A magnetic study of HoMn6Sn6−xGax single crystals (0.14⩽x⩽1.89)

Single crystals of hexagonal HfFe₆Ge₆-type HoMn₆Sn_6−xGa_x compounds (0.14⩽x⩽1.89) have been obtained by a flux method and studied by magnetisation measurements. All the compounds order ferrimagnetically (308⩽T_c⩽386 K) with moments lying in the (0 0 1) plane and undergo a moment reorientation transition at lower temperatures (156⩽T_SR⩽195 K). At 5 K, the moments are aligned along an intermediate direction (44⩽φ_c⩽50°). These results are discussed and compared with the neutron diffraction results related to the isotypic TmMn₆Sn_6−xGa_x and TbMn₆Sn_6−xGa_x series where a change of the easy direction is observed with increasing gallium contents.     

Composition and lattice mismatch dependent dielectric constants and optical phonon modes of InAs1−x−ySbxPy quaternary alloys

Based on the pseudopotential formalism under the virtual crystal approximation, the dielectric and lattice vibration properties of zinc-blende InAs_1−x−ySb_xP_y quaternary system under conditions of lattice matching and lattice mismatching to InAs substrates have been investigated. Generally, a good agreement is noticed between our results and the available experimental and theoretical data reported in the literature. The variation of all features of interest versus either the composition parameter x or the lattice mismatch percentage is found to be monotonic and almost linear. The present study provides more opportunities to get diverse high-frequency and static dielectric constants, longitudinal and transversal optical phonon modes and phonon frequency splitting by a proper choice of the composition parameters x and y (0 ⩽ x ⩽ 0.30, 0 ⩽ y ⩽ 0.69) and/or the lattice mismatch percentage.     

Electrical and mechanical properties of diluted magnetic semiconductor Zn1−xMnxS nanocrystalline films

Nanostructured Zn_1−xMn_xS films (0 ⩽ x ⩽ 0.25) were deposited on glass substrates by simple resistive thermal evaporation technique. All the films were deposited at 300 K in a vacuum of 2 × 10⁻⁶ m bar. All the films temperature dependence of resistivity revealed semiconducting behaviour of the samples. Hot probe test revealed that all the samples exhibited n-type conductivity. The nanohardness of the films ranges from 4.7 to 9.9 GPa, Young’s modulus value ranging 69.7–94.2 GPa.     

Band overlap via chemical pressure control in double perovskite (Sr2−xCax)FeMoO6 (0 ⩽ x ⩽ 2.0) with TMR effect

The chemical pressure control in (Sr_2−xCa_x)FeMoO₆ (0 ⩽ x ⩽ 2.0) with double perovskite structure has been investigated systematically. We have performed first-principles total energy and electronic structure calculations for x = 0 and x = 2.0. The increasing Ca content in (Sr_2−xCa_x)FeMoO₆ samples increases the magnetic moment close to the theoretical value due to reduction of Fe/Mo anti-site disorder. An increasing Ca content results in increasing (Fe²⁺ + Mo⁶⁺)/(Fe³⁺ + Mo⁵⁺) band overlap rather than bandwidth changes. This is explained from simple ionic size arguments and is supported by X-ray absorption near edge structure (XANES) spectra and band structure calculations.     

Effect of Fe doping on the room temperature ferromagnetism in chemically synthesized (In1−xFex)2O3 (0 ⩽ x ⩽ 0.07) magnetic semiconductors

Observation of room temperature ferromagnetism in Fe doped In₂O₃ samples (In_1−xFe_x)₂O₃ (0 ⩽ x ⩽ 0.07) prepared by co-precipitation technique is reported. Lattice parameter obtained from powder X software shows distinct shrinkage of the lattice constant indicating an actual incorporation of Fe ions into the In₂O₃ lattice. X-ray diffraction data measurements show that the entire sample exhibits single phase polycrystalline behavior. SEM micrographs showed the prepared powder was in the range 25–36 nm. SEM EDS mapping showed the presence of Fe and In ions in the Fe doped In₂O₃ sample. The highest remanence magnetization moment (6.624 × 10⁻⁴ emu/g) is reached in the sample with x = 0.03.     

Effect of doping on cohesive and thermophysical properties of MgB2

The effects of doping Al and Mn on the cohesive and thermophysical properties of MgB₂ have been investigated using a Rigid Ion Model (RIM). The interatomic potential of this model includes contributions from the long-range Coulomb attraction and the short-range overlap repulsion and the van der Waals attraction. This model has been applied to describe the temperature dependence of the specific heat of MgB₂, Mg_1−xAl_xB₂ (x = 0.1–0.9) and Mg_1−xMn_xB₂ (x = 0.01–0.04) in the temperature range 5 K ⩽ T ⩽ 1000 K. The calculated results on cohesive energy (ϕ), Bulk modulus (B_T), molecular force constant (f), Restrahalen frequency (ν₀), Debye temperature (Θ_D) and Gruneisen parameter (γ) are also reported for these materials. Our results on Bulk modulus, Restrahalen frequency and Debye temperature are closer to the available experimental data. The comparison between our calculated and available experimental results on the specific heat at constant volume for MgB₂ and Mg_1−xAl_xB₂ (x = 0.1–0.4), particularly, at lower temperatures has shown almost an excellent agreement. The trend of variation of the specific heat with temperature is more or less similar in pure and doped MgB₂.     

Characteristics of pulse plated CdxZn1−xSe films

Cd_xZn_1−xSe films (0 ⩽ x ⩽ 1) were deposited for the first time by the pulse plating technique at different duty cycles in the range 6–50% at room temperature from an aqueous bath containing zinc sulphate, cadmium sulphate and selenium oxide. To the author’s knowledge this is the first report on pulse plated Cd_xZn_1−xSe films. The deposition potential was −0.9 V (SCE). The as deposited films exhibited cubic structure. Composition of the films was estimated by Energy Dispersive Analysis of X-ray studies. X-ray photoelectron spectroscopy studies indicated the binding energies corresponding to Zn(2p_3/2), Cd(3d_5/2 and 3d_3/2) and Se(3d_5/2 and 3d_3/2). Optical band gap of the films varied from 1.72 to 2.70 eV as the composition varied from CdSe to ZnSe side. Atomic force microscopy studies indicated grain size in the range of 20–150 nm.     

Missing superconductivity in BaAlSi with the AlB2 type structure

The solid solutions BaAl_1−xSi_1+x (0 ⩽ x ⩽ 0.5) were prepared. The compound with the stoichiometric composition (x = 0) did not show superconductivity as reported by other investigators, but the solid solutions with x > 0 became superconductors with a transition temperature T_c = 2.8 K. The comparison of the lattice parameters with those of the other isotypic ternary superconductors MAlSi (M = Ca, Sr) suggested that the superconductivity could be related to the lattice parameter within the (AlSi) plane rather than the interlayer spacing. The band structures near the Fermi level of MAlSi (M = Ca, Sr, Ba) were measured using soft X-ray photoelectron spectroscopy, which were in good agreement with the calculated ones, confirming that the contribution of the d orbitals of the alkaline-earth metals were predominant in the conduction bands.     

Influence of Sr substitution on thermoelectric properties of La1−xSrxFeO3 ceramics

Perovskite La_1−xSr_xFeO₃ (0.10 ⩽ x ⩽ 0.20) ceramics have been synthesized by the conventional solid-state reaction technique. Their electrical resistivity, Seebeck coefficient and thermal conductivity have been measured. It has been found that the increase of Sr content reduces significantly both the electrical resistivity and the Seebeck coefficient, but slightly increases the high-temperature thermal conductivity. An adiabatic hopping conduction mechanism of small polaron is suggested from the analysis of the temperature dependence of the electrical resistivity. Seebeck coefficients decrease with increasing temperature, and saturate at temperature above 573 K. The saturated value of Seebeck coefficient decreases with increasing of Sr contents, from 200 μV/K for x = 0.10 to 100 μV/K for x = 0.20. All samples exhibit lower thermal conductivity with values around 2.6 W/m K. The highest dimensionless figure of merit is 0.031 at temperature 973 K in La_0.88Sr_0.12FeO₃.     

57Fe Mössbauer spectroscopy and magnetization study of YFexAl12−x (4.4⩽x⩽5)

YFe_xAl_12−x in the composition range 4.4⩽x⩽5 was prepared by induction melting followed by annealing in vacuum at 1270 K. Magnetization data below 150 K show complex magnetic behaviour dependent on applied field, composition and temperature. The transition temperature T_c, corresponding to the main maximum of the magnetization vs. temperature curves and below which magnetic interactions are observed for a significant fraction of the Fe atoms in the Mössbauer spectra, decreases from 180 K for x=4 down to 100 K for 4.2⩽x⩽4.7 and rises again up to 160 K for x=5. The analysis of the spectra obtained at 5 K is consistent with full occupation of the 8f sites by Fe atoms and sharing of the 8j sites by Fe and Al as deduced from the Rietveld analysis of X-ray powder diffraction data. The Mössbauer spectra further show a dependence of magnetic hyperfine fields and isomer shifts on the crystallographic site and on the number of the Fe nearest neighbours similar to that observed in UFe_xAl_12−x (4⩽x⩽6) and RFe_xAl_12−x (R=Y, Lu, x=4, 4.2). The magnetic properties of the UFe_xAl_12−x and YFe_xAl_12−x series are compared and the magnetic interactions between the different Fe sublattices are discussed.     

Tuneability of Sm(1 − x)CexFeO3 ± λ perovskites: Thermal stability and electrical conductivity

Trimetallic perovskite oxides, Sm_(1 ? x)Ce_xFeO_3 ± λ (x = 0–0.05), were prepared by thermal decomposition of amorphous citrate precursors followed by calcinations. The material properties of the substituted perovskites were characterized by X-ray diffraction (XRD), X-ray florescence spectroscopy (XRF), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The doped materials exhibited a single perovskite phase in air up to 1350 °C and have specific surface areas in the range of 2.696–8.665 m²/g. In reducing atmosphere (5%v/vH₂/N₂), the unsubstituted perovskite (x = 0) decomposed into two phases while the ceria stabilized materials (x = 0.01, x = 0.03, x = 0.05) remained in a single phase as revealed by XRD analysis. Their conductivities were measured by the four point probe method in air and in dilute hydrogen (5%v/vH₂/N₂) separately. The ceria substituted materials show increased stability versus reduction and phase separation for a wide temperature range (up to 1000 °C). Although undoped SmFeO₃ has higher conductivity under oxidizing conditions than ceria doped SmFeO₃ due its p-type nature, the situation is reversed under reducing conditions. The ceria substituted perovskites (Sm_(1 ? x)Ce_xFeO_3 ± λ, x = 0–0.05) showed higher conductivity in reducing than in oxidizing conditions, suggesting that ceria doping at the A-site has changed the SmFeO₃ from p-type to n-type semi-conducting behavior.     

Giant magnetoresistance in the Ge-rich magnetocaloric compound,Gd5(Si0.1Ge0.9)4

We have measured the zero-field electrical resistivity in the temperature range 5–295 K and magnetoresistance in magnetic fields of up to 12 T of Gd₅(Si_0.1Ge_0.9)₄. The resistivity changes drastically at the magnetostructural first-order transition (T_C≅80 K on heating). This transition can be induced reversibly by the application of an external magnetic field above T_C, producing a concomitant giant magnetoresistance (GMR) effect, Δρ/ρ≅−50%. This study demonstrates that (in addition to giant magnetocaloric and magnetoelastic effects) GMR can be tuned between ∼20 and ∼290 K in Gd₅(Si_xGe_1−x)₄ with x⩽0.5 by simply adjusting the Si : Ge ratio.     

Theoretical study of optoelectronic properties of GaAs1−xBix alloys using valence band anticrossing model

The (12 × 12) and (14 × 14) valence band anticrossing (V-BAC) models were applied to calculate the electronic band structure of GaAs_1−xBi_x dilute alloys along Δ-, Λ- and Σ-directions at room temperature. A comparative study based on these models was performed in terms of energy levels, optical transitions, spin–orbit splitting and effective mass. We found a significant reduction of the band-gap energy E_g by roughly 81 meV/%Bi accompanied by an increase in the spin–orbit splitting Δ_so+ by about 56 meV/%Bi. Furthermore, Δ_so+ does come into resonance with E_g at ∼12%Bi for resonance energy equal to 0.73 eV. An excellent agreement has occurred between the (14 × 14) V-BAC model predictions and experimental results reported in the literature. In addition, we have investigated the Bi composition and k-directions dependence of the effective mass at Γ point. A slight increase of the holes effective mass with x can affect the holes transport properties of GaAsBi. The intrinsic carrier density increases with both x and the temperature T, but it remains below 10¹⁰ cm⁻³ for x ⩽ 5% and T ⩽ 300 K.     

Spin reorientation and magnetocrystalline anisotropy of (Nd1−xDyx) Fe14B

Spin reorientation and magnetocrytalline anisotropy of (Nd_1−xDy_x)₂Fe₁₄B (x=0.25, 0.5, 0.75) have been studied from mangetization curves of magnetically aligned powders. In (Nd_1−xDy_x)₂Fe₁₄B, the spin reorientation temperature (T_SR) decreases linearly on increasing Dy-substitution from 135 to 56 K with the ratio of ΔT_SR=−1.11 K/Dy at% in the composition range of 0⩽x⩽0.75. The spin reorientation angle at 4.2 K decreases on Dy-substitution from 30.4° at x=0 to 14.7° at x=0.75. From the investigation of the magnetocrystalline anisotropy at 4.2 K, the disappearance of the spin reorientation for compositions x≳0.85 is expected.     

Correlation between Meyer–Neldel rule and phase separation in Se98−xZn2Inx chalcogenide glasses

The present work reports the observation of Meyer–Neldel rule for the thermally activated crystallization of glassy Se_98−xZn₂In_x (0 ⩽ x ⩽ 10) alloys. We have observed a strong co-relation between the pre-exponential factor K₀ of rate constant K(T) of crystallization and activation energy of crystallization E_c in the present case. This indicates the presence of compensation effect for the non-isothermal crystallization process in the present glassy system, which is explained in terms of phase separation of the present alloys due to flaw bonds of these amorphous solids.     

Effect of rare-earth donor Ce3+ doping at A-site of PLSZNT on dielectric and piezoelectric properties

Dielectric and piezoelectric properties of [Pb_0.976La_0.014−xCe_xSr_0.01][Zr_0.57Ti_0.43]_{(0.9975−((0.014−x)/4)−(x/4))}Nb_0.002O₃ (PLCSZNT) ceramic compositions for 0 ⩽ x ⩽ 1 mol% were investigated. The XRD analysis showed the presence of single rhombohedral phase. Grain size and density increased until 0.6 mol% Ce and further Ce concentration inhibited the grain growth. The stability of rhombohedral phase has been supported by tolerance factor and average electronegativity difference. The room temperature dielectric response (ε_RT) increased up to 0.6 mol% combined with a significantly reduced dielectric loss (Tan δ) and low Curie temperature (T_c). The higher piezoelectric properties associated with low Ce concentration are attributed to rhombohedral phase. The optimum dielectric and piezoelectric properties were found in 0.6 mol% Ce composition which could be suitable for possible piezoelectric applications.     

Determination of the critical indium composition corresponding to the metal–insulator transition in InxGa1−xN (0.06 ⩽ x ⩽ 0.135) layers

The low-temperature conductivity of In_xGa_1−xN alloys (0.06 ⩽ x ⩽ 0.135) is analyzed as a function of indium composition (x). Although our In_xGa_1−xN alloys were on the metallic side of the metal–insulator transition, neither the Kubo-Greenwood nor Born approach were able to describe the transport properties of the In_xGa_1−xN alloys. In addition, all of the In_xGa_1−xN alloys took place below the Ioeffe–Regel regime with their low conductivities. The observed behavior is discussed in the framework of the scaling theory. With decreasing indium composition, a decrease in thermal activation energy is observed. For the metal–insulator transition, the critical indium composition is obtained as x_c = 0.0543 for In_xGa_1−xN alloys.     

Investigation of carrier scattering mechanisms in n-Cd1−xMgxSe single crystals using Fourier Transform Infrared Spectroscopy

This paper presents results of investigations of carrier scattering mechanisms in n-Cd_1−xMg_xSe mixed crystals with magnesium content varying from x = 0 to x = 0.33. Experimental results obtained by means of the Fourier Transform Infrared Spectroscopy (FT-IR) and Hall measurements are discussed in the frame of the Drude and the quantum theories. The character of the wavelength dependence of the optical absorption coefficient in investigated crystals was found to be of the type ∼λ^p, where 2 < p < 3.5. The p = 2 is expected from the Drude theory and the relaxation time approximation. The obtained experimental values of p parameter suggest that the optical phonon and impurity scattering mechanisms are dominating scattering mechanisms in these crystals. The calculated carrier concentration from optical absorption spectrum for a n-CdSe crystal is in a good agreement with this obtained from Hall measurement.     

Interfacial reactions of Ba2YCu3O6+z with coated conductor buffer layer,LaMnO3

Chemical interactions between the Ba₂YCu₃O_6+x superconductor and the LaMnO₃ buffer layers employed in coated conductors have been investigated experimentally by determining the phases formed in the Ba₂YCu₃O_6+x–LaMnO₃ system. The Ba₂YCu₃O_6+x–LaMnO₃ join within the BaO–(Y₂O₃–La₂O₃)–MnO₂–CuO_x multi-component system is non-binary. At 810 °C (p_O2 = 100 Pa) and at 950 °C in purified air, four phases are consistently present along the join, namely, Ba_2?x(La_1+x?yY_y)Cu₃O_6+z, Ba(Y_2?xLa_x)CuO₅, (La_1?xY_x)MnO₃, (La,Y)Mn₂O₅. The crystal chemistry and crystallography of Ba(Y_2?xLa_x)CuO₅ and (La_1?xY_x)Mn₂O₅ were studied using the X-ray Rietveld refinement technique. The Y-rich and La-rich solid solution limits for Ba(Y_2?xLa_x)CuO₅ are Ba(Y_1.8La_0.2)CuO₅ and Ba(Y_0.1La_1.9)CuO₅, respectively. The structure of Ba(Y_1.8La_0.2)CuO₅ is Pnma (No. 62), a = 12.2161(5) Å, b = 5.6690(2) Å, c = 7.1468(3) Å, V = 494.94(4) Å³, and D_x = 6.29 g cm^?3. YMn₂O₅ and LaMn₂O₅ do not form solid solution at 810 °C (p_O2 = 100 Pa) or at 950 °C (in air). The structure of YMn₂O₅ was confirmed to be Pbam (No. 55), a = 7.27832(14) Å, b = 8.46707(14) Å, c = 5.66495(10) Å, and V = 349.108(14) Å³. A reference X-ray pattern was prepared for YMn₂O₅.     

FMR investigation of magnetic anisotropies in Fe/Au superlattices

Fe(xML)/Au(xML) superlattices (1⩽x⩽4, ML: monatomic layer thickness) have been investigated by the ferromagnetic resonance method at room temperature. It has been confirmed that out-of-plane anisotropy field H_u shows oscillatory behavior as a function of Fe layer thickness with a period of 1 ML as reported previously from magnetization measurements. In addition, we have found that the in-plane fourfold anisotropy field H₂ oscillates in a similar manner. The easy magnetization axis for x⩾2.25 is Fe [1 1 0] in contrast with the case of bulk Fe, and the values of H₂ show maxima for x=2.5 and 3.5, suggesting that the atomic steps at interfaces are formed along the Fe [1 1 0] direction. Furthermore, the interface roughness for x=non-integer causes wide distributions of H_u and H₂ compared to those for x=integer with flat interfaces.