硫属化合物半导体热电材料的电热输运协同调控

热电材料作为一种新型的清洁能源材料,能够直接实现热能和电能之间相互转换,有望为提高能源的利用率、缓解环境污染问题提供一种综合协调的选择,因此在能源危机越来越严重的21世纪,热电材料的研究引起了各国研究者的广泛兴趣。然而,电热输运的协同调制一直是一个历史性的难题。硫属化合物半导体作为最重要的一类热电材料,近年来其电热输运性质的协同调控受到了广泛的关注。本文综述了硫属化合物半导体热电材料在电热输运协同调控方面所取得的最新研究进展,分析了其电热输运协同调控及热电性能优化的内在物理机制,并展望这些新的调控策略在热电材料发展的应用前景。     

二维材料双电层场晶体管的研究

近年来, 二维材料特别是二维过渡金属硫属化合物材料作为一个新兴研究领域引起了人们极大的兴趣, 它们也被认为是基于石墨烯电子器件的补充材料. 过渡金属硫属化合物之所以能引起人们强烈的兴趣, 在于它们奇特的性质以及其在催化, 能量存贮, 电子, 光电等领域的广泛应用. 自2007年开始, 双电层离子液体晶体管技术被广泛的应用于有机和无机材料包括过渡金属硫属化合物材料以修饰或者调控这类材料的电性质. 基于这种双电层晶体管技术, 材料的迁移率, 操作电压等被进一步改善, 绝缘-金属相变, 超导甚至是铁磁性质也被实现. 本工作将综述双电层离子液体晶体管技术对二维材料的调控性能和简要展望其今后的发展方向.     

柔性热电材料的研究进展及应用

热电材料是能够实现热能和电能直接相互转化的一类新型能源材料,在温差发电和半导体制冷两方面有重要应用。与传统热电材料相比,柔性热电材料具有形状可弯曲、重量轻和环境友好等优点,在可穿戴设备及其他柔性电子领域具有较好的应用前景。当前,如何进一步提高柔性热电材料的性能,特别是如何协同优化其柔韧性能与热电性能是研究的关键。本文结合近年的研究热点,综述了聚合物基柔性热电材料、碳基柔性热电材料和无机半导体类柔性热电材料的研究进展,详细介绍了这三类柔性热电材料的特点、性能优化以及制备方法,总结了柔性热电材料在电子、医疗和工业等领域的应用,并结合现存的一些问题和不足对柔性热电材料今后的研究方向进行了展望。     

四元化合物半导体Cu2ZnSnS4:结构、制备、应用及前景

四元化合物半导体铜锌锡硫(Cu₂ ZnSnS₄,CZTS)由于其四种组成元素在地壳中丰度非常高且安全无毒,因而成本低廉。CZTS作为直接带隙半导体材料,其吸收光谱与太阳辐射光谱匹配性好、光吸收系数高,具有结构与性质可调可控、光电性能优异等优势,是发展绿色、低成本、高效率和稳定薄膜太阳电池的理想核心材料。近年来,国内外研究者对CZTS的结构与性质、制备工艺、应用尤其是通过结构、成分的调控提高其光电转换效率等方面进行了广泛的研究和探讨。本文对CZTS的结构演变、制备工艺、光电性质与应用等进行综述,重点分析了晶体结构、缺陷、表面与界面、合金化等因素对其光伏性能的影响。同时,对CZTS作为新型能量转换材料在光催化和热电等领域的应用进行了探讨。最后对CZTS目前存在的挑战和今后的研究重点进行总结并展望了将来可能的突破方向。     

Ⅳ-Ⅵ族低维半导体材料与器件研究进展

二维Ⅳ族金属硫属化合物作为二维层状材料的重要组成部分,由于其晶格结构具有较低的对称性且与核心半导体工艺具有很好的兼容性,在电学、光学、磁性等方面具有优异的性能,并且在地球上资源丰富且具有低成本、环保的特性,因此在光电器件领域具有很大的应用潜力.基于本课题组近年来的研究进展,本文首先介绍了二维Ⅳ族金属硫属化合物及相关异质...     

具有方石英拓扑结构的微孔硫代锗锌酸盐的溶剂热合成与表征

微孔化合物是一类重要的材料,广泛地应用于催化、吸附及分离等领域。目前已知的微孔材料绝大多数为无机氧化物或氟氧化物,20世纪80年代末,Bedard等首先报道了微孔硫属化物的合成．这类化合物除具有微孔材料的性质外,还具有半导体性质,在电催化、光催化、太阳能电池及新型光电子材料如量子点(dots)及反量子点(antidots)材料方面有着广泛的应用前景,     

石墨烯在复合热电材料中的应用

热电材料是一种可以实现热能与电能之间直接相互转换的功能材料,在温差发电和热电制冷方面具有广阔的应用空间。石墨烯是一种单原子层厚度的二维碳材料,具有特殊的晶体结构和优异的物理化学性质。大量研究表明石墨烯优异的电学性能、超大的比表面积以及多样的边界结构有利于材料电、热性能的协同调控,使其在热电领域有较大的应用潜力。本文结合热电材料的性能特点,从石墨烯的结构与性能入手,综述了石墨烯自身作为热电材料时结构与性能的优化关系,并总结归纳了石墨烯与Bi₂Te₃、CoSb₃等传统无机热电材料以及与导电高分子热电材料构成纳米复合块体和薄膜时,对材料结构与热电性能的影响,并结合现存的问题对石墨烯在热电领域中的应用进行了展望。     

二维半导体合金的制备、结构和性质

原子层厚度的二维半导体材料因具有特殊的低维效应而被广泛研究. 面向光电器件应用, 需要可控调节二维半导体材料的能带结构, 包括带隙、价带/导带位置等. 合金方法是一种调控半导体能带的通用方法. 本综述介绍了近几年来二维半导体合金材料的研究进展, 包括材料的热力学稳定性、可控制备、结构表征和性质研究. 介绍的材料体系是过渡金属二硫族化物的单层合金材料, 金属元素主要是第六副族的Mo和W, 硫族元素主要是S和Se.     

准二维金属硫属化合物类石墨烯结构的化学合成与组装

无机类石墨烯属于准二维纳米结构体系,因其具有比纯碳石墨烯本身更多的调控参数,比如带隙类型及其带隙宽度可调节等,在电子器件构筑和能量转化存储等领域有着重要的科学意义和广阔的应用前景．近年来,具有准二维特征的金属硫属化合物（metalchalcogenides,MCs）作为类石墨烯结构的重要材料体系受到了广泛关注．本文概述了近年来金属硫属化合物类石墨烯结构的化学制备方法及其可能的组装应用,提出了通过系列方法影响层间作用力及利用晶体各向异性等材料设计与合成策略来实现类石墨烯的化学合成,并展望了类石墨烯的组装结构在能量存储与智能传感领域的应用前景．     

二硫化钼二维原子晶体化学掺杂研究进展

以二硫化钼（MoS₂）为代表的半导体二维过渡金属硫族化合物（TMDCs）具有优异的光电特性,在新型电子器件领域展示出广阔的应用前景。二维MoS₂的性能调控与功能协同是实现其在电子器件领域实用化的关键。化学掺杂是调控二维MoS₂的性能并丰富其材料特性最为直接而有效的方法之一。本文重点介绍了基于表面电荷转移、面内取代以及层间插层策略的掺杂方法,讨论了各种掺杂方法的基本原理、最新进展以及局限性,最后展望了二维MoS₂掺杂研究面临的挑战与发展方向。     

Thermoelectric Converters Based on Ionic Conductors

Thermoelectric materials represent a new paradigm for harvesting low-grade heat, which would otherwise be dissipated to the environment uselessly. Relative to conventional thermoelectric materials generally composed of semiconductors or semi-metals, ionic thermoelectric materials are rising as an alternative choice which exhibit higher Seebeck coefficient and lower thermal conductivity. The ionic thermoelectric materials own a completely different thermoelectric conversion mechanism, in which the ions do not enter the electrode but rearrange on the electrode surface to generate a voltage difference between the hot and cold electrodes. This unique character has inspired worldwide interests on the design of ionic-type thermoelectric converters with attractive advantages of high flexibility, low cost, limited environmental pollution, and self-healing capability. Referring to the categories of ionic thermoelectric conversion, some representative ionic thermoelectric materials with their respective characteristics are summarized in this minireview. In addition, examples of applying ionic thermoelectric materials in supercapacitors, wearable devices, and fire warning system are also discussed. Insight into the challenges for the further development of ionic thermoelectric materials is finally provided.     

Basic principles for rational design of high-performance nanostructured silicon-based thermoelectric materials

Recently, nanostructured silicon-based thermoelectric materials have drawn great attention owing to their excellent thermoelectric performance in the temperature range around 450 °C, which is eminently applicable for concentrated solar thermal technology. In this work, a unified nanothermodynamic model is developed to investigate the predominant factors that determine the lattice thermal conductivity of nanocrystalline, nanoporous, and nanostructured bulk Si. A systematic study shows that the thermoelectric performance of these materials can be substantially enhanced by the following three basic principles: 1) artificial manipulation and optimization of roughness with surface/interface patterning/engineering; 2) grain-size reduction with innovative fabrication techniques in a controllable fashion; and 3) optimization of material parameters, such as bulk solid-vapor transition entropy, bulk vibrational entropy, dimensionality, and porosity, to decrease the lattice thermal conductivity. These principles may be used to rationally design novel nanostructured Si-based thermoelectric materials for renewable energy applications.     

New and Old Concepts in Thermoelectric Materials

Herein we cover the key concepts in the field of thermoelectric materials research, present the current understanding, and show the latest developments. Current research is aimed at increasing the thermoelectric figure of merit (ZT) by maximizing the power factor and/or minimizing the thermal conductivity. Attempts at maximizing the power factor include the development of new materials, optimization of existing materials by doping, and the exploration of nanoscale materials. The minimization of the thermal conductivity can come through solid‐solution alloying, use of materials with intrinsically low thermal conductivity, and nanostructuring. Herein we describe the most promising bulk materials with emphasis on results from the last decade. Single‐phase bulk materials are discussed in terms of chemistry, crystal structure, physical properties, and optimization of thermoelectric performance. The new opportunities for enhanced performance bulk nanostructured composite materials are examined and a look into the not so distant future is attempted.     

Sur les phases de type clathrate du silicium et des éléments apparentés (C, Ge, Sn) : Une approche historique

Clathrate-type phases of silicon and related elements (C, Ge, Sn). This review article relates the history and the recent development of clathrate-type compounds of silicon and related elements (carbon, germanium, tin). Their cage-like structures are identical to those of the gas and liquid hydrates, as well as the silica-based clathrasils. Long time considered as simple crystallographic curiosities, their interest was drastically increased after the discovery of the fullerene forms of carbon. From that time they have been intensively studied for their interesting properties in so various topics as superconducting materials, wide gap semiconductors, super-hard and thermoelectric materials.     

Dibenzothiophene Sulfone-Based Ambipolar-Transporting Blue-Emissive Organic Semiconductors Towards Simple-Structured Organic Light-Emitting Transistors

The development of blue-emissive ambipolar organic semiconductor is an arduous target due to the large energy gap, but is an indispensable part for electroluminescent device, especially for the transformative display technology of simple-structured organic light-emitting transistor (SS-OLET). Herein, we designed and synthesized two new dibenzothiophene sulfone-based high mobility blue-emissive organic semiconductors (DNaDBSOs), which demonstrate superior optical property with solid-state photoluminescent quantum yield of 46–67 % and typical ambipolar-transporting properties in SS-OLETs with symmetric gold electrodes. Comprehensive experimental and theoretical characterizations reveal the natural of ambipolar property for such blue-emissive DNaDBSOs-based materials is ascribed to a synergistic effect on lowering LUMO level and reduced electron injection barrier induced by the interfacial dipoles effect on gold electrodes due to the incorporation of appropriate DBSO unit. Finally, efficient electroluminescence properties with high-quality blue emission (CIE (0.179, 0.119)) and a narrow full-width at half-maximum of 48 nm are achieved for DNaDBSO-based SS-OLET, showing good spatial control of the recombination zone in conducting channel. This work provides a new avenue for designing ambipolar emissive organic semiconductors by incorporating the synergistic effect of energy level regulation and molecular-metal interaction, which would advance the development of superior optoelectronic materials and their high-density integrated optoelectronic devices and circuits.     

High performance Na-doped PbTe-PbS thermoelectric materials: electronic density of states modification and shape-controlled nanostructures

Thermoelectric heat-to-power generation is an attractive option for robust and environmentally friendly renewable energy production. Historically, the performance of thermoelectric materials has been limited by low efficiencies, related to the thermoelectric figure-of-merit ZT. Nanostructuring thermoelectric materials have shown to enhance ZT primarily via increasing phonon scattering, beneficially reducing lattice thermal conductivity. Conversely, density-of-states (DOS) engineering has also enhanced electronic transport properties. However, successfully joining the two approaches has proved elusive. Herein, we report a thermoelectric materials system whereby we can control both nanostructure formations to effectively reduce thermal conductivity, while concurrently modifying the electronic structure to significantly enhance thermoelectric power factor. We report that the thermoelectric system PbTe-PbS 12% doped with 2% Na produces shape-controlled cubic PbS nanostructures, which help reduce lattice thermal conductivity, while altering the solubility of PbS within the PbTe matrix beneficially modifies the DOS that allow for enhancements in thermoelectric power factor. These concomitant and synergistic effects result in a maximum ZT for 2% Na-doped PbTe-PbS 12% of 1.8 at 800 K.     

Recent Progress on Addressing the Key Challenges in Organic Thermoelectrics

Compared with inorganic thermoelectric materials, organic thermoelectric (OTE) materials have attracted increasing attention due to their advantages of low toxicity, high mechanical flexibility, and large-scale solution processability. In the past few years, OTE materials have made remarkable progress in terms of their design, synthesis, and device performance. However, some challenges remain, including the low doping efficiency in n-type materials, poor doping stability with molecular dopants, and the largely reduced Seebeck coefficient after heavily doping, etc. All these factors hinder the further development of OTEs for commercial applications. In this Minireview, we highlight several key challenges during the development of OTEs and summarize recent understandings and efforts to address these challenges.     

All-in-one: a new approach toward robust and solution-processable copper halide hybrid semiconductors by integrating covalent,coordinate and ionic bonds in their structures

Conventional inorganic semiconductors are best known for their superior physical properties and chemical robustness, and their widespread use in optoelectronic devices. However, implementation of these materials in many other applications has been hindered by their poor solubility and/or solution-processability, a longstanding drawback that is largely responsible for issues such as high cost. While recent progress on hybrid perovskites, an important class of inorganic–organic hybrid materials, has shed light on the development of high-performance solution processable semiconductors, they rely heavily on toxic metals and generally suffer from framework instability. To address these issues, a new group of hybrid semiconductors based on anionic copper(i) halide and cationic organic ligands has been developed. These compounds are noted as All-In-One (AIO) structures as they consist of covalently bonded anionic CuX inorganic modules that form both coordinate and ionic bonds with cationic organic ligands. Studies demonstrate that framework stability and solution processibility of these materials are greatly enhanced as a result of such bonds. In the perspective, we highlight the development of this newly emerged type of materials including their crystal structures, chemical and physical properties and possible applications. The untapped potential that the AIO approach can offer for other hybrid families is also discussed.

This Perspective features the newly emerged AIO-type Cu(i)X-based hybrid semiconductors and showcases their structural diversity, solution-processability, framework stability, important photophysical properties and related potential applications.     

导电高分子及其纳米复合材料的热电性质

与无机热电材料相比, 有机热电材料具有资源丰富、 成本低、 质量轻、 柔韧性好及热导率低等优点, 成为热电研究领域关注的热点. 理论和实验结果表明, 低维化和小尺度化是热电材料研究和开发的发展方向. 本文对低维有机热电材料的合成、 器件组装及热电性质的影响因素等进行简要评述, 并对低维有机热电材料的研究方向进行了讨论.