Semi‐empirical inelastic mean free paths for positrons

Previously, we developed a semi‐empirical method for determining the inelastic mean free paths of positrons in a wide variety of materials. This work is heavily based on the earlier work of Tanuma, Powell and Penn on the inelastic mean free paths of electrons in the 50–2000 eV energy range. One of the remaining questions still to be answered was the validity of ignoring terms of the order of the inverse energy squared in the denominator of our final expression. In this paper, we investigate this question in some detail by comparing our approximations with calculated values of the positron inelastic mean free paths based on experimental optical data. We conclude that the exclusion of the higher order terms is consistent with the other approximations in this methodology. Copyright © 2005 John Wiley & Sons, Ltd.     

Calculations of electron inelastic mean free paths

We report calculations of electron inelastic mean free paths (IMFPs) for 50–2000 eV electrons in 14 elemental solids (Li, Be, diamond, graphite, Na, K, Sc, Ge, In, Sn, Cs, Gd, Tb, and Dy) and for one solid (Al) using better optical data than in our previous work. The new IMFPs have also been used to test our TPP‐2M equation for estimating IMFPs in these materials. We found surprisingly large root‐mean‐square (RMS) deviations (39.3–71.8%) between IMFPs calculated from TPP‐2M and those calculated here from optical data for diamond, graphite and cesium; previously we had found an average RMS deviation of 10.2% for a group of 27 elemental solids. An analysis showed that the large deviations occurred for relatively small computed values of the parameter β in the TPP‐2M equation (β ～ 0.01 for diamond and graphite) and also for relatively large values of β (β ～ 0.25 for Cs). Although such extreme values of β are unlikely to be encountered for many other materials, the present results indicate an additional limitation in the reliability of the TPP‐2M equation. We also show that the parameter N_v in the TPP‐2M equation should be computed for the rare‐earth elements from the number of valence electrons and the six 5p electrons. Copyright © 2004 John Wiley & Sons, Ltd.     

Comparison of energy‐loss functions from REELS spectra with surface and bulk energy loss functions for Ag

Effective energy‐loss functions were derived from the reflection electron energy‐loss spectroscopy (REELS) spectra of Ag by an extended Landau approach. The effective energy‐loss functions obtained are close to the surface energy‐loss function in the low‐energy‐loss region, but tend to be closer to the bulk energy‐loss function in the higher energy‐loss region for higher primary energy. The REELS spectra incorporating the effective energy‐loss function are also reproduced in a Monte‐Carlo simulation model and confirm that the simulation reproduces the experimental REELS spectra with considerable success. Copyright © 2003 John Wiley & Sons, Ltd.     

Local inverse inelastic mean free path at interface

We calculated a local inverse inelastic mean free path (local-IIMFP) for electrons crossing a medium–medium interface, considering various incident electron energies, crossing angles and combinations of materials. We used an extension of a classical dielectric model developed by Li and co-workers for an electron crossing a surface (interface vacuum-medium). Moreover, the integration over the distance of the local-IIMFP allows to obtain the interface excitation parameter (or IEP) characterizing the change in excitation probability for an electron crossing an interface once caused by the presence of the interface in comparison with an electron for which only volume excitations are considered. We perform these calculations for angles between 0° and 80°, for electron energies between 500 and 2500 eV and for various pairs of materials, as Al/In for its academic interest or Au/Si and SiO₂/Si for their technological importance. Small but not negligible variations of the local-IIMFP and the IEP were observed for metal–metal or metal–semiconductor interfaces, while quite significant variations are obtained when one of the materials is a insulator.     

Inelastic mean free path of low‐energy electrons in condensed media: beyond the standard models

The most established approach for ‘practical’ calculations of the inelastic mean free path (IMFP) of low‐energy electrons (~10 eV to ~10 keV) is based on optical‐data models of the dielectric function. Despite nearly four decades of efforts, the IMFP of low‐energy electrons is often not known with the desired accuracy. A universal conclusion is that the predictions of the most popular models are in rather fair agreement above a few hundred electron volts but exhibit considerable differences at lower energies. However, this is the energy range where their two main approximations, namely, the random‐phase approximation (RPA) and the Born approximation, may be invalid. After a short overview of the most popular optical‐data models, we present an approach to include exchange and correlation (XC) effects in IMFP calculations, thus going beyond the RPA and Born approximation. The key element is the so‐called many‐body local‐field correction (LFC). XC effects among the screening electrons are included using a time‐dependent local‐density approximation for the LFC. Additional XC effects related to the incident and struck electrons are included through the vertex correction calculated using a screened‐Hubbard formula for the LFC. The results presented for liquid water reveal that XC may increase the IMFP by 15–45% from its Born–RPA value, yielding much better agreement with available experimental data. The present work provides a manageable, yet rigorous, approach to improve upon the standard models for IMFP calculations, through the inclusion of XC effects at both the level of screening and the level of interaction. Copyright © 2015 John Wiley & Sons, Ltd.     

An accurate and simple universal curve for the energy‐dependent electron inelastic mean free path

The values of inelastic mean free paths (IMFPs) calculated from optical data for the three material categories of elements, inorganic compounds and organic compounds are re‐assessed to provide a simple equation giving an estimate of the IMFP, knowing only the identities of the elements in an analysed layer and the atomic density of that layer. This simple equation is required for quantification of the thicknesses for layers of mixed elements in which the required parameters for use of the popular equation, TPP‐2M, are insufficiently known. It describes the published values, calculated from optical data for energies above 100 eV, to a similar root mean square (RMS) deviation as that for TPP‐2M in the three material categories. The RMS deviation for all three categories averages 8.4%, provided the inorganic data are ‘corrected’ for the published sum rule errors. If, in an analysed layer, only elements are identified and the atomic density is unknown, i.e. only the average Z value of the layer is known, a simpler relation is provided for the IMFP in monolayers with only one unknown parameter Z that exhibits an RMS deviation from the IMFPs calculated from optical data of 11.5%. Copyright © 2011 Crown copyright.     

Analysis of Fe-Si layered structures by reflected electron energy loss spectroscopy and inelastic scattering cross-section

This paper reports on our study of the formation of an interface of layered structures in the Fe-Si system by reflected electron energy loss spectroscopy (REELS). Quantitative element analysis was performed using the product of the mean length of the inelastic free path by the inelastic scattering cross-section of electrons. It is shown that the Fe-Si interface is quite uniform.     

Calculations of electron inelastic mean free paths. X. Data for 41 elemental solids over the 50 eV to 200 keV range with the relativistic full Penn algorithm

We have calculated inelastic mean free paths (IMFPs) for 41 elemental solids (Li, Be, graphite, diamond, glassy C, Na, Mg, Al, Si, K, Sc, Ti, V, Cr, Fe, Co, Ni, Cu, Ge, Y, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Cs, Gd, Tb, Dy, Hf, Ta, W, Re, Os, Ir, Pt, Au, and Bi) for electron energies from 50 eV to 200 keV. The IMFPs were calculated from measured energy loss functions for each solid with a relativistic version of the full Penn algorithm. The calculated IMFPs could be fitted to a modified form of the relativistic Bethe equation for inelastic scattering of electrons in matter for energies from 50 eV to 200 keV. The average root‐mean‐square (RMS) deviation in these fits was 0.68%. The IMFPs were also compared with IMFPs from a relativistic version of our predictive Tanuma, and Powell and Penn (TPP‐2M) equation that was developed from a modified form of the relativistic Bethe equation. In these comparisons, the average RMS deviation was 11.9% for energies between 50 eV and 200 keV. This RMS deviation is almost the same as that found previously in a similar comparison for the 50 eV to 30 keV range (12.3%). Relatively large RMS deviations were found for diamond, graphite, and cesium as in our previous comparisons. If these three elements were excluded in the comparisons, the average RMS deviation was 8.9% between 50 eV and 200 keV. The relativistic TPP‐2M equation can thus be used to estimate IMFPs in solid materials for energies between 50 eV and 200 keV. We found satisfactory agreement between our calculated IMFPs and those from recent calculations and from measurements at energies of 100 and 200 keV. Copyright © 2015 John Wiley & Sons, Ltd.     

Construction of database of effective energy‐loss functions

Effective energy‐loss functions for Al, Cu, Ag and Au were derived from the reflection electron energy‐loss spectroscopy (REELS) spectra for 1 keV electrons using extended Landau theory. Features of the obtained effective energy‐loss functions are close to those of optical surface energy‐loss functions, revealing the significant contribution of the low energy loss below a few tens of electron‐volts in the REELS spectrum for Cu, Ag and Au. The REELS spectra were reproduced using the newly derived effective energy‐loss functions, leading to the confirmation that this type of database of the effective energy‐loss function is very useful not only for more comprehensive understanding of the measured spectrum of surface electron spectroscopies but also for practical background subtraction in surface electron spectroscopy. Copyright © 2003 John Wiley & Sons, Ltd.     

Obtaining quantitative information on surface excitations from reflection electron energy‐loss spectroscopy (REELS)

A new analysis of reflection electron energy‐loss spectroscopy (REELS) spectra is presented. Assuming inelastic scattering in the bulk to be quantitatively understood, this method provides the distribution of energy losses in a single surface excitation in absolute units without the use of any fitting parameters. For this purpose, REELS spectra are decomposed into contributions corresponding to surface and volume excitations in two steps: first the contribution of multiple volume excitations is eliminated from the spectra and subsequently the distribution of energy losses in a single surface scattering event is retrieved. This decomposition is possible if surface and bulk excitations are uncorrelated, a condition that is fulfilled for medium‐energy electrons because the thickness of the surface scattering layer is small compared with the electron elastic mean free path. The developed method is successfully applied to REELS spectra of several materials. The resulting distributions of energy losses in an individual surface excitation are in good agreement with theory. In particular, the so‐called begrenzungs effect, i.e. the reduction of the intensity of bulk losses due to coupling with surface excitations near the boundary of a solid‐state plasma, becomes clearly observable in this way. Copyright © 2003 John Wiley & Sons, Ltd.     

Calculations of electron inelastic mean free paths. XI. Data for liquid water for energies from 50 eV to 30 keV

We calculated electron inelastic mean free paths (IMFPs) for liquid water from its optical energy‐loss function (ELF) for electron energies from 50 eV to 30 keV. These calculations were made with the relativistic full Penn algorithm that has been used for previous IMFP and electron stopping‐power calculations for many elemental solids. We also calculated IMFPs of water with three additional algorithms: the relativistic single‐pole approximation, the relativistic simplified single‐pole approximation, and the relativistic extended Mermin method. These calculations were made by using the same optical ELF in order to assess any differences of the IMFPs arising from choice of the algorithm. We found good agreement among the IMFPs from the four algorithms for energies over 300 eV. For energies less than 100 eV, however, large differences became apparent. IMFPs from the relativistic TPP‐2M equation for predicting IMFPs were in good agreement with IMFPs from the four algorithms for energies between 300 eV and 30 keV, but there was poorer agreement for lower energies. We calculated values of the static structure factor as a function of momentum transfer from the full Penn algorithm. The resulting values were in good agreement with results from first‐principle calculations and with inelastic X‐ray scattering spectroscopy experiments. We made comparisons of our IMFPs with earlier calculations from authors who had used different algorithms and different ELF data sets. IMFP differences could then be analyzed in terms of the algorithms and the data sets. Finally, we compared our IMFPs with measurements of IMFPs and of a related quantity, the effective attenuation length. There were large variations in the measured IMFPs and effective attenuation lengths (as well as their dependence on electron energy). Further measurements are therefore required to establish consistent data sets and for more detailed comparisons with calculated IMFPs. Copyright © 2016 John Wiley & Sons, Ltd.     

Optical constants of organic insulators in the UV range extracted from reflection electron energy loss spectra

Reflection electron energy loss spectroscopy (REELS) spectra were measured for seven insulating organic compounds (DNA, Irganox 1010, Kapton, polyethylene [PE], poly(methyl methacrylate) [PMMA], polystyrene [PS] and polytetrafluoroethylene [PTFE]). Optical constants and energy band gaps were extracted from the measured REELS spectra after elimination of multiple electron scattering via a deconvolution and fitting the normalised single scattering energy loss spectra to Drude and Drude–Lindhard model dielectric functions, constrained by the Kramers–Kronig sum and f-sum rules. Satisfactory agreement is found for those optical constants for which literature data exists. For PTFE, the observed features in the optical data correspond to its electronic structure.     

Inelastic scattering and energy loss of swift electron beams in biologically relevant materials

The inelastic mean free path and the stopping power of swift electrons in relevant biomaterials, such as liquid water, DNA, protein, lipid, carotene, sugar, and ice are calculated in the framework of the dielectric formalism. The Mermin Energy Loss Function – Generalized Oscillator Strength model is used to determine the energy loss function of these materials for arbitrary energy and momentum transfer using electron energy‐loss spectroscopy data as input. To ensure the consistency of the model, efforts are made so that both the Kramers–Kronig and f‐sum rules are fulfilled to better than 2%. Our findings indicate sizeable differences in the inelastic mean free path and stopping power among these biomaterials for low‐energy electrons. For example, at 100‐eV electron energy, the inelastic mean free path in protein is 25% smaller than for water and around 10% smaller than for the other biomaterials. The stopping power values of protein, DNA, and sugar are rather similar but 20% larger than for water. Taking into account these results, we conclude that electron interactions with living tissues at the nanometric scale cannot be reliably described using only liquid water as the surrogate of the biological target. Copyright © 2016 John Wiley & Sons, Ltd.     

Dependence of calculated electron effective attenuation lengths on transport mean free paths obtained from two atomic potentials

We report changes in electron effective attenuation lengths (EALs) resulting from use of transport mean free paths (TMFPs) obtained from the Dirac–Hartree–Fock (DHF) potential instead of the Thomas–Fermi–Dirac (TFD) potential in an algorithm used in the National Institute of Standards and Technology (NIST) Electron Effective‐Attenuation‐Length Database (SRD 82). TMFPs from the former potential are believed to be more reliable than those obtained from the latter potential. We investigated changes in the EALs for selected photoelectron and Auger‐electron lines in four elemental solids (Si, Cu, Ag, and W), for Si 2p photoelectrons of varying energy in SiO₂, and for photoelectrons excited by Al Kα X rays in four candidate gate‐dielectric materials (HfO₂, ZrO₂, HfSiO₄, and ZrSiO₄). For each material, we computed the change in the average EAL for a range of overlayer‐film thicknesses from zero to a maximum value corresponding to attenuation of the substrate signal to 10% of its original value. This EAL change was a maximum for electrons emitted normally from the surface and decreased monotonically with increasing emission angle. The maximum EAL change varied between ?4.4% and 2.6% for the three groups of materials. We found that the maximum EAL change correlated mainly with the TMFP change. We found that TMFP changes in other solids could generally lead to maximum EAL changes between ?2.6% and 1.9% for electron energies between 500 and 2000 eV. For lower energies, the maximum EAL changes could be larger for some solids. Our revised EALs for Si 2p photoelectrons in SiO₂ excited by Mg and Al Kα X rays agree within 0.5% with values reported by Seah and Spencer from a detailed analysis of SiO₂ film‐thickness measurements by XPS and other techniques. Copyright © 2006 John Wiley & Sons, Ltd.     

Simple universal curve for the energy‐dependent electron attenuation length for all materials

An analysis is presented for a simple, universal equation for the computation of attenuation lengths (L) for any material, necessary for quantifying layer thicknesses in Auger electron spectroscopy (AES) and X‐ray photoelectron spectroscopy (XPS). Attenuation lengths for selected materials may be computed from the inelastic mean free path (λ_Opt) computed, in turn, from optical data. The computation of L involves the transport mean free path and gives good L values where values of λ_Opt are available. However, λ_Opt values are not available for all materials. Instead, λ may be calculated from the TPP‐2M relation, but this requires the accurate estimation of a number of materials parameters that vary over a wide range. Although these procedures are all soundly based, they are impractical in many analytical situations. L is therefore simply reexpressed, here, in terms of the average Z of the layer which may be deduced from the AES or XPS analysis, the average atomic size a (varies in a small range) and the kinetic energy E of the emitted electron. For strongly bonded materials, such as oxides and alkali halides, a small extra term is included for the heat of formation. A new equation, S3, is established with a root mean square (RMS) deviation of 8% compared with the values of attenuation length calculated from λ_Opt available for elements, inorganic compounds, and organic compounds. This excellent result is suitable for practical analysis. In many films, an average value of a of 0.25 nm is appropriate, and then L may be expressed only in terms of the average Z and E. Then, L expressed in monolayers, equation S4, exhibits an RMS deviation of 9% for many elements. These results are valid for the energy range 100 to 30 000 eV and for angles of emission up to 65°. Copyright © 2012 Crown copyright.     

Report on the 42nd IUVSTA workshop ‘Electron scattering in solids: from fundamental concepts to practical applications’

A summary is given of the workshop entitled ‘Electron Scattering in Solids: from fundamental concepts to practical applications,’ which was held in Debrecen, Hungary, on July 4–8, 2004, under the sponsorship of the International Union of Vacuum Science, Technique, and Applications (IUVSTA). This workshop was held to review the present status and level of understanding of electron‐scattering processes in solids, to identify issues of key importance (hot topics) in the light of the most recent scientific results, and to stimulate discussions leading to a deeper understanding and new solutions of current problems. This report contains summaries of presentations and discussions in sessions on elastic scattering of electrons by atoms and solids, inelastic scattering of electrons in solids, modeling of electron transport in solids and applications, and software. The principal areas of application include Auger‐electron spectroscopy (AES), X‐ray photoelectron spectroscopy, elastic‐peak electron spectroscopy (EPES), reflection electron energy‐loss spectroscopy (REELS), secondary‐electron microscopy, electron‐probe microanalysis (EPMA), and the use of coincidence techniques in electron‐scattering experiments. A major focus of the workshop was determination of the inelastic mean free path of electrons for various surface spectroscopies, particularly corrections for surface and core‐hole effects. Published in 2005 by John Wiley & Sons, Ltd.     

Effective depths for surface excitation derived by reflection electron energy‐loss spectroscopy analysis

A method of estimation is proposed for determining the effective depth of surface excitation. For this, the effective differential inverse inelastic mean free path (DIIMFP) is presumed to be represented as a linear combination of theoretical DIIMFPs for surface and bulk excitation, which are derived by the use of optical dielectric constants. The effective DIIMFP in the approach is derived by a reflected electron energy‐loss spectroscopy analysis based on the extended Landau approach. The present analysis for 1 kV electrons has led to a simple estimation of the effective depth for surface excitations (～14.5 Å for Al and ～21 Å for Ag), agreeing well with an estimation given by υ/ω _s, where υ and ω _s are the velocity of the primary electrons and the average surface plasmon frequency, respectively. Copyright © 2004 John Wiley & Sons, Ltd.