Backscattering effect in quantitative AES sputter depth profiling of multilayers

AES sputter depth profiles of multilayers with constituents of very different backscattering factors show characteristic distortions in the shape of the intensity–depth profiles. These distortions are quantified by introducing an extension of the local effective backscattering factor concept developed in an earlier paper in the mixing‐roughness‐information depth (MRI) model for profile quantification. The extension is based on a linear superposition of two newly defined parameters, the effective backscattering factors for each interface that are diminished with distance from the respective interface by another characteristic parameter, the mean effective backscattering decay length. As shown for a Ni/C multilayer structure of six alternating layers of Ni (38 nm) and C (25 nm) on a Si substrate, AES intensity depth profiles calculated with the presented modification of the MRI model, yield an excellent agreement with the measured profile after some adjustment of the initial mean effective backscattering decay lengths and, sometimes, after a slight change of the backscattering factors given by the Ichimura–Shimizu relations. The backscattering effect is studied as a function of the single layer thickness. A critical layer thickness can be determined, below which the backscattering influence becomes negligible for typical AES depth profiling results. Copyright © 2007 John Wiley & Sons, Ltd.     

AES depth profiling with a tilted sample in front of a cylindrical mirror analyzer: quantification and profile shape changes according to an extension of the conventional MRI model

The influence of the tilt angle of a sample in front of a cylindrical mirror analyzer (CMA) on AES depth profiles is calculated with the conventional mixing‐roughness‐information (MRI) depth model and an extended MRI model. While the conventional model works with an average electron escape depth value, the extended model takes into account the intensity from different segments along the azimuth angle corresponding to different escape depth values before summing up for the total, measured intensity. The deviation between both approaches is generally less than 4%, even for the worst case at 47.7° tilt angle. The shape of the profile is slightly different for both approaches. Because, for a CMA with coaxial gun, the sample tilt angle varies as the electron beam incidence angle, the influence of the latter has to be additionally taken into account for quantification of AES. In reasonable agreement with experimental results it is shown that above 45° the Auger peak intensity of Cu (914 eV) increases up to about a factor of two for an incidence angle of 85°. Copyright © 2006 John Wiley & Sons, Ltd.     

Study of interface diffusion and reaction between Zr3N4 and stainless steel

The effect of annealing treatment on the interface diffusion and reaction between Zr₃N₄/stainless steel was studied by AES depth profiling along with line shape analysis. The Zr₃N₄ film was deposited on stainless‐steel substrates by reactive magnetron sputtering. Scanning electron microscopy, electron diffraction, AES and UV–VIS reflection were performed to characterize the deposited film. The results indicated that the interface diffusion between Zr₃N₄ and stainless steel took place during deposition and can be promoted by annealing treatment, but no interface reaction took place before or after annealing treatment. High‐temperature and long‐time annealing treatment resulted in obvious oxidation of the Zr₃N₄ layer. The UV–VIS reflection results indicated that the absorption band of Zr₃N₄ film shifted to shorter wavelength after annealing treatment. Copyright © 2003 John Wiley & Sons, Ltd.     

Variation of the electron inelastic mean free path during depth profiling of the Fe/Si interface as determined by quantitative REELS

The aim of this work is to determine the dependence of the electron inelastic mean free path (IMFP) at the Fe/Si interface during depth profiling by sputtering with 3 keV Ar⁺ ions. In order to estimate the variation of the IMFP at the interface, reflection electron energy‐loss spectroscopy (REELS) measurements were performed after different sputtering times at the Fe/Si interface with three different primary electron energies (i.e. 0.5, 1 and 1.5 keV). Even though it is highly likely that a compound (i.e. Fe_xSi) is formed at the interface, all the experimental REELS spectra could be analysed as a linear combination of those corresponding to pure Si and Fe. Using the model developed by Yubero and Tougaard for quantitative analysis of these REELS spectra we could estimate the IMFP values along the depth profile at the interface. The resulting IMFPs are observed to vary linearly with the average composition (as determined by REELS) at the Fe/Si interface as it is sputter depth profiled. The energy dependence of the IMFP for different compositions is presented and discussed. For completeness, we have determined the energy‐loss functions as well as the IMFPs of the pure elements (i.e. Fe and Si). Copyright © 2004 John Wiley & Sons, Ltd.     

Investigation of metallization schemes for high temperature devices based on silicon carbide

The suitability of several metallization schemes for high temperature sensors and devices based on silicon carbide was investigated. Auger electron spectroscopy (AES) depth profiling was used for the detection of possible interface reactions and thermal induced diffusion processes. Changes in the structure of the films under the influence of high temperature were observed by transmission electron microscopy (TEM). The maximum operation temperature for the metallization with aluminum as coverlayer was found at 450?°C. The ability of gold with underlying tungsten nitride as diffusion barrier to work at temperatures above 450?°C was shown.     

Simultaneous SIMS/AES Measurements for the Characterization of Multilayer Systems

The interface region of silicon dioxide layers deposited on indium phosphide was investigated by simultaneous secondary ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES) depth profile measurements. The results of such measurements depend strongly on the ion species used for sputtering. With Ar⁺ primary ions an enhancement of the P- and In-SIMS signals occurs in the mixing zone at the interface. This effect can be explained by an increase of the ionization yield of In and P in the presence of oxygen from the SiO₂. The use of O₂ ⁺ as sputter ions enlarges the phosphorus peak at the interface while the enhancement of the In-signal diminishes. The simultaneously measured AES spectra give clear evidence of oxygen bonded In and P at the interface. Additionally, preferential sputtering of phosphorus occurs. The understanding of these effects which complicate the interpretation of SIMS and AES depth profile measurements of the system SiO₂/InP allows us to investigate the silicon dioxide layers and the interface region in order to optimize the SiO₂ deposition process, e.g. for surface passivation or MIS structures.     

Experimental and theoretical determination of the mixing efficiency at low‐energy Ar+ bombardment: case study of the Cu/Co system

The mixing of a Co/Cu bilayer induced by low‐energy ion bombardment was studied by AES depth profiling and molecular dynamic (MD) simulation. The conditions of the ion bombardment were as follows: Ar⁺ ion, 1 keV energy, 82° angle of incidence (with respect to the surface normal). In AES depth profiling, the in‐depth concentration distribution was estimated from the measured Auger intensities assuming that the in‐depth distribution is an erf function. The variance (σ²) of the erf function gave the broadening of the interface due to ion bombardment, which divided by the fluence (Φ) and deposited energy (F_D given by SRIM) gave the mixing efficiency (σ²/ΦF_D) to be 0.08 ± 0.01 nm⁵/keV. The mixing efficiency calculated by MD, 0.09 nm⁵/keV, agreed well with that estimated from the experimental data, and both have been close to the value assuming ballistic mixing. Copyright © 2007 John Wiley & Sons, Ltd.     

Preferential sputtering observed in Auger electron spectroscopy sputter depth profiling of AlAs/GaAs superlattice using low‐energy ions

Auger electron spectroscopy (AES) sputter depth profiling of an ISO reference material of the GaAs/AlAs superlattice was investigated using low‐energy Ar⁺ ions. Although a high depth resolution of ～1.0 nm was obtained at the GaAs/AlAs interface under 100 eV Ar⁺ ion irradiation, deterioration of the depth resolution was observed at the AlAs/GaAs interface. The Auger peak profile revealed that the enrichment of Al due to preferential sputtering occurred during sputter etching of the AlAs layer only under 100 eV Ar⁺ ion irradiation. In addition, a significant difference in the etching rates between the AlAs and GaAs layers was observed for low‐energy ion irradiation. Deterioration of the depth resolution under 100 eV Ar⁺ ion irradiation is attributed to the preferential sputtering and the difference in the etching rate. The present results suggest that the effects induced by the preferential sputtering and the significant difference in the etching rate should be taken into account to optimize ion etching conditions using the GaAs/AlAs reference material under low‐energy ion irradiation. Copyright © 2005 John Wiley & Sons, Ltd.     

Quantification of AES depth profiling data of polycrystalline Al films with Gaussian and non‐Gaussian surface height distributions

Sputtering‐induced roughness is the main distortional factor on the depth resolution of measured depth profiles, in particular, for sputtering of polycrystalline metals. Frequently, the surface height distribution of the sputtering‐induced roughness exhibits an asymmetrical feature. In such a case, a non‐Gaussian height distribution function (HDF) has to be applied for the quantification of a measured depth profile. By replacing the usually applied Gaussian HDF with that of an asymmetrical triangle in the Mixing‐Roughness‐Information depth model, measured Auger electron spectroscopy depth profiling data of the interface of polycrystalline Al films on Si are perfectly fitted. The asymmetric triangle height distributions obtained from the best fit are a reasonable approximation of the height distributions measured by atomic force microscopy. Copyright © 2013 John Wiley & Sons, Ltd.     

Surface and in-depth characterization of TiC/C and Ti(C,N) layers by means of AES and Factor Analysis

Magnetron sputtered TiC/C multilayers and Plasma Vapour Deposited Ti(C,N) layers have been investigated by AES. The carbon sensivity factor has been calibrated for the correct composition of a TiC standard sample. Nitrogen has been measured indirectly based on the Ti_L3M23M23/Ti_L3M23V peak area ratio in the direct EN(E) spectrum using Ti, TiC and TiN standard samples. The influence of Tougaard background removal has been tested. As the less accurate method taking the Ti peak-to-peak ratio has been found to give adequately good results. It has been possible to recalculate AES depth profiles, where only peak-to-peak values and no peak areas in the direct spectrum are available. Factor Analysis has been applied to AES depth profiling results. The data matrix in each column contains the linked experimental spectra of the measured elements. Based on the standard spectra the main components of a TiN layer on silicon have been identified by Factor Analysis. The structure of a TiC/C multilayer system has been resolved by the characteristic C_KLL peak shape in C and TiC. Factor Analysis enables to calculate the individual profiles for Ti, TiC and C.     

Determination of the relative sputtering yield of carbon to tantalum by means of Auger electron spectroscopy depth profiling

The relative sputtering yield of carbon with respect to tantalum was determined for 1 keV Ar⁺ ion bombardment in the angular range of 70°–82° (measured from surface normal) by means of Auger electron spectroscopy depth profiling of C/Ta and Ta/C bilayers. The ion bombardment‐induced interface broadening was strongly different for the C/Ta and Ta/C, whereas the C/Ta interface was found to be rather sharp, the Ta/C interface was unusually broad. Still the relative sputtering yields (Y_C/Y_Ta) derived from the Auger electron spectroscopy depth profiles of the two specimens agreed well. The relative sputtering yields obtained were different from those determined earlier on thick layers, calculated by simulation of SRIM2006 and by the fitting equation of Eckstein. The difference increases with increase of angle of incidence. Copyright © 2009 John Wiley & Sons, Ltd.     

Chemometrics-aided RBS analysis of thin films

Summary Elemental analysis of thin films by Rutherford Backscattering Spectrometry (RBS) has been chemometrics-aided in borderline cases: Spectra simulation based on a physical model of Rutherford backscattering is applied for both the prediction of critical analytical parameters and quantitative analysis of overlapping peaks. Non-linear regression using a semi-empirical model of depth profiling allows to improve the determination of concentrations near surface and interface. Statistical tests and multivariate techniques, respectively, enable depth profiles to be judged and compared objectively. Benefits of these methods are demonstrated for high-T_c superconducting and resistor thin layers.     

Quantitative surface analysis by Auger and x-ray photoelectron spectroscopy

Recent developments in quantitative surface analysis by Auger (AES) and x-ray photoelectron (XPS) spectroscopies are reviewed and problems relating to a more accurate quantitative interpretation of AES/XPS experimental data are discussed. Special attention is paid to consideration of elementary physical processes involved and influence of multiple scattering effects on signal line intensities. In particular, the major features of core-shell ionization by electron impact, Auger transitions and photoionization are considered qualitatively and rigorous approaches used to calculate the respective transition probabilities are analysed. It is shown that, in amorphous and polycrystalline targets, incoherent scattering of primary and signal Auger and photoelectrons can be described by solving analytically a kinetic equation with appropriate boundary conditions. The analytical results for the angular and energy distribution, the mean escape depth, and the escape probability as a function of depth of origin of signal electrons as well as that for the backscattering factor in AES are in good agreement with the corresponding Mote Carlo simulation data. Methods for inelastic background subtraction, surface composition determination and depth-profile reconstructions by angle-resolved AES/XPS are discussed. Examples of novel techniques based on x-ray induced photoemission are considered.     

Inter‐diffusion effects in as‐deposited Al/Ni polycrystalline multi‐layers

Al/Ni multi‐layers, deposited by magnetron sputtering at room temperature have been studied by complementary techniques; XPS, sputter depth profiling, electron‐induced X‐ray emission spectroscopy (XES) and X‐ray diffraction (XRD). XPS depth profile technique evidenced an atomic diffusion dominated by Ni atoms. Moreover, the Ni diffusion results in the formation of an amorphous phase with a stoichiometry close to the Al₃Ni aluminide. Copyright © 2008 John Wiley & Sons, Ltd.     

Examples for the improvements in AES depth profiling of multilayer thin film systems by application of factor analysis data evaluation

Factor analysis has proved to be a powerful tool for the full exploitation of the chemical information included in the peak shapes and peak positions of spectra measured by AES depth profiling. Due to its ability to extract the number of independent chemical components, their spectra and their depth distributions, its information content exceeds the one of the usual peak-to-peak height evaluation of AES depth profile data. Using modern software with a graphically interactive user interface the analyst is put into a position, where he can work with Factor Analysis on a physically intuitive level despite of all the matrix algebra mathematics which it is based upon. The progress brought about by Factor Analysis to AES depth profiles of thin films is demonstrated by the analysis of two thin film systems. The first one is a Pt/Ti metallisation used as bottom electrode for ferroelectric thin films, the second one is a multilayer system where a Ti silicide formation of buried Ti/Si bilayers has been induced. Both examples show that Factor Analysis evaluation of AES depth profile data is capable to give access to stoichiometry information and to reveal interfacial layer phases, information which is hardly obtained from the conventional peak-to-peak height data evaluation.     

Examples for the improvements in AES depth profiling of multilayer thin film systems by application of factor analysis data evaluation

Factor analysis has proved to be a powerful tool for the full exploitation of the chemical information included in the peak shapes and peak positions of spectra measured by AES depth profiling. Due to its ability to extract the number of independent chemical components, their spectra and their depth distributions, its information content exceeds the one of the usual peak-to-peak height evaluation of AES depth profile data. Using modern software with a graphically interactive user interface the analyst is put into a position, where he can work with Factor Analysis on a physically intuitive level despite of all the matrix algebra mathematics which it is based upon. The progress brought about by Factor Analysis to AES depth profiles of thin films is demonstrated by the analysis of two thin film systems. The first one is a Pt/Ti metallisation used as bottom electrode for ferroelectric thin films, the second one is a multilayer system where a Ti silicide formation of buried Ti/Si bilayers has been induced. Both examples show that Factor Analysis evaluation of AES depth profile data is capable to give access to stoichiometry information and to reveal interfacial layer phases, information which is hardly obtained from the conventional peak-to-peak height data evaluation.     

A new approach to express ToF SIMS depth profiling

We propose a new approach to express SIMS depth profiling on a TOF.SIMS‐5 time‐of‐flight mass spectrometer. The approach is based on the instrument capability to independently perform raster scans of sputter and probe ion beams. The probed area can be much smaller than the diameter of a sputter ion beam, like in the AES depth profiling method. This circumstance alleviates limitations on the sputter beam–raster size relation, which are critical in other types of SIMS, and enables analysis on a curved‐bottomed sputter crater. By considerably reducing the raster size, it is possible to increase the depth profiling speed by an order of magnitude without radically degrading the depth resolution. A technique is proposed for successive improvement of depth resolution through profile recovery with account for the developing curvature of the sputtered crater bottom in the probed area. Experimental study of the crater bottom form resulted in implementing a method to include contribution of the instrumental artifacts in a nonstationary depth resolution function within the Hofmann's mixing–roughness–information depth model. The real‐structure experiment has shown that the analysis technique combining reduction of a raster size with a successive nonstationary recovery ensures high speed of profiling at ~100 µm/h while maintaining the depth resolution of about 30 nm at a 5 µm depth. Copyright © 2015 John Wiley & Sons, Ltd.     

Application of Sputter-Assisted EPMA to Depth Profile Analysis

 A common problem in depth profile measurement is the calibration of the depth scale. The new technique of sputter assisted electron probe microanalysis offers the possibility of calculating the composition as well as the depth scale solely from the acquired X-ray intensity data without further information, e.g. sputter rates. To achieve a depth resolution that is smaller than the depth of information of the electron probe, i.e. 0.1–1 μm, special deconvolution algorithms must be applied to the acquired data. To assess the capabilities of this new technique it was applied to a Ti/Al/Ti multilayer on Si under different measurement conditions. Quantitative depth profiles were obtained by application of a deconvolution algorithm based on maximum entropy analysis. By comparison of these profiles with AES depth profiles and AFM roughness measurements, it was shown that the limiting factor to the achievable depth resolution is the occurrence of surface roughening induced by the sputtering process rather than the relatively large depth of information of the electron probe. We conclude that for certain applications sputter-assisted EPMA can be regarded as a valid depth profiling technique with a depth resolution in the nm range.     

Low temperature plasma for the preparation of crater walls for compositional depth profiling of thin inorganic multilayers

An indirect, compositional depth profiling of an inorganic multilayer system using a helium low temperature plasma (LTP) containing 0.2% (v/v) SF₆ was evaluated. A model multilayer system consisting of four 10 nm layers of silicon separated by four 50 nm layers of tungsten was plasma‐etched for (10, 20, 30) s at substrate temperatures of (50, 75, and 100) °C to obtain crater walls with exposed silicon layers that were then visualized using time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) to determine plasma‐etching conditions that produced optimum depth resolutions. At a substrate temperature of 100 °C and an etch time of 10 s, the FWHM of the second, third, and fourth Si layers were (6.4, 10.9, and 12.5) nm, respectively, while the 1/e decay lengths were (2.5, 3.7, and 3.9) nm, matching those obtained from a SIMS depth profile. Though artifacts remain that contribute to degraded depth resolutions, a few experimental parameters have been identified that could be used to reduce their contributions. Further studies are needed, but as long as the artifacts can be controlled, plasma etching was found to be an effective method for preparing samples for compositional depth profiling of both organic and inorganic films, which could pave the way for an indirect depth profile analysis of inorganic–organic hybrid structures that have recently evolved into innovative next‐generation materials. Copyright © 2016 John Wiley & Sons, Ltd.