Struktur von AIIBVI-Epitaxieschichten in Abhängigkeit von den Aufdampfbedingungen

The structure of epitaxial films of A^IIB^VI-compounds is discussed. Especially the results of investigations concerning the epitaxy of CdSe on cleavage planes of NaCl and CaF₂ using high-vacuum evaporation are treated. Epitaxial films of A^IIB^VI-compounds usually show defect structures due to the co-existence of the zincblende and wurtzite structures, oriented overgrowth of these two phases, twinning and stacking faults. The resulting complex diffraction patterns (for electron diffraction in transmission) are discussed. The nature of the substrate, substrate temperature, and deposition rate besides experimental factors decisively influence the orientation, structure, and phase composition of the films. An influence of deviations from the stoichiometric composition has to be taken into account.     

Bestimmung der relativen Stabilität der Zinkblende- und Wurtzitstruktur mit Hilfe des piezoelektrischen Effektes

A phenomenological model of the piezoelectric effect is used to determine the relative stability of zineblende and wurtzite structure in A_II B_VI-semiconductors. It is shown that compounds with a normalized longitudinal piezoelectric constant e_pol* > 0,15 ± 0,02 are stable in wurtzite but compounds with e*_pol < 0,15 ± 0,02 are stable in zineblende structure.     

X-ray Studies on the Liquid Crystalline Phases of the 4-[4-n-Heptyloxy-Benzylidene-Amino]4'-cyanobiphenyl

By means of X-ray diffraction studies of oriented and non-oriented samples the lattice parameters of the orthorhombic cell of the S_E phase as well as of the hexagonal cell of the S_B phase were determined. By packing considerations a bimolecular building unit with oppositely arranged cyano-groups was assumed in the case of the S_E phase. The S_B phase is characterized by an ABAB sequence of the smectic layers in which the molecules are hexagonal arranged. The increasing mobility of the molecules at increasing temperature offers the possibility for a part of the molecules to slide in a more stable dimerized form. In the N_R and S_A phase the existence of monomers as well as of dimers is assumed. In this way a conception of the phase transitions S_E → S_B → N_R → S_A is given on the base of a decrease by steps of the dipole-dipole repulsion.     

Lattice Vibrations and Interatomic Forces in AIIB2IIIC4VI Defect-Chalcopyrite Compounds (I) Keating Model Considerations

The lattice vibrations of the A^IIB^III₂C^VI₄ semiconductors with defect-chalcopyrite structure are treated in a simplified version of the Keating model considering only interaction with nearest neighbours and assuming that all anions occupy their ideal lattice sites. It is found that in this model the frequencies of the nonpolar and polar modes with highest energy are determined by the properties of the B^III–C^VI sublattice alone. The frequencies of all the other optical modes depend not only on the A^II–C^VI and B^III–C^VI interactions but are also influenced by the presence of the ordered array of vacancies. The results obtained are compared with previous model considerations.     

Calculations of homogeneous region in Ga1−xAlxAs and GaAs1−xPx ternary solid solutions

Ternary solid solutions of A^IIIB^V compounds are considered as pseudobinary A(x)^IIIB(x)^v compounds, where the behaviour of A(x)^III and B(x)^v pseudoatoms is quite similar to A^III and B^v atoms in a binary A^IIIB^v crystal. Weak dependence of point defect contribution into Gibb's energy of A^IIIB^v crystal on its defect nature, random character of ternary solid solutions of A^IIIB^v compounds allow to use already for binary compounds developed formalism in the determination of component thermodynamic potentials of solid solution. Basing on literature data for the equilibrium solidus of AlAs the approximation for the temperature dependence of thermodynamic potential of an AB quasimolecule in A^IIIB^v crystal is revised. This result together with the well-known parameters for the equilibrium liquidus in Ga–P, Ga–As, and Al–As systems were used for calculations of the nonstoichiometric factor at the boundary of a homogeneous region in Ga_1−xAl_xAs and GaAs_1−xP_x ternary solid solutions. The results are compared with the known literature data.     

Interatomic force constants in AIIBIVCV2 chalcopyrite compounds

Force constants of the A^II C^V and B^IV C^V bonds in the A^IIB^IVC^V₂ compounds with chalcopyrite structure are estimated from experimental lattice vibration data using a simplified version of the Keating model. It is shown that the force constants depend exponentially on the bond length. The parameters of this relation are practically the same as those found for the A^IV A^IV, A^III B^V and A^II B^VI bonds in the elemental semiconductors and binary compounds and for the B^III C^VI bond in the A^IB^IIIC^VI₂ semiconductors.     

Structure and features of the surface morphology of <Emphasis Type="Italic">A</Emphasis><Superscript>4</Superscript><Emphasis Type="Italic">B</Emphasis><Superscript>6</Superscript> chalcogenide epitaxial films

The structure and features of the surface morphology of Pb_{1 − x} Mn _x Se (x = 0.03) epitaxial films grown on freshly cleaved BaF₂(111) faces and PbSe_{1 − x} S _x (100) (x = 0.12) single-crystal wafers were investigated by molecular beam condensation and the hot-wall method. It is shown that the epitaxial films, in accordance with the data in the literature for other chalcogenides, grow in the (111) and (100) planes, repeating the substrate orientation. Black aggregates are observed on the film surface of the films grown. The results obtained are compared with the data in the literature and generalized for other chalcogenides: A ⁴ B ⁶:Pb (S, Se, Te); Pb_{1 − x} Sn _x (S, Se, Te); and Pb_{1 − x} Mn (Se, Te). It is established that the formation of black aggregates, which are second-phase inclusions on the surface of epitaxial films obtained by vacuum thermal deposition, is characteristic of narrow-gap A ⁴ B ⁶ chalcogenides.     

Structure and Packing in Smectic E and Smectic A Phases in the Series of 4-n-Alkyloxy-4′-alkanoylbiphenyls

By means of X-ray investigations the structure of the S_E and S_A-phases of the title compounds has been studied. The lattice parameters of the orthorhombic S_E structure are given. The thickness of the smectic layers is nearly the same in the S_E and S_A phases and agrees well with the length of the molecules in their most stretched form. That suggests a similar conformation of the alkyl chains in both phases. A model of the packing in the S_A phase is discussed which is based on a dense packing with antiparallel orientation of molecules with a non-symmetrical shape.     

Über die röntgenographische Analyse der mittleren quadratischen Atomverschiebungen in einigen Halbleiterkristallen

X-ray measurements of the Debye-Waller factor were performed with single crystals of Ge and of semiconducting compounds A^IIIB^V, A^IIB^VI, A^IVB^VI in the temperature range 100 K — 1000 K. From the results the mean square atomic displacements 〈u²〉 and the Debye characteristic temperatures θ of the materials were calculated. Both parameters are discussed with respect to the influence of the temperature, the influence of point defects and, in the case of the compounds, deviations from the stoichiometric composition on the thermal lattice vibrations. Finally, considerations are presented, concerning the relationship between the parameters 〈u²〉 and θ_M, respectively, and the activation energies of vacancy formation and diffusion in the materials.     

Single crystal preparation of MnxCr3–xO4 by flux method

Mn_xCr_{3 x}O₄ was prepared by the flux method. Melts of PbO PbF₂, Bi₂O₃ B₂O₃, B₂O₃, Na₂B₄O₇, and Na₂W₂O₇ Na₂WO₄ were used. The best results could be yielded with the PbO PbF₂ flux, from which crystals with 2–4 mm in thickness were grown. The Bi₂O₃ B₂O₃ flux produced crystals with 1–2 mm in thickness. The spinell structure of the chromite was proved by X-ray investigation.     

Infrared and Raman Spectra of ZnIn2Se4

Infrared reflectivity and Raman spectra of polycrystalline ZnIn₂Se₄ revealed a total number of seven structures due to optical vibrational modes. Based on a comparison with previous measurements on other A^IIB₂^IIIC₄^VI compounds a symmetry assignment of the modes is proposed.     

Phase transitions in compounds with the Ca<Subscript>3</Subscript>Ga<Subscript>2</Subscript>Ge<Subscript>4</Subscript>O<Subscript>14</Subscript> structure

Possible structural changes described by the group-subgroup relationships in the Ca₃Ga₂Ge₄O₁₄-type structure (sp. gr. P321) are considered. The most probable phase transitions seem to be those accompanied by lowering of the symmetry to the maximal non-isomorphic subgroups P3 and C2. It is shown that only destructive phase transitions accompanied by symmetry rise up to the minimal non-isomorphic supergroups for the given structure type can take place. The change of the trigonal symmetry to monoclinic is revealed in La₃SbZn₃Ge₂O₁₄, whose crystal structure is refined as a derivative structure of the Ca₃Ga₂Ge₄O₁₄ structure type within the sp. gr. A2 (C2). At ～250°C, La₃SbZn₃Ge₂O₁₄ undergoes a reversible phase transition accompanied by symmetry rise, A2 ? P321. Similar phase transitions, P321 ? A2, are also observed in La₃Nb_0.5Ga_5.5O₁₄ and La₃Ta_0.5Ga_5.5O₁₄ under the hydrostatic pressures 12.4(3) and 11.7(3) GPa, respectively. The mechanisms of compression and phase transition are based on the anisotropic compressibility of a layer structure. With the attainment of the critical stress level in the structure, the elevated compressibility in the (ab) plane gives rise to a phase transition accompanied by the loss of the threefold axis. Attempts to reveal low-temperature phase transitions in a number of representatives of the langasite family have failed.     

Synthesis and Crystal Structures of Two Polymorphs of Trilanthanum Iridium Septaoxide (La<Subscript>3</Subscript>IrO<Subscript>7</Subscript>)

Abstract  

Two polymorphs of trilanthanum iridium septaoxide, La₃IrO₇, were prepared as single crystals using a molten cesium hydroxide flux and were structurally characterized using single-crystal X-ray diffraction. Polymorph A crystallizes in the orthorhombic space group Cmcm with unit cell dimensions of a = 11.2103(3) ?, b = 7.4982(2) ?, and c = 7.6110(2) ?. Polymorph B crystallizes into the monoclinic space group P2₁/n with the unit cell dimensions of a = 8.8512(5) ?, b = 5.7167(3) ?, c = 24.4454(13) ?, and β = 95.542(2)°. The crystal structure of polymorph A is isostructural to the family of compounds with formula Ln₃MO₇ (M = Nb⁵⁺, Mo⁵⁺, Ru⁵⁺, Ta⁵⁺, Re⁵⁺, Os⁵⁺, and Ir⁵⁺) while the crystal structure of polymorph B has no known corollaries.     

The Preparation and Crystal Structure of MgP4

In the systematical study of the A¹¹B^V semiconducting compounds the Mg-P system has been examined. Among the products of crystallization from Bi Pb Sn alloy the crystals of a new compound MgP₄ have been identified. It has been found that these crystals are isostructural with CdP₄. The crystal structure refinement from X-ray data has been performed. The lattice constants are: a = 5.141 Å, b = 5.079 Å, c = 7.518 Å, β = 98.64°; Z = 2; space group P2₁/c.     

Zur Heteroepitaxie von AIBIIIC2VI-Verbindungen – Interpretation von RHEED-Diagrammen

Semiconductors of the A^IB^IIIC₂^VI type, crystallizing in the chalcopyrite structure, grow epitaxially with their {112}-planes on monocrystalline substrates with a three-fold symmetry of faces. It is shown that application of the RHEED technique permits definitively to decide what kind of epitaxial overgrowth takes place, supposing the atomic scattering factors of the I and III atoms are sufficiently different and/or the c/a axis ratio differs markedly from 2. CuInSe₂/GaAs and CuGaSe₂/GaAs show one-dimensional epitaxy     

Thermal “order‐disorder” behaviour in (Na1‐xKx)4B8O14 solid solutions investigated by X‐ray powder diffraction

In the potassium‐rich part of the binary system Na₄B₈O₁₄‐K₄B₈O₁₄ solid solutions have been found that can be described with the formula (Na_1‐xK_x)₄B₈O₁₄ with 0.45 ≤ x < 1.0. The crystal structures of (Na_0.25K_0.75)₄B₈O₁₄ and (Na_0.45K_0.55)₄B₈O₁₄ were refined at room temperature by the Rietveld method. The solid solutions crystallize like K₄B₈O₁₄ in the triclinic crystal system, space group P ‐1, with K partially substituted for Na. An ordered distribution of the alkali atoms over the four cation sites at room temperature has been discovered. The structure of (Na_0.25K_0.75)₄B₈O₁₄ was also refined for data collected at 300 and 500 °C. The refinements show that sodium and potassium atoms are less ordered at higher temperatures. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Calculation of thermodynamic parameters of melts from experimentally determined liquidus‐curves

Thermodynamic parameters of melts (ΔH_S, A₀, A₁) in the system Anorthite‐Diopside and Bi₂O₃‐Bi₄B₂O₉ have been calculated by a rigorous application of solution thermodynamics. The data are internally consistent and yield values of ΔH_S for Anorthite = 133 kJ/mole, Diopside = 81 kJ/mole, Bi₂O₃ = 19 kJ/mole and Bi₄B₂O₉ = 39 kJ/mole. The activity of Anorthite and Diopside in an anorhtitic melt deviates negative from ideality, whereas a diopsidic melt behaves almost ideal. In a “Bi₂O₃” melt the activity of the Bi₂O₃ component is strongly positive, that of Bi₄B₂O₉ is strongly negative. The opposite is observed for the “Bi₄B₂O₉” melt. All calculated liquidi except the Bi₄B₂O₉ liquidus closely match the experimental ones. In contrast to the experimental liquidus the calculated Bi₄B₂O₉ liquidus has an inflection point. The crest of the metastable spinode (solvus) for a “Bi₂O₃” melt is close to the liquidus indicating melt separation at undercooling. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal structure of the rhombohedral phase of Fe<Subscript>3</Subscript>B<Subscript>7</Subscript>O<Subscript>13</Subscript>Br

The crystal structure of the rhombohedral phase of Fe₃B₇O₁₃Br was determined and compared with the structures of Fe₃B₇O₁₃Cl and Fe₃B₇O₁₃I. The influence of the ionic radii of the halogen atom on the structural features of the crystals of the boracite family is discussed.     

Chemical Bond in AIIBV2 Systems from Magnetic Susceptibility Data

Some peculiarites of chemical bond in A^IIB^V₂ systems from the data on the magnetic susceptibility of the A^IIB^V₂ compounds and their solid solutions are discussed. With this aim in view the magnetic susceptibility has been divided into the Langevin diamagnetic and van Vleck paramagnetic terms. The diamagnetic susceptibility of valence electrons, affecting the chemical bond in a crystal against the covalency parameter along the A – B, A – A, B –B bonds in A^IIB^V₂ compounds, has been analysed. The covalency parameter of the A^IIB^V₂ compounds has been evaluated. Closeness of the covalency parameter values for monoclinic β-ZnP₂ and tetragonal CdP₂, CdAs₂, is evidently, one of the reasons for the solid solution formation between the above mentioned compounds.