锯齿型碳纳米管的结构衍生及电子特性

利用密度泛函理论研究锯齿型单、双壁碳纳米管从核到管状团簇直至纳米管的逐层结构衍生.研究结果表明五边形结构在管状团簇生长中发挥关键作用.此外,基于管状团簇的研究,运用周期性边界条件得到锯齿型单、双壁碳纳米管,并通过计算能带和态密度研究其电子特性.对单壁(n,0)和双壁(n,0)@(2n,0)碳纳米管,当n=3q(q为整数)时,具有金属或窄带隙半导体特性;n?=3q时,具有较宽带隙半导体特性,且带隙随管径的增加而减小.然而,小管径碳纳米管受曲率效应的明显影响,n?=3q的(4,0),(4,0)@(8,0)和(5,0)@(10,0)均呈现金属性;n=3q的(6,0)@(12,0)则表现出明显的半导体特性.     

Structural,electronic,and optical properties of hexagonal and triangular SiC NWs with different diameters

Silicon carbide(SiC) is a wideband gap semiconductor with great application prospects,and the SiC nanomaterials have attracted more and more attention because of their unique photoelectric properties.According to the first-principles calculations,we investigate the effects of diameter on the electronic and optical properties of triangular SiC NWs(T-NWs)and hexagonal SiC NWs(H-NWs).The results show that the structure of H-NWs is more stable than T-NWs,and the conduction band bottom of H-NWs is more and more deviated from the valence band top,while the conduction band bottom of T-NWs is closer to the valence band top.What is more,H-NWs and T-NWs have anisotropic optical properties.The result may be helpful in developing the photoelectric materials.     

ZnO原子链的结构稳定性和电子性质的第一性原理研究

本文采用基于密度泛函理论的第一性原理平面波赝势法,研究了ZnO原子链的结构稳定性和电子性质.结果表明：ZnO分子可以形成直线形结构、梯子形结构以及双梯子形结构等一维链式结构,而之字形链状结构是不能稳定存在的.计算结果也表明：这些稳定存在的一维原子链结构均表现出间接带隙的特征,而之字形结构的原子链却表现出了类似金属的能带特征. 关键词： 原子链 结构稳定性 电子结构 第一性原理计算     

Nb原子链的结构稳定性和电子性质

使用基于密度泛函理论的第一性原理平面波赝势法，研究了Nb原子链的结构稳定性和电子结构性质.计算表明，Nb原子可以形成线性链，平面之字形，二聚化以及梯子形等一系列的一 维链式结构.结果也显示，其中之字形结构最为稳定，其他结构均为亚稳的.通过第一性原理 计算的电子结构和Jahn-Teller效应，讨论了这些结构的相对稳定性以及各链式结构的电子 能带、态密度和电荷密度等性质. 关键词： Nb原子链 结构稳定性 电子结构 从头计算     

单壁碳纳米管电子输运特性的稳定性分析

基于变形单壁碳纳米管能量色散关系,计算了碳纳米管最低导带的电子速度及有效质量随形变系数变化的各种曲线,以此推测碳纳米管输运性质的稳定性问题.计算结果表明：对于特定类型的碳纳米管,只当其形变发生在某特定方向、且处于低形变（形变系数ε≤002 ）区时,电子平均速度v_mean及平均有效质量m^*_mean随形变改变才会很小（相对改变量≤2%）,这意味着此时的碳纳米管低偏压电子输运性能是基本稳定的.而其他形变情形,电子平均速度v_mean或电子平均有效质量m^*_mean或两者随形变变化明显,甚至有跃变,这意味着其低偏压电子输运性能是不稳定的,甚至极不稳定. 关键词： 变形单壁碳纳米管 电子速度 电子有效质量 输运性能稳定性     

表面氢化的双层氮化硼的结构和电子性质

采用第一性原理方法研究了表面氢化的双层氮化硼的结构和电子性质.考虑了表面氢化的双层BN可能存在的六种主要构型,计算结果表明:AB-BN和AA-BN两种构型最为稳定.进一步分析了氢化后的双层BN最稳定构型的能带和电子性质.AB-BN和AA-BN两种构型的原子薄片均为直接带隙半导体,GGA计算的带隙值分别为1.47 eV和1.32 eV.因为GGA通常严重低估带隙值,采用hybrid泛函计算得到带隙值分别为2.52eV和2.34 eV.在最稳定的AB-BN和AA-BN两种构型中,B-N键呈现共价键,而B-H和N-H则具有明显的离子键的特点.在双轴应变下氢化双层BN原子薄片可以被连续地调节带隙,当晶格常数被压缩约8%时,原子薄片由半导体性转变为金属性.     

Two-dimensional square-Au_2S monolayer: A promising thermoelectric material with ultralow lattice thermal conductivity and high power factor

The search for new two-dimensional(2 D) harvesting materials that directly convert(waste) heat into electricity has received increasing attention. In this work, thermoelectric(TE) properties of monolayer square-Au_2S are accurately predicted using a parameter-free ab initio Boltzmann transport formalism with fully considering the spin–orbit coupling(SOC),electron–phonon interactions(EPIs), and phonon–phonon scattering. It is found that the square-Au_2S monolayer is a promising room-temperature TE material with an n-type(p-type) figure of merit ZT = 2.2(1.5) and an unexpected high n-type ZT = 3.8 can be obtained at 600 K. The excellent TE performance of monolayer square-Au_2S can be attributed to the ultralow lattice thermal conductivity originating from the strong anharmonic phonon scattering and high power factor due to the highly dispersive band edges around the Fermi level. Additionally, our analyses demonstrate that the explicit treatments of EPIs and SOC are highly important in predicting the TE properties of monolayer square-Au_2S. The present findings will stimulate further the experimental fabrication of monolayer square-Au_2S-based TE materials and offer an in-depth insight into the effect of SOC and EPIs on TE transport properties.     

CeO2的电子结构，光学和晶格动力学性质：第一性原理研究

基于考虑了Ce-4f电子间的库仑作用U和交换作用J的LDA+U方案,应用第一性原理计算系统研究了CeO₂的电子结构,光学和晶格动力学性质.电荷密度和电子局域函数的分布特征表明,CeO₂是属于共价键的绝缘体.介电常数、玻恩有效电荷张量和声子色散曲线的计算值和相应的实验结果符合得比较好. 关键词： 电子结构 光学性质 晶格动力学 第一性原理计算     

Stability,elastic anisotropy,and electronic properties of Ca_2C_3

The systematic investigations of the mechanical, elastic, and electronic properties, and stability of the newly synthesized monoclinic C2/m-Ca_2C_3 are performed, based on the first-principles calculations. Ca_2C_3 is found to be mechanically and dynamically stable only from 0 GPa to 24 GPa. The elastic anisotropy studies show that Ca_2C_3 exhibits the elastic anisotropy increasing with the augment of pressure. Furthermore, using the HSE06 hybrid functional, the electronic properties of Ca_2C_3 under pressure are calculated. The structure can be regarded as a quasi-direct band gap semiconductor, and the pressure-induced direct-indirect band gap transition is studied in detail.     

First-principles study of structural,elastic, electronic and optical properties of RDX under pressure

ABSTRACT

The influences of pressure on structural, elastic, electronic and optical properties of α-RDX under pressure from 0 to 40?GPa have been investigated by performing first-principles calculations. The obtained structural parameters based on the GGA-PBE+G calculations are consistent with previous experimental values. The results of B/G, C₁₂-C₄₄ and Poisson's ratio show that α-RDX has changed to ductility under pressure between 0 and 5?GPa. The obvious rotation of NO₂ group in the equatorial position appears, especially in the range of pressure from 10 to 15?GPa, which influences the elastic and mechanical properties of α-RDX. Moreover, we find that the electrons of α-RDX become more active under higher pressure by comparing the curves of DOS under different pressure. Furthermore, the anisotropy of optical properties under different pressures has been shown.     

Effect of anionic ordering on the electronic and optical properties of BaTaO_2N:TB-mBJ density functional calculation

This report presents a first-principles investigation of the structural, electronic, and optical properties of perovskite oxynitrides BaTaO_2 N by means of density functional theory(DFT) calculations using the full-potential linearized augmented plane wave(FP-LAPW) method. Three possible structures(P4mm, I4/mmm, and Pmma) are considered according to the TaO_4N_2 octahedral configurations. The calculated structural parameters are found to be in good agreement with the previous theoretical and experimental results. Moreover, the electronic band structure dispersion, total, and partial densities of electron states are investigated to explain the origin of bandgaps and the contribution of each orbital's species in the valence and the conduction bands. The calculated minimum bandgaps of the P4 mm, I4/mmm, and Pmma structures are 1.83 e V, 1.59 e V, and 1.49 e V, respectively. Furthermore, the optical properties represented by the dielectric functions calculated for BaTaO_2 N show that the I4/mmm phase absorbs the light at a large window in both the visible and UV regions,whereas the other two structures(P4mm and Pmma) are more active in the UV region. Our investigations provide important information for the potential application of this material.     

First-principles investigations on structural,elastic, electronic properties and Debye temperature of orthorhombic Ni3Ta under pressure

The structural, elastic, electronic properties and Debye temperature of Ni₃Ta under different pressures are investigated using the first-principles method based on density functional theory. Our calculated equilibrium lattice parameters at 0 GPa well agree with the experimental and previous theoretical results. The calculated negative formation enthalpies and elastic constants both indicate that Ni₃Ta is stable under different pressures. The bulk modulus B, shear modulus G, Young’s modulus E and Poisson’s ratio ν are calculated by the Voigt–Reuss–Hill method. The bigger ratio of B/G indicates Ni₃Ta is ductile and the pressure can improve the ductility of Ni₃Ta. In addition, the results of density of states and the charge density difference show that the stability of Ni₃Ta is improved by the increasing pressure. The Debye temperature Θ _D calculated from elastic modulus increases along with the pressure.     

Structural,elastic, electronic,and thermodynamic properties of MgAgSb investigated by density functional theory

The structural, elastic, electronic, and thermodynamic properties of thermoelectric material Mg Ag Sb in γ, β, α phases are studied with first-principles calculations based on density functional theory. The optimized lattice constants accord well with the experimental data. According to the calculated total energy of the three phases, the phase transition order is determined from α to γ phase with cooling, which is in agreement with the experimental result. The physical properties such as elastic constants, bulk modulus, shear modulus, Young's modulus, Poisson's ratio, and anisotropy factor are also discussed and analyzed, which indicates that the three structures are mechanically stable and each has a ductile feature. The Debye temperature is deduced from the elastic properties. The total density of states(TDOS) and partial density of states(PDOS) of the three phases are investigated. The TDOS results show that the γ phase is most stable with a pseudogap near the Fermi level, and the PDOS analysis indicates that the conduction band of the three phases is composed mostly of Mg-3s,Ag-4d, and Sb-5p. In addition, the changes of the free energy, entropy, specific heat, thermal expansion of γ-MgAgSb with temperature are obtained successfully. The obtained results above are important parameters for further experimental and theoretical tuning of doped MgAgSb as a thermoelectric material at high temperature.     

First-principles calculations of electronic and magnetic properties of CeN： The LDA ＋ U method

Electronic and magnetic properties of CeN are investigated using first-principles calculations based on density func- tional theory （DFT） with the LDA ＋ U method. Our results show that CeN is a half-metal. The majority-spin electron band structure has metallic intersections, whereas the minority-spin electron band structure has a semiconducting gap straddling the Fermi level. A small indirect energy gap occurs between X and W. The calculated magnetic moment is 0.99 μb per unit cell.     

First-principles study of stability of point defects and their effects on electronic properties of GaAs/AlGaAs superlattice

When the GaAs/AlGaAs superlattice-based devices are used under irradiation environments, point defects may be created and ultimately deteriorate their electronic and transport properties. Thus, understanding the properties of point defects like vacancies and interstitials is essential for the successful application of semiconductor materials. In the present study, first-principles calculations are carried out to explore the stability of point defects in GaAs/Al_0.5Ga_0.5As superlattice and their effects on electronic properties. The results show that the interstitial defects and Frenkel pair defects are relatively difficult to form, while the antisite defects are favorably created generally. Besides, the existence of point defects generally modifies the electronic structure of GaAs/Al_0.5Ga_0.5As superlattice significantly, and most of the defective SL structures possess metallic characteristics. Considering the stability of point defects and carrier mobility of defective states, we propose an effective strategy that Al_As, Ga_As, and Al_Ga antisite defects are introduced to improve the hole or electron mobility of GaAs/Al_0.5Ga_0.5As superlattice. The obtained results will contribute to the understanding of the radiation damage effects of the GaAs/AlGaAs superlattice, and provide a guidance for designing highly stable and durable semiconductor superlattice-based electronics and optoelectronics for extreme environment applications.     

Ab initio study of the structural,electronic, elastic and thermal conductivity properties of SrClF with pressure effects

Abstract

SrClF is an important optical crystal and can be used as pressure gauge in diamond anvil cell at high pressure. In this work, we performed a systematic study on the structural, electronic and elastic properties of SrClF under pressure, as well as its thermal conductivity, by first-principles calculation. Different exchange-correlation functionals were tested and PBESOL was finally chosen to study these properties of SrClF. Studies reveal that SrClF has a bulk modulus of about 56.2 GPa (by fitting equation of states) or 54.3 GPa (derived from elastic constants), which agree well with the experimental result. SrClF is mechanically and dynamically stable up to 50 GPa. Its elastic constants increase with the applied pressure, but its mechanical anisotropy deteriorates as the pressure increases. Investigation of its electronic properties reveals that SrClF is a direct band-gap insulator with a gap value of 5.73 eV at 0 GPa, which decreases with the increasing pressure and the reason is found by analysing the partial density of states. Based on the calculated phonon dispersion curves, thermal conductivity of SrClF is predicated. At ambient conditions, the predicted thermal conductivity is about 3.74 Wm^?1 K^?1, while that obtained using the simplified Slack model give a slightly larger value of 4.62 Wm^?1 K^?1.     

闪锌矿结构AlN、AlP、AlAs和AlSb电子结构和光学性质的第一性原理研究

本文采用基于密度泛函理论下的第一性原理平面波赝势从头算量子力学方法,对闪锌矿结构AlN、AlP、AlAs和AlSb的电子结构和光学性质进行了研究.分析比较了这些化合物的能带结构、态密度、介电函数及折射率等性质,总结Al与不同V族元素形成化合物时的性质变化规律.结果表明,四种材料有着相似的能带结构,都是间接带隙宽禁带半导体,但是在导带底AlN的能态结构与其它三种材料明显不同.随着从AlN到AlSb的变化,光学性质曲线向低能端移动(红移趋势).     

闪锌矿GaN弹性性质、电子结构和光学性质外压力效应的理论研究

采用基于密度泛函理论(DFT)的第一性原理平面波赝势方法,结合广义梯度近似(GGA)下的RPBE和局域密度近似(LDA)的CA-PZ交换-关联泛函对闪锌矿结构的GaN在高压的性质进行了系统研究. 计算结果表明:弹性常数、体模量、杨氏模量和能隙都具有明显的外压力效应,计算结果与实验值和理论值很好的符合. 同时利用计算的能带结构和态密度系统分析了GaN的介电函数、折射率、反射率、吸收系数和能量损失函数等光学性质及其外压力效应. 分析结果为GaN的设计与应用提供了理论依据. 关键词： 第一性原理计算 电子结构 光学性质 闪锌矿GaN     

外来原子替代碳的氟化石墨烯的磁性和电子性质

采用基于自旋极化密度泛函理论的第一性原理计算,研究了在氟化石墨烯中少量C原子被M原子(M=B,N,Si,P)替代后原子片的磁性和电子性质.结果表明:不同原子掺杂后的氟化石墨烯的电子结构会发生很大的变化,并有很大的不同.掺杂B和P原子后,纳米原子片由半导体转变为金属,并且由非磁性转变为磁性;掺杂N原子后,材料则仍为半导体,但具有磁性;进一步讨论了掺杂原子浓度与磁性的关系.对于Si原子掺杂的氟化石墨烯原子片,其半导体性质不变,但禁带宽度也会发生改变.     

The stabilities, electronic structures and elastic properties of Rb-As systems

The structural, electronic and elastic properties of Rb–As systems (RbAs in NaP, LiAs and AuCu structures, RbAs2 in the MgCu2 structure, Rb3 As in Na3As, Cu3 P and Li3Bi structures, and Rb5 As4 in the A5B4 structure) are investigated with the generalized gradient approximation in the frame of density functional theory. The lattice parameters, cohesive energies, formation energies, bulk moduli and the first derivatives of the bulk moduli (to fit Murnaghan’s equation of state) of the considered structures are calculated and reasonable agreement is obtained. In addition, the phase transition pressures are also predicted. The electronic band structures, the partial densities of states corresponding to the band structures and the charge density distributions are presented and analysed. The second-order elastic constants based on the stress-strain method and other related quantities such as Young’s modulus, the shear modulus, Poisson’s ratio, sound velocities, the Debye temperature and shear anisotropy factors are also estimated.