Study on gamma response function of E J301 organic liquid scintillator with GEANT4 and FLUKA

The gamma response function is required for energy calibration of EJ301 （5 cm in diameter and 20 cm in height） organic liquid scintillator detector by means of gamma sources. The GEANT4 and FLUKA Monte Carlo simulation packages were used to simulate the response function of the detector for standard 22Na, 60Co, 137Cs gamma sources. The simulated results showed a good agreement with experimental data by incorporating the energy resolution function to simulation codes. The energy resolution and the position of the maximum Compton electron energy were obtained by comparing measured light output distribution with simulated one. The energy resolution of the detector varied from 21.2% to 12.4% for electrons in the energy region from 0.341 MeV to 1.12 MeV. The accurate position of the maximum Compton electron energy was determined at the position 81% of maximum height of Compton edges distribution. In addition, the relation of the electron energy calibration and the effective neutron detection thresholds were described in detail. The present results indicated that both packages were suited for studying the gamma response function of EJ301 detector.     

Specific Heat and Charge Density of Quasi-One-Dimensional Interchain Coupling Organic Ferromagnets

On the basis of a generalized SSH model, an organic polymer ferromagnet theory is proposed at the finite temperature in the self-consistent mean field approximation, and the specific heat and charge density of the quasione-dimensional interehain coupling organic ferromagnets are presented. We find that an obvious feature is to present itself the round peak for the specific heat with the temperature. This indicates unambiguously the presence of the phase transition in the system. The transition temperature plays down with increasing of the interchain coupling t2 or decreasing of the electron repulsion u. The curves of charge density with the temperature debase monotonously. This result illustrates that the higher the temperature is, the more electrons are excited.     

Low-leakage-current AIGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

High-performance low-leakage-current A1GaN/GaN high electron mobility transistors （HEMTs） on silicon （111） sub- strates grown by metal organic chemical vapor deposition （MOCVD） with a novel partially Magnesium （Mg）-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally onμe. A 1μ m gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10-8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown A1GaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μ m gate length T-shaped gate HEMTs were also investigated.     

Improved device reliability in organic light emitting devices by controlling the etching of indium zinc oxide anode

A controllable etching process for indium zinc oxide （IZO） films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electrode with smoothed surface morphology and slope edge was achieved. For the practical application in organic light emitting devices （OLEDs）, a sup- pression of the leak current in the current-voltage characteristics of OLEDs was observed. It resulted in a 1.6 times longer half lifetime in the IZO-based OLEDs compared to that using an indium tin oxide （ITO） anode etched by a conventional strong etchant of aqua regia.     

Significant performance enhancement in A1GaN/GaN high electron mobility transistor by high-κ organic dielectric

The electrical properties of A1GaN/GaN high electron mobility transistor （HEMT） with and without high-κ organic dielectrics are investigated. The maximum drain current ID max and the maximum transconductance gm max of the organic dielectric/A1CaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare A1GaN/GaN HEMT, respectively. Both the threshold voltage VT and gm max of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the A1GaN/GaN HEMT by introducing the high-κ organic dielectric.     

Spin-Polarized Carriers Injection from Ferromagnetic Metal into Organic Semiconductor

Charge carriers in organic semiconductor are different from that of traditional inorganic semiconductor. Based on three-current model, considering electrical field effect, we present a theoretical model to discuss spin-polarized injection from ferromagnetic electrode into organic semiconductor by analyzing electrochemical potential both in ferromagnetic electrode and organic semiconductors. The calculated result of this model shows effects of electrode＇s spin polarization, equilibrium value of polarons ratio, interracial conductance, bulk conductivity of materials and electrical field. It is found that we could get decent spin polarization with common ferromagnetic electrode by increasing equilibrium value of polarons ratio. We also find that large and matched bulk conductivity of organic semiconductor and electrode, small spin-dependent interracial conductance, and enough large electrical field are critical factors for increasing spin polarization.     

Properties of transistor based C60 thin film on polystyrene

This paper reports that the n-type organic thin-fihn transistors have been fabricated by using C60 as the active layer and polystyrene as the dielectric. The properties of insulator and the growth characteristic of C60 film were carefully investigated. By choosing different source/drain electrodes, a device with good performance can be obtained. The highest electron field effect mobility about 1.15 cm2/（V. s） could reach when Barium was introduced as electrodes. Moreover, the C60 transistor shows a negligible ＇hysteresis effect＇ contributed to the hydroxyl-free of insulator. The result suggests that polymer dielectrics are promising in applications among n-type organic transistors.     

Improved light extraction of organic light emitting diodes with a nanopillar pattering structure

We have investigated the properties of organic light emitting diodes(OLEDs)with a nanopillar patterning structure at organic–metal or organic–organic interfaces.The results demonstrate that the introduction of a nanopillar structure can improve the light extraction efficiency greatly.We also find that the number,height,and position of nanopillars all affect the light extraction of OLEDs.The maximum power efficiency of a device with an optimized nanopillar patterning mode can be improved to 2.47 times that of the reference device.This enhancement in light extraction originates from the improved injected carriers,the broadened charge recombination zone,and the intensified wave guiding effects.     

F4-TCNQ concentration dependence of the current-voltage characteristics in the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） Schottky barrier diode

In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （Au/P3HT：PCBM：F4-TCNQ/n- Si） metal-polymer-semiconductor （MPS） Schottky barrier diode （SBD） in terms of the effects of F4-TCNQ concentration （0%, 1%, and 2%）. F4-TCNQ-doped P3HT：PCBM is fabricated to figure out the p-type doping effect on the device per- formance. The main electrical parameters, such as ideality factor （n）, barrier height （ФB0）, series resistance （Rs）, shunt resistance （Rsh）, and density of interface states （Nss） are determined from the forward and reverse bias current-voltage （l-V） characteristics in the dark and at room temperature. The values of n, Rs, ФB0, and Nss are significantly reduced by using the 1% F4-TCNQ doping in P3HT：PCBM：F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft （1%） doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping （2%） become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT：PCBM：F4-TCNQ organic layer. Moreover, the soft F4-TCNQ dop- ing concentration （1%） in P3HT：PCBM：F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.     

High performance pentacene organic field-effect transistors consisting of biocompatible PMMA/silk fibroin bilayer dielectric

Pentacene organic field-effect transistors （OFETs） based on single- or double-layer biocompatible dielectrics of poly（methyl methacrylate） （PMMA） and/or silk fibroin （SF） are fabricated. Compared with those devices based on sin- gle PMMA or SF dielectric or SF/PMMA bilayer dielectric, the OFETs with biocompatible PMMA/SF bilayer dielectric exhibit optimal performance with a high field-effect mobility of 0.21 cm2/Vs and a current on/off ratio of 1.5 × 104. By investigating the surface morphology of the pentacene active layer through atom force microscopy and analyzing the elec- trical properties, the performance enhancement is mainly attributed to the crystallization improvement of the pentacene and the smaller interface trap density at the dielectric/organic interface. Meanwhile, a low contact resistance also indicates that a good electrode/organic contact is formed, thereby assisting the performance improvement of the OFET.     

Finite-field calculation of electric quadrupole moments of ~2P_(3/2),~2D_(3/2,5/2),and ~2F_(5/2,7/2) states for Yb~+ ion

Electric quadrupole moments of low-lying excited states of Yb~+ are calculated by relativistic coupled-cluster theory with perturbations from external fields.The field-dependent energy differentiation provides accurate values of the electric quadrupole moments o f~2P_(3/2),~2D_(3/2,5/2),and~2F_(5/2,7/2) states which agree well with experimental values.The important role of the electronic correlation to the electric quadrupole moments is investigated.Our calculations indicate the early dispute of the electric quadrupole moment of the Yb~+(~2F_(7/2))state for which the measured and theoretical values have a large discrepancy.These electric quadrupole moment values can help us to determine the electric quadrupole shifts in start-of-the-art experiments of the Yb~+ ion.     

Low-temperature spin diffusion in a highly ideal S=1/2 Heisenberg antiferromagnetic chain studied by muon spin relaxation

The organic radical-ion salt DEOCC-TCNQF4 contains linear chains of stacked molecules with significant Heisenberg antiferromagnet interactions along the chain and extremely weak interactions between the chains. Zero-field muSR has confirmed the absence of long-range magnetic order down to 20 mK and field-dependent muSR is found to be consistent with diffusive motion of the spin excitations. The anisotropic spin dynamics and the upper boundary for magnetic ordering temperature both indicate interchain magnetic coupling /J'/<7 mK. As the intrachain coupling J is 110 K, /J'/J/ is significantly less than 10(-4). This system therefore provides one of the most ideal examples of the one-dimensional S=1/2 Heisenberg antiferromagnet yet discovered.     

Remarks on interpretations of the Eotvos experiment and misinterpretation of E=mc^2

The Eotvos experiment on the verification of equivalence between inertial mass and gravitational mass of a body is famous for its accuracy. A question is, however, can these experimental results be applied to the case of a physical space in general relativity, where the space coordinates could be arbitrary？ It is pointed out that it can be validly applied because it has been proven that Einstein＇s equivalence principle for a physical space must have a frame of reference with the Euclidean-like structure. Will claimed further that such an overall accuracy can be translated into an accuracy of the equivalence between inertial mass and each type of energy. It is shown that, according to general relativity, such a claim is incorrect. The root of this problem is due to an inadequate understanding of special relativity that produced the famous equation E=mc^2, which must be understood in terms of energy conservation. Concurrently, it is pointed out that this error is a problem in Will＇s book, ‘Theory and Experiment in Gravitational Physics＇.     

Metric of States

Metric of quantum states plays an important role in quantum information theory. In this letter, we find the deep connection between quantum logic theory and quantum information theory. Using the method of quantum logic, we can get a famous inequality in quantum information theory, and we answer a question raised by S. Gudder.     

Design and construction progress of BRIF

A new RIB project, the Beijing Radioactive Ion-beam Facility （BRIF）, has been running at CIAE since 2004. In this project, a 100 MeV H-cyclotron, CYCIAE-100, is selected as the driving accelerator providing a 75-100 MeV, 200-500 μA proton beam. An ISOL system employs two stage separators to reach the mass resolution of 20000. Its RIB beam will be injected into the existing Tandem and a superconducting booster installed down stream of the Tandem will increase the energy by 2 MeV/q. The progress of BRIF, giving special emphasis to CYCIAE-100, will be introduced in this paper.     

Effect of high temperature band gap of GaN annealing on strain and nanoparticles

<正>Black-coloured GaN nanoparticles with an average grain size of 50 nm have been obtained by annealing GaN nanoparticles under flowing nitrogen at 1200℃for 30 min.XRD measurement result indicates an increase in the lattice parameter of the GaN nanoparticles annealed at 1200℃,and HRTEM image shows that the increase cannot be ascribed to other ions in the interstitial positions.If the as-synthesised GaN nanoparticles at 950℃are regarded as standard,the thermal expansion changes nonlinearly with temperature and is anisotropic;the expansion below 1000℃is smaller than that above 1000℃.This study provides an experimental demonstration for selecting the proper annealing temperature of GaN.In addition,a large blueshift in optical bandgap of the annealed GaN nanoparticles at 1200℃is observed,which can be ascribed to the dominant transitions from the C（Γ₇） with the peak energy at 3.532 eV.     

Perturbation of Symmetries and Mei Adiabatic Invariants of Nonholonomic Systems with Servoconstraints

The perturbation of symmetries and Mei adiabatic invariants of nonholonomic systems with servoconstraints are studied. The exact invariants in the form of Mei conserved quantities introduced by the Mei symmetry of nonholonomic systems with servoconstraints without perturbations are given. Based on the definition of higher-order adiabatic invariants of mechanical systems, the perturbation of Mei symmetries for nonholonomic .systems with servoconstraints under the action of small disturbance is investigated, and Mei adiabatic invatiants of the system are obtained. An example is given to illustrate the application of the results.     

Beam tail effect of a performance-enhanced EC-ITC RF gun

The beam tail effect of multi-bunches will influence the electron beam performance in a high intensity thermionic RF gun. Beam dynamic calculations that illustrate the working states of single beam tail and multi-pulse feed-in of a performance-enhanced EC-ITC （external cathode independent tunable cavity） RF gun for an FEL （free electron laser） injector are performed to estimate the extracted bunch properties. By using both Parmela and homemade MATLAB codes, the effects of a single beam tail as well as interactions of multi-pulses are analyzed, where a ring-based electron algorithm is adopted to calculated RF fields and the space-charge field. Furthermore, the procedure of unexpected deviated-energy particles mixed with an effective bunch head is described by the MATLAB code as well. As a result, the performance-enhanced EC-ITC RF gun is proved to have the capability to extract continual stable bunches suitable for a high requirement THz-FEL.     

Calibration of RPC-based muon detector at BESⅢ

The calibration algorithm for RPC-based muon detector at BESIII has been developed. The calibration method, calibration error and algorithm performance are studied. The primary results of efficiency and noise at layer, module and strip levels have been calibrated with cosmic ray data. The calibration constants are available for simulation and reconstruction tuning. The results of Monte Carlo and data are also compared to check the validation and reliability of the algorithm.     

Status of KLOE-2

In a few months the KLOE-2 detector is expected to start data taking at the upgraded DAФNE φ-factory of INFN Laboratori Nazionali di Frascati. It aims to collect 25 fb^-1 at the φ（1020） peak, and about 5 fb^-1 in the energy region between 1 and 2.5 GeV. We review the status and physics program of the project.