(GaMn)As体系中Mn无序对其电子结构及磁性影响的第一性原理研究

关键词：     

(Ga,Mn)As 体系中Mn自补偿效应的第一性原理研究

基于密度泛函理论的赝势平面波方法计算了处于填隙位置磁性原子(MnI)对(Ga,Mn) As体系电子结构和磁性的影响. 计算结果表明MnI在GaAs中是施主;代替Ga位的MnGa 与MnI的自旋按反铁磁序排列;静电相互作用使MnGa,MnI倾向于形成MnGa_MnI对. MnI的存在一方面补偿了(Ga,Mn)As中的空穴,降低了空穴浓度;同时还使邻近的MnG a失活. MnI的存在对获得高居里温度的(Ga,Mn)As是极为不利的. 关键词：(GaMn)As稀磁半导体密度泛函理论     

稀磁半导体(Ga,Mn)As薄膜激光诱导超快磁化动力学过程拟合方法探究

本文对稀磁半导体(Ga, Mn)As薄膜中超快激光诱导磁化动力学响应信号的不同拟合方法进行了对比分析. 通过Landau-Lifshitz-Gilbert(LLG)方程的数值拟合发现, 由于薄膜平面内和平面外磁光响应强度不同, 磁矢量三维进动的叠加可以导致多个频率振动模式的假象. 当使用高于(Ga, Mn)As带边的能量激发时, 磁化进动的磁光响应信号中叠加着来自光极化载流子的响应, 此时单纯利用LLG方程对薄膜整体磁化动力学过程拟合应谨慎使用. 本工作为正确分析和理解脉冲激光对(Ga, Mn)As铁磁性的超快调控提供了拟合方法上的指导.     

Spin-wave resonance as a tool for probing surface anisotropies in ferromagnetic thin films: Application to the study of (Ga,Mn)As

In this paper we provide a concise review of present achievements in the study of spin-wave resonance (SWR) in ferromagnetic semiconductor (Ga,Mn)As thin films. The theoretical treatment of the experimental SWR data obtained so far concentrates specifically on the spherical surface pinning (SSP) model, in which the surface spin pinning energy is expressed by configuration angles (the out-of-plane polar angle $?$ and the in-plane azimuthal angle $\phi$) defining the direction of surface magnetization in the considered thin film. The model is based on a series expansion of the surface spin pinning energy; the terms in the series represent the respective pinning contributions from the cubic anisotropy as well as uniaxial anisotropies. Comparing theory with the reported experimental studies of SWR in thin films of the ferromagnetic semiconductor (Ga,Mn)As, we find that besides the first-order cubic anisotropy, higher-order cubic anisotropies (in the second and third orders) as well as uniaxial anisotropies (perpendicular in the first and second orders, and in-plane diagonal) occur on the surface of this material. We use our results to plot a 3D hypersurface visualizing the angle dependence of the surface spin pinning energy in configurational space. An advantage of this spatial representation is that the shape of the obtained hypersurface allows us to predict new SWR effects that have not yet been observed experimentally. Prospective experimental studies for the verification of this surface pinning model would bring new insight into the surface anisotropy phenomenon in (Ga,Mn)As thin films and help complete the knowledge in this field, the shortage of which in the literature available to date is becoming bothersome.     

Magnetic Impurity Band and Photoinduced Magnetic Phase Transition in Diluted Magnetic Semiconductors

Applying the dynamical coherent potential approximation (dynamical CPA) to a model of diluted magnetic semiconductors (DMSs), in which both random impurity distribution and thermal fluctuation of localized spins are taken into account, the spin-polarized band and the carrier spin polarization are calculated for various magnetizations. In order to clarify the role of impurity depth on the occurrence of ferromagnetism, three typical cases are investigated: (a) II-VI DMS, (b) deep impurity level, and (c) strong exchange interaction. The present study reveals that the impurity depth of magnetic ions strongly enhances the carrier spin polarization (CSP) and accordingly, leads to a high Curie temperature. This means that photoinduced ferromagnetism with high Curie temperature can be expected in a DMS with a deep impurity depth and strong exchange interaction.     

Annealing effect on magnetic anisotropy in ultrathin（Ga,Mn）As

We investigated the effect of low temperature annealing on magnetic anisotropy in 7-nm ultrathin Ga0.94Mn0.06As devices by measuring the angle-dependent planar Hall resistance(PHR).Obvious hysteresis loops were observed during the magnetization reversal through the clockwise and counterclockwise rotations under low magnetic fields(below 1000 Gs,1 Gs = 10-4 T),which can be explained by competition between Zeeman energy and magnetic anisotropic energy.It is found that the uniaxial anisotropy is dominant in the whole measured ferromagnetic range for both the as-grown ultrathin Ga0.94Mn0.06As and the annealed one.The cubic anisotropy changes more than the uniaxial anisotropy in the measured temperature ranges after annealing.This gives a useful way to tune the magnetic anisotropy of ultrathin(Ga,Mn)As devices.     

Room-temperature anomalous Hall effect and magnetroresistance in (Ga, Co)-codoped ZnO diluted magnetic semiconductor films

This paper reports that the(Ga,Co)-codoped ZnO thin films have been grown by inductively coupled plasma enhanced physical vapour deposition.Room-temperature ferromagnetism is observed for the as-grown thin films.The x-ray absorption fine structure characterization reveals that Co 2+ and Ga 3+ ions substitute for Zn 2+ ions in the ZnO lattice and exclude the possibility of extrinsic ferromagnetism origin.The ferromagnetic(Ga,Co)-codoped ZnO thin films exhibit carrier concentration dependent anomalous Hall effect and positive magnetoresistance at room temperature.The mechanism of anomalous Hall effect and magneto-transport in ferromagnetic ZnO-based diluted magnetic semiconductors is discussed.     

Fabrication and electrical properties of axial and radial GaAs nanowire pn junction diode arrays

We report on the fabrications and characterizations of axial and radial Ga As nanowire pn junction diode arrays.The nanowires are grown on n-doped Ga As（111）B substrates using the Au-catalyzed vapor–liquid–solid mechanism by metal–organic chemical vapor deposition（MOCVD）. Diethyl–zinc and silane are used as p- and n-type dopant precursors,respectively. Both the axial and radial diodes exhibit diode-like J–V characteristics and have similar performances under forward bias. Under backward bias, the axial diode has a large leakage current, which is attributed to the bending of the pn junction interface induced by two doping mechanisms in Au-catalyzed nanowires. The low leakage current and high rectification ratio make the radial diode more promising in electrical and optoelectronic devices.     

室温下(Ga,Mn)As中载流子的自旋弛豫特性

运用飞秒时间分辨抽运-探测克尔光谱技术,研究了室温下退火及未退火(Ga,Mn)As的载流子自旋弛豫的激发能量密度依赖性,发现电子自旋弛豫时间随激发能量密度增加而增大,而在同一激发能量密度下,退火样品比未退火样品具有更短的载流子复合时间、电子自旋弛豫时间和更大的克尔转角,显示DP机理是室温下(Ga,Mn)As的电子自旋弛豫的主导机理.退火(Ga,Mn)As的超快克尔增强效应显示其在超高速全光自旋开关方面的潜在应用价值,也为(Ga,Mn)As铁磁性起源的p-d交换机理提供了证据.关键词：(GaMn)As稀磁半导体时间分辨克尔光谱电子自旋弛豫DP机理     

Concentration Dependence of Room Temperature Magnetic Ordering in Dilute Fe: Ge1 − x Te x Alloy

Hyperfine interaction techniques like Mossbauer spectroscopy are very sensitive tools to study the local probe interactions in dilute magnetic semiconductors. We report here a Mossbauer study on the concentration dependence in Fe_0.008Ge_{1 − x} Te _x for x = 0, 0.008, 0.016, 0.03 and 0.05. At room temperature magnetic interactions were observed for all concentrations of Te and the population of magnetic site was found to increase gradually with the Te concentration. A constant magnetic hyperfine field of 136 KOe was found. A quadrupole doublet due to the FeTe₂ compound phase was also seen.     

Magnetic properties of Co-doped SnO: first-principles calculations

Based on density functional theory calculations,the electronic and magnetic properties of Co-doped SnO are investigated.It is found that the spin-polarized state,with a magnetic moment of about 1.0 μ B per Co-dopant,is more favorable in energy than the non-spin-polarized state.Moreover,the origin of the ferromagnetism in Co-doped SnO is found to be the double exchange mechanism.Our results indicate that Co-doped SnO is a possible candidate of the p-type spintronics material.     

Mn掺杂对ZnO∶Mn薄膜结构特性的影响

利用射频磁控溅射方法在玻璃衬底上室温沉积了一系列不同Mn掺杂的ZnO∶Mn薄膜。结合Raman光谱,XRD谱和SEM分析了ZnO∶Mn薄膜的结构特性。Raman拟合结果显示,在Mn摩尔分数从0增加到5.6%的过程中,ZnO∶Mn薄膜始终保持着六角纤锌矿结构;随着Mn掺杂浓度的增大,437 cm-1和527 cm-1位置上的Raman散射峰出现红移现象,说明Mn掺杂量的增加导致晶格更加无序,缺陷增多;当Mn摩尔分数达到15.8%时,647 cm-1处的Raman散射峰出现,暗示了MnO的产生,同时薄膜结晶质量变差。这一结论也得到了XRD和SEM结果的支持。     

Electronic structure of p-type (Ga,Fe)N diluted magnetic semiconductors

By ab-initio calculation we show that the (Ga,Fe)N ground state may be changed from anti-ferromagnetic to ferromagnetic by acceptor defect like Ga vacancies. The electronic structures are calculated by using the Korringa-Kohn-Rostoker (KKR) method combined with coherent potential approximation (CPA). We show that we can increase the magnetic moment of Fe in p-type GaN by oxygen co-doping. Mechanism of exchange interactions between magnetic ions in p-type (Ga,Fe)N is also studied. The effect of external magnetic field on the electronic structure of (Ga, Fe)N and p-type (Ga, Fe)N is investigated.