Surface transient effects in ultralow‐energy O2+ sputtering of silicon

It is known that by lowering the impact energy the sputter rate and surface transient width in SIMS will be reduced. However, few studies have been done at ultralow energies over a wide range of impact angles. This study examines the dependence of sputter rate and transient width as a function of O₂⁺ primary ion energy (E_p = 250 eV, 500 eV and 1 keV) and incidence angles of 0–70°. The instrument used is the Atomika 4500 SIMS depth profiler and the sample was Si with 10 delta‐layers of Si_0.7Ge_0.3. We observed that the lowest transient width of 0.7 nm is obtainable at normal and near‐normal incidence with E_p ～ 250 eV and E_p ～ 500 eV. There is no significant improvement in transient width going down in energy from E_p ～ 500 to ～250 eV. The onset of roughening is also not obvious at E_p ～ 250 eV over the whole angular range studied. Although the sputter rate during the surface transient is normally different from that at steady state, only at E_p ～ 250 eV was it observed that the sputter rate remained fairly independent of depth. We conclude that the best working ranges to achieve a narrow transient width and accurate depth calibration are at E_p ～ 250 eV/0° < θ < 20°and 500 eV/0°< θ < 10°. Copyright © 2005 John Wiley & Sons, Ltd.     

Thermophysical Investigations of the Polymorphous Phases of Calcium Carbonate

1. Results of thermodynamic and kinetic investigations for the different crystalline calcium carbonate phases and their phase transition data are reported and summarized (vaterite: V; aragonite: A; calcite: C). A→C: T _tr=455±10°C, Δ_tr H=403±8 J mol^–1 at T _tr, V→C: T _tr=320–460°C, depending on the way of preparation,Δ_tr H=–3.2±0.1 kJ mol^–1 at T _tr,Δ_tr H=–3.4±0.9 kJ mol^–1 at 40°C, S _V ^Θ= 93.6±0.5 J (K mol)^–1, A→C: E _A=370±10 kJ mol^–1; XRD only, V→C: E _A=250±10 kJ mol^–1; thermally activated, iso- and non-isothermal, XRD 2. Preliminary results on the preparation and investigation of inhibitor-free non-crystalline calcium carbonate (NCC) are presented. NCC→C: T _tr=276±10°C,Δ_tr H=–15.0±3 kJ mol^–1 at T _tr, T _tr – transition temperature, Δ_tr H – transition enthalpy, S ^Θ – standard entropy, E _A – activation energy. 3. Biologically formed internal shell of Sepia officinalis seems to be composed of ca 96% aragonite and 4% non-crystalline calcium carbonate. This revised version was published online in July 2006 with corrections to the Cover Date.     

On the role of ion bombardment parameters in AES sputter depth profiling of Ta2O5/Ta with Ar+ and Xe+

Summary In order to study the influence of the ion bombardment parameters on the achievable depth resolution of AES sputter depth profiles, 500 Å thick Ta₂O₅-layers produced by anodic oxidation of polished polycrystalline Ta-substrates were sputter depth profiled with Ar⁺- and Xe⁺-ions in a Scanning Auger Microprobe. The 90%–10% interface widthsz were measured for bombarding ion energies from 0.5 to 5 keV and angles of incidence of 15°, 33° and 56°, respectively.z reduces from 48 Å for Ar⁺-bombardment at = 15° andE = 5 keV to 20 Å when bombarding at = 56° andE = 1 keV. The corresponding values for Xe⁺-bombardment are 31 Å and 18 Å. The influence of the ion bombarding energy and angle on the interface broadening is discussed by means of a simple model. From corresponding evaluations the maximum transportation length of layer species into the substrate is found to be proportional toE ^0.5.

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Zum Einfluß der Ionenbeschußparameter auf die Tiefenauflösung bei der AES-Sputtertiefenprofil-analyse von Ta₂O₅/Ta mit Ar⁺ und Xe⁺

     

Cathodoluminescence Depth Profiling in SiO2:Ge Layers

 For investigation of the luminescent center profile cathodoluminescence measurements are used under variation of the primary electron energy E ₀ = 2…30 keV. Applying a constant incident power regime (E ₀·I ₀ = const), the depth profiles of luminescent centers are deduced from the range of the electron energy transfer profiles dE/dx. Thermally grown SiO₂ layers of thickness d = 500 nm have been implanted by Ge⁺-ions of energy 350 keV and doses (0.5–5)10¹⁶ ions/cm². Thus Ge profiles with a concentration maximum of (0.4 – 4) at% at the depth of d_m≅240 nm are expected. Afterwards the layers have been partially annealed up to T _a = 1100 °C for one hour in dry nitrogen. After thermal annealing, not only the typical violet luminescence (λ = 400 nm) of the Ge centers is strongly increased but also the luminescent center profiles are shifted from about 250 nm to 170 nm depth towards the surface. This process should be described by Ge diffusion processes, precipitation and finally Ge nanocluster formation. Additionally, a Ge surface layer is piled-up extending to a depth of roughly 25 nm.     

Criteria for living systems with a special emphasis on living cationic polymerization of alkenes

A number of new living systems have been reported in recent years. Classic anionic polymerization of nonpolar monomers allows the synthesis of well-defined high molecular weight polymers (DP > 1000), block copolymers, chains with perfect terminal functionalities and behaves as a true living system. Some new systems abuse the term “living polymerization.” A relatively modest criterion for living systems is proposed “3 X 10,000,” i.e., k_p/k_t > 10⁴ mol^-1 L, k_p/k_tr > 10⁴, 1/k_t/tr > 10⁴ s (translated to < 10% of chains deactivated at t ≈ 1000 s), which is related to a typical limit of the polymeric chain dimensions (DP ≈ 100) and standard synthetic manipulations (≈ 15 min). New living cationic systems are discussed in detail with special emphasis on exchange phenomena. © 1993 John Wiley & Sons, Inc.     

Depth profiling of Irganox‐3114 nanoscale delta layers in a matrix of Irganox‐1010 using conventional Cs+ and O2+ ion beams

Depth profiling of an organic reference sample consisting of Irganox 3114 layers of 3 nm thickness at depths of 51.5, 104.5, 207.6 and 310.7 nm inside a 412 nm thick Irganox 1010 matrix evaporated on a Si substrate has been studied using the conventional Cs⁺ and O₂⁺ as sputter ion beams and Bi⁺ as the primary ion for analysis in a dual beam time‐of‐flight secondary ion mass spectrometer. The work is an extension of the Versailles Project on Advanced Materials and Standards project on depth profiling of organic multilayer materials. Cs⁺ ions were used at energies of 500 eV, 1.0 keV and 2.0 keV and the O₂⁺ ions were used at energies of 500 eV and 1.0 keV. All four Irganox 3114 layers were identified clearly in the depth profile using low mass secondary ions. The depth profile data were fitted to the empirical expression of Dowsett function and these fits are reported along with the full width at half maxima to represent the useful resolution for all the four delta layers detected. The data show that, of the conditions used in these experiments, an energy of 500 eV for both Cs⁺ beam and O₂⁺ beam provides the most useful depth profiles. The sputter yield volume per ion calculated from the slope of depth versus ion dose matches well with earlier reported data. Copyright © 2013 John Wiley & Sons, Ltd.     

Kinetics of mixed-controlled oxygen reduction at nafion-impregnated Pt-alloy-dispersed carbon electrode by analysis of cathodic current transients

The effects of Co alloying to Pt catalyst and Nafion pretreatment by NaClO₄ solution on the rate-determining step (RDS) of oxygen reduction at Nafion-impregnated Pt-dispersed carbon (Pt/C) electrode were investigated as a function of the potential step ΔE employing potentiostatic current transient (PCT) technique. For this purpose, the cathodic PCTs were measured on the pure Nafion-impregnated and partially Na⁺-doped Nafion-impregnated Pt/C and PtCo/C electrodes in an oxygen-saturated 1 M H₂SO₄ solution and analyzed. From the shape of the cathodic PCTs and the dependence of the instantaneous current on the value of ΔE, it was confirmed that oxygen reduction at the pure Nafion-impregnated electrodes is controlled by charge transfer at the electrode surface mixed with oxygen diffusion in the solution below the transition potential step |ΔE _tr| in absolute value, whereas oxygen reduction is purely governed by oxygen diffusion above |ΔE _tr|. On the other hand, the RDS of oxygen reduction at the partially Na⁺-doped Nafion-impregnated electrodes below |ΔE _tr| is charge transfer coupled with proton migration, whereas above |ΔE _tr|, it becomes proton migration in the Nafion electrolyte instead of oxygen diffusion. Consequently, it is expected in real fuel cell system that the cell performance is improved by Co alloying since the electrode reaches the maximum diffusion (migration) current even at small value of |ΔE|, whereas the cell performance is aggravated by Nafion pretreatment due to the decrease in the maximum diffusion (migration) current.     

Kinetics of non-isothermal oxidation of anhydrous milk fat rich in conjugated linoleic acid using differential scanning calorimetry

Anhydrous milk fat (AMF) with low, medium, and high content of conjugated linoleic acid (L-, M-, and H-CLA) was oxidized using differential scanning calorimetry (DSC) at five different heating rates (3, 6, 9, 12, and 15 °C min⁻¹) in a temperature range of 100–350 °C. For the first time, kinetic oxidation parameters of AMF rich in CLA are reported. DSC spectra were analyzed to locate the start temperature (T _s), onset temperature (T _on), and maximum heat flow temperature (T _p). These reference points were further used to calculate the effective activation energy (E) and pre-exponential factor (z) using the Ozawa-Flynn-Wall method. The T _s shifts to lower values as the CLA content increases, while the T _on and T _p were less affected by the CLA content. The calculated kinetic parameters not only depend on the ratio between unsaturated to saturated fatty acids but also on the selected reference points. For the L-CLA sample, the E values calculated from T _s, T _on, and T _p were 146.51, 114.11, and 121.31 kJ mol⁻¹, respectively. For the M-CLA sample, the E values calculated were 112.42, 104.06, and 87.41 kJ mol⁻¹, respectively. For the H-CLA sample, the E values calculated were 87.60, 82.42, and 73.64 kJ mol⁻¹, respectively. These variations in E values do not have any physical background according to the compensation effect. In non-isothermal oxidation of AMF, several reactions with different kinetic parameters simultaneously take place and DSC only detects those reactions that have the highest exothermal effect. The T _s is the most consistent reference point to calculate E and z values.     

Addition–fragmentation chain transfer: Molecular weight distributions and retardation in the system methyl methacrylate/methyl α‐(bromomethyl)acrylate

A detailed investigation of addition–fragmentation chain transfer (AFCT) in the free‐radical polymerization of methyl methacrylate (MMA) in the presence of methyl α‐(bromomethyl)acrylate (MBMA) was carried out to elucidate mechanistic details with efficient macromonomer synthesis as an underlying goal. Advanced modeling techniques were used in connection with the experimental work. Curve fitting of simulated and experimental molecular weight distributions with respect to the rate coefficient for addition of propagating radicals to MBMA (k_add) over 60–120 °C resulted in E_add = 21.7 kJ mol^?1 and A_add = 2.18 × 10⁶ M^?1 s^?1 and a very weak temperature dependence of the chain‐transfer constant (E_add ≈ E_p). The rate coefficient for fragmentation of adduct radicals at 60 °C was estimated as k_f ≈ 39 s^?1 on the basis of experimental data of the MMA conversion and the concentration of 2‐carbomethoxy‐2‐propenyl end groups. The approach developed is generic and can be applied to any AFCT system in which copolymerization does not occur and in which the resulting unsaturated end groups do not undergo further reactions. © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 2640–2650, 2004     

Chain transfer by addition–substitution–fragmentation mechanism. I. End–functional polymers by a single-step free radical transfer reaction: Use of a new allylic linear peroxyketal

A new chain transfer agent, ethyl 2-[1-(1-n-butoxyethylperoxy) ethyl] propenoate (EBEPEP) was used in the free radical polymerization of methyl methacrylate (MMA), styrene (St), and butyl acrylate (BA) to produce end-functional polymers by a radical addition–substitution–fragmentation mechanism. The chain transfer constants (C_tr) for EBEPEP in the three monomers polymerization at 60°C were determined from measurements of the degrees of polymerization. The C_tr were determined to be 0.086, 0.91, and 0.63 in MMA, St, and BA, respectively. EBEPEP behaves nearly as an “azeotropic” transfer agent for styrene at 60°C. The activation energy, E_atr, for the chain transfer reaction of EBEPEP with PMMA radicals was determined to be 29.5 kJ/mol. Thermal stability of peroxyketal EBEPEP in the polymerization medium was estimated from the DSC measurements of the activation energy, E_ath = 133.5 kJ/mol, and the rate constants, k_th, of the thermolysis to various temperature. © 1994 John Wiley & Sons, Inc.     

New horizons in sputter depth profiling inorganics with giant gas cluster sources: Niobium oxide thin films

X‐ray photoelectron spectroscopy is used to study a wide variety of material systems as a function of depth (“depth profiling”). Historically, Ar⁺ has been the primary ion of choice, but even at low kinetic energies, Ar⁺ ion beams can damage materials by creating, for example, nonstoichiometric oxides. Here, we show that the depth profiles of inorganic oxides can be greatly improved using Ar giant gas cluster beams. For NbO_x thin films, we demonstrate that using Ar_x⁺ (x = 1000‐2500) gas cluster beams with kinetic energies per projectile atom from 5 to 20 eV, there is significantly less preferential oxygen sputtering than 500 eV Ar⁺ sputtering leading to improvements in the measured steady state O/Nb ratio. However, there is significant sputter‐induced sample roughness. Depending on the experimental conditions, the surface roughness is up to 20× that of the initial NbO_x surface. In general, higher kinetic energies per rojectile atom (E/n) lead to higher sputter yields (Y/n) and less sputter‐induced roughness and consequently better quality depth profiles. We demonstrate that the best‐quality depth profiles are obtained by increasing the sample temperature; the chemical damage and the crater rms roughness is reduced. The best experimental conditions for depth profiling were found to be using a 20 keV Ar₂₅₀₀⁺ primary ion beam at a sample temperature of 44°C. At this temperature, there is no, or very little, reduction of the niobium oxide layer and the crater rms roughness is close to that of the original surface.     

Use of C60 cluster projectiles for sputter depth profiling of polycrystalline metals

We have investigated the merits of fullerene cluster ions as projectiles in time‐of‐flight secondary neutral mass spectrometry (ToF‐SNMS) sputter depth profiling of an Ni:Cr multilayer sample similar to the corresponding NIST depth profiling standard. It is shown that sputter erosion under bombardment with C₆₀⁺ ions of kinetic energies between 10 and 20 keV provides good depth resolution corresponding to interface widths of several nanometres. This depth resolution is maintained during the complete removal of the multilayer stack with a total thickness of 500 nm. This finding is in contrast to the case where atomic Ga⁺ projectile ions of comparable kinetic energy are used, demonstrating the unique features of cluster projectiles in sputter depth profiling. Copyright © 2004 John Wiley & Sons, Ltd.     

Subnanometre depth resolution in sputter depth profiling of Si layers using grazing‐incident low‐energy O2+ and Ar+ ions

The sputter damage profiles of Si(100) by low‐energy O₂⁺ and Ar⁺ ion bombardment at various angles of incidence were measured using medium‐energy ion scattering spectroscopy. It was observed that the damaged Si surface layer can be minimized down to 0.5–0.6 nm with grazing‐incident 500 eV Ar⁺ and O₂⁺ ions at 80°. To illustrate how the damaged layer thickness can be decreased down to 0.5 nm, molecular dynamics simulations were used. The SIMS depth resolution estimated with trailing‐edge decay length for a Ga delta‐layer in Si with grazing‐incident 650 eV O₂⁺ was 0.9 nm, which is in good agreement with the measured damaged layer thickness. Copyright © 2004 John Wiley & Sons, Ltd.     

Incident angle and energy dependences of low‐energy Ar+ ion sputtering of GaAs/AlAs multilayered system

Dependences of the depth resolution in Auger electron spectroscopy sputter‐depth profiling of a GaAs/AlAs superlattice reference material on the incident angle and energy of primary Ar⁺ ions were investigated. The results revealed that the depth resolution is improved for the lower primary energy as a square root of the primary energy of ions at both the incident angles of 50° and 70° , except for 100 eV at 50° , where the significant deterioration of the depth resolution is induced by the preferential sputtering of As in AlAs, and the difference in the etching rate between GaAs and AlAs. The deterioration of the depth resolution, i.e. the difference in the etching rate and the preferential sputtering, observed for 100 eV at 50° was suppressed by changing the incident angle of ions from 50° to 70° , resulting in the high‐depth resolution of ～1.3 nm. The present results revealed that the glancing incidence of primary ions is effective to not only reducing the atomic mixing but also suppressing the difference in the etching rates between GaAs and AlAs and the preferential sputtering in the GaAs/AlAs multilayered system. The results also suggest that careful attention is required for the optimization of conditions of sputter‐depth profiling using GaAs/AlAs superlattice materials under low‐energy ion irradiation. Copyright © 2009 John Wiley & Sons, Ltd.     

An effect of measurement conditions on the depth resolution for low‐energy dual‐beam depth profiling using TOF‐SIMS

An effect of measurement conditions on the depth resolution was investigated for dual‐beam time of flight‐secondary ion mass spectrometry depth profiling of delta‐doped‐boron multi‐layers in silicon with a low‐energy sputter ion (200 eV – 2 keV O₂⁺) and with a high‐energy primary ion (30 keV Bi⁺). The depth resolution was evaluated by the intensity ratio of the first peak and the subsequent valley in B⁺ depth profile for each measurement condition. In the case of sputtering with the low energy of 250 eV, the depth resolution was found to be affected by the damage with the high‐energy primary ion (Bi⁺) and was found to be correlated to the ratio of current density of sputter ion to primary ion. From the depth profiles of implanted Bi⁺ primary ion remaining at the analysis area, it was proposed that the influence of high‐energy primary ion to the depth resolution can be explained with a damage accumulation model. Copyright © 2013 John Wiley & Sons, Ltd.     

Collision spectroscopy in isomer characterization: The case of (E)- and (Z)-p-nitrophenyldiazo tert-butyl sulphides

The structural characterization of the E and Z isomers of p-nitrophenyl-diazo tert-butyl sulphide has been achieved by means of different ionization methods (electron impact, fast atom bombardment, positive-ion chemical ionization) and collision experiments performed under different kinetic energy regimes (high- and low-energy collisions, angle-resolved mass spectrometry and energy-resolved mass spectrometry). The two compounds give rise to identical fragmentation patterns. Collision experiments, both at low energy and in the keV range at a scattering angle of 0°, in M^+· species obtained by electron impact on the two isomers, do not show any significant differences; the same experiments performed with 8 keV ions at a scattering angle of 2° indicate a clear difference in the absolute abundances of the two main daughter ions. High-energy collisions of MH⁺ ions obtained by fast atom bombardment lead to different spectra at both 0° and 2° scattering angles, proving that the energy deposition in the preselected species is an important parameter. Low-energy collisions with argon of MH⁺ ions generated by positive-ion chemical ionization (NH₄⁺) give rise to almost identical energy-resolved mass spectra, whereas the same experiments using helium as target gas lead to a clear distinction between the two isomers.     

Chain transfer constants for vinyl monomers polymerized in methyl oleate and methyl stearate

Chain transfer constants were obtained for styrene, methyl methacrylate, methyl acrylate and vinyl acetate, polymerized in methyl oleate and methyl stearate at 60°C. Transfer constants increased in the order: methyl methacrylate < styrene < methyl acrylate ? vinyl acetate in both solvents. Average values of the transfer parameters were: for methyl oleate, Q_tr = 2.04 × 10^?4, e_tr = 1.08; for methyl stearate, Q_tr = 0.373 × 10^?4, e_tr = 1.01. Indication that polar species predominate in the transition state is supported by the observed order of reactivity. The usual rate dependence appeared to be followed by all of the monomers except vinyl acetate, which was retarded, severely in methyl oleate. Transfer in methyl oleate was about 5.8 times greater than that found in methyl stearate for these four monomers. The internal allylic double bond of methyl oleate had about the same reactivity in transfer as had the terminal unsaturation in N-allylstearamide at 90°C. Rough estimates were obtained of the monomer transfer constants for the long side-chain homologs of these four monomers from the respective monomer transfer constants and the experimental transfer constants, corrected for transfer to the labile groups of the solvent. It was concluded that the rate of polymerization would determine in large measure the degree of polymerization for the reactive 18-carbon homologs but that the molecular weight of poly(vinyl stearate) and (oleate) will be regulated primarily by transfer to monomer.     

Ultrashallow depth profiling using SIMS and ion scattering spectroscopy

The accuracy of ultrashallow depth profiling was studied by secondary ion mass spectrometry (SIMS) and high‐resolution Rutherford backscattering spectroscopy (HRBS) to obtain reliable depth profiles of ultrathin gate dielectrics and ultrashallow dopant profiles, and to provide important information for the modeling and process control of advanced complimentary metal‐oxide semiconductor (CMOS) design. An ultrathin Si₃N₄/SiO₂ stacked layer (2.5 nm) and ultrashallow arsenic implantation distributions (3 keV, 1 × 10¹⁵ cm^?2) were used to explore the accuracy of near‐surface depth profiles measured by low‐energy O₂⁺ and Cs⁺ bombardment (0.25 and 0.5 keV) at oblique incidence. The SIMS depth profiles were compared with those by HRBS. Comparison between HRBS and SIMS nitrogen profiles in the stacked layer suggested that SIMS depth profiling with O₂⁺ at low energy (0.25 keV) and an impact angle of 78° provides accurate profiles. For the As⁺‐implanted Si, the HRBS depth profiles clearly showed redistribution in the near‐surface region. In contrast, those by the conventional SIMS measurement using Cs⁺ primary ions at oblique incidence were distorted at depths less than 5 nm. The distortion resulted from a long transient caused by the native oxide. To reduce the transient behavior and to obtain more accurate depth profiles in the near‐surface region, the use of O₂⁺ primary ions was found to be effective, and 0.25 keV O₂⁺ at normal incidence provided a more reliable result than Cs⁺ in the near‐surface region. Copyright © 2007 John Wiley & Sons, Ltd.     

Enhancement of the positive secondary ion yield during low‐energy,dual‐beam depth profiling of polytetrafluoroethylene with 1‐keV Cs+

This work documents the behaviour of the positive secondary ion yield of bulk polytetrafluoroethylene (PTFE) under dual‐beam depth profiling conditions employing 1 keV Ar⁺, Cs⁺ and SF₅⁺. A unique chemical interaction is observed in the form of a dramatic enhancement of the positive secondary ion yield when PTFE is dual‐beam profiled with 1 keV Cs⁺. The distinct absence of such an enhancement is noted for comparison on two non‐fluorinated polymers, polyethylene terephthalate (PET) and polydimethylsiloxane (PDMS). The bulk PTFE was probed using 15‐keV, ⁶⁹Ga⁺ primary ions in dual beam mode under static conditions; 1‐keV Ar⁺ (a non‐reactive, light, noble element), Cs⁺ (a heavier metallic ion known to form clusters) and SF₅⁺ (a polyatomic species) served as the sputter ion species. The total accumulated primary ion dose was of the order of 10¹⁵ ions/cm², which is well beyond the static limit. The enhancement of the positive secondary yield obtained when profiling with 1‐keV Cs⁺ far exceeds that obtained when SF₅⁺ is employed. An explanation of this apparent reactive ion effect in PTFE is offered in terms of polarisation of C? F bonds by Cs⁺ in the vicinity of the implantation site thereby predisposing them to facile scission. The formation of peculiar, periodic Cs_xF_y⁺ (where y = x ? 1) and Cs_xC_yF_z⁺ clusters that can extend to masses approaching 2000 amu are also observed. Such species may serve as useful fingerprints for fluorocarbons that can be initiated via pre‐dosing a sample with low‐energy Cs⁺ prior to static 15‐keV Ga⁺ analysis. Copyright © 2005 John Wiley & Sons, Ltd.     

Determination of propagation‐rate constant of vinylidene chloride by emulsion polymerization

The propagation‐rate constant of vinylidene chloride (VDC) was determined at 40 and 50 °C, respectively, by applying the so‐called Ugelstad plot to the polymerization‐rate data of the seeded and unseeded emulsion polymerizations of VDC. The values of the propagation‐rate constant k_p thus determined are k_p = 64 dm³/mol · s at 50 °C and k_p = 52 dm³/mol · s at 40 °C, respectively. From these k_p values, the activation energy for propagation reaction was determined to be E_p = 4.2 kcal/mol, which is close to that of vinyl chloride (3.7 kcal/mol). © 2001 John Wiley & Sons, Inc. J Polym Sci A: Polym Chem 39: 1005–1015, 2001