Glass formation in the MoO3–Nd2O3–La2O3–B2O3 system

In MoO₃–Nd₂O₃–B₂O₃ and MoO₃–Nd₂O₃–La₂O₃–B₂O₃ systems, glasses were obtained in the region between 20 and 30 mol% Ln₂O₃. A liquid-phase separation region was observed near the MoO₃–B₂O₃ side up to 20 mol% Ln₂O₃ (La, Nd). The amorphous phases were characterized by X-ray diffraction (XRD), differential thermal analysis (DTA), UV–VIS and infrared spectroscopy (IR). According to DTA data B₂O₃-rich glasses are stable up to 630 °C while glasses rich in MoO₃ are stable up to 430 °C. The glasses are transparent in the visible region. Structural models for the glasses network were suggested on the basis of IR spectral investigations. It was established that BO₃ (1380 cm⁻¹), BO₄ (1100–950 cm⁻¹) and MoO₄ (860 cm⁻¹) groups build up the glass network. MoO₆ units (band at 880 cm⁻¹) together with BO₃ units participate in the formation of the glass network with a high MoO₃ content (80–90 mol%).     

The selenium based chalcogenide glasses with low content of As and Sb: DSC, StepScan DSC and Raman spectroscopy study

Thermal properties and structure of As_xSe_100−x and Sb_xSe_100−x glass-forming systems (x = 0, 1, 2, 4, 8 and 16) were studied by conventional and StepScan DSCs and Raman spectroscopy. Compositional dependence of the glass transition temperature, T_g, was determined from reversible part of StepScan DSC records and discussed. The attention was also focused on the crystallization of undercooled melts of these systems. It was found that only selenium crystallizes from undercooled melts of As–Se system and its tendency to crystallize decreases markedly with increasing As content, for arsenic content higher than 4 at.% no crystallization was observed. In the case of Sb–Se system Sb₂Se₃ crystallizes in the first step followed by trigonal selenium crystallization from non-stoichiometric undercooled melt. Sb₂Se₃ crystallizes from incongruent melt with crystallization enthalpy ΔH_c(Sb₂Se₃) = −52 ± 2 J/(g of Sb₂Se₃), Johnson–Mehl–Avrami kinetics of crystallization and kinetic exponent close to 3 was found. Raman spectra were measured to obtain basic information on the structure of both glassy systems.     

Crystal growth, characterization and spectroscopic study of europium-doped NaY(PO3)4

Europium-doped NaY(PO₃)₄ single crystals have been synthesized by the flux method with sizes around 1 mm³. The unit cell parameters at room temperature refined by X-ray powder diffraction are a=7.1510(4) Å; b=13.0070(8) Å; c=9.6973(2) Å; β=90.606(3)°, Z=4 with the space group P2₁/n in monoclinic system. The present single crystals have a needle shape, they are elongated along the a crystallographic direction, and their size is in the 500 μm–1 mm range. The linear thermal expansion tensor parameters were determined, being the maximum value along the b direction, 16.1×10⁻⁶ K⁻¹ and the minimum along the a direction being 11.7×10⁻⁶ K⁻¹. The IR vibration modes attributed to the group P–O are consistent with the crystallographic data concerning the chain aspect of the phosphate anion. This material melts incongruently at 1141 K. Intense visible emissions attributed to Eu^{3+ 5}D₀→⁷F₁, ⁵D₀→⁷F₂ and ⁵D₀→⁷F₄, electronic transitions have been observed after pumping at 355 nm at room temperature.     

Non-isothermal crystallization kinetic studies on MgO–Al2O3–SiO2–TiO2 glass

Thermal stability and crystallization kinetics of the glass 21% MgO, 21.36% Al₂O₃, 53.32% SiO₂ and 4.11% TiO₂ (mol%) has been studied using differential thermal analysis (DTA), dilatometry and X-ray diffraction (XRD). Glass in both bulk and frit forms were produced by melting in platinum crucible at 1600 °C for 1–2 h. From variation of DTA peak maximum temperature with heating rate, the activation energies of crystallization were calculated to be 340 kJ mol⁻¹ and 498 kJ mol⁻¹ for first and second crystallization exotherms, respectively. Crystallization of bulk glass was carried out at various temperatures and for different time durations in the range of 850–1000 °C. The influence of the addition of TiO₂ on the crystallization sequence of the glass was experimentally determined and discussed.     

Structural peculiarities, and electrical and optical properties of 70TeO2·30PbCl2 glasses doped with Pr, prepared in Pt or Au crucibles

The influence of crucibles (Au or Pt) on the structure, electrical, dielectric and optical properties of 70TeO₂·30PbCl₂ glasses doped with Pr³⁺ added as a metal, chloride, or oxide, in concentrations of 500–1500 wt-ppm, is reported. The dc conductivity of ‘pure’ glasses prepared in Au crucibles is two orders of magnitude higher than that of those prepared in Pt crucibles. Upon doping, the dc conductivity of glasses prepared in Pt and Au crucibles increases or decreases, respectively. The static relative permittivity is equal to 33 ± 2. In the range of 640–700 nm, six photoluminescence (PL) peaks were observed, at 641.5, 647.1, 652.4, 660.8, 662.9, and 664.5 nm. In the range of 200–1200 cm⁻¹, seven Raman scattering (RS) peaks were observed at 184, 217, 321, 468, 654, 735 cm⁻¹, and a small peak at 650 cm⁻¹. Both spectra were deconvoluted using symmetrical Gaussian functions. Relative intensities of PL and RS bands depend on the concentration and chemical form of Pr³⁺ and on the material of the crucible. However, positions of these bands are independent of these conditions.     

Te-rich Ge–Te–Se glass for the CO2 infrared detection at 15 μm

Te_80−xGe₂₀Se_x glasses have been prepared along the GeSe₄–GeTe₄ axis using the classical method in silica tube under vacuum. A phase separation domain appears for composition around Te₄₀Ge₂₀Se₄₀. Our attention was turned toward the Te-rich compositions corresponding to 1 < x < 5 at.%. These glasses are transparent from 4 to about 20 μm without any purification of the starting elements. Furthermore the difference ΔT between the crystallization temperature T_x and the vitreous transition temperature T_g lies at about 110 °C that is to say 30 °C higher than for the GeTe₄ reference glass. Finally the introduction of a few percentages of Se makes the glasses much easier to prepare and more stable against crystallization, making them drawable as optical fibers for example. Taking into account their transparency window, encompassing the CO₂ absorption band around 15 μm, the Te_80−xGe₂₀Se_x with 1 < x < 5 at.% could become matchless composition for the CO₂ infrared detection as planed by the Darwin mission of the European Space Agency.     

Structure, electrical, optical and thermal properties of Ge4Sb4Tex (x = 8, 9 and 10) thin films

The crystalline samples of Ge₄Sb₄Te₁₀, Ge₄Sb₄Te₉, and Ge₄Sb₄Te₈ were prepared and their amorphous semiconducting thin films obtained by flash evaporation. Their sheet resistance decreased slowly with temperature up to 147–160 °C with activation energy of electrical conductivity ΔE = 0.40–0.44 eV. Above these temperatures, the sheet resistance drops abruptly by several orders due to crystallization. The drop of resistivity proceeds in two steps. Two steps of phase change were also found on curves of DSC and on the temperature dependence of index of refraction. It pays for slow heating rates, crystallization induced by short (≈30 ns) laser pulses proceeds probably in one step only for all studied samples (as it follows from X-ray diffraction), not only for Ge₂Sb₂Te₅ in which a single phase formation was confirmed. The crystallization temperatures are increasing slightly with decreasing Te content in the series Ge₄Sb₄Te₁₀–Ge₄Sb₄Te₉–Ge₄Sb₄Te₈ from 147 to 160 °C. The X-ray diffractograms revealed that in laser crystallized samples can be found only cubic modification of Ge₂Sb₂Te₅ type (a = 0.6 nm), while the samples annealed (230 °C, 2 h) or annealed after the crystallization with laser pulse, contain also small amounts of hexagonal phase.     

Peculiarities of photoluminescence excited by 157 nm wavelength F2 excimer laser in fused and unfused silicon dioxide

Photoluminescence (PL) spectra and kinetics of high purity amorphous silicon dioxide with ultra low hydroxyl content is studied under the excitation by F₂ excimer laser (157 nm wavelength) pulses. Materials synthesized in the SPCVD plasma chemical process are studied before and after fusion. Two bands are found in the PL spectra: one centered at 2.6–2.9 eV (a blue band) and the other at 4.4 eV (a UV band). Luminescence intensity of unfused material is found to increase significantly with exposure time starting from a very small level, whereas in fused counterpart it does not depend on irradiation time. Both bands show complicated decay kinetics, to which add exponential and hyperbolic functions. The UV band of the unfused material is characterized by decay with exponential time constant τ  4.5 ns and hyperbolic function t⁻ⁿ, where n = 1.5 ± 0.4. For the blue band the hyperbolic decay kinetics with n  1.5 extends to several milliseconds, gradually transforming to the exponential one with τ = 11 ± 0.5 ms. In fused glass relative contribution of the fast component to the UV band is small whereas for the blue one it is great, that allows one to more accurately determine the hyperbolic law factor n = 1.1 ± 0.1 typical for tunneling recombination. Simultaneous intracenter and recombination luminescence, the later occurring with the participation of laser radiation induced defects, add particular features to the decay kinetics. Spectra of the above luminescence processes are different. A less sharp position of bands is associated with the recombination luminescence. The origin of the observed PL features we attribute to the presence of oxygen deficient centers in glass network in the form of twofold coordinated silicon. Such centers being affected by network irregularities can be responsible for the recombination PL component. A great variety of network irregularities is responsible for centers’ structural inequivalence, which causes a non-uniform broadening of PL spectral and kinetic parameters.     

Isochronal crystallization kinetics of Cu60Zr20Ti20 bulk metallic glass

Isochronal crystallization kinetics of Cu₆₀Zr₂₀Ti₂₀ bulk metallic glass has been investigated by differential scanning calorimetry. By means of the Kissinger, Ozawa, Kempen, Matusita and Gao methods, average effective activation energies for the first and second crystallization reactions in Cu₆₀Zr₂₀Ti₂₀ are calculated to be about 375 ± 9 and 312 ± 11 kJ mol⁻¹, respectively, which are smaller than the values deduced from isothermal experiments. Meanwhile, average Avrami exponents, 3.0 ± 0.1 and 3.4 ± 0.2, for two crystallization reactions in isochronal anneals, differ from the value about 2.0 in isothermal anneals. The nonidentity of the Avrami exponents and effective activation energies may be contributed to different crystallization mechanisms and the nature of non-isokinetic between isochronal and isothermal experiments. The values of frequency factor k₀ for the first and second crystallization reactions of Cu₆₀Zr₂₀Ti₂₀ are (1.7 ± 0.3) × 10²⁴ and (7.0 ± 0.8) × 10¹⁸ s⁻¹, respectively, and the large value of k₀ has been discussed in terms of the atomic configuration and interaction.     

Optical properties of thin films of system (As2Se3)80−x(As2Te3)x(SnTe)20 prepared by PLD

Thin amorphous films from system (As₂Se₃)_80−x(As₂Te₃)_x(SnTe)₂₀ were prepared by pulsed laser deposition (PLD) from their bulk glasses and their optical properties were studied by spectral ellipsometry. Spectral dependencies of refractive index, absorption and extinction coefficient and optical gap (1.41–1.66 eV for (As₂Se₃)_80−x(As₂Te₃)_x(SnTe)₂₀ with x = 20 resp. x = 0) were calculated from optical tansmittance, from ellipsometric data by Tauc method. High values of refractive index n₀ (2.49–2.60) and of non-linear χ⁽³⁾ coefficient of index of refraction (4.9–7.5 × 10⁻¹² esu for the glass (As₂Se₃)_80−x(As₂Te₃)_x(SnTe)₂₀ with x = 0 resp. x = 20) made studied thin films of system (As₂Se₃)_80−x(As₂Te₃)_x(SnTe)₂₀ promising candidates for application in optics and optoelectronics.     

The triethyl ammonium salt of O,O′-bis(o-tolyl) dithiophosphate [Et3NH]+[(2-MeC6H4O)2PS2]?

The X-ray structure of the triethyl ammonium salt of O,O′-bis(o-tolyl)dithiophosphate, [Et₃NH]⁺[(2-MeC₆H₄O)₂PS₂]⁻, has been determined. Crystal data: Monoclinic, P2₁/c, a = 15.4342(6) Å, b = 10.1913(4) Å, c = 14.0729(6) Å, β = 100.855(1)^∘, V = 2174.0(2) Å⁻³, Z = 4. The immediate environment around phosphorous is distorted tetrahedral with two sulfur and two oxygen atoms in the coordination sphere, with N–H–S bonding involving only one of the sulfur atoms.     

Raman spectra and thermal analysis of a new lead–tellurium–germanate glass system

Differential scanning calorimetry (DSC) and Raman scattering studies of a new glass system, lead–tellurium–germanate glasses in the form of (90−x)GeO₂·xTeO₂·27PbO·10CaO with x=0, 10, 20, 30, and 40, are reported. The glass samples were fabricated using a conventional melt-quenching method. The Raman spectra and possible glass structures are discussed for different TeO₂ contents. The results indicate that increasing TeO₂ content up to 40 mol% in the glass system decreases the glass transition temperature and melting temperature, and suppresses the crystallization tendency in the fiber pulling temperature range. The lead–tellurium–germanate glass, GTPC, possesses a larger refractive index and a smaller maximum phonon energy than that of a lead–germanate glass, 63GeO₂·27PbO·10CaO, and shows a better thermal stability compared to a tellurite glass, 75TeO₂·20ZnO·5Na₂O (TZN). These improved properties could be beneficial for fabricating rare-earth doped fiber devices.     

Crystallization kinetics and optical band gap studies of Se96In4 glass before and after slow neutron irradiation

Results of differential scanning calorimetry (DSC) under non-isothermal condition on Se₉₆In₄ semiconducting chalcogenide glass before and after slow neutron irradiation, for different exposure times, have been reported and discussed. Some of Sn atoms have been injected into the glass by nuclear transmutation processes and the binary glass is converted into a ternary. This is accompanied by an increase in the activation energy of crystallization, E_c, and in the glass transition temperature, T_g and a decrease in the glass transition activation energy, E_t, in the onset crystallization temperature, T_c and in the peak temperature of crystallization T_p. Optical band gap measurements have also been carried out, before and after irradiation, on identical thin pellets of Se₉₆In₄ glass. The energy band gap, E_g, is found to decrease upon irradiation. These effects have been attributed to a structural change upon doping and to irradiation induced defects.     

Growth and optical properties of self-frequency-doubling laser crystal Yb:LuAl3(BO3)4

Single crystal of Yb:LuAl₃(BO₃)₄(Yb:LuAB) was grown by the flux method for the first time. The cell parameters of the grown crystal were estimated by X-ray diffraction analysis. The result indicates the symmetry of trigonal space group R32, with lattice parameters a=b=9.26372 Å, c=7.21405 Å, V=536.14 Å³, and Z=4. The absorption and emission spectra of Yb:LuAB crystal at room temperature has also been studied. The fluorescence lifetime for Yb:LuAB crystal is about 1.48 ms. The heat capacity was measured from 25 to 500 °C. Its second harmonic generation efficiency in LuAl₃(BO₃)₄ crystal is 3–4 times that of KDP crystal. These results show that Yb:LuAB crystal would be a potential self-frequency-doubling laser crystal.     

Melting enthalpy ΔHm for describing glass forming ability of bulk metallic glasses

A new melting enthalpy ΔH_m criterion for the prediction of glass forming ability (GFA) of alloys is proposed and five Zr–Al–Ni–Cu bulk metallic glasses (BMG) with critical dimension Z_max up to ? 7.5 mm are also developed by us in the light of the optimum ΔH_m of Zr–Al–Ni–Cu alloy system. And then, we researched the relationships between ΔH_m and two GFA parameters (critical cooling rate R_c and Z_max) of five bulk metallic glass (BMG) systems, such as Mg–Ni–Nd, Pd–Cu–Si, La–Al–Ni–Cu, Zr–Al–Ni–Cu and Zr–Ti–Ni–Cu–Be, respectively. The results show that the relationships between ΔH_m and R_c are all concave upward parabolas, and the optimum ΔH_ms for Mg–Ni–Nd, Pd–Cu–Si, Zr–Al–Ni–Cu, Zr–Ti–Ni–Cu–Be and La–Al–Ni–Cu are 10.3960 kJ mol^?1, 21.2202 kJ mol^?1, 19.7146 kJ mol^?1, 18.1455 kJ mol^?1 and 13.1558 kJ mol^?1, respectively. On the contrary, the relationships between ΔH_m and Z_max are all concave downward parabolas, and the optimum ΔH_ms for Mg–Ni–Nd, Pd–Cu–Si, Zr–Al–Ni–Cu, Zr–Ti–Ni–Cu–Be and La–Al–Ni–Cu are 10.5530 kJ mol^?1, 21.0830 kJ mol^?1, 19.6603 kJ mol^?1, 19.7231 kJ mol^?1 and 13.1173 kJ mol^?1, respectively. Furthermore, other BMGs’ R_cs or Z_maxs predicted by above-mentioned relationships satisfactorily agree with the tested results, which indicates that these relationships are reliable. However, the predicted results are reliable only if the main components are similar with the fitted BMGs or the additive is sparkle enough that the alloy’s character does not change. On the whole, the ΔH_m can act as a criterion for quickly predicting the alloy’s GFA and be helpful for the development of new BMGs.     

Kinetics of non-isothermal crystallization of chalcogenide glasses from the Sb32As5S48I15 system

The work considers the kinetics of non-isothermal crystallization, especially from the point of view of the possibility of applying the Augis–Bennett method for the determination of activation energy. The necessity of introducing the usual approximation T ≫ T₀ was analyzed. It was shown that the method can be applied not only in the cases when T ≫ T₀, but also when T > T₀ that is, when the two temperatures differ only by about 10%. We show also that the application of the Augis–Bennett formula in such cases is more accurate the higher the value of the Avrami index n is. The method was applied to study the crystallization kinetics of the glass Sb₃₂As₅S₄₈I₁₅. The results obtained by differential scanning calorimetry (DSC) under non-isothermal conditions were also analyzed using the Kissinger and Matusita method. In the process of glass heating, a single peak is observed for glass transformation and a double peak for glass crystallization. The activation energies of glass transition (E_g) and crystallization (E_c) were determined, as well as the value of the Avrami index n for the second crystallization process. The obtained values for n and m indicate that the crystallization phase involves three-dimensional nucleation and growth. On the other hand, in agreement with the obtained results of the theoretical analysis, such n value justifies the application of the Augis–Bennett method for the investigated glass for which T and T₀ do not differ significantly.     

Crystallization kinetics determination of Pb15Ge27Se58 chalcogenide glass by using the various heating rates (VHR) method

The kinetics of crystallization of Pb₁₅Ge₂₇Se₅₈ was studied by differential scanning calorimetry non-isothermally. Various experimental methods are currently employed for determining the kinetic parameters of crystallization in a glassy system. These parameters include the activation energy of crystallization E (kJ/mol), the kinetic exponent n and the frequency factor K_o (s⁻¹). Recently, a new method (VHR method) has been derived from Johnson-Mehl-Avrami (JMA) transformation rate equation to calculate - in sequence - the crystallization kinetic parameters of a glassy system. The VHR technique has been used to estimate the crystallization parameters of Pb₁₅Ge₂₇Se₅₈ chalcogenide glass under non-isothermal conditions. The average value of E, n and K_o are found equal to 181.74 ± 0.58 (kJ/mol), 1.085 ± 0.023 and (9.196 ± 0.716) × 10¹² (s⁻¹), respectively. The kinetic exponent, n ≈ 1 indicates a surface nucleation mechanism.     

Incorporation of H2 in vitreous silica, qualitative and quantitative determination from Raman and infrared spectroscopy

Incorporation mechanisms of H₂ in silica glass were studied with Raman and infrared (IR) microspectroscopy. Hydrogenated samples were prepared at temperatures between 800°C and 955°C at 2 kbar total pressure. Hydrogen fugacities (f_H2) were controlled using the double capsule technique with the iron–wüstite (IW) buffer assemblage generating f_H2 of 1290–1370 bars corresponding to H₂ partial pressures (P_H2) of 960–975 bars. We found that silica glass hydrogenated under such conditions contains molecular hydrogen (H₂) in addition to SiH and SiOH groups. H₂ molecules dissolved in the quenched glasses introduce a band at 4136 cm⁻¹ in the Raman spectra which in comparison to that of gaseous H₂ is wider and is shifted to lower frequency. IR spectra of hydrogenated samples contain a band at 4138 cm⁻¹ which we assign to the stretching vibration of H₂ molecules located in non-centrosymmetric sites. The Raman and IR spectra indicate that the dissolved H₂ molecules interact with the silicate network. We suggest that the H₂ band is the envelope of at least three components due to the occupation of at least three different interstitial sites by H₂ molecules. Both, Raman and IR spectra of hydrogenated glasses contain bands at 2255 cm⁻¹ which may be due to the vibration of SiH groups. Under the assumption that the reaction Si–O–Si + H₂ → Si–H + Si–O–H describes adequately the ‘chemical dissolution' of H₂ molecules, the SiH concentrations in our samples were determined and the molar extinction coefficient for the SiH absorption band in the infrared (₂₂₅₅(SiH)) could then be estimated to be 45 ± 3 l/mol cm. The solubility of molecular H₂ in our hydrogenated samples was determined using the IR absorption band at 4138 cm⁻¹ and the extinction coefficient given by Shelby [J. Non-Cryst. Solids 179 (1994) 138]. Samples quenched with different cooling rates gave nearly identical Raman and IR spectra, suggesting that the chemical dissolution of hydrogen (SiH and SiOH) can be quenched to room temperature without changing relative concentrations and that no exsolution of hydrogen occurred during the quench.     

Non-isothermal crystallization kinetics study on new amorphous Ga20Sb5S75 and Ga20Sb40S40 chalcogenide glasses

Bulk glasses of the system Ga₂₀Sb_xS_80−x (x = 5 and 40) were prepared for the first time by the known melt quenching technique. Non-isothermal differential scanning calorimetric (DSC) measurements of as-quenched Ga₂₀Sb_xS_80−x (x = 5 and 40) chalcogenide glasses reveal that the characteristic temperatures e.g. the glass transition temperature (T_g), the temperature corresponding to the maximum crystallization rate (T_p) recorded in the temperature range 400-650 K for x = 5 and 480-660 K for x = 40 are strongly dependent on heating rate and Sb content. Upon heating, these glasses show a single glass transition temperature (T_g) and double crystallization temperatures (T_p1 and T_p2) for x = 5 which overlapped and appear as a single crystallization peak (T_p) for x = 40. The activation energies of crystallization E_c were evaluated by three different methods. The crystallization data were examined in terms of recent analysis developed for non-isothermal conditions. The crystalline phases resulting from (DSC) have been identified using X-ray diffraction.     

Crystallization behavior of (GeS2)0.1(Sb2S3)0.9 glass

The crystal growth kinetics of antimony trisulfide in (GeS₂)_0.1(Sb₂S₃)_0.9 glass has been studied by microscopy and DSC. The linear crystal growth kinetics has been confirmed in the temperature range 492 ? T ? 515 K (E_G = 405 ± 7 kJ mol⁻¹). The applicability of standard growth models has been assessed. From the crystal growth rate corrected for viscosity plotted as a function of undercooling it has been found that the most probable mechanism is interface controlled 2D nucleated growth. The non-isothermal DSC data, corresponding to the bulk sample, can be described by the Johnson-Mehl-Avrami equation.