Precise and fast secondary ion mass spectrometry depth profiling of polymer materials with large Ar cluster ion beams

We demonstrate depth profiling of polymer materials by using large argon (Ar) cluster ion beams. In general, depth profiling with secondary ion mass spectrometry (SIMS) presents serious problems in organic materials, because the primary keV atomic ion beams often damage them and the molecular ion yields decrease with increasing incident ion fluence. Recently, we have found reduced damage of organic materials during sputtering with large gas cluster ions, and reported on the unique secondary ion emission of organic materials. Secondary ions from the polymer films were measured with a linear type time‐of‐flight (TOF) technique; the films were also etched with large Ar cluster ion beams. The mean cluster size of the primary ion beams was Ar₇₀₀ and incident energy was 5.5 keV. Although the primary ion fluence exceeded the static SIMS limit, the molecular ion intensities from the polymer films remained constant, indicating that irradiation with large Ar cluster ion beams rarely leads to damage accumulation on the surface of the films, and this characteristic is excellently suitable for SIMS depth profiling of organic materials. Copyright © 2009 John Wiley & Sons, Ltd.     

VAMAS interlaboratory study on organic depth profiling

We present the results of a VAMAS (Versailles project on Advanced Materials and Standards) interlaboratory study on organic depth profiling, in which twenty laboratories submitted data from a multilayer organic reference material. Individual layers were identified using a range of different sputtering species (C₆₀ⁿ⁺, Cs⁺, SF₅⁺ and Xe⁺), but in this study only the C₆₀ⁿ⁺ ions were able to provide truly ‘molecular’ depth profiles from the reference samples. The repeatability of profiles carried out on three separate days by participants was shown to be excellent, with a number of laboratories obtaining better than 5% RSD (relative standard deviation) in depth resolution and sputtering yield, and better than 10% RSD in relative secondary ion intensities. Comparability between laboratories was also good in terms of depth resolution and sputtering yield, allowing useful relationships to be found between ion energy, sputtering yield and depth resolution. The study has shown that organic depth profiling results can, with care, be compared on a day‐to‐day basis and between laboratories. The study has also validated three approaches that significantly improve the quality of organic depth profiling: sample cooling, sample rotation and grazing angles of ion incidence. © Crown copyright 2010.     

Medium energy,heavy and inert ion irradiation of metallic thin films: studies of surface nano‐structuring and metal burrowing

In context to the ion induced surface nanostructuring of metals and their burrowing in the substrates, we report the influence of Xe and Kr ion‐irradiation on Pt:Si and Ag:Si thin films of ~5‐nm thickness. For the irradiation of thin films, several ion energies (275 and 350 keV of Kr; 450 and 700 keV of Xe) were chosen to maintain a constant ratio of the nuclear energy loss to the electronic energy loss (S_n/S_e) in Pt and Ag films (five in present studies). The ion‐fluence was varied from 1.0 × 10¹⁵ to 1.0 × 10¹⁷ ions/cm². The irradiated films were characterized using Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM) and scanning electron microscopy (SEM). The AFM and SEM images show ion beam induced systematic surface nano‐structuring of thin films. The surface nano‐structures evolve with the ion fluence. The RBS spectra show fluence dependent burrowing of Pt and Ag in Si upon the irradiation of both ion beams. At highest fluence, the depth of metal burrowing in Si for all irradiation conditions remains almost constant confirming the synergistic effect of energy losses by the ion beams. The RBS analysis also shows quite large sputtering of thin films bombarded with ion beams. The sputtering yield varied from 54% to 62% by irradiating the thin films with Xe and Kr ions of chosen energies at highest ion fluence. In the paper, we present the experimental results and discuss the ion induced surface nano‐structuring of Pt and Ag and their burrowing in Si. Copyright © 2016 John Wiley & Sons, Ltd.     

Quantitative molecular depth profiling of organic delta-layers by C60 ion sputtering and SIMS

Alternating layers of two different organic materials, Irganox1010 and Irganox3114, have been created using vapor deposition. The layers of Irganox3114 were very thin ( approximately 2.5 nm) in comparison to the layers of Irganox1010 ( approximately 55 or approximately 90 nm) to create an organic equivalent of the inorganic 'delta-layers' commonly employed as reference materials in dynamic secondary ion mass spectrometry. Both materials have identical sputtering yields, and we show that organic delta layers may be used to determine some of the important metrological parameters for cluster ion beam depth profiling. We demonstrate, using a C(60) ion source, that the sputtering yield, S, diminishes with ion dose and that the depth resolution also degrades. By comparison with atomic force microscopy data for films of pure Irganox1010, we show that the degradation in depth resolution is caused by the development of topography. Secondary ion intensities are a well-behaved function of sputtering yield and may be employed to obtain useful analytical information. Fragments characteristic of highly damaged material have intensity proportional to S, and those fragments with minimal molecular rearrangment exhibit intensities proportional to S(2). We demonstrate quantitative analysis of the amount of substance in buried layers of a few nanometer thickness with an accuracy of approximately 10%. Organic delta layers are valuable reference materials for comparing the capabilities of different cluster ion sources and experimental arrangements for the depth profiling of organic materials.     

An effect of measurement conditions on the depth resolution for low‐energy dual‐beam depth profiling using TOF‐SIMS

An effect of measurement conditions on the depth resolution was investigated for dual‐beam time of flight‐secondary ion mass spectrometry depth profiling of delta‐doped‐boron multi‐layers in silicon with a low‐energy sputter ion (200 eV – 2 keV O₂⁺) and with a high‐energy primary ion (30 keV Bi⁺). The depth resolution was evaluated by the intensity ratio of the first peak and the subsequent valley in B⁺ depth profile for each measurement condition. In the case of sputtering with the low energy of 250 eV, the depth resolution was found to be affected by the damage with the high‐energy primary ion (Bi⁺) and was found to be correlated to the ratio of current density of sputter ion to primary ion. From the depth profiles of implanted Bi⁺ primary ion remaining at the analysis area, it was proposed that the influence of high‐energy primary ion to the depth resolution can be explained with a damage accumulation model. Copyright © 2013 John Wiley & Sons, Ltd.     

Sputtering of bismuth thin films under MeV Cu heavy ion irradiation: Experimental data and inelastic thermal spike model interpretation.

The sputtering of bismuth (Bi/Si) thin films deposited onto silicon substrates and irradiated by swift Cu^q+ heavy ions (q = +4 to +7) was investigated by varying both the ion energy over the 10 to 26‐MeV range and the ion fluence ϕ from 5.1 × 10¹³ cm⁻² to 3.4 × 10¹⁵ cm⁻². The sputtering yields were determined experimentally via the Rutherford backscattering spectrometry technique using a 2‐MeV He⁺ ion beam. The measured sputtering yields versus Cu⁷⁺ ion fluence for a fixed incident energy of 26 MeV exhibit a significant depression at very low ϕ‐values flowed by a steady‐state regime above ~1.6 × 10¹⁴ cm⁻², similarly to those previously pointed out for Bi thin films irradiated by MeV heavy ions. By fixing the incident ion fluence to a mean value of ~2.6 × 10¹⁵ cm⁻² in the upper part of the yield saturation regime, the measured sputtering yield data versus ion energy were found to increase with increasing the electronic stopping power in the Bi target material. Their comparison to theoretical predicted models is discussed. A good agreement is observed between the measured sputtering yields and the predicted ones when considering the contribution of 2 competitive processes of nuclear and electronic energy losses via, respectively, the SRIM simulation code and the inelastic thermal spike model using refined parameters of the ion slowing down with reduced thermophysical proprieties of the Bi thin films.     

Analysis of thin films and molecular orientation using cluster SIMS

A study of phenylalanine films of different thicknesses from submonolayer to 55 nm on Si wafers has been made using Bi_n⁺ and C₆₀⁺ cluster primary ions in static SIMS. This shows that the effect of film thickness on ion yield is very similar for all primary ions, with an enhanced molecular yield at approximately 1 monolayer attributed to substrate backscattering. The static SIMS ion yields of phenylalanine at different thicknesses are, in principle, the equivalent of a static SIMS depth profile, without the complication of ion beam damage and roughness resulting from sputtering to the relevant thickness. Analyzing thin films of phenylalanine of different thicknesses allows an interpretation of molecular bonding to, and orientation on, the silicon substrate that is confirmed by XPS. The large crater size for cluster ions has interesting effects on the secondary ion intensities of both the overlayer and the substrate for monolayer and submonolayer quantities. This study expands the capability of SIMS for identification of the chemical structure of molecules at surfaces. © Crown copyright 2010.     

Comparison of fullerene and large argon clusters for the molecular depth profiling of amino acid multilayers

A major challenge regarding the characterization of multilayer films is to perform high-resolution molecular depth profiling of, in particular, organic materials. This experimental work compares the performance of C₆₀ ⁺ and Ar₁₇₀₀ ⁺ for the depth profiling of model multilayer organic films. In particular, the conditions under which the original interface widths (depth resolution) were preserved were investigated as a function of the sputtering energy. The multilayer samples consisted of three thin δ-layers (~8 nm) of the amino acid tyrosine embedded between four thicker layers (~93 nm) of the amino acid phenylalanine, all evaporated on to a silicon substrate under high vacuum. When C₆₀ ⁺ was used for sputtering, the interface quality degraded with depth through an increase of the apparent width and a decay of the signal intensity. Due to the continuous sputtering yield decline with increasing the C₆₀ ⁺ dose, the second and third δ-layers were shifted with respect to the first one; this deterioration was more pronounced at 10 keV, when the third δ-layer, and a fortiori the silicon substrate, could not be reached even after prolonged sputtering. When large argon clusters, Ar₁₇₀₀ ⁺, were used for sputtering, a stable molecular signal and constant sputtering yield were achieved throughout the erosion process. The depth resolution parameters calculated for all δ-layers were very similar irrespective of the impact energy. The experimental interface widths of approximately 10 nm were barely larger than the theoretical thickness of 8 nm for the evaporated δ-layers.

New horizons in sputter depth profiling inorganics with giant gas cluster sources: Niobium oxide thin films

X‐ray photoelectron spectroscopy is used to study a wide variety of material systems as a function of depth (“depth profiling”). Historically, Ar⁺ has been the primary ion of choice, but even at low kinetic energies, Ar⁺ ion beams can damage materials by creating, for example, nonstoichiometric oxides. Here, we show that the depth profiles of inorganic oxides can be greatly improved using Ar giant gas cluster beams. For NbO_x thin films, we demonstrate that using Ar_x⁺ (x = 1000‐2500) gas cluster beams with kinetic energies per projectile atom from 5 to 20 eV, there is significantly less preferential oxygen sputtering than 500 eV Ar⁺ sputtering leading to improvements in the measured steady state O/Nb ratio. However, there is significant sputter‐induced sample roughness. Depending on the experimental conditions, the surface roughness is up to 20× that of the initial NbO_x surface. In general, higher kinetic energies per rojectile atom (E/n) lead to higher sputter yields (Y/n) and less sputter‐induced roughness and consequently better quality depth profiles. We demonstrate that the best‐quality depth profiles are obtained by increasing the sample temperature; the chemical damage and the crater rms roughness is reduced. The best experimental conditions for depth profiling were found to be using a 20 keV Ar₂₅₀₀⁺ primary ion beam at a sample temperature of 44°C. At this temperature, there is no, or very little, reduction of the niobium oxide layer and the crater rms roughness is close to that of the original surface.     

Summary of ISO/TC 201 Standard: ISO 22415—Surface chemical analysis—Secondary ion mass spectrometry—Method for determining yield volume in argon cluster sputter depth profiling of organic materials

The International Standard ISO 22415 provides methods to measure sputtering yield volumes of organic test materials using argon cluster ions. The test materials should consist of thin films of known thicknesses between 50 and 1000 nm. The format of the test materials, the measurement of sputtering ion dose, sputtered depth, and reporting requirements for sputtering yield volumes are described.     

Depth profiling in secondary ion mass spectrometry for ultra‐thin layer with nanometer order thickness by mesa‐structure fabrication

We attempted to make an accurate depth profiling in secondary ion mass spectrometry (SIMS) including backside SIMS for ultra‐thin nanometer order layer. The depth profiles for HfO₂ layers that were 3 and 5 nm thick in a‐Si/HfO₂/Si were measured using quadrupole and magnetic sector type SIMS instruments. The depth profiling for an ultra‐thin layer with a high depth resolution strongly depends on how the crater‐edge and knock‐on effects can be properly reduced. Therefore, it is important to control the analyzing conditions, such as the primary ion energy, the beam focusing size, the incidence angle, the rastered area, and detected area to reduce these effects. The crater‐edge effect was significantly reduced by fabricating the sample into a mesa‐shaped structure using a photolithography technique. The knock‐on effect will be serious when the depth of the layer of interest from the surface is located within the depth of the ion mixing region due to the penetration of the primary ions. Finally, we were able to separately assign the origin of the distortion to the crater‐edge effect and knock‐on effect. Copyright © 2012 John Wiley & Sons, Ltd.     

Incident angle and energy dependences of low‐energy Ar+ ion sputtering of GaAs/AlAs multilayered system

Dependences of the depth resolution in Auger electron spectroscopy sputter‐depth profiling of a GaAs/AlAs superlattice reference material on the incident angle and energy of primary Ar⁺ ions were investigated. The results revealed that the depth resolution is improved for the lower primary energy as a square root of the primary energy of ions at both the incident angles of 50° and 70° , except for 100 eV at 50° , where the significant deterioration of the depth resolution is induced by the preferential sputtering of As in AlAs, and the difference in the etching rate between GaAs and AlAs. The deterioration of the depth resolution, i.e. the difference in the etching rate and the preferential sputtering, observed for 100 eV at 50° was suppressed by changing the incident angle of ions from 50° to 70° , resulting in the high‐depth resolution of ～1.3 nm. The present results revealed that the glancing incidence of primary ions is effective to not only reducing the atomic mixing but also suppressing the difference in the etching rates between GaAs and AlAs and the preferential sputtering in the GaAs/AlAs multilayered system. The results also suggest that careful attention is required for the optimization of conditions of sputter‐depth profiling using GaAs/AlAs superlattice materials under low‐energy ion irradiation. Copyright © 2009 John Wiley & Sons, Ltd.     

Preferential sputtering observed in Auger electron spectroscopy sputter depth profiling of AlAs/GaAs superlattice using low‐energy ions

Auger electron spectroscopy (AES) sputter depth profiling of an ISO reference material of the GaAs/AlAs superlattice was investigated using low‐energy Ar⁺ ions. Although a high depth resolution of ～1.0 nm was obtained at the GaAs/AlAs interface under 100 eV Ar⁺ ion irradiation, deterioration of the depth resolution was observed at the AlAs/GaAs interface. The Auger peak profile revealed that the enrichment of Al due to preferential sputtering occurred during sputter etching of the AlAs layer only under 100 eV Ar⁺ ion irradiation. In addition, a significant difference in the etching rates between the AlAs and GaAs layers was observed for low‐energy ion irradiation. Deterioration of the depth resolution under 100 eV Ar⁺ ion irradiation is attributed to the preferential sputtering and the difference in the etching rate. The present results suggest that the effects induced by the preferential sputtering and the significant difference in the etching rate should be taken into account to optimize ion etching conditions using the GaAs/AlAs reference material under low‐energy ion irradiation. Copyright © 2005 John Wiley & Sons, Ltd.     

Surface topography effects on glow discharge depth profiling analysis

Glow discharge optical emission spectroscopy (GD‐OES) has been shown to be of immense value in elemental depth profiling of thin or thick films on conductive or non‐conductive substrates. For aluminium, GD‐OES has been employed to examine locations of markers and tracers in anodic films, thereby assisting understanding of transport phenomena. In order to investigate the influence of surface topography on depth profiling analysis, anodic aluminium oxide films of various thicknesses, with incorporated electrolyte species, were produced on superpure aluminium substrates of controlled roughnesses. The distributions of incorporated species in the films were subsequently probed. Surface topography modifications and consequent depth resolution degradation were examined during depth profiling analysis performed by GD‐OES. The results reveal that the sputtering process leads to the roughening or smoothing of the surface topography of the specimen for a ratio of the film thickness to the amplitude of the substrate texture less, or greater, than 1 respectively. As a consequence of the surface topography dependence of the ion bombardment, analysis of thin films over rough surfaces suffers from depth resolution limitations due to sputtering‐induced topography changes, thereby limiting quantification of the resultant spectra. Copyright © 2010 John Wiley & Sons, Ltd.     

Determination of the relative sputtering yield of carbon to tantalum by means of Auger electron spectroscopy depth profiling

The relative sputtering yield of carbon with respect to tantalum was determined for 1 keV Ar⁺ ion bombardment in the angular range of 70°–82° (measured from surface normal) by means of Auger electron spectroscopy depth profiling of C/Ta and Ta/C bilayers. The ion bombardment‐induced interface broadening was strongly different for the C/Ta and Ta/C, whereas the C/Ta interface was found to be rather sharp, the Ta/C interface was unusually broad. Still the relative sputtering yields (Y_C/Y_Ta) derived from the Auger electron spectroscopy depth profiles of the two specimens agreed well. The relative sputtering yields obtained were different from those determined earlier on thick layers, calculated by simulation of SRIM2006 and by the fitting equation of Eckstein. The difference increases with increase of angle of incidence. Copyright © 2009 John Wiley & Sons, Ltd.     

Depth profiling of Irganox‐3114 nanoscale delta layers in a matrix of Irganox‐1010 using conventional Cs+ and O2+ ion beams

Depth profiling of an organic reference sample consisting of Irganox 3114 layers of 3 nm thickness at depths of 51.5, 104.5, 207.6 and 310.7 nm inside a 412 nm thick Irganox 1010 matrix evaporated on a Si substrate has been studied using the conventional Cs⁺ and O₂⁺ as sputter ion beams and Bi⁺ as the primary ion for analysis in a dual beam time‐of‐flight secondary ion mass spectrometer. The work is an extension of the Versailles Project on Advanced Materials and Standards project on depth profiling of organic multilayer materials. Cs⁺ ions were used at energies of 500 eV, 1.0 keV and 2.0 keV and the O₂⁺ ions were used at energies of 500 eV and 1.0 keV. All four Irganox 3114 layers were identified clearly in the depth profile using low mass secondary ions. The depth profile data were fitted to the empirical expression of Dowsett function and these fits are reported along with the full width at half maxima to represent the useful resolution for all the four delta layers detected. The data show that, of the conditions used in these experiments, an energy of 500 eV for both Cs⁺ beam and O₂⁺ beam provides the most useful depth profiles. The sputter yield volume per ion calculated from the slope of depth versus ion dose matches well with earlier reported data. Copyright © 2013 John Wiley & Sons, Ltd.     

Optimization of the depth resolution for profiling SiO2/SiC interfaces by dual-beam TOF-SIMS combined with etching

To examine precise depth profiles at the interface of SiO₂/SiC, a high resolution that can detect slight discrepancies in the distribution is needed. In this study, an experimental method to achieve a high resolution of less than 1 nm was developed by using dual-beam time-of-flight secondary ion mass spectrometry (TOF-SIMS). The analysis was preceded by the following three steps: (1) determination of the optimal analytical conditions of the analysis beam (Bi⁺) and sputtering beam (Cs⁺), (2) verification of the etching methods to thin the SiO₂ layer, and (3) confirmation of the benefits of the low-energy sputtering beam directed toward SiO₂/SiC samples. By using the secondary ion intensity peak-to-valley ratio of BN⁻ and BO⁻ of a sample with delta-doped boron multilayers, the appropriate Bi⁺/Cs⁺ condition for a high depth resolution was determined for each energy level of the sputtering beam. Upon verification of the etching methods to thin the SiO₂ layer, slight discrepancies were found between samples that were obtained with different etching methods. The difference in the roughness values of the etched surfaces was proactively utilized for the performance confirmation of the low-energy sputtering beam by means of precise observation of the profiles at the SiO₂/SiC interface. The use of a Cs beam with a low energy between 0.25 and 0.5 keV enabled the detection of slight discrepancies in the roughness of less than 1 nm between samples. The aforementioned method has the potential to accurately detect discrepancies in the intrinsic distribution at the SiO₂/SiC interface among samples.     

Molecular sputter depth profiling using carbon cluster beams

Sputter depth profiling of organic films while maintaining the molecular integrity of the sample has long been deemed impossible because of the accumulation of ion bombardment-induced chemical damage. Only recently, it was found that this problem can be greatly reduced if cluster ion beams are used for sputter erosion. For organic samples, carbon cluster ions appear to be particularly well suited for such a task. Analysis of available data reveals that a projectile appears to be more effective as the number of carbon atoms in the cluster is increased, leaving fullerene ions as the most promising candidates to date. Using a commercially available, highly focused C₆₀^q+ cluster ion beam, we demonstrate the versatility of the technique for depth profiling various organic films deposited on a silicon substrate and elucidate the dependence of the results on properties such as projectile ion impact energy and angle, and sample temperature. Moreover, examples are shown where the technique is applied to organic multilayer structures in order to investigate the depth resolution across film-film interfaces. These model experiments allow collection of valuable information on how cluster impact molecular depth profiling works and how to understand and optimize the depth resolution achieved using this technique.     

Theoretical and experimental analyses of the deposited silver thin films

The silver thin films have been prepared using magnetron DC‐sputtering. We discuss in detail the thin films AFM images and their properties in different sputtering times of 2 to 6 minutes. Despite the low thickness of the films, the roughness saturation amounts, W_s, are well separated. The surface data do not follow the normal Family‐Vicsek scaling, and we have the local growth exponent, β(W_s(t)∼t^β). We obtained the global roughness scaling exponent α=0.36 and growth exponent, β=0.50. We also obtain the fractal spectrum of the data, f(α). The results show that the spectrum is right‐hook like. It distinguishes between different film thicknesses even in small sizes of hundreds of nanometers. Furthermore, we measure the surface conductivities and compare them to the thin film roughnesses. We investigate the roughness and fractality of the AFM data, looking for their relations to width and conductivity of the silver thin film samples.