P-Type Nitrogen-Doped ZnO Films Prepared by In-Situ Thermal Oxidation of Zn_3N_2 Films

P-type nitrogen-doped ZnO films are prepared successfully by in-situ thermal oxidation of Zn_3N_2 films.The prepared films are characterized by x-ray diffraction,non-Rutherford backscattering(non-RBS) spectroscopy,xray photoelectron spectroscopy,and photoluminescence spectrum.The results show that the Zn_3N_2 films start to transform to ZnO at 400°C and the total nitrogen content decreases with the increasing annealing temperature.The p-type films are achieved at 500℃ with a low resistivity of 6.33Ω·cm and a high hole concentration of+8.82 × 10~(17) cm~(-3),as well as a low level of carbon contamination,indicating that the substitutional nitrogen(N_O) is an effective acceptor in the ZnO:N film.The photoluminescence spectra show clear UV emissions and also indicate the presence of oxygen vacancy(V_O) defects in the ZnO:N films.The p-type doping mechanism is briefly discussed.     

Effect of Ag Doping on Optical and Electrical Properties of ZnO Thin Films

ZnO thin films were prepared on p-type Si (100) substrates by the sol-gel process. The influence of Ag doping at a content of 0.002% on the photoluminescence and current-voltage (I - V) characteristics of ZnO thin films has been investigated. It is found that Ag doping leads to a pronounced increase in the intensity of near band edge emission at 3.23eV and a remarkable red shift of the visible broadband at room temperature. The I - V characteristics of ZnO/p-Si heterojunctions are also changed. These results could be explained by Ag substituting for Zn in Ag doped ZnO thin films.     

Effects of doping concentration on properties of Mn-doped ZnO thin films

This paper reports that the radio frequency magnetron sputtering is used to fabricate ZnO and Mn-doped ZnO thin films on glass substrates at 500~°C. The Mn-doped ZnO thin films present wurtzite structure of ZnO and have a smoother surface, better conductivity but no ferromagnetism. The x-ray photoelectron spectroscopy results show that the binding energy of Mn_2p3 / 2 increases with increasing Mn content slightly, and the state of Mn in the Mn-doped ZnO thin films is divalent. The chemisorbed oxygen in the Mn-doped ZnO thin films increases with increasing Mn doping concentration. The photoluminescence spectra of ZnO and Mn-doped ZnO thin films have a similar ultraviolet emission. The yellow green emissions of 4~wt.% and 10~wt.% Mn-doped thin films are quenched, whereas the yellow green emission occurs because of abundant oxygen vacancies in the Mn-doped ZnO thin films after 20~wt.% Mn doping. Compared with pure ZnO thin film, the bandgap of the Mn-doped ZnO thin films increases with increasing Mn content.     

Indium doping effect on properties of ZnO nanoparticles synthesized by sol–gel method

Pure ZnO and indium-doped ZnO(In–ZO) nanoparticles with concentrations of In ranging from 0 to 5% are synthesized by a sol–gel processing technique. The structural and optical properties of ZnO and In–ZO nanoparticles are characterized by different techniques. The structural study confirms the presence of hexagonal wurtzite phase and indicates the incorporation of In~(3+) ions at the Zn~(2+) sites. However, the optical study shows a high absorption in the UV range and an important reflectance in the visible range. The optical band gap of In–ZnO sample varies between 3.16 e V and 3.22 e V. The photoluminescence(PL) analysis reveals that two emission peaks appear: one is located at 381 nm corresponding to the near-band-edge(NBE) and the other is observed in the green region. The aim of this work is to study the effect of indium doping on the structural, morphological, and optical properties of ZnO nanoparticles.     

Effect of Different Substrate Temperature on Phosphorus-Doped ZnO Thin Films Prepared by PLD on Sapphire Substrates

Phosphorus-doped ZnO （ZnO：P） thin films are deposited on a c-plane sapphire in oxygen at 350℃, 450℃, 550℃ and 650℃, respectively, by pulsed laser deposition （PLD）, then all the ZnO：P samples are annealed at 650℃ in oxygen with a pressure of 1 × 10^5 Pa. X-ray diffraction measurements indicate that the crystalline quality of the ZnO：P thin films is improved with the increasing substrate temperature from 350℃ to 550℃. With a further increase of the deposition temperature, the crystalline quality of the ZnO：P sample is degraded. The measurements of low-temperature photoluminescence spectra demonstrate that the samples deposited at the substrate temperatures of 350℃ and 450℃ show a strong acceptor-bound exciton （A^0X） emission. The electrical properties of ZnO：P films strongly depend on the deposition temperature. The ZnO：P samples deposited at 350℃ and 450℃ exhibit p-type conductivity. The p-type ZnO：P film deposited at 450℃ shows a resistivity of 1.846Ω·cm and a relatively high hole concentration of 5.100 × 10^17 cm^-3 at room temperature.     

Effect of High Temperature Annealing on Conduction-Type ZnO Films Prepared by Direct-Current Magnetron Sputtering

We experimentally find that the ZnO thin films deposited by dc-magnetron sputtering have different conduction types after annealing at high temperature in different ambient. Hall measurements show that ZnO films annealed at 1100℃ in N2 and in 02 ambient become n-type and p-type, respectiveIy. This is due to the generation of different intrinsic defects by annealing in different ambient. X-ray photoelectron spectroscopy and photolumineseence measurements indicate that zinc interstitial becomes a main defects after annealing at 1100℃ in N2 ambient, and these defects play an important role for n-type conductivity of ZnO. While the ZnO films annealed at 1100℃ in O2 ambient, the oxygen antisite contributes ZnO films to p-type.     

Sb complexes and Zn interstitials in Sb-implanted ZnO epitaxial films

In the present work, post-annealing is adopted to investigate the formation and the correlation of Sb complexes and Zn interstitials in Sb-ion implanted ZnO films, by using Raman scattering technique and electrical characterizations. The damage of Zn sublattice, produced by ion bombardment process is discerned from the unrecovered E2 (L) peak in annealed high Sb+ dose implanted samples. It is suggested that the Zn sublattice may be strongly affected by the introduction of Sb dopant because of the formation of SbZn-2VZn complex acceptor. The appearance of a new peak at 510 cm 1 in the annealed high dose Sb+ implanted samples is speculated to result from (Zn interstitials-O interstitials) Zni-Oi complex, which is in a good accordance with the electrical measurement. The p-type ZnO is difficult to obtain from the Sb+ implantation, however, which can be realized by in-situ Sb doping with proper growth conditions instead.     

Effects of annealing rate and morphology of sol–gel derived ZnO on the performance of inverted polymer solar cells

The effects of annealing rate and morphology of sol–gel derived zinc oxide(ZnO)thin films on the performance of inverted polymer solar cells(IPSCs)are investigated.ZnO films with different morphologies are prepared at different annealing rates and used as the electron transport layers in IPSCs.The undulating morphologies of ZnO films fabricated at annealing rates of 10 C/min and 3 C/min each possess a rougher surface than that of the ZnO film fabricated at a fast annealing rate of 50 C/min.The ZnO films are characterized by atomic force microscopy(AFM),optical transmittance measurements,and simulation.The results indicate that the ZnO film formed at 3 C/min possesses a good-quality contact area with the active layer.Combined with a moderate light-scattering,the resulting device shows a 16%improvement in power conversion efficiency compared with that of the rapidly annealed ZnO film device.     

Structural and Electrical Properties of Single Crystalline Ga-Doped ZnO Thin Films Grown by Molecular Beam Epitaxy

High-quality Ga-doped ZnO （ZnO：Ga） single crystalline films with various Ga concentrations are grown on a- plane sapphire substrates using molecular-beam epitaxy. The site configuration of doped Ga atoms is studied by means of x-ray absorption spectroscopy. It is found that nearly all Ga can substitute into ZnO lattice as electrically active donors, a generating high density of free carriers with about one electron per Ga dopant when the Ga concentration is no more than 2%. However, further increasing the Ga doping concentration leads to a decrease of the conductivity due to partial segregation of Ga atoms to the minor phase of the spinel ZnGa2O4 or other intermediate phase. It seems that the maximum solubility of Ga in the ZnO single crystalline film is about 2at.% and the lowest resistivity can reach 1.92 ×10-4Ω·cm at room temperature, close to the best value reported. In contrast to ZnO：Ga thin film with 1% or 2% Ga doping, the film with 4% Ga doping exhibits a metal semiconductor transition at 80 K. The scattering mechanism of conducting electrons in single crystalline ZnO：Ga thin film is discussed.     

High mobility ultrathin ZnO p–n homojunction modulated by Zn_(0.85)Mg_(0.15)O quantum barriers

The adding of ZnMgO asymmetric double barriers(ADB) in p-ZnO:(Li, N)/n-ZnO homojunction affects the p–n junction device performance prominently. Two different homojunctions are fabricated on Si(100) substrates by pulsed laser deposition; one is the traditional p-ZnO:(Li, N)/n-ZnO homojunction with different thicknesses named as S_1 (250 nm) and S_2 (500 nm), the other is the one with ADB embedded in the n-layer named as Q (265 nm). From the photoluminescence spectra, defect luminescence present in the S-series devices is effectively limited in the Q device. The current–voltage curve of the Q device shows Zener-diode rectification property because the two-dimensional electron gas tunnels through the narrow ZnMgO barrier under a reverse bias, thus decreasing the working p–n homojunction thickness from 500 nm to265 nm. The ADB-modified homojunction shows higher carrier mobility in the Q device. The electroluminescence of the ZnO homojunction is improved in Q compared to S_2, because the holes in p-type ZnO(Li, N) can cross the wide ZnMgO barrier under a forward bias voltage into the ZnO quantum well. Therefore, electron–hole recombination occurs in the narrow bandgap of n-type ZnO, creating an ultraviolet light-emitting diode using the ZnO homojunction.     

Control of Beam Halo-Chaos for an Intense Charged-Particle Beam Propagating Through Double Periodic Focusing Field by Soliton

We study an intense beam propagating through the double periodic focusing channel by the particle-core model, and obtain the beam envelope equation. According to the Poincare-Lyapunov theorem, we analyze the stability of beam envelope equation and find the beam halo. The soliton control method for controlling the beam halo-chaos is put forward based on mechanism of halo formation and strategy of controlling beam halo-chaos, and we also prove the validity of the control method, and furthermore, the feasible experimental project is given. We perform multiparticle simulation to control the halo by using the soliton controller. It is shown that our control method is effective. We also find the radial ion density changes when the ion beam is in the channel, not only the halo-chaos and its regeneration can be eliminated by using the nonlinear control method, but also the density uniformity can be found at beam＇s centre as long as an appropriate control method is chosen.     

A pilot experiment for mass measurement at CSRe

A pilot experiment of mass measurement was performed at CSRe with the method of isochronous mass spectrometry. The secondary fragments produced via RIBLL2 with the primary beam of 400 MeV/u ^36Ar delivered by CSRm were injected into CSRe. The revolution periods of the stored ions,which depend on the mass-to-charge ratios of the stored ions,were measured with a time-of-flight detector system. The results show that the mass resolution around 8×10^-6 for △m/m is achieved.     

Beam tail effect of a performance-enhanced EC-ITC RF gun

The beam tail effect of multi-bunches will influence the electron beam performance in a high intensity thermionic RF gun. Beam dynamic calculations that illustrate the working states of single beam tail and multi-pulse feed-in of a performance-enhanced EC-ITC （external cathode independent tunable cavity） RF gun for an FEL （free electron laser） injector are performed to estimate the extracted bunch properties. By using both Parmela and homemade MATLAB codes, the effects of a single beam tail as well as interactions of multi-pulses are analyzed, where a ring-based electron algorithm is adopted to calculated RF fields and the space-charge field. Furthermore, the procedure of unexpected deviated-energy particles mixed with an effective bunch head is described by the MATLAB code as well. As a result, the performance-enhanced EC-ITC RF gun is proved to have the capability to extract continual stable bunches suitable for a high requirement THz-FEL.     

BEPCII丝靶束流截面测量系统

To monitor the beam profile at the end of the linac non-destructively, a wire scanner as a new diagnostic instrument was designed, manufactured and installed in 2007. Since then, several measurements have been carried out using this device. This paper describes the whole system of the wire scanner and the testing results.     

Multi-goal Control of Chaotic Connected Complex Networks

Beam transport network （BTN） with small world （SW） （so-called BTN-SW） and Lorenz chaotic connected network with scale-free （SF） are taken as two typical examples, we proposed a global linear coupling and combined with local error feedback methods in sub-networks to realize multi-goal control method of halo and chaos in two networks above. The simulation results show that the methods above is effective for any chaotic connected networks and has a potential of applications in based-halo-chaos secure communication.     

Physical design of FEL injector based on the performance-enhanced EC-ITC RF gun

To meet the requirements of high performance THz-FEL （Free Electron Laser）, a compact scheme of FEL injector was proposed. A thermionic cathode was chosen to emit electrons instead of a photo-cathode with its complex structure and high cost. The effective bunch charge was improved to ~200 pC by adopting an enhanced EC-ITC （External Cathode Independently Tunable Cells） RF gun to extract micro-bunches; back bombardment effects were almost eliminated as well. Constant gradient accelerator structures were designed to improve energy to ~14 MeV, while the focusing system was applied for emittance suppressing and bunch state maintenance. The physical design and beam dynamics of the key components for the FEL injector were analyzed. Furthermore, start- to-end simulations with multi-pulses were performed using homemade MATLAB and Parmela. The results show that continual high brightness electron bunches with a low energy spread and emittance could be obtained stably.     

A fast luminosity monitor for BEPCⅡ

The fast luminosity monitor counting the γ photons above a given energy threshold emitted from radiative Bhabha scattering has been operated in the BEPC Ⅱ to measure the relative luminosity bunch by bunch for the first time and used successfully in beam tuning of BEPC Ⅱ. In the relative mode the monitor is able to deliver the relative luminosities with an accuracy of 0.8 %. By steering the electron beam while observing the counting rate changes of the monitor the horizontal and vertical sizes of the bunch spots can be estimated as： Sxe＋ =Sxe =0.356 mm, Sye＋ =Sye- =0.011 mm.     

Ionic conductivity study on electron beam irradiated polyacrylonitrile-polyethylene oxide gel

Different mass percent polyacrylonitrile (PAN)-polyethylene oxide (PEO) gels were prepared and irradiated by an electron beam (EB) with energy of 1.0 MeV to the dose ranging from 13 kGy to 260 kGy.The gels were analysed by using Fourier transform infrared spectrum,gel fraction and ionic conductivity (IC) measurement.The results show that the gel is crosslinked by EB irradiation,the crosslinking degree rises with the increasing EB irradiation dose (ID) and the mass percents of both PAN and PEO contribute a lot to the crosslinking;in addition,EB irradiation can promote the IC of PAN-PEO gels.There exists an optimum irradiation dose,at which the IC can increase dramatically.The IC changes of the PAN-PEO gels along with ID are divided into three regions:IC rapidly increasing region,IC decreasing region and IC balanced region.The cause of the change can be ascribed to two aspects,gel capturing electron degree and crosslinking degree.By comparing the IC-ID curves of different mass percents of PAN and PEO in gel,we found that PAN plays a more important role for gel IC promotion than PEO,since addition of PAN in gel causes the IC-ID curve sharper,while addition of PEO in gel causes the curve milder.     

Design and construction of the first prototype ionization chamber for CSNS and PA beam loss monitor （BLM） system

Design and construction of the first prototype ionization chamber for CSNS and Proton Accelerator （PA） beam loss monitor （BLM） system is reported. The low leakage current （〈0.1 pA）, good plateau （≈800 V） and linearity range up to 200 Roentgen/h are obtained in the first prototype. All of these give us good experience for further improving the ionization chamber construction.     

Temperature dependence of Cu20 orientations in the oxidation of Cu （111）/ZnO （0001） by oxygen plasma

The role of temperature on the oxidation dynamics of Cu20 on ZnO （0001） was investigated during the oxidation of Cu （111）/ZnO （0001） by using oxygen plasma as the oxidant. A transition from single crystalline Cu20 （111） orientation to micro-zone phase separation with multiple orientations was revealed when the oxidation temperature increased above 300 ~ C. The experimental results clearly show the effect of the oxidation temperature with the assistance of oxygen plasma on changing the morphology of Cu （111） film and enhancing the lateral nucleation and migration abilities of cuprous oxides. A vertical top-down oxidation mode and a lateral migration model were proposed to explain the different nucleation and growth dynamics of the temperature-dependent oxidation process in the oxidation of Cu （lll）/ZnO （0001）.