Ageing and thermal degradation of plasma polymerised thin films derived from Lavandula angustifolia essential oil

The ageing and thermal degradation of polymer thin films derived from the essential oil of Lavandula angustifolia (LA) fabricated using plasma polymerisation were investigated. Spectroscopic ellipsometry and Fourier transform infrared (FTIR) spectroscopy were employed to monitor the optical parameters, thickness and chemical structure of the polyLA films fabricated at various RF powers over a period of 1400 h. The bulk of the degradation under ambient conditions was found to occur within the first 100 h after fabrication. The thermal degradation of the polyLA films was also investigated using the ellipsometry and FTIR. An increase in thermal stability was found for films fabricated at increased RF power levels. Between 200 and 300 °C, the properties indicate that a phase change occurs in the material. Samples annealed up to 405 °C demonstrated minimal residue, with retention ranging between 0.47 and 2.2%. A tuneable degradation onset temperature and minimal residue post-anneal demonstrate that the polyLA films are excellent candidates for sacrificial material in air gap fabrication.     

Thermal stability of plasma deposited polysilanes

A new method for studying thermal stability and concomitant chemical composition changes on thermal treatment of thin polymeric films is presented. It is applied to the study of thermal properties and modification of properties of polysilane-like materials with variable dimensionality prepared by radio frequency plasma enhanced chemical vapour deposition (CVD). Structure and microphysical properties of these materials, modified by progressive annealing, are examined by fluorimetry, FTIR absorption spectroscopy and XPS. In addition, the role, bonding conditions and structural environments of organic moieties as well as their influence on thermal degradation processes are examined. It is found that plasma polysilanes undergo three consecutive thermal degradation processes: Si-Si bond cleavage, elimination of side groups and final carbide formation. Presence of disorder and crosslinking stabilises the plasmatic material in comparison to classically prepared polysilanes. Nanostructural units in low dimensional polysilanes enable the peak of the luminescence to be adjusted in the spectral range from near UV (360 nm) to red (600 nm).     

Deposition of Polyacrylic Acid Films by Means of an Atmospheric Pressure Dielectric Barrier Discharge

The present work describes the plasma polymerisation of acrylic acid at atmospheric pressure. The influence of two operating parameters (monomer concentration and discharge power) on the properties of the deposited films is investigated. Results show that at a monomer concentration of 2.5 ppm and a discharge power of 9.5 W, the monomer is only slightly fragmented leading to a high amount of carboxylic acid groups on the deposited films. In contrast, when monomer concentration is decreased or discharge power increased, the incidence of monomer fragmentation processes is higher, leading to a lower amount of carboxylic acid groups on the films. This behaviour can be explained by a higher energy amount available per monomer molecule at low monomer concentrations and high discharge powers and a higher flux of positive ions attacking the surface at high discharge powers. Taking into account these results, it can be concluded that the deposition parameters should be carefully selected in order to preserve the stability of the monomer and thus obtain coatings with high carboxylic acid densities.     

Thermal and environmental stability of poly(4-ethynyl-p-xylylene-co-p-xylylene) thin films

The aim of this paper was to test the thermal and environmental stability of poly(4-ethynyl-p-xylyleneco-p-xylylene) thin films prepared by chemical vapor deposition(CVD) and to optimize the reaction conditions of the polymer.Fourier transformed infrared spectroscopy(FTIR),thermogravimetric analysis(TGA) and fluorescence microscopy were employed to investigate the stability of the reactive polymer coatings in various environmental conditions.Chemical reactivity of the thin films were then tested by Huisgen 1,3-dipolar cycloaddition reaction(‘‘click' reaction).The alkyne functional groups on poly(4-ethynyl-p-xylylene-co-p-xylylene) thin films were found to be stable under ambient storage conditions and thermally stable up to 100 8C when annealed at 0.08 Torr in argon.We also optimized the click reaction conditions of azide-functionalized molecules with poly(4-ethynyl-p-xylylene-co-p-xylylene).The best reaction result was achieved,when copper concentration was 0.5 mmol/L,sodium ascorbate concentration to copper concentration was 5:1.In contrast,the azide concentration and temperature had no obvious effect on the surface reaction.     

Mechanical behaviour of biodegradable agricultural films under real field conditions

The mechanical behaviour of various types of biodegradable materials depends on their chemical composition and additives, the processing characteristics and the application conditions. The environmental conditions during storage and usage of these materials strongly influence their mechanical properties and behaviour. Ageing and degradation during the useful lifetime of biodegradable agricultural films causes losses in the mechanical performance of the material, as measured by monitoring the evolution of some of the critical mechanical properties. Such losses may be comparable to the corresponding losses of the conventional polyethylene agricultural films due to ageing, or they may be more drastic. In the present paper, the overall mechanical and ageing/degradation behaviour of experimental specially designed and manufactured low-tunnel and mulching biodegradable films, exposed to full-scale field conditions is analysed. Selected critical mechanical properties of these films manufactured with different grades of Mater-Bi material and additives, different thickness and processing schemes and exposed to real cultivation conditions in four different locations in Europe are investigated in the laboratory and compared against the corresponding behaviour of conventional agricultural films at various stages of their exposure time.     

The effect of different gas atmospheres on the structure,morphology and photoluminescence properties of pulsed laser deposited Y3(Al,Ga)5O12:Ce3+ nano thin films

Luminescent properties of Y₃(Al,Ga)₅O₁₂:Ce³⁺ phosphor powder and thin films were obtained. The phosphor powder was used as target material for Pulsed Laser Deposition (PLD) of the thin films in the presence of different background gases. Excitation peaks for the powder were obtained at 439, 349, 225 and 189 nm and emission peaks at 512 and 565 nm. X-ray diffraction indicated that better crystallization took place for films deposited in a 20 mTorr O₂ atmosphere. Atomic force microscope revealed an RMS value of 0.7 nm, 2.5 nm and 4.8 nm for the films deposited in vacuum, O₂ and Ar atmospheres, respectively. The highest PL intensity was observed for films deposited in the O₂ atmosphere. A slight shift in the wavelength of the PL spectra was obtained for the thin films due to a change in the crystal field. The thickness of the films varied from 120 nm to 270 nm with films deposited in vacuum having the thin layer and those in Ar having the thick layer. The stoichiometry of the powder was maintained in the film during the deposition as confirmed by Rutherford backscattering spectroscopy.     

Optical constants,dispersion energy parameters and dielectric properties of ultra-smooth nanocrystalline BiVO4 thin films prepared by rf-magnetron sputtering

BiVO₄ thin films have been prepared through radio frequency (rf) magnetron sputtering of a pre-fabricated BiVO₄ target on ITO coated glass (ITO-glass) substrate and bare glass substrates. BiVO₄ target material was prepared through solid-state reaction method by heating Bi₂O₃ and V₂O₅ mixture at 800 °C for 8 h. The films were characterized by X-ray diffraction, UV–Vis spectroscopy, LCR meter, field emission scanning electron microscopy, transmission electron microscopy and atomic force microscopy. BiVO₄ thin films deposited on the ITO-glass substrate are much smoother compared to the thin films prepared on bare glass substrate. The rms surface roughness calculated from the AFM images comes out to be 0.74 nm and 4.2 nm for the films deposited on the ITO-glass substrate and bare glass substrate for the deposition time 150 min respectively. Optical constants and energy dispersion parameters of these extra-smooth BiVO₄ thin films have been investigated in detail. Dielectric properties of the BiVO₄ thin films on ITO-glass substrate were also investigated. The frequency dependence of dielectric constant of the BiVO₄ thin films has been measured in the frequency range from 20 Hz to 2 MHz. It was found that the dielectric constant increased from 145 to 343 at 20 Hz as the film thickness increased from 90 nm to 145 nm (deposition time increased from 60 min to 150 min). It shows higher dielectric constant compared to the literature value of BiVO₄.     

Carbon-metal (Ni or Ti) nanocomposite thin films for functional applications

A comparison between structure and mechanical properties of dc sputtered C–Ni and C–Ti nanocomposite thin films has been made in the growth temperature range of 25–800 °C. C–Ni films undergo morphological and phase change at 400 °C deposition temperature, while the C–Ti films possess the same phase state and morphological character in the whole range of deposition temperatures. Despite the structural differences the dependence of hardness (H) and elastic modulus (E) on the deposition temperature shows very similar behavior. The same character of the hardness and modulus curves is mostly influenced by the structure and the morphology of the carbon matrix. The difference in absolute value between the H and E curves of C–Ni and C–Ti could be related to the C-metal bonds, chemical stability and mechanical properties of the corresponding carbide phase.     

Optical properties of thermally evaporated 4-(4-nitrobenzalideneamino) antipyrine Schiff base thin films

4-(4-nitrobenzalideneamino) antipyrine (NBAA) have been synthesized by refluxed ethanolic solution of 4-aminoantipyrine and p-nitrobenzaldehyde for 4 h and characterized with various physico-chemical techniques. Thin films of NBAA have been prepared by the thermal deposition technique in a vacuum of 1.5 × 10⁻⁵ mbar onto optical flat glass substrates. X-ray diffraction patterns show amorphous nature for all NBAA thin films except UV irradiated thin film which shows amorphous nature with some crystallinity but with small amount. The optical constants of thermally deposited NBAA thin film were investigated in the wavelength range 200–2500 nm. The type of optical transition near the edge of the band gap is found to be indirect allowed transition. The effect of UV irradiation as well as the effect of annealing on the optical properties of NBAA thin films was investigated. The value of the energy gap for thin films under investigation is calculated and found to be 1.56 eV for as-deposited, 1.45 eV for annealed and 1.82 eV for UV irradiation.     

CuInSe2 thin-film deposition on flexible plastic substrate: electrolyte recirculation rate and deposition potential effects

Copper indium diselenide (CuInSe₂; CIS) layer was electrolytically plated from an aqueous medium at room temperature onto electroless nickel deposited on flexible plastic (Kapton). The CIS depositions were carried out under constant deposition potentials (−0.5 to −1.1 V vs. Ag/AgCl) and at various electrolyte flow rates (0.3 to 1.5 ml/s) under constant applied current. The resulting thin films were characterized using atomic force microscopy, energy-dispersive X-ray spectroscopy, environmental scanning electron microscopy, and X-ray diffraction. The surface morphology and the atomic composition of the deposited CIS film were found to be influenced by the deposition potential under potential control and the electrolyte recirculation rate under current control. Low electrolyte flow rates under constant current control and high cathodic deposition potential under voltage control favor the deposition of indium. CIS films of uniform deposit, smoother surfaces, and with better adhesion properties are favored by moderate electrolyte recirculation rate. At a current density of 0.6 mA/cm², the electrolyte recirculation rate required to achieve ideal CIS atomic composition was found to be 1.0 ml/s in such a setting. The crystallinity of the film improved after annealing for 2 h at 390 °C under argon atmosphere.     

XRD and AFM studies of ZnS thin films produced by electrodeposition method

The structure and morphology of ZnS thin films were investigated. ZnS thin films have been grown on an indium tin oxide glass substrate by electrodeposition method using zinc chloride and sodium thiosulfate solutions at room temperature. The X-ray diffraction patterns confirm the presence of ZnS thin films. From the AFM images, grain size decreases as the cathodic potential becomes more negative (from ?1.1 to ?1.3 V) at various deposition periods. Comparison between all the samples reveals that the intensity of the peaks increased, indicating better crystalline phase for the films deposited at ?1.1 V. These films show homogeneous and uniform distribution according to AFM images. On the other hand, XRD analysis shows that the number of ZnS peaks increased as deposition time was increased from 15 to 30 min at ?1.1 V. The AFM images show thicker films to be formed at ?1.1 V indicating more favourable condition for the formation of ZnS thin films.     

Characteristics of formvar films used to prevent alpha-detector contamination

Alpha spectrometry is an extremely useful and sensitive for detection of alpha-emitting nuclides. Contamination of the silicon detectors for low-level alpha spectrometry by recoil nuclides is a serious problem in the measurement of alpha emitters decaying to daughter nuclides with short half-lives. This unwanted contamination leads to decreased measurement sensitivity causing a degradation of the limit of detection. The simplest method to prevent this radioactive contamination of detector is to use a catcher film between the alpha source and the detector. In this work we describe the obtaining of the thin formvar films as stopper foils for recoil nuclei and we investigated the influence of these films on alpha spectrometry parameters, as energy shift (~30 keV) and resolution (~7%). No significant deterioration of the alpha spectrometry parameters was observed when using thin formvar films. Using the ASTAR web databases, which calculate stopping powers for alpha particles, the thickness of formvar films was estimated to be about 5.355 × 10⁻⁵ g/cm². The measurements were performed with an ORTEC SOLOIST alpha spectrometer with PIPS detector.     

Thermal properties of tetraethylammonium tetrachloro-, bromotrichloro-and tribromochloroferrates(III)

A new synthesized 4CN type azomonoether, exhibiting dying properties, crystalline nature and generating interest as a material for non-linear optical applications was investigated. Modern devices incorporating liquid crystals tend to use thin films of such materials because of their special characteristics. Thermal stability studies are indispensable before attempting any deposition experiment. We have investigated the thermal behaviour of 4-[(4-chlorobenzyl)oxy]-4′-cyano-azobenzene (TG, DTG, DTA and DSC) in inert flow atmosphere, under non-isothermal conditions. The phase transitions were studied by repeated heating-cooling regimes, with intercalated isothermal steps. The thin films were deposited on silicon and quartz substrates by matrix assisted pulsed laser evaporation (MAPLE) using a Nd:YAG laser working at 266 nm. FTIR spectroscopy of the obtained thin films confirmed the preservation of the compound’s structure.     

Synthesis and Characterization of Nanostructured a-C:H (Hydrogenated Amorphous Carbon) Thin Films by Gaseous Thermionic Vacuum Arc (G-TVA) Deposition Technique

The aim of this contribution is to present the properties of the nanostructured hydrogenated carbon thin films and to study their growth carried out in a special deposition technique based on Thermionic Vacuum Arc method. The Gaseous Thermionic Vacuum Arc (G-TVA) technology is an original deposition method performed in a special configuration, consisting of a heated thermionic cathode which provides an electron beam on the anode. The surface free energy was evaluated by contact angle and their optical properties were studied by Filmetrics F20 spectrometry system. Structure of the film has been investigated by Raman spectroscopy as well as the mechanical properties like hardness, wear resistance, film-substrate adhesion. The films showed two distinct Raman characteristic peaks located at 1,350 cm⁻¹ (D-line) and 1,550 cm⁻¹ (G-line), broad for Si and very sharp for glass substrates. The G-TVA enables to prepare soft (hardness ~6 GPa) or hard (~24 GPa) films.     

Photochromic copolymers containing 3-indolylfulgides/indolylfulgimides: Synthesis and photochemical properties in toluene and as films

Photochromic indolylfulgimides covalently attached to polymers have beneficial properties for optical switching. A 3-indolylfulgide and two 3-indolylfulgimides with one or two polymerizable styrene groups attached on the nitrogen atom(s) were synthesized. Copolymerization with methyl methacrylate (MMA) provided linear copolymers (one styrene group) or a cross-linked copolymer (two styrene groups). The properties of the monomers and copolymers in toluene or as thin films were characterized. The new copolymers were photochromic (reversible Z-to-C isomerization), absorbed visible light, and revealed good thermal and photochemical stability. At room temperature, all copolymer films showed no loss of absorbance after 5 weeks. At 80 °C in either toluene or as films, the Z-forms copolymers were less stable than the C-form copolymers, which showed little or no degradation after 400 h. The degradation rate due to repeated ring-closing – ring opening cycles was less than 3% per 100 cycles. The cross-linked copolymer showed photochemical stability comparable to monomeric fulgides in toluene, <1% per 100 cycles. In general, the properties of the linear and cross-linked copolymers were similar to the corresponding monomers in toluene. In films, the conformations of the Z-form were restricted due to the matrix indicating that the preparation of films from the C-form is advantageous.     

Effect of Annealing on the Electrical Properties of CuxS Thin Films

Copper sulphide CuS was deposited on three substrates; glass, Indium Tin Oxide (ITO) and Ti by using spray pyrolysis deposition (SPD). After depositing CuS thin films on the substrates at 200 °C, they were annealed at 50, 100, 150, and 200 °C for 1 hour. Structural measurements revealed covellite CuS and chalcocite Cu₂S phases for thin films before and after annealing at 200 °C with changes in intensities, and only covellite CuS phase for thin films after annealing at 50, 100, and 150 °C. Morphological characteristics show hexagonal-cubic crystals for the CuS thin film deposited on glass substrate and plates structures for films deposited on ITO and Ti substrates before annealing, these crystals became bigger in size and there were be oxidation and some agglomerations in some regions with formation of plates for CuS on glass substrate after annealing at 200 °C. For Hall Effect measurements, thin films sheet resistivity and mobility increased after annealing while the carrier concentration decreased. Generally, the thin film deposited on ITO substrate had the lowest resistivity and the highest carrier concentration before and after annealing. The thin film deposited on Ti substrate had the highest mobility before and after annealing, which makes it the best thin film for device performance. The objective of this research is to show the improvement of thin films electrical properties especially the mobility after annealing those thin films.     

A study on solution deposited CuSCN thin films: Structural,electrochemical, optical properties

A cost-effective successive ionic layer adsorption and reaction (SILAR) method was used to deposit copper (I) thiocyanate (CuSCN) thin films on glass and steel substrates for this study. The deposited thin films were characterized for their structural, morphological, optical and electrochemical properties using X-ray diffraction (XRD), scanning electron microscopy (SEM), UV–visible spectroscopy and VersaSTAT potentiostat. A direct band gap of 3.88 eV and 3.6 eV with film thickness of 0.7 μm and 0.9 μm was obtained at 20 and 30 deposition cycles respectively. The band gap, microstrain, dislocation density and crystal size were observed to be thickness dependent. The specific capacitance of the CuSCN thin film electrode at 20 mV/s was 760 F g⁻¹ for deposition 20 cycles and 729 F g⁻¹ for deposition 30 cycles.     

Atomic layer deposition of crystalline molybdenum oxide thin films and phase control by post-deposition annealing

Molybdenum forms a range of oxides with different stoichiometries and crystal structures, which lead to different properties and performance in diverse applications. Herein, crystalline molybdenum oxide thin films with controlled phase composition are deposited by atomic layer deposition. The MoO₂(thd)₂ and O₃ as precursors enable well-controlled growth of uniform and conformal films at 200–275 °C. The as-deposited films are rough and, in most cases, consist of a mixture of α- and β-MoO₃ as well as an unidentified suboxide MoO_x (2.75 ≤ x ≤ 2.89) phase. The phase composition can be tuned by changing deposition conditions. The film stoichiometry is close to MoO₃ and the films are relatively pure, the main impurity being hydrogen (2–7 at-%), with ≤1 at-% of carbon and nitrogen. Post-deposition annealing is studied in situ by high-temperature X-ray diffraction in air, O₂, N₂, and forming gas (10% H₂/90% N₂) atmospheres. Phase-pure films of MoO₂ and α-MoO₃ are obtained by annealing at 450 °C in forming gas and O₂, respectively. The ability to tailor the phase composition of MoO_x films deposited by scalable atomic layer deposition method represents an important step towards various applications of molybdenum oxides.     

Characterization and electrochemical deposition of natural melanin thin films

Melanin is an important class of biological pigments because of its distinct chemical and physical properties. The electrochemical deposition of natural melanin thin films was studied using two different techniques; constant potential and cyclic voltammetry along with a deposition time of five hours. The thin films deposited electrochemically on a fluorine-doped tin oxide conductive glass substrate using the constant potential method, exhibited faster growth rate and better adhesion to the fluorine-doped tin oxide working electrodes than those deposited using the cyclic voltammetry method. The thin films deposited on the fluorine-doped tin oxide conductor glass using the constant potential method were also more homogeneous than those deposited via the cyclic voltammetry technique. The increase of film thickness is related to the increase of electrochemical deposition time. Interestingly, the electrochemical deposition using the constant potential method had the advantage of consuming less electric charge. The physical and chemical structures of the melanin thin films were characterized using ultraviolet–visible absorption spectroscopy, Fourier-transform infrared spectroscopy, and X-ray diffraction analysis. The ultraviolet–visible absorption spectra showed the correlation between the variation of deposition rates of melanin and the type of electrochemical technique employed as well as the thickness of the film. The average thickness of the film is 500 nm which absorb 40% of light in both type of films. The atomic force microscopy images illustrated the homogeneous deposition of the melanin molecules on the fluorine-doped tin oxide conductive glass substrate, indicating that the thickness of the thin films can be controlled. We estimated an average grain size of 14.093 Å. The ease of preparing such thin films of organic materials can open new avenues towards the use of soft conductors, in contrast to the complex preparation of industrial semiconductors.     

How boron incorporation during Si1−xGex chemical vapor deposition degrades the Ge profile

The effect of boron incorporation during chemical vapor deposition of SiGe thin films from silane, germane, diborane, and hydrogen gas mixtures is investigated. It is shown that boron incorporation during SiGe thin-film growth degrades the Ge profile under certain growth conditions when the boron concentration is high enough (>10¹⁹ cm⁻³). In single-wafer atmospheric-pressure processes we find that no Ge concentration depression occurs at deposition temperatures above 675 °C. In multi-wafer atmospheric-pressure processes we find an increasingly occurring depression of the Ge concentration along the wafer stack, even at temperatures above 675 °C. In low-pressure processes, high-level in-situ doping of SiGe with boron is possible at temperatures as low as 550 °C without any degradation of the Ge profile. Thus LPCVD is superior to APCVD with respect to high-level in situ doping of SiGe with boron. The presence or absence of Ge profile degradation in boron-doped SiGe thin films is explained by the discussion of growth rate enhancement phenomena. Received: 15 September 1997 / Accepted: 7 November 1997