Fano-like electron–phonon interference in δ-doping GaAs superlattices

The interaction between electron excitations and LO phonons is studied by Raman scattering inδ-doping GaAs superlattices. The Raman spectra measured close to the E₀ +  Δ₀resonance of GaAs present Fano-like coupling of the LO phonons with the quasicontinuum single-particle electron excitations. Due to the self-consistent origin of the electron-energy spectrum in δ-doping superlattices the resonance of the Fano interference was found to be strongly dependent on the electron density as well as the excitation energy.     

Strong resonant intersubband magnetopolaron effect in heavily modulation-doped GaAs/AlGaAs single quantum wells at high magnetic fields

Electron cyclotron resonance (CR) has been studied in magnetic fields up to 32 T in two heavily modulation-δ-doped GaAs/Al_0.3Ga_0.7As single quantum well samples. Little effect on electron CR is observed in either sample in the region of resonance with the GaAs LO phonons. However, above the LO-phonon frequency energy E_LO at B>27 T, electron CR exhibits a strong avoided-level-crossing splitting for both samples at energies close to E_LO+(E₂−E₁), where E₂, and E₁ are the energies of the bottoms of the second and the first subbands, respectively. The energy separation between the two branches is large, reaching a minimum of about 40 cm⁻¹ around 30.5 T for both samples. This splitting is due to a three-level resonance between the second LL of the first electron subband and the lowest LL of the second subband plus an LO phonon. The large splitting in the presence of high electron densities is due to the absence of occupation (Pauli-principle) effects in the final states and weak screening for this three-level process.     

Dielectric parameterization of raman lineshapes for GaP with a plasma of charge carriers

We have studied the Raman lineshapes of several samples of GaP with appreciable carrier concentrations. There is no feature identifiable as a plasma resonance, but there are pronounced effects of interaction with the LO phonon resonance. For analysis we have developed a model along lines laid down by Barker and Loudon, employing Nyquist relations to calculate infrared fluctuations which scatter light. We introduce a response matrix α(ω) withseveral resonances; and we uncover some points which seem to be new, for coupled-mode scattering systems in general. In the GaP-plasma problem the data do not necessitate inclusion of the scattering amplitude from the plasma; we ascribe this to large plasma damping rates (ωτ≲1). This provides an account for the lack of any apparent plasma resonance in the scattering and for the modified appearance of the LO phonon, relative to the pure crystal. We emphasize that the following parameters suffice: Lorentz parameters measured in linear infrared experiments, the nonlinear parameterC from a visible-infrared mixing experiment, and the plasma frequency and damping fit to each sample. Beyond treatment of the plasma problem, the theory bears more generally on the conditions under which an LO Raman lineshape measures locally the shape of 〈E ²〉_ω. Also it bears upon the analysis of polariton linewidths to infer the variation of the phonon damping Γ(ω). This work was supported by the National Science Foundation Grant No. GH 32401. It is based on a major segment of the thesis of D.T. Hon, submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy (Physics) in the Faculty of the Graduate School of the University of Southern California.     

Resonance microwave photoresistance of a two-subband electron system at large filling factors

The microwave photoresistance of a double GaAs quantum well with two occupied size-quantization sub-bands E ₁ and E ₂ has been studied at the temperatures T = 1.6–4.2 K in the magnetic fields B < 0.5 T. The microwave photoresistance of such a system has been found to have a maximum amplitude when the maximum of the magneto-intersubband oscillations with the number k = (E ₂ − E ₁)ℏω_c coincides with the maximum or minimum of the ω/ω_c oscillations, where ω is the microwave frequency and ω_c is the cyclotron frequency. It has been shown that the resonance photoresistance that appears in the kth maximum of the magneto-intersubband oscillations is determined by the condition ℏω/(E ₂ − E ₁) = (j ± 0.2)/k, where k and j are positive integers.     

Raman scattering by two LO-phonons near Γ in GaAs

Near resonance the second order phonon spectra of semiconductors exhibit peaks which correspond to 2 LO phonons with wave-vector $\text{q}\text{→}\text{?o}$ (2 LO(Γ)). The frequencies of these 2 LO(Γ)-peaks are studied for photon energies varying across the E_o + Δ_o gap of GaAs. These peaks are shown to be slightly shifted to lower frequencies compared with the exact 2 LO(Γ) frequency. The peak positions when plotted as a function of the incident photon energy display an oscillatory behaviour which corresponds to the fact that LO-phonons of different wave vectors are created in the Raman process as the photon energy is tuned across the E_o+Δ_o resonance.     

InGaN薄膜的紫外共振喇曼散射

利用325nm紫外光激发,对不同组分的In_xGa_1-xN薄膜的喇曼散射谱进行了研究.在光子能量大于带隙的情况下,观察到显著增强的二阶A₁(LO)声子散射峰.二阶LO声子峰都从一阶LO声子的二倍处向高能方向移动,移动量随样品In组分的增加而增大,认为是带内Frhlich相互作用决定的多共振效应引起的.分析了一阶LO声子散射频率和峰型与In组分的关系.在喇曼谱中观察到样品存在相分离现象,并与X射线衍射的实验结果进行 关键词： xGa_1-xN合金')" href="#">In_xGa_1-xN合金 紫外共振喇曼散射 二阶声子 相分离     

Zero differential resistance in a double quantum well at high filling factors

The differential resistance r _xx in a GaAs double quantum well with two occupied size-quantization subbands have been studied at temperatures T = 1.6–4.2 K in magnetic fields B < 0.5 T. It has been found that differential resistance r _xx vanishes at the maxima of magneto-intersubband oscillations with an increase in the direct current I _dc. It has been shown that the discovered r _xx ≈ 0 state appears under the condition 2R _c E _H/ħω_c < 1/2, where R _c is the cyclotron radius of electrons at the Fermi level, E _H is the Hall electric field induced by the current I _dc, and ω_c is the cyclotron frequency.     

Magneto-intersubband zener tunneling in a wide GaAs quantum well at high filling factors

The dependence of the differential resistance r _xx on the dc current density J _dc in a wide GaAs quantum well with two occupied size quantization subbands has been investigated at the temperature T = 4.2 K in the magnetic fields B < 1 T. A peak, whose position is given by the relation 2R _c eE _H = ħω_c/2, where R _c is the cyclotron radius, E _H is the Hall electric field, and ω_c is the cyclotron frequency, has been observed in the r _xx (J _dc) curves at high filling factors. The experimental results are attributed to Zener tunneling of electrons between the Landau levels of different subbands.     

Level density and shape changes in excited sd shell nuclei

In the present calculation we have used the Monte Carlo method of generating collective spin and total energy of the nucleus for various configurations of the system with N ₀ single particle states available for n number of particles. The different configurations (arrangements of occupied single particle states) leading to a particular energy E and spin J are then collected to get the density of states for the given energy E and spin J. We find that if we use the cranked Nilsson model single particle states for the rotational frequency Ω = 0.0ħω, 0.05ħω and 0.1ħω there is a shift in the maximum density of states W _max with a tendency for the system to become more oblate or prolate depending on the shift in the maximum density of states as the angular momentum decreases or increases. The change in nuclear level density with collectivity, i.e. with the use of cranked Nilsson model single particle levels has been noticed.      

Coherent phonon and electron spectroscopy on surfaces using time-resolved second-harmonic generation

pump (ω)E_probe ^*(ω)|E_probe(ω)|². This is much easier to detect than transient grating, photon echo, or four-wave mixing schemes that use higher-order nonlinearities. We have applied this technique to measure the energy gap and dephasing time of the dangling bond interband transition on the GaAs(110)-relaxed (1×1) surface. Surface-carrier/surface-phonon interaction plays an important and perhaps dominant role in surface carrier dephasing consistent with the larger electron-phonon coupling on the surface compared to the bulk. Received: 13 October 1998     

Resonance Raman scattering in InAs near the E1 gap

Measurements of resonance Raman scattering in InAs at 77°K near the E₁ gap have been extended to 2.73 eV. The peak in the resonance curve appears at about 2.66 eV, 70 meV above the optical gap, and gives a larger temperature shift of the resonance than previously reported. Resonance lineshapes are obtained for allowed TO and LO and for forbidden LO phonon scattering. The forbidden scattering intensities are consistent with selection rules predicted for linear q-dependent and/or surface electric field induced scattering mechanisms.     

Analytic solution of the BCS gap equation inD dimensions (D=1, 2, 3), at finite temperatures

The Bardeen-Cooper-Schrieffer (BCS) gap equation is solved analytically in one, two and three dimensions, for temperatures close to zero andT _c. We work in the weak coupling limit, but allow the interaction widthν≡ħω _m/E _F to lie in the interval (0, ∞) Here,ħω _m is the maximum energy of a force-mediating boson, andE _F denotes the Fermi energy. We obtain expressions forT _c and ΔC, the jump in the electronic specific heat acrossT=T _c, in the limitsν≪1 (the usual phonon pairing) andν>1 (non-phononic pairing). This enables us to see howT _c scales with the mediating boson cut off. Our results predict a larger jump in the specific heat for the caseν>1, compared toν≪1. We also briefly touch upon the role of a van Hove singularity in the density of states.     

Micro‐Raman analysis of GaAs Schottky barrier solar cell

Gallium arsenide (GaAs) cells have been in the race with silicon single‐crystal cells for the highest efficiency photovoltaic devices. The annealed, irradiated Schottky barrier (SB) solar cells were characterised using micro‐Raman spectroscopy at three different regions: namely, at the (1) ohmic contact region, (2) unirradiated region and (3) irradiated region. We also present a micro‐Raman study of the damage process in annealed GaAs SB solar cells bombarded by high‐energy ions. A Gaussian line shape was fitted to the Raman spectra of the longitudinal optical phonon A₁(LO), and parameters such as intensity, full width at half maximum (FWHM) and the area under the peak were obtained for the different annealing temperatures. Biaxial stress (σ), carrier concentration (n), depletion length (L_d), dislocation velocity (ν) and life time of the first‐order optical phonon (τ) of the A₁(LO) mode of the irradiated region of the samples annealed at different temperatures were calculated. Copyright © 2010 John Wiley & Sons, Ltd.     

Ellipsometric spectroscopy of the ZnO nonpolar(1\bar 100) surface

Ellipsometric spectroscopy has been performed on nonpolar ZnO surfaces in the spectral range 1.5 eV<ħω<4.0 eV. Absolute measurements with two different crystal orientations in air allow the determination of the optical constantsn _∥,k _∥ andn _⊥,k _⊥ for light polarized parallel and perpendicular to thec-axis. The ellipsometric angles Δ and ψ are changed remarkably on ultrahigh vacuum cleaved surfaces near the band gap energy of ∼3.4eV when oxygen or atomic hydrogen is adsorbed or when the crystal is annealed. This observation is interpreted in terms of a field effect on the optical constants in the space charge layer.     

Comparative Analysis of Temperature-dependent .Raman Spectra of GaN and GaN/Mg Films

The Raman spectra of unintentionally doped gallium nitride (GaN) and Mg-doped GaN films were investigated and compared at room temperature and low temperature. The differences of E₂ and A₁(LO) mode in two samples are discussed. Stress relaxation is observed in Mg-doped GaN, and it is suggested that Mg-induced misfit dislocation and electron–phonon interaction are the possible origins. A peak at 247 cm⁻¹ is observed in both the Raman spectra of GaN and Mg-doped GaN. Temperature-dependent Raman scattering experiment of Mg-doped GaN shows the frequency and intensity changes of this peak with temperature. This peak is attributed to the defect-induced vibrational mode. Translated from Chinese Journal of Semiconductors, 2005, 26(4) (in Chinese)     

Temperature-dependent polarization of resonance Raman scattering in CdS

Temperature-dependent polarization of the 4658 Å—3LO Raman line was studied together with that of the 4727 Å—2LO Raman line in resonance Raman scattering (RRS) in CdS. Temperature-dependent polarization is strongly related to the A-exciton in CdS as a resonant intermediate state. Experimental results are well understood when RRS around the A-exciton is considered as the inelastic scattering of exciton—polaritons by LO phonons.     

Resonant Raman scattering at higher M0 exciton edge in layer compound InSe

Resonant Raman spectra of γ-rich InSe have been measured at the absorption peak, E'₁, which lies 1.2 eV above the lowest direct gap. The resonance behaviors observed indicate that the E'₁ peak is due to the formation of damped M₀ excitons.     

Exciton transitions in photoluminescence spectra of AIAs/GaAs superlattices

Conclusions The studies performed here have shown that the superlattice samples studied exhibit photoluminescence spectra which agree with the Kronig-Penney model, although in calculating the energies of the radiative transitions it is necessary to take into account the binding energy of the excitons,E _B. Due to the exciton—phonon interaction, the 1HH peak breaks up on the long wavelength side into a Poisson distribution. The energy of the LO phonon so determined is 34 meV. Bands due toD ⁰-A ⁰ andD ⁰X transitions, caused by remaining low-level impurities in the GaAs crystals are also observed. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 61, Nos. 3–4, pp. 241–245, September–October, 1994.     

Spectral behaviour of the two-photon absorption coefficient in ZnO,CuCl and Bi4Ge3O12

Summary The spectral behaviour of the direct interband two-photon absorption coefficient α⁽²⁾ in ZnO, CuCl and Bi₄Ge₃O₁₂ has been investigated in a large excitation energy range. The experimental results have shown that the α⁽²⁾ spectral behaviour is well described by a parametric formula containing terms with different energy dependence. In particular, for 2ħω-E _g>≈400 meV, the first experimental evidence of 2ħω-E _g)^5/2 dependence has been obtained. As a consequence, each of the various models proposed to predict the α⁽²⁾ dispersion curve gives the correct energy dependence in a limited energy range, due to the poor approximation made in the evaluation of dipole matrix elements. To explain the spectral dependence of the two-photon absorption coefficient, consideration of all the intermediate states is required, with the energy dependence of the dipole matrix elements properly considered. It is shown that the greatest contributions to the oscillator strength come from transitions totally allowed at the critical points. Work partially supported by M.P.I.     

Modified excitonic resonances in GaAs/AlAs multiple quantum well heterostructures with ultrathin barriers

Excitonic resonance structures in GaAs/AlAs multiple quantum well heterostructures with varying barrier-layer thicknessesL _B down to 1.3 nm are investigated for two sets of samples with the nominal well widths ofL _Z =9.2 and 6.4 nm, by 2K photoluminescence excitation spectroscopy. The observed resonance energies of then=1 heavyhole (1 hh) and light-hole (1 lh) free excitons imply that quantum confinement effects persist at least down to the decreased barrier-layer thickness ofL _B =1.3 nm. This result is inconsistent with the red shifts expected from the simple well-coupling theory within the one-band Kronig-Penney model at the point. Instead, blue shifts of 6–8 meV (8–17 meV) are observed for the 1 hh (1 lh) excitonic resonance peaks whenL _B is decreased from 10 to 2 nm. A relative decrease of the oscillator strength of the 1 lh transition compared to the 1 hh transition is also observed asL _B is decreased. These results manifest important effects of the indirect-gap barrier material for the actual wavefunction matching across the interface and the breakdown of the envelope function approach to GaAs/AlAs quantum well heterostructures with ultrathin barriers.