Recently, the coexistence of a parity‐time (PT) symmetric laser and absorber has gained tremendous research attention. While PT‐symmetric lasers have been observed in microring resonators, the experimental demonstration of a PT‐symmetric stripe laser is still absent. Here, we experimentally study a PT‐symmetric laser absorber in a stripe waveguide. Using the concept of PT‐symmetry to exploit the light amplification and absorption, PT‐symmetric laser absorbers have been successfully obtained. In contrast to the single‐mode PT‐symmetric lasers, the PT‐symmetric stripe lasers have been experimentally confirmed by comparing the relative wavelength positions and mode spacing under different pumping conditions. When the waveguide is half‐pumped, the mode spacing is doubled and the lasing wavelengths shift to the center of every two initial lasing modes. All these observations are consistent with the theoretical predictions and well confirm the PT‐symmetry breaking.
We report complete spatial shaping (both phase and amplitude) of the second‐harmonic beam generated in a nonlinear photonic crystal. Using a collinear second‐order process in a nonlinear computer generated hologram imprinted on the crystal, the desired beam is generated on‐axis and in the near field. This enables compact and efficient one‐dimensional beam shaping in comparison to previously demonstrated off‐axis Fourier holograms. We experimentally demonstrate the second‐harmonic generation of high‐order Hermite–Gauss, top hats and arbitrary skyline‐shaped beams.
We demonstrate a scheme incorporating dual‐coupled microresonators through which mode interactions are intentionally introduced and controlled for Kerr frequency comb (microcomb) generation in the normal‐dispersion region. Microcomb generation, repetition rate selection, and mode locking are achieved with coupled silicon nitride microrings controlled via an on‐chip microheater. The proposed scheme shows for the first time a reliable design strategy for normal‐dispersion microcombs and may make it possible to generate microcombs in an extended wavelength range (e.g. in the visible) where normal material dispersion is likely to dominate.
Open‐access microcavities are emerging as a new approach to confine and engineer light at mode volumes down to the λ3 regime. They offer direct access to a highly confined electromagnetic field while maintaining tunability of the system and flexibility for coupling to a range of matter systems. This article presents a study of coupled cavities, for which the substrates are produced using Focused Ion Beam milling. Based on experimental and theoretical investigation the engineering of the coupling between two microcavities with radius of curvature of 6 m is demonstrated. Details are provided by studying the evolution of spectral, spatial and polarisation properties through the transition from isolated to coupled cavities. Normal mode splittings up to 20 meV are observed for total mode volumes around . This work is of importance for future development of lab‐on‐a‐chip sensors and photonic open‐access devices ranging from polariton systems to quantum simulators.
Leaky modes are below‐cutoff waveguide modes that lose part of their energy to the continuum of radiation modes during propagation. In photonic nanowire lasers, leaky modes have to compete with almost lossless above‐cutoff modes and are therefore usually prevented from crossing the lasing threshold. The situation is drastically different in plasmonic nanowire systems where the above‐cutoff plasmonic modes are very lossy because of their strong confinement to the metal surface. Due to gain guiding, the threshold gain of the hybrid electric leaky mode does not increase strongly with reduced wire diameter and stays below that of all other modes, making it possible to observe leaky‐mode lasing. Plasmonic ZnO nanowire lasers operating in the gain‐guided regime could be used as coherent sources of surface plasmon polaritons at the nanoscale or as surface plasmon emitting diodes with an emission angle that depends on the nanowire diameter and the color of the surface plasmon polariton.
This article presents a novel III‐V on silicon laser. This work exploits the phenomenon that a passive silicon cavity, side‐coupled to a III‐V waveguide, will provide high and narrow‐band reflectivity into the III‐V waveguide: the resonant mirror. This results in an electrically pumped laser with a threshold current of 4 mA and a side‐mode suppression ratio up to 48 dB.
We experimentally demonstrate an optically‐pumped III‐V/Si vertical‐cavity laser with lateral emission into a silicon waveguide. This on‐chip hybrid laser comprises a distributed Bragg reflector, a III‐V active layer, and a high‐contrast grating reflector, which simultaneously funnels light into the waveguide integrated with the laser. This laser has the advantages of long‐wavelength vertical‐cavity surface‐emitting lasers, such as low threshold and high side‐mode suppression ratio, while allowing integration with silicon photonic circuits, and is fabricated using CMOS compatible processes. It has the potential for ultrahigh‐speed operation beyond 100 Gbit/s and features a novel mechanism for transverse mode control.
Use of resonant light forces opens up a unique approach to high‐volume sorting of microspherical resonators with much higher uniformity of resonances compared to that in coupled‐cavity structures obtained by the best semiconductor technologies. In this work, the spectral response of the propulsion forces exerted on polystyrene microspheres near tapered microfibers is directly observed. The measurements are based on the control of the detuning between the tunable laser and internal resonances in each sphere with accuracy higher than the width of the resonances. The measured spectral shape of the propulsion forces correlates well with the whispering‐gallery mode resonances in the microspheres. The existence of a stable radial trap for the microspheres propelled along the taper is demonstrated. The giant force peaks observed for 20‐μm spheres are found to be in a good agreement with a model calculation demonstrating an efficient use of the light momentum for propelling the microspheres.
All‐optical signal processing on nonlinear photonic chips is a burgeoning field. These processes include light generation, optical regeneration and pulse metrology. Nonlinear photonic chips offer the benefits of small footprints, significantly larger nonlinear parameters and flexibility in generating dispersion. The nonlinear compression of optical pulses relies on a delicate balance of a material's nonlinearity and optical dispersion. Recent developments in dispersion engineering on a chip are proving to be key enablers of high‐efficiency integrated optical pulse compression. We review the recent advances made in optical pulse compression based on nonlinear photonic chips, as well as the future outlook and challenges that remain to be solved.
A compact 64‐channel hybrid demultiplexer based on silicon‐on‐insulator nanowires is proposed and demonstrated experimentally to enable wavelength‐division‐multiplexing and mode‐division‐multiplexing simultaneously in order to realize an ultra‐large capacity on‐chip optical‐interconnect link. The present hybrid demultiplexer consists of a 4‐channel mode multiplexer constructed with cascaded asymmetrical directional‐couplers and two bi‐directional 17 × 17 arrayed‐waveguide gratings (AWGs) with 16 channels. Here each bi‐directional AWG is equivalent as two identical 1 × 16 AWGs. The measured excess loss and the crosstalk for the monolithically integrated 64‐channel hybrid demultiplexer are about ‐5 dB and ‐14 dB, respectively. Better performance can be achieved by minimizing the imperfections (particularly in AWGs) during the fabrication processes.
The progress on multi‐wavelength quantum cascade laser arrays in the mid‐infrared is reviewed, which are a powerful, robust and versatile source for next‐generation spectroscopy and stand‐off detection systems. Various approaches for the array elements are discussed, from conventional distributed‐feedback lasers over master‐oscillator power‐amplifier devices to tapered oscillators, and the performances of the different array types are compared. The challenges associated with reliably achieving single‐mode operation at deterministic wavelengths for each laser element in combination with a uniform distribution of high output power across the array are discussed. An overview of the range of applications benefiting from the quantum cascade laser approach is given. The distinct and crucial advantages of arrays over external cavity quantum cascade lasers as tunable single‐mode sources in the mid‐infrared are discussed. Spectroscopy and hyperspectral imaging demonstrations by quantum cascade laser arrays are reviewed.
Red‐light photodetectors without filters are in urgent need for narrowband applications such as full‐color imaging and multi‐output visible light communication (VLC). However, their development is hindered by the lack of small‐band‐gap and narrowband response materials. Without wavelength filters, a new type of photodetector with a simple single‐layer architecture is developed, based on a stable small‐band‐gap squarylium dye and characterized by a detectivity peak at 680 nm and full width at half maximum of 80 nm. The device, which exhibits high stability in air and humid conditions, shows a significantly low dark current of ∼2 nA·cm−2 at −2 V and high specific detectivity of 3.2 × 1012 Jones. The response current ratio of the device to red, green, and blue lights with a luminous flux amplitude ratio of 3:6:1 (standard ratio for white light) is 100:12:1.1. These properties indicate that the squarylium dye red‐light photodetectors are promising for VLC and other narrowband optoelectronic applications.
A novel scheme to multiply the repetition rate of a monolithic self‐mode‐locked laser for generating sub‐terahertz pulse sources is successfully demonstrated. A coated Yb:KGW crystal is designed to achieve a self‐mode‐locked operation at a repetition rate of 24 GHz with an average output power exceeding 1.0 W at a pump power of 4.8 W. A partially reflective mirror is utilized to combine with the output surface of the gain medium to constitute an external Fabry‐Perot cavity. It is theoretically and experimentally verified that adjusting the external cavity length to satisfy the commensurate condition can lead to the frequency spacing to be various order harmonics of the mode spacing of the monolithic cavity. The maximum pulse repetition rate of the laser output can be up to 216 GHz and the pulse duration is as short as 330 fs. More importantly, the overall characteristics of the first‐order temporal autocorrelation traces obtained by sequentially scanning the external cavity.length display an intriguing phenomenon of temporally fractional revivals, similar to the feature of spatial Talbot revivals.
Since the surface plasmon polariton (SPP) has received a great deal of attention because of its capability of guiding light within the subwavelength scale, finding methods for arbitrary SPP field generation has been a significant issue in the area of integrated optics. To achieve such a goal, it will be necessary to generate a plasmonic complex field. In this paper, we propose a novel method for generating a plasmonic complex field propagating with arbitrary curvatures by using double‐lined distributed nanoslits. As a unit cell, two facing nanoslits are used for tuning both the amplitude and the phase of excited SPPs as a function of their tilted angles. For verification of the proposed design rule, the authors experimentally demonstrate some plasmonic caustic curves and Airy plasmons.
We demonstrate a high optoelectronic performance and application potential of our random network, with subwavelength diameter, ultralong, and high‐quality silver nanowires, stabilized on a substrate with a UV binder. Our networks show very good optoelectronic properties, with the single best figure of merit of ∼1686, and excellent stability under harsh mechanical strain, as well as thermal, and chemical challenge. Our network transparency strongly exceeds the simple shading limit. We show that this transmission enhancement is due to plasmonic refraction, which in an effective medium picture involves localized plasmons, and identify the inhomogeneous broadening as the key factor in promoting this mechanism. Such networks could become a basis for a next generation of ultrahigh‐performance transparent conductors.
A diode‐pumped Yb:YAG MOPA‐System for the unprecedented generation of transform limited pulses with variable pulse duration in the range between 10 ps and 100 ps is presented. First applications relying on unique pulse parameters as modulation free spectrum, tunability and coherence length, namely the direct laser interference patterning (DLIP) and laser cooling of stored relativistic ion beams are highlighted. Pulses are generated by a mode‐locked fs‐oscillator while the spectral bandwidth is narrowed in the subsequent regenerative amplifier by an intra‐cavity grating monochromator. Two alternative booster amplifiers were added to increase the pulse energy to 100 μJ and 10 mJ, respectively.
The terahertz (THz) radiation from InGaN/GaN dot‐in‐a‐wire nanostructures has been investigated. A submicrowatt THz signal is generated with just ten vertically stacked InGaN quantum dots (QDs) in each GaN nanowire. Based on the experimental results and analysis, a single quantum wire is expected to generate an output power as high as 10 pW, corresponding to 1 pW per dot. These structures are among the most efficient three‐dimensional quantum‐confined nanostructures for the THz emission. By applying a reverse bias along the wires in a light‐emitting device (LED) consisting of such nanostructures, the THz output power is increased more than fourfold. Based on THz and photoluminescence (PL) experiments, the mechanism for the THz emission is attributed to dipole radiation induced by internal electric fields and enhanced by external fields.
Nanophotonic beamsplitters are fundamental building blocks in integrated optics, with applications ranging from high speed telecom receivers to biological sensors and quantum splitters. While high‐performance multiport beamsplitters have been demonstrated in several material platforms using multimode interference couplers, their operation bandwidth remains fundamentally limited. Here, we leverage the inherent anisotropy and dispersion of a sub‐wavelength structured photonic metamaterial to demonstrate ultra‐broadband integrated beamsplitting. Our device, which is three times more compact than its conventional counterpart, can achieve high‐performance operation over an unprecedented 500 nm design bandwidth exceeding all optical communication bands combined, and making it one of the most broadband silicon photonics components reported to date. Our demonstration paves the way toward nanophotonic waveguide components with ultra‐broadband operation for next generation integrated photonic systems.
III‐nitride light‐emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequences are high thresholds and limited efficiencies. Here, we present arguments for III‐nitride quantum dots (QDs) as active regions for both LEDs and LDs, to circumvent Auger recombination and achieve efficiencies at higher current densities that are not possible with quantum wells. QD‐based LDs achieve gain and thresholds at lower carrier densities before Auger recombination becomes appreciable. QD‐based LEDs achieve higher efficiencies at higher currents because of higher spontaneous emission rates and reduced Auger recombination. The technical challenge is to control the size distribution and volume of the QDs to realize these benefits. If constructed properly, III‐nitride light‐emitting devices with QD active regions have the potential to outperform quantum well light‐emitting devices, and enable an era of ultra‐efficient solid‐state lighting.
In this paper, the green quantum dots capped with the ligand, tris(mercaptomethyl)nonane (TMMN), are fabricated as the light‐emitting layer for efficient and bright light‐emitting diodes. These TMMN‐capped quantum dots exhibit well‐preserved photoluminescence properties with quantum yields of ∼90% after ligand exchange. The light‐emitting diodes based on TMMN‐capped quantum dots are reported with a maximum external quantum efficiency of 16.5% corresponding to a power efficiency and current efficiency of 57.6 lm W–1 and 70.1 cd A–1, respectively. The devices exhibit high color stability that is not markedly affected by the increase of applied voltage, thus leading to a high color reproducibility. Most importantly, the devices exhibit high environmental stability. For the highest luminance devices (with emitting layer thickness of 25 nm) and the highest power efficiency devices (with emitting layer thickness of 38 nm), the lifetimes are > 480 000 h and > 110 000 h, respectively.
