Absorption of subpicosecond ultraviolet laser pulses in high-density plasma

The absorption of 250 fs KrF laser pulses incident on solid targets of aluminum, copper and gold has been measured for normal incidence as a function of laser intensity in the range of 10¹²–10¹⁴ W cm^–2 and as a function of polarization and angle of incidence for the intensity range of 10¹⁴–2.5×10¹⁵ W cm^–2. As the intensity increases from 10¹² W cm^–2 the reflectivity at normal incidence changes from the low-intensity mirror reflectivity value to values in the range of 0.5–0.61 at 10¹⁴ W cm^–2. For this intensity maximum absorption of 63–80% has been observed for p-polarized radiation at angles of incidence in the range of 54°–57°, increasing with atomic number. The results are compared with the expected Fresnel reflectivity from a sharp vacuum-plasma interface with the refractive index given by the Drude model and also to numerical calculations of reflectivity for various scale length density profiles. Qualitative agreement is found with the Fresnel/Drude model and quantitative agreement is noticed with the numerical calculations of absorption on a steep density profile with normalized collision frequencies, v/, in the range of 0.13–0.15 at critical density and normalized density gradient scale lengths, L/₀, in the range of 0.018–0.053 for a laser intensity of 10¹⁴ W cm^–2.At 2.5×10¹⁵ W cm^–2 a small amount of preplasma is present and maximum absorption of 64–76% has been observed for p-polarized radiation at angles of incidence in the range of 45°–50°.Dedicated to Prof. Dr. Rudolf Wienecke on the occasion of his 65^th birthdayOn leave from: Department of Electrical Engineering, University of Alberta, Edmonton, T6G 2G7, Canada     

Low-Temperature Midinfrared Absorption in GaSe

We report the measurement of the temperature dependence of the absorption spectra of - GaSe over the temperature range 300 K to 5 K. Measurements have been made for both the e-ray (polarized parallel to the crystals c-axis) and the o-ray (polarized perpendicular to the c-axis), over the spectral range 4000 to 10 cm^–1. Nine absorption lines at 417, 440, 499, 546, 891, 945, 1015, 1093, 1270 cm^–1 were recorded at 300 K for the e- ray spectra. Some of these lines were identified using the results of a modified single layer, linear chain model of GaSe. The lines at 417, 440 and 499 cm^–1 were assigned to local impurity absorption originating from N, Mg and O, respectively. The weak lines at 945, 1015 and 1093 cm^–1 were assigned to hole transitions from the acceptor levels to the top of the valence band. Two absorption lines at 891 cm^–1 and 1270 cm^–1 were assigned to hole transitions from the quasi-local acceptor levels to the double degenerate valence sub-bands ₅ or ₆. The origin of lines recorded in the far IR absorption spectra at 20, 37 cm^–1 and 362 cm^–1 were also identified.     

Laser-induced free-carrier absorption in Si single crystal

The transmitted energy density in thin single Si crystal, wafers is measured at=1.06 m as a function of the incident energy density for a Nd laser pulse of 30 ns duration. Non-linear effects begin to become important at about 0.3 J/cm². The contribution due to free-carriers is separated from the interband one by using measurements made at low energy density and at different sample temperatures in the 20°–150 °C range. The time dependence of the free-carrier concentration and of the lattice temperature is computed for different values of the Auger constant. The experimental data in the 0.2–2.5 J/cm² energy density range are fitted with an Auger constant of 10^–30 cm⁶s^–1.Work supported in part by M.P.I. and G.N.S.M.-C.N.R.     

Chemical structure and internal diffusion within polymer chains in the melt

The single chain dynamics of polydimethylsiloxane in the melt is studied by means of quasielastic neutron scattering. For this polymer the wave vector range 0.03 Å^–1q0.30 Å^–1 covers the regime of universal modes as well as local diffusive processes. A model is described which incorporates the specific chemical structure of the macromolecule and allows to interpret our data in the full wave vector regime. The only parameter which enters the model, the monomer diffusion constantD _m, is found to be (1.2±0.2)·10^–5 cm²s^–1.     

Collisional excitation X-ray laser experiments in plasmas produced by 0.53-μm and 0.35-μm laser light

Recent Ne- and Ni-like X-ray laser experiments carried out at the Centre d'Etudes de Limeil-Valenton (CEL-V) are reviewed. A variety of experiments in Ne-like X-ray lasers were performed; here we discuss measurements of soft X-ray amplification in Ge (Z=32) and Sr (Z=38) plasmas. In Ge plasmas produced by 0.53-m laser light at an irradiance of 6.0×10¹³ W/cm², gains between 2.2–2.5 cm^–1 on the 232.2 and 236.2 Å J=2–1 lines and a gain of 1.0 cm^–1 on the 196.1 Å J=0–1 line were measured. In addition, gains of 4.4 cm^–1 and 4.0 cm^–1 have been demonstrated on the J=2–1 transitions at 164.1 and 166.5 Å in Nelike Sr at laser intensities of 1.3×10¹⁴ W/cm². The effects of pumping the Ne-like Se X-ray laser with 0.35-m laser light have also been investigated; the Se lasing spectra is similar to that obtained with 0.53-m light. Experiments have also been carried out to optimize the gain of the 50.3 Å Ni-like Yb (Z=70) J=0–1 line. For Yb, no significant increase in gain over that previously reported was seen, but the time history of the Ni-like Yb X-ray laser was measured for the first time. Finally, attempts to extrapolate the Ni-like results to shorter wavelength were made using Ta (Z=73), W (Z=74), and Re (Z=75). No definitive observation of the Ni-like J=0–1 lasing lines was made in these experiments.     

Estimation of the Optimum Concentration Interval of the Contents of Praseodymium, Neodymium, Europium, Holmium, and Erbium in a Solution

Based on the electronic absorption spectra of Pr³⁺, Nd³⁺, Eu³⁺, Ho³⁺, and Er³⁺ ions in 1 M aqueous solutions of chloric acid, calibration graphs have been constructed in a concentration of metals–optical density of a solution format for different frequencies. The band for praseodymium was used at 22,520 cm^–1, for neodymium at 17,380, 13,480, and 12,560 cm^–1, for europium at 25,380 cm^–1, for holmium at 18,580 and 15,580 cm^–1, and for erbium at 39,160, 26,480, and 19,160 cm^–1. The errors in determining the concentration of the indicated elements as a function of their content have been calculated. It is shown that for perchloric solutions of praseodymium it is possible to correctly determine its contents within the concentration range 0.1–1.5% at a frequency of 22,520 cm^–1; for neodymium the ranges are 0.4–1.0, 0.3–1.0, and 0.5–1.0% at 17,380, 13,480, and 12,560 cm^–1, respectively; for europium 0.4–1.5% at 25,380 cm^–1; for holmium — 0.2–1.5 and 0.4–1.5% at 15,580 and 18,580 cm^–1, and for erbium the range is 0.4–1.0% at frequencies of 39,160, 26,480, and 19,160 cm^–1.     

Far infrared properties of SbSI-SbSeI mixed crystals

Far infrared reflectivity of eight SbS_1–x Se _x I mixed single crystals was measured in 50–400 cm^–1 region in polarized light at 25 and –170 C. While the low-frequency ferroelectric mode shows clear one-mode behaviour the second B_1u mode in 126–180 cm^–1 region shows two-mode behaviour. The existence of local and gap modes in this case is discussed.The author thanks ing. K.Nejezchleb from College of Chemical Technology in Pardubice for the crystals, L.Novák for helpful discussions, Z.Híová for computations and N.Dvoáková for help and figure drawing.     

Space- and time-resolved investigation of gain lines in Na-like copper

We report space- and time-resolved measurements of the gain coefficient for four gain lines in sodium-like copper. The lines investigated include the twon = 1 transitions 5g–4f and 5f–4d at 11.1 nm and 10.3nm and the twon = 2 transitions 6g–4f and 6f–4d at 7.2 nm, and 6.9 nm. The investigations were carried out for four irradiation intensities from 4 × 10¹² W/cm² to 3 × 10¹³ W/cm² using the Asterix IV high-power iodine laser at Garching (wavelength 1.315 µm, pulse duration 450 ps).The main results may be summarized as follows: On varying the laser intensity it was found that the highest values of the gain could be seen at an irradiation of 8 × 10¹² W/cm². For then = 1 lines the spatial maximum of the gain occurred at a distance of 300 µm from the target, and for then = 2 lines at 200 µm. The temporal gain maximum occurred at a time of 1.8 ns after the pulse maximum. The gain values range up to 2.6 cm^–1.Dedicated to the memory of the late Prof. Shi-shen Chen, who contributed to the early phase of this work     

Edge cathode luminescence of zinc-selenide single crystals at high levels of excitation

Investigating cathode-luminescence spectra over a broad range of temperature at high levels of excitation (G 10²⁷ cm^–3 · sec^–1) permits the establishment of the experimental conditions for the observation of a multiplasmon structure in studying electron-hole plasma of zinc-selenide single crystals.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 69–73, July, 1989.     

Shallow acceptor population and free hole concentration in Si: In and Si:Ga with IR-photoexcitation

Hall measurements at low temperaturesT<50 K have been performed on Si:In (N _In10¹⁷ cm^–3) and Si:Ga (N _Ga10¹⁸ cm^–3) with infrared photoexcitation of holes into the valence band. It is shown in quantitative agreement with a theoretical model that the population of shallow acceptors, e.g. B and Al, which are present as impurities in concentrations ofN _B,Al10¹²-10¹⁴ cm^–3 strongly affects the photoexcited hole concentration. Photo-Hall measurements can, therefore, serve as a tool for the determination of low impurity acceptor concentrations in the case of high In- or Ga-doping. Hole capture coefficientsB _In=6×10^–4 (T/K)^–1,8 cm³ s^–1 andB _Ga=2×10^–4 (T/K)^–1 cm³ s^–1 have been determined.     

Photoelectric properties of Pb1−x−y Sn x Ge y Te:In epitaxial films

Pb_1–x–y Sn _x Ge _y Te:In epitaxial films are examined in a wide temperature interval and at various background fluxes. These films have high sensitivity to infrared radiation in the spectral range <20m. The lifetime depends exponentially on temperature and varies from several seconds at T=10 K to 10^–2 s at T=20 K. The two-electron model of Jahn-Teller centers is proposed to explain the results. Multielement photoresistors based on these films are fabricated and D*=1.7×10¹³ cm Hz^1/2 W^–1 at T=25 K is achieved. Noise of the photoresistors is independent of background flux when it varies from 10¹² cm^–2 s^–1 to 10¹⁸ cm^–2 s^–1. As compared with Si:Ga and Ge:Hg photoresistors, the responsitivity is several orders larger at the operating temperature 25–30 K.     

Femtosecond-pulse laser ablation of human corneas

A femtosecond pulse laser in the visible spectral region shows promise as a potentially new powerful corneal sculpting tool. It combines the clinical and technical advantages of visible wavelengths with the high ablation quality observed with nanosecond-pulse excimer lasers at 193 nm. A femtosecond and a nanosecond dye laser with pulse durations of 300 fs and 7 ns, and centre wavelengths at 615 nm and 600 nm, respectively, both focused to an area of the order of 10^–5 cm², have been applied to human corneal ablation. Nanosecond laser pulses caused substantial tissue disruption within a 30–100 m range from the excision edge at all fluences above the ablation threshold of F _th60 J cm^–2 (I _th9 GW cm^–2). Completely different excisions are produced by the femtosecond-pulse laser: high quality ablations of the Bowman membrane and the stroma tissue characterised by damage zones of less than 0.5 m were observed at all fluences above ablation threshold of F _th1 J cm^–2 or I _th3 TW cm^–2 (3×10¹² W cm^–2). The transparent cornea material can be forced to absorb ultrashort pulses of extremely high intensity. The fs laser generates its own absorption by a multiphoton absorption process.     

Theoretical calculations and Raman spectrum of intercalation modes in LixInSe

By using an extended linear-chain model which includes the interlayer forces, we have calculated the new vibrational modes, of Li intercalated InSe. The dispersion curves along thek _z wavevector perpendicular to the layers for the -polytype are determined in the first Brillouin zone. Assuming that the interlayer interaction is not modified upon intercalation and the interaction between lithium atom and adjacent layers in the van der Waals plane has the same value than the interlayer one, the new modes are determined with the force constant given by the rigid layer mode of the, -polytype at 18 cm^–1. This model gives the variation of the acoustic branches and the appearance of two optical intercalation modes at higher frequencies. The Brillouin zone boundary modes of the acoustic branches at 18 and 41 cm^–1 in the pure material are calculated to be 22 and 50 cm^–1 respectively forx=1/2. The dispersion of the new optical branches is flat along thez-direction and frequencies are obtained at 96 cm^–1 for the Li mode perpendicular tok _z and at 218 cm^–1 for the Li mode parallel tok _z. We compare also our results with the Li mode frequencies obtained in a total energy calculation. Raman scattering experiments have been performed in intercalated sample in order to verify the proposed model.     

The UV absorption spectrum of the phenyl radical isolated in solid argon

Phenyl radicals have been generated by photodecomposition of nitrosobenzene isolated in solid argon at 12 K. In this medium the origin of the first UV absorption band of nitrosobenzene corresponding to theS ₀ S ₂ transition is found at 30260 cm^–1. Excitation with an excess energy of 2200 cm^–1 results in very efficient photodissociation. The fragments NO and phenyl are stable for many hours. Annealing of the sample above 35 K led to partial recombination and recovery of the absorption spectrum of nitrosobenzene. The UV spectrum of the phenyl radical was obtained in the wavenumber range 25000–45000 cm^–1, apparently without contamination by other species. It shows sharp lines at 25220, 33880, and 34820 cm^–1 and two broader maxima at 38360 and 41060 cm^–1. Of these only the line at 34820 cm^–1 had been assigned to the phenyl radical in earlier work. These data are compared to recent molecular orbital calculations.Dedicated to Prof. F. P. Schäfer on the occasion of his 65th birthday.     

Generation of cyclotron radiation by light holes in germanium

The properties of the light hole cyclotron resonance laser are studied in detail. The emission spectrum and the tuning characteristics are analysed. Two regions of continuously tunable stimulated emission between 30 to 50 cm^–1 and 70 to 90 cm^–1 are found. Besides the time behaviour of the emission the spectral gain is measured for the first time with the help of a secondp-Ge laser, A gain value of 0.2 cm^–1 is found, which is significantly larger than the value found for the light to heavy hole laser. An application of the tunable laser is demonstrated by measuring the central cell splitting the photoconductivity signal of shallow donors inn-GaAs.     

Photoluminescence and gain spectroscopy of highly excited epitaxial GaN-layers

The spectra of photoluminescence and optical gain of GaN have been measured at low temperatures under N₂-laser excitation.At low excitation levels (I _exc10⁴W cm^–2) we observe free and bound exciton recombination. At intermediate excitation (I _exc10⁵W cm^–2), inelastic exciton-exciton scattering processes show up. At the highest excitation levels (I _exc10⁶ W cm^–2) we report here for the first time the emission from an electron-hole plasma.     

Investigations on the excited states of Eu2+ in CaF2-and SrF2-crystals by two-photon absorption spectroscopy

The two-photon-excitation spectra of Eu²⁺:CaF₂ and Eu²⁺:SrF₂ have been studied at 4.2 K in the region between 24,100cm^–1 and 28,100cm^–1. Besides a broad two-photon absorption region two groups of sharp lines at 27,600cm^–1 and 28,000cm^–1 in Eu²⁺:CaF₂ (27,670cm^–1 and 28,080cm^–1 in Eu²⁺:SrF₂) are identified with the transitions 4f ⁷:⁸ S _7/24f ⁷:⁶ P _7/2,⁶ P _5/2. It is shown that the 4f-states of Eu²⁺ in this host lattice differ significantly in their physical properties from the same states of the isoelectronic Gd³⁺. For these transitions, however, the calculated two-photon absorption rates are in good agreement with the experiments.A project of the Sonderforschungsbereich 65 Festkörperspektroskopie, Darmstadt-Frankfurt, supported by the Deutsche Forschungsgemeinschaft     

Nearest neighbor effect on capture cross sections measured in IR phototransients on Si:In

The extrinsic photoconductive decay at T=20–100 K is analyzed in FZ-grown Si: In material after pulsed irradiation by a PbSSe infrared laser (=4 m). Trapping time constants (=10 ns-100 s) are resolved for the prevalent In acceptor (N _In=10¹⁶–10¹⁷ cm^–3) and for additional shallow acceptors B, Al, and the X(In)-center present at low concentrations (N=10¹²–10¹⁴ cm^–3). Hole capture cross sections determined for the acceptor levels show a large scatter over up to 4 orders of magnitude. It is shown that the capture cross section is dependent on all the dopant concentrations present in the sample due to nearest neighbor interaction. Due to the formation of donor-acceptor dipoles, the capture cross section assumes low values. A model calculation of the interaction based on only fundamental parameters of Si is in accordance with the experimental data within the experimental error. The hole capture cross sections for isolated acceptors are _p=1×10^–12, 1×10^–14, 1×10^–13, 2.5×10^–13 cm² for indium, X-center, aluminum, and boron at the temperatures T=95 K, 100 K, 70 K, 45 K, respectively.     

Infrared phonon spectra of 3d-metal doped YBa2(Cu1-x M x )3O7-δ

Infrared (IR) absorption spectra of doped YBa₂(Cu_1–x M _x )₃O_7–, with M representing Co, Fe, Ni, and Zn were observed as a function of concentrationx. TheB _1u IR mode at 580 cm^–1 was observed for all samples which were in the orthorhombic phase, which includes all the Ni and Zn doped samples and the lower concentrations (x<2.5%) for Fe and Co samples. The tetragonal phase of Co and Fe systems (x%>2.5%) shows three new IR modes at 655 cm^–1, 340 cm^–1, and 175 cm^–1. The frequency of the B_1u mode at 580 cm^–1 remains unchanged for all the Ni and Zn concentrations. In contrast, this mode shows a strong monotonic frequency softening with increase in Co substitution, while in the Fe-system it shows a comparable monotonic mode softening for 3%x%0%, and then remains unchanged for 12%x%3%. These observations indicate that Fe and Co substitute on the Cu(1) sites, whereas Ni and Zn most likely substitute on Cu(2) sites. We attribute the difference in the mode softening for Co and Fe to different Cu(1) local environments for these two elements. Indication for a chain-plane charge transfer based on our results is also discussed.     

Electronic absorption in silicate mineral of copper

The electronic absorption spectrum of chrysocolla, a silicate mineral of copper, has been studied at room and liquid air temperatures. The observed bands were satisfactorily explained as belonging to Cu²⁺ ion subjected to tetragonal and spin-orbit fields. A good fit between the theoretical and observed band positions was obtained for the following crystal field parameters:Dq=–1400 cm^–1 Ds=–3000 cm^–1 Dt=–800 cm^–1 =–800 cm^–1