Selective optical generation of coherent acoustic nanocavity modes

Femtosecond pump-probe experiments on a Ga0.85In0.15As nanocavity enclosed by two Ga(0.85)In(0.15)As/AlAs phonon Bragg mirrors reveal selective generation of terahertz confined acoustic modes and regular folded phonons. Selective generation of the confined modes alone is achievable for laser excitation at certain energies below the mirror absorption edges, corresponding to electronic transitions within the cavity layer only. Calculations based on the photoelastic effect explain the experimental results. Decay times of cavity and regular modes evidence longer decay times and anharmonic effects for the cavity mode.     

顶部反射镜对GaN基共振腔发光二极管性能的影响研究

本文在Ga N基共振腔发光二极管(RCLED)顶部设计制备了高反膜结构分布式布拉格反射镜(DBR)和滤波器结构DBR,对比分析了两种反射镜的反射率曲线特征以及对应的RCLED器件的光输出纵模模式、光谱线宽和输出光强等性能差异,详细研究了顶部反射镜的光反射特性对RCLED器件输出光谱性能的影响机理.研究结果表明,顶部反射镜是RCLED的重要组成部分,其反射率曲线特征决定器件的光输出性能.常规高反膜结构DBR顶部反射镜的反射率曲线具有较宽的高反射带,将其作为顶部反射镜可有效压窄RCLED发光纵模线宽,但是发光光谱仍呈现多纵模光输出特征.滤波器结构DBR顶部反射镜的反射率曲线在中心波长处具有较窄的透光凹带,利用透光凹带对输出光的调制作用,器件可实现单纵模光输出,在光通信、光纤传感等领域展示了广阔的应用前景.通过进一步设计RCLED顶部反射镜结构,可以改变其反射率曲线特性,进而优化RCLED器件的输出光谱特性,以满足器件在多个领域的应用需求.     

Design and fabrication of highly dispersive semiconductor double-chirped mirrors

We report on the development of semiconductor double-chirped mirrors with the group delay dispersion of ?3,800 ± 100 fs² in the wavelength range between 1,058 ÷ 1,064 nm and reflectivity of 99.1 %. The simplified plane-wave reflection transfer method was used to design the mirror multilayer stack. The mirror contains an epitaxial AlAs/GaAs structure topped with a SiNx antireflective layer.     

半导体远红外反射镜中反射率和相位研究

以GaAs材料为例，研究了半导体远红外反射镜中的反射率和相位.通过拟合不同掺杂浓度下样品的远红外反射谱，得到了自由载流子的弛豫时间随掺杂浓度变化的经验公式，并把该规律应用到数值计算中.详细讨论了反射镜的结构和材料参数对反射率R和相位φ的影响.根据腔体内吸收率最高的判据得到了最优的反射镜的参数，并计算了这种优化后的反射镜的波长选择特性.最后，通过远红外反射光谱的测量，从实验上验证了这种反射镜的实际效果. 所得结论为半导体远红外器件中的反射镜设计提供了参考. 关键词： 远红外反射镜 反射率 相位     

谐振腔提高横向光电效应的量子效率

根据位置敏感探测器的原理,设计了p-i-n型的谐振腔结构,研究谐振腔提高横向光电效应的量子效率。以一维缺陷光子晶体作为顶部光学镜,底部为分布式Bragg反射镜(DBR),中间为激活介质谐振腔。利用传输矩阵法计算了一维缺陷光子晶体的透射特性。由于顶部和底部结构的高反作用,一维缺陷光子晶体的透射谐振导模将被有效地限制在激活介质中。通过对谐振腔模型的分析,得出了激活介质的量子效率,并进行了数值仿真。结果表明,一维缺陷光子晶体的谐振导模能有效提高谐振腔中激活介质的量子转换效率。     

Large-area broadband saturable Bragg reflectors by use of oxidized AlAs

Broadband saturable Bragg reflectors (SBRs) are designed and fabricated by monolithic integration of semiconductor saturable absorbers with broadband Bragg mirrors. The wet oxidation of AlAs creates low-index AlxOy layers for broadband, high-index-contrast AlGaAs/AlxOy or InGaAlP/AlxOy mirrors. SBR mirror designs indicate greater than 99% reflectivity over bandwidths of 294, 466, and 563 nm for center wavelengths of 800, 1300, and 1550 nm, respectively. Highly strained and unstrained absorbers are stably integrated with the oxidized mirrors. Large-scale lateral oxidation techniques permit the fabrication of SBRs with diameters of 500 microm. Large-area, broadband SBRs are used to self-start and mode lock a variety of laser systems at wavelengths from 800 to 1550 nm.     

入射角对Al0.5Ga0.5As-AlAs分布布拉格反射器反射光谱的影响

采用传输矩阵法对Al0.5Ga0.5As-AlAs材料的发光二极管分布布拉格反射器进行入射角的反射光谱研究,计算发现反射偏振光p和s随入射角的增大呈“V”形变化,在49.8°处有最小反射值。不同入射介质[以空气和限制层(Al0.7Ga0.3)0.5In0.5P材料]下的反射光谱受入射角的影响差异很大,其中入射角对空气入射介质的反射谱影响较小,由0°入射的反射率88.13%降至45°的84.94%,反射峰值波长蓝移仅10 nm;但入射角对(Al0.7Ga0.3)0.5In0.5P入射介质的反射谱影响很大,仅从0°到45°入射,反射率降幅就超过45%,反射峰值波长蓝移超过127 nm。为了减缓这种影响,提出了多波长布拉格反射器结构设计。计算表明多波长分布布拉格反射器在0ο~45°的入射角内比传统的分布布拉格反射器有更好的光谱特性,这对提高发光二极管的出光效率有现实意义。     

新型量子点场效应增强型单光子探测器

针对量子点场效应单光子探测器(QDFET)光吸收效率低下的问题, 提出了一种新型量子点场效应增强型单光子探测器(QDFEE-SPD). QDFEE-SPD增加了共振腔的设计, 并采用了GaAs/AlAs多层膜作为下反射镜; 对QDFEE-SPD的光吸收增强效应和光响应度进行了理论分析和模拟, 结果表明, 与没有共振腔时相比, QDFEE-SPD的吸收效率和光相应度都有了大幅度的提升, 同时为了光吸收的最优化, 吸收层厚度一般应在0.1–0.5 μm; 对QDFEE-SPD的材料样品进行了生长和测试实验, 反射谱测试和PL谱测试结果表明, QDFEE-SPD对入射光的吸收具有了明显的增强效应. 文章成果为高效率量子点场效应单光子探测技术的研究提供了新的思路. 关键词： QDFEE-SPD 共振腔 吸收效率 光吸收增强效应     

基于谐振腔增强型石墨烯光电探测器的设计及性能分析

提出了一种具有超薄有源层的谐振腔增强型石墨烯光电探测器的设计方法,利用谐振腔结构可以将光场限制在腔内,有效增强探测器的吸收.通过研究谐振腔内光场谐振条件及谐振模式下探测器响应度增强的机理,建立了驻波效应下谐振腔增强型石墨烯光电探测器光吸收模型,仿真分析谐振腔反射镜反射率、谐振腔腔长对于腔内光场增强器件性能的影响.理论分析表明,谐振腔增强型石墨烯光电探测器在850 nm处响应度可达0.5 A/W,相比无腔状态下提高了32倍;半高全宽为10 nm.采用谐振腔结构能够提高石墨烯光电探测器件的光电响应,为解决光电探测器响应度与响应速度之间的相互制约关系提供了途径.     

Exchange-mediated anisotropy of (ga,mn)as valence-band probed by resonant tunneling spectroscopy

We report on experiments and theory of resonant tunneling anisotropic magnetoresistance (TAMR) in AlAs/GaAs/AlAs quantum wells (QW) contacted by a (Ga,Mn)As ferromagnetic electrode. Such resonance effects manifest themselves by bias-dependent oscillations of the TAMR signal correlated to the successive positions of heavy (HH) and light (LH) quantized hole energy levels in GaAs QW. We have modeled the experimental data by calculating the spin-dependent resonant tunneling transmission in the frame of the 6 x 6 valence-band k.p theory. The calculations emphasize the opposite contributions of the (Ga,Mn)As HH and LH subbands near the Gamma point, unraveling the anatomy of the diluted magnetic semiconductor valence band.     

温度变化对金属Ag膜反射镜偏振特性的影响研究

空间遥感应用中的光学有效载荷对系统偏振控制提出了越来越高的要求,作为常用的宽光谱反射镜,金属银(Ag)膜反射镜的偏振特性随着环境温度的改变而变化。本文设计并制备了低偏振灵敏度的Ag膜反射镜,研究了反射镜在45°和60°入射角下,从室温25℃升温到150℃时的偏振特性变化和反射光谱变化情况。随着温度的升高,Ag膜的折射率在350~1 200 nm波长范围内有所增加;Ag膜反射镜的反射光中s和p光的相位差Δ在350~600 nm波长范围内减小,在600~650 nm波长范围内基本稳定,在650~1 200 nm波长范围内增大。温度上升到125℃时,Ag膜和反射镜表面形貌发生改变,增加了表面散射和吸收,导致350~900 nm波段反射率降低,在波长350 nm附近的降低约25%。     

Second-harmonic generation in a doubly resonant semiconductor microcavity

We demonstrate second-harmonic generation in a doubly resonant semiconductor microcavity. The monolithic cavity consists of an AlGaAs active medium sandwiched between two AlGaAs/AlAs dual-wavelength mirrors. The mirrors do not have any apparent periodicity because, unlike single- or dual-wavelength Bragg reflectors, they are engineered with dispersion taken into account. Quasi-phase matching is obtained by addition of the appropriate phases at reflection so as to compensate for the dephasing between the fundamental and the second-harmonic fields.     

Gold-reflector-based semiconductor saturable absorber mirror for femtosecond mode-locked Cr4+:YAG lasers

We developed a gold reflector based semiconductor saturable absorber mirror that has a sufficiently high reflectivity and a broad bandwidth and has been used to initiate the mode locking in a Cr⁴⁺:YAG laser. The laser achieved a similar efficiency to the lasers with Bragg-reflector-based semiconductor saturable absorber mirrors, but delivered a much broader spectrum and a shorter pulse.     

太赫兹自由电子激光光腔光子晶体镜的设计

利用传输矩阵法对太赫兹自由电子激光光腔光子晶体镜进行了模拟设计,中心波段在1~3 THz。对光腔镜的光子晶体结构参数如介质厚度、层数、折射率与反射率的关系等进行了研究,并给出了一维光子晶体用于高反镜的设计方法。通过对耦合输出镜光子晶体中引入缺陷层情况的数值模拟,发现通过对缺陷层的调节设计,可以实现耦合输出率的可调谐;并给出了可用于THz 自由电子激光光腔耦合输出镜的调节方法。通过对介质层厚度的调节设计,可以实现反射光谱的整体移动,从而实现宽谱可调谐,扩大了高反镜及耦合输出镜的调节范围。     

Metallic waveguide mirrors in polymer film waveguides

A technology for the fabrication of metallic waveguide mirrors is developed. Plane and curved waveguide mirrors, the latter acting in the same way as cylindrical lenses, are realized in benzocyclobutene (BCB) film waveguides. The waveguide mirror structure is dry-etched into the BCB film waveguide. To enhance the reflectivity of the waveguide mirrors, the waveguide edge is metallized. The BCB film waveguide mirrors are characterized with respect to waveguide attenuation and mirror reflectivity. The waveguide attenuation of the processed BCB waveguide is 0.5 dB/cm. Ag-coated BCB waveguide mirrors show a reflectivity of 71%. The efficiency of total internal reflection (TIR, i.e. in the case without metallization) at the dry-etched waveguide edge is 74%. As an application of the BCB waveguide mirrors a hybrid integrated optical module for Fourier-optical transverse mode selection in broad area lasers (BAL) is proposed. Received: 16 May 2001 / Published online: 23 October 2001     

Etched facet and semiconductor/air DBR facet of a AlGaInP laser diode prepared by focused ion beam milling

The study of focused ion beam (FIB) milling for making etched facet and semiconductor/air distributed Bragg reflector (DBR) facets of AlGaInP-based red laser diodes (LD) is presented in this letter. For the Ga ion beam current of 100 pA at fixed accelerated voltage 30 kV, FIB milling rate of GaAs was found to be 0.46 μm³/nC. As a trade-off between high reflectivity and enough technical tolerance, the combination of third Bragg orders of semiconductor wall and air gap was chosen. The deeply etched mirror and distributed Bragg reflector facet consisting of pairs of semiconductor wall/air gap on laser diodes (LD) cavity facets with vertical sidewall on AlGaInP LDs were fabricated by focused Ga ion beam milling. Comparison of the AlGaInP LD with the mirrors between cleaved and FIB made facet was given and discussed.     

Optical feedback cavity ring-down technique for accurate measurement of ultra-high reflectivity

A novel cavity ring-down (CRD) technique, based on the optical feedback effect of Fabry–Perot diode lasers, is developed for accurate reflectivity measurement of highly reflective cavity mirrors. The strong optical feedback, including the direct reflection from the front cavity mirror of a linear ring-down cavity, is re-injected into the oscillator cavity of the diode laser, and large resonant peaks are observed in the ring-down cavity output signals. The diode laser is switched off by a threshold circuit when the amplitude of a resonant peak exceeds a pre-defined threshold. Exponentially decayed signals recorded immediately after switching off the laser are used to determine the cavity decay time. The ultra-high reflectivity of cavity mirrors is measured to be 99.99606% with a reproducibility of 0.00003%. Compared with the previous phase-shift CRD technique, the signal-to-noise ratio of the cavity output signals is improved with an enhancement factor of over 100.     

CO2的腔增强吸收与高灵敏吸收光谱研究

腔增强吸收光谱(CEAS)是在衰荡吸收光谱的基础上发展起来的一种新型的直接吸收光谱技术.文章报道了用中心输出波长为1.573μm的窄线宽连续可调谐半导体激光器(DFB封装)作光源,用两块高反射率平凹透镜(在1.573μm附近,凹面反射率R～99.4%,曲率半径r～1 m)组成对称共焦腔作吸收池的腔增强吸收光谱系统.采用扫描腔长的方法改变谐振腔的模式,当激光器的输出频率与谐振腔的某一腔模之间满足共振匹配关系时,激光被耦合到谐振腔内,用探测器接收透过谐振腔的光信号,同时用波长计精确测量激光器的输出波长.在33.5 cm长的吸收池内测量了吸收强度为1.816×10-23cm-1·(molecule·cm-2)-1的二氧化碳分子的弱吸收谱线,探测灵敏度达到了6.78×10-7 cm-1.实验结果表明,腔增强吸收光谱具有灵敏度高,装置简单,易于操作等优点.     

Post-growth tailoring of quantum-dot saturable absorber mirrors by chemical etching

We have designed and grown a resonant, low-finesse quantum-dot saturable absorber mirror and subsequently modified the important parameters using chemical etching. The modulation depth and saturation fluence at the design wavelength of 1064 nm were modified by etching the sample to tune the cavity resonance. The device properties were characterised using normal incidence spectroscopic reflectivity measurements, intensity dependent reflectivity measurements and modelled using a transfer matrix approach. The saturable absorber mirror was used to facilitate self-starting, passively mode locked pulses in a neodymium vanadate laser operating at 1064 nm. The etching was found to affect the duration of the pulses, leading to temporal width tuning over a range of 94 ps. The shortest pulse duration of 84 ps was achieved for the cavity resonance close to 1064 nm, with an output power of 3 W. This method is an effective technique for post-growth engineering of the properties of semiconductor saturable absorber mirrors (SESAMs) with nanometre precision.     

Improving attosecond pulse reflection by large angle incidence for periodic multilayer mirror in the extreme ultraviolet region

The improvement of attosecond pulse reflection by large angle incidence for periodic multilayer mirror in the extreme ultraviolet region has been discussed. Numerical simulations of both spectral and temporal reflection characteristics of periodic multilayer mirrors under various incident angles have been analyzed and compared. It was found that the periodic multilayer mirror under larger incidence angle can provide not only higher integrated reflectivity but also broader reflection band with negligible dispersion, making it possible to obtain better reflected pulse that owns higher pulse reflection efficiency and shorter pulse duration for attosecond pulse reflection. In addition, with increasing of incident angle, the promoting of attosecond pulse reflection capability has been proven for periodic multilayer mirrors with arbitrary layers.