Short-range order in Fe<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Si<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>(<Emphasis Type="Italic">x</Emphasis>=0.05−0.08) alloys with induced magnetic anisotropy

Previously, iron—silicon alloys were investigated using X-ray diffraction and Mössbauer spectroscopy. It was demonstrated that, at low silicon concentrations, the alloys undergo a local separation into regions of the α iron phase depleted in silicon and silicon-rich clusters with a B2 ordering. The structure of locally ordered regions of the B2 phase is characterized by a pair ordering of silicon atoms: the Si—Si pairs are formed by next-nearest neighbors, and the axes of pairs are oriented along the 〈100〉 directions, which are the easy-magnetization axes. The thermomagnetic treatment in a constant magnetic field applied along the 〈100〉 axis induces an axial magnetic anisotropy, results in the formation of an anisotropic distribution of the B2 phase, and leads to a slight decrease in the volume fraction of the coordination 6: 2 with two silicon atoms in the first coordination shell of the iron atom. Therefore, the formation of an anisotropic local order of pairs of silicon atoms occurs as a result of their reorientation.     

Effect of surface roughness on thermal conductivity of VLS-grown rough Si<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> nanowires

The recent demonstration of thermal conductivity of rough electrolessly etched Si nanowire (Hochbaum et al., Nature, 451:163, 2008) attracted a lot of interest, because it could not be explained by the existing theory; thermal conductivity of rough Si nanowires falls below the boundary scattering of the thermal conductivity. However, nanoscale pores presented in the nanowires (Hochbaum et al., Nano Letters, 9:3550–3554, 2009) hinder one to be fully convinced that the surface roughness solely made a contribution to the significant reduction in thermal conductivity. In this study, we synthesized vapor–liquid–solid (VLS) grown rough Si_1−x Ge _x nanowire and measured and theoretically simulated thermal conductivity of the nanowire. The thermal conductivity of rough Si_0.96Ge_0.04 nanowire is an order of magnitude lower than that of bulk Si_0.96Ge_0.04 and around a factor of four times lower than that of smooth Si_0.96Ge_0.04 nanowire. This significant reduction could be explained by the fact that the surface roughness scatters medium-wavelength phonons, whereas the long-wavelength phonons are scattered by phonon boundary scattering, and the short-wavelength phonons are scattered by alloy scattering.     

Electronic structure and ground state parameters of Ru<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript><Emphasis Type="Italic">Me</Emphasis><Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Al refractory alloys

The electronic structure and ground state parameters of B2 RuAl-based refractory alloys have been investigated in the framework of the density functional theory using the exact muffin-tin orbital method in combination with the coherent potential approximation. It has been demonstrated that the number of states at the Fermi level for the Ru_{1 − x} Me _x Al alloys as a function of the alloying metal content has a minimum, which indicates a change in the Fermi surface topology and the presence of specific features in the behavior of elastic constants. It has been concluded that the electronic structure of the alloys can be described in terms of the rigid band model. The nonlinear variations of the lattice parameters of the alloys has been explained.     

X-ray studies of Si<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript>x</Subscript> single crystals

Structural imperfections were studied in Si_1?xGe_x (1–9 at. % Ge) solid-solution single crystals grown using the Czochralski method. The studies were performed using x-ray diffraction topography with laboratory and synchrotron radiation sources, x-ray diffractometry, and synchrotron radiation phase radiography. In all crystals studied, irrespective of the Ge concentration, impurity bands (growth bands) were observed. An increase in the Ge concentration in the range 7–9 at. % was shown to bring about the nucleation and motion of dislocations on a few slip systems and the formation of slip bands. Local block structures were observed in the places where slip bands intersected. The most likely reason for the formation of slip bands is the inhomogeneous distribution of Ge atoms over the ingot diameter and along the growth axis. Therefore, the structure of Si_1?xGe_x solid-solution single crystals can be improved by making them more uniform in composition.     

Spin-wave resonance in Ge<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> films exhibiting percolation ferromagnetism

Magnetic properties of Ge_{1 ? x} Mn _x (x = 0.02, 0.04, 0.08) thin films obtained by ion-implanting Mn⁺ ions into single-crystal Ge plates are investigated. The contributions of the subsystem of dispersed Mn²⁺ ions, Ge³Mn⁵ ferromagnetic clusters, and Mn-enriched ferromagnetic domains of Ge to the magnetic moment of Ge_{1 ? x} Mn _x films are distinguished. In the subsystem of dispersed Mn²⁺ ions in Ge_{1 ? x} Mn _x films at temperatures below 10 K, a spin-wave resonance is observed in the magnetically ordered state due to percolation ferromagnetism. It is established that, in the films with percolation ferromagnetism, the exchange integrals determined from static measurements correspond to those determined by dynamic measurements.     

Magnetocaloric effect in La(Fe<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Si<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>)<Subscript>13</Subscript> ferromagnets

The isothermal changes in the magnetic entropy and the lattice entropy and the adiabatic temperature change in La(Fe_0.88Si_0.12)₁₃ and La(Fe_0.86Si_0.14)₁₃ ferromagnets in a magnetic field are calculated. The calculations are performed with a generalized magnetostriction model of a ferromagnet; the calculation results are compared to experimental data. It is shown that the change in the lattice entropy decreases the magnetocaloric effect and makes it possible to explain the experimental data obtained for La(Fe _x Si_{1 − x} )₁₃ (x = 0.86, 0.88) ferromagnets. The temperature dependences of the bulk compression moduli of these ferromagnets are calculated, and these dependences indicate a strong lattice softening in the vicinity of the magnetic phase transition in them. The thermal expansion coefficient and some magnetic properties of the ferromagnet with x = 0.86 are measured to determine the numerical values of the parameters entering into calculation formulas.     

Calculation of energy characteristics for Si<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>–Si structures with single quantum wells

Energy characteristics of Si_1–x Ge _x –Si quantum-size structures with single quantum wells were calculated numerically based on a four-band k·p method. Analytical expressions for the Luttinger parameters are obtained as functions of the component composition of Si_1–x Ge _x compounds. Analytical expressions for the energy ħω of optical band-to-band transitions are obtained in an effective mass approximation and agree well with numerical calculations by the k·p method. This allows one to determine accurately a range of changes while varying the component compositions and thickness of the active and barrier layers.     

Anomalous electrical properties of Si/Si<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> heterostructures with an electron transport channel in Si layers

The electrical properties of elastically stressed FET-like Si/Si_{1 ? x} Ge _x layered heterostructures (x < 0.2) with a modulated dopant concentration are studied. It is presumed that the amplitude of a narrow (～6-nm-thick) potential well in the Si layer corresponds to the amplitude of a fluctuation potential giving rise to nanoscale inhomogeneities in the Si channel. The structures in question undergo a phase transition from the insulating to metallic behavior as the electron density in the Si channel is varied. In a magnetic field, the structures with metallic conductivity have negative magnetoresistance (NMR) for both the longitudinal and transverse directions of the applied magnetic field with respect to the transport current passing through the structure. Investigating the dependence of NMR on the magnetic field strength showed that the main contribution to NMR is due to weak localization. Peculiar properties are also found in electrical measurements of the diode characteristics of the structures in question. In particular, the capacitance-voltage characteristics of these structures show well-defined resonance features, possibly related to one-and quasi-zero-dimensional inclusions existing in addition to two-dimensional charge carriers in the inhomogeneous two-dimensional film.     

Experimental observation of motion of edge dislocations in Ge/Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Si<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>/Si(001) (<Emphasis Type="Italic">x</Emphasis> = 0.2–0.6) heterostructures

The rotating magnetohydrodynamic flows of a thin layer of astrophysical and space plasmas with a free surface in a vertical external magnetic field are considered in the shallow water approximation. The presence of a vertical external magnetic field changes significantly the dynamics of wave processes in an astrophysical plasma, in contrast to a neutral fluid and a plasma layer in an external toroidal magnetic field. There are three-wave nonlinear interactions in the case under consideration. Using the asymptotic method of multiscale expansions, we have derived nonlinear equations for the interaction of wave packets: three magneto- Poincare waves, three magnetostrophic waves, two magneto-Poincare and one magnetostrophic waves, and two magnetostrophic and one magneto-Poincare waves. The existence of decay instabilities and parametric amplification is predicted. We show that a magneto-Poincare wave decays into two magneto-Poincare waves, a magnetostrophic wave decays into two magnetostrophic waves, a magneto-Poincare wave decays into one magneto-Poincare and one magnetostrophic waves, and a magnetostrophic wave decays into one magnetostrophic and one magneto-Poincare waves. There are the following parametric amplification mechanisms: the parametric amplification of magneto-Poincare waves, the parametric amplification of magnetostrophic waves, the amplification of a magneto-Poincare wave in the field of a magnetostrophic wave, and the amplification of a magnetostrophic wave in the field of a magneto-Poincare wave. The instability growth rates and parametric amplification factors have been found for the corresponding processes.     

Magnetostriction of Fe<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>S (<Emphasis Type="Italic">x</Emphasis> = 0.27) crystals

The magnetostriction of Fe _x Mn_{1 − x} S (x = 0.27) single crystals in strong magnetic fields up to 120 kOe has been investigated. It has been found that the magnetostriction reaches colossal values (±3 × 10⁻⁴) atypical of compounds of 3d elements. It has been found that the magnetostriction changes sign when varying temperature and magnetic field; this behavior indicates an important role of the spin-phonon interactions in the formation of the magnetic order in solid solutions of iron-manganese sulfides.     

Low-frequency optical lattice vibrations in Hg<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Te alloys

The lattice reflection spectra of the Hg_{1 ? x} Cd _x Te (x = 0.06–0.70) alloys measured in the low-frequency range of optical vibrations (the region of the anomalous mode of Hg-Te vibrations in HgTe) at room temperature are interpreted. The low-frequency modes observed at frequencies of 98, 105, and 112 cm^?1 for all compositions of the Hg_{1 ? x} Cd _x Te alloy are assigned to the modes of Hg-Te vibrations, as was previously done for modes of Cd-Te vibrations in the quasi-molecular approximation. According to the double-well potential model for the Hg atom in the crystal lattice of the alloy, the Hg atom either can occupy the center of the anion tetrahedron or can be located in the off-center position. The fundamental strong mode of Hg-Te vibrations at a frequency of about 120 cm^?1 (at T = 300 K) corresponds to the vibrations of the off-center Hg atom, and the low-frequency vibration modes correspond to the vibrations of the Hg atom located at the center of the anion tetrahedron.     

Features of properties of microinhomogeneous PdMn<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Fe<Subscript>1− <Emphasis Type="Italic">x</Emphasis></Subscript> alloys

Complex investigation of the properties of PdMn _x Fe_{1? x} ternary alloys with interacting magnetic and structural order parameters has been performed. It is shown that the complex structural and magnetic state near the transition from the atomically ordered PdFe ferromagnet to the intermetallic antiferromagnetic PdMn compound leads to unusual features not only in magnetic and lattice characteristics but also in electronic properties.     

High-temperature study of SrFe<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Mo<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>O<Subscript>3−<Emphasis Type="Italic">z</Emphasis></Subscript> perovskites

The structure of high-temperature SrFe_{1 − x} Mo _x O_{3 − z} (0 ≤ x ≤ 0.5) phases was studied. Such studies are necessary to understand the mechanism of oxygen transport in membrane materials used for high-temperature oxygen separation.     

Energy spectrum of charge carriers in Bi<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Sb<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> alloys

Analysis of the quantum oscillations of magnetoresistance (the Shubnikov-de Haas effect) in Bi_{1 ? x} Sb _x alloys with an antimony content in the range 0.255 < x < 0.260 has revealed a Lifshitz electronic-topological transition, which quite possibly can be explained in terms of the existence of a saddle point in the energy spectrum of these compositions. Such a peculiarity comes into existence when the direct band gap at the L point of the Brillouin zone in the semiconductor region of the compounds with x > 0.04 becomes negative. This compel one to revise essentially all earlier calculations based on the previously obtained values of the band parameters. In order to check the agreement between the new values of the band parameters and the data on the density of states obtained from measurements of the thermopower in the classical limit of strong magnetic fields, theoretical calculations of the charge carrier concentration n and the density of states at the Fermi level ρ(E _F) have been performed for the case of negative values of the direct band gap at the L point E _gL. The calculations of the parameters n and ρ(E _F) have demonstrated that the change in E _gL and the corresponding correction of the band parameters ensure good agreement with the experimental data. According to these calculations, one electronic-topological transition occurs at an antimony content x ～ 0.165, when a saddle point appears in the energy spectrum. The second transition is associated with the transformation of the six ellipsoids of the Fermi surface into three dumbbell-like figures at antimony concentrations in the range 0.255 < x < 0.260.     

Dielectric relaxation in glassy Se<Subscript>75</Subscript>In<Subscript>25−<Emphasis Type="Italic">x</Emphasis></Subscript>Pb<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> alloys

In this paper we report the effect of Pb incorporation in the dielectric properties of a-Se₇₅In₂₅ glassy alloy. The temperature and frequency dependence of the dielectric constants and the dielectric losses in glassy Se₇₅In_{25 −x} Pb _x (x = 0, 5, 10 and 15) alloys in the frequency range (1 kHz-5 MHz) and temperature range (300–340 K) have been measured. A detailed analysis shows that the dielectric losses are dipolar in nature and can be understood in terms of hopping of charge carriers over a potential barrier as suggested by Elliott for the case of chalcogenide glasses. It has been found that both dielectric constant and the dielectric loss are highly dependent on frequency and temperature and also found to increase with increasing concentration of Pb in binary a-Se₇₅In₂₅ glassy system. The results have been interpreted in terms of increase in the density of defect states by the incorporation of Pb as a metallic additive in the aforesaid glassy system.     

Magnetocaloric effect of compounds in Gd<Subscript>5−<Emphasis Type="Italic">x</Emphasis></Subscript>Dy<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Si<Subscript>2</Subscript>Ge<Subscript>2</Subscript> system

Magnetization of magnetically ordered Gd_5−x Dy _x Si₂Ge₂ compounds with a partial substitution of Gd atoms by isovalent Dy atoms has been investigated. From temperature and field dependences of Gd_5−x Dy _x Si₂Ge₂ alloys with x = 0−2.0 changes of the magnetic part of entropy (ΔS _M ) of alloys are determined. It is established that ΔS _M achieves its maximum values at different temperatures, which linearly depend on the Dy concentration, and their values are comparable with ΔS _M ^max in Gd₅Si₂Ge₂. The obtained data allow us to conclude that the above-mentioned compounds have high magnetocaloric effect and are promising materials for using as a combined working body of magnetic refrigerators operating in the 200–270 K range of temperatures.     

Dependence of the heat capacity of La<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ag<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>MnO<Subscript>3</Subscript> manganites on the Ag content

The heat capacity of La_1?x Ag _x MnO₃ manganites with x = 0.1, 0.15, and 0.2 is measured in the temperature range 77–350 K. An analogy between the effect of doping and the effect of a magnetic field on the temperature dependence of heat capacity of the La_1?x Ag _x MnO₃ system is revealed. As lanthanum is replaced by silver, the volume fraction of the ferromagnetic phase increases, while, in the paramagnetic state, the Jahn-Teller distortions are eliminated. The results of the aforementioned measurements suggest that the phase transition near the Curie point is caused by the competition between the Coulomb and exchange electrostatic interactions. The comparison of the concentration dependences of T _C for La_1?x Sr _x MnO₃ and La_1?x Ag _x MnO₃ points to good potentialities of the latter system from the viewpoint of applications.     

Magnetoresistance and the hall effect of the ordered alloys Fe<Subscript>100 −<Emphasis Type="Italic">x</Emphasis></Subscript>Al<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> (25 < <Emphasis Type="Italic">x</Emphasis> < 35 at. %)

The transverse magnetoresistance and the Hall effect of Fe_{100 ?x} Al _x ordered alloys with x = 26.5?34.1 at. % are studied at temperatures of 77 and 295 K. No saturation is found in the field dependences up to 17 kOe. The magnetoresistance is negative, depends nonmonotonically on the Al concentration, and reaches a maximum |ΔR/R| = 1.6% in the concentration range from 28 to 30 at. %. The coefficient of the anomalous Hall effect depends nonlinearly on the Al concentration and resistivity: it increases to a lesser extent as compared to the resistivity at x = 26–30 at. % and decreases with increasing resistivity at x > 30 at. %. An explanation is proposed for the observed anomalies in the magnetotransport properties in the framework of the model developed for the inhomogeneous magnetic microstructure of the Fe_{100 ?x} Al _x ordered alloys.     

Optical absorption edge of As<Subscript>40–<Emphasis Type="Italic">x</Emphasis></Subscript>Sb<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>S<Subscript>60</Subscript> glassy alloys

The fundamental absorption edge of glassy alloys of an As–Sb–S system was studied in the temperature range 77–300 K. The spectral and thermal behavior of the fundamental absorption edge of As_40–x Sb_xS₆₀ glasses was shown to be described by an exponential function of phonon energy. The temperature and concentration behavior of the optical band gap in the studied glasses was established. The well-known Varshni relationship was used to describe the temperature dependence of the optical band gap.     

Kinetic Properties of the Mn<Subscript>1 – <Emphasis Type="Italic">x</Emphasis></Subscript>Gd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Se Solid Solutions

The results of kinetic study of the Mn_{1 – x}Gd_xSe chalcogenide solid solutions with different substitute concentrations (0 ≤ x ≤ 0.15) in the temperature range of 80–400 K are reported. The difference between the Hall constant and thermopower signs has been found. The electron-type conductivity determined from the Hall constant and hysteresis of the I–V characteristics have been explained by the existence of nanoareas with local electric polarizations. The sharp extrema observed in the temperature dependence of thermopower are explained by splitting of a narrow 4f subband by the crystal field.