Improved Ligand-Field Theoretical Calculations of R-Line Thermal Broadenings of NIgO：Cr^3＋ and MgO：V^2＋

With the values of parameters obtained from improved ligand-field theory, by taking into account all the irreducible representations and their components in EPI as well as all the levels and the admixtures of basic wavefunctions within d^3 electronic configuration, the R-line thermal broadenings （TB） of both MgO：Cr^3＋ and MgO：V^2＋ have microscopic-theoretically been calculated, The results are in very good agreement with the experimental data. It is found that the R-line TB of MgO：Cr^3＋ or MgO：V^2＋ comes from the first-order term of EPI. The elastic Raman scattering of acoustic phonons plays a dominant role in R-line TB of MgO：Cr^3＋ or MgO：V^2＋.     

Discharge characteristics of the DUHOCAMIS with a high magnetic bottle-shaped field

For the purpose of producing high intensity, multiply charged metal ion beams, the dual hollow cathode ion source for metal ions （DUHOCAMIS） was derived from the hot cathode Penning ion source combined with the hollow cathode sputtering experiments in 2007. To investigate the behavior of this discharge geometry in a stronger magnetic bottle-shaped field, a new test bench for DUHOCAMIS with a high magnetic bottle-shaped field up to 0.6 T has been set up at the Peking University. The experiments with magnetic fields from 0.13 T to 0.52 T have indicated that the discharge behavior is very sensitive to the magnetic flux densities. The slope of discharge curves in a very wide range can be controlled by changing the magnetic field as well as regulated by adjusting the cathode heating power; the production of metallic ions would be much greater than gas ions with the increased magnetic flux density; and the magnetic field has a much higher influence on the DHCD mode than on the PIG mode.     

Field-induced insulator-metal-insulator transitions in low-energy H2- ion-irradiated epitaxial La2/3Cal/3MnO3 thin films

Epitaxial La2/3Cal/3MnO3 thin films grown on LaA103 （001） substrates were irradiated with low-energy 120-keV H＋ ions over doses ranging from 1012 ions/cm2 to 1017 ions/cm2. The irradiation suppresses the intrinsic insulator-metal （I-M） transition temperature and increases the resistance by reducing the crystallographic symmetry of the films. No irradiation-induced columnar defects were observed in any of the samples. The specific film irradiated at a critical dose around 8 x 1015 ions/cm2 is in a threshold state of the electric insulator where the I-M transition is absent. In an external field of 4 T or higher, the I-M transition is restored and thus an enormous magnetoresistance is observed, while a negative temperature coefficient resumes as the temperature is reduced further. Magnetic relaxation behavior is confirmed in this and other heavily irradiated samples. The results are interpreted in terms of the displacement of oxygen atoms provoked by ion irradiation and the resulting magnetic glassy state, which can be driven into a phase coexistence of metallic ferromagnetic droplets and the insulating glass matrix in a magnetic field.     

Simulation of energy scan of pion interferometry in central Au＋Au collisions at relativistic energies

We present a systematic analysis of two-pion interferometry for the central Au＋Au collisions at √SNN=3, 5, 7, 11, 17, 27, 39, 62, 130 and 200 GeV/c with the help of a multiphase transport （AMPT） model. Emission source-size radius parameters Rlong, Rout, Rside and the chaotic parameter A are extracted and compared with the experimental data. Transverse momentum and azimuthal angle dependencies of the HBT radii are also discussed for central Au＋Au collisions at 200 GeV/c. The results show that the HBT radii in central collisions do not change much above 7 GeV/c. For central collisions at 200 GeV/c, the radii decrease with the increasing of transverse momentum PT but are not sensitive to the azimuthal angle. These results provide a theoretical reference for the energy scan program of the RHIC-STAR experiment.     

Modeling and assessing the influence of linear energy transfer on multiple bit upset susceptibility

The influence of the metric of linear energy transfer （LET） on single event upset （SEU）, particularly multiple bit upset （MBU） in a hypothetical 90-nm static random access memory （SRAM） is explored. To explain the odd point of higher LET incident ion but induced lower cross section in the curve of SEU cross section, MBUs induced by incident ions 132Xe and 2~9Bi with the same LET but different energies at oblique incidence are investigated using multi-functional package for single event effect analysis （MUFPSA）. In addition, a comprehensive analytical model of the radial track structure is incorporated into MUFPSA, which is a complementation for assessing and interpreting MBU susceptibility of SRAM. The results show that （i） with the increase of incident angle, MBU multiplicity and probability each present an increasing trend; （ii） due to the higher ion relative velocity and longer range of ~ electrons, higher energy ions trigger the MBU with less probability than lower energy ions.     

Li–N dual-doped ZnO thin films prepared by an ion beam enhanced deposition method

Li–N dual-doped ZnO films [ZnO:(Li,N)] with Li doping concentrations of 3 at.%–5 at.% were grown on a glass substrate using an ion beam enhanced deposition(IBED) method. An optimal p-type ZnO:(Li,N) film with the resistivity of 11.4 Ω·cm was obtained by doping 4 at.% of Li and 5 sccm flow ratio of N2. The ZnO:(Li,N) films exhibited a wurtzite structure and good transmittance in the visible region. The p-type conductive mechanism of ZnO:(Li,N) films are attributed to the Li substitute Zn site(LiZn) acceptor. N doping in ZnO can forms the Lii–NOcomplex, which depresses the compensation of Li occupy interstitial site(Lii) donors for LiZnacceptor and helps to achieve p-type ZnO:(Li,N) films. Room temperature photoluminescence measurements indicate that the UV peak(381 nm) is due to the shallow acceptors LiZnin the p-type ZnO:(Li,N) films. The band gap of the ZnO:(Li,N) films has a red-shift after p-type doping.     

Thermal analysis of the CSNS H－ ion source

There are two cooling systems to maintain the thermal stability of the CSNS H^- ion source during its operation： Air-cooling in the source body of the discharging chamber and water-cooling in the flange on which the discharging chamber is installed. The optimal cooling parameters to ensure the operation of the H^- ion source are determined through a thermal analysis. In addition, a transient analysis is also performed to know exactly the transient temperature variation during the whole 40 ms period of the pulsed mode operation of the ion source.     

Radiation response of pseudo-MOS transistors fabricated in hardened fully-depleted SIMOX SOI wafers

The total dose radiation response of pseudo-MOS transistors fabricated in hardened and unhardened FD （fully-depleted） SIMOX （Separation by Implanted Oxygen） SOI （Silicon-on-insulator） wafers is presented. At 1 Mrad（Si） radiation dose, the threshold voltage shift of the pseudo-MOS transistor is reduced from -115.5 to -1.9 V by the hardening procedure. The centroid location of the net positive charge trapped in BOX, the hole-trap density and the hole capture fraction of BOX are also shown. The results suggest that hardened FD SIMOX SOI wafers can perform well in a radiation environment.     

Control system for the CSNS ion source test stand

A penning plasma surface H- ion source test stand for the CSNS has just been constructed at the IHEP. In order to achieve a safe and reliable system, nearly all devices of the ion source are designed to have the capability of both local and remote operation function. The control system consists of PLCs and EPICS real-time software tools separately serving device control and monitoring, PLC integration and OPI support. This paper summarizes the hardware and software implementation satisfying the requirements of the ion source control system.     

Rapidity dependence of hadron PT spectra in central Au＋Au collisions at √^SNN = 200 GeV

The transverse momentum spectra for identified hadrons at different rapidities in central Au＋Au collisions at √^SNN= 200 GeV are studied in a quark combination model. The results for PT spectra of π^±, K^±, p（p^-） and for the p/π ratios in a broader PT range at midrapidity agree well with the data. The transverse momentum spectra of pions, protons and antiprotons at various rapidities y - 1, η= 2.2 and y ≈ 3.2 are calculated and compared with the data.     

Characterization of deep acceptor level in as-grown ZnO thin film by molecular beam epitaxy

We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy(MBE). The hot probe measurements reveal mixed conductivity in the as-grown ZnO layers, and the current–voltage(I–V)measurements demonstrate a good quality p-type Schottky device. A new deep acceptor level is observed in the ZnO layer having activation energy of 0.49±0.03 eV and capture cross-section of 8.57×10-18cm2. Based on the results from Raman spectroscopy, photoluminescence, and secondary ion mass spectroscopy(SIMS) of the ZnO layer, the observed acceptor trap level is tentatively attributed to a nitrogen–zinc vacancy complex in ZnO.     

Optimization and numerical simulation for the extraction system of the H- multicusp ion source

A new ion source has been designed and manufactured for the CYCLONE30 accelerator, which has a much advanced performance compared with the original. It is expected that the newly designed ion source extraction system will transport a very large percentage of the beam without deteriorating the beam optics, which is designed to deliver an H- beam at 30 keV. The accelerator assembly consists of three circular aperture electrodes made of copper. The simulation study was focused on finding parameter sets that raise the beam perveance as large as possible and which reduce the beam divergence as low as possible. Ion beams of the highest quality are extracted whenever the half-angular divergence is minimum, for which the perveance current intensity and the extraction gap have optimum values. The triode extraction system is designed and optimized by using CST software （for Particle Beam Simulations）. The physical design of the extraction system is given in this paper. From the simulation results, it is concluded that it is possible to achieve this goal by decreasing the thickness of the plasma electrode, shortening the first gap, and adjusting the acceleration electrode voltage.     

Critical phenomena in a disc-percolation model and their application to relativistic heavy ion collisions

By studying the critical phenomena in continuum-percolation of discs, we find a new approach to locate the critical point, i.e. using the inflection point of P∞ as an evaluation of the percolation threshold. The susceptibility, defined as the derivative of P∞, possesses a finite-size scaling property, where the scaling exponent is the reciprocal of v, the critical exponent of the correlation length. A possible application of this approach to the study of the critical phenomena in relativistic heavy ion collisions is discussed. The critical point for deconfinement can be extracted by the inflection point of PQGP -- the probability for the event with QGP formation. The finite-size scaling of its derivative can give the critical exponent v, which is a rare case that can provide an experimental measure of a critical exponent in heavy ion collisions.     

On ηc line shape in charmonium transitions

The line shapes to observe ηc in charmonium transitions, i.e., ψ（2S）, J/ψ→γηc, are investigated. The ηc line shapes in exclusive decays or by observing the inclusive photon spectrum are given. The sensitivities to measure the ηc resonance parameters are also evaluated. With more than two thousand ηc events observed, the precision of the ηc decay width measurement will be improved by better than 3%. However, the uncertainties associated with the ηc modified line shapes will dominate the systematic errors and this will prohibit precision mass and width measurements.     

Rapidity distributions of net protons from AGS to LHC energy regions

Taking the conservation of baryon number into account in a non-uniform flow model, the rapidity distribution of the net protons at the LHC is predicted. The energy dependence of the rapidity distribution, baryon stopping and collective flow from BNL/AGS to CERN/LHC are systematically investigated.     

A pilot experiment for mass measurement at CSRe

A pilot experiment of mass measurement was performed at CSRe with the method of isochronous mass spectrometry. The secondary fragments produced via RIBLL2 with the primary beam of 400 MeV/u ^36Ar delivered by CSRm were injected into CSRe. The revolution periods of the stored ions,which depend on the mass-to-charge ratios of the stored ions,were measured with a time-of-flight detector system. The results show that the mass resolution around 8×10^-6 for △m/m is achieved.     

Charge state distribution analysis of AI and Pb ions from the laser ion source at IMP

A prototype laser ion source that could demonstrate the possibility of producing intense pulsed high charge state ion beams has been established with a commercial Nd：YAG laser （E =3 J, 1064 rim, ~ 10 ns） to produce laser plasma for the research of Laser Ion Source （LIS）. At the laser ion source test bench, high purity （99.998%） aluminum and lead targets have been tested for laser plasma experiment. An Electrostatic Ion Analyzer （EIA） and Electron Multiply Tube （EMT） detector were used to analyze the charge state and energy distribution of the ions produced by the laser ion source. The maximum charge states of A112＋ and Pb7＋ were achieved. The results will be presented and discussed in this paper.     

Effect of an Arbitrary Dust Size Distribution Dust Particles for Vortex-Like Ion Distribution Dusty Plasma

In order to investigate the effect of an arbitrary dust size distribution for vortex-like ion distribution dusty plasma, we use a reasonable polynomial-expressed function to represent an arbitrary dust size distribution. The numerical results of linear dispersion relation, nonlinear solitary wave amplitude, width and velocity for polynomial expressed dust size distribution dusty plasma with vortex-like ion distribution have been studied.     

Realization of conformal doping on multicrystalline silicon solar cells and black silicon solar cells by plasma immersion ion implantation

Emitted multi-crystalline silicon and black silicon solar cells are conformal doped by ion implantation using the plasma immersion ion implantation （PⅢ） technique. The non-uniformity of emitter doping is lower than 5 %. The secondary ion mass spectrometer profile indicates that the PⅢ technique obtained 100-rim shallow emitter and the emitter depth could be impelled by furnace annealing to 220 nm and 330 nm at 850 ℃ with one and two hours, respectively. Furnace annealing at 850 ℃ could effectively electrically activate the dopants in the silicon. The efficiency of the black silicon solar cell is 14.84% higher than that of the mc-silicon solar cell due to more incident light being absorbed.     

Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation

The degradations in NPN silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） were fully studied in this work, by means of 25-MeV Si, 10-MeV C1, 20-MeV Br, and 10-MeV Br ion irradiation, respectively. Electrical parameters such as the base current （IB）, current gain （β）, neutral base recombination （NBR）, and Early voltage （VA） were investigated and used to evaluate the tolerance to heavy ion irradiation. Experimental results demonstrate that device degradations are indeed radiation-source-dependent, and the larger the ion nuclear energy loss is, the more the displacement damages are, and thereby the more serious the performance degradation is. The maximum degradation was observed in the transistors irradiated by 10-MeV Br. For 20-MeV and 10-MeV Br ion irradiation, an unexpected degradation in Ic was observed and Early voltage decreased with increasing ion fluence, and NBR appeared to slow down at high ion fluence. The degradations in SiGe HBTs were mainly attributed to the displacement damages created by heavy ion irradiation in the transistors. The underlying physical mechanisms are analyzed and investigated in detail.