the determination of any antimony concentration without corrections (c_Sb = k_Sb).     

Controllable thermal expansion properties of In2 − xCrxMo3O12

Solid solutions In_{2 − x}Cr_xMo₃O₁₂ have been prepared via the solid state reaction method. The structural and thermal expansion properties have been characterized using X‐ray diffraction. All compounds exhibit monoclinic structure with space group P2₁/a at room temperature, and transform to orthorhombic structure at higher temperature. Compounds In_{2 − x}Cr_xMo₃O₁₂ (x = 0.7, 1.0 and 1.3) possess strong positive thermal expansion in the monoclinic structure, while their thermal expansion coefficients of orthorhombic structure vary from negative to positive with increasing Cr content. It is worthwhile to note that In_1.3Cr_0.7Mo₃O₁₂ and InCrMo₃O₁₂ have near zero thermal expansion properties.     

Growth of defect-free Sr1−xBaxNb2O6 (SBN) crystals

SBN single crystals are grown by the Czochralski technique. Growth defects (striations, dislocations, twin lamellae) are investigated as depending on growth conditions. Crystals almost free from growth defects and applicable to optical devices are prepared by an optimized growth technology.     

Growth,structure, and superconducting properties of Bi2Sr2Ca2Cu3O10 and (Bi,Pb)2Sr2Ca2Cu3O10‐y crystals

Large and high‐quality single crystals of both Pb‐free and Pb‐doped high temperature superconducting compounds (Bi_1‐xPb_x)₂Sr₂Ca₂Cu₃O_10‐y (x = 0 and 0.3) were grown by means of a newly developed “Vapour‐Assisted Travelling Floating Zone” technique (VA‐TSFZ). This modified zone‐melting technique was realised in an image furnace and allowed for the first time to grow Pb‐doped crystals by compensating for the Pb losses occurring at high temperature. Crystals up to 3×2×0.1 mm³ were successfully grown. Post‐annealing under high pressure of O₂ (up to 10 MPa at T = 500°C) was undertaken to enhance T_c and improve the homogeneity of the crystals. Structural characterisation was performed by single‐crystal X‐ray diffraction (XRD) and the structure of the 3‐layer Bi‐based superconducting compound was refined for the first time. Structure refinement showed an incommensurate superlattice in the Pb‐free crystals. The space group is orthorhombic, A2aa, with cell parameters a = 27.105(4) Å, b = 5.4133(6) Å and c = 37.009(7) Å. Superconducting studies were carried out by A.C. and D.C. magnetic measurements. Very sharp superconducting transitions were obtained in both kinds of crystals (ΔT_c ≤ 1 K). In optimally doped Pb‐free crystals, critical temperatures up to 111 K were measured. Magnetic critical current densities of 2�10⁵ A/cm² were measured at T = 30 K and μ₀H = 0 T. A weak second peak in the magnetisation loops was observed in the temperature range 40‐50 K above which the vortex lattice becomes entangled. We have measured a portion of the irreversibility line (0.1‐5 Tesla) and fitted the expression for the melting of a vortex glass in a 2D fluctuation regime to the experimental data. Measurements of the lower critical field allowed to obtain the dependence of the penetration depth on temperature: the linear dependence of λ(T) for T < 30 K is consistent with d‐wave superconductivity in Bi‐2223. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and Spectrometric Tests on Bi4Ge3O12 Crystals

A resistance-heated furnace with a good control of temperature gradients is used for the Czochralski growth of precipitate and colour free Bi₄Ge₃O₁₂ (BGO) crystals up to 30 mm in diameter and 80 mm in length from a 45 mm diameter crucible. The quality of the grown crystals is discussed in connection with the growth conditions. Spectrometric tests made on scintillators obtained from BGO crystals are presented. A Monte Carlo program is used in order to compute the full energy peak efficiency of the detector for different energies and geometries. The computed values are compared to the experimental results.     

Phase equilibria in BaB2O4–LiF system and β–BaB2O4 bulk crystals growth

Solid state synthesis, differencial thermal analysis and visual polythermal analysis were applied to study the phase equilibria in BaB₂O₄–LiF system. A phase diagram BaB₂O₄–LiF has been plotted for the first time. The system has proved applicable for growing β–BaB₂O₄ bulk crystals.     

Single crystal preparation of MnxCr3–xO4 by flux method

Mn_xCr_{3 x}O₄ was prepared by the flux method. Melts of PbO PbF₂, Bi₂O₃ B₂O₃, B₂O₃, Na₂B₄O₇, and Na₂W₂O₇ Na₂WO₄ were used. The best results could be yielded with the PbO PbF₂ flux, from which crystals with 2–4 mm in thickness were grown. The Bi₂O₃ B₂O₃ flux produced crystals with 1–2 mm in thickness. The spinell structure of the chromite was proved by X-ray investigation.     

Bi4Si3O12晶体的水热法生长研究

采用水热法,以固相烧结的化学计量比(2Bi2 O3∶3SiO2)的玻璃态Bi4Si3O12做培养料,以NaOH溶液为矿化剂,研究了在水热体系下形成Bi4Si3O12晶体的相区.结果发现,在生长温度为380 ～ 500℃,矿化剂浓度为1.5 ～4 mol/L时,自发成核生成的晶粒均为Bi4Si3O12和Bi12SiO20两种物相.通过在矿化剂溶液中外加一定量的SiO2,得到完全纯相的Bi4Si3O12,并生长出尺寸超过8 mm的Bi4Si3O12单晶.无论在矿化剂溶液中是否添加SiO2,生长的Bi4Si3O12都呈四面体形状,显露面以{112}面族为主,Bi4Si3O12晶体的这一结晶习性能够用周期性键链(PBC)理论予以解释.     

Evolution of nanocrystalline BaBi2Nb2O9 in Li2B4O7–BaO–Bi2O3–Nb2O5 glass system

Transparent glasses and glass nano crystal composites (GNCs) of various compositions in the system (100 − x)Li₂B₄O₇–x(BaO–Bi₂O₃–Nb₂O₅) (where x = 10, 20, and 30 in molar ratio) were fabricated via splat-quenching technique. The glassy nature of the as-quenched samples was established by differential thermal analyses. X-ray powder diffraction and transmission electron microscopic (TEM) studies confirmed the formation of layered perovskite BBN via a fluorite like phase. TEM studies revealed the presence of 10 nm sized spherical crystallites of fluorite like BaBi₂Nb₂O₉ phase in the glassy matrix of Li₂B₄O₇ (LBO). The influence of composition on the dielectric and the optical properties (transmission, optical band gap) of these samples has been investigated.     

Effect of the Temperature Fluctuation of the Melt on β‐BaB2O4 (BBO) Crystal Growth

In this paper the effect of the growth temperature fluctuation, for instance, the transient furnace temperature variation due to a short‐term electric power supply interruption on BBO crystal growth was investigated based on the theory of temperature wave transmitting in melt and the boundary layer theory of melt. It was found that the critical width of the temperature pulse to avoid the temperature wave penetrating through the boundary layer and reaching to the growth interface at a constant rotation speed (9∼4 r/min) is 69∼150 s and the corresponding amplitude of the temperature pulse is high more than 60 °C due to the large thickness of the velocity boundary layer of the melt. This result indicates that a small transient temperature fluctuation has no significant effect on the crystal quality, and therefore implies that not only transport processes but interface growth kinetics, a two‐dimensional nucleation growth mode at the interface may also dominate the crystal growth.     

Various Growth Shapes of Na2S2O3 5H2O Crystals

The relation between the growth shapes and supersaturations and/or supercoolings was investigated in the Na₂S₂O₃ 5H₂O crystals: (i) The growth shapes changed from a hexagonal prismatic crystal, aggregate of platy crystals and to a spherulite with an increase of supersaturations and/or supercooloings. (ii) The deposition rate suddenly increased at a certain supersaturation and/or supercooling, where the growth shape changed from the hexagonal prism to the aggregate of platy crystals. (iii) The deposition rates of spherulites become higher with increasing the solute concentrations. (iv) The formation process of the spherulites were in situ observed by the Schlieren and/or Mach‐zehnder interferometer methods.     

Vertical Bridgman Growth and Scintillation Properties of Doped Bi4Si3O12 Crystals

Pure BSO and Ce, Nd, Eu, Cr and Fe doped BSO crystals of high optical quality with 20x20x100mm³ have been grown by the vertical Bridgman method. After measuring their transmission spectra, light outputs, FWHM energy resolutions and excitation-emission spectra, we summarized and explained the laws of doped effects on the scintillation characteristics. we can expect that Eu may be the most promising dopant candidate of the doped elements for improving the scintillation characteristics of BSO crystal.