Evolution of CoSi2 buried structures created by high temperature Co+ ion implantation into Si(1 0 0) during post-implantation annealing

The evolution of buried structures of cobalt disilicide, which are formed in a Si(1 0 0) matrix by 400 keV Co⁺ ion implantation at 875 K substrate temperature with subsequent rapid thermal annealing at 1275 K was studied by cross-sectional transmission electron microscopy (X-TEM). The analysis of identical samples with successive variations of the implanted doses and annealing times allows a detailed observation of the role of defects, created by the ion flux, on the process of ripening and growth of CoSi₂ precipitates. We found that transport of the implanted material along diffusive links leads to the formation of a secondary CoSi₂ distribution between the main layer and the surface. Post-implantation annealing results in the evolution of defects into dislocations, which affects the mobility and therefore the growth of CoSi₂ precipitates. Increasing the annealing time leads to the separate growth of precipitates in each layer. The result is not the formation of a single uniform buried layer because the distance between the individual layers is too large due to a screening effect, which operates during the ripening stage.     

Structural and magnetic properties of thin epitaxial Fe films on (1 1 0) GaAs prepared by metalorganic chemical vapor deposition

Iron films have been grown on (1 1 0) GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition at substrate temperatures (T_s) between 135°C and 400°C. X-ray diffraction (XRD) analysis showed that the Fe films grown at T_s between 200°C and 330°C were single crystals. Amorphous films were observed at T_s below 200°C and it was not possible to deposit films at T_s above 330°C. The full-width at half-maximum of the rocking curves showed that crystalline qualities were improved at T_s above 270°C. Single crystalline Fe films grown at different substrate temperature showed different structural behaviors in XRD measurements. Iron films grown at T_s between 200°C and 300°C showed bulk α-Fe like behavior regardless of film thickness (100–6400 Å). Meanwhile, Fe films grown at 330°C (144 and 300 Å) showed a biaxially compressed strain between substrate and epilayer, resulting in an expanded inter-planar spacing along the growth direction. Magnetization measurements showed that Fe films (>200 Å) grown at 280°C and 330°C were ferromagnetic with the in-plane easy axis along the [1 1 0] direction. For the thinner Fe films (⩽200 Å) regardless of growth temperature, square loops along the [1 0 0] easy axis were very weak and broad.     

Structural and magnetic properties of BCC Fe/Co (0 0 1) superlattices

In thin layered Fe/Co (0 0 1), grown on MgO (0 0 1), both Fe and Co crystallize in the body-centered cubic (BCC) structure, as seen in a series of superlattices where the layer thickness of the components is varied from two to twelve atomic monolayers. These superlattices have novel magnetic properties as observed by magnetization and polarized neutron reflectivity measurements. There is a significant enhancement of the magnetic moments of both Fe and Co at the interfaces. Furthermore, the easy axis of the system changes from [1 0 0] for films of low cobalt content to [1 1 0] for a Co content exceeding 33%. No indication of a uniaxial anisotropy component is found in any of the samples. The first anisotropy constant (K₁) of BCC Co is found to be negative with an estimated magnitude of 110 kJ/m³ at 10 K. In all cases, the magnetic moments of Fe and Co have parallel alignment.     

Identification of iron oxide phases in thin films grown on Al2O3(0 0 0 1) by Raman spectroscopy and X-ray diffraction

We report on the identification of Fe₃O₄ (magnetite) and α-Fe₂O₃ (hematite) in iron oxide thin films grown on α-Al₂O₃(0 0 0 1) by evaporation of Fe in an O₂-atmosphere with a thickness of a few unit cells. The phases were observed by Raman spectroscopy and confirmed by X-ray diffraction (XRD). Magnetite appeared independently from the substrate temperature and could not be completely removed by post-annealing in an oxygen atmosphere as observed by X-ray diffraction. In the temperature range between 400 °C and 500 °C the X-ray diffraction shows that predominantly hematite is formed, the Raman spectrum shows a mixture of magnetite and hematite. At both lower and higher substrate temperatures (300 °C and 600 °C) only magnetite was observed. After post-annealing in an O₂-atmosphere of 5 × 10^?5 mbar only hematite was detectable in the Raman spectrum.     

Magnetic anisotropy of epitaxial Fe layers grown on Si(0 0 1)

The magnetic properties of epitaxial iron films up to 80 monolayers (ML) thickness grown on Si(0 0 1) by using a template technique were investigated by means of superconducting quantum interference device and magneto-optic Kerr effect techniques. The thinnest films investigated (∼3 ML) exhibit a composition close to Fe₃Si with a Curie temperature below room temperature (RT) and strong out-of-plane remanent magnetization that reflects the presence of a dominant second order surface anisotropy term. Thicker films (⩾4 ML) are ferromagnetic at RT with remanent magnetization in film-plane and a composition closer to pure Fe with typically 8–10% silicon content. When deposited at normal incidence such films show simple in-plane fourfold anisotropy without uniaxial contribution. The relevant fourth-order effective anisotropy constant K₄^eff was measured versus film thickness and found to change its sign near 18 ML. The origin of this remarkable behavior is investigated by means of a Néel model and mainly traced back to fourth-order surface anisotropy and magneto-elastic effects related to the large biaxial in-plane compressive strain up to 3.5% in the thinnest (⩽25 ML) films.     

Initial stage of CdTe on Si(1 0 0) grown by MBE

The initial stage of CdTe growth on silicon has been investigated using angle-resolved photoemission and scanning tunneling microscopy (STM). In order to study initial stage of CdTe on Si, we have desorbed CdTe by annealing at 600 °C so that only one monolayer of Te remains on the Si(1 0 0) substrate. Te/Si(1 0 0)2×1 superstructure has been observed by LEED. Photoemission spectra indicate that Te atoms bond with the Si dangling bond. Atomically resolved STM images reveal that the Te atoms form dimers. It is observed that buckling direction of Te-dimer changes and the dimmers are broken in the site of some dimmer rows. It can be explained that the large lattice mismatch cause the switching of the buckling direction and the breaking of Te-dimer resulted surface relaxation.     

Effect of substrate temperature on few-layer graphene grown on Al2O3 (0 0 0 1) via direct carbon atoms deposition

Few-layer graphene (FLG) was grown on Al₂O₃ (0 0 0 1) substrates at different temperatures via direct carbon atoms deposition by using solid source molecular beam epitaxy (SSMBE) method. The structural properties were characterized by reflection high energy electron diffraction (RHEED), Raman spectroscopy and near-edge X-ray absorption fine-structure (NEXAFS). The results showed that the FLG started to form at the substrate temperature of 700 °C. When the substrate temperature increased to 1300 °C, the quality of the FLG was the best and the layer number was estimated to be less than 5. At higher substrate temperature (1400 °C or above), the crystalline quality of the FLG would be deteriorated. Our experiment results demonstrated that the substrate temperature played an important role on the FLG layer formation on Al₂O₃ (0 0 0 1) substrates and the related growth mechanism was briefly discussed.     

In situ magneto-optical Kerr effect study of uncovered Fe films on ZnSe(0 0 1)

The magnetic properties of uncovered Fe/ZnSe/GaAs(1 0 0) ultrathin films have been determined in situ by magneto-optical Kerr effect (MOKE). Fe films up to 10 monolayers (ML) thick were deposited on c(2×2) Zn-rich ZnSe/GaAs(0 0 1) surfaces at 180 °C. We have studied the thickness dependence of the in-plane lattice parameter of the Fe films and of the MOKE hysteresis loops in the longitudinal geometry, at 150 K, under magnetic fields up to 0.1 T applied along the [1 1 0] and [1-1 0] directions of the ZnSe(0 0 1). Reflection high energy electron diffraction show that in the low thickness regime the Fe films present an in-plane structural anisotropy characterized by an expansion along the [1 1 0] direction. Hysteretic loops were obtained only starting from ∼5 ML Fe. We found the onset of an uniaxial magnetic anisotropy with [1 1 0] magnetic easy axis at 7 ML Fe.     

Giant magnetoresistance in Cu–Co films electrodeposited on n-Si

High quality Cu–Co alloy films with excellent metallic luster have been electrolytically deposited directly onto n-Si (1 0 0) substrate, thereby eliminating the need of a conducting seed layer, which is otherwise required when the films were grown on insulating substrates (Al₂O₃). The as-deposited Cu–Co films exhibit relatively higher magnetoresistance (MR) in comparison with the as-deposited films on Al₂O₃ under identical conditions. The observed increase in MR could be attributed to the reduced substrate current shunting. The MR further improves to 2.67% (at H=10 kOe) with vacuum annealing (at 425°C for 30 min) of the films on Si. This has been ascribed to the separation of Cu and Co phases resulting in a magnetic granular nanostructure. This value of MR of annealed films on Si is, however, lower in comparison with the value obtained for annealed films deposited on Al₂O₃. Glancing angle X-ray diffraction (GAXRD) has revealed the formation of copper silicide in these samples, which is responsible for the lower value of MR. Thus we have observed good MR with a copper silicide host matrix.     

A high (0 0 1)-oriented CoPt/Ag film deposited on glass substrate

The magnetic properties and structures of CoPt_15 nm/Ag_0−100 nm films deposited by DC magnetron sputtering on glass substrates have been studied. The (0 0 1) texturing was improved by introducing an Ag underlayer. As the Ag underlayer thickness was 100 nm, a nearly perfect (0 0 1)-textured CoPt film was obtained.     

Improved electrical parameters of vacuum annealed Ni/4H-SiC (0 0 0 1) Schottky barrier diode

The reported work has been focused on the improvement of electrical parameters of Schottky diode using vacuum annealing at mild temperature in Ar gas ambient. Nickel Schottky barrier diodes were fabricated on 50 μm epitaxial layer of n-type 4H-SiC (0 0 0 1) substrate. The values of leakage current, Schottky barrier height (?_B), ideality factor (η) and density of interface states (N_SS) were obtained from experimentally measured current–voltage (I–V) and capacitance–voltage (C–V) characteristics before and after vacuum annealing treatment. The data revealed that ?_B, η and reverse leakage current for the as-processed diodes are 1.25 eV, 1.6 and 1.2 nA (at ?100 V), respectively, while for vacuum annealed diodes these parameters are 1.36 eV, 1.3 and 900 pA (at same reverse voltage). Improved characteristics have been resulted under the influence of vacuum annealing because of lesser number of minority carrier generation due to incessant reduction of number of available discrete energy levels in the bandgap of 4H-SiC substrate and lesser number of interface states density at Ni/4H-SiC (0 0 0 1) interface.     

Use of film thickness and Cu additive to improve (0 0 1) texture in MgO/FePtCu(C) bilayers

A multilayer structure has been proposed that demonstrates improved (0 0 1) texture for FePt-based L1₀ perpendicular media. Achieving a strong perpendicular magnetic anisotropy requires aligning the L1₀ crystallographic c-axis along the film normal. The ordered L1₀ FePt structure is tetragonal with a c/a ratio close to 0.965. This makes discriminating between the three crystallographic variants ([1 0 0], [0 1 0], and the desired [0 0 1]) difficult. Alloying FePt with Cu to reduce the c/a ratio and using a multilayer approach to keep the magnetic layers thin results in a structure with an adjustable M_rt and a strong (0 0 1) texture (rocking curve widths around 2°). This is a remarkable improvement in texture from pure FePt multilayered films or monolithic FePt(X) films. The proposed [MgO(2 nm)/Fe_50−xPt₅₀Cu_x(5 nm)]_×n structure limits grain size in the vertical (perpendicular) direction albeit not in the plane of the film. Carbon can be added to the FePtCu layer to reduce the grain size with minimal degradation of the (0 0 1) orientation.     

Characterization of TiN thin films grown by low-frequency (60 Hz) plasma enhanced chemical vapor deposition

The characteristics of TiN thin films grown on glass substrates by very low frequency (60 Hz) PECVD were investigated along with the reactive plasma generated using a 60 Hz power source. The TiN film depositions were performed using a gaseous mixture of H₂, N₂ and TiCl₄ onto a substrate positioned between two electrodes using a floating substrate holder with a heating unit. The substrate is electrically floated to avoid sample damages due to ion bombardment. As-grown TiN films showed a NaCl-type fcc structure with a (200) crystallographic plane, low resistivity (～60 μΩ cm) and gold-like color. Crystallinity was improved, impurities such as O and Cl were reduced, and the atomic ratio of N/Ti became stoichiometric with the increase of substrate temperature. Particularly, no chlorine component was detected above 500 °C. Also, the N₂ partial pressure strongly affected the deposition rate and ratio of N/Ti. Otherwise, impurities and crystallinity barely changed with the change of N₂ pressure. The atomic ratio of N/Ti, impurities, and crystallinity of the films significantly affected the optical and electrical properties. Consequently, we produced stoichiometric Cl-free TiN films with golden color above 500 °C at 60 mTorr. The effects of temperature played an important role in controlling the film properties compared to the N₂ partial pressure.     

Nonlinear magnetoelastic effects in ultrathin epitaxial FCC Co(0 0 1) films:: an ab initio study

Those linear and nonlinear magnetoelastic coupling coefficients which determine the magnetostrictive stress and the strain-induced out-of-plane magnetic anisotropy in epitaxially grown FCC Co(0 0 1) films are calculated by the ab initio density functional electron theory. The nonlinear couplings have a strong effect on the change Δσ₁^m of the in-plane magnetostrictive stress resulting from a change of the magnetization direction from [0 1 0] to [1 0 0], but a negligibly small effect on the out-of-plane anisotropy e_MCA. The calculations confirm the experimental result that the measured out-of-plane anisotropy cannot be totally attributed to volume magnetoelastic effects. Estimates are given for the nonlinear magnetoelastic coupling coefficients m₁^γ,2 and m₂^γ,2.     

Comparative PEEM and AES study of surface morphology and composition of Cu films on Si and 3C–SiC substrates

We have conducted photoemission electron microscope (PEEM) and Auger electron spectroscopy (AES) studies on the Cu(30 nm)/3C–SiC(1 0 0) and Cu(30 nm)/Si(1 0 0) samples annealed successively up to 850 °C. With PEEM, lateral diffusion of Cu atoms on the 3C–SiC substrate was observed at 400 °C while no lateral diffusion was seen for the Cu/Si(1 0 0) samples up to 850 °C. The 30 nm Cu thin film on 3C–SiC began to agglomerate at 550 °C, similar to the case for the Cu/Si(1 0 0) system. No further spread of the lateral diffusion region was found in subsequent annealing up to 850 °C for Cu/3C–SiC while separated regular-sized dot structures were found at 850 °C for Cu/Si(1 0 0). AES studies of Cu/Si(1 0 0) system showed partial interface reaction during Cu deposition onto the Si(1 0 0) substrate and oxidation of the resultant Cu₃Si to form SiO₂ on the specimen surface at room temperature in air. Surface segregation of Si and C was observed after annealing at 300 °C for Cu/Si(1 0 0) and at 850 °C for the Cu/3C–SiC system. We have successfully elucidated the observed phenomena by combining PEEM and AES considering diffusion of the constituent elements and/or reaction at interfaces.     

Influence of growth temperature and deposition duration on the structure,surface morphology and optical properties of InN/YSZ (1 0 0)

InN films with the wurtzite structure have been grown directly on YSZ (1 0 0) substrate by the RF-magnetron sputtering technique. Strongly (0 0 2) oriented films with smooth surfaces (0.7–2.9 nm surface roughness depending on substrate temperature), were grown within 30 min. Films deposited for 60 min developed three-dimensional (3D) pyramidal islands on top of their surfaces, which diminished the residual elastic strain. The optical absorption edge and PL peak energy around 1.7 eV were found to redshift with increasing film thickness and substrate temperature.     

Oxygen assisted deposition of Sr2FeMoO6 thin films on SrTiO3(1 0 0)

Epitaxial thin films of Sr₂FeMoO₆ (SFMO) were prepared by pulsed laser deposition on SrTiO₃(1 0 0) substrate. Thin films have been grown under different gas environments and they were structurally characterised by XRD. In contrast to previous reports, deposition carried out in the presence of a small amount of O₂ with Ar yields high-quality SFMO films with a saturation magnetic moment of 3.8 μ_B. These SFMO films were strained in such a way that they were elongated along the c-axis and compressed in the ab-axes directions. The large low-field magnetoresistance seen in these films has been attributed to the tunneling across the antisite boundaries.     

Near-surface stresses in silicon(0 0 1)

We report here on a detailed atomistic stress analysis of the near-surface stresses on the 2 × 1 surface reconstruction on Si(0 0 1). We find that the surface stresses are spatially periodic with fairly large amplitude. We additionally investigate the stresses in the neighborhood of an S_A-type step.     

Coverage effects on the adsorption of sulfur on Co(0 0 0 1): A DFT study

The adsorption of sulfur on Co(0 0 0 1) was studied using density functional theory calculations at coverage from 0.11 ML to 1.0 ML. Calculated results indicate that atomic S favors in hollow sites with bond S–Co dominated at lower coverage and at higher coverage the strong adsorbate S–S interaction leads to the formation of S₂ species. It was shown that the adsorption energy generally increases (gets weaker) with the coverage in a near linear fashion for the most stable configurations. In addition, modification of the surface electronic properties has been discussed and some discrepancy are found between our calculations and the findings of O adsorption on Au(1 1 1) and Pt(1 1 1) surfaces.     

Optical properties of Cr/Fe(t)/MgO (0 0 1) thin films

In this work we report on the optical properties of single-crystalline iron thin films. For this, Cr-capped Fe films with thickness, t, in the range 30–300 Å were prepared on MgO (0 0 1) by DC magnetron sputtering, and then studied by optical absorption technique within the range from 1.0 to 3.6 eV. All measurements were carried out at room temperature using a fiber optics spectrophotometer. The intensity of the transmitted light decreases with increasing film thickness. The optical constants of the films are deduced from a model that considers the transmission of light by two absorbing films on an absorbing substrate. The absorption coefficient of the Fe films is also calculated from the transmission data. The absorption spectra show the following characteristics: (i) two large absorption peaks centered at about 1.20 and 2.65 eV; and (ii) a sharp step near 1.40 eV. These structures are associated with conventional interband transitions of the iron film.