双光折变晶体半线性相位共轭器的自脉动

在由两块光折变BaTiO3晶体(其中一块晶体为全内反射式自抽运相位共轭镜工作方式,起外反射镜作用)构成的半线性自抽运相位共轭器中观察到了相位共轭光的自脉动现象。自脉动的平均频率f与入射光功率I0的关系为f∝I01.43;相位共轭光的平均维持时间ΔT与入射光功率I0近似成反比。观察到光折变BaTiO3晶体中扇形散射光具有动态的空间结构,扇形散射光的这种特性是引起上述半线性自抽运相位共轭器中相位共轭光脉动的原因     

室温下压致铁钴镍合金的bcc→hcp相变

 本文采用高压X光衍射方法在金刚石对顶压砧中在位地（in situ）研究了Fe₆₈Co₂₄Ni₈（wt%）合金在室温下的压致bcc→hcp结构相变和直到40.5 GPa的等温压缩行为。实验结果表明该合金在常压下为bcc结构，晶格常数a₀=(0.287 0±0.000 1) nm，体积V₀=(7.119±0.007) cm³/mol，密度ρ₀=(7.981±0.008) g/cm³；在20.9 GPa附近出现bcc→hcp结构相变，两相共存压力区约10 GPa，在此区域内有晶面间距d(002)_hcp=d(110)_bcc，且原子平面(002)_hcp//(110)_bcc，hcp相比bcc相体积减小(0.33±0.02) cm³/mol；高压相hcp结构的晶格参数比值c/a=1.608±0.004；相变后原子配位数的增加使得hcp相(002)平面内及(002)平面间的最近邻原子间距比bcc相最近邻原子间距分别增大约1.6%和0.5%；用Murnaghan状态方程对实验数据进行最小二乘法拟合，得到bcc相B₀=(130±13) GPa，B₀'=12.6±0.5；hcp相V₀=(6.62±0.04) cm³/mol，B₀=(243±21) GPa，B₀'=6.8±0.3；对于该合金的bcc→fcp相变时的结构转变机制做了详细的讨论。     

Wavelength-stable, narrow-spectral-width oscillation of an AlGaInP diode laser coupled to a BaTiO3:Co stimulated photorefractive backscattering phase conjugator

3 ) stimulated photorefractive backscattering (SPBS) phase conjugator. The SPBS process was successfully achieved by the combination of the short-wavelength diode laser and the highly doped photorefractive BaTiO₃:Co crystal. The spectral width of the diode laser is reduced to 7.2 pm because of the narrow spectral bandwidth of the gratings [with wave number of K=2k(2k gratings)] formed in the SPBS phase conjugator, compared with the transmission grating formed in the conventional cat conjugator, which was used previously. The SPBS phase conjugator was successfully used to suppress self-frequency scanning, and wavelength-stable oscillation of the SPBS phase-conjugator-coupled diode laser was achieved. Received: 4 November 1996/Revised version: 12 February 1997     

Polarized Micro-Raman Study of the Temperature-Induced Phase Transition In 0.67 Pb（Mg1/3Nb2/3）O3-0.33PbTiO3

Polarized Raman spectra of ferroelectric relaxor 0.67Pb（Mg1/3Nb2/3）O3-0.33PbTiO3 （0.67PMN-0.33PT） single crystal are systematically investigated in a wide temperature range from -196 to 600℃ by micro-Raman scattering technique. The results clearly reveal that there are two structural phase transitions in such composite ferroelectric relaxor： the rhombohedral-tetragonal （R- T） phase transition and the tetragonal-cubic （T- C） phase transition. The former occurs at about TR-T =34℃, corresponding to the vanishing of the soft A1 mode at 106cm^-1 recorded in the parallel polarization. The latter appears at about TT-C = 144℃, which can be verified with the vanishing of mode at 780cm^-1 measured in the crossed polarization.     

Comments on Shakir's “zero-area optical pulse processing by degenerate four-wave mixing”

We disagree with one of the contentions of Shakir's paper, namely that a zero-area pulse can be generated by an unstable phase conjugator. We find, on the contrary, that any unstable conjugator would, if the pumps were not depleted, generate a conjugate wave of infinite area. We show by counterexample that the response generated by Shakir's technique is noncausal if the conjugator is unstable.     

Incident-angle dependence of the phase conjugate reflectivity by nonlinear piezoelectric interaction in PZT ceramics.

The reflectivity of an acoustic phase conjugator by nonlinear piezoelectric interaction in PZT ceramics was measured as a function of the incident angle. The phase conjugator was designed as a solid block with a flat surface for the acoustic incidence from water. The phase conjugate reflectivity showed incident angle dependence, which is mainly determined by the transmissivity of the acoustic waves, together with some effects of anisotropy. The field-reconstructing ability of this phase conjugator was simulated for focused incident beams.     

Role of bismuth precursor in crystallization of SrBi2Ta2O9 thin films

Crystallization of SrBi₂Ta₂O₉ (SBT) thin films was studied as a function of viscosity of bismuth precursor and baking temperature, in order to fabricate capacitors with improved ferroelectric properties. SBT thin films were deposited on to Pt substrates using a chemical solution deposition (CSD) technique. Post-deposition anneal at 750 °C for 1 h in oxygen atmosphere revealed a significant influence of baking temperature and the viscosity of bismuth precursor on the microstructure and the ferroelectric properties of SBT thin films. A high baking temperature (350 °C) and a low viscosity of bismuth precursor (8 cp) yielded larger amounts of Bi₂O₃ secondary phase, smaller SBT grains (104 nm), and lower remanent polarization (P_r=2.0 7c/cm²). Additionally, these films exhibited a very high rate of ageing (>45% reduction in P_r after 7 days). A modified CSD process is suggested, which could suppress the formation of Bi₂O₃ secondary phase. Films fabricated using modified CSD technique exhibited a much larger grain size of 165 nm, higher P_r of 7.2 7c/cm², and significantly improved ageing characteristics (<1% reduction in P_r after 7 days). A qualitative model to describe the ageing in SBT-based capacitors is also suggested.     

动载下剪应力对硫化镉单晶相变影响的实验研究

 动载下剪应力对相变起始压力有无影响，长期以来一直是一个未解决的问题。Duvall和Graham建议用硫化镉（CdS）晶体来作为判断材料。本文采用前后压电石英传感器方法系统地研究了高速平面撞击下的c轴CdS单晶试样中剪应力对相变起始压力的影响。实验测得其轴向相变起始应力为σ_T=(3.25±0.1) GPa，对应的平均压力p_T=(2.29±0.07) GPa，与静高压值2.3 GPa相比在实验误差范围内很吻合，这时相应的剪应力τ_T=0.72 GPa，高达平均压力的31.5%。这一结果表明，相变机制可以假定为仅与临界平均应力或临界热力学状态有关，剪应力对相变起始压力的影响可以忽略。     

室温下Fe62Ni27Mn11（wt%）合金的压致fcc-hcp相变

 本文采用Mao-Bell型金刚石对顶砧（DAC）及高压在位（in situ）粉末X光衍射照相方法研究了Fe₆₂Ni₂₇Mn₁₁（wt%）合金在0~43.2 GPa压力范围内的压致结构相变和等温压缩行为，实验结果表明，该合金在低压时为fcc结构，在19.4 GPa压力附近出现压致fcc→hcp结构相变，直到43.2 GPa一直保持fcc、hcp二相共存；相变过程中，二相的molar体积相同；高压hcp相得晶格参数比值c/a基本上不随压力而变，可以表示为c/a=1.630±0.006；在卸压过程中，hcp相可保持到5.8 GPa，当卸压到常压时，该合金完全恢复到fcc结构；用Murnaghan等温固体状态方程对其压缩数据进行最小二乘法拟合，得到B₀=(166±12) GPa，B₀'=5.2±0.5；本文还给出了该合金的压致fcc→hcp结构相变模型，并对存在很宽的二相共存区间问题进行了初步探讨。     

固相线下Pr1-xBa2-yCax+yCu3O7±δ体系的相关系和晶体结构

 利用X射线衍射分析和Rietveld结构精修的方法研究了固相线下Pr_1-xBa_2-yCa_x+yCu₃O_7±δ体系的相关系和晶体结构。研究表明：950 ℃、空气条件下，Pr_1-xBa_2-yCa_x+yCu₃O_7±δ（y=0）体系系列样品总是含有两相：Pr123（PrBa₂Cu₃O_7±δ）和BaCuO₂；而且，随Ca含量的增加，杂相BaCuO₂的含量也随之增加。Pr_1-xBa_2-yCa_x+yCu₃O_7±δ（x=0）体系y=0.1、0.2、0.3、0.4的样品都只含有Pr123单相；y=0.5的样品含有3相：Pr123、Ca₂CuO₃和Pr₄Ca₁₀Cu₂₄O₄₁。另外，Pr_1-xBa_2-yCa_x+yCu₃O_7±δ（x=0）系列样品（y=0.1、0.2、0.3、0.4）中Pr123相还发生了正交-四方晶系的结构转化。y=0.1和0.2的样品为正交晶系，晶胞参数分别为a=0.390 33(4)和0.389 36(1) nm，b=0.389 53(4)和0.387 73(1) nm，c=1.173 38(4) 和1.168 20(2) nm；y=0.3和0.4的样品为四方晶系，晶胞参数分别为a=b=0.387 80(0) 和0.387 67(0) nm，c=1.166 00(2) 和1.165 20(2) nm。在Pr123结构中，Ba离子可以被Pr离子代替，但不能被Ca离子所代替。Ca离子占据部分Pr离子的位置。在Pr_1-xBa_2-yCa_x+yCu₃O_7±δ（x=0）体系中Pr、Ba和Ca离子间的相互替代中，离子半径比化学性质起到了更大的作用。在950 ℃、空气条件下，Ca离子在Pr_1-xBa_2-yCa_x+yCu₃O_7±δ体系中的最大溶解量是当x=0时，y≤0.4。     

Dispersion compensation for a femtosecond self-pumped phase conjugator

Dispersion compensation for a photorefractive self-pumped phase conjugator with femtosecond pulses is analyzed. The self-pumped phase conjugator consists of a pair of dynamic gratings coupled by total internal reflections at the crystal surfaces (cat conjugator). The negative angular dispersions of refraction at the air-crystal interface and the gratings inside the crystal compensate for the positive dispersion of the finite crystal path. The experimental results show that with partial dispersion compensation the width of the self-pumped phase conjugation at 450 nm of femtosecond pulses is narrower than that of the transmitted pulses.     

Flexible Cu（In,Ga）Se2 Thin-Film Solar Cells on Polyimide Substrate by Low-Temperature Deposition Process

The electrical and structural properties of polycrystalline Cu（In, Ga）Se2 films grown on polyimide （PI） substrates below 400℃ via one-stage and three-stage co-evaporation process have been investigated by x-ray diffraction spectra （XRD）, scanning electron microscopy （SEM） and Hall effect measurement. As shown by XRD spectra, the stoichiometric CIGS films obtained by one-stage process exhibit the characteristic diffraction peaks of the （In0.68Ga0.32）2Se3 and Cu（In0.7Ga0.3）2Se. It is also found that the film structures indicate more columnar and compact than the three-stage process films from SEM images. The stoichiometric CIGS films obtained by three-stage process exhibit the coexistence of the secondary phase of （In0.68Ga0.32）2Se3, Cu2-xSe and Cu（In0.7Ga0.3）2Se. High net carrier concentration and sheet conductivity are also observed for this kind of film, related to the presence of Cu2-xSe phase. As a result, when the CIGS film growth temperature is below 400℃, the three-stage process is inefficient for solar cells. By using the one-stage co-evaporation process, the flexible CIGS solar cell on a PI substrate with the best conversion efficiency of 6.38% is demonstrated （active area 0.16cm^2）.     

Raman Investigation of BaWO4-II Phase under Hydrostatic Pressures up to 14.8GPa

The BaW04-17 phase is synthesized at 5.0 GPa and 610~C with a cubic-anvil apparatus and identified by XRD. Raman scattering measurement is carried out to investigate the phase behaviour of a pure BaW04-Ⅱ phase （space group P21/n, Z = 8） under hydrostatic pressures up to 14.8 GPa at ambient temperature. In each spectrum recorded for this phase, 27 Raman modes are observed, and all bands shift toward higher wavenumber with a pressure dependence ranging from 3.8 to 0.2 cm- 1/GPa. No pressure-driven phase transition occurs in the entire pressure range in this study. Our results indicate that the previously reported high pressure phase of Ba WO4 at pressure above about 10 GPa and room temperature （Errandonea et al. Phys. Rev. B 73（2006）224103） is not the BaW04-Ⅱ phase.     

COMPETITION BETWEEN SELF-PUMPED AND MUTUALLY-PUMPED PHASE CONJUGATIONS IN A BaTiO3 BRIDGE PHASE CONJUGATOR

This paper reveals the inter-dependence and the competition between self-pumped and mutually-pumped phase conjugations, and deals with the periodic instabilities in the phase conjugate output of a BaTiO₃ bridge phase conjugator. It presents experimental data demon-strating these instabilities and also gives evidence that the addition of the second heam in a bridge phase conjugator can affect the self-pumping threshold for the first beam. A mathe-matical model is developed to explain the observed output oscillations.     

一种新的氮化碳相的冲击波合成

 为了合成理论预测存在的高密度氮化碳相,以富氮的C-N-O非晶材料和晶态的双氰胺为前体,在低于50 GPa的冲击压力范围内进行了一系列冲击回收实验。回收产物的XRD衍射表明,形成了由β-C₃N₄和一种新的氮化碳相组成的复合相。该新相的衍射峰可以完全指标化为一个单斜晶胞,晶胞常数为a=0.981 nm,b=0.723 nm,c=0.561 nm,β=95.2°,晶胞体积V_cell=0.396 6 nm³。根据实验结果可以认为,氮化碳复合相的形成是前体有机分子在瞬态的冲击波化学反应后,经历了极高速的冲击淬火过程（约10⁹ K/s）,作为一种高压亚稳相而被保存下来。冲击压缩富氮的有机物前体,是合成氮化碳相的一种新方法。     

Estimation of dynamic parameters of overthreshold parametric phase conjugation of ultrasound in magnetostrictive ferrites according to data of quasi-static measurements

A simple method for testing ferrite samples intended to be active elements of parametric phase conjugator of ultrasound was proposed and experimentally approved. The method allows one to estimate such dynamic parameters of parametric phase conjugator of ultrasound as the parametric amplification increment, threshold of absolute parametric instability, and optimum operating point position for a particular sample using results of measurements in a dc magnetic field. Results for two ferrite samples of different compositions and properties were compared to direct measurement data; their satisfactory agreement was obtained.     

A quality of parametric wave phase conjugation of ultrasound

The criterion, known from optics, of wave phase conjugation quality is accommodated for acoustical experiment. An incident focused sound beam at 5 MHz is propagated towards a supercritical magnetoelastic conjugator through an introduced random phase layer, and the conjugate beam propagates backwards through the layer to the source. 1D and 2D distributions of wave field are measured for the conjugate beam of finite amplitude using a membrane hydrophone. The maximum sound intensity of 640 W/cm2 and acoustic power of 4 W are registered in the focal maximum of the conjugate wave. The quality of WPC is calculated from the ratio between the power in the central maximum and the total power of the conjugate beam. The method is applied to compare two operation modes of a supercritical parametric conjugator. It is shown that in the linear mode the conjugator provides higher quality than in the nonlinear (0.54 compared to 0.24).     

A Comparison of GaN Epilayers with Multiple Buffer Layers and with a Single Buffer Layer Grown on Si（111） Studied by HRXRD and RBS/Channeling

Two hexagonal GaN epilayers （samples A and B） with multiple buffer layers and single buffer layer are grown on Si （111） by metal-organic vapour phase epitaxy （MOVPE）. From the results of Rutherford backscattering （RBS）/channeling and high resolution x-ray diffraction （HRXRD）, we obtain the lattice constant （a and c） of two GaN epilayers （aA = 0.3190 nm, cA = 0.5184 nm and aB = 0.3192 nm, CB = 0.5179 nm）, the crystal quality of two GaN epilayers （ ХminA=4.87%, ХminB =7.35% along 〈1-↑213〉 axis） and the tetragonal distortion eT of the two samples along depth （sample A is nearly fully relaxed, sample B is not relaxed enough）. Comparing the results with the two samples, it is indicated that sample A with multiple buffer layers have better crystal quality than sample B with a single buffer layer, and it is a good way to grow GaN epilayer on Si （111） substrates using multiple buffer layers to improve crystal quality and to reduce lattice mismatch.     

Multi-functional real-time optical processor with self-pumped phase conjugator of Cu:KNSBN

A multi-functional real-time optical processor with a self-pumped phase conjugator of Cu:KNSBN crystal is presented. The key device, self-pumped phase conjugator, has functions of both a mirror and a real-time recording medium in the processor.     

Na填充型方钴矿化合物CoSb3的高压合成及电输运特性研究

 利用高压合成方法,在压力为2 GPa、温度为900 K的条件下,以NaN₃作为添加剂,成功地合成出了Na填充型的方钴矿化合物CoSb₃。X射线衍射（XRD）研究结果表明,当Na填充量达80%时,合成的Na填充型方钴矿化合物CoSb₃仍为单相方钴矿结构,没有Na和NaN₃等杂质峰。在室温下对不同Na填充量的样品进行了电阻率（ρ）和Seebeck系数（α）的测试,研究了不同Na填充量对样品电阻率、Seebeck系数和功率因子（α²σ）的影响。研究结果表明：室温下,样品的电导率随Na填充量的增加而增大,Seebeck系数的绝对值随Na填充量的增加而减小。当Na填充量为0.4时,样品获得了最高的功率因子（8.72 μW·cm^-1·K^-2）,此值高于He等报道的利用热压法制备的CoSb₃的值。填充量对样品电输运特性的影响规律与Pei等研究的K填充型CoSb₃的研究结果相一致。上述研究结果表明,高压合成技术有利于提高填充型方钴矿化合物的填充量,并有效地提高样品的电输运特性。