Effect of 100 MeV O7+ ion beam irradiation on structural,optical and electronic properties of SnO2 thin films

In this paper, we present the impact of swift heavy ion beam irradiation on the structural, optical and electronic properties of SnO₂ thin films. Thin films were deposited using the pulsed laser deposition technique on Al₂O₃ substrates. Atomic force microscopy, X-ray diffraction, UV–visible absorption and temperature-dependent resistivity measurements were performed to explore the morphological, structural, optical and electronic properties of the as-deposited and irradiated samples. The peak intensity of the (200) peak was found to decrease monotonously with increasing irradiation fluence. The band gap energy of the 1×10¹¹ ion/cm² irradiated sample was found to increase. The electrical resistivity of the samples showed a continuous increase with the irradiation fluence.     

50 MeV Li3+ ion irradiation effect on structural, electrical, and dielectric properties of PVA-based nanocomposite polymer electrolytes

Nanocomposite polymer electrolyte thin films of polyvinyl alcohol (PVA)-orthophosphoric acid (H₃PO₄)-Al₂O₃ have been prepared by solution cast technique. Films are irradiated with 50 MeV Li³⁺ ions having four different fluences viz. 5?×?10¹⁰, 1?×?10¹¹, 5?×?10¹¹, and 1?×?10¹² ions/cm². The effect of irradiation on polymeric samples has been studied and characterized. X-ray diffraction spectra reveal that percent degree of crystallinity of samples decrease with ion fluences. Glass transition and melting temperatures have been also decreased as observed in differential scanning calorimetry. A possible complexation/interaction has been shown by Fourier transform infrared spectroscopy. Temperature-dependent ionic conductivity shows an Arrhenius behavior before and after glass transition temperature. It is observed that ionic conductivity increases with ion fluences and after a critical fluence, it starts to decrease. Maximum ionic conductivity of ～2.3?×?10^?5 S/cm owing to minimum activation energy of ～0.012 eV has been observed for irradiated electrolyte sample at fluence of 5?×?10¹¹ ions/cm². The dielectric constant and dielectric loss also increase with ion fluences while they decrease with frequency. Transference number of ions shows that the samples are of purely ionic in nature before and after ion irradiation.     

Influence of electron beam irradiation on structural and optical properties of α-Ag2WO4 nanoparticles

The influence of 8 MeV electron beam irradiation on the structural and optical properties of silver tungstate (α-Ag₂WO₄) nanoparticles synthesized by chemical precipitation method was investigated. The dose dependent effect of electron irradiation was investigated by various characterization techniques such as, X-ray diffraction, scanning electron microscopy, UV–vis absorption spectroscopy, photoluminescence and Raman spectroscopy. Systematic studies confirm that electron beam irradiation induces non-stoichiometry, defects and particle size variation on α-Ag₂WO₄, which in turn results changes in optical band gap, photoluminescence spectra and Raman bands.     

Effect of gamma irradiation on the structural,thermal and optical properties of Makrofol BL 2–4

Makrofol BL 2–4 is an extrusion film based on Makrolon polycarbonate. It comprises excellent die-cutting performance combined with high light transmission and moderate light scattering properties. It is a class of polymeric solid state nuclear track detectors which has many applications in various radiation detection fields. In the present work, Makrofol samples were irradiated using different gamma doses ranging from 10 to 350 kGy. The structural modifications in the gamma-irradiated Makrofol samples have been studied as a function of dose using different characterization techniques such as X-ray diffraction, intrinsic viscosity, Fourier transform infrared spectroscopy, thermogravimetric analysis, refractive index and color difference studies. The gamma irradiation in the dose range 20–200 kGy led to a more compact structure of Makrofol polymer, which resulted in an improvement in its thermal stability with an enhancement in its structural and optical properties.     

Effect of NaF on optical and structural properties of CdxZn1−xS nano crystalline films

This work investigates the effect of NaF on optical and structural properties of nano crystalline Cd_xZn_1?xS films. The Cd_xZn_1?xS films are prepared through chemical bath deposition (CBD) technique in aqueous alkaline bath and their subsequent condensation on substrates. The as-obtained samples are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV–VIS absorption spectroscopy. Micro structural features, obtained from XRD analysis confirm the formation of cubic phase of undoped as well as NaF doped Cd_xZn_1?xS nano particles while SEM observations depict non-uniform distribution of grains. These results show the average grain size of pure as well as NaF doped samples to range from 50 to 90 nm. Tauc's plots, extracted from absorption spectra exhibit absorption to be dominating mainly in blue-green region of visible spectrum. The room-temperature photoluminescence (PL) spectra of Cd_xZn_1?xS samples show a peak around 425 nm, which gets blue shifted for doped sample indicating improvement in PL properties on its addition.     

Effect of Fe3+ doping on structural,optical and electrical properties δ-Bi2O3 thin films

Fe³⁺ doped δ-Bi₂O₃ thin films were prepared by sol–gel method on quartz glass substrate at room temperature and annealed at 800 °C. The thin films were then characterized for structural, surface morphological, optical and electrical properties by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption measurements and d.c. two-probe, respectively. The XRD analyses revealed the formation δ-Bi₂O₃ followed by a mixture of Bi₂₅FeO₄₀ and Bi₂Fe₄O₉. SEM images showed reduction in grain sizes after doping and the optical studies showed a direct band gap which reduced from 2.39 eV for pure δ-Bi₂O₃ to 1.9 eV for 10% Fe³⁺ doped δ-Bi₂O₃ thin film. The electrical conductivity measurement showed the films are semiconductors.     

Effect of 100 MeV Si7+ ions’ irradiation on Pd/n-GaAs Schottky diodes

Pd/n-GaAs realized devices (junction made on a virgin substrate prior to irradiation) and Pd/n-GaAs fabricated devices (junction realized after the virgin substrate irradiation) have been irradiated with 100?MeV Si⁷⁺ ions for the varying fluence of 10¹²–10^13?ions/cm². The devices have been characterized by I–V and C–V techniques for an electrical response. The electrical characterization of these devices shows the presence of interfacial layer. Moreover, the C–V characteristics show strong frequency dependence behavior, which indicates the involvement of interfacial charge layer with deep electron states. The hydrogenation of these devices has not caused any significant change in the electrical (I–V and C–V) characteristics. The observed results have been discussed in the realm of radiation-induced defects, which cause the carrier removal and compensation phenomena to cause the observed high resistivity and filling and unfilling of these traps’ level to cause strong frequency dependence behavior.     

Effect of 60Co γ-irradiation on structural and optical properties of thin films of Ga10Se80Hg10

Thin films of Ga₁₀Se₈₀Hg₁₀ have been deposited onto a chemically cleaned Al₂O₃ substrates by thermal evaporation technique under vacuum. The investigated thin films are irradiated by ⁶⁰Co γ-rays in the dose range of 50–150 kGy. X-ray diffraction patterns of the investigated thin films confirm the preferred crystallite growth occurs in the tetragonal phase structure. It also shows, the average crystallite size increases after γ-exposure, which indicates the crystallinity of the material increases after γ-irradiation. These results were further supported by surface morphological analysis carried out by scanning electron microscope and atomic force microscope which also shows the crystallinity of the material increases with increasing the γ-irradiation dose. The optical transmission spectra of the thin films at normal incidence were investigated in the spectral range from 190 to 1100 nm. Using the transmission spectra, the optical constants like refractive index (n) and extinction coefficient (k) were calculated based on Swanepoel’s method. The optical band gap (E_g) was also estimated using Tauc’s extrapolation procedure. The optical analysis shows: the value of optical band gap of investigated thin films decreases and the corresponding absorption coefficient increases continuously with increasing dose of γ-irradiation.     

Structural,optical and electrical properties of 60 MeV C5+ ion-irradiated poly(3-methylthiophene) films

The structural, optical and electrical properties of 60 MeV C⁵⁺ ion-irradiated poly(3-methylthiophene) (P3MT) synthesized by the chemical oxidation polymerization method have been studied. The P3MT powder was dissolved in chloroform (CHCl₃), and thin films of thickness 2 μm were prepared on glass and Si substrates. The polymerization was confirmed by the FTIR spectrum. Then films were irradiated by 60 MeV C⁵⁺ ions at different fluences. FTIR spectra show methyl group evolution after irradiation. The optical band gap decreases slightly after irradiation and the DC conductivity increases by about one order of magnitude after irradiation at the highest fluence. The role of S _e has also been discussed when compared with 60 MeV Si⁵⁺ ion irradiation of P3MT. The morphological changes are observed using SEM.     

Effect of 30 Mev Li 3+ ion and 8 MeV electron irradiation on n-channel MOSFETs

The effect of 30 v MeV Li 3+ ion and 8 v MeV electron irradiation on the threshold voltage ( V TH ), the voltage shift due to interface trapped charge ( j V Nit ), the voltage shift due to oxide trapped charge ( j V Not ), the density of interface trapped charge ( j N it ), the density of oxide trapped charge ( j N ot ) and the drain saturation current ( I D v Sat ) were studied as a function of fluence. Considerable increase in j N it and j N ot , and decrease in V TH and I D v Sat were observed in both types of irradiation. The observed difference in the properties of Li 3+ ion and electron irradiated MOSFETs are interpreted on the basis of energy loss process associated with the type of radiation. The study showed that the 30 v MeV Li 3+ ion irradiation produce more damage when compared to the 8 v MeV electron irradiation because of the higher electronic energy loss value. High temperature annealing studies showed that trapped charge generated during ion and electron irradiation was annealed out at 500 v °C.     

Effect of γ-irradiation on optical and chemical properties of CR-39 polymer

CR-39 polymer samples were irradiated with γ-irradiation up to dose ranging from 500 to 2000 kGy. The virgin and γ-irradiated polymer samples were investigated using UV–visible spectroscopy and Fourier transform infrared (FTIR) spectroscopy. In the present work, the Urbach energy was calculated using the Urbach edge method. Also, the direct and indirect energy band gaps in virgin and γ-irradiated CR-39 polymer samples were calculated. The values of indirect energy band gap were found to be lower than the corresponding values of direct energy band gap. The decrease in the optical energy band gap with increasing γ-irradiation dose was discussed on the basis of γ-irradiation-induced modifications in CR-39 polymer. The correlation between optical energy band gap and the number of carbon atoms in a cluster with modified Tauc's equation was also discussed. The FTIR spectra show considerable changes due to γ-irradiation, indicating that the detector is not chemically stable.     

Effect of dopants on the structural,optical and electrical properties of sol–gel derived ZnO semiconductor thin films

Undoped, Ga-, In-, Zr-, and Sn-doped ZnO transparent semiconductor thin films were deposited on alkali-free glasses by sol–gel method. 2-methoxyethanol (2-ME) and diethanolamine (DEA) were chosen as a solvent and a stabilizer, respectively. The doping concentration was maintained at 2 at.% in the impurity doping precursor solutions. The effects of different dopants on the structural, optical, and electrical properties of ZnO thin films were investigated. XRD results show that all annealed ZnO-based thin films had a hexagonal (wurtzite) structure. ZnO thin films doped with impurity elements obviously improved the surface flatness and enhanced the optical transmittance. All impurity doped ZnO thin films showed high transparency in the visible range (>91%). The Ga- and In- doped ZnO thin films exhibited higher Hall mobility and lower resistivity than did the undoped ZnO thin film.     

Effect of 100 MeV swift Si8+ ions on structural and thermoluminescence properties of Y2O3:Dy3+nanophosphor

Nanoparticles of Y₂O₃:Dy³⁺ were prepared by the solution combustion method. The X-ray diffraction pattern of the 900°C annealed sample shows a cubic structure and the average crystallite size was found to be 31.49?nm. The field emission scanning electron microscopy image of the 900°C annealed sample shows well-separated spherical shape particles and the average particle size is found to be in a range 40?nm. Pellets of Y₂O₃:Dy³⁺ were irradiated with 100?MeV swift Si⁸⁺ ions for the fluence range of 3?×?10^11_3?×?10¹³ ions cm^?2. Pristine Y₂O₃:Dy³⁺ shows seven Raman modes with peaks at 129, 160, 330, 376, 434, 467 and 590?cm^?1. The intensity of these modes decreases with an increase in ion fluence. A well-resolved thermoluminescence glow with peaks at ～414?K (T_m1) and ～614?K (T_m2) were observed in Si⁸⁺ ion-irradiated samples. It is found that glow peak intensity at 414?K increases with an increase in the dopant concentration up to 0.6?mol% and then decreases with an increase in dopant concentration. The high-temperature glow peak (614?K) intensity linearly increases with an increase in ion fluence. The broad TL glow curves were deconvoluted using the glow curve deconvoluted method and kinetic parameters were calculated using the general order kinetic equation.     

Effect of sputtering pressure on structural and optical properties of silver oxide thin films; Kramers–Kronig method

Silver oxide nano layers were prepared by RF magnetron sputtering on amorphous SiO₂ substrates. O₂ pressure in chamber was varied from 1 to 4 and 7 mTorr during growth process. The effects of different O₂ pressure on structural, morphological and optical properties of the films were investigated by means of X-ray diffraction, scanning electron microscopy, atomic force microscopy and UV–Vis spectroscopy analyses. Optical reflectance measured in the wavelength of 350–950 nm by spectroscopy. Other optical properties and optical band gaps were calculated using Kramers–Kronig relations. The X-ray diffraction measurements showed change in crystalline structure with increasing O₂ pressure. Preferred orientation has been changed to another growth orientation at 4 mTorr O₂ pressure. The Atomic force microscope images showed increasing in roughness consistently by increasing oxygen pressure. The thickness of the thin films decreases (from 217 to 180 nm) with increasing O₂ pressure. Optical results revealed that the highest optical band gap of 3.1 eV and the highest transmittance of?~?80% were achieved at lower O₂ pressure (1 mTorr).     

Investigation of the crystallinity,structural, and optical properties in hydrotreating of Li–W co-doped ZnO thin films

The hydrotreated Li–W co-doped ZnO (LWZO:H) thin films was prepared on quartz glass substrates by RF magnetron sputtering at substrate temperature 100 °C with varied hydrogen flow ratios. The X-ray diffraction spectra indicated that the hydrotreating Li–W co-doped ZnO films showed a preferred orientation toward the c-axis. The chemical compositions of all samples were confirmed by X-ray photoelectron spectroscopy, which clearly showed the existence of W as a doping element into ZnO crystal lattice. The surface morphology of LWZO:H thin films changed with the increasing R value can clearly be seen. The average transmittance of the films was found to be almost 85 % for the wavelength range of 400–1,200 nm. Meanwhile, the optical band gap increase of the films may be attributed to the band Burstein–Moss effect.     

Effect of annealing temperature on the structural and optical properties of ZnO thin films prepared by sol–gel method

In this work, ZnO thin films were synthesized by sol–gel method on glass substrates followed by calcinations on different temperatures. The effect of annealing temperature on the structure and optical properties of the films was studied. The structural characteristics of the samples were analyzed by X-ray diffraction and atomic force microscope. The optical properties were studied by a UV-visible spectrophotometer. The results show that all the prepared ZnO thin films have a high preferential oriented c-axis orientation with compact hexagonal wurtzite structure. With the increasing annealing temperature (mse.ufl.edu), the intensity of (002) peak, particle size, surface RMS roughness, and absorbance of the ZnO thin films were increased as well. On the contrary, the transmittance and optical band gaps were decreased.     

Laser irradiation effects on the surface,structural and mechanical properties of Al–Cu alloy 2024

Laser irradiation effects on surface, structural and mechanical properties of Al–Cu–Mg alloy (Al–Cu alloy 2024) have been investigated. The specimens were irradiated for various fluences ranging from 3.8 to 5.5 J/cm² using an Excimer (KrF) laser (248 nm, 18 ns, 30 Hz) under vacuum environment. The surface and structural modifications of the irradiated targets have been investigated by scanning electron microscope (SEM) and X-ray diffractometer (XRD), respectively. SEM analysis reveals the formation of micro-sized craters along the growth of periodic surface structures (ripples) at their peripheries. The size of the craters initially increases and then decreases by increasing the laser fluence. XRD analysis shows an anomalous trend in the peak intensity and crystallite size of the specimen irradiated for various fluences. A universal tensile testing machine and Vickers microhardness tester were employed in order to investigate the mechanical properties of the irradiated targets. The changes in yield strength, ultimate tensile strength and microhardness were found to be anomalous with increasing laser fluences. The changes in the surface and structural properties of Al–Cu alloy 2024 after laser irradiation have been associated with the changes in mechanical properties.     

Investigation of structural and optical properties of 100 MeV F7+ ion irradiated Ga10Se90-xAlx thin films

Present work focuses on the effect of swift heavy ion (SHI) irradiation of 100 MeV F⁷⁺ ions by varying the fluencies in the range of 1 × 10¹² to 1 × 10¹³ ions/cm² on the morphological, structural and optical properties of polycrystalline thin films of Ga₁₀Se_90-xAl_x (x = 0, 5). Thin films of ~300 nm thickness were deposited on cleaned Al₂O₃ substrates by thermal evaporation technique. X-ray diffraction pattern of investigated thin films shows the crystallite growth occurs in hexagonal phase structure for Ga₁₀Se₉₀ and tetragonal phase structure for Ga₁₀Se₈₅Al₅. The further structural analysis carried out by Raman spectroscopy and scanning electron microscopy verifies the defects or disorder of the investigated material increases after SHI irradiation. The optical parameters absorption coefficient (α), extinction coefficient (K), optical band gap (E_g) and Urbach’s energy (E_U) are determined from optical absorption spectra data measured from spectrophotometry in the wavelength range 200–1100 nm. It was found that the values of absorption coefficient and extinction coefficient increase while the value of optical band gap decreases with the increase in ion fluence. This post irradiation change in the optical parameters was interpreted in terms of bond distribution model.