Radiation-stimulated modification of C60 films on Si-oxide surfaces

The electronic structure of C₆₀/SiO_x/Si(1 0 0) interface was studied by photoemission (valence-bands, C 1s, and Si 2p core levels) and near-edge X-ray absorption fine structure (C 1s threshold) spectroscopies. It was concluded that the SiO_x/Si surface is non-reactive with respect to the interaction with C₆₀. The exposure of the C₆₀/SiO_x/Si system under non-monochromatic synchrotron radiation causes modification of the electronic structure of this system. It is explained by polymerization of the C₆₀ molecules and arising a strong ionic-like interaction of the polymerized C₆₀ with the SiO_x surface. Annealing of this system up to temperatures of 550–625 °C leads to complete desorption of the C₆₀ molecules from the non-irradiated sample areas while the modified by radiation fullerenes remain attached to the substrate.     

Preparation of cadmium stannate films by spray pyrolysis technique

Cadmium stannate thin films were prepared by spray pyrolysis technique using cadmium acetate and tin(II) chloride precursors at substrate temperatures 450 °C and 500 °C. XRD pattern confirms the formation of orthorhombic (1 1 1) cadmium stannate phase for the film prepared at substrate temperature of 500 °C, whereas, films prepared at 450 °C are amorphous. Film formation does not occur at substrate temperature from 300 to 375 °C. SEM images reveal that the surface of the prepared Cd₂SnO₄ film is smooth. The average optical transmittance of ∼86% is obtained for the film prepared at substrate temperature of 500 °C with the film thickness of 400 nm. The optical band gap value of the films varies from 2.7 to 2.94 eV. The film prepared at 500 °C shows a minimum resistivity of 35.6 × 10⁻⁴ Ω cm.     

Preparation of PEO ceramic coating on Ti alloy and its high temperature oxidation resistance

Ceramic coatings were prepared in Na₂SiO₃–Na₂CO₃–NaOH system by pulsed bi-polar plasma electrolytic oxidation on Ti–6Al–4V alloy. The phase composition, structure and the elemental distribution of the coatings were studied by XRD, SEM and energy dispersive spectroscopy, respectively. The thermal shock resistance of the coated samples at 850 °C was evaluated by the thermal shock tests. The high temperature oxidation resistance of the coating samples at 500 °C was investigated. The results showed that the coating was mainly composed of rutile- and anatase TiO₂, Increasing the concentration of Na₂SiO₃, TiO₂ content decreased gradually while the thickness of the coating increased. There were a large amount of micro pores and sintered particles on the surface of the coatings. Increasing concentration of Na₂SiO₃, the sintered particles on the surface turned large, and the Si content increased while the Ti content decreased gradually. When the concentration of Na₂SiO₃ was 15 g/L, the thermal shock resistance of the coatings was better than that of the coatings that prepared under other Na₂SiO₃ concentrations. The coating samples prepared under the optimized technique process based on the thermal shock tests improved the high temperature oxidation resistance at 500 °C greatly, whether considering the isothermal oxidation or the cyclic oxidation.     

Low-temperature synthesis of Zn2SiO4:Mn green photoluminescence phosphor

Zn₂SiO₄:Mn green phosphor having comparable photoluminescence (PL) efficiency with commercial phosphor has been synthesized at 1000 °C using solid state reactions involving ZnO, silicic acid and manganese acetate. The water of crystallization attached to SiO₂ in silicic acid whose dissociation at 1000 °C seem to promote the sintering efficiency of Zn₂SiO₄:Mn. Incremental ZnO addition and re-firing at 1000 °C promote the diffusion rate of ZnO and SiO₂. The formation of a single crystalline phase of willemite structure in the samples was confirmed by powder XRD measurements. The phosphor exhibit an intense excitation band centered around 275 nm and a relatively weak excitation centered around 380 nm while the broad band green emission peaks at 524 nm. Other parameters studied include PL spectra, grain morphology, ZnO/SiO₂ molar ratio, Mn concentration, co-dopant/flux and the effect of chemical forms of Mn dopant as well as silica on the PL efficiency.     

Hybrid Nafion–inorganic oxides membrane doped with heteropolyacids for high temperature operation of proton exchange membrane fuel cell

Performance of the proton exchange membrane fuel cell (PEMFC) with composite Nafion–inorganic additives such as silicon oxide (SiO₂), titanium dioxide (TiO₂), tungsten oxide (WO₃), and SiO₂/phosphotungstic acid (PWA) has been studied for the operation of temperature of above 100 °C. These composite membranes are prepared by the way of blending of the inorganic oxides with Nafion solution by the recasting procedure. The physico-chemical properties studied by means of scanning electron microscopy (SEM) and X-ray diffraction (XRD) techniques have proved the uniform and homogeneous distribution of these oxides and the consequent enhancement of crystalline character of these membranes. The thermogravimetry analysis (TGA) results have indicated that the additives TiO₂ and WO₃ have accelerated decomposition of the membrane at an earlier temperature than that of the Nafion membrane. The modified membranes have shown higher uptake of water relative to that of the unmodified membranes. The proton conductivity of the modified membranes, except that of the Nafion/TiO₂, is found to be close to that of the native Nafion membrane at high temperature and at 100% relative humidity (RH), however, it was much higher at low RH. The performance of these modified membranes in the PEMFC operated at 110 °C and 70% RH is better than that of Nafion membrane and is found in the order of Nafion/SiO₂/PWA > Nafion/SiO₂ > Nafion/WO₃ > Nafion/TiO₂.     

NH4PO3/SiO2 composite as electrolyte for intermediate temperature fuel cells

NH₄PO₃/SiO₂ composite based electrolyte with SiO₂ as supporting matrix was prepared. A thermogravimetric analysis was performed. Its electrochemical properties were investigated by an impedance spectroscopy within the temperature range of 100–300 °C under dry and humid atmospheres. The maximum conductivity is 6 mS cm^− 1 at 300 °C under dry N₂ and 0.1 S cm^− 1 at 200 °C under humid N₂.     

Comparative PEEM and AES study of surface morphology and composition of Cu films on Si and 3C–SiC substrates

We have conducted photoemission electron microscope (PEEM) and Auger electron spectroscopy (AES) studies on the Cu(30 nm)/3C–SiC(1 0 0) and Cu(30 nm)/Si(1 0 0) samples annealed successively up to 850 °C. With PEEM, lateral diffusion of Cu atoms on the 3C–SiC substrate was observed at 400 °C while no lateral diffusion was seen for the Cu/Si(1 0 0) samples up to 850 °C. The 30 nm Cu thin film on 3C–SiC began to agglomerate at 550 °C, similar to the case for the Cu/Si(1 0 0) system. No further spread of the lateral diffusion region was found in subsequent annealing up to 850 °C for Cu/3C–SiC while separated regular-sized dot structures were found at 850 °C for Cu/Si(1 0 0). AES studies of Cu/Si(1 0 0) system showed partial interface reaction during Cu deposition onto the Si(1 0 0) substrate and oxidation of the resultant Cu₃Si to form SiO₂ on the specimen surface at room temperature in air. Surface segregation of Si and C was observed after annealing at 300 °C for Cu/Si(1 0 0) and at 850 °C for the Cu/3C–SiC system. We have successfully elucidated the observed phenomena by combining PEEM and AES considering diffusion of the constituent elements and/or reaction at interfaces.     

Compositional and structural medium energy ion scattering study of the temperature mediated diffusion determination at the Co/V interface in Co/V/MgO(100)

The impact of annealing at 300 °C on the elemental composition and the atomic structure of the Co/V interface in the 2.5 Å Co/70 Å V/MgO (100) system has been investigated by medium energy ion scattering (MEIS) using 100 keV He⁺ ions. By combining the experimental MEIS results with simulations we show that, while the Co/V interface is abrupt for the system kept at room temperature, annealing at 300 °C induces a strong interdiffusion leading to a Co_0.5V_0.5 surface bcc alloy with a high degree of disorder. Additionally, the MEIS data suggest that the surface of the annealed system is slightly rumpled by ~ 0.2 Å.     

The preparation and characterization of nanoparticle TiO2/Ti films and their photocatalytic activity

Nanoparticle TiO₂/Ti films were prepared by a sol–gel process using Ti(OBu)₄ as raw material, the as-prepared film samples were also characterized by TG-DTA, XRD, TEM, SEM, XPS, DRS, PL, SPS and EFISPS testing techniques. TiO₂ nanoparticles experienced two processes of phase transition, i.e. amorphous to anatase and anatase to rutile at the calcining temperature range from 450 to 700 °C. TiO₂ nanoparticles calcined at 600 °C had similar composition, structure, morphology and particle size with the internationally commercial P-25 TiO₂ particles. Thus, the conclusion that 600 °C might be the most appropriate calcining temperature during the preparation process of nanoparticle TiO₂/Ti film photocatalysts could be made by considering the main factors such as the properties of TiO₂ nanoparticles, the adhesion of nanoparticle TiO₂ film to Ti substrate, the effects of calcining temperature on Ti substrate and the surface characteristics and morphology of nanoparticle TiO₂/Ti film for the practice view. The Ti element mainly existed on the nanoparticle TiO₂/Ti(3) film calcined at 600 °C as the chemical state of Ti⁴⁺, while O element mainly existed as three kinds of chemical states, i.e. crystal lattice oxygen, hydroxyl oxygen and adsorbed oxygen with increasing band energy. Its photoluminescence (PL) spectra with a peak at about 380 nm could be observed using 260 nm excitation, possibly resulting from the electron transition from the bottom of conduction band to the top of valence band. The PL peak position was nearly the same as the onset of its diffuse reflection spectra (DRS) and surface photovoltage spectroscopy (SPS), demonstrating that the effects of the quantum size on optical property were greater than that of the Coulomb and surface polarization. The PL spectra with two peaks related to the anatase and rutile, respectively, could be observed using the excited wavelength of 310 nm. Weak PL spectra could be observed using the excited wavelength of 450 nm, resulting from surface states. In addition, during the experimental process of the photocatalytic degradation phenol, the photocatalytic activity of nanoparticle TiO₂/Ti film with three layers calcined at 600 °C was the highest.     

Photoreactive titanium oxide layer prepared from a titanium naphthenate

Highly transparent titanium oxide thin films were prepared on soda-lime–silica slide glass substrates from a titanium naphthenate precursor. Films prefired at 500 °C for 10 min were finally heat treated at 500 °C for 30 min in air. Crystallinity of the films was analyzed by high resolution X-ray diffraction analysis. A sharp absorption edge of the TiO₂ film was observed. The estimated energy band gap for the film is larger than that of single crystal TiO₂.     

A metastable Fe(A) termination at the Fe3O4(001) surface

A metastable Fe(A) terminated Fe₃O₄(001) surface was prepared by tailoring the surface preparation conditions. STM, LEIS and LEED are utilized to demonstrate that annealing the Ar⁺ sputtered surface to 350 °C produces an Fe(A) terminated surface with a (√2 × √2)R45° superstructure. Within the superstructure both single Fe atoms and Fe dimer species are observed. The surface is reoxidized upon annealing to higher temperatures, eventually leading to the recovery of the energetically favorable Jahn–Teller distorted surface at 700 °C. The ability to reproducibly prepare the Fe(A) termination in this simple manner will allow investigations into the structure–function relationship for this important technological material.     

Ultrathin Y2O3(111) films on Pt(111) substrates

The growth of ultrathin films of Y₂O₃(111) on Pt(111) has been studied using scanning tunneling microscopy (STM), X-ray photoemission spectroscopy (XPS), and low energy electron diffraction (LEED). The films were grown by physical vapor deposition of yttrium in a 10^? 6 Torr oxygen atmosphere. Continuous Y₂O₃(111) films were obtained by post-growth annealing at 700 °C. LEED and STM indicate an ordered film with a bulk-truncated Y₂O₃(111)–1 × 1 structure exposed. Furthermore, despite the lattices of the substrate and the oxide film being incommensurate, the two lattices exhibit a strict in-plane orientation relationship with the [11?0] directions of the two cubic lattices aligning parallel to each other. XPS measurements suggest hydroxyls to be easily formed at the Y₂O₃ surface at room temperature even under ultra high vacuum conditions. The hydrogen desorbs from the yttria surface above ~ 200 °C.     

Luminescence properties of green emission of SiO2/Zn2SiO4:Mn nanocomposite prepared by sol–gel method

Green light emitting Mn²⁺ doped Zn₂SiO₄ particles embedded in SiO₂ host matrix were synthesized by a sol–gel method. After the incorporation of ZnO:Mn nanoparticles in a silica monolith using sol–gel method with supercritical drying of ethyl alcohol in two steps, it was heat treated in air at 1200 °C for 2 h in order to obtain the SiO₂/α-Zn₂SiO₄:Mn nanocomposites. The microstructure of phosphor crystals was characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). XRD results indicate that the pure phase α-Zn₂SiO₄ with rhombohedral structure was obtained after thermal treatment at 1200 °C. The SiO₂/α-Zn₂SiO₄:Mn nanocomposites with a Mn doping concentration of 1.5 at% exhibit two broadband emissions in the visible range: a strong green emission at around 525 nm and a second one in the range between 560 and 608 nm. This nanocomposite with a Mn doping concentration of 0.05 shows the highest relative emission intensity. Upon 255 nm excitation, the luminescence decay time of the green emission of Zn₂SiO₄:Mn around 525 nm is 11 ms. The luminescence spectra at 525 nm (⁴T₁–⁶A₁) and lifetime of the excited state of Mn²⁺ ions-doped Zn₂SiO₄ nanocrystals are investigated.     

Optical and electrical properties of Ge-implanted SiO2 layers on n-Si and p-Si

Ge ions of 100 keV were implanted into a 120 nm-thick SiO₂ layer on n-Si at room temperature while those of 80 keV were into the same SiO₂ layer on p-Si. Samples were, subsequently, annealed at 500°C for 2 h to effectively induce radiative defects in the SiO₂. Maximum intensities of sharp violet photoluminescence (PL) from the SiO₂/n-Si and the SiO₂/p-Si samples were observed when the samples have been implanted with doses of 1×10¹⁶ and 5×10¹⁵ cm⁻², respectively. According to current–voltage (I–V) characteristics, the defect-related samples exhibit large leakage currents with electroluminescence (EL) at only reverse bias region regardless of the type of substrate. Nanocrystal-related samples obtained by an annealing at 1100°C for 4 h show the leakage at both the reverse and the forward region.     

Growth and characterization of CoSi2 films on Si (1 0 0) substrates

In the present work, a special solid phase epitaxy method has been adapted for the preparation of CoSi₂ film. This method includes an epitaxial growth of Co films on Si (1 0 0) substrate, and in situ annealing of the Co/Si films in vacuum. It has been found that at the substrate temperature of 360°C, fcc cobalt film grows epitaxially on the Si (1 0 0) surface. The crystallographic orientation relations between fcc Co film and Si substrate determined from the electron diffraction result are: (0 0 1) Co//(0 0 1) Si, [1 0 0] Co//[1 1 0]Si. Upon annealing at temperatures range from 500 to 600°C, Co film reacts with Si substrate and transforms into CoSi₂. The CoSi₂ films prepared by this way are characterized by XTEM, XPS and AFM.     

Rare-earth doped (Lu0.85Y0.15)2SiO5 nanocrystalline powders obtained by polymer assisted sol–gel synthesis

In the present work we explored the possibility of obtaining nanocrystalline (Lu_0.85Y_0.15)₂SiO₅ (LYSO) powders using polymer assisted sol–gel method. The synthesis started from TEOS as alkoxide precursor while polyethylene glycol with average molecular weight of 4000 was used as fuel. The resulting powders were obtained by firing gels in two ways: in conventional furnace and in microwave oven, with further annealing. This modified sol–gel synthetic route enabled production of pure phase LYSO powders at much lower temperatures (1050 °C) compared to classical, -solid-state methods (1400 °C). Crystallization kinetics are examined using differential thermal analysis, and rather low values of crystallization activation energies (around 12 kJ/mol) were found, revealing good potential of this method for low-temperature production of LYSO powder.     

Oxidation of ultra-thin Ti films on Mo(100): Soft X-ray photoelectron spectroscopy study

Titanium oxide films grown on Mo(100) have been investigated by low-energy electron diffraction (LEED) and soft X-ray photoelectron spectroscopy (PES). The film was grown by Ti deposition on Mo(100) and subsequent oxidation of the film by 12 L of O₂ exposure at room temperature. As the film was annealed at 700–1000 °C, the film in which the Ti atoms were in a Ti³⁺ oxidation state was formed. As the film was annealed at 1100–1500 °C, the oxidation state of Ti in the film was converted to Ti²⁺. The valence electronic structure of the film was measured under the condition that the emission from the Mo substrate was minimized due to a Cooper minimum of the Mo 4 d photoionization cross sections (hν = 100 eV). It was found that the Ti 3 d band in normal-emission spectra was increased in intensity when the film was annealed at 1100–1500 °C. As the film was annealed at 1300 °C for 10 s and 20 s, the film-covered Mo(100) gave (2 × 2) and (4 × 1) LEED patterns, respectively. The two-dimensional band structure of the (2 × 2) system was investigated by angle-resolved PES, and it was found that the film with a (1 × 1) periodicity with respect to the Mo(100) substrate existed in the (2 × 2) system.     

Facile synthesis of nanostructured CuO for low temperature NO2 sensing

Detection of environmental pollutant and health hazardous, nitrogen dioxide (NO₂) is reported using nanostructured CuO particulates (NPs). Powder X-ray diffraction and field emission scanning electron microscopy were used to probe crystalline phase and morphological details, respectively. Small crystallites of ∼10–12 nm and a strain of 4% were found in the leafy structure of CuO. Raman studies further supported the presence of nanosized CuO phase. This is the first instance of utilizing CuO NPs to detect 5 ppm of NO₂ even at a low operating temperature of 50 °C. The highest sensitivity for NO₂ was observed at 150 °C, for the first time, in CuO NPs. A low activation energy of 0.18 eV was found for sensing process. The CuO NPs sensor responded to NO₂ within a few seconds and recovered totally under a minute. The kinetics of the NO₂ gas adsorption on the CuO film surface was described following the Elovich model.     

Fast and wide-band response infrared detector using porous PZT pyroelectric thick film

Porous lead zirconate titanate (PbZr_0.3Ti_0.7O₃, PZT30/70) thick films and detectors for pyroelectric applications have been fabricated on alumina substrates by screen-printing technology. Low temperature sintering of PZT thick films have been achieved at 850 °C by using Li₂CO₃ and Bi₂O₃ sintering aids. The microstructure of PZT thick film has been investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The dielectric properties were measured using HP 4284 at 1 kHz under 25 °C. The permittivity and loss tangent of the thick films were 94 and 0.017, respectively. Curie temperature of PZT thick film was 425 °C as revealed by dielectric constant temperature measurement. The pyroelectric coefficient was determined to be 0.9 × 10⁻⁸ Ccm⁻² K⁻¹ by dynamic current measurement. Infrared detector sensitive element of dual capacitance was fabricated by laser directly write technology. Detectivity of the detectors were measured using mechanically chopped blackbody radiation. Detectivity ranging from 1.23 × 10⁸ to 1.75 × 10⁸ (cm Hz^1/2 W⁻¹) was derived at frequency range from 175.5 Hz to 1367 Hz, and D^*’s −3 dB cut-off frequency bandwidth was 1.2 kHz. The results indicate that the infrared detectors based on porous thick films have great potential applications in fast and wide-band frequency response conditions.     

Preparation and characterization of iron–molybdate thin films

Mixed Fe–Mo oxides are used in industrial catalytic processes of selective oxidation of methanol to formaldehyde. For better understanding of the structure-reactivity relationships of these catalysts we aim to prepare well-ordered iron–molybdate thin films as model catalysts. Here we have studied Mo deposition onto Fe₃O₄ (111) thin films produced on Pt(111) as a function of Mo coverage and annealing temperature using LEED, AES, STM and IRAS. At low temperatures, the iron oxide film is covered by Mo = O terminated molybdena nanoparticles. Upon oxidation at elevated temperatures (T > 900 K), Mo species migrate into the film and form new bonds with oxygen in the film. The resulting films maintain the crystal structure of Fe₃O₄, and the surface undergoes a (√3 × √3)R30° reconstruction. The structure is rationalized in terms of Fe substitution by Mo in the surface layers.