胶体量子点电致发光器件的研究进展

胶体量子点因其性质稳定、可溶液加工、发光颜色易于调节、色彩饱和度高等优点在固体照明、平板显示、红外通讯等领域引起人们高度关注.本文详细介绍了最近胶体量子点电致发光领域取得的重要进展,包括基于 II-VI 族(CdSe、CdTe、PbS、PbSe),III-V 族(InAs、InP),和 I-III-VI 族(CuInS、CuInSe)的量子点电致发光二极管.     

胶体CdSe量子点的色度学特性研究

使用化学胶体法合成了CdSe量子点，研究了样品的荧光量子产率，发现随CdSe量子点粒径的增大，荧光量子产率存在先增大后减小的现象.研究了CdSe量子点的色度学特性，通过对不同尺寸、不同粒径分布范围的CdSe量子点色度坐标的计算，讨论了粒径分布范围对其荧光颜色饱和度的影响，解释了为何难以获得高颜色饱和度的绿光量子点.利用红、蓝两种不同尺寸的量子点配制出白光样品，提出了估计配色后样品色度坐标的经验公式，结果显示白光样品色度坐标的实验值与经验公式估计值基本一致.     

溶胶-凝胶法制备PbS量子点玻璃的研究

采用溶胶-凝胶法合成了半导体PbS量子点掺杂的Na₂O-B₂O₃-SiO₂玻璃,研究了不同热处理工艺对玻璃结构的影响,利用多种表征手段研究了量子点掺杂玻璃中的微晶结构及其光学性能.孔径分析结果表明随着热处理温度的升高玻璃内部孔径不断减小,最终孔结构几乎完全消失;红外光谱分析表明玻璃网络结构在较低温度下己经形成,随温度的升高不断密实化; X射线光电子能谱证明了玻璃中存在PbS,高分辨透射电镜表征了玻璃基质中掺杂的微晶结构是PbS,统计计算表明,玻璃中微晶的平均粒径尺寸为3.5nm;吸收光谱分析发现,微晶掺杂玻璃的吸收边界较PbS的块体材料发生了明显的蓝移,产生了量子尺寸效应;通过Z扫描技术测得其非线性折射率γ为-2.03×10^-14cm²/GW. 关键词： PbS量子点 半导体 非线性光学效应 溶胶-凝胶法     

量子点中浅施主的能谱结构

在有效质量近似下，使用线性变分方法计算了处于ＧａＡｓ－Ｇａ_１－ｘＡｌ_ｘＡs球形量子点中不同位置的浅施主杂质的能谱结构，讨论了能级的简并度和不同情况下的能级序，扩展了文献［１０］中所得到的结果。计算结果表明电子结构明显地依赖于量子点的半径和杂质离子所处的位置。计算结果还说明选择合适的基函数对于讨论量子点中问题的重要性。 关键词：     

热分解含硫金属有机配合物制备近红外PbS量子点

以Pb(NO₃)₂, Na(S₂CNEt₂)·3H₂O为反应物, 在去离子水中合成含硫金属有机配合物Pb(S₂CNEt₂)₂. 氩气保护下, 在油酸和十八烯混合溶液中热分解前躯体Pb(S₂CNEt₂)₂, 反应时间分别为30, 60, 90, 120 min, 获得PbS量子点样品a, b, c, d. 通过红外光谱分析和热重-差热等手段对前躯体进行表征, 证明配体Na(S₂CNEt₂)·3H₂O中的两个硫原子与Pb²⁺配位成功. PbS量子点样品X射线衍射和透射电子显微镜分析表明, 合成的PbS为类球形纯立方晶系PbS纳米晶; 对PbS量子点样品紫外-可见吸收光谱和光致发光谱进行研究发现, 吸收光谱和光致发光谱随着反应时间的增加顺序红移, 表明优化热分解反应时间可以调控PbS量子点的吸收光谱和光致发光谱. PbS量子点样品a发射峰在1080 nm, 与硅基太阳能电池相匹配, 可作为硅基荧光太阳能聚集器的荧光材料. 关键词： 热分解法 含硫金属有机配合物 PbS量子点 反应时间     

椭圆柱形量子点的能级结构

采用椭圆柱坐标及无限深势阱模型对椭圆柱形量子点进行了研究，给出了计算椭圆柱形量子点中单电子的能级结构和波函数的表达式. 关键词： 量子点 人造原子 能级 波函数     

界面调控对柔性量子点电致发光器件性能的影响

近年来,柔性显示技术引起了人们的广泛关注,尤其在折叠手机、可穿戴电子等领域,柔性显示屏幕更是不可或缺。量子点发光二极管（Quantum dot light emitting diodes,QLEDs）因具有高色纯度、高效率、高稳定性等特点而在柔性显示领域展现了独特的优势。本文首先介绍了柔性量子点发光二极管（flex-QLEDs）及其近期进展,然后讨论了器件结构及界面调控对发光性能的影响。在多层异质结构的flex-QLEDs的基础上,总结了三种界面调控方法：阳极界面调控、阴极界面调控、发光层调控。调控聚焦于降低表面粗糙度、增强界面结合力、优化各层能级。最后,对目前flex-QLEDs的性能进行了比较与总结,并对未来面临的挑战和机遇进行了展望。     

ZnO@GQDs核壳结构量子点的制备及性能研究

采用原位聚合法制备了以ZnO量子点为核、石墨烯量子点（GQDs）为壳的ZnO@ GQDs核壳结构量子点。通过TEM和HR-TEM对量子点进行形貌和结构的分析表征。结果表明,合成的ZnO@ GQDs核壳结构量子点为球形,粒径为～7 nm,且尺寸均匀。PL光谱研究表明,新型量子点的发射峰位于369 nm,发光峰窄、强度高;相对于ZnO的本征发射峰,GQDs的引入使得ZnO@GQDs核壳量子点的荧光发射峰出现蓝移、强度变高,从而使复合量子点的荧光具有较纯的色度和较高的强度,说明GQDs的引入具有协同优化效应。该量子点有望应用于LED显示器件。     

掺杂石墨烯量子点对P3HT:PCBM太阳能电池性能的影响

为研究掺杂石墨烯量子点(GQDs)对聚合物电池的影响,采用溶剂热法制备了GQDs,掺杂到聚3-己基噻吩和富勒烯衍生物(P3HT∶PCBM)中作光敏层制备了聚合物太阳能电池。掺杂不同浓度的GQDs后,聚合物电池的开路电压和填充因子都比未掺杂器件高。GQDs掺杂质量分数为0.15%时,形成的掺杂薄膜平整、均匀,填充因子提高了17.42%。GQDs经还原后,随还原时间的延长,填充因子FF增大。到45 min时,电池的FF基本稳定,从31.57%提高至40.80%,提高了29.24%。退火后,获得了最佳的掺杂GQDs的聚合物太阳能电池,开路电压Voc为0.54 V,填充因子FF为55.56%,光电转换效率为0.75%。     

Light Harvesting and Enhanced Performance of Si Quantum Dot/Si Nanowire Heterojunction Solar Cells

Si nanowires (Si NWs) structures with good antireflection and enhanced optical‐absorption properties are used to fabricate Si quantum dots/Si NWs heterojunction solar cells. The Si NWs prepared by the metal‐assisted chemical‐etching technique exhibit a very low reflection in a wide spectral range (300–1200 nm). Correspondingly, the optical absorption reaches as high as 88.9% by weighting AM1.5G solar spectrum. Both the short current density and open current voltage are improved compared to the reference flat cell. However, the photovoltaic properties are degraded by varying the Si NWs with long etching time, possibly due to the increased etching‐induced surface states. The optimal Si NWs lead to the best cell with the power conversion efficiency of 11.3%.     

PbS量子点在荧光集光太阳能光伏器件上的应用

荧光集光太阳能光伏器件在平面光波导效应的作用下实现等效聚光,可以减少太阳能电池的用量,有效降低光伏发电的成本。将胶体化学法制备的吸收和发射在近红外波段的单分散球状PbS量子点荧光材料封装于两片光伏超白玻璃间的正己烷溶液中,构成溶液夹层封装的平面光波导,并和效率为17%的单晶硅太阳能电池耦合,制作出了吸收在700～1000nm,效率约为1.31%的近红外荧光集光太阳能光伏器件。     

Ab Initio Simulation of Charge Transfer at the Semiconductor Quantum Dot/TiO2 Interface in Quantum Dot‐Sensitized Solar Cells

Quantum dot‐sensitized solar cells (QDSSCs) have emerged as a promising solar architecture for next‐generation solar cells. The QDSSCs exhibit a remarkably fast electron transfer from the quantum dot (QD) donor to the TiO₂ acceptor with size quantization properties of QDs that allows for the modulation of band energies to control photoresponse and photoconversion efficiency of solar cells. To understand the mechanisms that underpin this rapid charge transfer, the electronic properties of CdSe and PbSe QDs with different sizes on the TiO₂ substrate are simulated using a rigorous ab initio density functional method. This method capitalizes on localized orbital basis set, which is computationally less intensive. Quite intriguingly, a remarkable set of electron bridging states between QDs and TiO₂ occurring via the strong bonding between the conduction bands of QDs and TiO₂ is revealed. Such bridging states account for the fast adiabatic charge transfer from the QD donor to the TiO₂ acceptor, and may be a general feature for strongly coupled donor/acceptor systems. All the QDs/TiO₂ systems exhibit type II band alignments, with conduction band offsets that increase with the decrease in QD size. This facilitates the charge transfer from QDs donors to TiO₂ acceptors and explains the dependence of the increased charge transfer rate with the decreased QD size.     

Synthesis and Characterization of Large PbSe Colloidal Quantum Dots

Large colloidal quantum dots of PbSe (first excitonic peak position >2 µm) are synthesized under different conditions of temperature, the concentration of precursors and their ratio, and concentration of oleic acid and diphenylphosphine. The dependence of the optical properties, grain size dispersity, and process yield on the processing conditions is systematically explored and discussed. The Ostwald ripening process and how it affects grain growth is demonstrated. Finally, the results for the dependence of the absorption wavelength on the grain diameter for large nanocrystals are compared to the relationships reported in the literature for smaller nanocrystals.     

Investigation of Gold Quantum Dot Enhanced Organic Thin Film Solar Cells

Gold quantum dots (AuQDs) are employed as photosensitizers in organic thin‐film solar cells (OSCs) to improve their photoelectric conversion properties. Three types of AuQDs with different fluorescence emission wavelengths are used: blue (B‐AuQDs), green (G‐AuQDs), and red (R‐AuQDs). AuQDs are loaded into the poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) thin‐film layer of OSCs. UV–vis spectra, atomic force microscope images, current density–voltage characteristics, and impedance spectra of the fabricated devices are measured for the three aforementioned types of AuQDs. All types of AuQDs improve the photoelectric conversion properties, and the G‐AuQD‐loaded OSCs exhibit the best improvement, exhibiting an efficiency increase of 10% compared with OSCs without the AuQDs. The fluorescence/photosensitization of the AuQDs plays an important role in the enhancement of the OSCs. Finite‐difference time‐domain simulations indicate increased electric field intensity due to a small degree of AuQDs aggregation.     

Effect of Induced Transition on the Quantum Entanglement and Coherence in Two-Coupled Double Quantum Dot System

Studying quantum properties in solid-state systems is a significant avenue for research. In this scenario, double quantum dots appear as a versatile platform for technological breakthroughs in quantum computation and nanotechnology. This work inspects the thermal entanglement and quantum coherence in two-coupled DODs, where the system is exposed to an external stimulus that induces an electronic transition within each subsystem. The results show that the introduction of external stimulus induces a quantum level crossing that relies upon the Coulomb potential changing the degree of quantum entanglement and coherence of the system. Thus, the quantum properties of the system can be tuned by changing the transition frequency, leading to the enhancement of its quantum properties.     

磁场和量子点尺寸对方形杂质量子点中电子性质的影响

利用二维有限差分方法,计算了含有H_2~+杂质的方形量子点的基态能和杂质束缚能。讨论了磁场和杂质位置对不同尺寸的量子点中电子基态能量和束缚能的影响,得出了方形量子点系统的量子尺寸效应。     

Increased open‐circuit voltage of ZnO nanowire/PbS quantum dot bulk heterojunction solar cells with solution‐deposited Mg(OH)2 interlayer

An ultrathin Mg(OH)₂ layer was solution‐deposited onto the ZnO nanowires to solve the problem of interfacial charge recombination, caused by the increase of interfacial area in bulk heterojunction (BHJ) PbS colloidal quantum dot solar cells (CQDSCs). This Mg(OH)₂ interlayer efficiently passivated the surface defects of ZnO nanowires and provided tunnel barrier at ZnO/PbS interface. As a result, the charge recombination at ZnO/PbS interface was largely suppressed, proved by the significantly elongated electron lifetime and the increased open‐circuit voltage of the Mg(OH)₂‐involved BHJ CQDSCs. Careful thickness optimization of Mg(OH)₂ interlayer finally brought a ～33% increase in V_oc and ～25% improvement in power conversion efficiency.