Search for the decay K(L) --> pi(0)&mgr;(+)&mgr;(-)

We report on a search for the decay K(L)-->pi(0)&mgr;(+)&mgr;(-) carried out as a part of the KTeV experiment at Fermilab. This decay is expected to have a significant CP violating contribution and a direct measurement will either support the Cabibbo-Kobayashi-Maskawa mechanism for CP violation or point to new physics. Two events were observed in the 1997 data with an expected background of 0.87+/-0.15 events, and we set an upper limit B(K(L)-->pi(0)&mgr;(+)&mgr;(-))<3. 8x10(-10) at the 90% confidence level.     

On Young's (1805) equation and Finn's (2006) ‘counterexample’

In 1805, Thomas Young considered the balance of forces acting on the contact line formed at the intersection of a liquid-fluid interface with a solid surface and introduced a macroscopic concept of “contact angle”. From Young's reasoning it follows that in equilibrium the contact angle is a material property of the liquid/fluid/solid system independent of a particular configuration. Two centuries later, Robert Finn considered a model problem which seems to suggest that there is a fundamental flaw in Young's force diagram and the reasoning behind it. In the present note, we show that the apparent paradox in Finn's model problem disappears once Young's original concepts are applied in a correct way.     

Observation of B(0) --> D0pi(0) and B(0) -->D(*0)pi(0)

We have studied the color-suppressed hadronic decays of neutral B mesons into the final states D*0pi(0). Using 9.67 x 10(6) BB pairs collected with the CLEO detector, we observe the decays B( 0) --> D0pi(0) and B( 0) -->D(*0)pi(0) with the branching fractions BB( 0) -->D0pi(0)) = (2.74(+0.36)(-0.32) +/- 0.55)x10(-4) and BB( 0) -->D(*0)pi(0)) = (2.20(+0.59)(-0.52) +/- 0.79)x10(-4). The first error is statistical and the second systematic. The statistical significance of the D0pi(0) signal is 12.1sigma ( 5.9sigma for D(*0)pi(0)). Utilizing the B( 0) -->D*0)pi(0) branching fractions we determine the strong phases delta(I,D(*)) between isospin 1/2 and 3/2 amplitudes in the Dpi and D*pi final states to be cosdelta(I,D) = 0.89 +/-0.08 and cosdelta(I,D*) = 0.89 +/- 0.08, respectively.     

The Unified SU(2) × U(1) × U′(1)-models of Electroweak Interaction of Leptons

The possible variants of the unified models of electroweak interaction of leptons in the framework of the broken gauge SU(2) × U(1) × U′(1)-symmetry are constructed. In the first part analysis of SU(2) × U(1) × U′(1)-symmetry breaking by the different combinations of two types of Goldstone-Higgs fields: isodoublet φ and isosinglet Φ complex isovector ξ and Φ φ and ξ is considered. The second part is devoted to the construction of the feasible leptonic models in which the masses of the introduced leptons can be generated by symmetry breaking due to the fields considered in the first part. In the third part acceptability of these models from the point of view of available experimental data of cross-sections of muonic neutrino and antineutrino scattering on electron has been investigated.     

Metastable (1 × 2) and (1 × 3) reconstructions of Pd(110)

By adsorption and subsequent reduction of oxygen on Pd(110), metastable (1 × 2) and (1 × 3) reconstructed surfaces have been produced. Oxygen was not present after the reduction but a small amount of residual hydrogen (< 0.15 monolayers) remained. However this is not the origin of the reconstruction as adsorption of this amount of hydrogen on the clean surface did not cause reconstruction. The structures were stable up to ˜ 370 K, and at higher temperatures they reverted to (1 × 1). These results are compared with Rh(110) where similar reconstructions have been found.     

Search for nu(mu)-->nu(e) and nu(mu)-->nu(e) oscillations at NuTeV

Limits on nu(mu)-->nu(e) and nu(mu)-->nu(e) oscillations are extracted using the NuTeV detector with sign-selected nu(mu) and nu(mu) beams. In nu(mu) mode, for the case of sin(2)2alpha = 1, Delta(m)(2)>2.6 eV(2) is excluded, and for Delta(m)(2)>1000 eV(2), sin(2)2alpha>1.1 x 10(-3). The NuTeV data exclude the high Delta(m)(2) end of nu(mu)-->nu(e) oscillation parameters favored by the LSND experiment without the need to assume that the oscillation parameters for nu and nu are the same. We present the most stringent experimental limits for nu(mu)(nu(mu))-->nu(e)(nu(e)) oscillations in the large Delta(m)(2) region.     

The kinetics of the (5 × 20) → (1 × 1) structural transition for Au(100)

The kinetics of the anion-induced (5 × 20) → (1 × 1) surface structural transition of reconstructed Au(100) electrodes was studied in sulfate-containing solutions by current transients. It is shown that lifting of the reconstruction follows a nucleation-and-growth type behavior which can be described by the Avrami equation. Moreover, for high positive potentials, i.e., high anion coverages, the current-transient analysis reveals instantaneous nucleation, whereas for low transition overpotentials and long transition times a mechanism with constant transition rate prevails. Apparent activation energies, which depend strongly on the electrode potential, are derived from the temperature dependence of the Avrami plots.     

Sb induced (7×7) to (1×1) surface phase transformation of the Si(111) surface

Adsorption of Sb at a very low flux rate results in an epitaxial layer-by-layer growth on Si(111) surface held at room-temperature. Band-bending is not observed for submonolayer Sb coverages while sharp changes in the photoemission features are observed for 1.0 monolayer (ML) Sb adsorption. Changes in the core level binding energy and width in X-ray photoelectron spectroscopy, surface related feature in Electron energy loss spectroscopy and spot intensity ratios in Low energy electron diffraction studies suggest a surface phase transition upon adsorption of 1.0 monolayer of Sb. A plausible model is proposed to explain the abrupt metal-semiconductor transformation at this critical coverage of 1.0 ML.     

Irreducible Representations and Reduced Coefficients of Quantum Algebra SUq(4) in the SUq(4)⊃ SUq(2)⊕SUq(2) Basis

In this paper, the tensor-like method is presented, and the applications to quantum algebra SU_q(4) are given. The irreducible representation of SU_q(4) and a recurrent formula to calculate reduced coefficients of SU_q(4)⊃ SU_q(2)⊕SU_q(2) is obtained. Some of reduced matrix elements and q-reduced scalar factors (qRF) are tabulated.     

The Branching Rules for U(7)⊃0(7)⊃G2⊃0(3)

The branching rules for U(7)⊃0(7)⊃G₂ and G₂⊃0(3) for at most fourcolumned IRs of U(7)) and O(7) are given respectively by using the method of decomposition of Kronecker products of IRs of groups. The needed formulae for decomposition of Kronecker products of IRs of O(7) and G₂ are given also.     

Observation of CP violation in B(0) --> K(+)pi(-) and B(0) --> pi(+)pi(-)

We report observations of CP violation in the decays B(0) --> K(+)pi(-) and B(0) --> pi(+)pi(-) in a sample of 383 x 10(6) Upsilon(4S) --> BB[over] events. We find 4372+/-82 B(0) --> K(+)pi(-) decays and measure the direct CP-violating charge asymmetry A(Kpi) = -0.107+/-0.018(stat)(-0.004)(+0.007)(syst), which excludes the CP-conserving hypothesis with a significance of 5.5 standard deviations. In the same sample, we find 1139+/-49 B(0) --> pi(+)pi(-) decays and measure the CP-violating asymmetries S(pipi) = -0.60+/-0.11(stat)+/-0.03(syst) and C(pipi) = -0.21+/-0.09(stat)+/-0.02(syst). CP conservation in B(0) --> pi(+)pi(-) (S(pipi) = C(pipi) = 0) is excluded at a confidence level 1-C.L. = 8 x 10(-8), corresponding to 5.4 standard deviations.     

Molecular view of copper deposition chemistry: (Hexafluoroacetylacetonate)Cu(vinyltrimethylsilane) on a Si(1 0 0)-2 × 1 surface

The chemistry of a common copper deposition precursor, (hexafluoroacetylacetonate)Cu(vinyltrimethylsilane), (hfac)Cu(VTMS), on a single crystal Si(1 0 0)-2 × 1 surface is described at the molecular level using a combination of experimental surface analytical techniques under ultra-high vacuum conditions with computational analysis. At a cryogenic temperature of 100 K, (hfac)Cu(VTMS) adsorbs on this surface molecularly, without noticeable decomposition. Upon surface annealing, VTMS is easily released into the gas phase below the room temperature, while the hfac ligand is bound to the surface through the copper atom. When (hfac)Cu(VTMS) is adsorbed at room temperature, VTMS is released into the gas phase immediately, leaving surface adsorbate analogous in structure to the one formed by adsorption at cryogenic temperature and a brief annealing to room temperature. Upon surface annealing, the hfac ligand decomposes and constitutes the main source of impurities in copper deposition process.     

Observation of the color-suppressed decay B( 0)-->D(0)pi(0)

We report the first observation of color-suppressed B( 0)-->D(0)pi(0), D(*0)pi(0), D0eta, and D0omega decays, and evidence for B( 0)-->D(*0)eta and D(*0)omega. The branching fractions are B(B( 0)-->D0pi(0)) = (3.1 +/- 0.4 +/- 0.5)x10(-4), B(B( 0) -->D(*0)pi(0)) = (2.7(+0.8+0.5)(-0.7-0.6))x10(-4), B(B( 0) --> D0eta) = (1.4(+0.5)(-0.4) +/- 0.3)x10(-4), B(B( 0) --> D0omega) = (1.8 +/- 0.5(+0.4)(-0.3))x10(-4), and we set 90% confidence level upper limits of B(B( 0) --> D(*0)eta)<4.6 x 10(-4) and B(B( 0)-->D(*0)omega)<7.9 x 10(-4). The analysis is based on a data sample of 21.3 fb(-1) collected at the Upsilon(4S) resonance by the Belle detector at the KEKB e(+)e(-) collider.     

Estimate of B(B(over) -->Xgamma) at O(alpha(s)2)

Combining our results for various O(alpha[s]) corrections to the weak radiative B-meson decay, we are able to present the first estimate of the branching ratio at the next-to-next-to-leading order in QCD. We find B(B[over ]-->X[s]gamma)=(3.15+/-0.23) x 10(-4) for Egamma>1.6 GeV in the B[over ]-meson rest frame. The four types of uncertainties:nonperturbative (5%), parametric (3%), higher-order (3%), and m(c)-interpolation ambiguity (3%) have been added in quadrature to obtain the total error.     

The surface structure of BaO on Pt(1 1 1): (2 × 2)-reconstructed BaO(1 1 1)

The surface structure of BaO(1 1 1) has been determined using STM and computer modelling. The BaO(1 1 1) surface was prepared in thin film form on Pt(1 1 1) and presents a surface with twice the lattice parameter expected for that of the bulk termination, i.e. a (2 × 2) reconstruction. Computer modelling indicates that the bulk termination is unstable, but that the (2 × 2) reconstructed BaO(1 1 1) surface has a low surface energy and is hence a stable surface reconstruction. The (2 × 2) reconstruction consists of small, three-sided pyramids with (1 0 0) oriented sides and either oxygen or barium ions at the apices. Less regular surface reconstructions containing the same pyramids are almost equally stable, indicating that we may also expect less regular regions to appear with a fairly random distribution of these surface species. The simulations further suggest that a regular (4 × 4) reconstruction built up of bigger pyramids is even more energetically favourable, and some evidence is found for such a structure in the STM.     

A novel (8 × 4) superstructure as precursor to the c(4 × 4) phase during Sb/Si(0 0 1) desorption

The role of kinetics in the superstructure formation of the Sb/Si(0 0 1) system is studied using in situ surface sensitive techniques such as low energy electron diffraction, Auger electron spectroscopy and electron energy loss spectroscopy. Sb adsorbs epitaxially at room-temperature on a double-domain (DD) 2 × 1 reconstructed Si(0 0 1) surface at a flux rate of 0.06 ML/min. During desorption, multilayer Sb agglomerates on a stable Sb monolayer (ML) in a DD (2 × 1) phase before desorbing. The stable monolayer desorbs in the 600–850 °C temperature range, yielding DD (2 × 1), (8 × 4), c(4 × 4), DD (2 × 1) phases before retrieving the clean Si(0 0 1)-DD (2 × 1) surface. The stable 0.6-ML (8 × 4) phase here is a precursor phase to the recently reported 0.25-ML c(4 × 4) surface phase, and is reported for the first time.     

First-principles study of adsorption and diffusion on Ge/Si(0 0 1)-(2 × 8) and Ge/Si(1 0 5)-(1 × 2) surfaces

Using first-principles total-energy calculations, we have investigated the adsorption and diffusion of Si and Ge adatoms on Ge/Si(0 0 1)-(2 × 8) and Ge/Si(1 0 5)-(1 × 2) surfaces. The dimer vacancy lines on Ge/Si(0 0 1)-(2 × 8) and the alternate S_A and rebonded S_B steps on Ge/Si(1 0 5)-(1 × 2) are found to strongly influence the adatom kinetics. On Ge/Si(0 0 1)-(2 × 8) surface, the fast diffusion path is found to be along the dimer vacancy line (DVL), reversing the diffusion anisotropy on Si(0 0 1). Also, there exists a repulsion between the adatom and the DVL, which is expected to increase the adatom density and hence island nucleation rate in between the DVLs. On Ge/Si(1 0 5)-(1 × 2) surface, the overall diffusion barrier of Si(Ge) along direction is relative fast with a barrier of ∼0.83(0.61) eV, despite of the large surface undulation. This indicates that the adatoms can rapidly diffuse up and down the (1 0 5)-faceted Ge hut island. The diffusion is also almost isotropic along [0 1 0] and directions.     

Structure of the hydrogen stabilized MgO(1 1 1)-(1 × 1) surface from low energy electron diffraction (LEED)

A structural study has been performed on the MgO(1 1 1)-(1 × 1) surface by low energy electron diffraction (LEED) using experimental data obtained with a delay-line-detector LEED (DLD-LEED) system to minimize electron damage. It was found that the surface is terminated by a hydroxide layer with the top O-Mg interlayer spacing equal to 1.02 Å, which is close to the spacings between Mg and O planes in bulk brucite crystals (Mg(OH)₂). This is in good agreement with a recent study using photoelectron diffraction (PhD) spectroscopy and density functional theory calculation (DFT) [V.K. Lazarov, R. Plass, H.-C. Poon, D.K. Saldin, M. Weinert, S.A. Chambers, M. Gajdardziska-Josifovska, Phys. Rev. B 71 (2005) 115434]. The second interlayer spacing shows a small expansion of 3% and the third is bulk-like, while the DFT calculation predicted that the spacings below the top one are all bulk-like. This result clearly favors hydroxylation [K. Refson, R.A. Wogelius, D.G. Fraser, M.C. Payne, M.H. Lee, V. Milman, Phys. Rev. B 52 (1995) 10823] as a way of stabilizing the MgO(1 1 1) surface at low temperature over metallization, which has a top layer spacing of 0.86 Å for O termination and 1.25 Å for Mg termination [Lazarov et al. 2005; T. Tsukada, T. Hoshino, Phys. Soc. Jpn. 51 (1982) 2562, J. Goniakowski, C. Noguera, Phys. Rev. B 60 (1999) 16120].     

Chemisorption of 4-(4-amino-phenylazo) benzoic acid molecule on the Si(0 0 1)-(4 × 2) surface

Structural and electronic properties of self-assembled monolayer with 4-(4-amino-phenylazo) benzoic acid (APABA) on the Si(0 0 1)-(4 × 2) surface are investigated by ab initio calculation based on density functional theory. For the APABA chemisorption on the silicon surface, we have assumed two different binding sites: (i) amino group of molecule and (ii) carboxyl group of molecule. Considering amino-site, we have assumed two possible models for the chemisorption of molecules on the Si(0 0 1)-(4 × 2) surface: (i) an intrarow position between two neighboring Si dimers in the same dimer row (Model I), (ii) on-dimer position (Model II). We have found that Model II is 1.10 eV energetically more favorable than Model I. The Si-N bond length was calculated as 1.85 Å which is in excellent agreement with the sum of the corresponding covalent radii of 1.87 Å. Considering carboxyl-site, we have assumed exactly the same model as mentioned above. Again we have found that Model II is energetically favorable than Model I. The calculated bond lengths for Si-O and O-C are 1.76 and 1.35 Å, respectively.